JP2002093758A - Polishing system and polishing pad for use therein and polishing method - Google Patents
Polishing system and polishing pad for use therein and polishing methodInfo
- Publication number
- JP2002093758A JP2002093758A JP2000285401A JP2000285401A JP2002093758A JP 2002093758 A JP2002093758 A JP 2002093758A JP 2000285401 A JP2000285401 A JP 2000285401A JP 2000285401 A JP2000285401 A JP 2000285401A JP 2002093758 A JP2002093758 A JP 2002093758A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor substrate
- polishing pad
- polished
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、半導体製造装置に
係り、特に半導体基板上に形成された被研磨物を研磨す
る研磨装置、研磨パッド、及び研磨方法に関する。The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a polishing apparatus, a polishing pad, and a polishing method for polishing an object to be polished formed on a semiconductor substrate.
【０００２】[0002]
【従来の技術】半導体基板上に堆積した金属膜（Ｃｕ，
Ｗ，Ａｌ等）を平坦化し、例えばＣｕダマシン等の金属
埋め込み配線を形成する際に、ＣＭＰ（Chemical Mecha
nicalPolishing：化学的機械的研磨）が用いられてい
る。そして、配線幅の異なる上記金属埋め込み配線を同
時に形成する際、幅の異なる複数の溝に金属膜を堆積さ
せると、金属膜の表面に凹凸（段差）が形成されること
が知られている。2. Description of the Related Art Metal films (Cu,
When flattening W, Al, etc.) and forming a metal embedded wiring such as Cu damascene, the CMP (Chemical Mecha
nicalPolishing: chemical mechanical polishing). It is known that, when simultaneously forming the buried metal wires having different wiring widths, if a metal film is deposited in a plurality of grooves having different widths, irregularities (steps) are formed on the surface of the metal film.
【０００３】従来、この金属膜の段差を緩和するため
に、研磨パッドの硬さや、研磨パッドの回転速度を制御
して、研磨（化学的機械的研磨）を行っていた。Conventionally, in order to reduce the step of the metal film, polishing (chemical mechanical polishing) has been performed by controlling the hardness of the polishing pad and the rotation speed of the polishing pad.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記従来の研
磨では、優れた段差緩和性が得られなかった。すなわ
ち、研磨パッドのたわみ等によって、金属配線の中央部
がその周辺よりも多く削れてしまうディッシングや、金
属配線全体の膜減りであるエロージョンが起こってしま
う問題があった。この問題を解決するため、従来は金属
膜の膜厚を厚くしていたが、研磨量が多くなり、スルー
プットが低くなってしまう問題があった。However, the above-mentioned conventional polishing has not been able to obtain an excellent step-relaxing property. That is, there is a problem that dishing in which the central portion of the metal wiring is shaved more than the periphery thereof due to bending of the polishing pad and erosion which is a reduction in the film thickness of the entire metal wiring occur. In order to solve this problem, conventionally, the thickness of the metal film is increased, but there is a problem that the polishing amount increases and the throughput decreases.
【０００５】本発明は、上記従来の課題を解決するため
になされたもので、段差緩和性の高い研磨装置、研磨パ
ッド、研磨方法を提供することを目的とする。[0005] The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a polishing apparatus, a polishing pad, and a polishing method having a high step-reducing property.
【０００６】[0006]
【課題を解決する為の手段】請求項１の発明に係る研磨
装置は、部分的に電気伝導率が変動し得る研磨パッド
と、半導体基板を保持するとともに、この半導体基板を
前記研磨パッドの表面に押し付ける保持板と、前記半導
体基板と前記研磨パッドの間に、電解液、砥粒、及び薬
液成分を含有する研磨液を供給する研磨液供給部と、前
記研磨パッドの裏面に設けられた電極と、前記半導体基
板と、前記電極との間に電圧を印加する電圧印加部と、
を備えることを特徴とするものである。According to a first aspect of the present invention, there is provided a polishing apparatus comprising: a polishing pad capable of partially changing an electric conductivity; a semiconductor substrate being held; and the semiconductor substrate being placed on the surface of the polishing pad. And a polishing liquid supply unit for supplying a polishing liquid containing an electrolytic solution, abrasive grains, and a chemical solution component between the semiconductor substrate and the polishing pad, and an electrode provided on the back surface of the polishing pad. And a voltage applying unit that applies a voltage between the semiconductor substrate and the electrode;
It is characterized by having.
【０００７】請求項２の発明に係る研磨装置は、請求項
１に記載の研磨装置において、前記研磨パッドは、複数
の導電粒子を含有することを特徴とするものである。A polishing apparatus according to a second aspect of the present invention is the polishing apparatus according to the first aspect, wherein the polishing pad contains a plurality of conductive particles.
【０００８】請求項３の発明に係る研磨装置は、請求項
２に記載の研磨装置において、前記導電粒子は、金属膜
で被覆された球状のシリコンであることを特徴とするも
のである。A polishing apparatus according to a third aspect of the present invention is the polishing apparatus according to the second aspect, wherein the conductive particles are spherical silicon covered with a metal film.
【０００９】請求項４の発明に係る研磨装置は、請求項
２に記載の研磨装置において、前記研磨パッドの材料
は、前記半導体基板の上に形成された被研磨物の凹凸に
応じて変形する弾性材であることを特徴とするものであ
る。A polishing apparatus according to a fourth aspect of the present invention is the polishing apparatus according to the second aspect, wherein the material of the polishing pad is deformed in accordance with irregularities of an object to be polished formed on the semiconductor substrate. It is characterized by being an elastic material.
【００１０】請求項５の発明に係る研磨装置は、請求項
４に記載の研磨装置において、前記研磨パッドは、変形
部分の抵抗値が変動するとともに、その変形部分に流れ
る電流値も変動することを特徴とするものである。[0010] In a polishing apparatus according to a fifth aspect of the present invention, in the polishing apparatus according to the fourth aspect, the polishing pad varies a resistance value of a deformed portion and a current value flowing in the deformed portion. It is characterized by the following.
【００１１】請求項６の発明に係る研磨装置は、請求項
５に記載の研磨装置において、前記研磨パッドは、前記
被研磨物の凸部に対応して圧縮変形した部分の抵抗値が
低くなり、その部分に流れる電流値が高くなることを特
徴とするものである。In a polishing apparatus according to a sixth aspect of the present invention, in the polishing apparatus according to the fifth aspect, the resistance value of the polishing pad, which is compressed and deformed corresponding to the convex portion of the object to be polished, is reduced. , Characterized in that the value of the current flowing through that portion is increased.
【００１２】請求項７の発明に係る研磨装置は、請求項
１に記載の研磨装置において、前記電圧印加部は、０．
１〜１０Ｖの電圧を印加することを特徴とするものであ
る。In a polishing apparatus according to a seventh aspect of the present invention, in the polishing apparatus according to the first aspect, the voltage application section is provided with a 0.1.
It is characterized in that a voltage of 1 to 10 V is applied.
【００１３】請求項８の発明に係る研磨装置は、請求項
１に記載の研磨装置において、前記研磨液供給部は、前
記電解液として亜硫酸または硫酸銅水溶液を含有する研
磨液を供給することを特徴とするものである。In a polishing apparatus according to an eighth aspect of the present invention, in the polishing apparatus according to the first aspect, the polishing liquid supply section supplies a polishing liquid containing an aqueous solution of sulfurous acid or copper sulfate as the electrolytic solution. It is a feature.
【００１４】請求項９の発明に係る研磨装置は、請求項
１に記載の研磨装置において、前記研磨液供給部により
供給される研磨液は、砥粒を含有しないことを特徴とす
るものである。A polishing apparatus according to a ninth aspect of the present invention is the polishing apparatus according to the first aspect, wherein the polishing liquid supplied by the polishing liquid supply section does not contain abrasive grains. .
【００１５】請求項１０の発明に係る研磨パッドは、請
求項１から９の何れかに記載の研磨装置で用いられるこ
とを特徴とするものである。A polishing pad according to a tenth aspect of the present invention is used in the polishing apparatus according to any one of the first to ninth aspects.
【００１６】請求項１１の発明に係る研磨方法は、部分
的に電気伝導率が変動し得る研磨パッドの表面に対して
半導体基板を押し付けながら、電解液、砥粒、及び薬液
成分を含有する研磨液を半導体基板と研磨パッドの間に
供給し、半導体基板上に形成された被研磨物の化学的機
械的研磨を行うとともに、前記半導体基板と、前記研磨
パッドの裏面に設けられた電極との間に電圧を印加する
ことにより、前記被研磨物の電解研磨を行うことを特徴
とするものである。A polishing method according to an eleventh aspect of the present invention is directed to a polishing method containing an electrolytic solution, abrasive grains, and a chemical solution component while pressing a semiconductor substrate against a surface of a polishing pad in which electric conductivity can partially vary. A liquid is supplied between the semiconductor substrate and the polishing pad to perform chemical mechanical polishing of the object to be polished formed on the semiconductor substrate, and the semiconductor substrate and the electrode provided on the back surface of the polishing pad. Electropolishing of the object to be polished is performed by applying a voltage therebetween.
【００１７】請求項１２の発明に係る研磨方法は、部分
的に電気伝導率が変動し得る研磨パッドの表面に対して
半導体基板を押し付けながら、電解液及び薬液成分を含
有する研磨液を半導体基板と研磨パッドの間に供給し、
半導体基板上に形成された被研磨物の化学的研磨を行う
とともに、前記半導体基板と、前記研磨パッドの裏面に
設けられた電極との間に電圧を印加することにより、前
記被研磨物の電解研磨を行うことを特徴とするものであ
る。In a polishing method according to a twelfth aspect of the present invention, a polishing liquid containing an electrolytic solution and a chemical component is applied to a semiconductor substrate while pressing the semiconductor substrate against the surface of a polishing pad in which electric conductivity can partially vary. And between the polishing pad and
By subjecting the object to be polished formed on the semiconductor substrate to chemical polishing and applying a voltage between the semiconductor substrate and an electrode provided on the back surface of the polishing pad, the object to be polished is electrolyzed. It is characterized by performing polishing.
【００１８】請求項１３の発明に係る研磨方法は、請求
項１１または１２に記載の研磨方法において、前記被研
磨物の凹凸に応じて前記研磨パッドが変形すると、この
変形部分に対応する被研磨物の電解研磨レートが変動す
ることを特徴とするものである。A polishing method according to a thirteenth aspect of the present invention is the polishing method according to the eleventh or twelfth aspect, wherein the polishing pad corresponding to the deformed portion is deformed when the polishing pad is deformed in accordance with the unevenness of the object to be polished. It is characterized in that the electropolishing rate of the material varies.
【００１９】請求項１４の発明に係る研磨方法は、請求
項１３に記載の研磨方法において、前記研磨パッドの圧
縮変形部分に対応する被研磨物の電解研磨レートが高く
なることを特徴とするものである。A polishing method according to a fourteenth aspect of the present invention is the polishing method according to the thirteenth aspect, wherein an electropolishing rate of an object to be polished corresponding to a compressively deformed portion of the polishing pad is increased. It is.
【００２０】請求項１５の発明に係る研磨方法は、請求
項１１または１２に記載の研磨方法において、前記半導
体基板と、前記研磨パッドの裏面に設けられた電極との
間に、０．１〜１０Ｖの電圧を印加して電解研磨を行う
ことを特徴とするものである。A polishing method according to a fifteenth aspect of the present invention is the polishing method according to the eleventh or twelfth aspect, wherein the distance between the semiconductor substrate and the electrode provided on the back surface of the polishing pad is 0.1 to 0.1 mm. Electropolishing is performed by applying a voltage of 10V.
【００２１】請求項１６の発明に係る研磨方法は、請求
項１１または１２に記載の研磨方法において、前記半導
体基板と研磨パッドの間に、前記電解液として亜硫酸ま
たは硫酸銅水溶液を含有する研磨液を供給することを特
徴とするものである。A polishing method according to a sixteenth aspect of the present invention is the polishing method according to the eleventh or twelfth aspect, wherein the polishing liquid contains an aqueous solution of sulfurous acid or copper sulfate as the electrolytic solution between the semiconductor substrate and the polishing pad. Is supplied.
【００２２】請求項１７の発明に係る研磨方法は、請求
項１１に記載の研磨方法と、請求項１２に記載の研磨方
法を組み合わせて行うことにより半導体基板上に形成さ
れた被研磨物を研磨することを特徴とするものである。According to a seventeenth aspect of the present invention, there is provided a polishing method for polishing an object to be polished formed on a semiconductor substrate by performing a combination of the polishing method according to the eleventh aspect and the polishing method according to the twelfth aspect. It is characterized by doing.
【００２３】[0023]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態について説明する。図中、同一または相当する
部分には同一の符号を付してその説明を簡略化ないし省
略することがある。Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or corresponding portions have the same reference characters allotted, and description thereof may be simplified or omitted.
【００２４】実施の形態１．図１は、本発明の実施の形
態１による研磨装置及び研磨方法を説明するための図で
ある。図２は、図１に示した研磨パッドの近傍を拡大し
た断面図である。図１において、参照符号１は研磨パッ
ド、２は保持板、３は半導体基板、３１は半導体基板３
上に形成された被研磨物、４は研磨液供給部、４１は研
磨液供給部４により供給された研磨液を示している。ま
た、５は電極としての導電基板、６は電圧印加部、７は
リテーナーを示している。Embodiment 1 FIG. 1 is a diagram for explaining a polishing apparatus and a polishing method according to a first embodiment of the present invention. FIG. 2 is an enlarged sectional view of the vicinity of the polishing pad shown in FIG. In FIG. 1, reference numeral 1 denotes a polishing pad, 2 denotes a holding plate, 3 denotes a semiconductor substrate, and 31 denotes a semiconductor substrate.
The object to be polished 4 formed above is a polishing liquid supply section, and 41 is a polishing liquid supplied by the polishing liquid supply section 4. Reference numeral 5 denotes a conductive substrate as an electrode, 6 denotes a voltage application unit, and 7 denotes a retainer.
【００２５】研磨パッド１は、図２に示すように、複数
の導電粒子１１を含有している。このため、研磨パッド
１は、導電性を有し、かつ部分的に電気伝導率が変動し
得る（後述）。ここで、上記導電粒子１１は、例えばＡ
ｕ，Ａｇ，Ｐｔ等からなる金属膜によって被覆された球
状のシリコン（シリコン球）である。また、研磨パッド
１は、電解研磨（後述）が可能である程度に、研磨パッ
ド１の全体に上記導電粒子１１を含有する。すなわち、
研磨パッド１全体が導電性を有している。また、研磨パ
ッド１は、たわみの無い状態で、できるだけ均一な電気
伝導率または抵抗値を有することが望ましい。また、研
磨パッド１は、図示しない回転機構により水平方向に回
転する。The polishing pad 1 contains a plurality of conductive particles 11 as shown in FIG. For this reason, the polishing pad 1 has conductivity and the electrical conductivity may partially fluctuate (described later). Here, the conductive particles 11 are, for example, A
It is a spherical silicon (silicon sphere) covered with a metal film made of u, Ag, Pt or the like. The polishing pad 1 contains the conductive particles 11 in the entire polishing pad 1 to the extent that electrolytic polishing (described later) is possible. That is,
The entire polishing pad 1 has conductivity. Further, it is desirable that the polishing pad 1 has an electric conductivity or a resistance value which is as uniform as possible in a state without bending. The polishing pad 1 is rotated in a horizontal direction by a rotation mechanism (not shown).
【００２６】また、研磨パッド１は、ウレタン樹脂等の
弾性材により形成されている。このため、保持板２によ
って半導体基板３が研磨パッド１に押し付けられると、
図２に示すように、半導体基板３上に形成された被研磨
物３１の凹凸に応じて研磨パッド１が変形する。例え
ば、被研磨物３１の凸部３１ａに対応する部分の研磨パ
ッド１は圧縮変形する（図２参照）。そして、この圧縮
部分において、上記導電粒子１１同士の接触面積が広く
なり、電気抵抗値が低くなる。すなわち、研磨パッド１
内に、低抵抗領域Ａが形成される。従って、電圧印加部
６によって電圧が印加されると、低抵抗領域Ａに流れる
電流値が高くなり、凸部３１ａの電解研磨レートが高く
なる（後述）。また、凸部３１ａが研磨されるにつれ、
研磨パッド１の圧縮変形が少なくなるため、電解研磨レ
ートが徐々に低くなる。The polishing pad 1 is made of an elastic material such as urethane resin. For this reason, when the semiconductor substrate 3 is pressed against the polishing pad 1 by the holding plate 2,
As shown in FIG. 2, the polishing pad 1 is deformed according to the unevenness of the object to be polished 31 formed on the semiconductor substrate 3. For example, the portion of the polishing pad 1 corresponding to the convex portion 31a of the workpiece 31 is compressed and deformed (see FIG. 2). Then, in the compressed portion, the contact area between the conductive particles 11 increases, and the electric resistance value decreases. That is, the polishing pad 1
Inside, a low resistance region A is formed. Therefore, when a voltage is applied by the voltage applying unit 6, the value of the current flowing in the low resistance region A increases, and the electrolytic polishing rate of the projection 31a increases (described later). Further, as the convex portion 31a is polished,
Since the compressive deformation of the polishing pad 1 is reduced, the electrolytic polishing rate is gradually reduced.
【００２７】一方、被研磨物３１の凹部３１ｂに対応す
る部分の研磨パッド１は圧縮変形しない。この場合、上
記圧縮部分（低抵抗領域Ａ）と比較して、導電粒子１１
同士の接触面積は小さくなり、電気抵抗値が高くなる。
すなわち、研磨パッド１内に、高抵抗領域Ｂが形成され
る。従って、電圧印加部６によって電圧が印加される
と、高抵抗領域Ｂに流れる電流値が低くなり、電解研磨
レートが低くなる（後述）。On the other hand, the portion of the polishing pad 1 corresponding to the concave portion 31b of the workpiece 31 is not compressed and deformed. In this case, compared to the compressed portion (low-resistance region A), the conductive particles 11
The contact area between them becomes smaller, and the electric resistance value becomes higher.
That is, the high resistance region B is formed in the polishing pad 1. Therefore, when a voltage is applied by the voltage applying unit 6, the value of the current flowing through the high resistance region B decreases, and the electrolytic polishing rate decreases (described later).
【００２８】保持板２は、半導体基板３を真空吸着等に
より保持するとともに、この半導体基板３を研磨パッド
１の表面１ａに所定の圧力（図１中の矢印に対応する）
で押し付けるためのバックプレートである。また、保持
板２は、図示しない回転機構により水平方向に回転す
る。The holding plate 2 holds the semiconductor substrate 3 by vacuum suction or the like and places the semiconductor substrate 3 on the surface 1a of the polishing pad 1 at a predetermined pressure (corresponding to the arrow in FIG. 1).
It is a back plate for pressing with. The holding plate 2 is rotated in a horizontal direction by a rotation mechanism (not shown).
【００２９】半導体基板３は、例えば、シリコン基板、
石英基板、セラミックス基板等の基板である。この半導
体基板３の上には、被研磨物３１としての金属膜、バリ
アメタル層、接着層、または絶縁膜等が形成されてい
る。なお、本発明の実施の形態においては、被研磨物３
１が金属膜である場合について説明する。また、この金
属膜３１は、例えば、Ｃｕ（銅）、Ｗ（タングステ
ン）、Ａｌ（アルミニウム）、或いはその合金等からな
る。また、図２に示すように、金属膜３１の表面には、
凹凸（凸部３１ａ及び凹部３１ｂ）すなわち段差が形成
される。また、半導体基板３は、保持板２を介して接地
されている。The semiconductor substrate 3 is, for example, a silicon substrate,
Substrates such as quartz substrates and ceramic substrates. On the semiconductor substrate 3, a metal film, a barrier metal layer, an adhesive layer, an insulating film, or the like as the object to be polished 31 is formed. In the embodiment of the present invention, the object to be polished 3
The case where 1 is a metal film will be described. The metal film 31 is made of, for example, Cu (copper), W (tungsten), Al (aluminum), or an alloy thereof. As shown in FIG. 2, the surface of the metal film 31
Asperities (projections 31a and depressions 31b), that is, steps are formed. The semiconductor substrate 3 is grounded via the holding plate 2.
【００３０】研磨液供給部４は、研磨液４１を、研磨パ
ッド１の上、詳細には研磨パッド１と半導体基板３上に
形成された被研磨物３１との間（図２参照）に供給する
ためのノズルである。上記研磨液４１は、電解液、砥
粒、及び薬液成分を含有する液体である。ここで、電解
液の具体例としては、亜硫酸や硫酸銅水溶液等が挙げら
れる。また、砥粒の具体例としては、シリカ（Ｓｉ
Ｏ2）、アルミナ（Ａｌ2Ｏ3）、またはセリア（Ｃｅ
Ｏ2）等が挙げられる。また、研磨液４１は上記電解液
を含有しているため、研磨パッド１から電流が加わると
電気分解し、半導体基板３上に形成された被研磨物３１
を溶解する。The polishing liquid supply section 4 supplies the polishing liquid 41 on the polishing pad 1, more specifically, between the polishing pad 1 and the object to be polished 31 formed on the semiconductor substrate 3 (see FIG. 2). Nozzle to perform The polishing liquid 41 is a liquid containing an electrolytic solution, abrasive grains, and a chemical component. Here, specific examples of the electrolytic solution include sulfurous acid and an aqueous solution of copper sulfate. As a specific example of the abrasive grains, silica (Si
O 2 ), alumina (Al 2 O 3 ), or ceria (Ce)
O 2 ). Since the polishing liquid 41 contains the above-mentioned electrolytic solution, the polishing liquid 41 is electrolyzed when an electric current is applied from the polishing pad 1, and the polishing object 31 formed on the semiconductor substrate 3 is formed.
Dissolve.
【００３１】電極５は、研磨パッド１の裏面１ｂ上に形
成された、例えば導電基板である。この電極５には、電
圧印加部６から電圧が印加される。図１及び図２におい
ては、電極５に負の電圧が印加されている。そして、こ
の電極５と固着した研磨パッド１に電流が流れる。The electrode 5 is, for example, a conductive substrate formed on the back surface 1b of the polishing pad 1. A voltage is applied to the electrode 5 from a voltage application unit 6. 1 and 2, a negative voltage is applied to the electrode 5. Then, a current flows through the polishing pad 1 fixed to the electrode 5.
【００３２】電圧印加部６は、半導体基板３（金属膜３
１）と、研磨パッド１の裏面１ｂに形成された電極５と
の間に、電圧を印加するためのものである。図１及び図
２においては、電圧印加部６は、電極５に負の電圧を印
加している。また、電圧印加部６は、０．１〜１０Ｖ
（ボルト）の電圧、一般的には数Ｖ程度の電圧を印加す
る。The voltage application section 6 is connected to the semiconductor substrate 3 (metal film 3).
This is for applying a voltage between 1) and the electrode 5 formed on the back surface 1b of the polishing pad 1. In FIGS. 1 and 2, the voltage applying unit 6 applies a negative voltage to the electrode 5. In addition, the voltage application unit 6 has a voltage of
(Volt), generally a voltage of about several volts.
【００３３】リテーナー７は、半導体基板３を保持する
ためのリング状のものであり、半導体基板３の周辺に載
置される。The retainer 7 has a ring shape for holding the semiconductor substrate 3 and is mounted around the semiconductor substrate 3.
【００３４】以上説明したように、本実施の形態１によ
る研磨装置は、被研磨物３１の凹凸に応じて部分的に電
気伝導率が変動し得る研磨パッド１と、半導体基板３を
研磨パッド１の表面１ａに押し付けるための保持板２
と、研磨液４１を供給する研磨液供給部４と、研磨パッ
ド１の裏面１ａに形成された電極５と、半導体基板３と
電極５との間に電圧を印加するための電圧印加部６を備
えている。ここで、研磨液４１は、電解液、砥粒、薬液
成分を含有している。As described above, in the polishing apparatus according to the first embodiment, the polishing pad 1 whose electric conductivity can partially fluctuate according to the unevenness of the object 31 to be polished, and the semiconductor substrate 3 Holding plate 2 for pressing against surface 1a of
A polishing liquid supply unit 4 for supplying a polishing liquid 41, an electrode 5 formed on the back surface 1 a of the polishing pad 1, and a voltage application unit 6 for applying a voltage between the semiconductor substrate 3 and the electrode 5. Have. Here, the polishing liquid 41 contains an electrolytic solution, abrasive grains, and a chemical solution component.
【００３５】この研磨装置によれば、化学的機械的研磨
を行うとともに、導電性を有する研磨パッド１を用い、
電圧印加部６によって半導体基板３と電極５との間に電
圧を印加することにより、研磨液４１に含まれる電解液
を電気分解して被研磨物３１を溶解させる電解研磨を行
う。すなわち、本実施の形態１による研磨装置は、電解
研磨アシストによる化学的機械的研磨を行うことができ
る。従って、研磨レートを向上させることができ、スル
ープットを向上させることができる。According to this polishing apparatus, chemical mechanical polishing is performed, and the polishing pad 1 having conductivity is used.
By applying a voltage between the semiconductor substrate 3 and the electrode 5 by the voltage applying unit 6, the electrolytic solution contained in the polishing liquid 41 is electrolyzed to perform the electrolytic polishing for dissolving the workpiece 31. That is, the polishing apparatus according to the first embodiment can perform chemical mechanical polishing by electrolytic polishing assist. Therefore, the polishing rate can be improved, and the throughput can be improved.
【００３６】また、研磨パッド１は弾性材により形成さ
れているため、半導体基板３が保持板２によって研磨パ
ッド１に押し付けられると、半導体基板３上に形成され
た被研磨物３１の凹凸に応じて研磨パッド１が変形す
る。具体的には、被研磨物３１の凸部３１ａに対応する
部分の研磨パッド１は、圧縮変形する。この圧縮変形に
よって、導電粒子１１同士の接触面積が大きくなり、電
気抵抗値が低くなる（図２の低抵抗領域Ａを参照）。従
って、電解研磨を行う際には、低抵抗領域Ａに流れる電
流値が高くなり、凸部３１ａの電解研磨レートが高くな
る。一方、被研磨物３１の凹部３１ｂに対応する部分の
研磨パッド１は圧縮変形しないため、上記凸部３１ａの
場合と比較して、導電粒子１１同士の接触面積は小さ
く、電気抵抗値は高い（図２の高抵抗領域Ｂを参照）。
従って、電解研磨を行う際には、高抵抗領域Ｂに流れる
電流値は低くなり、凹部３１ｂの電解研磨レートが低く
なる。Further, since the polishing pad 1 is formed of an elastic material, when the semiconductor substrate 3 is pressed against the polishing pad 1 by the holding plate 2, the polishing pad 1 is formed in accordance with the unevenness of the object to be polished 31 formed on the semiconductor substrate 3. The polishing pad 1 is deformed. Specifically, the portion of the polishing pad 1 corresponding to the convex portion 31a of the workpiece 31 undergoes compression deformation. Due to this compressive deformation, the contact area between the conductive particles 11 increases, and the electric resistance value decreases (see the low resistance region A in FIG. 2). Therefore, when performing the electropolishing, the value of the current flowing through the low-resistance region A increases, and the electropolishing rate of the projection 31a increases. On the other hand, since the polishing pad 1 in the portion corresponding to the concave portion 31b of the polishing object 31 is not compressed and deformed, the contact area between the conductive particles 11 is small and the electric resistance value is high as compared with the case of the convex portion 31a. (See high resistance region B in FIG. 2).
Therefore, when performing the electropolishing, the value of the current flowing in the high-resistance region B becomes low, and the electropolishing rate of the concave portion 31b becomes low.
【００３７】このように、本実施の形態１による研磨装
置によって化学的機械的研磨とともに行われる電解研磨
は、凸部３１ａの電解研磨レートは高く、凹部３１ｂの
電解研磨レートは低いため、段差緩和性に優れている。
従って、段差緩和性に優れた研磨装置を提供することが
できる。これにより、ディッシングやエロージョンを防
止することができる。さらに、本実施の形態１による研
磨装置は、段差緩和性に優れているため、金属膜を堆積
させる際に、従来のように膜厚を厚くする必要がない。
これにより、研磨時間を短縮することができ、スループ
ットを向上させることができる。As described above, in the electropolishing performed by the polishing apparatus according to the first embodiment together with the chemical mechanical polishing, the electrolytic polishing rate of the convex portion 31a is high and the electrolytic polishing rate of the concave portion 31b is low. Excellent in nature.
Therefore, it is possible to provide a polishing apparatus that is excellent in relieving steps. Thereby, dishing and erosion can be prevented. Furthermore, since the polishing apparatus according to the first embodiment is excellent in the step-relaxation property, it is not necessary to increase the film thickness when depositing a metal film as in the related art.
Thereby, the polishing time can be shortened, and the throughput can be improved.
【００３８】なお、本実施の形態１による研磨装置にお
いては、研磨液４１に砥粒を含有しているが、砥粒を含
有しない研磨液すなわち電解液と薬液成分とからなる研
磨液を用いてもよい。これにより、研磨パッド１の圧力
のみによって研磨を行う化学的研磨と、電解研磨とを併
用することができる。この場合も、段差緩和性に優れた
研磨装置を提供することができる。また、被研磨物４１
が化学的機械的研磨によって研磨することが困難な硬い
金属（例えば、Ｔｉ，Ｔａ等）であっても、容易に研磨
することができる。In the polishing apparatus according to the first embodiment, the polishing liquid 41 contains abrasive grains, but uses a polishing liquid containing no abrasive grains, that is, a polishing liquid composed of an electrolytic solution and a chemical solution component. Is also good. Thereby, the chemical polishing in which the polishing is performed only by the pressure of the polishing pad 1 and the electrolytic polishing can be used in combination. Also in this case, it is possible to provide a polishing apparatus that is excellent in step-relaxation. In addition, the object to be polished 41
Can be easily polished even with a hard metal (for example, Ti, Ta, etc.) which is difficult to polish by chemical mechanical polishing.
【００３９】また、研磨液４１に含有される電解液とし
て亜硫酸または硫酸銅水溶液を用いているが、研磨パッ
ド１を腐食せず、且つ被研磨物３１を溶解可能な他の電
解液を用いてもよい。Although an aqueous solution of sulfurous acid or copper sulfate is used as the electrolytic solution contained in the polishing liquid 41, another electrolytic solution which does not corrode the polishing pad 1 and can dissolve the object 31 to be polished is used. Is also good.
【００４０】実施の形態２．以下、図１及び図２を参照
して、本実施の形態２による研磨方法について説明す
る。図１に示すように、部分的に電気伝導率が変動し得
る研磨パッド１の表面１ａに対して、半導体基板３を保
持板２により押し付けながら、研磨液４１を研磨液供給
部４から供給し、半導体基板３上に形成された被研磨物
３１の化学的機械的研磨を行う。また、研磨パッド１及
び保持板２は、図示しない回転機構により回転する。こ
こで、研磨液４１は、例えば電解液としての亜硫酸また
は硫酸銅水溶液、砥粒としてのＳｉＯ2（シリカ），Ａ
ｌ2Ｏ3（アルミナ），またはＣｅＯ2（セリア）、並び
に薬液成分を含有するものである。また、上記化学的機
械的研磨を行うとともに、半導体基板３と、研磨パッド
１の裏面１ｂに形成された電極５との間に電圧を印加す
ることにより、上記被研磨物３１の電解研磨を行う。Embodiment 2 Hereinafter, a polishing method according to the second embodiment will be described with reference to FIGS. As shown in FIG. 1, a polishing liquid 41 is supplied from a polishing liquid supply unit 4 while a semiconductor substrate 3 is pressed by a holding plate 2 against a surface 1 a of a polishing pad 1 in which electric conductivity can partially vary. Then, the object to be polished 31 formed on the semiconductor substrate 3 is chemically and mechanically polished. The polishing pad 1 and the holding plate 2 are rotated by a rotation mechanism (not shown). Here, the polishing liquid 41 includes, for example, an aqueous solution of sulfurous acid or copper sulfate as an electrolytic solution, SiO 2 (silica),
It contains l 2 O 3 (alumina) or CeO 2 (ceria) and a chemical component. In addition, while performing the chemical mechanical polishing, a voltage is applied between the semiconductor substrate 3 and the electrode 5 formed on the back surface 1b of the polishing pad 1 to perform the electrolytic polishing of the object 31 to be polished. .
【００４１】次に、上記電解研磨について説明する。図
２に示すように、研磨パッド１は、複数の導電粒子１１
を含有することにより導電性を有している。そして、電
圧印加部６から半導体基板３（被研磨物３１）と電極５
との間に、電圧を印加することにより、研磨パッド１に
電流が流れる。ここで、印加電圧は、０．１〜１０Ｖ程
度であり、一般的には数Ｖ程度である。次いで、上記研
磨パッド１に電流が流れると、半導体基板３（被研磨物
３１）と研磨パッド１との間に供給された研磨液４１に
電流が加わる。その結果、研磨液４１に含有されている
電解液が電気分解し、半導体基板３上に形成された被研
磨物３１を溶解する。Next, the electrolytic polishing will be described. As shown in FIG. 2, the polishing pad 1 includes a plurality of conductive particles 11.
, It has conductivity. Then, the semiconductor substrate 3 (the object to be polished 31) and the electrode 5
A current flows through the polishing pad 1 by applying a voltage between the steps. Here, the applied voltage is about 0.1 to 10 V, and is generally about several V. Next, when a current flows through the polishing pad 1, a current is applied to the polishing liquid 41 supplied between the semiconductor substrate 3 (the workpiece 31) and the polishing pad 1. As a result, the electrolytic solution contained in the polishing liquid 41 is electrolyzed and dissolves the object to be polished 31 formed on the semiconductor substrate 3.
【００４２】次に、段差緩和性について説明する。研磨
パッド１は、例えばウレタン樹脂等の弾性材によって形
成されているため、半導体基板３上に形成された被研磨
物３１の凹凸（段差）に応じて変形する（図２参照）。
詳細には、被研磨物３１の凸部３１ａに対応する部分の
研磨パッド１は、圧縮変形するため、導電粒子１１同士
の接触面積が大きくなり、電気抵抗値が低くなる（図２
の低抵抗領域Ａ）。従って、低抵抗領域Ａに流れる電流
値が高くなる。電解研磨レートは、電解液の分解度すな
わち研磨液４１に加わる電流値に比例するため、凸部３
１ａの電解研磨レートが高くなる。一方、被研磨物３１
の凹部３１ｂに対応する部分の研磨パッド１は圧縮され
ないため、導電粒子１１同士の接触面積は小さく、電気
抵抗値は高い（図２の高抵抗領域Ｂ）。従って、高抵抗
領域Ｂに流れる電流値が低くなり、凹部３１ｂの電解研
磨レートが低くなる。このように、上記電解研磨は、被
研磨物３１の凸部３１ａの研磨レートが高く、凹部の研
磨レートが低い。すなわち、この電解研磨は、段差緩和
性に優れている。Next, a description will be given of the step mitigation property. Since the polishing pad 1 is formed of an elastic material such as urethane resin, the polishing pad 1 is deformed in accordance with irregularities (steps) of the polished object 31 formed on the semiconductor substrate 3 (see FIG. 2).
More specifically, since the polishing pad 1 at the portion corresponding to the convex portion 31a of the workpiece 31 undergoes compressive deformation, the contact area between the conductive particles 11 increases, and the electric resistance value decreases (FIG. 2).
Low resistance region A). Therefore, the value of the current flowing through the low resistance region A increases. Since the electrolytic polishing rate is proportional to the degree of decomposition of the electrolytic solution, that is, the current value applied to the polishing solution 41, the convex portion 3
The electropolishing rate of 1a increases. On the other hand, the object to be polished 31
Since the polishing pad 1 at the portion corresponding to the concave portion 31b is not compressed, the contact area between the conductive particles 11 is small and the electric resistance value is high (high resistance region B in FIG. 2). Therefore, the value of the current flowing through the high resistance region B decreases, and the electrolytic polishing rate of the concave portion 31b decreases. As described above, in the above-mentioned electrolytic polishing, the polishing rate of the convex portions 31a of the workpiece 31 is high, and the polishing rate of the concave portions is low. That is, this electropolishing is excellent in the step relaxation property.
【００４３】以上説明したように、本実施の形態２によ
る研磨方法は、電解研磨アシストによる化学的機械的研
磨（以下、第１の研磨方法と称する）である。すなわ
ち、砥粒を含む研磨液４１と研磨パッド１による従来の
化学的機械的研磨を行う。それとともに、研磨パッド１
に導電性をもたせ、研磨液４１に電解液を含有させ、半
導体基板３と研磨パッド１の裏面１ａに形成された電極
５との間に電圧を印加する。これにより、研磨液４１に
含有された電解液を電気分解し、被研磨物３１としての
金属膜を溶解させることによって電解研磨を行う。この
第１の研磨方法は、化学的機械的研磨のみであった従来
の研磨方法と比較して、高い研磨レートが得られる。従
って、第１の研磨方法を用いることによって、研磨時間
が短縮でき、スループットが向上する。As described above, the polishing method according to the second embodiment is a chemical mechanical polishing using electrolytic polishing assist (hereinafter, referred to as a first polishing method). That is, conventional chemical mechanical polishing is performed using the polishing liquid 41 containing abrasive grains and the polishing pad 1. At the same time, polishing pad 1
The polishing liquid 41 contains an electrolytic solution, and a voltage is applied between the semiconductor substrate 3 and the electrode 5 formed on the back surface 1 a of the polishing pad 1. As a result, the electrolytic solution contained in the polishing liquid 41 is electrolyzed and the metal film as the object to be polished 31 is dissolved to perform electrolytic polishing. In the first polishing method, a higher polishing rate can be obtained as compared with a conventional polishing method that uses only chemical mechanical polishing. Therefore, by using the first polishing method, the polishing time can be reduced and the throughput is improved.
【００４４】また、研磨パッド１は、被研磨物３１の凹
凸（段差）に応じて変形し、その変形部分の電気伝導率
が変動する。具体的には、被研磨物３１の凸部３１ａに
対応する部分の研磨パッド１は圧縮変形して、電気伝導
率が高くなる。一方、凹部３１ｂに対応する部分の研磨
パッド１は圧縮変形しないため、上記凸部３１ａの場合
と比較して、電気伝導率が低くなる。また、電解研磨レ
ートは、研磨パッド１に流れる電流値、すなわち電気伝
導率に比例する。このため、凸部３１ａの電解研磨レー
トは高く、凹部３１ｂの電解研磨レートは低い。従っ
て、電解研磨は、段差緩和性に優れている。すなわち、
本実施の形態２において、段差緩和性に優れた研磨方法
を実現できる。これにより、ディッシングやエロージョ
ンを防止することができる。また、研磨を行う前に堆積
される金属膜の膜厚を薄くすることができるため、研磨
時間を短縮することができ、スループットを向上させる
ことができる。The polishing pad 1 is deformed in accordance with the unevenness (step) of the object 31 to be polished, and the electric conductivity of the deformed portion fluctuates. Specifically, a portion of the polishing pad 1 corresponding to the convex portion 31a of the object to be polished 31 is compressed and deformed, and the electric conductivity is increased. On the other hand, since the polishing pad 1 in the portion corresponding to the concave portion 31b is not compressed and deformed, the electric conductivity is lower than that in the case of the convex portion 31a. The electrolytic polishing rate is proportional to the value of a current flowing through the polishing pad 1, that is, the electric conductivity. Therefore, the electropolishing rate of the projection 31a is high, and the electropolishing rate of the recess 31b is low. Therefore, the electropolishing is excellent in step relaxation. That is,
In the second embodiment, it is possible to realize a polishing method that is excellent in relieving a step. Thereby, dishing and erosion can be prevented. Further, since the thickness of the metal film deposited before polishing can be reduced, the polishing time can be shortened and the throughput can be improved.
【００４５】なお、本実施の形態２による研磨方法で
は、電解液、砥粒、薬液成分を含有する研磨液４１を用
いているが、砥粒を含有しない研磨液すなわち電解液と
薬液成分とからなる研磨液を用いてもよい。これによ
り、化学的物理的研磨ではなく研磨パッド１の圧力のみ
で研磨する化学的研磨と、電解研磨とを併用する研磨方
法（以下、第２の研磨方法と称する）を実現できる。こ
の第２の研磨方法も、上述した第１の研磨方法（化学的
機械的研磨と電解研磨を併用する方法）と同様に、段差
緩和性に優れている。また、この第２の研磨方法は、電
解研磨を優先的に行うため、化学的機械的研磨によって
は研磨することが困難な硬い金属（例えば、Ｔｉ，Ｔａ
等）を、容易に研磨（溶解）することができる。In the polishing method according to the second embodiment, the polishing liquid 41 containing an electrolytic solution, abrasive grains, and a chemical solution component is used. A polishing liquid may be used. Accordingly, a polishing method (hereinafter, referred to as a second polishing method) using both electrolytic polishing and chemical polishing in which polishing is performed only by the pressure of the polishing pad 1 instead of chemical physical polishing can be realized. This second polishing method is also excellent in the step-relaxing property as in the first polishing method (a method using both chemical mechanical polishing and electrolytic polishing). Further, in the second polishing method, since electrolytic polishing is performed preferentially, hard metal (for example, Ti, Ta) which is difficult to be polished by chemical mechanical polishing is used.
Etc.) can be easily polished (dissolved).
【００４６】また、第１の研磨方法と、第２の研磨方法
を組み合わせて、被研磨物３１を研磨してもよい。この
時、第１の研磨方法を用いて研磨を行った後に、第２の
研磨方法を用いて研磨を行う場合と、その逆の順序で２
つの研磨方法を用いて研磨を行う場合がある。例えば、
半導体基板３上に形成された被研磨物３１が、最下層か
ら、例えばＴｉ，Ｔａからなる接着層、例えばＴｉＮ，
ＴａＮからなるバリアメタル層、例えばＣｕ，Ａｌから
なる金属膜によって構成される３層構造を有している場
合に、金属膜及びバリアメタル層を第１の研磨方法を用
いて研磨し、接着層を第２の研磨方法を用いて研磨する
ことが考えられる。また、被研磨物３１が、バリアメタ
ル層（ＴｉＮ，ＴａＮ）と、その上に形成された金属膜
（Ｃｕ，Ｗ，Ａｌ）とによって構成される場合に、金属
膜を第２の研磨方法を用いて研磨した後、バリアメタル
層を第１の研磨方法を用いて研磨することが考えられ
る。このように、被研磨物３１の膜質や膜厚に好適な研
磨方法を選択することによって、効率良く研磨を行うこ
とができる。従って、研磨時間を短縮でき、スループッ
トを向上させることができる。The object to be polished 31 may be polished by combining the first polishing method and the second polishing method. At this time, polishing is performed using the first polishing method, and then polishing is performed using the second polishing method.
Polishing may be performed using two polishing methods. For example,
The object to be polished 31 formed on the semiconductor substrate 3 is formed from the lowermost layer with an adhesive layer made of, for example, Ti or Ta, for example, TiN,
When a barrier metal layer made of TaN, for example, has a three-layer structure composed of a metal film made of Cu and Al, the metal film and the barrier metal layer are polished by using the first polishing method, and the adhesive layer is formed. May be polished using the second polishing method. When the object to be polished 31 is composed of a barrier metal layer (TiN, TaN) and a metal film (Cu, W, Al) formed thereon, the metal film is formed by the second polishing method. After the polishing, the barrier metal layer may be polished using the first polishing method. As described above, by selecting a polishing method suitable for the film quality and thickness of the object 31 to be polished, polishing can be performed efficiently. Therefore, the polishing time can be reduced, and the throughput can be improved.
【００４７】[0047]
【発明の効果】本発明によれば、化学的機械的研磨と電
解研磨を併用することによって、段差緩和性に優れた研
磨装置、研磨パッド、研磨方法を提供することができ
る。また、従来のように被研磨物の膜厚を厚くする必要
がないため、研磨時間を短縮でき、スループットを向上
させることができる。According to the present invention, by using both chemical mechanical polishing and electrolytic polishing, a polishing apparatus, a polishing pad, and a polishing method which are excellent in relieving a step can be provided. In addition, since it is not necessary to increase the thickness of the object to be polished as in the related art, the polishing time can be reduced and the throughput can be improved.
【図１】 本発明の実施の形態による研磨装置および研
磨方法を説明するための断面図である。FIG. 1 is a cross-sectional view illustrating a polishing apparatus and a polishing method according to an embodiment of the present invention.
【図２】 図１に示した研磨パッドの近傍を拡大した断
面図である。FIG. 2 is an enlarged sectional view of the vicinity of a polishing pad shown in FIG.
１ 研磨パッド、１ａ 表面、１ｂ 裏面、２ 保持板
（バックプレート）、３ 半導体基板、４ 研磨液供給
部、５ 電極（導電基板）、６ 電圧印加部、７ リテ
ーナー、１１ 導電粒子、３１ 被研磨物（金属膜）、
３１ａ 凸部、３１ｂ 凹部、４１ 研磨液、Ａ 低抵
抗領域、Ｂ 高抵抗領域。REFERENCE SIGNS LIST 1 polishing pad, 1 a front surface, 1 b back surface, 2 holding plate (back plate), 3 semiconductor substrate, 4 polishing liquid supply unit, 5 electrode (conductive substrate), 6 voltage application unit, 7 retainer, 11 conductive particles, 31 polished Object (metal film),
31a convex portion, 31b concave portion, 41 polishing liquid, A low resistance region, B high resistance region.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｂ２４Ｂ 37/00 Ｂ２４Ｂ 37/00 Ｃ Ｈ Ｃ２５Ｆ 3/16 Ｃ２５Ｆ 3/16 Ｄ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) B24B 37/00 B24B 37/00 CH C25F 3/16 C25F 3/16 D
Claims (17)
ッドと、 半導体基板を保持するとともに、この半導体基板を前記
研磨パッドの表面に押し付ける保持板と、 前記半導体基板と前記研磨パッドの間に、電解液、砥
粒、及び薬液成分を含有する研磨液を供給する研磨液供
給部と、 前記研磨パッドの裏面に設けられた電極と、 前記半導体基板と、前記電極との間に電圧を印加する電
圧印加部と、 を備えることを特徴とする研磨装置。A polishing pad capable of partially changing the electrical conductivity; a holding plate for holding a semiconductor substrate and pressing the semiconductor substrate against the surface of the polishing pad; and between the semiconductor substrate and the polishing pad. A polishing liquid supply unit that supplies a polishing liquid containing an electrolytic solution, abrasive grains, and a chemical solution component; an electrode provided on the back surface of the polishing pad; and a voltage between the electrode and the semiconductor substrate. A polishing apparatus, comprising: a voltage application unit for applying voltage.
徴とする研磨装置。2. The polishing apparatus according to claim 1, wherein the polishing pad contains a plurality of conductive particles.
あることを特徴とする研磨装置。3. The polishing apparatus according to claim 2, wherein the conductive particles are spherical silicon covered with a metal film.
れた被研磨物の凹凸に応じて変形する弾性材であること
を特徴とする研磨装置。4. The polishing apparatus according to claim 2, wherein the material of the polishing pad is an elastic material that is deformed in accordance with unevenness of an object to be polished formed on the semiconductor substrate. Polishing equipment.
に、その変形部分に流れる電流値も変動することを特徴
とする研磨装置。5. The polishing apparatus according to claim 4, wherein the polishing pad changes a resistance value of a deformed portion and a current value flowing in the deformed portion.
変形した部分の抵抗値が低くなり、その部分に流れる電
流値が高くなることを特徴とする研磨装置。6. The polishing apparatus according to claim 5, wherein the polishing pad has a low resistance value in a portion that is compressed and deformed corresponding to the convex portion of the object to be polished, and a high current value flowing in the portion. A polishing apparatus, comprising:
とを特徴とする研磨装置。7. The polishing apparatus according to claim 1, wherein the voltage applying section applies a voltage of 0.1 to 10 V.
酸銅水溶液を含有する研磨液を供給することを特徴とす
る研磨装置。8. The polishing apparatus according to claim 1, wherein the polishing liquid supply section supplies a polishing liquid containing an aqueous solution of sulfurous acid or copper sulfate as the electrolytic solution.
有しないことを特徴とする研磨装置。9. The polishing apparatus according to claim 1, wherein the polishing liquid supplied by the polishing liquid supply section does not contain abrasive grains.
装置で用いられることを特徴とする研磨パッド。10. A polishing pad used in the polishing apparatus according to claim 1. Description:
パッドの表面に対して半導体基板を押し付けながら、電
解液、砥粒、及び薬液成分を含有する研磨液を半導体基
板と研磨パッドの間に供給し、半導体基板上に形成され
た被研磨物の化学的機械的研磨を行うとともに、 前記半導体基板と、前記研磨パッドの裏面に設けられた
電極との間に電圧を印加することにより、前記被研磨物
の電解研磨を行うことを特徴とする研磨方法。11. A polishing liquid containing an electrolytic solution, abrasive grains, and a chemical solution component is applied between a semiconductor substrate and a polishing pad while pressing the semiconductor substrate against a surface of the polishing pad where electric conductivity can partially vary. And performing chemical mechanical polishing of the object to be polished formed on the semiconductor substrate, by applying a voltage between the semiconductor substrate and an electrode provided on the back surface of the polishing pad, A polishing method, wherein the object to be polished is electropolished.
パッドの表面に対して半導体基板を押し付けながら、電
解液及び薬液成分を含有する研磨液を半導体基板と研磨
パッドの間に供給し、半導体基板上に形成された被研磨
物の化学的研磨を行うとともに、 前記半導体基板と、前記研磨パッドの裏面に設けられた
電極との間に電圧を印加することにより、前記被研磨物
の電解研磨を行うことを特徴とする研磨方法。12. A polishing liquid containing an electrolytic solution and a chemical solution component is supplied between the semiconductor substrate and the polishing pad while pressing the semiconductor substrate against the surface of the polishing pad, the electric conductivity of which can vary partially. A chemical polishing of the object to be polished formed on the semiconductor substrate is performed, and a voltage is applied between the semiconductor substrate and an electrode provided on the back surface of the polishing pad, whereby the object to be polished is electrolyzed. A polishing method characterized by performing polishing.
法において、 前記被研磨物の凹凸に応じて前記研磨パッドが変形する
と、この変形部分に対応する被研磨物の電解研磨レート
が変動することを特徴とする研磨方法。13. The polishing method according to claim 11, wherein when the polishing pad is deformed in accordance with unevenness of the object to be polished, an electrolytic polishing rate of the object to be polished corresponding to the deformed portion is changed. A polishing method characterized by the above-mentioned.
て、 前記研磨パッドの圧縮変形部分に対応する被研磨物の電
解研磨レートが高くなることを特徴とする研磨方法。14. The polishing method according to claim 13, wherein an electropolishing rate of an object to be polished corresponding to a compressively deformed portion of the polishing pad is increased.
法において、 前記半導体基板と、前記研磨パッドの裏面に設けられた
電極との間に、０．１〜１０Ｖの電圧を印加して電解研
磨を行うことを特徴とする研磨方法。15. The polishing method according to claim 11, wherein a voltage of 0.1 to 10 V is applied between the semiconductor substrate and an electrode provided on a back surface of the polishing pad. Polishing method.
法において、 前記半導体基板と研磨パッドの間に、前記電解液として
亜硫酸または硫酸銅水溶液を含有する研磨液を供給する
ことを特徴とする研磨方法。16. The polishing method according to claim 11, wherein a polishing liquid containing an aqueous solution of sulfurous acid or copper sulfate is supplied as the electrolytic solution between the semiconductor substrate and the polishing pad. Method.
項１２に記載の研磨方法を組み合わせて行うことにより
半導体基板上に形成された被研磨物を研磨することを特
徴とする研磨方法。17. A polishing method characterized by polishing an object to be polished formed on a semiconductor substrate by performing a combination of the polishing method according to claim 11 and the polishing method according to claim 12.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000285401A JP3453352B2 (en) | 2000-09-20 | 2000-09-20 | Polishing apparatus and polishing method |
| KR1020000067579A KR100650079B1 (en) | 2000-09-20 | 2000-11-15 | Polishing Apparatus and Polishing Pad Useful In Polishing Apparatus and Polishing Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000285401A JP3453352B2 (en) | 2000-09-20 | 2000-09-20 | Polishing apparatus and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002093758A true JP2002093758A (en) | 2002-03-29 |
| JP3453352B2 JP3453352B2 (en) | 2003-10-06 |
Family
ID=18769481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000285401A Expired - Fee Related JP3453352B2 (en) | 2000-09-20 | 2000-09-20 | Polishing apparatus and polishing method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3453352B2 (en) |
| KR (1) | KR100650079B1 (en) |
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| WO2003090964A1 (en) * | 2002-04-23 | 2003-11-06 | Sony Corporation | Polishing system and polishing method |
| WO2003092945A1 (en) * | 2002-04-30 | 2003-11-13 | Sony Corporation | Electrolytic polishing liquid, electrolytic polishing method and method for fabricating semiconductor device |
| US7670468B2 (en) | 2000-02-17 | 2010-03-02 | Applied Materials, Inc. | Contact assembly and method for electrochemical mechanical processing |
| US7678245B2 (en) | 2000-02-17 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for electrochemical mechanical processing |
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| US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
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2000
- 2000-09-20 JP JP2000285401A patent/JP3453352B2/en not_active Expired - Fee Related
- 2000-11-15 KR KR1020000067579A patent/KR100650079B1/en not_active IP Right Cessation
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| ES2682524A1 (en) * | 2017-03-20 | 2018-09-20 | Steros Gpa Innovative, S.L. | ELECTROPULIDO APPARATUS (Machine-translation by Google Translate, not legally binding) |
| WO2018172586A1 (en) * | 2017-03-20 | 2018-09-27 | Steros Gpa Innovative, S.L. | Electropolishing device |
| RU2700226C1 (en) * | 2018-10-02 | 2019-09-13 | федеральное государственное бюджетное образовательное учреждение высшего образования "Уфимский государственный авиационный технический университет" | Method of electropolishing of metal part |
| US11970633B2 (en) | 2018-11-12 | 2024-04-30 | Drylyte, S.L. | Use of sulfonic acids in dry electrolytes to polish metal surfaces through ion transport |
| US11970632B2 (en) | 2018-11-12 | 2024-04-30 | Drylyte, S.L. | Use of sulfonic acids in dry electrolytes to polish metal surfaces through ion transport |
| RU2697759C1 (en) * | 2019-02-01 | 2019-08-19 | Аскар Джамилевич Мингажев | Method of electrochemical treatment of internal channel of metal part and electrode-tool for its implementation |
| RU2710092C1 (en) * | 2019-05-06 | 2019-12-24 | Общество с ограниченной ответственностью "Фирма "Радиус-Сервис" | Apparatus for electrochemical treatment of helical tooth profile of inner surface in opening of tubular billet |
| RU2710086C1 (en) * | 2019-10-03 | 2019-12-24 | Мингажев Аскар Джамилевич | Method of electrically polishing inner channel of metal part and device for its implementation |
| RU2722544C1 (en) * | 2019-11-06 | 2020-06-01 | Аскар Джамилевич Мингажев | Method of turbomachine hollow blade treatment with perforated holes |
| RU2785200C1 (en) * | 2022-05-16 | 2022-12-05 | Раис Калимуллович Давлеткулов | Method for electrochemical polishing of inner surfaces of metal tubes and device for its implementation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3453352B2 (en) | 2003-10-06 |
| KR20020022522A (en) | 2002-03-27 |
| KR100650079B1 (en) | 2006-11-27 |
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