JP2002057104A - レジストパターンの形成装置および形成方法並びに物品の製造方法 - Google Patents
レジストパターンの形成装置および形成方法並びに物品の製造方法Info
- Publication number
- JP2002057104A JP2002057104A JP2001212846A JP2001212846A JP2002057104A JP 2002057104 A JP2002057104 A JP 2002057104A JP 2001212846 A JP2001212846 A JP 2001212846A JP 2001212846 A JP2001212846 A JP 2001212846A JP 2002057104 A JP2002057104 A JP 2002057104A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- exposure
- forming
- resist pattern
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 238000010894 electron beam technology Methods 0.000 claims description 96
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 36
- 230000008859 change Effects 0.000 claims description 30
- 230000005670 electromagnetic radiation Effects 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 23
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 22
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 230000005291 magnetic effect Effects 0.000 claims description 6
- KXKVLQRXCPHEJC-UHFFFAOYSA-N methyl acetate Chemical compound COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000011161 development Methods 0.000 abstract description 41
- 238000004904 shortening Methods 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 description 22
- 230000035945 sensitivity Effects 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 13
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 210000003128 head Anatomy 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WSUIRDORMCYOBS-UHFFFAOYSA-N 3-chloro-2-methylprop-2-enoic acid Chemical compound ClC=C(C)C(O)=O WSUIRDORMCYOBS-UHFFFAOYSA-N 0.000 description 1
- 102100033041 Carbonic anhydrase 13 Human genes 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 101000867860 Homo sapiens Carbonic anhydrase 13 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 238000011981 development test Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920005684 linear copolymer Polymers 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 210000004761 scalp Anatomy 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21045500P | 2000-06-09 | 2000-06-09 | |
| US60/210455 | 2000-10-18 | ||
| US09/690824 | 2000-10-18 | ||
| US09/690,824 US6541182B1 (en) | 2000-06-09 | 2000-10-18 | Method for forming fine exposure patterns using dual exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002057104A true JP2002057104A (ja) | 2002-02-22 |
| JP2002057104A5 JP2002057104A5 (enExample) | 2004-11-25 |
Family
ID=26905170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001212846A Pending JP2002057104A (ja) | 2000-06-09 | 2001-06-08 | レジストパターンの形成装置および形成方法並びに物品の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6541182B1 (enExample) |
| JP (1) | JP2002057104A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007013088A (ja) * | 2005-06-29 | 2007-01-18 | Hynix Semiconductor Inc | 二重露光技術を用いた二重露光方法及びこの二重露光方法のためのフォトマスク |
| JP2015015291A (ja) * | 2013-07-03 | 2015-01-22 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム、基板処理方法及び基板処理用記録媒体 |
| US9417530B2 (en) | 2012-03-30 | 2016-08-16 | Fujifilm Corporation | Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6821869B2 (en) * | 2001-05-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Photomask, method of generating resist pattern, and method of fabricating master information carrier |
| AU2003217542A1 (en) * | 2002-02-15 | 2003-09-09 | Janusz Murakowski | Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination |
| US6875624B2 (en) * | 2002-05-08 | 2005-04-05 | Taiwan Semiconductor Manufacturing Co. Ltd. | Combined E-beam and optical exposure semiconductor lithography |
| US20050064346A1 (en) * | 2003-09-19 | 2005-03-24 | Matsushita Electric Industrial Co., Ltd. | Method for forming resist pattern, method for manufacturing master information carrier, magnetic recording medium, and magnetic recording/reproducing apparatus, and magnetic recording/reproducing apparatus |
| US7172786B2 (en) * | 2004-05-14 | 2007-02-06 | Hitachi Global Storage Technologies Netherlands B.V. | Methods for improving positioning performance of electron beam lithography on magnetic wafers |
| US7285781B2 (en) | 2004-07-07 | 2007-10-23 | Intel Corporation | Characterizing resist line shrinkage due to CD-SEM inspection |
| US20060139338A1 (en) * | 2004-12-16 | 2006-06-29 | Robrecht Michael J | Transparent optical digitizer |
| EP1795958A1 (en) * | 2005-12-07 | 2007-06-13 | Electronics And Telecommunications Research Institute | Method of fabricating nanoimprint mold |
| DE102006053074B4 (de) * | 2006-11-10 | 2012-03-29 | Qimonda Ag | Strukturierungsverfahren unter Verwendung chemisch verstärkter Fotolacke und Belichtungsvorrichtung |
| US7696057B2 (en) * | 2007-01-02 | 2010-04-13 | International Business Machines Corporation | Method for co-alignment of mixed optical and electron beam lithographic fabrication levels |
| KR101452229B1 (ko) * | 2007-06-12 | 2014-10-22 | 후지필름 가부시키가이샤 | 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법 |
| EP2562599B1 (en) | 2009-01-29 | 2014-12-10 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
| TWI423307B (zh) * | 2010-11-05 | 2014-01-11 | Far Eastern New Century Corp | 製造微結構的方法 |
| US8828650B2 (en) * | 2011-09-13 | 2014-09-09 | Far Eastern New Century Corporation | Method for making a retarder |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2538081B2 (ja) | 1988-11-28 | 1996-09-25 | 松下電子工業株式会社 | 現像液及びパタ―ン形成方法 |
| US6235450B1 (en) * | 1998-06-05 | 2001-05-22 | Nikon Corporation | Pattern formation methods combining light lithography and electron-beam lithography and manufacturing methods using the same |
-
2000
- 2000-10-18 US US09/690,824 patent/US6541182B1/en not_active Expired - Fee Related
-
2001
- 2001-06-08 JP JP2001212846A patent/JP2002057104A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007013088A (ja) * | 2005-06-29 | 2007-01-18 | Hynix Semiconductor Inc | 二重露光技術を用いた二重露光方法及びこの二重露光方法のためのフォトマスク |
| US9417530B2 (en) | 2012-03-30 | 2016-08-16 | Fujifilm Corporation | Method for developing resist, method for forming a resist pattern, method for producing a mold, and developing fluid utilized in these methods |
| JP2015015291A (ja) * | 2013-07-03 | 2015-01-22 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム、基板処理方法及び基板処理用記録媒体 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6541182B1 (en) | 2003-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061208 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061213 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070516 |