JP2002064358A - Compound surface acoustic wave filter - Google Patents

Compound surface acoustic wave filter

Info

Publication number
JP2002064358A
JP2002064358A JP2000249238A JP2000249238A JP2002064358A JP 2002064358 A JP2002064358 A JP 2002064358A JP 2000249238 A JP2000249238 A JP 2000249238A JP 2000249238 A JP2000249238 A JP 2000249238A JP 2002064358 A JP2002064358 A JP 2002064358A
Authority
JP
Japan
Prior art keywords
filter
acoustic wave
surface acoustic
saw
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000249238A
Other languages
Japanese (ja)
Inventor
Shozo Matsumoto
省三 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP2000249238A priority Critical patent/JP2002064358A/en
Publication of JP2002064358A publication Critical patent/JP2002064358A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6489Compensation of undesirable effects
    • H03H9/6493Side lobe suppression
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/644Coupled resonator filters having two acoustic tracks
    • H03H9/6456Coupled resonator filters having two acoustic tracks being electrically coupled
    • H03H9/6469Coupled resonator filters having two acoustic tracks being electrically coupled via two connecting electrodes

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To sharpen the high frequency end of the passband curve of a compound surface acoustic wave(SAW) filter serially connecting first-third longitudinal coupling double mode SAW filters and an SAW resonator. SOLUTION: The compound SAW filter is configured by forming the first- third longitudinal coupling double mode SAW filters, the SAW resonator and an IDT electrode for capacitor on a piezoelectric substrate, serially connecting the first-third longitudinal coupling double mode SAW filters and the SAW resonator and parallel connecting the IDT electrode for capacitor between the stages.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は複合弾性表面波フィ
ルタに関し、特に通過域特性と減衰傾度を改善した複合
弾性表面波フィルタに関する。
The present invention relates to a composite surface acoustic wave filter, and more particularly to a composite surface acoustic wave filter having improved passband characteristics and attenuation gradient.

【0002】[0002]

【従来の技術】近年、弾性表面波フィルタ(以下、SA
Wフィルタと称す)は通信分野で広く利用され、高性
能、小型、量産性等の優れた特徴を有することから特に
携帯電話機等に多く用いられている。セルラー方式携帯
電話機のRF部には低損失、広帯域であると共に隣接す
る送受信波を分離するため減衰傾度の急峻なフィルタが
要求される。例えば、日本におけるセルラー電話方式
(PDC)の周波数は図8に示すように割り当てられて
いる。即ち、端末機の受信周波数帯には810〜843
MHz(以下、RX1帯と称す)と、870MHz〜8
85MHz帯(以下、RX2帯と称す)とが割り当てら
れており、RX2帯が端末機の送信周波数帯893MH
z〜898MHz(TX1)と近接しているため、RX
2帯に用いられる受信用RFフィルタの高域側の減衰傾
度として、893〜898MHz帯にて10dB以上
(図中αで表示)が要求されている。
2. Description of the Related Art Recently, a surface acoustic wave filter (hereinafter referred to as SA) has been developed.
W filters) are widely used in the field of communications and have excellent characteristics such as high performance, small size, and mass productivity, and are therefore often used particularly in mobile phones and the like. The RF section of a cellular mobile phone is required to have a filter having a low loss, a wide band, and a steep attenuation gradient in order to separate adjacent transmission and reception waves. For example, the frequency of the cellular telephone system (PDC) in Japan is allocated as shown in FIG. That is, the receiving frequency band of the terminal is 810 to 843.
MHz (hereinafter referred to as RX1 band) and 870 MHz to 8
An 85 MHz band (hereinafter, referred to as an RX2 band) is allocated, and the RX2 band is a transmission frequency band 893MH of a terminal.
Since it is close to z to 898 MHz (TX1), RX
The attenuation gradient on the high frequency side of the receiving RF filter used in the two bands is required to be 10 dB or more (indicated by α in the figure) in the 893 to 898 MHz band.

【0003】図9は従来の縦1次−3次モードを用いた
縦結合二重モード表面波フィルタ(以下、二重モードS
AWフィルタと称す)の構成を示す平面図であって、圧
電基板31の主面上に表面波の伝搬方向に沿ってIDT
電極32、33、34を近接配置すると共に、これらの
IDT電極の両側にグレーティング反射器(以下、反射
器と称す)35a、35bを配設する。そして、IDT
電極32、33、34はそれぞれ互いに間挿し合う複数
の電極指を有する一対のくし形電極から形成され、外側
のIDT電極33、34のそれぞれ一方のくし形電極を
接続して入力端子INに接続すると共に、他方のくし形
電極はそれぞれ接地する。さらに、中央のIDT電極3
2の一方のくし形電極を出力端子OUTに接続し、他方
のくし形電極を接地して、二重モードSAWフィルタを
構成している。
FIG. 9 shows a conventional longitudinally-coupled dual-mode surface acoustic wave filter using a first- and third-order longitudinal modes (hereinafter referred to as a dual mode S).
FIG. 4 is a plan view showing the configuration of an AW filter (hereinafter referred to as an AW filter) on the main surface of the piezoelectric substrate 31 along the propagation direction of the surface wave.
The electrodes 32, 33, and 34 are arranged close to each other, and grating reflectors (hereinafter, referred to as reflectors) 35a and 35b are provided on both sides of the IDT electrodes. And IDT
The electrodes 32, 33, and 34 are each formed of a pair of comb-shaped electrodes having a plurality of electrode fingers interposed therebetween, and each of the outer IDT electrodes 33, 34 is connected to one of the comb-shaped electrodes and connected to the input terminal IN. At the same time, the other comb-shaped electrodes are respectively grounded. Furthermore, the central IDT electrode 3
One of the two comb electrodes is connected to the output terminal OUT, and the other comb electrode is grounded to form a dual mode SAW filter.

【0004】図9に示す二重モードSAWフィルタの入
力端子INに高周波電圧を印加すると、反射器35a、
35b間に複数のモードが閉じ込められ、そのうちID
T電極パターンを適切に設定することにより1次と3次
の縦モードが強勢に励振され、この2つのモードを利用
した二重モードSAWフィルタとして機能する。周知の
ように、二重モードSAWフィルタの帯域幅は2つのモ
ードの周波数間隔に依存する。
When a high frequency voltage is applied to the input terminal IN of the dual mode SAW filter shown in FIG.
Multiple modes are confined between 35b, of which ID
By properly setting the T electrode pattern, the first and third longitudinal modes are strongly excited, and function as a dual mode SAW filter using these two modes. As is well known, the bandwidth of a dual mode SAW filter depends on the frequency spacing of the two modes.

【0005】図10(a)は二重モードSAWフィルタ
を用いて、RX2帯(870MHz〜885MHz)用RFフィルタ
を構成すべく、圧電基板31に36゜Y-X LiTaO3を用い、
中央のIDT電極32を31.5対、外側のIDT電極3
3、34を21.5対、交差幅を30λ(λは励起される表面
波の波長)、アルミニウム合金の電極膜厚を170nmとし
たときの二重モードSAWフィルタのフィルタ特性を示
す図で、図中のPは通過域の規格(2.5dBで870MHz〜885
MHz以上)、Qは減衰域の規格(893MHz〜898MHzで10dB
以上)を表している。図10(b)、(c)は上記フィ
ルタの入力側、出力側をそれぞれ50Ωにて終端したと
きのスミスチャートである。図10(a)から明らかな
ように試作品については減衰規格Qを辛うじて満たして
いるものの、製造バラツキを考慮すると量産する場合に
は歩留まりが大幅に悪化するという問題があった。
[0005] FIG. 10A shows a dual-mode SAW filter, in which a 36 ° YX LiTaO 3 is used for a piezoelectric substrate 31 to constitute an RF filter for the RX2 band (870 MHz to 885 MHz).
31.5 pairs of central IDT electrodes 32 and outer IDT electrodes 3
FIG. 4 is a diagram showing filter characteristics of a dual mode SAW filter when 21.5 pairs of 3 and 34 are used, the intersection width is 30λ (λ is the wavelength of the surface acoustic wave to be excited), and the electrode thickness of the aluminum alloy is 170 nm. P is the passband standard (870 MHz to 885 at 2.5 dB)
MHz), Q is the attenuation band standard (10dB from 893MHz to 898MHz)
Above). FIGS. 10B and 10C are Smith charts when the input side and the output side of the filter are respectively terminated with 50Ω. As apparent from FIG. 10 (a), although the prototype satisfies the attenuation standard Q barely, there is a problem that the yield significantly deteriorates when mass-produced in consideration of manufacturing variations.

【0006】そこで、図11に示すように二重モードS
AWフィルタFに直列にSAW共振子Rを接続し、該共
振子Rの共振周波数を二重モードSAWフィルタFの通
過域内に、反共振周波数を通過帯域近傍の高周波側に配
置し、該反共振を利用して通過域近傍の高域側に減衰極
を形成し、減衰量を改善する複合弾性表面波フィルタ
(以下、複合SAWフィルタと称す)が提案されてい
る。つまり、図11に示すように、二重モードSAWフ
ィルタFを形成した基板31上に、互いに間挿し合う複
数の電極指を有する一対のくし形電極からなるIDT電
極36と、その両側に反射器37a、37bを配置して
形成されるSAW共振子Rを並置し、二重モードSAW
フィルタFの外側のIDT電極33、34の圧電基板3
1中央寄りのくし形電極からそれぞれリード電極を延在
し、SAW共振子Rの圧電基板31中央寄りのくし形電
極と接続し、他方のくし形電極を入力端子INとに接続
して複合SAWフィルタを構成する。
Therefore, as shown in FIG.
A SAW resonator R is connected in series to the AW filter F, and the resonance frequency of the resonator R is arranged in the pass band of the dual mode SAW filter F, and the anti-resonance frequency is arranged on the high frequency side near the pass band. A composite surface acoustic wave filter (hereinafter, referred to as a composite SAW filter) has been proposed in which an attenuation pole is formed on the high frequency side near the passband by using the filter to improve the attenuation. That is, as shown in FIG. 11, on a substrate 31 on which a dual mode SAW filter F is formed, an IDT electrode 36 composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interposed therebetween, and reflectors on both sides thereof The SAW resonators R formed by arranging 37a and 37b are juxtaposed to form a dual mode SAW.
Piezoelectric substrate 3 of IDT electrodes 33 and 34 outside filter F
A lead electrode extends from each of the comb-shaped electrodes closer to the center, and is connected to the comb-shaped electrode closer to the center of the piezoelectric substrate 31 of the SAW resonator R, and the other comb-shaped electrode is connected to the input terminal IN to form a composite SAW. Configure filters.

【0007】図12(a)は図11に示した複合SAW
フィルタの電極パターンを用いて、RX2帯(870MHz〜
885 MHz)用RFフィルタを構成すべく、圧電基板31
に36゜Y-X LiTaO3を用い、二重モードSAWフィルタF
の中央のIDT電極32を31.5対、外側のIDT電極3
3、34を21.5対、交差幅を30λ(λは励起される表面
波の波長)、アルミニウム合金の電極膜厚を170nmと
し、SAW共振子RのIDT電極36の対数を100.5
対、交差幅を20λ、アルミニウム合金の電極膜厚を170n
mとして構成した複合SAWフィルタのフィルタ特性を
示す図であり、同図(b)、(c)はそれぞれ入力側及
び出力側を50Ωにて終端した場合のスミスチャートで
ある。図12(a)から明らかなように通過域近傍の高
域側の減衰量が大幅に増大し、減衰規格Qを十分に満た
すことができる。
FIG. 12A shows the composite SAW shown in FIG.
Using the electrode pattern of the filter, RX2 band (870MHz ~
885 MHz) to form an RF filter.
Double-mode SAW filter F using 36 ゜ YX LiTaO 3
31.5 pairs of the central IDT electrode 32 and the outer IDT electrode 3
3 and 34 are 21.5 pairs, the intersection width is 30λ (λ is the wavelength of the surface acoustic wave to be excited), the electrode thickness of the aluminum alloy is 170 nm, and the logarithm of the IDT electrode 36 of the SAW resonator R is 100.5.
Pair, cross width 20λ, electrode thickness of aluminum alloy 170n
It is a figure which shows the filter characteristic of the compound SAW filter comprised as m, (b) and (c) are the Smith charts when the input side and the output side are respectively terminated by 50 (ohm). As is clear from FIG. 12A, the attenuation on the high frequency side near the pass band is greatly increased, and the attenuation standard Q can be sufficiently satisfied.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上記の
図11に示すような複合SAWフィルタを用いてRX2
帯のRFフィルタを構成すると、図12(a)から明ら
かなように、パスバンド内高域側端におけるカットオフ
特性が著しく劣化し、試作においては辛うじて規格Pを
満足しているものの、製造バラツキを考慮すると不良品
となることも少なくないという問題があった。これは図
12(b)、(c)のスミスチャートからも明らかであ
る。このように、二重モードSAWフィルタにSAW共
振子を直列接続したタイプの複合SAWフィルタを用い
ても、RX2帯(バンド幅15MHz)程度の比較的狭
い帯域幅の複合SAWフィルタを量産する際に歩留まり
が著しく悪くなるという問題があった。本発明は上記問
題を解決するためになされたものであって、パスバンド
を平坦にすると共に通過域近傍の高域側の減衰量を改善
した弾性表面波フィルタを提供することを目的とする。
However, using a composite SAW filter as shown in FIG.
As shown in FIG. 12 (a), when the band-pass RF filter is configured, the cutoff characteristic at the high-frequency end in the pass band is significantly deteriorated, and the prototype slightly satisfies the standard P. In consideration of the above, there is a problem that the product often becomes defective. This is clear from the Smith charts of FIGS. 12 (b) and 12 (c). Thus, even when a composite SAW filter of a type in which a SAW resonator is connected in series to a dual mode SAW filter is used, mass production of a composite SAW filter having a relatively narrow bandwidth of about RX2 band (bandwidth 15 MHz) is required. There is a problem that the yield is significantly deteriorated. SUMMARY OF THE INVENTION The present invention has been made to solve the above problem, and has as its object to provide a surface acoustic wave filter having a flat passband and an improved attenuation in a high frequency side near a passband.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
に本発明に係る複合弾性表面波フィルタの請求項1記載
の発明は、圧電基板の主面上に設けた弾性表面波フィル
タの一方の端子と、弾性表面波共振子の一方の端子とを
直列に接続すると共に、この接続点に容量を並列接続し
たことを特徴とする複合弾性表面波フィルタである。請
求項2記載の発明は、圧電基板の主面上に設けた弾性表
面波フィルタの一方の端子と、弾性表面波共振子の一方
の端子とを直列に接続すると共に、この接続点に容量を
並列接続すると共に、前記弾性表面波フィルタの他方の
端子に容量を並列接続したことを特徴とする複合弾性表
面波フィルタである。請求項3記載の発明は、前記容量
を圧電基板上に形成したIDT電極にて実現したことを
特徴とする請求項1あるいは2記載の複合弾性表面波フ
ィルタである。請求項4記載の発明は、前記弾性表面波
フィルタが表面波の伝搬方向に沿って、3つのIDT電
極とその両側にグレーティング反射器を配置してなる1
次−3次縦結合二重モード型フィルタであり、前記弾性
表面波共振子がIDT電極とその両側にグレーティング
反射器を配置したものであることを特徴とする請求項1
乃至3に記載の複合弾性表面波フィルタである。
According to a first aspect of the present invention, there is provided a composite surface acoustic wave filter according to the present invention, wherein one of the surface acoustic wave filters provided on a main surface of a piezoelectric substrate is provided. A composite surface acoustic wave filter characterized in that a terminal and one terminal of a surface acoustic wave resonator are connected in series, and a capacitance is connected in parallel at this connection point. According to a second aspect of the present invention, one terminal of the surface acoustic wave filter provided on the main surface of the piezoelectric substrate and one terminal of the surface acoustic wave resonator are connected in series, and a capacitance is connected to this connection point. A composite surface acoustic wave filter in which a capacitor is connected in parallel and a capacitor is connected in parallel to the other terminal of the surface acoustic wave filter. The invention according to claim 3 is the composite surface acoustic wave filter according to claim 1 or 2, wherein the capacitor is realized by an IDT electrode formed on a piezoelectric substrate. According to a fourth aspect of the present invention, the surface acoustic wave filter has three IDT electrodes and grating reflectors arranged on both sides thereof along the propagation direction of the surface acoustic wave.
2. A next-order / third-order longitudinally-coupled dual-mode filter, wherein the surface acoustic wave resonator includes an IDT electrode and grating reflectors on both sides thereof.
4. The composite surface acoustic wave filter according to any one of Items 1 to 3.

【0010】[0010]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1は本発明に係る複
合SAWフィルタの構成を示す平面図であって、圧電基
板1の主面上に表面波の伝搬方向に沿って、3つのID
T電極とその両側にグレーティング反射器を配置してな
る1次−3次縦結合二重モード弾性表面波フィルタ(二
重モードSAWフィルタ)2と、IDT電極とその両側
にグレーティング反射器を配置してなる弾性表面波共振
子(SAW共振子)3と、表面波の伝搬方向にほぼ直交
してコンデンサ用IDT電極4とを形成し、二重モード
SAWフィルタ2の外側に配置した2つのIDT電極の
圧電基板1中央寄りのくし形電極からそれぞれリード電
極を延在し、SAW共振子3の圧電基板1中央寄りのく
し形電極と直列に接続すると共に、前記リード電極にコ
ンデンサ用IDT電極4を並列接続する。さらに、SA
W共振子3の圧電基板1端部寄りのくし形電極と入力端
子INとをボンディングワイヤ等にて接続すると共に、
二重モードSAWフィルタの中央に配置したIDT電極
の圧電基板1端部寄りのくし形電極と出力端子OUTと
をボンディングワイヤ等にて接続し、他方のくし形電極
をそれぞれ接地して、複合SAWフィルタを構成する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1 is a plan view showing a configuration of a composite SAW filter according to the present invention, in which three IDs are provided on a main surface of a piezoelectric substrate 1 along a propagation direction of a surface wave.
A first-order to third-order longitudinally-coupled double-mode surface acoustic wave filter (double-mode SAW filter) 2 having a T electrode and grating reflectors on both sides thereof, and a grating reflector disposed on an IDT electrode and both sides thereof; Surface acoustic wave resonator (SAW resonator) 3 and an IDT electrode 4 for a capacitor substantially orthogonal to the propagation direction of the surface acoustic wave, and two IDT electrodes arranged outside the dual mode SAW filter 2. The lead electrodes extend from the comb-shaped electrodes near the center of the piezoelectric substrate 1 and are connected in series with the comb-shaped electrodes near the center of the piezoelectric substrate 1 of the SAW resonator 3, and the capacitor IDT electrodes 4 are connected to the lead electrodes. Connect in parallel. Furthermore, SA
The comb-shaped electrode of the W resonator 3 near the end of the piezoelectric substrate 1 is connected to the input terminal IN with a bonding wire or the like.
A comb-shaped electrode near the end of the piezoelectric substrate 1 of the IDT electrode arranged at the center of the dual-mode SAW filter and the output terminal OUT are connected by a bonding wire or the like, and the other comb-shaped electrode is grounded, respectively. Configure filters.

【0011】図2(a)は、図1の複合SAWフィルタ
の電極パターンを用いて、RX2帯用RFフィルタを構
成すべく、圧電基板1に36゜Y-X LiTaO3を用い、二重モ
ードSAWフィルタ2の中央のIDT電極を31.5対、外
側の2つのIDT電極を21.5対、交差幅を30λ(λは励
起される表面の波長)、アルミニウム合金の電極膜厚を
170nmとし、SAW共振子3のIDT電極対数を100.5
対、交差幅を20λ、コンデンサ用IDT電極4の対数を
36対、交差幅を73μm(容量にして1.2pF)として構成し
た複合SAWフィルタの通過域特性を示す図であり、通
過域規格P及び通過域近傍の高域側の減衰規格Q共に十
分に満たしていることが分かる。同図(b)、(c)は
複合SAWフィルタを50Ωにて終端した場合の入力側
及び出力側のスミスチャートで、円線図がフィルタの通
過域近傍で50Ω近傍をトレースしていることが分か
る。
FIG. 2 (a) shows a dual mode SAW filter using 36 ゜ YX LiTaO 3 for the piezoelectric substrate 1 to form an RX 2-band RF filter using the electrode pattern of the composite SAW filter of FIG. The center IDT electrode 2 has 31.5 pairs, the outer two IDT electrodes 21.5 pairs, the intersection width is 30λ (λ is the wavelength of the surface to be excited), and the electrode thickness of the aluminum alloy is
170 nm, and the number of IDT electrode pairs of the SAW resonator 3 is 100.5.
Pair, intersection width is 20λ, and log of IDT electrode 4 for capacitor is
FIG. 13 is a diagram showing passband characteristics of a composite SAW filter having a cross width of 73 μm (capacitance: 1.2 pF), which satisfies both a passband standard P and a high-band attenuation standard Q near the passband. You can see that it is. FIGS. 7B and 7C are Smith charts on the input side and output side when the composite SAW filter is terminated with 50Ω. The circle diagram traces the vicinity of 50Ω near the pass band of the filter. I understand.

【0012】本発明の特徴は二重モードSAWフィルタ
に直列にSAW共振子を接続すると共に、その段間に容
量を並列接続することにより、終端抵抗50Ωとのイン
ピーダンス整合を図り、パスバンド、特に通過域内の高
域側のカットオフ特性を急峻にしたことにある。
A feature of the present invention is that a SAW resonator is connected in series to a dual mode SAW filter, and a capacitor is connected in parallel between the stages to achieve impedance matching with a terminating resistor of 50Ω, and to provide a pass band, especially This is to sharpen the cutoff characteristic on the high frequency side in the passband.

【0013】図3は本発明に係る第2の実施例であっ
て、図1と異なるところは二重モードSAWフィルタ2
の圧電基板1端部寄りのくし形電極からリード電極を延
在し、該リードと出力端子OUTとを接続すると共に、
該リード電極に圧電基板1上に形成したコンデンサ用I
DT電極5を並列接続したことである。図4(a)は図
3に示した電極パターンを用いて、RX2帯用RFフィ
ルタを構成すべく、圧電基板1に36゜Y-X LiTaO3を用
い、二重モードSAWフィルタ2の中央のIDT電極を
31.5対、外側の2つのIDT電極を21.5対、交差幅を30
λ(λは励起される表面波の波長)、アルミニウム合金
の電極膜厚を170nmとし、SAW共振子3のIDT電極
対数を100.5対、交差幅を20λ、コンデンサ用IDT電
極4の対数を36対、交差幅を73μm(容量にして1.2p
F)、コンデンサ用IDT電極5の対数を12対、交差幅
を73μm(容量にして0.4pF)として、構成した複合SA
Wフィルタの通過域特性を示す図であり、図2に示した
フィルタ特性より通過域内高域のカットオフ特性が改善
されていることが分かる。これは図4(b)、(c)に
示した入力側及び出力側のスミスチャートと、図2のそ
れとを比較することにより明快である。
FIG. 3 shows a second embodiment according to the present invention. The difference from FIG.
A lead electrode extends from the comb-shaped electrode near the end of the piezoelectric substrate 1 and connects the lead to the output terminal OUT.
A capacitor I formed on the piezoelectric substrate 1 is connected to the lead electrode.
That is, the DT electrodes 5 are connected in parallel. FIG. 4 (a) shows the use of the electrode pattern shown in FIG. 3 to form an RF filter for the RX2 band, using 36 ° YX LiTaO 3 for the piezoelectric substrate 1 and the IDT electrode at the center of the dual mode SAW filter 2. To
31.5 pairs, 21.5 pairs of outer two IDT electrodes, cross width 30
λ (λ is the wavelength of the surface acoustic wave to be excited), the electrode thickness of the aluminum alloy is 170 nm, the number of IDT electrodes of the SAW resonator 3 is 100.5, the cross width is 20λ, and the number of IDT electrodes 4 for capacitors is 36. , Crossing width 73μm (1.2p in capacity)
F), a composite SA having 12 pairs of IDT electrodes 5 for capacitors and a cross width of 73 μm (0.4 pF in capacitance)
FIG. 3 is a diagram illustrating passband characteristics of a W filter, and it can be seen that the cutoff characteristics in the high band within the passband are improved from the filter characteristics illustrated in FIG. 2. This is clear by comparing the input side and output side Smith charts shown in FIGS. 4B and 4C with those of FIG.

【0014】図5は本発明に係る第3の実施例であっ
て、図3に示した第2の実施例と異なるところは、入力
側にさらにSAW共振子6を直列に接続したところであ
る。第3の発明の特徴は、SAW共振子3、6を2個直
列接続することにより、該SAW共振子の反共振周波数
を利用してフィルタの減衰特性を改善することであり、
反共振周波数を同一にしてもよいし、少し離して配置し
てもよい。ただし、それぞれのSAW共振子の共振周波
数は帯域の中央に配置することが望ましい。図6(a)
は図5の電極パターンを用いて、RX2帯用RFフィル
タを構成すべく、圧電基板1に36゜Y-X LiTaO3を用い、
二重モードSAWフィルタ2の中央のIDT電極を31.5
対、外側の2つのIDT電極を21.5対、交差幅を30λ
(λは励起される表面の波長)、アルミニウム合金の電
極膜厚を170nmとし、SAW共振子3のIDT電極対数
を100.5対、交差幅を20λ、SAW共振子6のIDT電
極対数を100.5対、交差幅を10λ、コンデンサ用IDT
電極4の対数を36対、交差幅を73μm(容量にして1.2p
F)、コンデンサ用IDT電極5の対数を12対、交差幅
を73μm(容量にして0.4pF)として、構成した複合SA
Wフィルタの通過域特性を示す図であり、曲線Aはパス
バンド特性、曲線Bは減衰特性である。通過帯域のリッ
プルは0.5dB程度で、通過域高周波端のカットオフ特性
も急峻で、減衰域もスプリアスを十分に抑圧しているこ
とが分かる。図6(b)は出力側のスミスチャートであ
り、フィルタのパスバンド付近で円線図は50Ω近傍を
トレースしていることが分かる。
FIG. 5 shows a third embodiment according to the present invention. The difference from the second embodiment shown in FIG. 3 is that a SAW resonator 6 is further connected in series on the input side. A feature of the third invention is that by connecting two SAW resonators 3 and 6 in series, the attenuation characteristic of the filter is improved using the anti-resonance frequency of the SAW resonator.
The anti-resonance frequencies may be the same, or they may be arranged slightly apart. However, it is desirable that the resonance frequency of each SAW resonator be located at the center of the band. FIG. 6 (a)
Uses 36 電極 YX LiTaO 3 for the piezoelectric substrate 1 to constitute an RF filter for the RX2 band using the electrode pattern of FIG.
The center IDT electrode of the dual mode SAW filter 2 is 31.5
Pair, 21.5 pairs of outer two IDT electrodes, cross width 30λ
(Λ is the wavelength of the surface to be excited), the electrode thickness of the aluminum alloy is 170 nm, the number of IDT electrode pairs of the SAW resonator 3 is 100.5, the cross width is 20λ, the number of IDT electrode pairs of the SAW resonator 6 is 100.5, Intersection width 10λ, IDT for capacitors
The number of electrodes 4 is 36 pairs, and the cross width is 73 μm (1.2 p
F), a composite SA having 12 pairs of IDT electrodes 5 for capacitors and a cross width of 73 μm (0.4 pF in capacitance)
FIG. 4 is a diagram illustrating passband characteristics of a W filter, wherein a curve A is a passband characteristic and a curve B is an attenuation characteristic. It can be seen that the ripple in the pass band is about 0.5 dB, the cutoff characteristic at the high frequency end of the pass band is steep, and the attenuation band sufficiently suppresses spurious. FIG. 6B is a Smith chart on the output side, and it can be seen that the circle diagram traces around 50Ω near the pass band of the filter.

【0015】図7はPDCシステムに用いられる1入力
−2出力の受信用RFフィルタの一例で、1つのパッケ
ージ11にRX1帯用RFフィルタ12及びRX2帯用
RFフィルタ13の2個のフィルタを搭載した例であ
る。RX1帯用RFフィルタのように比較的広い(帯域
幅33MHz)フィルタでは、二重モードSAWフィル
タに直列にSAW共振子を接続しても通過域高域端のカ
ットオフ特性はほとんど劣化しないため、段間および出
力端に容量を設ける必要はない。これに対し、RX2帯
のように帯域が比較的狭い(帯域幅15MHz)場合に
本発明が有効であることが実験的に判明した。
FIG. 7 shows an example of a one-input / two-output reception RF filter used in a PDC system, in which one package 11 has two filters, an RX1 band RF filter 12 and an RX2 band RF filter 13. This is an example. In a relatively wide filter (bandwidth of 33 MHz) such as an RX1 band RF filter, even if a SAW resonator is connected in series to a dual-mode SAW filter, the cutoff characteristic at the upper end of the passband hardly deteriorates. There is no need to provide capacitance between stages and at the output end. On the other hand, it has been experimentally found that the present invention is effective when the band is relatively narrow (bandwidth 15 MHz) such as the RX2 band.

【0016】以上では二重モードSAWフィルタとSA
W共振子との段間にIDT電極からなる容量を並列接続
して通過帯域の端のカットオフ特性を改善したが、必ず
しもコンデンサ用IDT電極である必要はなく、インピ
ーダンスの整合に適した容量であれば、他の電極パター
ンであってもよいし、チップ型容量等の素子を用いても
よい。また、圧電基板に36゜Y-X LiTaO3を用いた例を示
したが、他の切断角度、例えば36゜から42゜であっても
よい。また、圧電基板としてはニオブ酸リチウム、四硼
酸リチウム、ランガサイト等の他の圧電基板に適用する
ことができることは説明するまでもない。上記の実施例
では1次−3次の二重モードSAWフィルタの外側ID
T電極から延びる入出力端に共振子を接続したが、若
干、リップルが大きくなるものの出力側に共振子を接続
しても同様の効果を奏する。
In the above, the dual mode SAW filter and the SA
The cut-off characteristic at the end of the pass band is improved by connecting a capacitor composed of an IDT electrode in parallel between the stage and the W resonator. However, the cut-off characteristic at the end of the pass band is not necessarily required, and the capacitor is suitable for impedance matching. If so, another electrode pattern may be used, or an element such as a chip-type capacitor may be used. Also, an example in which 36 ° YX LiTaO 3 is used for the piezoelectric substrate has been described, but another cutting angle, for example, 36 ° to 42 ° may be used. Needless to say, the present invention can be applied to other piezoelectric substrates such as lithium niobate, lithium tetraborate, and langasite as the piezoelectric substrate. In the above embodiment, the outer ID of the primary-tertiary dual mode SAW filter
Although the resonator is connected to the input / output end extending from the T electrode, the same effect can be obtained even if the resonator is connected to the output side although the ripple is slightly increased.

【0017】[0017]

【発明の効果】本発明は、以上説明したように構成した
ので、請求項1及び2の発明では複合SAWフィルタの
通過域高域端のカットオフ特性と、通過域近傍の高周波
側の減衰量とを改善できるという優れた効果を奏する。
請求項3の発明では必要とする容量を同一圧電基板に設
けたIDT電極で形成しているので、小型化と同時にマ
スクをほぼ同一工程で製作できるという効果を奏する。
請求項4の発明では弾性表面波フィルタを1次−3次縦
結合二重モードSAWフィルタで実現し、共振子をID
T電極とその両側に配置したグレーティング反射器にて
実現している。
According to the present invention, the cutoff characteristics at the high-pass end of the composite SAW filter and the attenuation on the high-frequency side near the passband are provided in the first and second aspects of the present invention. And an excellent effect that it can be improved.
According to the third aspect of the present invention, since the required capacitance is formed by the IDT electrode provided on the same piezoelectric substrate, there is an effect that the mask can be manufactured in substantially the same process at the same time as the size reduction.
According to a fourth aspect of the present invention, the surface acoustic wave filter is realized by a primary-tertiary longitudinally-coupled dual-mode SAW filter, and the resonator is an ID.
This is realized by a T electrode and grating reflectors arranged on both sides of the T electrode.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る複合SAWフィルタの構成を示す
平面図である。
FIG. 1 is a plan view showing a configuration of a composite SAW filter according to the present invention.

【図2】(a)は本発明に係る複合SAWフィルタの通
過域特性、(b)、(c)はそれぞれ入力側及び出力側
のスミスチャートである。
FIG. 2 (a) is a passband characteristic of the composite SAW filter according to the present invention, and FIGS. 2 (b) and (c) are Smith charts on the input side and the output side, respectively.

【図3】第2の発明に係る複合SAWフィルタの構成を
示す平面図である。
FIG. 3 is a plan view showing a configuration of a composite SAW filter according to a second invention.

【図4】(a)は第2の発明に係る複合SAWフィルタ
の通過域特性、(b)、(c)はそれぞれ入力側及び出
力側のスミスチャートである。
FIG. 4A is a passband characteristic of the composite SAW filter according to the second invention, and FIGS. 4B and 4C are Smith charts on the input side and the output side, respectively.

【図5】第3の発明に係る複合SAWフィルタの構成を
示す平面図である。
FIG. 5 is a plan view showing a configuration of a composite SAW filter according to a third invention.

【図6】(a)は第3の発明に係る複合SAWフィルタ
のフィルタ特性、(b)はスミスチャートである。
FIG. 6A is a filter characteristic of a composite SAW filter according to the third invention, and FIG. 6B is a Smith chart.

【図7】RX1帯(810MHz〜843MHz)用RFフィルタ及
びRX2帯(870MHz〜885MHz)用RFフィルタを実装し
たPDC用RFフィルタの一例である。
FIG. 7 is an example of an RF filter for a PDC mounted with an RF filter for an RX1 band (810 MHz to 843 MHz) and an RF filter for an RX2 band (870 MHz to 885 MHz).

【図8】PDC携帯電話システムの周波数割り当てを示
す図である。
FIG. 8 is a diagram showing frequency allocation of the PDC mobile phone system.

【図9】従来の1次−3次縦結合二重モードSAWフィ
ルタの構成を示す図である。
FIG. 9 is a diagram showing a configuration of a conventional first-order to third-order longitudinally coupled dual-mode SAW filter.

【図10】(a)は従来の1次−3次縦結合二重モード
SAWフィルタのフィルタ特性を示す図、(b)、
(c)はそれぞれ入力側及び出力側におけるスミスチャ
ートである。
10A is a diagram showing the filter characteristics of a conventional primary-tertiary-order longitudinally coupled dual-mode SAW filter, FIG.
(C) is a Smith chart on the input side and the output side, respectively.

【図11】1次−3次縦結合二重モードSAWフィルタ
に直列にSAW共振子を接続した従来の複合SAWフィ
ルタである。
FIG. 11 shows a conventional composite SAW filter in which a SAW resonator is connected in series to a primary-tertiary-order longitudinally coupled dual-mode SAW filter.

【図12】(a)は図11の複合SAWフィルタのフィ
ルタ特性を示す図、(b)、(c)はそれぞれ入力側及
び出力側におけるスミスチャートである。
12A is a diagram showing the filter characteristics of the composite SAW filter of FIG. 11, and FIGS. 12B and 12C are Smith charts on the input side and the output side, respectively.

【符号の説明】[Explanation of symbols]

1・・圧電基板 2・・1次−3次縦結合二重モードSAWフィルタ 3、6・・SAW共振子 4、5・・コンデンサ用IDT電極 A・・フィルタの通過域特性 B・・フィルタの減衰域特性 1. Piezoelectric substrate 2. First-order / third-order longitudinally-coupled dual-mode SAW filter 3, 6, SAW resonator 4, 5, IDT electrode for capacitor A. Pass-band characteristic of filter B. Filter Attenuation characteristics

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板の主面上に設けた弾性表面波フ
ィルタの一方の端子と、弾性表面波共振子の一方の端子
とを直列に接続すると共に、この接続点に容量を並列接
続したことを特徴とする複合弾性表面波フィルタ。
1. One terminal of a surface acoustic wave filter provided on a main surface of a piezoelectric substrate and one terminal of a surface acoustic wave resonator are connected in series, and a capacitor is connected in parallel at this connection point. A composite surface acoustic wave filter characterized by the above-mentioned.
【請求項2】 圧電基板の主面上に設けた弾性表面波フ
ィルタの一方の端子と、弾性表面波共振子の一方の端子
とを直列に接続すると共に、この接続点に容量を並列接
続すると共に、前記弾性表面波フィルタの他方の端子に
容量を並列接続したことを特徴とする複合弾性表面波フ
ィルタ。
2. One terminal of a surface acoustic wave filter provided on the main surface of a piezoelectric substrate and one terminal of a surface acoustic wave resonator are connected in series, and a capacitor is connected in parallel to this connection point. And a capacitor connected in parallel to the other terminal of the surface acoustic wave filter.
【請求項3】 前記容量を圧電基板上に形成したIDT
電極にて実現したことを特徴とする請求項1あるいは2
記載の複合弾性表面波フィルタ。
3. An IDT wherein the capacitor is formed on a piezoelectric substrate.
3. The method according to claim 1, wherein the electrode is realized by an electrode.
A composite surface acoustic wave filter according to claim 1.
【請求項4】 前記弾性表面波フィルタが表面波の伝搬
方向に沿って、3つのIDT電極とその両側にグレーテ
ィング反射器を配置してなる1次−3次縦結合二重モー
ド型フィルタであり、前記弾性表面波共振子がIDT電
極とその両側にグレーティング反射器を配置したもので
あることを特徴とする請求項1乃至3に記載の複合弾性
表面波フィルタ。
4. A first-order third-order longitudinally-coupled dual-mode filter in which the surface acoustic wave filter has three IDT electrodes and grating reflectors on both sides thereof along the propagation direction of the surface acoustic wave. 4. The composite surface acoustic wave filter according to claim 1, wherein said surface acoustic wave resonator comprises an IDT electrode and grating reflectors disposed on both sides thereof.
JP2000249238A 2000-08-21 2000-08-21 Compound surface acoustic wave filter Pending JP2002064358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
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Family

ID=18739009

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2002064358A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6556100B2 (en) 2000-08-31 2003-04-29 Murata Manufacturing Co., Ltd. Surface acoustic wave filter with a passband formed by a longitudinally coupled filter and a resonator inductance
KR100819951B1 (en) * 2006-04-14 2008-04-07 비오이 하이디스 테크놀로지 주식회사 OCB mode liquid crystal display
WO2008067793A1 (en) * 2006-12-05 2008-06-12 Epcos Ag Dms filter with improved matching
US7623009B2 (en) 2005-07-13 2009-11-24 Murata Manufacturing Co., Ltd. Boundary acoustic wave filter device
JP2011044765A (en) * 2009-08-19 2011-03-03 Panasonic Corp Surface acoustic wave device
JP2011086997A (en) * 2009-10-13 2011-04-28 Panasonic Corp Elastic wave device
JP2012533252A (en) * 2009-07-13 2012-12-20 エプコス アーゲー SAW filter circuit with enhanced ESD tolerance
US11329627B2 (en) 2019-06-28 2022-05-10 Murata Manufacturing Co., Ltd. Filter and multiplexer

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6556100B2 (en) 2000-08-31 2003-04-29 Murata Manufacturing Co., Ltd. Surface acoustic wave filter with a passband formed by a longitudinally coupled filter and a resonator inductance
US7623009B2 (en) 2005-07-13 2009-11-24 Murata Manufacturing Co., Ltd. Boundary acoustic wave filter device
KR100819951B1 (en) * 2006-04-14 2008-04-07 비오이 하이디스 테크놀로지 주식회사 OCB mode liquid crystal display
US7915975B2 (en) 2006-12-05 2011-03-29 Epcos Ag DMS filter with improved matching
JP2010512077A (en) * 2006-12-05 2010-04-15 エプコス アクチエンゲゼルシャフト DMS filter with improved matching
WO2008067793A1 (en) * 2006-12-05 2008-06-12 Epcos Ag Dms filter with improved matching
KR101382070B1 (en) * 2006-12-05 2014-04-04 에프코스 아게 Dms filter with improved matching
DE102006057340B4 (en) * 2006-12-05 2014-05-22 Epcos Ag DMS filter with improved adaptation
JP2012533252A (en) * 2009-07-13 2012-12-20 エプコス アーゲー SAW filter circuit with enhanced ESD tolerance
US9035726B2 (en) 2009-07-13 2015-05-19 Epcos Ag SAW filter circuit having improved ESD resistance
JP2011044765A (en) * 2009-08-19 2011-03-03 Panasonic Corp Surface acoustic wave device
JP2011086997A (en) * 2009-10-13 2011-04-28 Panasonic Corp Elastic wave device
US11329627B2 (en) 2019-06-28 2022-05-10 Murata Manufacturing Co., Ltd. Filter and multiplexer

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