JP2002064077A - Semiconductor manufacturing apparatus and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect invasion of an etching solution from a crack in a semiconductor wafer into a chuck of a spin etching apparatus (wet etching apparatus) and automatically stop operation of the spin etching apparatus. SOLUTION: A sensor 16 for detecting invasion of an etching solution into a stage 15 is provided at an outermost periphery of a stage 15 forming a chuck and having a semiconductor wafer mounted thereon. Within the stage 15, a transmitter 17 for receiving a signal indicative of the invasion of the etching solution from the sensor 16, converting the signal into an electric signal to control a wet etching apparatus, and transmitting the electric signal to control operation of the wet etching apparatus, is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device manufacturing technique, and more particularly to a technique effective when applied to an etching technique using a wet etching apparatus.

[0002]

2. Description of the Related Art In a wet etching method, a chemical is used to dissolve and remove a solid by utilizing a chemical reaction at a liquid-solid interface. Since the etching is performed by immersing the material to be etched in the etching solution, the shape and size of the material to be etched are not limited, and the etching method is excellent in mass productivity and versatility. Further, since the etching mechanism is based on the chemical reaction rule, high material selectivity without physical impact can be obtained. Therefore, the etching rate is increased, which is effective when applied to transfer of a wiring pattern using an etching mask, surface cleaning, removal of a surface layer of a multilayer film, and the like.

In the wet etching method, a basic etching reaction mechanism is an oxidation-reduction reaction at a contact surface between an etching solution and a material to be etched. Therefore, the etching rate is generally proportional to the concentration of reactive ions in the etching solution, and depends exponentially on the temperature. Therefore, the etching rate can be controlled in a wide range from about several tens of degrees per minute to about several μm per minute or more.

[0004] The relationship between the material to be etched and the corresponding etchant, and various wet etching systems are described in, for example, (a) 1999.
Published by Nikkan Kogyo Shimbun Co., Ltd. on March 20, 1998, "Semiconductor Dictionary", pp. 248, (b) November 2, 1997
On the 0th, Nikkan Kogyo Shimbun Co., Ltd., "Semiconductor Manufacturing Equipment Glossary", pp. 239, etc. are described.

[0005]

In the above-mentioned wet etching method, the semiconductor wafer is held by vacuum chucking the chuck, and while the chuck is rotated, an etching solution is applied to the semiconductor wafer from above the semiconductor wafer. In some cases, a spin-etching apparatus that performs etching by applying a pressure is used. However, the present inventor has found that there is the following problem when wet etching is performed using this spin etching apparatus.

That is, in the case where wet etching is performed using a spin etching apparatus, if a crack is present in a semiconductor wafer held by a chuck, an etching solution permeates into the crack. Subsequently, the etchant that has infiltrated the cracks in the semiconductor wafer adheres to the chuck through the crack and contaminates the chuck. Since the semiconductor wafer is automatically loaded into the spin etching apparatus, the next semiconductor wafer is subjected to an etching process in a state where the chuck is contaminated with the etchant. That is, there is a problem that the etchant adheres from the chuck to the next semiconductor wafer on which the etching process is performed in a state where the chuck is contaminated with the etchant, and the semiconductor wafer is contaminated.

Further, since the loading of the semiconductor wafer into the spin etching apparatus is automatically performed, there is a problem that when the chuck is contaminated by the etching solution, the contamination cannot be detected instantaneously. Therefore, the spin etching apparatus continues to operate while the chuck is contaminated with the etchant, and there is a problem that the etchant adheres to a plurality of semiconductor wafers and becomes contaminated.

An object of the present invention is to provide a technique capable of detecting that an etchant has penetrated from a crack in a semiconductor wafer to a chuck of a spin etching apparatus.

Another object of the present invention is to provide a technique capable of preventing a semiconductor wafer contaminated by an etchant from flowing out.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0011]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the present invention is a semiconductor manufacturing apparatus which has a chuck for holding a semiconductor wafer and wet-etches the semiconductor wafer or a thin film deposited on the semiconductor wafer. (B) a part of the stage is provided with a sensor for detecting infiltration of an etching solution into a gap between the semiconductor wafer and the stage.

Further, the present invention is a semiconductor manufacturing apparatus which has a chuck for holding a semiconductor wafer and wet-etches the semiconductor wafer or a thin film deposited on the semiconductor wafer, wherein (a) the chuck is the semiconductor A stage for mounting a wafer, (b) a part of the stage, a sensor for detecting infiltration of an etching solution into a gap between the semiconductor wafer and the stage, and an operation of the semiconductor manufacturing apparatus; And a transmitter for transmitting an electric signal to be controlled.

The present invention also relates to a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus for wet-etching a semiconductor wafer or a thin film deposited on the semiconductor wafer, the method comprising: After the step of mounting the semiconductor wafer, and after the step of mounting the semiconductor wafer on the stage, the step of rotating the chuck, under the condition of rotating the chuck, adding an etchant to the semiconductor wafer Wet etching the semiconductor wafer or a thin film deposited on the semiconductor wafer, wherein when the etchant infiltrates into the gap between the semiconductor wafer and the stage, a part of the stage A sensor provided for detecting infiltration of the etching solution.

According to the present invention described above, a chuck of a semiconductor manufacturing apparatus is formed, and a sensor is installed on a part of a stage on which a semiconductor wafer is mounted, so that a crack generated in a semiconductor wafer is etched to a stage (chuck). It is possible to detect that the liquid has permeated.

Further, according to the present invention, a signal for detecting infiltration of an etching solution into a chuck of a semiconductor manufacturing apparatus from a crack generated in a semiconductor wafer is transmitted from a sensor to a transmitter provided inside the chuck. . Subsequently, the transmitter converts a signal that has detected the infiltration of the etchant into an electric signal that controls the semiconductor manufacturing apparatus. Subsequently, the transmitter emits an electric signal for controlling the operation of the semiconductor manufacturing apparatus. Therefore, when the etchant infiltrates the chuck of the semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus automatically operates according to the electric signal. The operation can be stopped.

Further, according to the present invention, when the etching liquid permeates into the chuck of the semiconductor manufacturing apparatus from the crack generated in the semiconductor wafer, the operation of the semiconductor manufacturing apparatus can be automatically stopped. It is possible to prevent a plurality of semiconductor wafers from being continuously loaded on the stage (chuck) contaminated by the etchant.

Further, according to the present invention, it is possible to prevent a plurality of semiconductor wafers from being continuously loaded on the stage (chuck) contaminated by the etching solution. It is possible to prevent the semiconductor wafer from flowing out.

Further, according to the present invention, it is possible to prevent the semiconductor wafer contaminated by the etchant from flowing out, thereby improving the quality, yield and reliability of the semiconductor device manufactured from the semiconductor wafer. It becomes possible.

[0020]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, members having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

The semiconductor manufacturing apparatus of the present embodiment is, for example, a spin etching apparatus (wet etching apparatus) as shown in FIG.

As shown in FIG. 1, a spin etching apparatus according to the present embodiment includes a spin motor 2, a chuck 3 connected to the spin motor 2, and an etching solution 5 added to a semiconductor wafer 4 in a main unit 1. A collecting tank 6 for collecting the semiconductor wafer 4, a loader 7 for transferring the semiconductor wafer 4 to the upper part of the chuck 3, an unloader 8 for transferring the semiconductor wafer 4 from the upper part of the chuck 3 after the etching step,
And a nozzle 9 for adding the etching solution 5 to the semiconductor wafer. When the semiconductor wafer 4 is transferred by the loader 7 and the unloader 8, the handler 10 is also used. Further, in the main unit 1, a receiver 11 for receiving a radio signal transmitted from a transmitter 17 described later with reference to FIG. 2 is arranged.

The semiconductor wafer 4 is vacuum-adsorbed to the chuck 3 by sending air through a tube 12.
This will be described later with reference to FIG.

FIG. 2 is an enlarged view of the chuck 3 shown in FIG. The chuck 3 is a semiconductor wafer 4
, A sensor 16 for detecting infiltration of an etching solution, a transmitter (including a transmission circuit) 17 provided inside the stage 15 and transmitting a detection signal sent from the sensor 16 to the receiver 11. Having.
The installation position of the sensor 16 and the principle of detecting the infiltration of the etching solution by the sensor 16 will be described later with reference to FIG.

The stage 15 has a semiconductor wafer 4
A groove 18 and a hole 19 are provided for vacuum suction. Since the operating power of the sensor 16 and the transmitter 17 is supplied from a battery (power supply (not shown)) installed inside the stage 15, even when the chuck 3 rotates during the etching process, the sensor 16 and the transmitter 17 are operated at the same time. It is possible to fulfill a function.

In the spin etching apparatus of the present embodiment shown in FIG. 1, the etching liquid 5 is added to the semiconductor wafer 4 from the nozzle 9 while the semiconductor wafer 4 and the chuck 3 rotate together. At this time, if a crack 20 as shown in FIG. 2 is formed in the semiconductor wafer 4 as shown in FIG. 2, the etchant 5 permeates into the crack 20. Further, the etchant 5 that has permeated into the crack 20 permeates into the stage 15.

As shown in FIG. 3A, the sensor 16
Is provided at the outermost peripheral portion of the surface of the stage 15, and has a ring shape. During the etching process, the chuck 3 rotates, and the centrifugal force generated by the rotation of the chuck 3 acts on the etchant 5 that has infiltrated the stage 15 and moves to the outer peripheral portion of the stage 5. As described above, since the sensor 16 is provided at the outermost periphery of the stage 15, it is possible to detect that the etching liquid 5 has reached the outermost periphery of the stage 15. That is,
It is possible to detect that the etchant 5 has penetrated the stage 15 from the crack 20 described above.

As shown in FIG. 3B in which the vicinity of the outer periphery of the stage 15 (around the sensor 16) is enlarged, the sensor 16 includes a first electrode 16a and a second electrode provided on the outer periphery of the first electrode. And an electrode 16b.

When the etchant 5 that has permeated the stage 15 reaches the second electrode 16b, the first electrode 16a and the second electrode 16b are electrically connected via the etchant 5. That is, the sensor 16 includes the first electrode 1
The conduction between 6a and the second electrode 16b makes it possible to detect penetration of the etching solution 5 into the stage 15.

After the sensor 16 detects the infiltration of the etching solution 5, a detection signal is transmitted from the sensor 16 to the transmitter 17. Subsequently, the transmitter 17 converts the detection signal into an electric signal for controlling the operation of the spin etching apparatus of the present embodiment by an electric circuit provided therein. Subsequently, the transmitter 17 transmits the electric signal to the receiver 11 wirelessly. After the receiver 11 receives the electric signal, the spin etching apparatus of the present embodiment is controlled according to the electric signal. That is, the sensor 16 detects the infiltration of the etching solution 5 into the stage 15, and the sensor 16 outputs a detection signal to the transmitter 17.
When transmitted, the transmitter 17 transmits an electric signal for stopping the operation of the spin etching apparatus of the present embodiment to the receiver 11, and the spin etching apparatus automatically stops operation according to the electric signal. can do.

In the spin etching apparatus of the present embodiment, the loading of the semiconductor wafer 4 into the spin etching apparatus is automatically performed by the loader 7 and the handler 10. When a crack 20 occurs in the semiconductor wafer 4 and the etchant 5 infiltrates the stage 15, the sensor 16
The operation of the spin etching apparatus can be stopped instantaneously, and the operation of the spin etching apparatus can be stopped in conjunction with the detection of the infiltration of the etching solution 5 by the sensor 16. It is possible to prevent the etchant 5 from adhering to and contaminating the semiconductor wafer 4 carried into the spin etching apparatus from the stage 15. In addition, since the operation of the spin etching apparatus can be stopped in conjunction with the detection of the infiltration of the etching solution 5 by the sensor 16, the plurality of semiconductor wafers 4 are continuously arranged on the stage 15 contaminated by the etching solution 5. Can be prevented from being carried in. That is,
Since a plurality of semiconductor wafers 4 can be prevented from being continuously loaded onto the stage 15 contaminated with the etching solution 5, it is possible to prevent the semiconductor wafer 4 contaminated with the etching solution 5 from flowing out. It becomes possible. Further, since it is possible to prevent the semiconductor wafer 4 contaminated by the etching solution 5 from flowing out, the quality of the semiconductor device manufactured from the semiconductor wafer 4 can be improved.
Yield and reliability can be improved.

Next, the case where the spin etching apparatus according to the present embodiment described with reference to FIGS. 1 to 3 is applied during the manufacturing process of the diode, together with the manufacturing process of the diode, will be described with reference to FIGS. This will be described with reference to FIG.

FIG. 4 is a flowchart showing an example of a method for manufacturing the above-described diode.

First, in step 101, an n-type low-concentration layer 32 of the diode of the present embodiment is formed by growing an epitaxial layer on an n-type high-concentration substrate (semiconductor wafer) 31 (FIG. 5). The n-type low-concentration layer 32 has a resistivity of about 100 Ωcm or more, and has a thickness of about 15 μm, for example.

Next, in step 102, the n-type low concentration layer 3
2 is oxidized to form an oxide film 33 (FIG. 6).

Next, in step 103, the p-type diffusion layer 3 formed in the next step 104
A selective opening for forming 4 is performed. Subsequently, in step 104, a doping material such as PBF (Poly Boron Film) is applied to the n-type low concentration layer 32 using the oxide film 33 as a mask. Continue further, about 900 ° C
By annealing the n-type low-concentration layer 32 in a moderate atmosphere, the n-type low-concentration layer 32 is doped with B (boron) to form a p-type diffusion layer 34 (FIG. 7). Subsequently, in an N ₂ (nitrogen) atmosphere, the n-type low concentration layer 32 is formed.
Is subjected to a heat treatment at about 1000 ° C. to form ap / n junction by the p-type diffusion layer 34 and the n-type low concentration layer 32 (step 105).

Next, in step 106, an oxide film 35 is formed on the exposed surface of the p-type diffusion layer 34 by using a thermal oxidation method. Subsequently, an SiO ₂ film (silicon oxide film) is deposited on the n-type low concentration layer 32. Subsequently, the SiO ₂
On the surface of the film, PSG (Phospho
By depositing a silicate glass film, a surface protection film 36 composed of a SiO ₂ film and a PSG film is formed (FIG. 8).

Next, in step 107, the oxide film 35 and the surface protection film 35 are etched using a photoresist film (not shown) as a mask to form a contact hole 37 (FIG. 9). At this time, the p-type diffusion layer 34 is exposed at the bottom of the contact hole 37.

Next, in step 108, Al (aluminum) and Si are formed on the n-type low concentration layer 32 including the inside of the contact hole 37 by using, for example, a sputtering method.
(Silicon) is deposited. Then, using a photoresist film (not shown) as a mask,
The surface electrode 38 is formed by etching the alloy film composed of 1 and Si (FIG. 10).

Next, in step 109, the n-type low concentration layer 3
2, a SiN (silicon nitride) film is deposited. continue,
An SiO ₂ film is deposited on the SiN film, and a surface final protective film 39 composed of a stacked film of the SiN film and the SiO ₂ film is formed. Subsequently, the surface of the surface electrode 38 is exposed by etching the surface final protective film 39 using a photoresist film (not shown) as a mask (FIG. 1).
1).

Next, in step 110, the back surface of the n-type high-concentration substrate 31 is ground by grinding, and the n-type high-concentration substrate 31 is thinned in accordance with a package form described later with reference to FIG.

Subsequently, in step 111, the back surface 40 of the n-type high-concentration substrate 31 is wet-etched by the spin etching apparatus described with reference to FIGS.

At this time, the etching solution 5 is added to the back surface 39 of the n-type high concentration substrate 31 by rotating the chuck 3. Here, if a crack has occurred in the n-type high-concentration substrate 31 and the etching solution 5 is added to the back surface 40 of the n-type high-concentration substrate 31, the etching solution 5 permeates the stage 15 through the crack. As described with reference to FIG. 3, the infiltration of the etching solution 15 can be detected by the sensor 16 and the operation of the spin etching apparatus of the present embodiment can be stopped. As a result, it is possible to prevent a plurality of n-type high-concentration substrates 31 from being continuously loaded on the stage 15 contaminated by the etching solution 5. Further, since it is possible to prevent a plurality of n-type high-concentration substrates 31 from being continuously loaded on the stage 15 contaminated with the etching solution 5, the n-type high-concentration substrate 31 contaminated with the etching solution 5 is prevented. Can be prevented from flowing out.

Next, after cleaning the n-type high concentration substrate 31,
In step 112, an Ag (silver) film (thin film) is formed on the back surface 40 of the n-type high-concentration substrate 31 by using, for example, a sputtering method.
Is deposited. Subsequently, similarly to step 111, the Ag film is wet-etched by the spin etching apparatus described with reference to FIGS. 1 to 3 to form the back surface electrode 41, thereby forming the diode 42 of the present embodiment (FIG. 12). At this time, as in the case of the step 111, even if a crack has occurred in the n-type high-concentration substrate 31, the sensor 16 described with reference to FIG.
The operation of the spin etching apparatus according to the present embodiment can be stopped.

Thereafter, in step 113, the n-type high-concentration substrate 31 is divided by dicing, and the diode 42 is divided into unit elements. Subsequently, in step 114, the individual diodes 42 are sealed with a sealing resin and packaged.

In the packaging described above, FIG.
As shown in FIG. 3 and FIG. 14, the back electrode 41 of the diode 42 is connected to the lead 43. Then, the surface electrode 38 is electrically connected to the lead 44 via the bonding wire 45. Subsequently, the outer end of the lead 43 and the outer end of the lead 44 are mounted by sealing the inner end of the lead 43, the inner end of the lead 44, the diode 42 and the bonding wire 45 with a sealing resin 46. To form a package exposed to the outside. At this time, a polarity identification mark 47 such as a color band is formed on the outer peripheral surface of the sealing resin 46.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, in the above embodiment, the case where the material of the back electrode of the diode is Ag has been exemplified, but a multilayer film made of Au (gold) / Sb (antimony) / Au may be used.

Further, the method of manufacturing a semiconductor device according to the present invention
The present invention can be applied to various semiconductor devices manufactured by an etching process using a spin etching apparatus.

[0050]

The effects obtained by typical ones of the inventions disclosed by the present application will be briefly described as follows. (1) According to the present invention, a chuck of a spin etching apparatus (wet etching apparatus) is formed, and a sensor is installed at the outermost peripheral portion of the surface of a stage on which a semiconductor wafer is mounted. It can be detected that the etching liquid has permeated into the (chuck). (2) According to the present invention, a signal that detects infiltration of an etching solution into a chuck of a wet etching apparatus from a crack generated in a semiconductor wafer is transmitted from a sensor to a transmitter provided inside the chuck. Subsequently, the transmitter converts a signal detecting the infiltration of the etching solution into an electric signal for controlling the wet etching apparatus. Subsequently, the oscillator transmits an electric signal for controlling the operation of the wet etching apparatus, so that when the etchant infiltrates the chuck of the wet etching apparatus, the wet etching apparatus automatically operates according to the electric signal. Can be stopped. (3) According to the present invention, when the etching liquid permeates into the chuck of the wet etching apparatus from the crack generated in the semiconductor wafer, the operation of the wet etching apparatus can be automatically stopped. A plurality of semiconductor wafers can be prevented from being continuously loaded onto the stage (chuck). (4) According to the present invention, it is possible to prevent a plurality of semiconductor wafers from being continuously loaded on the stage (chuck) contaminated by the etchant, so that the semiconductor wafer contaminated by the etchant can be prevented. It can be prevented from flowing out. (5) According to the present invention, the semiconductor wafer contaminated by the etchant can be prevented from flowing out, so that the quality, yield, and reliability of the semiconductor device manufactured from the semiconductor wafer can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a spin etching apparatus which is a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged perspective view (partially sectional view) of a main part of a chuck constituting the spin etching apparatus shown in FIG. 1;

FIG. 3 is an enlarged perspective view (partial sectional view) of a main part of a stage constituting the chuck shown in FIG. 2;

FIG. 4 is an explanatory diagram showing a manufacturing flow of the semiconductor device according to one embodiment of the present invention;

FIG. 5 is a fragmentary cross-sectional view showing the method for manufacturing the semiconductor device according to one embodiment of the present invention;

6 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 5;

7 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 6;

8 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 7;

9 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 8;

10 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 9;

11 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 10;

12 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 11;

13 is a fragmentary cross-sectional view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 12;

14 is a fragmentary plan view of the semiconductor integrated circuit device during a manufacturing step following that of FIG. 13;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Main unit 2 Spin motor 3 Chuck 4 Semiconductor wafer 5 Etching liquid 6 Recovery tank 7 Loader 8 Unloader 9 Nozzle 10 Handler 11 Receiver 12 Tube 15 Stage 16 Sensor 16a First electrode 16b Second electrode 17 Transmitter (transmission circuit 18 groove 19 hole 20 crack 31 n-type high-concentration substrate (semiconductor wafer) 32 n-type low-concentration layer 33 oxide film 34 p-type diffusion layer 35 oxide film 36 surface protection film 37 contact hole 38 surface electrode 39 surface final protection film Reference Signs List 40 back surface 41 back electrode 42 pin diode 43 lead 44 lead 45 bonding wire 46 sealing resin 47 polarity identification mark 101 to 113 process

Claims (5)

[Claims] 1. A semiconductor manufacturing apparatus having a chuck for holding a semiconductor wafer and wet etching the semiconductor wafer or a thin film deposited on the semiconductor wafer, wherein the chuck has a stage for mounting the semiconductor wafer. And a sensor for detecting infiltration of an etching solution into a gap between the semiconductor wafer and the stage is provided at a part of the stage. 2. A semiconductor manufacturing apparatus having a chuck for holding a semiconductor wafer and wet-etching the semiconductor wafer or a thin film deposited on the semiconductor wafer, wherein the chuck has a stage for mounting the semiconductor wafer. A part of the stage has a sensor for detecting infiltration of an etching solution into a gap between the semiconductor wafer and the stage, and a transmitter for transmitting an electric signal for controlling operation of the semiconductor manufacturing apparatus. A semiconductor manufacturing apparatus, comprising: 3. A semiconductor manufacturing apparatus, comprising: a chuck for holding a semiconductor wafer; and wet etching the semiconductor wafer or a thin film deposited on the semiconductor wafer, wherein the chuck has a stage for mounting the semiconductor wafer. A part of the stage has a sensor for detecting infiltration of an etching solution into a gap between the semiconductor wafer and the stage, and a transmitter for transmitting an electric signal for controlling operation of the semiconductor manufacturing apparatus. And a power supply for supplying operating power to the sensor and the transmitter. 4. A semiconductor manufacturing apparatus having a chuck for holding a semiconductor wafer and wet-etching the semiconductor wafer or a thin film deposited on the semiconductor wafer, wherein the chuck has a stage for mounting the semiconductor wafer. A part of the stage has a sensor for detecting infiltration of an etching solution into a gap between the semiconductor wafer and the stage, and a transmitter for transmitting an electric signal for controlling operation of the semiconductor manufacturing apparatus. A power supply for supplying operating power to the sensor and the transmitter,
The sensor includes a second electrode provided in a ring shape on the outermost peripheral portion of the surface of the stage, and a first electrode provided in a ring shape on the surface of the stage so as to be separated from the second electrode. A semiconductor manufacturing apparatus characterized by the above-mentioned. 5. A method for manufacturing a semiconductor device using a semiconductor manufacturing apparatus for wet-etching a semiconductor wafer or a thin film deposited on the semiconductor wafer, comprising: (a) mounting on a stage constituting a chuck of the semiconductor manufacturing apparatus; Mounting the semiconductor wafer, (b) the (a)
Rotating the chuck after the step, and (c) wet etching the semiconductor wafer or a thin film deposited on the semiconductor wafer by adding an etchant to the semiconductor wafer while the chuck is rotated. Wherein, when the etching liquid has permeated into the gap between the semiconductor wafer and the stage, the permeation of the etching liquid is detected by a sensor provided on a part of the stage. A method for manufacturing a semiconductor device.