JP2002118118A5 - - Google Patents
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- Publication number
- JP2002118118A5 JP2002118118A5 JP2001209527A JP2001209527A JP2002118118A5 JP 2002118118 A5 JP2002118118 A5 JP 2002118118A5 JP 2001209527 A JP2001209527 A JP 2001209527A JP 2001209527 A JP2001209527 A JP 2001209527A JP 2002118118 A5 JP2002118118 A5 JP 2002118118A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001209527A JP2002118118A (ja) | 2000-07-10 | 2001-07-10 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000209136 | 2000-07-10 | ||
| JP2000-209136 | 2000-07-10 | ||
| JP2001209527A JP2002118118A (ja) | 2000-07-10 | 2001-07-10 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011246371A Division JP2012089854A (ja) | 2000-07-10 | 2011-11-10 | 半導体装置及び半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002118118A JP2002118118A (ja) | 2002-04-19 |
| JP2002118118A5 true JP2002118118A5 (enExample) | 2008-08-07 |
Family
ID=26595755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001209527A Withdrawn JP2002118118A (ja) | 2000-07-10 | 2001-07-10 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002118118A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI272556B (en) | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
| WO2004086475A1 (ja) * | 2003-03-26 | 2004-10-07 | Hitachi Kokusai Electric Inc. | 基板処理装置及び半導体デバイスの製造方法 |
| JP2005244204A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 電子機器、半導体装置およびその作製方法 |
| US8476744B2 (en) * | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
| KR102606651B1 (ko) * | 2019-11-01 | 2023-11-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정화에 대한 내성이 있는 비정질 실리콘-기반 막들 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3387510B2 (ja) * | 1991-03-15 | 2003-03-17 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JPH07297403A (ja) * | 1994-04-20 | 1995-11-10 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| JPH0869967A (ja) * | 1994-08-26 | 1996-03-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JPH09148322A (ja) * | 1995-11-22 | 1997-06-06 | Sharp Corp | シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置 |
| JP4450900B2 (ja) * | 1998-10-06 | 2010-04-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2001
- 2001-07-10 JP JP2001209527A patent/JP2002118118A/ja not_active Withdrawn