JP2002141370A - Semiconductor device, method and apparatus for manufacturing the same as well as method for mounting semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a low load mounting and to surely connect electrodes even when a base plate has a warpage waviness without giving a damage to an element or wirings. SOLUTION: A semiconductor device comprises a terminal electrode 11, a salient electrode 12 provided on the electrode 11 and having a height to be collapsed at a mounting time, and a conductive adhesive 13 provided at a distal end of the electrode 12. Since the adhesive 13 is used for a junction layer, the low load mounting can be performed without necessity of a mounting load until the electrode of the base plate is deformed. Thus, faults such as a deterioration of characteristics of the element, a disconnection of the wiring or the like can be prevented. Since the electrode 12 has the height to be collapsed at the mounting time, the device can flexibly deal with a warpage waviness of the base plate, and connections of the electrodes can be surely conducted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a method of manufacturing the same, a manufacturing apparatus thereof, and a method of mounting a semiconductor device.

[0002]

2. Description of the Related Art With the miniaturization and high performance of portable electronic equipment, miniaturization and high performance of semiconductor devices and the like are increasingly required. Therefore, the number of terminal pins increases, and it is important to reduce the pitch or to arrange the areas. However, there is a limit to narrowing the pitch, and while it is necessary to further narrow the pitch, it is important to provide a pad on an element or a wiring and mount it. As a technology that can do this, by using solder bumps developed by IBM,
There is a mounting technique commonly called C4 (Controlled Collapse Chip Connection). FIG. 16 is a schematic sectional view of the solder bump. In FIG. 16, 31 is Pb-Sn solder, 32 is Cu-Sn intermetallic compound, 33 is Cr-C
u, 34 are Cr, 35 is Al, 36 is a glass protective film, 3
7 is an SiO ₂ film, and 38 is an IC substrate.

According to the document "Electronic Packaging Technology August Issue (1996), P78-P83", an aluminum oxide film is formed on the surface of aluminum, which is a material for pad electrodes of an IC chip. After performing the oxide film removal process, a metal film called a barrier metal is formed by vacuum evaporation, and then a solder bump is formed. If this is brought into contact with the input / output terminal electrodes of the circuit board and reflowed, the solder melts and the connection is completed.

In addition, there is a structure in which a barrier metal is formed in addition to solder, and then an Au plating bump is formed.

In these prior arts, even if a terminal electrode (pad) is formed on an active element of an IC chip and a protruding electrode is formed thereon, it can be expected that there is no damage to the active element of the IC chip. However, since all of these techniques are subjected to plating or treatments associated therewith, there are always problems of high cost or environmental problems related to plating equipment, waste liquid treatment, cleaning treatment, and the like. For this reason, it is difficult to commercialize with consumer equipment. Also, when mounting in an area arrangement, the diameter of the solder bump must be large,
Considering the necessity of miniaturization of a process such as a substrate and the reliability as a package, the mounting limit is about 250 μm pitch at present.

On the other hand, there is a flip chip mounting method in which a semiconductor device having a protruding electrode is mounted on an input / output terminal electrode of a circuit board via a bonding layer. At this time, as the protruding electrode, an electrode made of, for example, Au, Ni or the like generated by electrolytic plating or electroless plating is used. The bonding layer includes a solder, a conductive adhesive (isotropic), an anisotropic conductive film (ACF), an anisotropic conductive paste, and the like. When a solder paste or a conductive adhesive (isotropic) is used, almost no load is required during mounting, but the anisotropic conductive film (A
In the case of using CF) or anisotropic conductive paste, a maximum of 200 g / sec.
In some cases, a load equivalent to a pin may be required.

FIG. 17 shows a mounting method when an anisotropic conductive film (ACF) is used. First electrode 42 of first substrate 41
Is applied to the second electrode 45 of the second substrate 46 by using an anisotropic conductive film (AC
F) implemented via 40; Anisotropic conductive film (AC
F) The conductive particles 43 contained in 40 are, for example, N
i-particles, resin balls coated with Au (or Ni-Au), or the like can be used. For example, an epoxy resin is used for the adhesive 44. By applying heat and load at the same time, the connection is established such that the conductive particles 43 are sandwiched between the first electrode 42 and the second electrode 45. Alternatively, when the bump electrode made of Au is joined to the input / output terminal electrode of Au on the surface of the circuit board by Au-Au, the mounting load and the ultrasonic wave are used together.

[0008]

As described above, while the package form of mounting has been increasingly pursued to be smaller and thinner, the number of terminal pins will continue to increase in the future. Is required. Therefore, a narrower pitch connection is required, and it is more difficult to establish a technology for realizing the connection. Therefore, development to mounting on an element such as an area array arrangement, which is conventionally established only by soldering, is expected, and development of a new element technology is desired. In addition, it is necessary to increase productivity in the mounting process more than ever in order to reduce costs,
In order to improve the tact time, thermocompression bonding represented by ACF and the like has attracted attention. In the United States, the reflow method of solder resin pre-coating is expected to be the mainstream, and studies have begun.

However, thermocompression bonding of an anisotropic conductive film (ACF) or the like has hitherto been successful in the field of liquid crystal, but generally cannot be said to be widespread. It is AC
Conductive particles contained in F and silica filler mixed to control the coefficient of thermal expansion exert stress on the element surface during mounting, causing damage to the element and disconnection of the Al wiring. Is generated. In addition, since the resin is cured while the protruding electrode is in direct contact with the input / output terminal electrode of the circuit board via the conductive filler, the element characteristics are degraded since there is no element for relaxing the stress. Also, when mounting on an input / output terminal electrode of a resin substrate, there is a case where the input / output terminal electrode is deformed at the time of mounting and a failure occurs that a via in the substrate is torn.

FIG. 18 shows the result of mounting using a conventional anisotropic conductive film (ACF) as shown in FIG. The bump electrode of the semiconductor device is an Au bump formed by using a wire bonding method, the substrate is a ceramic substrate and a glass epoxy substrate (FR4), and the ACF is 5
A 70 μm-thick one containing a μmφ Ni filler was used. FIG. 18A shows the initial connection resistance per pin after mounting. This includes terminal electrodes of semiconductor devices,
Au bumps and ACF resistors are included. In the case of ceramic, an initial connection could not be obtained unless the mounting load was 80 g / bump. 80g / b on glass epoxy board
It was found that the resistance value was not stabilized unless a load of ump was applied. FIG. 18B shows the change in the resistance value of each sample with respect to the temperature. It was found that the glass epoxy board (FR4) having a mounting load of 40 and 80 g / bump was stable. However, according to the result of the thermal shock test (liquid phase −55 to 125 ° C.) shown in FIG. 18C, there is a difference between the mounting loads 40 g / bump and 80 g / bump. Further, FIG. 19 is a photograph in which a cross-sectional structure under each mounting load was examined. The deformation of the input / output terminal electrodes of the glass epoxy substrate (FR4) was 15 g / mount.
It can be seen that this is caused by about a bump. Since the ceramic substrate has rigidity, the mounting load is 80 g / b.
Although no deformation of the input / output terminal electrode occurs even in the case of “ump”, the initial connection is unstable, and a connection failure is caused in the temperature characteristic of FIG. 18B.

Therefore, it is conceivable to use solder or a conductive adhesive which can be mounted with a lower load than the anisotropic conductive film (ACF) for the bonding layer and mount the electrodes while preventing deformation of the electrodes. However, in the conventional mounting method, the tips of the protruding electrodes are flattened in advance with the same height, and are connected to the input / output terminal electrodes via the bonding layer. There has been a problem that a gap is formed between the terminals and the joining cannot be performed well.

The present invention provides a semiconductor device which can be mounted with a low load, does not damage elements and wirings, and can reliably connect electrodes even if the substrate warps and undulates, and a method and apparatus for manufacturing the same. An object of the present invention is to provide a method for mounting a device.

[0013]

According to the present invention, there is provided a semiconductor device comprising:
It comprises a terminal electrode, a protruding electrode provided on the terminal electrode and having a height to be crushed during mounting, and a conductive adhesive provided on a tip of the protruding electrode.

According to the present invention, mounting can be performed with a low load without requiring a mounting load until the electrodes of the substrate are deformed, and the electrodes and the wiring are not damaged, and even if the substrate is warped and undulated, the electrodes can be mounted. As a result, a semiconductor device in which connections can be reliably performed is obtained.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to a first aspect of the present invention is directed to a terminal electrode, a protruding electrode provided on the terminal electrode and having a height which can be crushed at the time of mounting, and a conductive electrode provided at the tip of the protruding electrode. It is a semiconductor device equipped with an adhesive.Since a conductive adhesive is used for the bonding layer, mounting load is not required until the electrodes of the substrate are deformed, and low-load mounting is possible, without damaging elements and wiring. In addition, since the protruding electrode has a height that can be crushed during mounting, it can cope with the warpage of the substrate,
This has the effect that the connection between the electrodes can be reliably performed.

According to a second aspect of the present invention, in the semiconductor device of the first aspect, an elastic body is provided in at least a part of a region where the element exists, and a conductive adhesive is applied to the bonding layer. Since it is used, mounting with low mounting load is not required until the electrodes of the substrate are deformed, and low-load mounting is possible, and since an elastic body is provided in at least a part of the region where the element exists, it does not damage the element or wiring, In addition, since the protruding electrode has a height at which the protruding electrode is crushed at the time of mounting, it is possible to cope with the warp and undulation of the substrate, and it is possible to reliably connect the electrodes. Note that an elastic resin or rubber such as silicone resin is used for the elastic body.

According to a fourth aspect of the present invention, a conductive adhesive film is prepared, and a protruding electrode having a height to be crushed when mounted on a terminal electrode of a semiconductor device is formed. A method of manufacturing a semiconductor device in which a conductive adhesive is transferred to a tip of a protruding electrode by immersing the tip of the protruding electrode in a coating film of an agent. It can be mounted with low load without requiring mounting load, does not damage elements and wiring, and has a height that the protruding electrode collapses at the time of mounting, so it can cope with the warpage of the board and connect the electrodes Has the effect of being able to perform the operation reliably.

According to a fifth aspect of the present invention, there is provided a semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode. This is a method of mounting on a circuit board provided with a resin film so as to cover at least the input / output terminal electrode on the input / output terminal electrode. This is a method of mounting a semiconductor device characterized by connecting to the input / output terminal electrodes.Since a conductive adhesive is used for the bonding layer, mounting load is not required until the electrodes on the substrate are deformed, enabling low-load mounting. In addition, it does not damage the elements and wiring, and the protruding electrode has a height that can be crushed during mounting, so it can cope with the warping and undulation of the substrate, the electrodes can be securely connected, and the resin film reinforces the connection part By doing Sex has effects of improving.

According to a sixth aspect of the present invention, there is provided a semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode. A method in which a resin film is provided on the input / output terminal electrodes so as to cover at least the input / output terminal electrodes, and the resin film is mounted on a circuit board having holes formed by exposing the input / output terminal electrodes at least at the connection portions of the protruding electrodes. Then, by using both heat and load, the protruding electrode is connected to the input / output terminal electrode,
A semiconductor device mounting method characterized by reinforcing the periphery of the connection portion with a molten resin film, and does not require a mounting load until the electrode of the substrate is deformed because a conductive adhesive is used for the bonding layer. It can be mounted with low load, does not damage elements and wiring, and has a height that the protruding electrode collapses at the time of mounting, so it can respond to warpage and undulation of the board, making it possible to securely connect electrodes and There is an operational effect that reliability is improved by the film reinforcing the connection portion.

According to a seventh aspect of the present invention, there is provided a semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode. A method of mounting on a circuit board having an input / output terminal electrode and a sealing resin supplied to at least a part of a mounting area, and connecting a projecting electrode to the input / output terminal electrode by using both heat and a load. A method for mounting a semiconductor device characterized by reinforcing the periphery of a connection portion with a sealing resin, and does not require a mounting load until an electrode of a substrate is deformed because a conductive adhesive is used for a bonding layer. Low-load mounting is possible, without damaging the elements and wiring, and since the protruding electrode has a height that can be crushed during mounting, it can cope with warpage and undulation of the substrate, making it possible to securely connect the electrodes and seal. Stop resin supplements the connection It has the effect that reliability is improved by.

According to an eighth aspect of the present invention, there is provided a holding jig comprising: preparing a coating film of a conductive adhesive; forming a projecting electrode having a height which can be crushed when mounted on a terminal electrode of a semiconductor device; The conductive adhesive is transferred to the tip of the protruding electrode by immersing the tip of the protruding electrode in the conductive adhesive coating film, and the semiconductor device is transferred from the holding jig to the transfer jig. This is a method of manufacturing a semiconductor device in which a semiconductor device is transferred by suction from a transfer jig to a heating jig, and the conductive adhesive is heated and cured or a solvent is dispersed. Since it is used, mounting load is not required until the electrode of the board is deformed, low load mounting is possible, it does not damage elements and wiring, and the projection electrode has a height that can be crushed at the time of mounting, so the board warpage We can cope with swell Connection of the electrodes to each other has a effect that reliably performed.

According to a ninth aspect of the present invention, a semiconductor device is held by suction, and the tip of a protruding electrode having a height that is crushed when the semiconductor device is mounted is immersed in a conductive adhesive film by conductive bonding. A holding jig for transferring the agent to the tip of the protruding electrode,
A semiconductor device comprising: a transfer jig for receiving and holding a semiconductor device from a holding jig; and a heating jig for receiving and holding the semiconductor device from the transfer jig and heating the conductive adhesive to cure or disperse the solvent. Since it uses a conductive adhesive for the bonding layer, it does not require a mounting load until the electrodes on the substrate are deformed, enables low-load mounting, does not damage the elements and wiring, and has a protruding electrode. Since it has a crushing height at the time of mounting, it can cope with the warp and undulation of the substrate, and has an operation and effect that the connection between the electrodes can be surely performed.

According to a tenth aspect of the present invention, there is provided a semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode. A method of mounting on a circuit board having an input / output terminal electrode and a temporary fixing resin supplied to at least a part of a mounting area, wherein a load is applied to connect a projecting electrode to the input / output terminal electrode, and a conductive adhesive A method of mounting a semiconductor device in which a curing agent is cured, a sealing resin is sealed in a gap between the semiconductor device and a circuit board, and the sealing resin is cured from the semiconductor device side by using heat or a combination of heat and load. The use of conductive adhesive does not require a mounting load until the electrodes on the board are deformed, enabling low-load mounting, without damaging the elements and wiring, and having a height at which the protruding electrodes collapse during mounting. Because the substrate Can cope with a warp undulation has the effect that connection of the electrodes to each other can be performed reliably.

According to an eleventh aspect of the present invention, there is provided a semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode. A method of mounting on a circuit board having an input / output terminal electrode and a temporary fixing resin supplied to at least a part of a mounting area, wherein a load is applied to connect a projecting electrode to the input / output terminal electrode, and a conductive adhesive This is a method of mounting a semiconductor device in which the agent is cured, the sealing resin is sealed in the gap between the semiconductor device and the circuit board, and the sealing resin is cured by applying a load from the semiconductor device and applying heat from the stage. The use of conductive adhesive does not require a mounting load until the electrodes on the board are deformed, enabling low-load mounting, without damaging the elements and wiring, and having a height at which the protruding electrodes collapse during mounting. Because there is Warping can support undulation has the effect that connection of the electrodes to each other can be performed reliably.

According to a twelfth aspect of the present invention, a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, a conductive adhesive is provided at a tip of the protruding electrode, and at least a mounting area is provided. A method of mounting a semiconductor device having a temporarily-supplied resin partially supplied to a circuit board having input / output terminal electrodes, by applying a load to connect the protruding electrodes to the input / output terminal electrodes, Curing the adhesive, encapsulating the sealing resin in the gap between the semiconductor device and the circuit board, and applying a load from the semiconductor device to the sealing resin by applying heat from the stage to cure the sealing resin. Yes, since a conductive adhesive is used for the bonding layer, mounting load is not required until the electrodes on the board are deformed, and low-load mounting is possible. To Since it has to have an effect that can accommodate warping waviness of the substrate, connecting electrodes to each other can be performed reliably.

The protruding electrode may have a pointed tip.

The conductive filler of the conductive adhesive is:
It contains at least one of Ag, Pd, Ni, Au, Cu, C, Pt, and Fe.

The resin film contains an epoxy resin as a main component, and contains inorganic particles. Alternatively, it contains an epoxy-based resin as a main component and at least one of Ag, Pd, Ni, Au, Cu, C, Pt, and Fe as a conductive filler.

The protruding electrodes are made of Au, Sn, Ag, P
b, Bi, Cu, Zn, Sb, Pd, C, Pt, In,
It contains at least one of Ni, Fe, and Cr.

The sealing resin contains an epoxy-based resin as a main component, and may be an ultraviolet-curable resin and contains inorganic particles. Alternatively, Ag, P as a conductive filler
It contains at least one of d, Ni, Au, Cu, C, Pt, and Fe.

Further, holes in the resin film are opened by exposing with a laser or ultraviolet rays.

Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG.

(Embodiment 1) FIG. 1A is a schematic view of a semiconductor device according to a first embodiment of the present invention.
On the terminal electrode (pad) 11 of the semiconductor device 10 is formed a protruding electrode 12 having a height such that the metal wire is broken by a wire bonding method and has a height such that the protruding electrode 12 is crushed at the time of mounting. 1 shows an example of a semiconductor device to which a conductive adhesive 13 is supplied. The conductive adhesive 13 can be in any state such as a paste state, a cured state, or a dried state in which a solvent is scattered. Also,
The conductive adhesive 13 has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag, Pd, N
At least one of i, Au, Cu, C, Pt, and Fe can be used. Further, when the tip of the protruding electrode 12 is crushed up to about 20 μmφ, the tip can be manufactured to have an acute angle by pulling it up by plating or molten metal. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm.

FIGS. 1B and 1C show the case where the semiconductor device according to the present invention is mounted on the input / output terminal electrodes of the circuit board.
An EM cross-sectional photograph is shown. FIG. 1B is an overall image, and FIG.
2 is an enlarged photograph of a bonding interface in which the portion A in FIG. 1B is enlarged. The protruding electrode 12 is formed by tearing using an Au wire, and the conductive adhesive 1 containing an Ag filler at the tip is used.
3 was transferred and mounted at a mounting load of 20 g / bump. The circuit board used was a glass epoxy board (FR4). The tip of the protruding electrode 12 deforms following the electrode surface of the circuit board,
From the enlarged photograph, it was found that conduction was obtained in a state where the conductive adhesive layer was present. It has been found that a stable connection with a low load can be obtained as compared with the conventional ACF. Since the conductive adhesive layer enables low-load mounting and also has a stress relieving effect, a structure having a secure connection reliability was obtained.

In FIG. 2, a bump electrode (bump) 12 of a semiconductor device (IC board) 10 is mounted on an input / output terminal electrode 15 of a circuit board 14 via a bonding layer 13 and reinforced with a sealing resin 16. Shows the structure.

[0036]

[Table 1] Table 1 shows the results of examining the deterioration of the elements in the semiconductor device when the Ni-Au electroless plating bump is used as the bump electrode 12, the solder is used as the bonding layer 13, and the ultraviolet curing resin is used as the sealing resin 16. I have. A result was obtained in which the threshold voltage of the Nch MOS transistor fluctuated by 10% after the mounting after mounting.

[0037]

[Table 2] Table 2 shows that Au bumps formed by wire bonding as the protruding electrodes 12
7 shows a result of a case where the semiconductor device is mounted on the input / output terminal electrode 15 of the circuit board 14 through the substrate and sealed with a general epoxy-based sealing resin 16. Unlike the case of Table 1, the change in the threshold voltage of the Nch MOS transistor was 0.7% or less. There was no bit error in the SRAM, and it was good even after mounting.

From the above, in the case of Table 1, since there is no element that can be relaxed at the connection portion, the curing shrinkage stress that acts when the sealing resin 16 is cured directly acts on the semiconductor device 10, so that the threshold voltage Was found to be fluctuating.
Further, in Table 2, it was found that since the conductive adhesive 13 was soft, the curing shrinkage stress of the sealing resin 16 was reduced, and good results were obtained without applying any stress on the element. It was also found from the stress analysis that when the conductive adhesive 13 was used, almost no stress was generated. That is, it has been found that the conductive adhesive 13 is an effective element for stress relaxation.

According to the semiconductor device configured as described above, by using the conductive adhesive 13 for the bonding layer, a mounting load is not required until the electrodes of the substrate are deformed. Does not damage wiring. Further, the tip of the protruding electrode 12 is sharp, and the
When the tip of the substrate abuts against the input / output terminal electrode 15 and is crushed, the electrodes are connected to each other. Therefore, even if the substrate has warp and undulation, it can be absorbed by the protruding electrode 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Furthermore, there is no damage in mounting on the element, and low-cost mounting becomes possible.

(Embodiment 2) FIG. 3 is a schematic view of a semiconductor device according to a second embodiment of the present invention. A metal wire is torn off by a wire bonding method on the terminal electrode 11 of the semiconductor device 10 to form a protruding electrode 12 having a height that can be crushed at the time of mounting. 1 shows an example of a semiconductor device in which an elastomer (elastic body) 17 is formed. After that, a conductive adhesive is supplied to the tip of the protruding electrode 12 to enable simultaneous thermal compression mounting. The conductive adhesive can be in a paste state, a cured state, or a dried state in which a solvent is scattered. In addition, the conductive adhesive has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag, Pd, Ni, Au, Cu,
At least one of C, Pt, and Fe can be used. Further, the protruding electrode 12 has a crushed tip of 20 μmφ.
If it is up to the extent, it can be manufactured with a sharp edge by plating or dipping the molten metal and pulling up. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm. Furthermore, the elastic body 17 may be a silicone resin, a synthetic rubber, or a resin or rubber having the same degree of elasticity as those, and the material is not particularly limited.

According to the semiconductor device configured as described above, by using the conductive adhesive for the bonding layer, a mounting load is not required until the electrodes of the substrate are deformed, and the mounting can be performed with a low load. Does not damage. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive alleviates the stress at the time of mounting, and can prevent deterioration of element characteristics, disconnection of wiring, and the like. Further, the elastomer (elastic body) 17 can relieve the stress acting on the element in the semiconductor device 10 generated at the time of mounting, and can prevent the characteristic deterioration of the element and the disconnection of the wiring. Furthermore, there is no damage in mounting on the element, and low-cost mounting becomes possible.

(Embodiment 3) FIG. 4 is a schematic view of a method for manufacturing a semiconductor device according to a third embodiment of the present invention. That is, the coating electrode 18 of the conductive adhesive is provided, and the protruding electrode 12 having a sharp tip, which is formed by tearing a metal wire by a wire bonding method on the terminal electrode 11 of the semiconductor device 10 and has a height which is crushed at the time of mounting, An example is shown in which the conductive adhesive is transferred to the tip of the protruding electrode 12 by applying it to the coating film 18. The thickness of the coating film 18 of the conductive adhesive is set to be smaller than the height of the second-stage torn portion of the bump electrode 12. The conductive adhesive 13 has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag,
At least one of Pd, Ni, Au, Cu, C, Pt, and Fe can be used. In addition, the projection electrode 12
If the crushing of the tip is up to about 20 μmφ, the tip can be manufactured with an acute angle by plating and dipping the molten metal and pulling up. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm.

According to the method of manufacturing a semiconductor device having the above-described structure, the conductive adhesive 13 is transferred to the tip of the protruding electrode 12, and a mounting load is not required until the electrode of the substrate is deformed. Can be mounted and does not damage elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Furthermore, there is no damage in mounting on the element, and low-cost mounting becomes possible.

(Embodiment 4) FIG. 5 is a schematic diagram of a semiconductor device mounting method according to a fourth embodiment of the present invention. A metal wire is torn off by wire bonding on the terminal electrode 11 of the semiconductor device 10 to form a protruding electrode 12 having a height that can be crushed during mounting, and a conductive adhesive 13 2 shows an example of a semiconductor device configured to supply. The semiconductor device 10
Resin film (film) 1 existing on input / output terminal electrode 15
9 is thermocompression-bonded to a circuit board 14 having the same. here,
If the crush of the tip is up to about 20 μmφ, the protruding electrode 1
2 can be any of a protruding electrode formed using a wire bonding method, a protruding electrode formed using a plating method or an electroless plating method, and a protruding electrode formed by pulling up from a molten metal. . However, in the case of a torn bump formed by using a wire bonding method, the penetrating force of the resin film 19 is increased, and a stable connection can be obtained by mounting with a lower load. In addition,
The height variation at the time of manufacturing the protruding electrode 12 is about 10 μm. For example, Au, Sn, Ag, P
At least one of b, Bi, Cu, Zn, Sb, Pd, C, and Pt is included. In addition, the conductive adhesive 13
Is a composition mainly composed of an epoxy resin, and the conductive filler includes, for example, Ag, Pd, Ni, Au, Cu,
At least one of C, Pt, and Fe can be used. In addition, the resin film 19 may include an epoxy resin as a main component, an insulating resin including only inorganic particles such as SiO ₂ , Al ₂ O ₃ , and SiN, or a conductive particle such as Ag or Pd. , Ni, Au, Cu,
An anisotropic conductive resin containing at least one of C, Pt, Fe and the like can also be used. Because the conductive adhesive 13 is provided, the connection is possible even if there is no mounting load such that the conductive particles in the resin film 19 are sandwiched between the electrodes of the semiconductor device 10 and the circuit board 14. Because.

According to the mounting method of the semiconductor device configured as described above, by using the conductive adhesive 13 for the bonding layer, it is possible to mount the semiconductor device with a low load without requiring a mounting load until the electrodes of the substrate are deformed. It does not damage the elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Further, since the circuit board 14 is supplied with the resin film 19 from the beginning, the conductive adhesive 13 and the resin film 19 can be packaged by thermocompression bonding at a time. Low-cost mounting is possible.

(Fifth Embodiment) FIG. 6 is a schematic diagram of a method of mounting a semiconductor device according to a fifth embodiment of the present invention. A metal wire is torn off by wire bonding on the terminal electrode 11 of the semiconductor device 10 to form a protruding electrode 12 having a height that can be crushed during mounting, and a conductive adhesive 13 1 shows an example of a semiconductor device to which is supplied. The semiconductor device 10 has a resin film (film) 19 existing on the input / output terminal electrode 15 so that the input / output terminal electrode 15 is exposed at a portion of the resin film 19 where the connection portion of the semiconductor device 10 is formed. It is thermocompression-bonded to the circuit board 14 having the hole 20. Here, if the crush of the tip is up to about 20 μmφ, the protruding electrode 12 may be formed using a wire bonding method, a protruding electrode formed using a plating method or an electroless plating method, Any of the protruding electrodes produced by pulling up from above can be used. However, if the tear bump is formed by using the wire bonding method, the penetrating force of the resin film is increased, and a stable connection can be obtained by mounting with a lower load. In addition, the projection electrode 1
The height variation during the manufacture of No. 2 is about 10 μm. Hole 2
0 can be opened by a laser, or a desired hole 20 can be opened by exposure using ultraviolet rays. For example, Au, Sn, Ag, Pb,
At least one of Bi, Cu, Zn, Sb, Pd, C, and Pt is included. The conductive adhesive 13 has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag, Pd, Ni, Au, Cu, C, Pt,
At least one of Fe can be used. The resin film 19 contains an epoxy resin as a main component,
₂ or Al ₂ O ₃ , an insulating resin containing only particles of an inorganic substance such as SiN, or at least one of Ag, Pd, Ni, Au, Cu, C, Pt, and Fe as conductive particles. Alternatively, an anisotropic conductive resin containing one of them may be used. Because the conductive adhesive 13 is provided, the connection is possible even if there is no mounting load such that the conductive particles in the resin film 19 are sandwiched between the electrodes of the semiconductor device 10 and the circuit board 14. Because.

According to the mounting method of the semiconductor device configured as described above, by using the conductive adhesive 13 for the bonding layer, it is possible to mount the semiconductor device with a low load without requiring a mounting load until the electrode of the substrate is deformed. It does not damage the elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. A hole 20 is formed in the resin film 19, and the conductive adhesive 13 is applied to the circuit board 1 during mounting.
4 can reliably contact the input / output terminal electrode 15, reduce the stress at the time of mounting, prevent deterioration of element characteristics, disconnection of wiring, and the like.
5 can be reliably performed. Furthermore, from the beginning, the resin film 19 is formed.
Since the circuit board 14 is supplied with the conductive adhesive 13, the conductive adhesive 13 and the resin film 19 can be mounted at a time by thermocompression bonding, and can be mounted at low cost without damage even on the device. Become.

(Embodiment 6) FIG. 7 is a schematic diagram of a semiconductor device mounting method according to a sixth embodiment of the present invention. Forming a protruding electrode 12 having a sharp end with a height that can be broken at the time of mounting by tearing a metal wire on the terminal electrode 11 of the semiconductor device by a wire bonding method; and
1 shows an example of a semiconductor device in which a conductive adhesive 13 is supplied to a tip of a protruding electrode 12. The semiconductor device 10 is thermo-compression mounted on the circuit board 14 to which the sealing resin 21 has been supplied in advance. Here, if the crush of the tip is up to about 20 μmφ, the protruding electrode 12 is melted, whether it is a protruding electrode formed using a wire bonding method or a protruding electrode formed using a plating method or an electroless plating method. Any of the protruding electrodes formed by pulling up from a metal can be used. However, in the case of a tear bump formed by using a wire bonding method, the penetration force of the sealing resin 21 is increased, and a stable connection can be obtained by mounting with a lower load. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm. The protruding electrode 12 is, for example, A
u, Sn, Ag, Pb, Bi, Cu, Zn, Sb, P
It contains at least one of d, C, and Pt. In addition, the conductive adhesive 13 has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag, Pd,
At least one of Ni, Au, Cu, C, Pt, and Fe
One can be used. The sealing resin 21 contains an epoxy-based resin as a main component, and includes SiO ₂ , Al ₂ O ₃ , S
An insulating resin containing only inorganic particles such as iN can be used, and conductive particles such as Ag, Pd,
At least one of Ni, Au, Cu, C, Pt, and Fe
Alternatively, an anisotropic conductive resin containing one of them may be used. Because there is a layer of the conductive adhesive 13, the sealing resin 21
This is because connection is possible even if there is no mounting load such that the conductive particles therein are sandwiched between the respective electrodes of the semiconductor device 10 and the circuit board 14.

According to the mounting method of the semiconductor device configured as described above, by using the conductive adhesive 13 for the bonding layer, it is possible to mount the semiconductor device with a low load without requiring a mounting load until the electrodes of the substrate are deformed. It does not damage the elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Further, since the circuit board 14 is supplied with the sealing resin 21 from the beginning, the conductive adhesive 13 and the sealing resin 21 can be packaged by thermocompression bonding at one time. And low-cost implementation is possible.

(Embodiment 7) FIGS. 8 and 9 are schematic diagrams of a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus according to a seventh embodiment of the present invention. A protruding electrode 12 having a sharpened tip is formed on a terminal electrode 11 of the semiconductor device 10 by a wire bonding method so that a metal wire is torn off during mounting, and the protruding electrode 1 is formed.
2 shows an example of a semiconductor device in which a conductive adhesive 13 is supplied to the tip of the semiconductor device 2 by transfer. A holding jig 22, a transfer jig 23, and a heating jig 24, each having a suction function, are prepared.
Then, the semiconductor device 10 is transferred to the transfer jig 23 and further transferred to the heating jig 24 heated by the heater 25. In the heating jig 24, the conductive adhesive 13 is cured or the solvent is scattered by the heat already heated, and the semiconductor device 10 can be mounted in that state. As long as the protruding electrode 12 has a tip crush of up to about 20 μmφ, the protruding electrode formed by using a wire bonding method or the protruding electrode formed by using a plating method or an electroless plating method can be pulled up from a molten metal. Any of the bump electrodes manufactured by the above method can be used.
However, in the case of a tear bump formed by using a wire bonding method, the penetrating force of the sealing resin is increased, and a stable connection can be obtained by mounting with a lower load. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm. For example, Au, Sn, Ag,
It contains at least one of Pb, Bi, Cu, Zn, Sb, Pd, C, and Pt. In addition, the conductive adhesive 13
Is a composition mainly composed of an epoxy resin, and the conductive filler includes, for example, Ag, Pd, Ni, Au, Cu,
At least one of C, Pt, and Fe can be used.

According to the semiconductor device manufacturing method and the semiconductor device manufacturing apparatus configured as described above, by using the conductive adhesive 13 for the bonding layer, a mounting load is not required until the electrodes of the substrate are deformed. It can be mounted with low load and does not damage elements and wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. Also,
The conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Also, there is no damage in mounting on the element, and low-cost mounting becomes possible. In addition, by using the holding jig 22, the transfer jig 23, and the heating jig 24, the step of transferring the conductive adhesive 13 and the step of mounting the conductive adhesive 13 can be separated, and mass productivity is improved. Further, the curing of the conductive adhesive 13 or the scattering of the solvent can be efficiently performed in a series of processes.

(Embodiment 8) FIGS. 10 and 11
FIG. 14 is a schematic view of a method for mounting a semiconductor device according to an eighth embodiment of the present invention. A protruding electrode 1 having a sharp end with a height that can be broken at the time of mounting by breaking a metal wire on a terminal electrode 11 of a semiconductor device 10 by a wire bonding method.
2 shows an example of a semiconductor device in which a conductive adhesive 13 is supplied to the tip of a protruding electrode 12. The semiconductor device 10 is mounted on the circuit board 14 having the temporarily supplied temporary fixing resin 26, and the temporary fixing resin 26 is cured. At this time, the conductive adhesive 13 may or may not be cured. Thereafter, the sealing resin 28 is
And is sealed in the gap between the semiconductor device 10 and the circuit board 14 and cured to complete the mounting. At this time, the hardening of the sealing resin 28 may be performed by using both heat and load by a heating and pressing jig 24a, or may be performed by heating and atmosphere on the semiconductor device 10 side and the suction stage 29 side having a heater. Either heating is possible. Further, the temporary fixing resin 26 does not spread to the connection portion.
The protruding electrode 12 may be formed by using a wire bonding method or a protruding electrode formed by using a plating method or an electroless plating method, as long as the crush of the tip is about 20 μmφ. Any of the protruding electrodes manufactured by pulling up from above can be used.
However, in the case of a tear bump formed by using a wire bonding method, the penetrating force of the sealing resin is increased, and a stable connection can be obtained by mounting with a lower load. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm. For example, Au, Sn, A
At least one of g, Pb, Bi, Cu, Zn, Sb, Pd, C, and Pt is included. Further, the conductive adhesive 13 has a configuration containing an epoxy resin as a main component,
For the conductive filler, for example, Ag, Pd, Ni, Au,
At least one of Cu, C, Pt, and Fe can be used. Also, temporary fastening resin 26, the sealing resin 28 contains an epoxy resin as a main component, SiO ₂ and Al
_An insulating resin containing only inorganic particles such as ₂ O ₃ and SiN can be used.
An anisotropic conductive resin containing at least one of g, Pd, Ni, Au, Cu, C, Pt, and Fe can also be used. This is because the conductive adhesive 13 has a layer, so that the connection can be performed without a mounting load such that the conductive particles in the resin are sandwiched between the electrodes of the semiconductor device 10 and the circuit board 14. is there.

According to the mounting method of the semiconductor device having the above-described structure, by using the conductive adhesive 13 for the bonding layer, it is possible to mount the semiconductor device with a low load without requiring a mounting load until the electrode of the substrate is deformed. It does not damage the elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Furthermore, if the connection state is maintained by the temporary fixing resin 26, the sealing resin 28 can be cured at a time later, which is excellent in mass productivity, and has no damage even when mounted on the element. Costly implementation is possible.

(Embodiment 9) FIG. 12 and FIG.
FIG. 15 is a schematic view of a method for mounting a semiconductor device according to a ninth embodiment of the present invention. A protruding electrode 1 having a sharp end with a height that can be broken at the time of mounting by breaking a metal wire on a terminal electrode 11 of a semiconductor device 10 by a wire bonding method.
2 shows an example of a semiconductor device in which a conductive adhesive 13 is supplied to the tip of a protruding electrode 12. The semiconductor device 10 is mounted on the circuit board 14 having the temporarily supplied temporary fixing resin 26, and the temporary fixing resin 26 is cured. At this time, the conductive adhesive 13 may or may not be cured. Thereafter, the sealing resin 28 is
And is sealed in the gap between the semiconductor device 10 and the circuit board 14 and cured to complete the mounting. At this time, the sealing resin 28 is cured by using both heat and load, and is pressed from the semiconductor device 10 side by using a pressing jig 3 using a spring.
The load is 0, heating is performed from the suction stage 29 side having a heater, or heating is performed by an atmosphere. Further, the temporary fixing resin does not spread to the connection portion. Further, the protruding electrode 12 may be a protruding electrode formed by using a wire bonding method if the crush of the tip is up to about 20 μmφ.
Either a protruding electrode formed using a plating method or an electroless plating method, or a protruding electrode formed by pulling up from a molten metal can be used. However, in the case of a torn bump formed by using the wire bonding method, the penetration force of the sealing resin 28 is increased, and a stable connection can be obtained by mounting with a lower load. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm. For example, Au, Sn, Ag, Pb, Bi,
It contains at least one of Cu, Zn, Sb, Pd, C, and Pt. In addition, the conductive adhesive 13 has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag, Pd, Ni, Au, Cu, C, Pt,
At least one of Fe can be used. Further, the temporary fixing resin 26 and the sealing resin 28 include an epoxy resin as a main component, and may be an insulating resin containing only inorganic particles such as SiO ₂ , Al ₂ O ₃ , and SiN. As particles, for example, Ag, Pd, Ni, A
An anisotropic conductive resin containing at least one of u, Cu, C, Pt, and Fe can also be used. This is because the conductive adhesive 13 has a layer, so that the connection can be performed without a mounting load such that the conductive particles in the resin are sandwiched between the electrodes of the semiconductor device 10 and the circuit board 14. is there.

According to the mounting method of the semiconductor device thus configured, by using the conductive adhesive 13 for the bonding layer, it is possible to mount the semiconductor device with a low load without requiring a mounting load until the electrode of the substrate is deformed. It does not damage the elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Further, by maintaining the connection state by the temporary fixing resin 26 and by heating the stage, it is possible to cure a large number of the sealing resins 28 at a time later, which is excellent in mass productivity and furthermore, on the element. There is no damage in mounting, and low-cost mounting is possible.

(Embodiment 10) FIGS. 14 and 15
FIG. 19 is a schematic view of a semiconductor device mounting method according to a tenth embodiment of the present invention. Terminal electrode 1 of semiconductor device 10
A semiconductor formed by forming a protruding electrode 12 having a sharp end with a height that can be broken at the time of mounting by tearing off a metal wire by a wire bonding method and supplying a conductive adhesive 13 to the front end of the protruding electrode 12. 1 shows an example of a device. A temporary fixing resin 26 is applied to the semiconductor device 10,
The temporary fixing resin 26 is mounted on the circuit board 14 and cured. At this time, the conductive adhesive 13 may or may not be cured. Thereafter, the sealing resin 28 is supplied from the supply needle 27, is sealed in the gap between the semiconductor device 10 and the circuit board 14, and is cured to complete the mounting. At this time, the sealing resin 28 is cured by using both heat and a load, and is pressed from the semiconductor device 10 side by using a pressing jig 30 using a spring.
, Heating from the suction stage 29 side having a heater, or heating by an atmosphere. Further, the temporary fixing resin 26 does not spread to the connection portion. In particular, by supplying the temporary fixing resin 26 to the semiconductor device 10 side, the wiring electrodes when supplied on the circuit board 14 get wet (anchor effect), flow to the outside, and get wet to the input / output terminal electrodes 15. Can be prevented. As long as the protruding electrode 12 has a tip crush of up to about 20 μmφ, the protruding electrode formed by using a wire bonding method or the protruding electrode formed by using a plating method or an electroless plating method can be pulled up from a molten metal. Any of the bump electrodes manufactured by using the above method can be used. However, in the case of a tear bump formed by using a wire bonding method, the penetrating force of the sealing resin is increased, and a stable connection can be obtained by mounting with a lower load. Note that the height variation at the time of manufacturing the bump electrode 12 is about 10 μm. In addition, the protruding electrode 12
For example, Au, Sn, Ag, Pb, Bi, Cu, Zn, S
It contains at least one of b, Pd, C, and Pt. The conductive adhesive 13 has a configuration containing an epoxy resin as a main component, and the conductive filler includes, for example, Ag, Pd,
At least one of Ni, Au, Cu, C, Pt, and Fe
One can be used. The temporary fixing resin 26 and the sealing resin 28 contain an epoxy resin as a main component,
₂ or Al ₂ O ₃ , an insulating resin containing only particles of an inorganic substance such as SiN, or at least one of Ag, Pd, Ni, Au, Cu, C, Pt, and Fe as conductive particles. Alternatively, an anisotropic conductive resin containing one of them may be used. This is because the conductive particles in the resin are separated from the semiconductor device 10 and the circuit board 1 by the conductive adhesive 13 layer.
This is because connection becomes possible even if there is no mounting load enough to be sandwiched between the respective electrodes 4.

According to the mounting method of the semiconductor device configured as described above, by using the conductive adhesive 13 for the bonding layer, it is possible to mount the semiconductor device with a low load without requiring a mounting load until the electrodes of the substrate are deformed. It does not damage the elements or wiring. In addition, the tips of the protruding electrodes 12 are sharp, and the tips of the protruding electrodes 12 contact the input / output terminal electrodes and are crushed during mounting, so that the electrodes are connected to each other. The absorption can be performed by the electrodes 12, and the connection between the electrodes can be reliably performed. In addition, the conductive adhesive 13 relieves stress at the time of mounting, and can prevent deterioration of element characteristics and disconnection of wiring. Further, by maintaining the connection state by the temporary fixing resin 26 and by heating the stage, it is possible to cure a large number of the sealing resins 28 at a time later, which is excellent in mass productivity and furthermore, on the element. There is no damage in mounting, and low-cost mounting is possible.

In each of the above embodiments, the protruding electrode 12 having a sharp tip is formed by, for example, tearing a metal wire using a wire bonding method. Any shape may be used as long as it has a height at which the electrode 15 comes into contact with and collapses, and the shape is not particularly limited. For example, a protruding electrode having a small diameter at the tip that can be easily crushed at the time of mounting, or a protruding electrode having a flattened tip at a height that can be crushed at the time of mounting may be used.

In the above embodiments, the electrode on the semiconductor device 10 side is the protruding electrode 12, but the electrode on the circuit board 14 side may be a protruding electrode.

[0060]

As described above, according to the present invention, since a conductive adhesive is used for the bonding layer, a low load mounting is possible without requiring a mounting load until the electrodes of the substrate are deformed. Defects such as disconnection of wiring can be prevented. In addition, since the protruding electrode has a height at which the protruding electrode is crushed during mounting, it can flexibly cope with warpage and undulation of the substrate, and connection between the electrodes can be reliably performed. Further, the reliability is improved by the conductive adhesive having a flexible property entering the bonding layer. Further, there is obtained an advantageous effect that high-performance, low-cost, thermo-compression mounting without damage can be realized for a general IC, including mounting on a device.

[Brief description of the drawings]

FIG. 1 is a schematic diagram and a SEM cross-sectional photograph of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic view of a semiconductor device mounting method according to the first embodiment of the present invention;

FIG. 3 is a schematic diagram of a semiconductor device according to a second embodiment of the present invention;

FIG. 4 is a schematic view of a method for manufacturing a semiconductor device according to a third embodiment of the present invention;

FIG. 5 is a schematic view of a semiconductor device mounting method according to a fourth embodiment of the present invention;

FIG. 6 is a schematic view of a semiconductor device mounting method according to a fifth embodiment of the present invention;

FIG. 7 is a schematic view of a semiconductor device mounting method according to a sixth embodiment of the present invention;

FIG. 8 is a schematic view of a method for manufacturing a semiconductor device according to a seventh embodiment of the present invention.

FIG. 9 is a schematic diagram of a semiconductor device manufacturing apparatus according to a seventh embodiment of the present invention;

FIG. 10 is a schematic view of a semiconductor device mounting method according to an eighth embodiment of the present invention;

FIG. 11 is a schematic view of a semiconductor device mounting method according to an eighth embodiment of the present invention;

FIG. 12 is a schematic view of a semiconductor device mounting method according to a ninth embodiment of the present invention;

FIG. 13 is a schematic diagram of a semiconductor device mounting method according to a ninth embodiment of the present invention;

FIG. 14 is a schematic view of a semiconductor device mounting method according to a tenth embodiment of the present invention;

FIG. 15 is a schematic view of a semiconductor device mounting method according to a tenth embodiment of the present invention;

FIG. 16 is a schematic view showing a conventional solder bump.

FIG. 17 is a schematic view of a conventional semiconductor device mounting method using an anisotropic conductive film (ACF).

FIG. 18 is a graph showing test results when mounting is performed using a conventional anisotropic conductive film (ACF).

FIG. 19 is a cross-sectional view of a connection portion when mounting is performed using a conventional anisotropic conductive film (ACF).

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Terminal electrode (pad) 12 Projection electrode 13 Conductive adhesive 14 Circuit board 15 I / O terminal electrode 16 Sealing resin 17 Elastomer (elastic body) 18 Coating film of conductive adhesive 19 Resin film (film) 20 Hole 21 Sealing resin 22 Holding jig 23 Transfer jig 24 Heating jig 24a Heating and pressing jig 25 Heater 26 Temporary fixing resin 27 Supply needle 28 Sealing resin 29 Suction stage 30 Pressing jig

 ──────────────────────────────────────────────────の Continued on the front page (72) Yoshihiro Tomura 1006 Kazuma Kadoma, Osaka Pref.Matsushita Electric Industrial Co., Ltd. F term (reference) 5F044 LL09 LL11 QQ02 RR17 RR18 RR19 5F061 AA01 CA05 CA10 CB03

Claims (30)

[Claims] 1. A semiconductor device comprising: a terminal electrode; a protruding electrode provided on the terminal electrode and having a height to be crushed during mounting; and a conductive adhesive provided on a tip of the protruding electrode. 2. The semiconductor device according to claim 1, wherein an elastic body is provided in at least a part of a region where the element exists. 3. The semiconductor device according to claim 2, wherein the elastic body is a resin or rubber having elasticity such as silicon resin. 4. A step of preparing a coating film of a conductive adhesive,
Forming a protruding electrode having a height that is crushed during mounting on a terminal electrode of the semiconductor device, and immersing a tip of the protruding electrode in a coating film of the conductive adhesive to apply a conductive adhesive to the protruding electrode. Transferring to the tip. 5. A semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode and a conductive adhesive is provided at a tip of the protruding electrode, at least the input device is provided on an input / output terminal electrode. A method of mounting on a circuit board provided with a resin film so as to cover an output terminal electrode, wherein heat and a load are used in combination to penetrate the molten resin film so that the protrusion electrode is connected to the input / output terminal electrode. A method for mounting a semiconductor device, comprising connecting. 6. A semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode and a conductive adhesive is provided at a tip of the protruding electrode, at least the input device is provided on an input / output terminal electrode. A method of providing a resin film so as to cover an output terminal electrode, and mounting the resin film on a circuit board having a hole formed by exposing the input / output terminal electrode at least at a connection portion of the projecting electrode. A method of mounting a semiconductor device, comprising: connecting a projecting electrode to the input / output terminal electrode by using a load together; and reinforcing a periphery of a connecting portion with the molten resin film. 7. A semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode, the input / output terminal electrode and at least one of a mounting area A method of mounting on a circuit board having a sealing resin partially supplied, wherein the projecting electrode is connected to the input / output terminal electrode by using both heat and a load, and the sealing resin is used. A method for mounting a semiconductor device, wherein a periphery of a connection portion is reinforced. 8. A step of preparing a coating film of a conductive adhesive,
Forming a protruding electrode having a height to be crushed during mounting on a terminal electrode of the semiconductor device; and adsorbing and holding the semiconductor device with a holding jig and applying a tip of the protruding electrode to a coating film of the conductive adhesive. Transferring the conductive adhesive to the tips of the protruding electrodes by dipping, transferring the semiconductor device from the holding jig to a transfer jig to attract and hold, and heating the semiconductor device from the transfer jig Transferring the adhesive to a jig, holding it by suction, heating the conductive adhesive, and curing or scattering the solvent. 9. A tip of a protruding electrode having a height to be crushed when mounting the semiconductor device is immersed in a coating of a conductive adhesive by holding the semiconductor device by suction, and the conductive adhesive is transferred to a tip of the protruding electrode. A holding jig to be transferred, a transfer jig for receiving and holding the semiconductor device from the holding jig, and a transfer jig for receiving and holding the semiconductor device from the transfer jig and heating the conductive adhesive to cure or remove the solvent. An apparatus for manufacturing a semiconductor device comprising a heating jig for scattering. 10. A semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode, the input / output terminal electrode and at least a mounting area. A method of mounting on a circuit board having a temporary fixing resin supplied to a part thereof, wherein a step of applying a load to connect the projecting electrode to the input / output terminal electrode, and curing the conductive adhesive A step of encapsulating a sealing resin in a gap between the semiconductor device and the circuit board, and a step of curing the sealing resin from the semiconductor device side by using heat or a combination of heat and load. Implementation method. 11. A semiconductor device in which a protruding electrode having a height to be crushed at the time of mounting is formed on a terminal electrode, and a conductive adhesive is provided at a tip of the protruding electrode, and at least an input / output terminal electrode and a mounting area are provided. A method of mounting on a circuit board having a temporary fixing resin supplied to a part thereof, wherein a step of applying a load to connect the projecting electrode to the input / output terminal electrode, and curing the conductive adhesive. A step of encapsulating a sealing resin in a gap between the semiconductor device and the circuit board, and a step of curing the sealing resin by applying a heat from the semiconductor device side and applying heat from the stage. Implementation method. 12. A temporary fixing resin formed on a terminal electrode, a protruding electrode having a height to be crushed at the time of mounting, a conductive adhesive provided on a tip of the protruding electrode, and supplied to at least a part of a mounting area. A method of mounting a semiconductor device having an input / output terminal electrode on a circuit board having an input / output terminal electrode, the method comprising: applying a load to connect the projecting electrode to the input / output terminal electrode; and curing the conductive adhesive. A semiconductor device including: a step of encapsulating a sealing resin in a gap between the semiconductor device and the circuit board; and a step of curing the sealing resin by applying a load from the semiconductor device and applying heat from a stage. How to implement. 13. The semiconductor device according to claim 1, wherein the tip of the protruding electrode is sharp. 14. The method of manufacturing a semiconductor device according to claim 4, wherein the protruding electrode has a sharp tip. 15. The method of mounting a semiconductor device according to claim 5, wherein a tip of the protruding electrode is sharp. 16. The apparatus according to claim 9, wherein the protruding electrode has a sharp tip. 17. The conductive filler of the conductive adhesive comprises A
The semiconductor device according to claim 1, wherein the semiconductor device contains at least one of g, Pd, Ni, Au, Cu, C, Pt, and Fe. 18. The conductive filler of the conductive adhesive comprises A
9. The method for manufacturing a semiconductor device according to claim 4, wherein the method includes at least one of g, Pd, Ni, Au, Cu, C, Pt, and Fe. 19. The conductive filler of the conductive adhesive comprises A
12. The semiconductor device according to claim 10, wherein the material contains at least one of g, Pd, Ni, Au, Cu, C, Pt, and Fe. Item 13. A method for mounting a semiconductor device according to item 12. 20. The conductive filler of the conductive adhesive comprises A
10. The apparatus for manufacturing a semiconductor device according to claim 9, comprising at least one of g, Pd, Ni, Au, Cu, C, Pt, and Fe. 21. The method according to claim 5, wherein the resin film contains an epoxy-based resin as a main component and contains inorganic particles. 22. A resin film containing an epoxy-based resin as a main component and Ag, Pd, Ni, A as a conductive filler.
7. The method according to claim 5, wherein at least one of u, Cu, C, Pt, and Fe is included. 23. The projection electrode is made of Au, Sn, Ag, P
b, Bi, Cu, Zn, Sb, Pd, C, Pt, In,
4. The method according to claim 1, wherein at least one of Ni, Fe, and Cr is contained.
13. The semiconductor device according to claim 1. 24. The protruding electrode is made of Au, Sn, Ag, P
b, Bi, Cu, Zn, Sb, Pd, C, Pt, In,
9. The method for manufacturing a semiconductor device according to claim 4, wherein the method includes at least one of Ni, Fe, and Cr. 25. The projection electrode is made of Au, Sn, Ag, P
b, Bi, Cu, Zn, Sb, Pd, C, Pt, In,
8. The method according to claim 5, wherein at least one of Ni, Fe, and Cr is contained.
13. The method for mounting a semiconductor device according to claim 10 or claim 11. 26. The projection electrode is made of Au, Sn, Ag, P
b, Bi, Cu, Zn, Sb, Pd, C, Pt, In,
10. The apparatus for manufacturing a semiconductor device according to claim 9, comprising at least one of Ni, Fe, and Cr. 27. The sealing resin is an epoxy resin,
13. The method of mounting a semiconductor device according to claim 7, comprising inorganic particles. 28. The sealing resin is an epoxy resin,
Ag, Pd, Ni, Au, Cu, as conductive filler
11. The method according to claim 7, wherein at least one of C, Pt, and Fe is contained.
The method for mounting a semiconductor device according to claim 1. 29. The method according to claim 6, wherein the hole in the resin film is formed by a laser. 30. The method according to claim 6, wherein the holes in the resin film are opened by exposing with ultraviolet light.