JP2002093723A - Heater cvd system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heater CVD system for depositing a thin film on a wafer placed in a treatment vessel (vacuum chamber) by decomposing and/or activating a material gas introduced into the treatment vessel (vacuum chamber) by a heater, where the heater longer service life is turned longer, a method of fixing the heater is improved and productivity is improved. SOLUTION: There are provided a heater CVD device, equipped with a gas inlet mechanism, wherein a connecting portion where a heater is connected to a power supply mechanism and/or a support portion where a heater is supported by a support are covered by a cover with a gap between the connecting portion and the support portion, while these are not brought into contact with the heater, and a gas can be introduced into a gap between the cover and the connecting portion and the support portion; and a heater CVD device, where an end portion of a heater inserted into a heater inserting port provided to the connecting portion is pressed to the connecting portion by a metallic or ceramic spring provided in the heater inserting port, so that the heater is attached to the connecting portion.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum chamber (processing vessel) in which a heating element which is maintained at a predetermined temperature is provided, and a raw material gas is decomposed and / or activated by the heating element. The present invention relates to a heating element CVD apparatus for depositing a thin film on a substrate disposed in a container.

[0002]

2. Description of the Related Art In the production of various semiconductor devices such as LSIs (Large Scale Integrated Circuits) and LCDs (Liquid Crystal Displays), chemical vapor deposition (CPP) is one of the processes for forming a predetermined thin film on a substrate. CVD: Chemica
The l Vapor Deposition method is widely used.

[0003] In the CVD method, a plasma CV for forming a film by decomposing and / or activating a source gas in a discharge plasma is used.
In addition to the D method and the thermal CVD method in which a substrate is heated and a chemical reaction is caused by the heat to form a film, the source gas is decomposed and / or activated by a heating element maintained at a predetermined high temperature. There is a CVD method of forming a film (hereinafter, referred to as a heating element CVD method).

A film forming processing apparatus (heating element CVD apparatus) for performing the heating element CVD method includes a heating element made of a high melting point metal such as tungsten provided in a processing chamber capable of vacuum evacuation.
It is configured to introduce a source gas while maintaining a high temperature of about 0 to 2000 ° C. The introduced source gas is decomposed and activated when passing through the surface of the heating element, and reaches the substrate, whereby a thin film of the final target material is deposited on the surface of the substrate. In addition, such a heating element C
Among the VD methods, those using a wire-shaped heating element are called hot wire CVD, and use a catalytic reaction of the heating element in decomposing or activating a source gas by the heating element. For these, catalytic CVD (or Cat-CVD: Catalyt)
ic-CVD) method.

In the heating element CVD method, the decomposition and activation of the raw material gas occur when passing through the surface of the heating element, so that the temperature of the substrate can be lowered as compared with the thermal CVD method in which the reaction is caused only by the heat of the substrate. There is an advantage. In addition, since plasma is not formed unlike the plasma CVD method, there is no problem of damage to the substrate due to plasma. For this reason, the heating element CVD method is considered promising as a film forming method for next-generation semiconductor devices, display devices, and the like, for which higher integration and higher functionality are increasingly required.

FIG. 8 shows a conceptual diagram of a conventional heating element CVD apparatus. A processing vessel 1 in which a predetermined process of forming a thin film on a substrate (not shown) is performed, an exhaust system 11 for evacuating the processing chamber 1 to a vacuum, and a predetermined process for forming a thin film in the processing vessel 1. A source gas supply system 21 that supplies a source gas is connected.

A heating element 3 is arranged in the processing vessel 1 so that the source gas supplied into the processing vessel 1 passes through the surface, and the heating element 3 is provided with a heating element CVD method. Required high temperature (about 1600-2000 ° C)
Power supply mechanism 3 that supplies power to heat and maintain
0 is connected.

In the processing vessel 1, a substrate (not shown) on which a predetermined thin film is formed by a raw material gas decomposed and / or activated by the heating element 3 maintained at the predetermined high temperature is held. A substrate holder 4 is provided.

In the embodiment shown in FIG. 8, the source gas supply system 21 includes a cylinder filled with a source gas (not shown), a supply pressure regulator, a flow regulator, a supply / stop switching valve, and the like. The source gas is supplied from the source gas supply system 21 into the processing container 1 via the gas supply device 2 disposed in the processing container 1 so as to face the heating element 3. In a process using two or more types of source gases, the source gas supply systems 21 are connected in parallel to the gas feeders 2 by the number of gas types used. The gas supply device 2 has a hollow structure, and has a large number of gas blowing holes 210 formed on a surface facing the substrate holder 4.

On the other hand, the exhaust system 11 is connected to the processing chamber 1 via a main valve 12 having an exhaust speed adjusting function, and the pressure in the processing chamber 1 is controlled by this adjusting function.

A substrate (not shown) to be processed, which is subjected to a predetermined process of forming a thin film, is carried in / out of the processing vessel 1 via a gate valve 5, and the substrate is placed in a substrate holder 4. A built-in heating mechanism (not shown) for heating (not shown) to a predetermined temperature.

The heating element 3 is generally made of a linear member, is bent in a sawtooth shape, and is held by a support 31 having at least a surface made of an insulator. A power supply line 32 from the power supply mechanism 30 is connected by a connection terminal 33, receives power supply through the connection terminal 33, and heats to a predetermined temperature required for the heating element CVD method. It is being maintained.

As the power supply mechanism 30, a DC power supply or an AC power supply is usually used. The heating element 3 is supplied with electric power from a power supply, and is set to a predetermined temperature by electric heating. By heating the heating element at a high temperature, the source gas is decomposed and / or activated, and film formation can be performed efficiently.

The connection of the heating element 3 to the connection portion where the heating element 3 is connected to the power supply mechanism 30 is shown in FIG.
0, as shown, a connection terminal body 331 to which the power supply line 32 is connected (corresponding to the connection terminal 33 in FIG. 8).
The end of the heating element 3 is inserted into a heating element insertion port 337 provided at the end, and tightened with a screw 332.

In the case of forming a silicon film and a case of forming a silicon nitride film as examples of thin film formation by the heating element CVD apparatus shown in FIG. 8, when forming a silicon film, silane (silane) is used as a source gas. A mixed gas of SiH ₄ ) and hydrogen (H ₂ ) is used. When a silicon nitride film is formed, a mixed gas of silane and ammonia (NH ₃ ) is used. The pressure inside the processing vessel 1 is 0.1-100P
a. In any of the films, the temperature of the heating element 3 is about 1600 to 2000 ° C., and the temperature of a substrate (not shown) held in the substrate holder 4 is 200 to 500 ° C. by a heating mechanism (not shown) in the substrate holder 4. Has been around.

When a silicon film or a silicon nitride film is formed under predetermined film forming conditions using the above-described conventional heating element CVD, a high melting point metal used for the heating element, for example, the above-described tungsten wire or the like is used. May react with silane gas to produce a silicon compound (silicidation).

In such silicidation, the raw material gas causes a reaction that denatures the heating element 3 in the vicinity of the connection terminal 33 or the connection with the support 31 which is the connection part of the power supply from the power supply mechanism 30. The raw material gas or its decomposed species cannot be instantaneously blown off from the surface of the heating element 3 by heat within a shorter time, and the heat treatment proceeds from a slightly lower temperature portion.

The silicidation changes the composition and diameter of the heating element, and lowers the resistance. as a result,
The amount of generated heat is reduced, and eventually the entire heating element is deteriorated, and as the usage time of the heating element is increased, the film forming speed is reduced. In addition, since reactants such as silicide generally have a high vapor pressure, they cause contamination of a deposited film, and the quality of a silicon film or a silicon nitride film to be formed due to the deterioration of the heating element. Also deteriorates. Therefore, it is necessary to release the vacuum in the processing container 1 to the atmosphere at a certain time after performing a predetermined number of processed sheets, and to replace the heating element 3, which is a problem in productivity.

Regarding this phenomenon of silicidation, 20
April 24-28, 2000, M in San Francisco, USA
Materials Research S held at the Arriott Hotel and the Argent Hotel
ociety 2000 Spring Meetin
g, the "The influence of W
Filament alloying on the
electronic properties of
HWCVD deposited a-Si: H fi
lms "by AH Mahan et al.

As a means of controlling the deterioration of the heating element due to silicidation described above, Mahan et al. Mentioned a means for extending the life of the heating element in the above-mentioned publication. It is proposed to heat with.

However, this means needs to secure a time for performing the process between each film formation, and there is a problem that productivity is reduced. Strictly speaking, since the silicidation of the heating element progresses during the film formation, that is, the temperature of the heating element or the heating element 3 such as a region of the heating element effective for decomposition and / or activation of the source gas. When the film formation time is long, the characteristics of the film change (degrade) in the thickness direction.

FIG. 9 shows that the heating element 3 is connected to the support 31 by a wire 34.
(Usually molybdenum is used), thereby reducing the heat conduction by reducing the contact area, and a portion where the temperature of the heating element 3 becomes slightly lower (the heating element 3 is connected to the power supply mechanism 30). This is to explain a portion of the support 31 of the conventional example which is intended to prevent silicidation which progresses from a connection portion or a support portion where the heating element 3 is supported by the support 31). However, even in this method, the wire 34
The temperature of the heat generating element 3 at the point where it contacts with the film is considerably lowered, and silicidation occurs at that point depending on the film forming conditions, such as a high silane gas pressure in forming a silicon film.

Therefore, even in the heating element CVD apparatus employing the configuration shown in FIG. 9, the vacuum in the processing vessel 1 is released to the atmosphere at a certain point after a predetermined number of processing has been performed, and the heating element 3
Need to be exchanged, and there is a problem in productivity.

On the other hand, if film formation is repeatedly performed in the heating element CVD apparatus, the film adheres to the inside of the processing container and eventually peels off, causing dust. The inventor of the present invention has proposed a removal method capable of efficiently removing an adhered film inside a processing container which causes the dust, and further, an in situ cleaning method of a heating element CVD apparatus (Japanese Patent Application No. 11-22208).
No. 7). This is a conventional heating element CVD as shown in FIG.
A cleaning gas supply system having the same configuration as that of the source gas supply system 21 is provided in the gas supply unit 2 of the apparatus.
The cleaning gas is introduced into the processing container 1 through the above. That is, after the inside of the processing container 1 is evacuated, the heating element 3 disposed inside is heated and maintained at 2000 ° C. or higher, and in this state, activated species generated by being decomposed and / or activated by the heating element 3 are generated. However, a cleaning gas capable of reacting with the adhered film and converting it into a gaseous substance is introduced into the processing container 1, and the produced gaseous substance is exhausted to remove the adhered film. It is an invention. The present invention is based on the finding that by maintaining the heating element at 2000 ° C. or higher, the heating element 3 itself is stable without reacting with the cleaning gas.

However, after the invention, the heating element 3 was moved to 2000
℃ or more, the power supply mechanism 30
The temperature of the portion near the connection terminal 33 and the vicinity of the contact portion with the support 31 which are connection portions of the power supply from the substrate is low, and as the adhered film is removed, the portion is etched by the reaction with the cleaning gas. It turned out that it gradually became thin and eventually cut. Therefore,
Similar to the problem of silicidation by the raw material gas, it is necessary to replace the heating element 3 at a certain point, which has been a problem in productivity.

Further, as described above, the conventional heating element C
In the VD device, the connection structure where the heating element 3 is connected to the power supply mechanism 30 employs a connection structure as shown in FIG. 10. Therefore, the tightening force of the screw 332 is determined by the manufacturer (operator). Is not constant. Also, screw 33
In addition to the fact that the force for tightening the screw 2 is not constant, the connection terminal body 331 is heated by energizing the heating element 3.
In some cases, the tightening force of the heating element 3 on the connection terminal body 331 by the heating element 32 may be reduced.

Normally, the heating element 3 is heated to 1600
Since the material is heated to about 2000 ° C., a refractory metal is used as the material, and linear tungsten having a diameter of 0.5 is generally used. However, once the tungsten wire is energized and heated at a high temperature of 1600 to 2000 ° C.,
Since the crystal state changes, it changes to a fragile and easily breakable property. Unlike the silicidation described above, this change is not limited to the area where the heating element 3 is connected to the power supply mechanism, but naturally extends to the entire heating element 3 and especially to the connection area. As a problem of the method of fixing a tungsten wire which has been newly changed to a brittle property instead of fixing with the above-mentioned screw, there has been a problem with the heating element CVD apparatus inherent in improving the productivity as well as the prevention of silicidation of the heating element. It was left as an issue to be solved.

[0028]

SUMMARY OF THE INVENTION An object of the present invention is to decompose and / or activate a raw material gas introduced into a processing vessel (vacuum chamber) by means of a heating element, and arrange the raw material gas in the processing vessel (vacuum chamber). Heating element CVD for depositing a thin film on a moving substrate
It is an object of the present invention to provide a heating element CVD apparatus with improved productivity. In order to achieve such an object, a part where the temperature of the heating element is slightly lower, which is one of the important mechanism parts of the heating element CVD apparatus, mainly in a connection part of the heating element with the power supply mechanism, At the time of film formation, it is degraded (silicidized) by a raw material gas or an active species originating therefrom, or reacts (etches) with a cleaning gas or an active species originating therefrom when an adhered film is removed (at the time of cleaning). It is another object of the present invention to provide a heating element CVD apparatus in which the method of fixing the heating element can be prevented, and the problem of deterioration of the heating element at that location can be prevented.

[0029]

A heating element CVD apparatus according to the present invention is configured as follows to achieve the above object.

The heating element CVD apparatus according to the present invention includes a processing container for performing a thin film forming process on a substrate held in a substrate holder provided therein, and a processing container connected to the processing container and having a processing chamber. An exhaust system for evacuating the vacuum and
A source gas supply system for supplying a source gas into the processing container; and a source gas supply system supported by a support, arranged in the processing container, and supplied with power from a power supply mechanism to a high temperature (about 1600 to 200
(About 0 ° C.). Then, the source gas introduced into the processing vessel from the source gas supply system is decomposed and / or activated by the heating element maintained at a high temperature, and a thin film is formed on the substrate held by the substrate holder. Is a heating element CVD apparatus having a basic form.

In the heating element CVD apparatus according to the present invention, in the above-described configuration, the connecting portion where the heating element is connected to a power supply mechanism and / or the supporting portion where the heating element is supported by a support may include: A gap is provided between the connecting part and the supporting part, and the cover is mounted without contacting the heating element, and gas is introduced into the gap between the cover and the connecting part and the supporting part. And a gas introduction system for performing the operation.

In addition, at the connection portion where the heating element is connected to the power supply mechanism and / or at the support portion where the heating element is supported by the support, the heating element exists between the cover and the connection portion and the support portion. The gap is communicated with the internal space of the processing container via a gap formed between the cover mounted without contacting the end of the heating element and the end of the heating element.

Therefore, the gas introduced from the gas introduction system for introducing gas into the gap between the cover and the connecting portion and the supporting portion exists between the cover and the connecting portion and the supporting portion. Into the processing container via the gap formed and the gap formed between the cover and the end of the heating element.

As a result, when a gas is introduced from the gas introduction system into the gap between the cover and the connecting portion and the supporting portion at the time of film formation or removal of the adhered film (cleaning),
From the gap, the fluid flows into the processing container via a gap formed between the cover and the end of the heating element.

Therefore, at the time of film formation, a raw material gas such as silane gas enters the gap inside the cover between the cover and the connecting portion or the supporting portion, that is, the raw material gas has a slightly lower temperature than the heating element. Contact with a part can be suppressed. Also, at the time of removing the adhered film (cleaning), the cleaning gas enters the gap inside the cover between the cover and the connecting portion or the supporting portion, that is, the cleaning gas has a slightly lower temperature of the heating element. Contact with a part can be suppressed.

Further, when the cover comes into contact with the heating element, the temperature of the heating element at the contact portion decreases, and the portion at which the temperature decreases contacts the raw material gas, the cleaning gas, and the active species originating therefrom. Although the progress of silicidation and the instability of the film formation environment occur, as described above, the cover is attached to the connection portion or the support portion without contacting the end of the heating element, that is, Since a gap is formed between the cover and the end of the heating element, there is no such fear.

Thus, a portion where the temperature of the heating element is slightly lower, such as a connection portion where the heating element is connected to the power supply mechanism or a support section where the heating element is supported by the support, is formed by film formation. It is possible to prevent the material gas from deteriorating (silicidation) or reacting with the cleaning gas (etching) when removing the deposited film (cleaning).

As a result, the life of the heating element can be prolonged and the film formation environment can be stabilized, and the frequency of replacement of the heating element can be reduced due to the prolongation of the life of the heating element. Can do it.

In the above, the gas introduced from the gas introduction system into the gap between the cover and the connection portion or the support portion is as follows:
Any of hydrogen, argon, helium, neon, krypton, xenon, nitrogen, ammonia, or two of these
It can be a mixed gas consisting of more than one species.

Another heating element CVD apparatus proposed by the present invention is the same as the above-described heating element CVD apparatus of the basic mode.
A connection portion where the heating element is connected to a power supply mechanism,
A heating element insertion port into which the end of the heating element is inserted and removed, and an elastic support member slidably attached in a direction in which the end of the heating element is inserted into and removed from the heating element insertion port. In addition, in the heating element insertion port, one side faces the end of the heating element inserted into the heating element insertion port, and the other side is slidably supported by the elastic body support. The elastic body support is moved in a direction in which the heating element end is inserted into the heating element insertion opening, thereby pressing the heating element end against the connecting portion by the elastic force of the elastic body. ,
The heating element is attached to the connection portion.

Here, the metal or ceramic elastic body may come into contact with a heating element reaching a high temperature of 1600 to 2000 ° C. and be heated to about 600 ° C. It is desirable to use a spring made of a metal such as Inconel, which is a material that does not lose force, or a ceramic such as silicon nitride.

According to the heating element CVD apparatus having the above configuration,
The contact area between the end of the heating element and the connection portion can be maintained at a constant area given to the heating element insertion port, and the end of the heating element can always be pressed against the connection portion with a substantially constant force. .

Also, by adopting the above-described configuration, unlike the conventional fixing by the tightening force of the screw as shown in FIG. 10, the elastic body support (for example, a spring retainer) inserts the heating element into the connecting portion. By sliding the end of the heating element into the mouth in parallel with the insertion / removal direction, the fixing by the pressing force from the elastic body that exerts the elastic force or the release of the force is instantaneously performed, and the end of the heating element is , Can be installed and removed at the connection.

Therefore, even if the heating element is once heated and deteriorates due to current heating, the end portion of the heating element is fixed by a constant elastic force stable at a high temperature. Attachment and removal at the connection part of the part can be done easily and in a short time,
An apparatus downtime due to maintenance can be reduced, and a heating element CVD apparatus with high productivity can be provided.

Still another heating element CVD apparatus proposed by the present invention is the heating element CVD apparatus of the above-described basic form, wherein a connection portion where the heating element is connected to a power supply mechanism is an end of the heating element. A heating element insertion port through which the heating element is inserted and removed, and a metal coil spring disposed in the heating element insertion port, wherein the metal block at the end of the heating element inserted into the heating element insertion port, It is characterized by being held by the elastic force of a metal coil spring in the heating element insertion opening, and supplying power from the power supply mechanism through the metal coil spring.

Again, the metal coil spring is 1600
Contact with heating element reaching high temperature of ~ 2000 ℃, 600 ℃
Since it may be heated to a close range, it is desirable to use a metal such as Inconel, which is a material that does not lose its elasticity even at such a temperature.

According to this configuration, the end of the heating element is
With a metal coil spring, it can always be held at the connection part with a substantially constant force.

Further, by inserting and removing the metal block at the end of the heating element into the insertion port of the heating element, the fixing by the pressing force from the metal coil spring exerting the elastic force or the release of the force is instantaneously performed. Since the end of the heating element can be easily attached and detached at the connection portion in a short time, the downtime of the apparatus due to maintenance can be reduced, and a heating element CVD apparatus with high productivity can be provided. can do.

Thus, with the above configuration,
A part where the temperature of the heating element is slightly lowered, such as a connection part where the heating element is connected to the power supply mechanism or a support part where the heating element is supported by the support, is deteriorated by the source gas during film formation ( Silicidation) or reacting (etching) with a cleaning gas when removing the deposited film (cleaning), and even if the heating element is once heated and deteriorated and becomes brittle, The end portion is kept fixed by a substantially constant elastic force stable even at high temperatures, and the attachment and detachment of the end portion of the heating element at the connection portion can be performed easily and in a short time. That is, by combining with the prolongation of the life of the heating element by preventing silicidation and etching, the heating element CV with high productivity that can reduce the apparatus downtime due to maintenance.
A D device can be provided.

[0050]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows the main structure of a first embodiment of a heating element CVD apparatus according to the present invention. The processing vessel 1 and its internal structure, an exhaust system 11, a raw material gas introducing system 21 and the like are shown. The configuration and structure are the same as those of the conventional heating element CVD apparatus shown in FIG. Further, the same members as those shown in FIG. 8 are denoted by the same reference numerals, and description thereof is omitted.

FIG. 1 shows the heating element 3, a support 31 for supporting the heating element 3, a power supply line 32, and covers 301 and 302.

Each of the covers 301 and 302 has a connection side (connection terminal 33) where the heating element 3 is connected to the power supply line 32 and a support section side (not connected) where the heating element 3 is supported by the support 31. 5), as shown in FIG. 5, a gap 311a is present inside the gap, that is, a gap 311a is present between the connection part and the support part, and without contact with the heating element 3, that is, Gap 3 between
11b.

Further, in order to introduce gas into the gap 311a inside the covers 301 and 302, a gas supply system 321 having the same configuration as the source gas introduction system 21 shown in FIG. 8 is schematically shown.

In this embodiment, the heating element 3 is connected to the power supply line 3
The connection part (connection terminal 33) connected to the support member 2 and the support part where the heating element 3 is supported by the support body 31
01 and 302 are shown by broken lines.

The cover 301 collectively covers one portion where the heating element 3 is supported by the support 31 and two portions where the heating element 3 is connected to the connection terminal 33, and the cover 302 supports the heating element 3 with the support 31. Two parts are covered together.

Here, it goes without saying that the number of support portions and connection portions (connection terminals) covered by one cover is arbitrary depending on the shape of the heating element 3.

FIG. 2 shows a main structure of a second embodiment of a heating element CVD apparatus according to the present invention. The same members as those shown in FIGS. 1 and 8 are denoted by the same reference numerals. In the present embodiment, each of the portion where the heating element 3 is supported by the support body 31 and the connection portion (connection terminal 33) where the heating element 3 is connected to the power supply line 32 are individually covered by the cover 3.
Covers 303 and 304 cover the heating element 3 and the supporting portions of the support 31, and cover 304.
Covers the connection terminal 33 portion.

FIG. 3 shows a main structure of a third embodiment of a heating element CVD apparatus according to the present invention. The heating element 3 has a supporting member 31 shown in FIG. The present invention is applied to a body CVD apparatus. Members similar to those shown in FIGS. 1, 2 and 9 are denoted by the same reference numerals. In the present embodiment, the portion where the heating element 3 is in contact with the wire 34 and the portion where the heating element 3 is connected to the connection terminal 33 are covered with covers 305 and 306. And the cover 306 collectively covers the two portions where the heating element 3 is in contact with the wire 34. I have. Here, as in the description of the embodiment shown in FIG. 1, it goes without saying that the number of contact portions and connection terminal portions covered by one cover is arbitrary depending on the shape of the heating element 3.

FIG. 4 shows the main structure of a fourth embodiment of a heating element CVD apparatus according to the present invention. Figure 1
Members similar to those shown in FIGS. 3 and 9 are denoted by the same reference numerals. In the present embodiment, each of the portion where the heating element 3 is in contact with the wire 34 and the portion connected to the connection terminal 33 are covered with individual covers 307 and 308, respectively. And the cover 308 covers the connection terminal 33.

In forming a silicon film by a conventional heating element CVD apparatus shown in FIG. 8, a silane gas and a hydrogen gas are supplied from a source gas supply system 21 (only one system is shown in FIG. 8) to a gas supply device 2. And introduced into the processing container 1.

On the other hand, in the embodiment of the present invention,
Preferably, only silane gas is introduced from the source gas supply system 21 into the processing vessel 1 via the gas supply device 2, and hydrogen gas is supplied from the gas supply system 321 to the gap 3 in the covers 301 to 308.
11a.

In the heating element CVD apparatus of the present invention, the covers 301 to 308 are arranged without contacting the heating element 3. That is, the covers 301 to 308 and the heating element 3
Is provided between them, the hydrogen gas introduced into the gaps 311a in the covers 301 to 308 as described above allows the hydrogen gas introduced into the gaps 31
Introduced into the processing vessel 1 via 1b.

FIG. 5 is a schematic view of a section A of the second embodiment of the present invention shown in FIG. Hydrogen gas is supplied to the gas supply system 3
21 into the gap 311 a in the cover 304 in the direction of the arrow 322, and the gap 311 between the heating element 3 and the cover 304.
b is introduced into the processing container 1 as indicated by an arrow 323.

By the flow of the hydrogen gas, the silane gas introduced into the processing vessel 1 from the gas supply unit 2 and the active species derived from the silane gas decomposed and / or activated on the surface of the uncovered heating element 3 Gap 31 in cover 304
1a from the direction opposite to the arrow 323 can be prevented, and the heating element 3 is connected to the power supply line 32 from the power supply mechanism.
Can be prevented from coming into contact with a slightly lower temperature portion of the end of the heating element 3 in the vicinity of the connection portion (connection terminal) 33 connected thereto, and being degraded by silicidation.

Also, at the portion where the heating element 3 is supported by the support 31 (the portion covered by the cover 303 of the second embodiment shown in FIG. 2), the same structure as that shown in FIG. By adopting a structure (which differs from the structure shown in FIG. 5 only in that the power supply line 32 from the power supply mechanism is disconnected and the connection terminal 33 is not present), the heating element supported by the support 31 It is possible to prevent the silane gas or the like from coming into contact with the portion 3 to form silicide and deteriorate.

The prevention of such deterioration of the heating element 3 by the silicidation is based on the same principle as that shown in FIGS.
Cover 30 in the first, third and fourth embodiments shown in FIG.
1, 302, and 305 to 308 units.

Here, the gas introduced into the covers 301 to 308 is not limited to hydrogen gas, but may be any of argon, helium, neon, krypton, xenon, or a mixed gas of two or more of these. In any case, the deterioration of the heating element 3 can be similarly prevented.

When hydrogen gas is introduced simultaneously with these gases, the hydrogen gas is introduced from the gas supply unit 2 (FIG. 8), and another gas is introduced through gaps in the covers 301 to 308. Alternatively, hydrogen gas may be mixed with another gas and introduced through gaps in the covers 301 to 308. However, it is more efficient to mix and introduce from the gaps in the covers 301 to 308.

In the formation of a silicon nitride film by the conventional heating element CVD apparatus shown in FIG. 8, a silane gas and an ammonia gas are supplied from a source gas supply system 21 (only one system is shown in FIG. 8). 2 into the processing vessel 1.

On the other hand, in the embodiment of the present invention,
Preferably, only silane gas is introduced into the processing vessel 1 from the source gas supply system 21 via the gas supply device 2, and ammonia gas is supplied from the gas supply system 321 to the gap 311 a in the covers 301 to 308 in the direction of the arrow 322. It can be configured to be introduced and then introduced into the processing chamber 1 from the gap 311b between the heating element 3 and the cover 301 as indicated by an arrow 323.

As in the case of forming the silicon film, the silane gas introduced into the processing vessel 1 and the active species derived from the silane gas decomposed and / or activated on the surface of the uncovered heating element 3 are thereby formed. It can be prevented from entering the gap 311a in the covers 301 to 308 from the direction opposite to the arrow 323, and is supported by the vicinity of the portion where the heating element 3 is connected to the connection terminal 33 or by the support 31 of the heating element 3. It can be prevented that they come into contact with a portion of the heating element 3 where the temperature is slightly lower, such as the vicinity of a portion where the heating is performed, and that the portion is silicided and deteriorated.

The gas introduced through the gaps in the covers 301 to 308 is a mixture of ammonia gas, hydrogen, argon, helium, neon, krypton, xenon, and nitrogen, or a mixture of two or more of these. A mixed gas may be used, and any of these can similarly prevent the heating element 3 from deteriorating.

In order to form a silicon nitride film efficiently, it is necessary to introduce ammonia gas. When ammonia gas is introduced simultaneously with these gases, the ammonia gas is introduced from the gas supply unit 2 and other gases are introduced. Cover 30
The ammonia gas may be introduced through a gap in the cover 1 to 308, or may be mixed with another gas and introduced through a gap in the cover 301 to 308. However, it is more efficient to mix and introduce other gas through the gaps in the covers 301 to 308.

The formation of the silicon film and the silicon nitride film according to the above embodiment of the present invention is an example of application of the heating element CVD apparatus of the present invention, and can be applied to other film formation. In forming these films, silane gas is used, but disilane (Si) other than silane gas is used.
_The present invention can be applied to 2H ₆ ), trisilane (Si ₃ H ₈ ), tetraethoxysilane (TEOS), and the like.

In the embodiment of the present invention, when removing the film adhering to the inside of the processing container 1, the cleaning gas is supplied from a cleaning gas supply system (not shown) having the same configuration as the source gas supply system 21. The gas is introduced into the processing vessel 1 through the supply device 2 and any one of hydrogen, argon, helium, neon, krypton, xenon, nitrogen, and ammonia, or a mixed gas of two or more thereof is supplied from the gas supply system 321. It is introduced into the gap 311a in the covers 301 to 308.

As a result, the cleaning gas introduced into the processing container 1 and the uncovered heating element 3
The active species originating from the cleaning gas decomposed and / or activated on the surface of the cover 31 can be prevented from entering the gap 311a in the cover from the direction opposite to the arrow 323, and
And the vicinity of the heating element 3 connected to the connection terminal 33 can be prevented from being etched and deteriorated.

Here, the heating element CVD apparatus of the present invention uses fluorine (F ₂ ), chlorine (Cl ₂ ), nitrogen trifluoride (N
F ₃ ), methane tetrafluoride (CF ₄ ), ethane hexafluoride (C ₂ F ₆ ), propane octafluoride (C ₃ F ₈ ), carbon tetrachloride (CCl ₄ ), chlorotrifluoromethane (CCl ₄ )
The present invention can be applied to any cleaning gas of F ₃ ), pentafluorochloride ethane (C ₂ ClF ₅ ), chlorine trifluoride (ClF ₃ ), and sulfur hexafluoride (SF ₆ ).

In the above-described heating element CVD apparatus of the present invention, a linear heating element 3 is used. However, the heating element may be a foil, or a linear heating element may be arranged in a coil shape or the like. May be. However, when a coil-shaped heating element is used, the gap between the cover and the heating element is set to be narrow so as to effectively prevent the raw material gas and its active species, or the cleaning gas and its active species from entering the cover. In order to reduce the area of the gap, it is desirable to use a heating element having at least a linear shape in the gap.

FIGS. 6A and 6B show a connection terminal body 331 (corresponding to the connection terminal 33 in FIG. 5) which is a constituent member of the connection portion in the fifth embodiment according to the present invention. This is for explaining the attachment of the heating element 3.

This embodiment is characterized by a mounting structure of a heating element at a connection portion where the heating element 3 is connected to the power supply line 32, which is indicated by reference numeral C in FIG.
(A) and (b) show a configuration in which a connection terminal body 331 (corresponding to the connection terminal 33 in FIG. 5), which is a component of the connection portion, is directly fixed to the upper surface of a support 31 (not shown). It represents.

The connection terminal body 331 (the connection terminal 33 in FIG. 5)
Corresponds to a heating element insertion port 337 into which the end of the heating element 3 is inserted and removed, and a heating element insertion port 33 in which the end of the heating element 3 is inserted.
7 is provided with a spring holding member 334 as an elastic support member slidably attached in the direction of insertion and removal into the device 7 (the direction indicated by the arrow 335 in FIG. 6A).
An elastic body made of metal or ceramic (spring 333 in the embodiment shown in FIG.
7.

The spring 333 is, as shown in FIG.
One side (the left side in FIG. 6A) is a heating element insertion port 337.
6 faces the end of the heating element 3 inserted therein.
(A), the right side (middle) is slidably supported by the spring retainer 334.

In the state shown in FIG. 6A, the spring holding member 334 does not press the spring 333. In this state, FIG.
(A) As shown, the end of the heating element 3 is
37, and then the spring holding member 334 is moved to the state shown in FIG.
7 (in the lower side in FIG. 6A), the spring 333 is pressed, and the end of the heating element 3 is pressed against the connection terminal body 331 by the elastic force of the spring 333. The heating element 3 is attached to the connection terminal body 331. This attachment can be performed instantaneously and easily by the operation of sliding the spring holding member 334 downward in FIG. 6A.

In the state shown in FIG. 6B in which the heating element 3 is attached to the connection terminal body 331, the heating element 3
Of the spring 333 supported by the spring holding member 334
With a substantially constant force due to the elastic force of the connection terminal body 331
Is pressed against.

When replacing the heating element 3, the spring holding member 334 is slid upward in FIG.
(A) When the state is returned to the illustrated state, the force of the spring 333 pressing the end of the heating element 3 against the connection terminal body 331 is instantaneously released, so that the end of the heating element 3 can be easily removed.

In the above-described embodiment of FIGS. 6A and 6B, as one measure for contributing to stable film formation, a plate made of a high melting point metal such as tungsten or molybdenum is used as a spring 333 and a heating element. 3 (not shown) to make it difficult for the heat of the heating element 3 to be conducted to the spring 333, thereby reducing the temperature rise of the spring 333 and reducing the spring force due to the temperature rise of the spring 333. It is also possible to prevent change.

A spring may be considered as an elastic body which exerts an elastic force for pressing the end of the heating element 3 against the connection terminal body 331. The spring may be made of metal such as beryllium copper, stainless steel, or Inconel, or may be used. Those made of ceramic or the like can be adopted. However, 1600
When it comes into contact with a heating element reaching a high temperature of 2000 ° C. and is heated to near 600 ° C., it is desirable to use a spring made of Inconel or ceramics.

In the conventional heating element CVD apparatus having the basic form described with reference to FIGS. 8 and 9, the connecting portion where the heating element 3 is connected to the power supply mechanism is replaced with the connection section shown in FIGS. 6 (a) and 6 (b). With the structure described in the embodiment, the heating element CVD apparatus proposed by the present invention can be obtained. According to such a configuration, even if the heating element is once heated and deteriorates due to heating, the end of the heating element 3 is fixed by the stable and substantially constant elastic force of the spring 333 at a high temperature. And the connecting portion 3 at the end of the heating element 3
3 can be easily attached and detached.

Also, in the conventional heating element CVD apparatus having the basic form described with reference to FIGS. 8 and 9, FIGS.
The heating element 3 according to the embodiment described in
The structure of a connecting part connected to the heating element 3 and a supporting part where the heating element 3 is supported by the support 31 is adopted.
FIG. 6 shows the connection part connected to the power supply mechanism.
By adopting the structure described in the embodiments (a) and (b), the heating element CVD apparatus proposed by the present invention can be provided. According to such a configuration, a portion where the temperature of the heating element 3 becomes slightly lower, which is one of the important mechanical sections of the heating element CVD apparatus, mainly at a connection portion of the heating element with the power supply mechanism, is formed. During film formation, it is possible to prevent deterioration (silicidation) due to a raw material gas or an active species originating from the source gas, and to prevent reaction (etching) with a cleaning gas or an active species originating from the cleaning gas during cleaning. It is possible to provide a heating element CVD apparatus which has an improved fixing method and can prevent the problem of deterioration of the heating element at that location.

FIGS. 7A and 7B show the mounting structure of the heating element 3 on the connection terminal body 331 (corresponding to the connection terminal 33 in FIG. 5) which is a constituent member of the connection portion (connection terminal 33). 13 illustrates another embodiment.

The connection terminal body 331 (the connection terminal 33 in FIG. 5)
Includes a heating element insertion port 337 into which the end of the heating element 3 is inserted and removed, and a metal coil spring 340 arranged in the heating element insertion port 337.

On the other hand, the heating element 3 has a metal block in the form of a boss 338 at the end thereof, and the boss 338 inserted into the heating element insertion port 337 is
Is held by the connection terminal body 331 by the elastic force of the metal coil spring 340 in the inside, and the connection terminal body 33 of the heating element 3
1 and the metal coil spring 34
Electric power is supplied to the heating element 3 through 0.

A boss 33 provided at an end of the heating element 3
8 is inserted into the heating element insertion opening 337, instantaneously and easily by the elastic force of the metal coil spring 340.
While holding the boss 338 on the connection terminal body 331,
Electrical contact for power supply to the heating element 3 can be made through the metal coil spring 340.

In the state shown in FIG. 7A in which the heating element 3 is attached to the connection terminal body 331, the heating element 3
Is held by the connection terminal body 331 with a substantially constant force due to the elastic force of the metal coil spring 340.

When exchanging the heating element 3, the boss 338
The boss 338 of the heating element 3 is simply pulled out from the heating element insertion port 337 against the elastic force of the metal coil spring 340.
Can be easily extracted.

In the conventional heating element CVD apparatus having the basic configuration described with reference to FIGS. 8 and 9, the connecting portion where the heating element 3 is connected to the power supply mechanism is replaced with the connection section shown in FIGS. 7 (a) and 7 (b). With the structure described in the embodiment, the heating element CVD apparatus proposed by the present invention can be obtained. According to such a configuration, even if the heating element is once heated and deteriorates due to current application and heating, the end of the heating element 3 is formed by the stable and almost constant elastic force of the metal coil spring 340 at a high temperature. It is fixed and can be easily attached and detached at the connection portion 33 at the end of the heating element 3.

The preferred embodiments of the present invention have been described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments, and the technical scope can be understood from the description of the claims. Can be changed to various forms.

For example, the shapes of the covers 301 to 308, the method of fixing the covers 301 to 308, and the covers 301 to 30
The positions where the electric power and the hydrogen gas are introduced into 8 are not limited to those illustrated in the attached drawings.

[0100]

According to the present invention, the connecting portion where the heating element is connected to the power supply mechanism and the supporting portion where the heating element is supported by the support are provided with a gap between the connecting portion and the supporting portion. And a gas that is covered with a cover without contact with the heating element, that is, with a gap interposed between the heating element and a gas introduced into the gap between the cover, the connection portion, and the support portion. An introduction mechanism is provided. Therefore, any one of hydrogen, argon, helium, neon, krypton, xenon, nitrogen, and ammonia, or a mixed gas of two or more of these, or a mixture gas of two or more of these, is supplied from the gas introduction mechanism to the gap between the cover and the connection portion and the support portion When the film is formed, a source gas such as a silane gas or the like and an active species originating therefrom at the time of film formation, and a cleaning gas or an active species originating therefrom during the removal of the adhered film are interposed between the cover and the connection part and the support part. Of the heating element, such as the vicinity of the connection portion or the vicinity of the support portion, where the temperature of the heating element is slightly lowered, can be suppressed. Therefore, it is possible to effectively prevent the heating element from deteriorating due to silicidation that proceeds from a portion where the temperature of the heating element is slightly lowered during film formation, or an etching phenomenon during cleaning.

Further, the attachment of the end of the heating element at the connection portion where the heating element is connected to the power supply mechanism may be performed by inserting the end of the heating element into a heating element insertion opening provided at the connection portion.
This is realized by pressing the end of the heating element against the connection portion with a substantially constant elastic force by a metal or ceramic elastic body provided in the heating element insertion port. Therefore,
Even if the heating element becomes brittle once energized and heated, even at high temperatures, the end of the heating element can be kept fixed to the connection part by stable and almost constant elasticity. Attachment and detachment at the connection portion can be easily and quickly performed.

Therefore, by combining with the prolongation of the life of the heating element by the prevention of silicidation and the etching phenomenon, it is possible to provide a heating element CVD apparatus with high productivity which can reduce the downtime of the apparatus due to maintenance.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing a configuration example of a main part of a first embodiment of a heating element CVD apparatus according to the present invention.

FIG. 2 is a conceptual diagram showing a configuration example of a main part of a second embodiment of a heating element CVD apparatus according to the present invention.

FIG. 3 is a conceptual diagram showing a configuration example of a main part of a third embodiment of a heating element CVD apparatus according to the present invention.

FIG. 4 is a conceptual diagram showing a configuration example of a main part of a fourth embodiment of a heating element CVD apparatus according to the present invention.

FIG. 5 is a conceptual diagram showing a section A of a heating element CVD apparatus according to a second embodiment of the present invention.

FIG. 6 is a conceptual diagram showing an example of a configuration of a main part of a fifth embodiment of a heating element CVD apparatus according to the present invention, and FIG. 6 (a) is a diagram illustrating a state in which a heating element is not pressed by a spring; (B) is a diagram illustrating a state in which the heating element is pressed by a spring,

FIG. 7A shows a sixth example of the heating element CVD apparatus according to the present invention.
FIG. 7B is a conceptual diagram showing an example of a configuration of a main part of the embodiment, and FIG.
The schematic diagram of the coil spring used in the embodiment of (a).

FIG. 8 is a conceptual diagram showing a configuration example of a conventional heating element CVD apparatus.

FIG. 9 is a conceptual diagram showing a main configuration of another configuration example of a conventional heating element CVD apparatus.

FIG. 10 is a diagram illustrating a mounting portion of a heating element in a conventional heating element CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Processing container 2 Gas supply unit 3 Heating element 4 Substrate holder 11 Exhaust system 21 Source gas supply system 30 Power supply mechanism 31 Support 33 Connection terminal 301-308 Cover 311a, 311b Gap 321 Gas supply system 331 Connection terminal body 333 Spring 334 Spring holder 337 Heating element insertion slot 338 Boss 340 Coil spring

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Minoru Karasawa 5-8-1, Yotsuya, Fuchu-shi, Tokyo Anelva Co., Ltd. F-term (reference) 4K030 EA06 FA10 KA24 5F045 AA03 AB02 AB33 AC01 AC12 BB08 BB10 DP03 EB02 EB03 EE13 EE14 EF05 EK07 EK08

Claims (4)

[Claims] 1. A processing container for performing a thin film forming process on a substrate held by a substrate holder provided therein, and an exhaust system connected to the processing container and evacuating the processing container to a vacuum. A source gas supply system for supplying a source gas into the processing container; and a heating element supported by the support, arranged in the processing container, and heated to a high temperature by receiving power supply from a power supply mechanism. A heating element configured to decompose and / or activate a source gas introduced into the processing vessel from the source gas supply system by a heating element maintained at a high temperature, thereby forming a thin film on a substrate held by the substrate holder; C
A VD device, wherein a gap is provided between the connection part and the support part at a connection part where the heating element is connected to a power supply mechanism and / or a support part where the heating element is supported by a support body. The cover is mounted without being in contact with the heating element, and a gas introduction system for introducing gas is provided in the gap between the cover and the connecting portion and the supporting portion. Characteristic heating element CVD apparatus. 2. A connecting part where the heating element is connected to the power supply mechanism includes: a heating element insertion opening into which an end of the heating element is inserted;
An elastic support member slidably attached in a direction in which an end of the heating element is inserted into and removed from the heating element insertion port, and one side of the heating element insertion port is provided in the heating element insertion port. An elastic body made of metal or ceramic facing the end of the inserted heating element and having the other side slidably supported by the elastic support is provided. By moving the portion in the direction in which the heating element is inserted into the heating element insertion port, the end of the heating element is pressed against the connection part by the elastic force of the elastic body, and the attachment of the heating element to the connection part is performed. The heating element CVD apparatus according to claim 1. 3. A processing container for performing a thin film forming process on a substrate held by a substrate holder provided therein, and an exhaust system connected to the processing container and evacuating the processing container to a vacuum. A source gas supply system for supplying a source gas into the processing container; and a heating element supported by the support, arranged in the processing container, and heated to a high temperature by receiving power supply from a power supply mechanism. A heating element configured to decompose and / or activate a source gas introduced into the processing vessel from the source gas supply system by a heating element maintained at a high temperature, thereby forming a thin film on a substrate held by the substrate holder; C
A VD device, wherein a connection portion where the heating element is connected to a power supply mechanism is:
A heating element insertion port into which the end of the heating element is inserted and removed, and an elastic support member slidably attached in a direction in which the end of the heating element is inserted into and removed from the heating element insertion port. In addition, in the heating element insertion port, one side faces the end of the heating element inserted into the heating element insertion port, and the other side is slidably supported by the elastic body support. The elastic body support is moved in a direction in which the heating element end is inserted into the heating element insertion opening, thereby pressing the heating element end against the connecting portion by the elastic force of the elastic body. ,
A heating element CVD apparatus, wherein the heating element is attached to a connection portion. 4. A processing container for performing a thin film forming process on a substrate held by a substrate holder provided therein, and an exhaust system connected to the processing container and evacuating the processing container to a vacuum. A source gas supply system for supplying a source gas into the processing container; and a heating element supported by the support, arranged in the processing container, and heated to a high temperature by receiving power supply from a power supply mechanism. A heating element configured to decompose and / or activate a source gas introduced into the processing vessel from the source gas supply system by a heating element maintained at a high temperature, thereby forming a thin film on a substrate held by the substrate holder; C
A VD device, wherein a connection portion where the heating element is connected to a power supply mechanism is:
A heating element insertion port into which the end of the heating element is inserted and removed, and a metal coil spring disposed in the heating element insertion port; and a metal at an end of the heating element inserted into the heating element insertion port. A heating element CVD apparatus characterized in that a block made of metal is held by the elastic force of a metal coil spring in the heating element insertion opening, and power is supplied from the power supply mechanism through the metal coil spring.