JP2002137155A - Method and device for grinding outer periphery of work - Google Patents

Method and device for grinding outer periphery of work

Info

Publication number
JP2002137155A
JP2002137155A JP2000328139A JP2000328139A JP2002137155A JP 2002137155 A JP2002137155 A JP 2002137155A JP 2000328139 A JP2000328139 A JP 2000328139A JP 2000328139 A JP2000328139 A JP 2000328139A JP 2002137155 A JP2002137155 A JP 2002137155A
Authority
JP
Japan
Prior art keywords
polishing
work
diameter portion
workpiece
inner peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000328139A
Other languages
Japanese (ja)
Other versions
JP3445237B2 (en
Inventor
Katsunori Nagao
勝則 永尾
Isao Nagahashi
勲 長橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
System Seiko Co Ltd
Original Assignee
System Seiko Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by System Seiko Co Ltd filed Critical System Seiko Co Ltd
Priority to JP2000328139A priority Critical patent/JP3445237B2/en
Publication of JP2002137155A publication Critical patent/JP2002137155A/en
Application granted granted Critical
Publication of JP3445237B2 publication Critical patent/JP3445237B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To perform machining of a chamfer surface without the occurrence of a step to the surface of a disc-form work, such as a semiconductor wafer. SOLUTION: A chamfer surface formed at the outer peripheral part of a work W is polished through relative rotation of a grinding ring 27 and a work by at least either one of the grinding ring or the work. The polishing ring 27 has an inner peripheral grinding surface 35 in a recess shape formed in an inclination state between a small diameter part 33 and a large diameter part 34, and a rotation center axis Ow of the work is inclined on a base of a grinding center axis Og and the chamfer surface is brought into contact with the inner peripheral grinding surface 35 in a manner that the work W crosses the inner peripheral grinding surface 35. Since this action brings overhang parts Wa and Wb of the work W into a state to be pushed out from the small diameter part 33 and the large diameter part 34, a polishing pad is prevented from making contact with the surface side of the work W and a step is prevented from occurring to the work W as a result of machining.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はシリコン半導体ウエ
ハなどの円板状のワークの外周に形成されたチャンファ
面を研磨するワーク外周の研磨加工技術に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a polishing technique of a workpiece outer periphery for polishing a chamfer surface formed on an outer periphery of a disk-shaped workpiece such as a silicon semiconductor wafer.

【0002】[0002]

【従来の技術】半導体集積回路はシリコン製の半導体ウ
エハやガリウムヒ素などの化合物半導体ウエハの表面に
一連の製造プロセスを経て形成され、半導体ウエハから
チップ片を切り出すことにより半導体集積回路装置つま
り半導体デバイスが製造される。
2. Description of the Related Art A semiconductor integrated circuit is formed on a surface of a semiconductor wafer made of silicon or a compound semiconductor wafer such as gallium arsenide through a series of manufacturing processes, and a chip is cut out from the semiconductor wafer to form a semiconductor integrated circuit device, that is, a semiconductor device. Is manufactured.

【0003】シリコン半導体ウエハは、円柱形状のシリ
コン単結晶インゴットからカッターにより円板状に切り
出すことによって形成される。それぞれの半導体ウエハ
の両面外周部は砥石を用いた面取り加工によってチャン
ファ面つまりベベル部が研削加工されるとともに外周面
が研削加工され、さらに、これらは研磨パッドを用いて
ラッピング加工やポリッシング加工される。
A silicon semiconductor wafer is formed by cutting a cylindrical silicon single crystal ingot into a disk shape using a cutter. The chamfering process using a grindstone is performed on the chamfering surface, that is, the bevel portion, of the outer peripheral surface of each semiconductor wafer, and the outer peripheral surface is also grinded. Further, these are subjected to lapping or polishing using a polishing pad. .

【0004】半導体ウエハの外周部に加工されたチャン
ファ面をラッピング加工したりポリッシング加工するた
めに、従来では、半球形状の研磨面を有する研磨パッド
を回転し、円板状の半導体ウエハのチャンファ面を球形
状の研磨面に押し付けた状態として、半導体ウエハつま
りワークを回転させている。このような研磨装置つまり
面取り加工装置としては、たとえば、特開平10-29142号
公報に開示されるようなものがある。
Conventionally, in order to lap or polish a chamfer surface formed on an outer peripheral portion of a semiconductor wafer, a polishing pad having a hemispherical polishing surface is rotated, and a chamfer surface of a disc-shaped semiconductor wafer is rotated. Is pressed against the spherical polishing surface, and the semiconductor wafer, that is, the work is rotated. An example of such a polishing apparatus, that is, a chamfering apparatus, is disclosed in Japanese Patent Application Laid-Open No. 10-29142.

【0005】[0005]

【発明が解決しようとする課題】このような従来の面取
り加工装置を用いて半導体ウエハのチャンファ面の研磨
加工を行うと、チャンファ面のみならず、半導体ウエハ
の表面のうちチャンファ面に隣接した部位が研磨パッド
により研磨加工されてしまい、その部分に段差が発生す
ることがあった。特に、同じ研磨パッドで繰り返して多
数枚の半導体ウエハの加工を行い、研磨パッドの研磨面
に半導体ウエハの押し付け力によるトラック状の溝が発
生すると、半導体ウエハの表面に段差が顕著に発生し
た。
When the chamfering surface of a semiconductor wafer is polished using such a conventional chamfering apparatus, not only the chamfering surface but also a portion of the semiconductor wafer surface adjacent to the chamfering surface is polished. Was polished by a polishing pad, and a step was sometimes generated in that portion. In particular, when a large number of semiconductor wafers are repeatedly processed with the same polishing pad and track-like grooves are generated on the polishing surface of the polishing pad by the pressing force of the semiconductor wafer, a significant step is formed on the surface of the semiconductor wafer.

【0006】段差が発生した半導体ウエハは使用するこ
とができないので、研磨パッドを頻繁に新品と交換しな
ければらなず、加工能率を向上させる上でネックとなっ
ている。また、面取り加工時に半導体ウエハの表面に段
差が発生すると、その半導体ウエハを使用することがで
きないので、加工歩留りを低下させることになる。
[0006] Since a semiconductor wafer having a step cannot be used, the polishing pad must be frequently replaced with a new one, which is a bottleneck in improving the processing efficiency. Further, if a step occurs on the surface of the semiconductor wafer during the chamfering process, the semiconductor wafer cannot be used, thereby lowering the processing yield.

【0007】本発明の目的は、半導体ウエハなどの円板
状のワークの表面に段差を発生させることなく、チャン
ファ面を加工し得るようにすることにある。
An object of the present invention is to make it possible to process a chamfer surface without generating a step on the surface of a disk-shaped work such as a semiconductor wafer.

【0008】[0008]

【課題を解決するための手段】本発明のワーク外周の研
磨加工方法は、円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨方法であっ
て、小径部と大径部との間に傾斜して形成された内周研
磨面を有する研磨リングの前記内周研磨面に、前記チャ
ンファ面のうち前記ワークの中心から相互にほぼ180
°位相がずれた部分が前記小径部と前記大径部からせり
出すように研磨中心軸をワーク中心軸に対して傾斜させ
て前記チャンファ面を押し付け、前記ワークと前記研磨
リングとを相対的に回転させることを特徴とする。
The method for polishing the outer periphery of a work according to the present invention is a method for polishing the outer periphery of a work for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work. The inner peripheral polishing surface of the polishing ring having an inner peripheral polishing surface formed to be inclined with respect to the diameter portion is substantially 180 ° apart from the center of the work in the chamfer surface.
° The polishing center axis is inclined with respect to the work center axis to press the chamfer surface so that the phase-shifted portion protrudes from the small-diameter portion and the large-diameter portion, and the work and the polishing ring are relatively rotated. It is characterized by making it.

【0009】本発明のワーク外周の研磨方法は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨方法であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
を研磨中心軸周りに回転し、前記チャンファ面のうち前
記ワークの中心から相互にほぼ180°位相がずれた部
分が前記小径部と前記大径部からせり出すようにワーク
中心軸を前記研磨中心軸に対して傾斜させた状態のもと
で、前記チャンファ面を前記内周研磨面に押し付けなが
ら前記ワークを回転することを特徴とする。
The method for polishing the outer periphery of a work according to the present invention is a method for polishing the outer periphery of a work for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work, wherein a slope between a small diameter portion and a large diameter portion is provided. A polishing ring having an inner peripheral polishing surface formed as described above is rotated around a polishing center axis, and a portion of the chamfer surface which is shifted from the center of the work by approximately 180 ° with respect to each other has the small diameter portion and the large diameter portion. The workpiece is rotated while pressing the chamfer surface against the inner peripheral polishing surface in a state where the workpiece central axis is inclined with respect to the polishing central axis so as to protrude from the portion.

【0010】本発明のワーク外周の研磨方法は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨方法であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
の前記内周研磨面に、前記チャンファ面のうち前記ワー
クの中心から相互にほぼ180°位相がずれた部分が前
記小径部と前記大径部からせり出すように研磨中心軸を
ワーク中心軸に対して傾斜させて前記チャンファ面を押
し付け、前記ワークと前記研磨リングとを相対的に回転
し、前記研磨中心軸と前記ワーク中心軸とが相対的に首
振り運動するように、前記研磨リングと前記ワークの少
なくともいずれか一方を揺動往復動することを特徴とす
る。
The method for polishing the outer periphery of a work according to the present invention is a method for polishing the outer periphery of a work for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work, wherein a slope between a small diameter portion and a large diameter portion is provided. A portion of the chamfer surface, which is substantially 180 ° out of phase with respect to the center of the workpiece, is formed on the inner peripheral polishing surface of the polishing ring having the inner peripheral polishing surface formed by the small diameter portion and the large diameter portion. The grinding center axis is inclined with respect to the work center axis so as to protrude, and the chamfer surface is pressed to rotate the work and the polishing ring relatively, so that the grinding center axis and the work center axis are relatively positioned. At least one of the polishing ring and the work is reciprocated in a swinging manner so as to swing.

【0011】本発明のワーク外周の研磨方法は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨方法であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
の前記内周研磨面に、研磨中心軸をワーク中心軸に対し
て傾斜させて、前記チャンファ面を押し付けた状態のも
とで、前記ワークと前記研磨リングとを相対的に回転さ
せ、前記チャンファ面全体が前記内周研磨面に接触した
状態での全周研磨加工と、前記チャンファ面のうち前記
ワークの中心から相互にほぼ180°位相がずれた部分
を前記小径部と前記大径部からせり出させた状態でのオ
ーバーハング研磨加工とを行うことを特徴とする。
The method for polishing the outer periphery of a work according to the present invention is a method for polishing the outer periphery of a work in which a chamfer surface formed on an outer peripheral portion of a disk-shaped work is polished, wherein a slope between a small diameter portion and a large diameter portion is provided. On the inner peripheral polishing surface of the polishing ring having the inner peripheral polishing surface formed as above, the polishing center axis is inclined with respect to the work central axis, and under the state where the chamfer surface is pressed, the workpiece and the The polishing ring is relatively rotated, and the entire circumference polishing process in a state where the entire chamfer surface is in contact with the inner peripheral polishing surface, and the phase of the chamfer surface is substantially 180 ° relative to the center of the work. An overhang polishing process is performed in a state where the shifted portion is protruded from the small diameter portion and the large diameter portion.

【0012】本発明のワーク外周の研磨装置は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨装置であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
と、前記チャンファ面のうち前記ワークの中心から相互
にほぼ180°位相がずれた部分が前記小径部と前記大
径部からせり出すようにワーク中心軸を前記研磨中心軸
に対して傾斜させて前記ワークを保持するワーク保持具
と、前記チャンファ面を前記内周研磨面に押し付けなが
ら前記ワークと前記研磨リングとを相対的に回転する回
転手段とを有することを特徴とする。
The polishing apparatus for polishing the outer periphery of a work according to the present invention is a polishing apparatus for polishing the outer periphery of a workpiece formed by polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work. A polishing ring having an inner peripheral polishing surface formed as described above, and a work center such that a portion of the chamfer surface which is substantially 180 ° out of phase from the center of the work protrudes from the small diameter portion and the large diameter portion. A work holder for holding the work by inclining an axis with respect to the polishing center axis, and rotating means for relatively rotating the work and the polishing ring while pressing the chamfer surface against the inner peripheral polishing surface; It is characterized by having.

【0013】本発明のワーク外周の研磨装置は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨装置であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
と、前記研磨リングを回転する研磨リング回転手段と、
前記チャンファ面のうち前記ワークの中心から相互にほ
ぼ180°位相がずれた部分が前記小径部と前記大径部
からせり出すようにワーク中心軸を前記研磨中心軸に対
して傾斜させて前記ワークを保持するワーク保持具と、
前記チャンファ面を前記内周研磨面に押し付けながら前
記ワークを回転するワーク回転手段とを有することを特
徴とする。
The polishing apparatus for polishing the outer periphery of a work according to the present invention is a polishing apparatus for polishing an outer periphery of a work for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work. A polishing ring having an inner peripheral polishing surface formed as a polishing ring rotating means for rotating the polishing ring,
The work center axis is inclined with respect to the polishing center axis so that a portion of the chamfer surface, which is out of phase with the center of the work by approximately 180 °, protrudes from the small diameter portion and the large diameter portion. A work holder for holding,
And a work rotating means for rotating the work while pressing the chamfer surface against the inner peripheral polishing surface.

【0014】本発明のワーク外周の研磨装置は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨装置であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
と、前記チャンファ面のうち前記ワークの中心から相互
にほぼ180°位相がずれた部分が前記小径部と前記大
径部からせり出すようにワーク中心軸を前記研磨中心軸
に対して傾斜させて前記ワークを保持するワーク保持具
と、前記チャンファ面を前記内周研磨面に押し付けなが
ら前記ワークと前記研磨リングとを相対的に回転する回
転手段と、前記研磨中心軸と前記ワーク中心軸とが相対
的に首振り運動するように、前記研磨リングと前記ワー
クの少なくともいずれか一方を揺動往復動する揺動手段
とを有することを特徴とする。
An apparatus for polishing the outer periphery of a workpiece according to the present invention is an apparatus for polishing a workpiece outer periphery for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, wherein an inclined portion between a small diameter portion and a large diameter portion is provided. A polishing ring having an inner peripheral polishing surface formed as described above, and a work center such that a portion of the chamfer surface which is substantially 180 ° out of phase from the center of the work protrudes from the small diameter portion and the large diameter portion. A work holder for holding the work by inclining an axis with respect to the polishing center axis, and rotating means for relatively rotating the work and the polishing ring while pressing the chamfer surface against the inner peripheral polishing surface; Having a rocking means for rocking and reciprocating at least one of the polishing ring and the work so that the polishing center axis and the work center axis relatively swing. And butterflies.

【0015】本発明のワーク外周の研磨装置は、円板状
ワークの外周部に形成されたチャンファ面を研磨加工す
るワーク外周の研磨装置であって、小径部と大径部との
間に傾斜して形成された内周研磨面を有する研磨リング
と、研磨中心軸をワーク中心軸に対して傾斜させて前記
チャンファ面を前記内周研磨面に押し付けた状態のもと
で前記ワークを保持するワーク保持具と、前記ワークと
前記研磨リングとを相対的に回転する回転手段と、前記
研磨中心軸または前記ワーク中心軸を揺動往復動し、前
記チャンファ面全体が前記内周研磨面に接触した状態で
の全周研磨加工と、前記チャンファ面のうち前記ワーク
の中心から相互にほぼ180°位相がずれた部分を前記
小径部と前記大径部からせり出させた状態でのオーバー
ハング研磨加工とを行う揺動手段とを有することを特徴
とする。
An apparatus for polishing the outer periphery of a work according to the present invention is an apparatus for polishing the outer periphery of a work for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work. A polishing ring having an inner peripheral polishing surface formed as described above, and holding the work in a state in which the polishing center axis is inclined with respect to the work central axis and the chamfer surface is pressed against the inner peripheral polishing surface. A work holder, rotating means for relatively rotating the work and the polishing ring, and reciprocatingly swinging the polishing center axis or the work center axis, so that the entire chamfer surface comes into contact with the inner peripheral polishing surface. Polishing over the entire circumference, and overhang polishing in a state where a portion of the chamfer surface, which is out of phase with the center of the work by approximately 180 °, protrudes from the small-diameter portion and the large-diameter portion. Processing and And having a rocking means for performing.

【0016】本発明にあっては、チャンファ面の研磨加
工の開始から終了までオーバーハング研磨加工を行った
り、全周研磨加工に加えてオーバーハング加工を行うよ
うにしたので、チャンファ面の内側のワーク表面に段差
が形成されることが防止される。これにより、研磨加工
効率を向上させることができるとともに、ワークの研磨
加工品質を向上させることができる。
In the present invention, since the overhang polishing is performed from the start to the end of the polishing of the chamfer surface, or the overhang is performed in addition to the entire circumference polishing, the inside of the chamfer surface can be polished. The formation of steps on the work surface is prevented. Thereby, the polishing efficiency can be improved, and the polishing quality of the work can be improved.

【0017】[0017]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて詳細に説明する。図1は本発明の一実施の形
態であるワーク外周の研磨装置を示す断面図であり、こ
の研磨装置によりシリコン半導体ウエハをワークとし
て、その外周部表面に形成されたチャンファ面つまりベ
ベリング部が研磨加工される。半導体ウエハには結晶方
向の判別や位置合わせを行うために、オリエンテーショ
ンフラットやノッチが形成されているが、これらの部分
以外のチャンファ面が研磨加工される。
Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing a polishing apparatus for an outer periphery of a work according to an embodiment of the present invention. A silicon semiconductor wafer is used as a work and a chamfer surface, that is, a beveling portion, formed on the outer peripheral surface is polished by the polishing apparatus. Processed. An orientation flat and a notch are formed on the semiconductor wafer to determine the crystal direction and align the crystal orientation. The chamfer surface other than these portions is polished.

【0018】この研磨装置はワークWを保持するワーク
保持台11を有し、ワークWはワーク保持台11の上面
に載置される。ワークWはワーク保持台11の表面に開
口して形成された真空路に供給される負圧空気によって
吸着して保持されるようになっている。このワーク保持
台11には回転シャフト12が固定されており、この回
転シャフト12は基台13に上下動自在に設けられた上
下動プレート14に回転自在に装着されている。この上
下動プレート14にはモータ15が取り付けられ、モー
タ15のシャフトに固定された歯車16と、回転シャフ
ト12に固定された歯車17とが噛み合い、ワーク回転
手段としてのモータ15によってワーク保持台11が回
転駆動され、ワーク保持台11に保持されたワークWは
ワーク中心軸Owを中心に回転駆動される。
This polishing apparatus has a work holding table 11 for holding a work W, and the work W is mounted on the upper surface of the work holding table 11. The work W is sucked and held by negative pressure air supplied to a vacuum passage formed on the surface of the work holding table 11. A rotary shaft 12 is fixed to the work holding table 11, and the rotary shaft 12 is rotatably mounted on a vertically movable plate 14 provided on a base 13 so as to be vertically movable. A motor 15 is attached to the vertically moving plate 14, and a gear 16 fixed to a shaft of the motor 15 and a gear 17 fixed to the rotating shaft 12 mesh with each other, and the motor 15 serving as a work rotating unit rotates the work holding table 11. Is rotated, and the work W held by the work holding table 11 is driven to rotate about the work center axis Ow.

【0019】基台13の下方には下側基台18が連結ロ
ッド19により固定されており、下側基台18に取り付
けられた空気圧シリンダ21のロッド22によってワー
ク保持台11は上下動プレート14とともに上下動自在
となっている。上下動プレート14の上下動を案内する
ために、上下動プレート14に固定されたガイドロッド
23がそれぞれの基台13,18に固定されたガイドス
リーブ24内を貫通している。
Below the base 13, a lower base 18 is fixed by a connecting rod 19, and the work holding table 11 is moved by a rod 22 of a pneumatic cylinder 21 attached to the lower base 18 to move the vertical moving plate 14. It can move up and down together. In order to guide the vertical movement of the vertical movement plate 14, a guide rod 23 fixed to the vertical movement plate 14 passes through a guide sleeve 24 fixed to the bases 13, 18.

【0020】ワーク保持台11の上方には円板状の研磨
台25がワーク保持台11に対向して配置されており、
この研磨台25は回転シャフト26に固定され、図示し
ないモータを回転手段として回転駆動される。研磨台2
5には研磨リング27が固定されており、研磨リング2
7は回転シャフト26の回転中心である研磨中心軸Og
を中心に回転駆動される。回転シャフト26は研磨中心
軸Ogがワーク中心軸Owに対して角度θで傾斜してお
り、図示する場合にはこの角度θは2°に設定されてい
る。ただし、この角度θはワークWの外径などの条件に
より任意の角度に設定することができる。図1に示す研
磨装置にあっては、ワーク中心軸Owが垂直となり、こ
の中心軸に対して研磨中心軸Ogが角度θ傾斜している
が、研磨中心軸Ogを垂直として、これに対してワーク
中心軸Owを傾斜させるようにしても良い。
Above the work holding table 11, a disk-shaped polishing table 25 is disposed so as to face the work holding table 11.
The polishing table 25 is fixed to a rotating shaft 26, and is driven to rotate by a motor (not shown) as rotating means. Polishing table 2
5, a polishing ring 27 is fixed, and the polishing ring 2
7 is a polishing center axis Og which is a rotation center of the rotation shaft 26.
Is driven around. In the rotary shaft 26, the polishing center axis Og is inclined at an angle θ with respect to the workpiece center axis Ow, and in the illustrated case, the angle θ is set to 2 °. However, this angle θ can be set to an arbitrary angle depending on conditions such as the outer diameter of the work W. In the polishing apparatus shown in FIG. 1, the workpiece central axis Ow is perpendicular, and the polishing central axis Og is inclined at an angle θ with respect to this central axis. The work center axis Ow may be inclined.

【0021】ワークWの両面の外周部には、チャンファ
面C1,C2が形成されており、図1に示す研磨装置によ
ってそれぞれのチャンファ面が研磨加工される。この研
磨加工に際しては、ワーク保持台11が下降した状態の
もとで、ワークWがワーク保持台11の上に載置されて
吸着保持される。次いで、ワーク保持台11を空気圧シ
リンダ21によって上昇させると、ワークWの一方のチ
ャンファ面C1が研磨リング27に押し付けられる。こ
のように押し付けられた状態のもとで、チャンファ面C
1が研磨加工される。研磨加工時にはポリッシング液や
ラッピング液などの研磨液が研磨パッド32とワークW
との間に塗布される。他方のチャンファ面C2を研磨加
工する際には、ワークWは反転された後に同様の研磨が
行われる。
The chamfer surfaces C1 and C2 are formed on the outer peripheral portions of both surfaces of the work W, and the respective chamfer surfaces are polished by the polishing apparatus shown in FIG. At the time of this polishing, the work W is placed on the work holding table 11 and held by suction while the work holding table 11 is lowered. Next, when the work holding table 11 is raised by the pneumatic cylinder 21, one chamfer surface C1 of the work W is pressed against the polishing ring 27. Under the pressed state, the chamfer surface C
1 is polished. During polishing, a polishing liquid such as a polishing liquid or a lapping liquid is applied to the polishing pad 32 and the work W.
Is applied between When polishing the other chamfer surface C2, the same polishing is performed after the work W is turned over.

【0022】図2(A)はワークWが押し付けられた状
態における研磨リング27を示す断面図であり、図
(B)は同図(A)におけるB−B線に沿う断面図であ
る。
FIG. 2A is a cross-sectional view showing the polishing ring 27 in a state where the work W is pressed, and FIG. 2B is a cross-sectional view along the line BB in FIG. 2A.

【0023】研磨リング27は金属、樹脂などからなる
環状部材31とその表面に貼り付けられた研磨パッド3
2とからなり、研磨パッド32には小径部33と大径部
34との間に傾斜して形成された内周研磨面35が形成
されている。研磨パッド32は小径部33に連なり内周
研磨面35に対して折れ曲がって形成された退避部36
と、大径部34に連なり内周研磨面35に対して折れ曲
がって形成された退避部37とを有し、これらの退避部
36,37はワークWには接触しないようになってお
り、内周研磨面35のみによってワークWのチャンファ
面が研磨加工される。
The polishing ring 27 includes an annular member 31 made of metal, resin, or the like, and the polishing pad 3 attached to the surface thereof.
The polishing pad 32 has an inner peripheral polishing surface 35 formed between the small diameter portion 33 and the large diameter portion 34 so as to be inclined. The polishing pad 32 is connected to the small-diameter portion 33, and a retracting portion 36 formed by bending the inner peripheral polishing surface 35.
And a retracting portion 37 connected to the large-diameter portion 34 and bent with respect to the inner peripheral polishing surface 35. These retracting portions 36 and 37 do not contact the workpiece W. The chamfer surface of the work W is polished only by the peripheral polishing surface 35.

【0024】図1に示すように、ワークWの外径をD0
とすると、内周研磨面35の小径部33の内径D1はワ
ーク外径D0よりも小径に設定され、大径部34の内径
D2はワーク外径よりも大径に設定されており、内周研
磨面35の幅寸法はTとなっている。図2(A)に示す
ように、ワーク中心軸Owと研磨中心軸Ogとを相互に角
度θ傾斜させるとともに、ワークWのチャンファ面が内
周研磨面35を傾斜して横断するようにしてワークWを
研磨リング27に押し付けると、ワーク中心部W0から
相互にほぼ180°位相がずれた部分が小径部33と大
径部34からせり出すことになる。つまり、オーバーハ
ングすることになる。符号Waは小径部33からせり出
した部分であり、符号Wbは大径部34からせり出した
部分である。
As shown in FIG. 1, the outer diameter of the workpiece W is D0
Then, the inner diameter D1 of the small diameter portion 33 of the inner peripheral polishing surface 35 is set to be smaller than the work outer diameter D0, and the inner diameter D2 of the large diameter portion 34 is set to be larger than the work outer diameter. The width dimension of the polishing surface 35 is T. As shown in FIG. 2A, the workpiece central axis Ow and the polishing central axis Og are inclined at an angle θ to each other, and the workpiece W is inclined such that the chamfer surface of the workpiece W crosses the inner peripheral polishing surface 35. When W is pressed against the polishing ring 27, portions that are out of phase with each other by approximately 180 ° from the center portion W0 of the work protrude from the small-diameter portion 33 and the large-diameter portion. That is, it will overhang. Reference numeral Wa denotes a portion protruding from the small diameter portion 33, and reference numeral Wb denotes a portion protruding from the large diameter portion.

【0025】このように、チャンファ面が内周研磨面3
5を横断するようにワークWをオーバーハングさせて研
磨リング27に押し付けると、図2(B)に示すよう
に、内周研磨面35はチャンファ面の部分のみに接触
し、チャンファ面よりも径方向内側の部分にまで接触す
ることはなくなる。これにより、ワークWのチャンファ
面に隣接した表面に段差が発生することが防止され、高
品質の研磨面を加工することができる。特に、研磨リン
グ27を用いて多数のワークWを研磨加工しても、内周
研磨面35が全体的に均一に摩耗することになり、頻繁
に研磨リング27を交換する必要がなくなる。
As described above, the chamfer surface is the inner peripheral polishing surface 3
5, the workpiece W is overhanged and pressed against the polishing ring 27, and as shown in FIG. 2 (B), the inner peripheral polishing surface 35 contacts only the chamfer surface and has a larger diameter than the chamfer surface. It does not come into contact with the inner part in the direction. This prevents a step from being formed on the surface of the work W adjacent to the chamfer surface, and enables a high-quality polished surface to be processed. In particular, even if a large number of works W are polished by using the polishing ring 27, the inner peripheral polishing surface 35 is uniformly worn as a whole, so that it is not necessary to replace the polishing ring 27 frequently.

【0026】図3(A)は表裏反転させた状態における
研磨リング27の内周研磨面35に押し付けられたワー
クWを示す斜視図であり、ワークWのうちせり出した部
分以外が内周研磨面35に接触することになる。この内
周研磨面35は球面形状となっており、チャンファ面は
球面形状の内周研磨面35に接触して研磨加工される。
なお、内周研磨面35の形状としては球面形状に限られ
ず、円錐面形状などの他の凹面形状としても良い。
FIG. 3A is a perspective view showing the workpiece W pressed against the inner peripheral polishing surface 35 of the polishing ring 27 in a state where it is turned upside down. 35 will be contacted. The inner peripheral polishing surface 35 has a spherical shape, and the chamfer surface contacts the spherical inner peripheral polishing surface 35 and is polished.
The shape of the inner peripheral polishing surface 35 is not limited to a spherical shape, but may be another concave shape such as a conical shape.

【0027】研磨パッド32は内周研磨面35の部分の
みならず、退避部36,37の部分を含めたサイズとな
っている。これは、環状部材31に研磨パッド32を貼
り付け易くするためである。研磨加工を行うのは内周研
磨面35のみであるので、この部分のサイズの研磨パッ
ド32を環状部材31に貼り付けるようにしても良い。
The polishing pad 32 has a size including not only the inner peripheral polishing surface 35 but also the retracting portions 36 and 37. This is to make it easy to attach the polishing pad 32 to the annular member 31. Since only the inner peripheral polishing surface 35 is polished, the polishing pad 32 having the size of this portion may be attached to the annular member 31.

【0028】図3(B)は環状部材31の変形例を示す
斜視図である。複数の円弧状のセグメント31aを所定
の隙間を介して環状に配置して研磨台25に取り付ける
ことにより環状部材31が形成されており、それぞれの
セグメント31aには図示省略した研磨パッドが貼り付
けられることになる。このように、セグメント31aに
研磨パッド32を貼り付けるようにすると、内周研磨面
35はセグメント相互間の隙間の部分に対応した隙間を
有する研磨面となる。図3(B)に示す場合には8つの
セグメント31aを有しているが、この数は任意の数と
することができる。また、セグメント31a相互間の隙
間も任意の間隔とすることができる。
FIG. 3B is a perspective view showing a modification of the annular member 31. As shown in FIG. An annular member 31 is formed by arranging a plurality of arc-shaped segments 31a in a ring shape with a predetermined gap therebetween and attaching the same to the polishing table 25, and a polishing pad (not shown) is attached to each segment 31a. Will be. As described above, when the polishing pad 32 is attached to the segment 31a, the inner peripheral polishing surface 35 becomes a polishing surface having a gap corresponding to the gap between the segments. In the case shown in FIG. 3B, there are eight segments 31a, but this number can be any number. Further, the gap between the segments 31a can be set to an arbitrary interval.

【0029】図3(C)は研磨リング27の変形例を示
す断面図であり、内周研磨面35の幅方向両側に凹部3
8を形成することにより、内周研磨面35の幅方向両側
の部分を退避部としている。また、図3(C)に示す場
合には、研磨リング27をボルト39により研磨台25
に対して移動自在に取り付け、研磨リング27と研磨台
25との間にばね部材40を設けることにより、内周研
磨面35がチャンファ面全体的に均一に押し付け力を加
えるようにしている。なお、図3(A),(B)に示す
場合にもばね部材40を設けるようにしても良い。ま
た、環状部材31を含めた形状の研磨パッドを用いて研
磨リング27を構成するようにしても良い。
FIG. 3C is a cross-sectional view showing a modified example of the polishing ring 27. The concave portions 3 are formed on both sides in the width direction of the inner peripheral polishing surface 35.
By forming 8, portions on both sides in the width direction of the inner peripheral polishing surface 35 are used as retreating portions. Further, in the case shown in FIG.
And a spring member 40 is provided between the polishing ring 27 and the polishing table 25 so that the inner peripheral polishing surface 35 applies a pressing force uniformly over the entire chamfer surface. The spring member 40 may be provided also in the cases shown in FIGS. Further, the polishing ring 27 may be configured using a polishing pad having a shape including the annular member 31.

【0030】図4(A)は図1に示す研磨装置によって
研磨リング27とワークWとをそれぞれ回転させて研磨
加工している状態を示す。図示する場合には、相互に逆
方向に回転しているが、ワークWの外周と研磨リング2
7とに相対的にすべりが発生するのであれば、同一の方
向にそれぞれを回転させるようにしても良い。また、ワ
ークWと研磨リング27の回転は、前述のように両方を
回転させる場合に限られず、少なくともいずれか一方を
回転させてワークWと研磨リング27とを相対的に回転
させることによって研磨加工を行うことができる。
FIG. 4A shows a state in which the polishing apparatus shown in FIG. 1 rotates the polishing ring 27 and the workpiece W to perform polishing. In the case shown in the figure, the outer periphery of the workpiece W and the polishing ring 2 are rotated in opposite directions.
7 may be rotated in the same direction as long as a slip occurs relative to. Further, the rotation of the work W and the polishing ring 27 is not limited to the case where both are rotated as described above, and the polishing process is performed by rotating at least one of them to relatively rotate the work W and the polishing ring 27. It can be performed.

【0031】図4(B)〜(D)はそれぞれ図1および
図2に示した研磨リング27を用いてチャンファ面を研
磨加工する他の研磨加工方法を示す断面図である。図4
(B)に示す場合には、図4(A)と同様に研磨リング
27を回転させるのに対して、ワークWについては小径
部33と大径部34からせり出した部分つまりオーバー
ハング部Wa,Wbの位置が徐々に変化するように研磨リ
ング27の回転に追従させて割り出し回転する。このよ
うな加工方法でも、図4(A)に示す場合と同様にチャ
ンファ面を研磨加工することができる。
FIGS. 4B to 4D are cross-sectional views showing another polishing method for polishing the chamfer surface using the polishing ring 27 shown in FIGS. 1 and 2, respectively. FIG.
In the case shown in FIG. 4B, the polishing ring 27 is rotated in the same manner as in FIG. 4A, while the work W is protruded from the small-diameter portion 33 and the large-diameter portion 34, that is, the overhang portions Wa, The indexing rotation is performed by following the rotation of the polishing ring 27 so that the position of Wb gradually changes. Even with such a processing method, the chamfer surface can be polished similarly to the case shown in FIG.

【0032】図4(C)に示す場合には、研磨リング2
7を回転させることなく、ワークWのみをワーク中心軸
Owを中心に回転するようにしている。この場合には、
内周研磨面35の全体にワークWを接触させるために、
研磨リング27を研磨中心軸Ogが矢印で示す方向に首
振り運動するように、研磨リング27を揺動往復動して
いる。ただし、揺動往復動はワークWと研磨リング27
とを相対移動させれば良く、研磨リング27を揺動往復
動させることなく、ワーク中心軸Owを首振り運動させ
るようにワークを揺動往復動させるようにしても良い。
これらの揺動運動は、ワーク保持台を回転駆動する回転
シャフトや研磨台25を回転駆動する回転シャフトをモ
ータや空気圧シリンダなどを駆動源として揺動させるこ
とによりなされる。
In the case shown in FIG.
7 is rotated, and only the work W is rotated about the work center axis Ow. In this case,
In order to bring the work W into contact with the entire inner peripheral polishing surface 35,
The polishing ring 27 is reciprocated by swinging so that the polishing center axis Og swings in the direction indicated by the arrow. However, the swinging reciprocation is performed by the work W and the polishing ring 27.
May be relatively moved, and the work may be oscillated and reciprocated so as to swing the work center axis Ow without swinging and reciprocating the polishing ring 27.
These oscillating motions are performed by oscillating a rotating shaft that rotationally drives the work holding table or a rotating shaft that rotationally drives the polishing table 25 using a motor, a pneumatic cylinder, or the like as a driving source.

【0033】図4(A)〜(C)に示す研磨方法にあっ
ては、研磨加工の開始から終了まで常にワークWにオー
バーハング部Wa,Wbが維持されるようにして研磨加工
しているが、オーバーハングさせた状態でのオーバーハ
ング研磨加工と、オーバーハングさせない状態でチャン
ファ面全体を内周研磨面35に接触させて研磨加工を行
う全周研磨加工とを交互に行うようにしても良い。
In the polishing method shown in FIGS. 4A to 4C, the work W is polished so that the overhang portions Wa and Wb are always maintained from the start to the end of the polishing. However, it is also possible to alternately perform the overhang polishing in the overhanging state and the entire circumference polishing in which the entire chamfer surface is brought into contact with the inner peripheral polishing surface 35 without overhanging to perform the polishing. good.

【0034】図4(D)はこのように全周研磨加工とオ
ーバーハング研磨加工とを行う場合の研磨方法を示す図
であり、この場合にはワークWをワーク中心軸Ow周り
に回転し、研磨リング27を研磨中心軸Og周りに回転
するとともに、研磨リング27を研磨中心軸Ogが首振
り運動するように揺動往復動させている。図4(D)に
おいて実線で示すワークWはチャンファ面の全体が内周
研磨面35に接触した状態を示し、二点鎖線はワークW
のせり出し部つまりオーバーハング部Wa,Wbが前述し
た研磨方法と同様に内周研磨面35から離れた状態を示
す。
FIG. 4D is a diagram showing a polishing method in the case where the entire circumference polishing and the overhang polishing are performed as described above. In this case, the workpiece W is rotated around the workpiece central axis Ow, The polishing ring 27 is rotated around the polishing central axis Og, and the polishing ring 27 is reciprocated so that the polishing central axis Og swings. In FIG. 4D, a work W indicated by a solid line indicates a state in which the entire chamfer surface is in contact with the inner peripheral polishing surface 35, and a two-dot chain line indicates the work W
The protruding portions, that is, the overhang portions Wa and Wb are separated from the inner peripheral polishing surface 35 as in the above-described polishing method.

【0035】研磨リング27を揺動往復動することによ
って、全周研磨加工を所定の時間行った後にオーバーハ
ング研磨加工を行うようにしても良く、逆にオーバーハ
ング加工を先に行うようにしても良く、さらには両方の
研磨加工を複数回繰り返すようにしても良い。このよう
な研磨方法にあっては、ワークWを揺動往復動させるよ
うにしても良く、両方を揺動往復動させるようにしても
良く、さらには、図4(C)に示すように研磨リング2
7を回転させないようにしても良い。
By reciprocating the polishing ring 27, the overhang polishing may be performed after the entire circumference polishing is performed for a predetermined time, and conversely, the overhang processing may be performed first. Alternatively, both polishing processes may be repeated a plurality of times. In such a polishing method, the work W may be reciprocated in a swinging manner, or both may be reciprocated in a swinging manner. Further, as shown in FIG. Ring 2
7 may not be rotated.

【0036】図5は比較例としての研磨リング27aを
示す図であり、ワークWのチャンファ面の全体を常に研
磨パッド32aに接触させて研磨加工を行うようにする
と、ワークWに接触する研磨領域41が摩耗して、研磨
領域41よりも外側の部分の研磨パッド32aに段差が
生じ、その段差にワーク表面のうちチャンファ面の内側
42が接触してしまい、その接触部分が研磨加工されて
ワークWの表面に段差が発生することになる。
FIG. 5 is a view showing a polishing ring 27a as a comparative example. If the whole of the chamfer surface of the work W is constantly brought into contact with the polishing pad 32a to carry out the polishing, the polishing area which comes into contact with the work W will be described. 41 is worn, and a step is generated in a portion of the polishing pad 32a outside the polishing region 41, and the inside 42 of the chamfer surface of the work surface comes into contact with the step, and the contact portion is polished and the work is performed. A step occurs on the surface of W.

【0037】これに対して、本発明にあっては、球面形
状ないし円錐面形状の凹面状に形成された内周研磨面3
5を傾斜して横切るようにワークWのチャンファ面を内
周研磨面35に接触させるようにし、ワークWの一部が
内周研磨面35から離れてこれに接触しないようにオー
バーハングさせるようにし、ワークWと内周研磨面35
との相対的な滑りによって研磨加工を行うようにしたの
で、研磨パッドの段差によってチャンファ面の内側の部
分に研磨面が接触することを回避できる。これにより、
研磨パッド32を連続的に使用して多数のワークを研磨
加工しても、それぞれのワークを所望の精度で加工する
ことができる。
On the other hand, in the present invention, the inner peripheral polishing surface 3 formed in a spherical or conical concave shape is used.
5 so that the chamfer surface of the work W is brought into contact with the inner peripheral polishing surface 35 so as to cross the inclined surface 5, and a part of the work W is overhanged so as to be separated from the inner peripheral polishing surface 35 so as not to come into contact with the same. , Work W and inner peripheral polishing surface 35
Since the polishing process is performed by relative sliding with the polishing pad, it is possible to prevent the polishing surface from coming into contact with an inner portion of the chamfer surface due to a step of the polishing pad. This allows
Even if a large number of works are polished using the polishing pad 32 continuously, each work can be processed with desired accuracy.

【0038】本発明は前記実施の形態に限定されるもの
ではなく、その要旨を逸脱しない範囲で種々変更可能で
ある。たとえば、図示する研磨装置は研磨パッド32と
ワークWとの間に研磨液を介在させてワークのチャンフ
ァ面にラッピング加工やポリッシング加工を行うために
本発明を適用しているが、研磨リングを砥石としてワー
クを研削する場合にも適用することができる。図1に示
す研磨装置ではワーク保持台11を研磨台25に対して
下側に配置しているが、上下関係を逆にしても良い。
The present invention is not limited to the above embodiment, but can be variously modified without departing from the gist thereof. For example, the illustrated polishing apparatus applies the present invention to lap or polish a chamfer surface of a work by interposing a polishing liquid between the polishing pad 32 and the work W. It can also be applied to the case of grinding a workpiece. In the polishing apparatus shown in FIG. 1, the work holding table 11 is disposed below the polishing table 25, but the vertical relationship may be reversed.

【0039】[0039]

【発明の効果】本発明によれば、研磨リングに設けられ
た内周研磨面を横断するようにしてワークを研磨面に接
触させるので、研磨面はチャンファ面の内側の部分に接
触することがなく、ワークの表面に段差が形成されるこ
とが防止され、高品質のワークを歩留り良く加工するこ
とができる。また、研磨リングを交換することなく、多
数のワークを加工しても、研磨品質の低下はなく、研磨
加工能率を向上させることができる。
According to the present invention, since the workpiece is brought into contact with the polishing surface so as to cross the inner peripheral polishing surface provided on the polishing ring, the polishing surface can come into contact with the inner portion of the chamfer surface. In addition, a step is prevented from being formed on the surface of the work, and a high-quality work can be processed with high yield. Further, even if a large number of workpieces are processed without replacing the polishing ring, the polishing quality does not decrease and the polishing efficiency can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態であるワーク外周の研磨
装置を示す断面図である。
FIG. 1 is a cross-sectional view illustrating a polishing apparatus for an outer periphery of a work according to an embodiment of the present invention.

【図2】(A)はワークが押し付けられた状態における
研磨リングを示す断面図であり、(B)は同図(A)に
おけるB−B線に沿う断面図である。
FIG. 2A is a cross-sectional view showing a polishing ring in a state where a work is pressed, and FIG. 2B is a cross-sectional view taken along line BB in FIG. 2A.

【図3】(A)は研磨リングを表裏反転させてそれぞれ
のせり出した部分を誇張して示す斜視図であり、(B)
は環状部材の変形例を示す斜視図であり、(C)は研磨
リングの変形例を示す断面図である。
FIG. 3A is a perspective view in which the polishing ring is turned upside down and extruded portions are exaggerated, and FIG.
It is a perspective view which shows the modification of an annular member, (C) is sectional drawing which shows the modification of a grinding ring.

【図4】(A)は図1に示す研磨装置によりチャンファ
面を研磨加工している状態を示す断面図であり、(B)
〜(D)はそれぞれ他の加工方法により研磨加工してい
る状態を示す断面図である。
FIG. 4A is a cross-sectional view showing a state where the chamfer surface is being polished by the polishing apparatus shown in FIG. 1;
(D) is a cross-sectional view showing a state in which polishing is performed by another processing method.

【図5】比較例である研磨リングを示す断面図である。FIG. 5 is a sectional view showing a polishing ring as a comparative example.

【符号の説明】[Explanation of symbols]

11 ワーク保持台 12 回転シャフト 15 モータ 21 空気圧シリンダ 25 研磨台 26 回転シャフト 27 研磨リング 31 環状部材 32 研磨パッド 33 小径部 34 大径部 35 内周研磨面 36,37 退避部 38 凹部 W ワーク(半導体ウエハ) Wa せり出し部(オーバーハング部) Wb せり出し部(オーバーハング部) 11 Work Holder 12 Rotary Shaft 15 Motor 21 Pneumatic Cylinder 25 Polishing Table 26 Rotary Shaft 27 Polishing Ring 31 Annular Member 32 Polishing Pad 33 Small Diameter Portion 34 Large Diameter Portion 35 Inner Peripheral Polishing Surface 36, 37 Retreating Part 38 Recess W Work (Semiconductor) Wafer) Overhang (overhang) Wb Overhang (overhang)

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨方法であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングの前記内周研磨面に、前記チャンフ
ァ面のうち前記ワークの中心から相互にほぼ180°位
相がずれた部分が前記小径部と前記大径部からせり出す
ように研磨中心軸をワーク中心軸に対して傾斜させて前
記チャンファ面を押し付け、 前記ワークと前記研磨リングとを相対的に回転させるこ
とを特徴とするワーク外周の研磨方法。
1. A polishing method for an outer periphery of a workpiece, wherein a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece is polished, the inner peripheral polishing being formed to be inclined between a small diameter portion and a large diameter portion. On the inner peripheral polishing surface of the polishing ring having a surface, the polishing center axis is set so that a portion of the chamfer surface, which is substantially 180 ° out of phase from the center of the work, protrudes from the small diameter portion and the large diameter portion. A method for polishing the outer periphery of a work, wherein the work and the polishing ring are relatively rotated by pressing the chamfer surface while being inclined with respect to the center axis of the work.
【請求項2】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨方法であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングを研磨中心軸周りに回転し、 前記チャンファ面のうち前記ワークの中心から相互にほ
ぼ180°位相がずれた部分が前記小径部と前記大径部
からせり出すようにワーク中心軸を前記研磨中心軸に対
して傾斜させた状態のもとで、前記チャンファ面を前記
内周研磨面に押し付けながら前記ワークを回転すること
を特徴とするワーク外周の研磨方法。
2. A polishing method for polishing an outer periphery of a workpiece, which is configured to polish a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, wherein an inner peripheral polishing formed to be inclined between a small diameter portion and a large diameter portion. A grinding ring having a surface is rotated about a grinding central axis, and a work center axis is formed such that a portion of the chamfer surface, which is out of phase with the center of the work by approximately 180 °, protrudes from the small diameter portion and the large diameter portion. Polishing the outer periphery of the workpiece while pressing the chamfer surface against the inner peripheral polishing surface in a state where the workpiece is inclined with respect to the polishing center axis.
【請求項3】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨方法であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングの前記内周研磨面に、前記チャンフ
ァ面のうち前記ワークの中心から相互にほぼ180°位
相がずれた部分が前記小径部と前記大径部からせり出す
ように研磨中心軸をワーク中心軸に対して傾斜させて前
記チャンファ面を押し付け、 前記ワークと前記研磨リングとを相対的に回転し、前記
研磨中心軸と前記ワーク中心軸とが相対的に首振り運動
するように、前記研磨リングと前記ワークの少なくとも
いずれか一方を揺動往復動することを特徴とするワーク
外周の研磨方法。
3. A polishing method of a workpiece outer periphery for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, wherein an inner peripheral polishing formed to be inclined between a small diameter portion and a large diameter portion. On the inner peripheral polishing surface of the polishing ring having a surface, the polishing center axis is set so that a portion of the chamfer surface, which is substantially 180 ° out of phase from the center of the work, protrudes from the small diameter portion and the large diameter portion. Pressing the chamfer surface inclining with respect to the work center axis, relatively rotating the work and the polishing ring, so that the polishing center axis and the work center axis relatively swing motion. A method for polishing the outer periphery of a work, characterized in that at least one of the polishing ring and the work is reciprocally oscillated.
【請求項4】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨方法であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングの前記内周研磨面に、研磨中心軸を
ワーク中心軸に対して傾斜させて、前記チャンファ面を
押し付けた状態のもとで、前記ワークと前記研磨リング
とを相対的に回転させ、 前記チャンファ面全体が前記内周研磨面に接触した状態
での全周研磨加工と、 前記チャンファ面のうち前記ワークの中心から相互にほ
ぼ180°位相がずれた部分を前記小径部と前記大径部
からせり出させた状態でのオーバーハング研磨加工とを
行うことを特徴とするワーク外周の研磨方法。
4. A polishing method of a workpiece outer periphery for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped work, wherein an inner peripheral polishing formed to be inclined between a small diameter portion and a large diameter portion. On the inner peripheral polishing surface of the polishing ring having a surface, the polishing center axis is inclined with respect to the work center axis, and under the state where the chamfer surface is pressed, the work and the polishing ring are relatively moved. Rotating, the entire circumference polishing process in a state where the entire chamfer surface is in contact with the inner peripheral polishing surface, and the portion of the chamfer surface that is substantially 180 ° out of phase with respect to the center of the work with the small diameter portion. A method of polishing the outer periphery of a work, comprising performing overhang polishing in a state of protruding from the large diameter portion.
【請求項5】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨装置であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングと、 前記チャンファ面のうち前記ワークの中心から相互にほ
ぼ180°位相がずれた部分が前記小径部と前記大径部
からせり出すようにワーク中心軸を前記研磨中心軸に対
して傾斜させて前記ワークを保持するワーク保持具と、 前記チャンファ面を前記内周研磨面に押し付けながら前
記ワークと前記研磨リングとを相対的に回転する回転手
段とを有することを特徴とするワーク外周の研磨装置。
5. An apparatus for polishing an outer periphery of a workpiece for polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, the inner peripheral polishing being formed to be inclined between a small diameter portion and a large diameter portion. A polishing ring having a surface, and a workpiece central axis with respect to the polishing central axis such that a portion of the chamfer surface, which is substantially 180 ° out of phase from the center of the workpiece, protrudes from the small diameter portion and the large diameter portion. A workpiece holder for holding the workpiece by tilting the workpiece, and rotating means for relatively rotating the workpiece and the polishing ring while pressing the chamfer surface against the inner peripheral polishing surface. Peripheral polishing device.
【請求項6】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨装置であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングと、 前記研磨リングを回転する研磨リング回転手段と、 前記チャンファ面のうち前記ワークの中心から相互にほ
ぼ180°位相がずれた部分が前記小径部と前記大径部
からせり出すようにワーク中心軸を前記研磨中心軸に対
して傾斜させて前記ワークを保持するワーク保持具と、 前記チャンファ面を前記内周研磨面に押し付けながら前
記ワークを回転するワーク回転手段とを有することを特
徴とするワーク外周の研磨装置。
6. A polishing apparatus for polishing an outer periphery of a workpiece formed by polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, wherein an inner peripheral polishing is formed so as to be inclined between a small diameter portion and a large diameter portion. A polishing ring having a surface; a polishing ring rotating means for rotating the polishing ring; and a portion of the chamfer surface, which is substantially 180 ° out of phase with respect to the center of the work, protrudes from the small diameter portion and the large diameter portion. A work holder for holding the work by tilting the work center axis with respect to the polishing center axis, and a work rotating means for rotating the work while pressing the chamfer surface against the inner peripheral polishing surface. A polishing device for the outer periphery of a work, characterized by the following.
【請求項7】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨装置であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングと、 前記チャンファ面のうち前記ワークの中心から相互にほ
ぼ180°位相がずれた部分が前記小径部と前記大径部
からせり出すようにワーク中心軸を前記研磨中心軸に対
して傾斜させて前記ワークを保持するワーク保持具と、 前記チャンファ面を前記内周研磨面に押し付けながら前
記ワークと前記研磨リングとを相対的に回転する回転手
段と、 前記研磨中心軸と前記ワーク中心軸とが相対的に首振り
運動するように、前記研磨リングと前記ワークの少なく
ともいずれか一方を揺動往復動する揺動手段とを有する
ことを特徴とするワーク外周の研磨装置。
7. A polishing apparatus for polishing an outer periphery of a workpiece formed by polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, wherein an inner peripheral polishing formed to be inclined between a small diameter portion and a large diameter portion. A polishing ring having a surface, and a workpiece central axis with respect to the polishing central axis such that a portion of the chamfer surface, which is substantially 180 ° out of phase from the center of the workpiece, protrudes from the small diameter portion and the large diameter portion. A workpiece holder for holding the workpiece by tilting the workpiece, rotating means for relatively rotating the workpiece and the polishing ring while pressing the chamfer surface against the inner peripheral polishing surface, the polishing center axis and the workpiece A polishing means for oscillating at least one of the polishing ring and the work so as to reciprocate at least one of the work such that the center axis relatively swings with respect to the center axis. .
【請求項8】 円板状ワークの外周部に形成されたチャ
ンファ面を研磨加工するワーク外周の研磨装置であっ
て、 小径部と大径部との間に傾斜して形成された内周研磨面
を有する研磨リングと、 研磨中心軸をワーク中心軸に対して傾斜させて前記チャ
ンファ面を前記内周研磨面に押し付けた状態のもとで前
記ワークを保持するワーク保持具と、 前記ワークと前記研磨リングとを相対的に回転する回転
手段と、 前記研磨中心軸または前記ワーク中心軸を揺動往復動
し、前記チャンファ面全体が前記内周研磨面に接触した
状態での全周研磨加工と、前記チャンファ面のうち前記
ワークの中心から相互にほぼ180°位相がずれた部分
を前記小径部と前記大径部からせり出させた状態でのオ
ーバーハング研磨加工とを行う揺動手段とを有すること
を特徴とするワーク外周の研磨装置。
8. A polishing apparatus for polishing an outer periphery of a workpiece formed by polishing a chamfer surface formed on an outer peripheral portion of a disk-shaped workpiece, wherein an inner peripheral polishing formed to be inclined between a small diameter portion and a large diameter portion. A polishing ring having a surface, a work holder for holding the work in a state in which a polishing center axis is inclined with respect to the work center axis and the chamfer surface is pressed against the inner peripheral polishing surface; and Rotating means for relatively rotating the polishing ring; and reciprocating swinging movement of the polishing center axis or the work center axis so that the entire periphery of the chamfer surface is in contact with the inner peripheral polishing surface. And a swinging means for performing an overhang polishing process in a state in which a portion of the chamfer surface, which is substantially 180 ° out of phase from the center of the work, protrudes from the small-diameter portion and the large-diameter portion. To have Characteristic polishing equipment for the outer periphery of the work.
JP2000328139A 2000-10-27 2000-10-27 Polishing method and polishing apparatus for outer periphery of work Expired - Lifetime JP3445237B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010082754A (en) * 2008-09-30 2010-04-15 Speedfam Co Ltd Polishing pad for wafer notch part
WO2013168444A1 (en) * 2012-05-07 2013-11-14 信越半導体株式会社 Circumferential polishing device for disc-shaped workpieces
CN104985502A (en) * 2015-06-24 2015-10-21 湖州维峰磁性材料有限公司 Magnet ring chamfering device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010082754A (en) * 2008-09-30 2010-04-15 Speedfam Co Ltd Polishing pad for wafer notch part
WO2013168444A1 (en) * 2012-05-07 2013-11-14 信越半導体株式会社 Circumferential polishing device for disc-shaped workpieces
KR20150006844A (en) * 2012-05-07 2015-01-19 신에쯔 한도타이 가부시키가이샤 Circumferential polishing device for disc-shaped workpieces
JPWO2013168444A1 (en) * 2012-05-07 2016-01-07 信越半導体株式会社 Peripheral polishing machine for disk workpiece
US9358655B2 (en) 2012-05-07 2016-06-07 Shin-Etsu Handotai Co., Ltd. Outer periphery polishing apparatus for disc-shaped workpiece
KR101985219B1 (en) 2012-05-07 2019-06-03 신에쯔 한도타이 가부시키가이샤 Circumferential polishing device for disc-shaped workpieces
CN104985502A (en) * 2015-06-24 2015-10-21 湖州维峰磁性材料有限公司 Magnet ring chamfering device

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