JP2002076368A - Electronic component and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To electrically reliably connect a functional part with outside to improve the productivity and the reliability. SOLUTION: An upper board 3 having initial through-holes 24 is bonded to a silicon substrate 2. After forming an angular velocity detector 11 on the substrate 2, a lower board 1 is bonded to the substrate 2. A boring process is applied to the initial through-holes 24 by sand blast, etc., to form through- holes 21. A conductive film for electrically connecting the detector 11 to outside is formed on the inner walls of the through-holes 21. This eliminates the shape variation of the through-holes 21, thereby forming through-holes 21 having approximately the same shape.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component such as an angular velocity sensor, an acceleration sensor, and a mechanical filter, and more particularly to a method of manufacturing an electronic component for extracting an electric signal to the outside and an electronic component.

[0002]

2. Description of the Related Art In general, angular velocity sensors, acceleration sensors, mechanical filters, and the like are widely known as electronic components obtained by processing a silicon substrate or the like using micromachining technology. In addition, this type of electronic component includes, for example, a silicon substrate, and a glass substrate surface-bonded to the front surface and the back surface of the silicon substrate. The silicon substrate is provided with, for example, a function unit for detecting an angular velocity, and the function unit is sealed with two glass substrates.

[0003] In order to electrically connect the functional part to the outside, a through hole penetrating a glass substrate and reaching a silicon substrate is formed, and a conductive film is provided in the through hole. (For example, JP-A-7-263709, JP-A-9-283663, etc.). Such an electronic component according to the related art is formed by joining a glass substrate and a silicon substrate by anodic bonding, and then performing sand blasting or the like to penetrate the glass substrate to expose a part of the silicon substrate, thereby forming a through hole. To form Then, a conductive film is formed on the inner wall of the through hole by using means such as sputtering or vapor deposition.

[0004]

However, in the prior art described above, after bonding the glass substrate and the silicon substrate, a hole is formed from the surface side of the glass substrate to form a through hole communicating from the glass substrate to the silicon substrate. are doing. Such drilling is usually performed with a large number of electronic components formed on the wafer.

[0005] At this time, there is a tendency that the sandblasting speed varies on the wafer surface, and at a certain position on the wafer surface, the through hole becomes a bottomed hole without penetrating the glass substrate. In this position, the through hole may penetrate the silicon substrate. As described above, when the through hole does not penetrate the glass substrate, electrical connection with the connection portion of the silicon substrate cannot be made. On the other hand, when the through hole also penetrates the silicon substrate, the functional portion of the silicon substrate is not connected. May also be damaged. For this reason, there is a problem that a defect of an electronic component is likely to occur and productivity is reduced.

Further, since the opening area of the through hole differs for each electronic component, the contact resistance between the conductive film and the connection portion varies. For this reason, since the input resistance and the output resistance of the electronic components vary, there is also a problem that the operation characteristics, detection characteristics, and the like of the functional units differ from one electronic component to another.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems of the prior art, and provides a method of manufacturing an electronic component capable of reliably and electrically connecting a functional unit to the outside and improving productivity and reliability. The purpose is to provide electronic components.

[0008]

In order to solve the above-mentioned problems, a method of manufacturing an electronic component according to the present invention is as follows.
A glass substrate having a through hole and a functional part forming substrate that forms a functional part are attached to each other, a hole is formed in the through hole through the through hole, and an inner wall of the processed through hole is formed between the functional part and the outside. Is provided with a conductive film for electrically connecting the conductive films.

With this configuration, after the glass substrate having the through hole is surface-bonded to the functional part forming substrate,
Since the through-hole is formed through the through-hole, the inner wall of the through-hole can be polished to increase the inner diameter thereof. Step can be eliminated. Therefore, by forming a conductive film on the inner wall of the processed through hole,
The conductive film does not break between the glass substrate and the silicon substrate, and the functional portion can be electrically connected to the outside by the conductive film. Further, when drilling a through-hole, the inner wall of the through-hole need only be slightly cut to remove protrusions and the like, so that variations in the shape of the processed through-hole due to the drilling can be reduced.

[0010] The manufacturing method according to the second aspect of the present invention is characterized in that:
A glass substrate having a through hole and a functional part forming substrate forming a functional part are attached to each other, a hole is formed in the through hole through the through hole, and a groove for wiring is formed around the through hole in the glass substrate. To provide a conductive film over the entire surface of the glass substrate and the processed through-hole, remove the conductive film on the surface of the glass substrate among the conductive film, the processed through-hole and the wiring groove A conductive film for electrically connecting the functional unit to the outside is provided on the inner wall of the device.

Thus, after the glass substrate having the through-hole is surface-bonded to the functional part forming substrate, the through-hole is formed through the through-hole.
The step between the glass substrate and the functional part forming substrate can be removed. Therefore, the conductive film does not break between the glass substrate and the silicon substrate, and the functional portion can be electrically connected to the outside by the conductive film.

Further, a groove is formed around the through hole in the glass substrate at the same time as forming the through hole, and a wiring groove is formed on the surface of the glass substrate. By forming the conductive film over the entire surface, the conductive film can be provided on the inner wall of the processed through hole and the wiring groove. Then, by polishing the surface of the glass substrate in this state, the conductive film on the surface of the glass substrate is removed from the conductive film, and the functional portion and the outside are electrically connected to the inner wall of the through hole and the wiring groove. A conductive film to be electrically connected can be provided. For this reason, it is possible to form a wiring connected in the through hole on the surface of the glass substrate using the wiring groove.

On the other hand, an electronic component according to a third aspect of the present invention
A glass substrate having an initial through hole is bonded to a functional part forming substrate that forms a functional part, a hole is formed in the initial through hole through the initial through hole, and a wiring is formed around the initial through hole in the glass substrate. And a conductive film for electrically connecting the functional portion to the outside is provided on the inner wall of the processed through hole and the wiring groove.

With this configuration, it is possible to form a processed through hole in the glass substrate, to remove projections and the like of the initial through hole, and to eliminate a step between the glass substrate and the functional portion forming substrate. be able to. Moreover, since the wiring groove is provided on the surface of the glass substrate near the opening of the through hole, a conductive film connected to the inner wall of the processed through hole can be formed on the inner wall of the wiring groove. For this reason, the wiring connected to the processed through-hole can be attached to the wiring groove of the glass substrate.

The invention according to claim 4 is that a portion of the conductive film located in the wiring groove is used as an electrode pad.

Thus, the functional portion can be electrically connected to the outside by performing wire bonding or the like on the conductive film in the wiring groove forming the electrode pad.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an angular velocity sensor will be described as an example of an electronic component according to an embodiment of the present invention with reference to the accompanying drawings.

FIGS. 1 to 10 show a first embodiment of the present invention. In the figure, reference numeral 1 denotes a lower substrate formed of a glass substrate, and a silicon substrate 2 described later is surface-bonded to the front surface side of the lower substrate 1 by anodic bonding.

Reference numeral 2 denotes a silicon substrate as a functional portion forming substrate formed of conductive low-resistance single-crystal silicon. The silicon substrate 2 is subjected to an etching process so that an angular velocity detecting portion 11 to be described later can be used. , A frame portion 12 is formed.

Reference numeral 3 denotes an upper substrate formed of a glass substrate, and a back surface 3A of the upper substrate 3 serves as a bonding surface for bonding to the connection portion of the angular velocity detector 11 and the frame portion 12, and A housing recess 3B is formed at the center of the back surface 3A side, and the front surface 3 of the upper substrate 3 opposite to the back surface 3A is formed.
C is a non-joining surface. Further, the upper substrate 3 is anodically bonded to the connection part of the angular velocity detection part 11 and the frame part 12,
A closed chamber 4 is defined between the lower substrate 1 and the upper substrate 3.

Numeral 11 denotes an angular velocity detecting section as a functional section (external force detecting section). When the angular velocity Ω acts around the rotational axis XX as shown in FIG. Angular velocity Ω around X-X is detected. The angular velocity detector 11 is formed inside the frame 12 by etching the silicon substrate 2.

Here, the configuration of the angular velocity detector 11 will be described with reference to FIG. 13 and 13 are support portions provided on the lower substrate 1, 14 is provided in a state of being separated from the surface of the lower substrate 1 by a concave groove 15, and is supported by each of the support portions 13 by four support beams 16. The vibrating body 14 is displaceable in the directions indicated by arrows A and B in FIG. Comb-shaped electrodes 14A, 14A are provided on both sides of the vibrating body 14.

17, 17 are located on both sides of the vibrating body 14,
Comb-shaped electrodes 17A are provided on both sides of each of the electrode support portions 17 on the electrode support provided on the lower substrate 1, and each of the comb-shaped electrodes 17A is connected to each of the comb-shaped electrodes 14A of the vibrating body 14.
Are engaged with each other.

Reference numeral 18 denotes an electrode plate provided on the surface of the lower substrate 1 located below the vibrating body 14. The electrode plate 18 is formed of, for example, a conductive metal material. When it is displaced in the direction of arrow B, the amount of displacement is detected.

Reference numeral 19 denotes a drawer connected to the electrode plate 18,
The lead portion 19 includes a wiring portion 19A made of a conductive metal material extending from the electrode plate 18 and provided on the surface of the lower substrate 1 together with the electrode plate 18, and a silicon material provided on the wiring portion 19A. And a pad portion 19B composed of

Here, the support portion 13, the electrode support portions 17, 1
The connection portion 7 and the drawing portion 19 constitute a connection portion for electrically connecting the angular velocity detection portion 11.

Reference numerals 20, 20,... Denote four via holes (only two are shown) formed from the upper substrate 3 to the angular velocity detector 11, and each of the via holes 20 is a through hole 21 described later.
And a concave bottom 22 provided at the bottom of the through hole 21, and a conductive film 23 provided on the inner wall of the through hole 21 and the concave bottom 22. In the embodiment,
Although only the case where the via hole 20 is provided in the electrode support portion 17 is shown, the support portion 13 and the lead-out portion 19 are also shown in FIG.
Similarly, a via hole is formed.

Are tapered through holes 21 penetrating through the upper substrate 3. Each of the electrode supporting portions 1 of the silicon substrate 2 forming a connection portion is formed in each of the through holes 21.
7 is exposed. Each through-hole 21 has, for example, a diameter dimension on the front surface 3C side of the upper substrate 3 serving as an opening.
It is larger than the diameter dimension on the A side. For this reason, the through-hole 21 has a tapered shape whose diameter gradually decreases from the surface 3C side of the upper substrate 3 toward the silicon substrate 2 side.

Are recessed bottoms formed in the silicon substrate 2 at the bottoms of the through holes 21. The recessed bottoms 2
Reference numeral 2 has a smoothly continuous wall surface with no step between itself and the through-hole 21 and has a substantially circular shallow groove shape.

Are through holes 21 and concave bottom 2
2, a conductive film provided on the inner wall, and the conductive film 23 is connected to the connection portion (support portion 13, each electrode support portion 1) of the angular velocity detector 11.
7, the extending portion 19) extends toward the surface 3C of the upper substrate 3. The portion of the conductive film 23 located on the surface 3C side of the upper substrate 3 forms an electrode pad 23A.
Then, by applying a solder bump, wire bonding, or the like to the electrode pad 23A, the conductive film 23 electrically connects the angular velocity detector 11 to the outside.

In the angular velocity sensor configured as described above,
Between the comb-shaped electrode 14A of the vibrating body 14 and the comb-shaped electrode 17A of the electrode support portion 17, an external oscillating circuit provides a conductive film 2
The drive signal is applied through 3 or the like, and the vibrating body 14 is
Vibrating in the direction. In this state, when an angular velocity Ω about the rotation axis XX acts on the angular velocity sensor, Coriolis force acts on the vibrating body 14, and the vibrating body 14 is displaced in the direction of arrow B in accordance with the magnitude of the Coriolis force. The vibrating body 14 and the electrode plate 1
8 changes.

Then, the change in the separation distance is transmitted to the vibrator 1
A signal based on the capacitance between the electrode 4 and the electrode plate 18 is output, and the signal is output to the detection circuit through the conductive film 23. Then, in the detection circuit, the capacitance is converted into a voltage, and the rotation axis X
The angular velocity Ω applied around −X can be measured.

Next, a method of manufacturing the angular velocity sensor according to the present embodiment will be described with reference to FIGS. In the present embodiment, a case where a single angular velocity sensor is manufactured will be described as an example. However, after manufacturing a large number of angular velocity sensors on one silicon substrate 2 (silicon wafer), each angular velocity sensor is separated. It may be configured.

First, FIG. 3 shows the upper substrate 3 before forming the initial through holes 24 and the like. Then, in the through hole processing step shown in FIG. 4, an accommodation recess 3 </ b> B for accommodating the angular velocity detection unit 11 is formed on the back surface of the upper substrate 3. In addition, the support portion 13 serving as a connection portion of the upper substrate 3 and each electrode support portion 1
7. An initial through hole 24 penetrating in the thickness direction is formed in a portion to be joined to the drawer 19. At this time, the initial through-hole 24 is formed from the surface side of the upper substrate 3 by using a drilling means such as sandblasting. For this reason, the initial through hole 24 has a shape whose diameter is gradually reduced from the front surface side to the rear surface side, and a portion of the initial through hole 24 that is open to the rear surface 3A side of the upper substrate 3 has a defect such as a missing open end. An annular projecting portion 24A having a chamfered shape is formed.

In the first bonding step shown in FIG. 5, the silicon substrate 2 is formed on the back surface 3A of the upper substrate 3 having the initial through holes 24.
Abut the surface. In this state, a voltage of, for example, about 1000 V is applied to the upper substrate 3 and the silicon substrate 2 while heating them to a bonding temperature, and bonding means such as anodic bonding is applied between the silicon substrate 2 and the lower substrate 1. Surface bonding and bonding.

In the functional part processing step shown in FIG. 6, after forming a mask (not shown) on the back surface of the silicon substrate 2, a concave groove 15 is formed by etching, and the concave groove 15 of the silicon substrate 2 is formed. Is a thin portion 2A. In this state, a mask (not shown) in which the angular velocity detector 11 and the frame 12 are modeled is formed on the back surface of the silicon substrate 2, and etching is performed from the back surface side of the silicon substrate 2 through the mask. Thin portion 2 of silicon substrate 2
An angular velocity detector 11 is formed at a position corresponding to A, and a frame 12 is machined outside the angular velocity detector 11.

In the second bonding step shown in FIG. 7, the angular velocity detecting section 11 is covered with the lower substrate 1 on which the electrode plate 18 and the like are formed at the substantially central portion in advance, and the surface of the lower substrate 1 is Of these, the support portion 13 serving as a connection portion, the electrode support portions 17, the extraction portion 19 (see FIG. 2), and the frame portion 12 are brought into contact with each other. Then, these are surface-bonded by anodic bonding in a reduced-pressure atmosphere. At this time, the angular velocity detector 11 is sealed in the sealed chamber 4 defined.

In the hole forming process shown in FIG. 8 and FIG. 9, an annular projection 24A is formed on the entire inner wall of the initial through hole 24 or the inner wall by using a hole forming means such as sandblasting over the entire surface of the upper substrate 3. Polish the silicon substrate 2 side.
At this time, since the inner wall of the initial through-hole 24 is polished, the inner diameter dimension is slightly enlarged, and the annular projection 24A is removed. Further, since the surface of the electrode support 17 exposed in the initial through-hole 24 is also drilled, the electrode support 17
A shallow groove-shaped concave bottom portion 22 is formed on the surface of the substrate, and between the upper substrate 3 and the electrode support portion 17, the through hole 21 and the concave bottom portion 22 have an inner wall continuous in a tapered shape without any level difference.

Although the hole processing by sandblasting is performed on the entire surface 3C of the upper substrate 3, for example, a mask (not shown) in which the initial through-hole 24 is formed is provided with a mask (not shown).
It is also possible to form a film on the surface side of the first hole and then drill a hole only in the initial through hole 24.

Further, the conductive film processing step shown in FIG.
Metal mask (not shown) according to the position of through hole 21
Is disposed on the surface 3C side of the upper substrate 3, and a metal thin film such as aluminum is formed on the inner wall of the through hole 21 of the upper substrate 3 by using a means such as sputtering with the metal mask as a mask. Is provided. Thus, the through hole 21 and the concave bottom 2 are formed by the hole forming step and the conductive film forming step.
2 and the via hole 20 made of the conductive film 23,
An electrode base metal such as nickel or platinum is provided on a portion of the conductive film 23 located on the surface 3C of the upper substrate 3.

The conductive film 23 is formed by forming a metal thin film through a metal mask. For example, after forming a conductive film on the entire surface of the upper substrate 3, the inside of the through hole 21 or the like is formed by photolithography or the like. A configuration in which the conductive film is left and the conductive film in other portions is removed may be employed.

However, according to the present embodiment, after the upper substrate 3 having the initial through holes 24 is bonded to the silicon substrate 2, holes are formed in the initial through holes 24. Therefore, polishing by hole processing such as sandblasting is performed. The amount can be reduced and the processing time can be shortened. For this reason, for example, even when a plurality of angular velocity sensors formed on a single wafer are simultaneously drilled, it is possible to eliminate variations in the inner diameter of the through-holes 21 provided in each angular velocity sensor, and the like. Through holes 21 having the same shape can be formed.

Since the through holes 21 are formed by polishing the inner wall of the initial through holes 24, the initial through holes 24 are formed.
Can be removed, and the through-hole 21 can be removed.
Is such that the gap between the upper substrate 3 and the electrode supporting portion 17 has a continuous taper without any level difference, and the electrode supporting portion 17 can be reliably exposed on the bottom surface thereof. For this reason, the conductive film 23 provided in the through hole 21 is not disconnected due to the step, and the electrode support portion 17 is surely formed through the conductive film 23.
And the outside can be electrically connected, and the reliability can be improved.

Further, since the hole processing time for forming the through hole 21 is short, the through hole 21 does not penetrate the silicon substrate 2. For this reason, the angular velocity detector 11
Damage can be prevented, and the tightness of the closed chamber 4 can be ensured, so that the yield can be increased and the productivity can be improved.

On the other hand, since the opening areas of the through holes 21 can be made substantially equal, the contact resistance between the conductive film 23 and the connection portion such as the electrode support 17 can be made substantially equal. For this reason, variations in the input resistance and output resistance of the angular velocity sensor can be suppressed, and the operating characteristics and detection characteristics of the angular velocity detecting unit 11 can be stabilized.

Next, FIGS. 11 to 15 show a second embodiment of the present invention.
An angular velocity sensor according to an embodiment of the present invention is characterized in that a wiring groove is formed around an opening of a through hole on an upper substrate provided above a silicon substrate, The conductive groove connected to the inside of the through hole is provided in the groove. In the present embodiment, the same components as those in the above-described first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

Are wiring grooves provided on the surface 3C of the upper substrate 3 near the opening of the through hole 21. The wiring groove 31 has a depth smaller than that of the through hole 21. A groove is provided on the surface 3C side of the upper substrate 3, surrounds the opening of the through hole 21, and a part thereof forms a substantially rectangular electrode portion 31A.

Are conductive films provided on the inner wall of each through-hole 21 and the inner wall of the wiring groove 31.
2 is a wiring groove 3 of the upper substrate 3 from the connection portion (support portion 13, each electrode support portion 17, and lead portion 19) of the angular velocity detection portion 11.
1. The electrode portion 31 of the conductive film 32
The part located in A constitutes the electrode pad 32A. Then, by applying a solder bump, wire bonding, or the like to the electrode pad 32A, the conductive film 32 electrically connects the angular velocity detector 11 to the outside.

Next, a method of manufacturing the angular velocity sensor according to the present embodiment will be described with reference to FIGS.

First, as in the first embodiment, an initial through hole 24 is formed in the upper substrate 3 by a through hole processing step, and the upper substrate 3 and the silicon substrate 2 are joined by the first joining step. Then, the angular velocity detecting section 11 is formed on the silicon substrate 2 by a functional section processing step. Then, the lower substrate 1 is joined to the silicon substrate 2 by a second joining step,
The angular velocity detector 11 is sealed between the lower substrate 1 and the upper substrate 3.

Next, in the hole forming step shown in FIG. 14, a mask (not shown) in which the wiring groove 31 is formed is formed on the surface 3C of the upper substrate 3 and then sandblasted into the initial through hole 24. Are formed in the upper substrate 3 to form tapered through holes 21, 21,. Thereby, the upper substrate 3
A through hole 21 having a tapered inner wall without a step and a concave bottom portion 22 are formed in the electrode support portion 17 and the electrode support portion 17, respectively. At the same time as the formation of the through hole 21, a wiring groove 31 recessed from the surface 3 </ b> C of the upper substrate 3 is formed near the opening of the through hole 21.

Then, the conductive film processing step shown in FIG.
A metal thin film 3 of aluminum or the like as a conductive film is formed over the entire surface 3C of the upper substrate 3 and the through hole 21 and the concave bottom 22.
3 is formed. At this time, the metal thin film 33 is formed on the inner wall of the through hole 21, the concave bottom portion 22, and the wiring groove 31.
The metal thin film 33 is also formed on the entire surface 3C of the upper substrate 3.

Thereafter, the upper substrate 3 is subjected to a surface polishing step.
Is polished to the position shown by the imaginary line aa in FIG. Thereby, the upper substrate 3 of the metal thin film 33 is formed.
What is formed on the surface 3C is removed. On the other hand, the metal thin film 33 formed in the inner wall of the through hole 21 and the concave bottom portion 22 and in the wiring groove 31 remains as it is in FIG.
As shown in FIG.

Thus, according to the present embodiment, the same operation and effect as those of the first embodiment can be obtained. However, in the present embodiment, the wiring groove 31 recessed from the surface of the upper substrate 3 is provided. Since the conductive film 32 is formed, for example, even when the angular velocity sensor is transported during the manufacturing process, the conductive film 32 is formed.
Can be prevented from coming into contact with a tool or the like, and peeling of the conductive film 32 can be prevented. Further, the electrode portion 31 of the wiring groove 31
Since A is provided with the electrode pad 32A, wire bonding is connected to the electrode pad 32A in the electrode portion 31A after mounting the angular velocity sensor. For this reason, the connection portion between the electrode pad 32A and the wire bonding is formed in the wiring groove 3A.
1 and can protect these connection sites. For this reason, wire bonding or the like can be reliably connected for a long period of time, and reliability and productivity can be improved.

Further, since the wiring shape of the conductive film 32 can be set by the wiring groove 31, the metal mask does not shift as compared with the case where the conductive film is formed using a metal mask, for example. In addition, the width of the wiring can be reduced. For this reason, the angular velocity sensor can be downsized and the manufacturing cost can be reduced.

In each embodiment, an angular velocity sensor has been described as an example of an electronic component. However, the present invention is not limited to this, and may be applied to an acceleration sensor, a mechanical filter, or the like.

In the first and second bonding steps, anodic bonding has been described as an example. However, the bonding may be performed with an adhesive or the like. In short, the bonding strength between the glass substrate and the silicon substrate is ensured. Just do it.

Further, in each embodiment, the via hole 20 including the through hole 21 and the like is illustrated and described in the electrode support portion 17 of the angular velocity detecting section 11, but the present invention is not limited to this. Similarly, a via hole 20 is formed in the support portion 13 and the lead portion 19 forming the connection portion.

Further, although the through hole 21 is formed in the upper substrate 3, the present invention is not limited to this, and the through hole 21 may be formed in the lower substrate 1. In this embodiment, the upper substrate 3 having the initial through holes 24 is bonded to the silicon substrate 2 and then the lower substrate 1 is bonded to the silicon substrate 2. However, the lower substrate 1 is bonded to the silicon substrate 2. After joining,
A configuration in which the upper substrate 3 having the initial through holes 24 is joined to the silicon substrate 2 may be employed.

[0060]

As described above in detail, according to the manufacturing method of the first aspect of the present invention, a glass substrate having a through hole and a functional part forming substrate for forming a functional part are bonded to each other, and a hole is formed in the through hole. After performing the above, the conductive film is provided on the inner wall of the processed through-hole, so that even when a large number of electronic components formed on a single wafer are simultaneously drilled, each electronic component has Variations in the shape of the through holes can be eliminated, and productivity can be improved. In addition, the functional portion and the outside can be reliably electrically connected to each other through the conductive film, so that reliability can be improved. Furthermore, since the opening area of the through hole is substantially the same shape and the contact resistance between the conductive film and the functional unit can be made substantially equal, the variation in the input resistance and the output resistance of the electronic component is suppressed, and the Operation characteristics, detection characteristics, and the like can be stabilized.

According to the second aspect of the present invention, a groove for wiring is formed on the surface of the glass substrate by forming a groove around the through hole at the same time as forming the through hole. By forming the conductive film, the conductive film can be provided on the inner wall of the through hole and the wiring groove. Then, in this state, by subjecting the surface of the glass substrate to polishing treatment or the like, the conductive film on the surface of the glass substrate is removed,
A conductive film that electrically connects the functional unit and the outside can be provided on the inner wall of the through hole and the wiring groove. For this reason, it is possible to form a wiring connected in the through hole on the surface of the glass substrate using the wiring groove. Further, since the wiring shape of the conductive film can be set by the wiring groove, the width of the wiring can be reduced, the angular velocity sensor can be downsized, and the manufacturing cost can be reduced.

On the other hand, the electronic component according to the third aspect of the present invention
Since the conductive film is formed in the wiring groove recessed from the surface of the glass substrate, the conductive film does not come into contact with a tool or the like even when the electronic component is transported during the manufacturing process, for example, and the conductive film is peeled off. Can be prevented, and the reliability can be improved.

According to the fourth aspect of the present invention, since the portion of the conductive film located in the wiring groove forms an electrode pad, the conductive film in the wiring groove serving as the electrode pad is subjected to wire bonding or the like. Thus, the functional unit can be electrically connected to the outside. Further, since the connection portion between the electrode pad and the wire bonding can be arranged in the wiring groove, the connection portion can be protected, and the reliability and productivity can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an angular velocity sensor according to a first embodiment.

FIG. 2 is a perspective view showing the angular velocity sensor of FIG. 1 with an upper substrate removed.

FIG. 3 is a sectional view showing the upper substrate in a state before an initial through hole is formed.

FIG. 4 is a cross-sectional view showing a state in which an initial through hole is formed in an upper substrate by a through hole processing step.

FIG. 5 is a cross-sectional view showing a state in which the upper substrate and the silicon substrate are joined by a first joining step.

FIG. 6 is a cross-sectional view showing a state in which an angular velocity detector is formed on a silicon substrate by a functional part processing step.

FIG. 7 is a cross-sectional view showing a state in which a lower substrate is bonded to a silicon substrate in a second bonding step.

FIG. 8 is a cross-sectional view showing a state in which a through hole is formed in an upper substrate by a hole forming step.

FIG. 9 is an enlarged sectional view showing a through hole in FIG. 8 in an enlarged manner.

FIG. 10 is an enlarged cross-sectional view showing a state where a conductive film is formed on the inner wall of the through hole by a conductive film processing step.

FIG. 11 is a sectional view showing an angular velocity sensor according to a second embodiment.

FIG. 12 is a plan view showing an angular velocity sensor according to a second embodiment.

FIG. 13 is a cross-sectional view similar to FIG. 7, showing a state in which an upper substrate and a lower substrate are bonded to a silicon substrate.

FIG. 14 is a cross-sectional view showing a state in which a through hole is formed in an upper substrate by a hole processing step, and a wiring groove is formed on a surface of the upper substrate.

FIG. 15 is a cross-sectional view showing a state in which a metal thin film is formed on the entire surface of the upper substrate and through holes and the like by a conductive film processing step.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lower substrate (glass substrate) 2 Silicon substrate 3 Upper substrate (glass substrate) 11 Angular velocity detection part (functional part) 12 Frame part 13 Support part (connection part) 17 Electrode support part (connection part) 19 Lead-out part (connection part) 20 via-hole 21 through-hole (processed through-hole) 22 concave bottom 23, 32 conductive film 24 initial through-hole 31 wiring groove 33 metal thin film (conductive film)

Claims (4)

[Claims] 1. A glass substrate having a through hole and a functional part forming substrate forming a functional part are attached to each other, a hole is formed in the through hole through the through hole, and the functional part is formed on an inner wall of the processed through hole. A method for manufacturing an electronic component, comprising: providing a conductive film that electrically connects between a semiconductor device and the outside. 2. A glass substrate having a through hole and a functional part forming substrate forming a functional part are attached to each other, a hole is formed in the through hole through the through hole, and a hole is formed around the through hole in the glass substrate. A groove is formed for wiring, a conductive film is provided over the entire surface of the glass substrate and the processed through hole, and the conductive film on the surface of the glass substrate is removed from the conductive film. A method for manufacturing an electronic component, comprising: providing a conductive film for electrically connecting the functional portion to the outside on the inner wall of the wiring groove. 3. A glass substrate having an initial through hole and a functional part forming substrate forming a functional part are bonded to each other, a hole is formed in the initial through hole through the initial through hole, and the initial through hole of the glass substrate is formed. An electronic component having a configuration in which a wiring groove is formed around a hole, and a conductive film for electrically connecting the functional unit to the outside is provided on an inner wall of the processed through hole and the wiring groove. 4. The electronic component according to claim 3, wherein a portion of the conductive film located in the wiring groove is an electrode pad.