JP2002050619A - Forming apparatus for porous insulation film - Google Patents
Forming apparatus for porous insulation filmInfo
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- JP2002050619A JP2002050619A JP2000238410A JP2000238410A JP2002050619A JP 2002050619 A JP2002050619 A JP 2002050619A JP 2000238410 A JP2000238410 A JP 2000238410A JP 2000238410 A JP2000238410 A JP 2000238410A JP 2002050619 A JP2002050619 A JP 2002050619A
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- chamber
- heat treatment
- treatment chamber
- coating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体基板上に多
孔質絶縁膜を形成する装置に関する。[0001] The present invention relates to an apparatus for forming a porous insulating film on a semiconductor substrate.
【０００２】[0002]
【従来の技術】近年、ＬＳＩの分野においてはさらなる
高集積化を図るためＡｌ配線等の微細化と共に多層化が
進められている。そして、配線の多層化には各配線間に
層間絶縁膜を設けることになるが、比誘電率の低い層を
形成するという観点から層間絶縁膜を多孔質の低比誘電
率酸化物膜（ＳｉＯ2膜）にすることが提案されてい
る。従来の方法では、例えば該酸化物膜を平坦に形成す
る必要から該酸化物膜がＳＯＧ（spin on glass)の塗布
法を利用して、無機ＳＯＧのシリル化により形成され
る。この場合、多孔質絶縁膜形成装置は、所定の受渡位
置から被処理基板である半導体基板を個々に搬送する搬
送手段を備え、該搬送手段の周辺に、被処理基板搬送方
向上流側からスピンコーターと、加熱手段を備えた熱処
理室とを配置して構成される。2. Description of the Related Art In recent years, in the field of LSI, multilayering has been promoted along with miniaturization of Al wiring and the like in order to achieve higher integration. In order to form a multilayer wiring, an interlayer insulating film is provided between the wirings. From the viewpoint of forming a layer having a low relative dielectric constant, the interlayer insulating film is formed of a porous low dielectric constant oxide film (SiO 2). 2 ) has been proposed. In the conventional method, for example, since the oxide film needs to be formed flat, the oxide film is formed by silylation of inorganic SOG using a spin-on-glass (SOG) coating method. In this case, the porous insulating film forming apparatus includes a transfer unit for individually transferring the semiconductor substrates to be processed from the predetermined delivery position, and a spin coater is provided around the transfer unit from the upstream side in the transfer direction of the substrate to be processed. And a heat treatment chamber provided with a heating means.
【０００３】[0003]
【発明が解決しようとする課題】ところが、上述の方法
で得られたＳｉＯ2膜には多量のＯＨ基が残留してい
る。このため、該ＳｉＯ2膜を大気中に曝すと該ＯＨ基
に大気中の水分が吸着し、比誘電率を上昇させるだけで
はなく、Ａｌ等の配線の腐食を誘発するという問題があ
った。However, a large amount of OH groups remains in the SiO 2 film obtained by the above method. For this reason, when the SiO 2 film is exposed to the air, there is a problem that moisture in the air is adsorbed to the OH groups, which not only raises the dielectric constant but also causes corrosion of wiring such as Al.
【０００４】そこで、本発明の課題は、上記問題点に鑑
み、比誘電率を上昇させ、Ａｌ配線等の腐食を誘発する
水分吸着が問題とならない多孔質ＳｉＯ2膜の形成を可
能とする多孔質絶縁膜形成装置を提供することにある。In view of the above problems, it is an object of the present invention to increase the relative dielectric constant and to form a porous SiO 2 film capable of forming a porous SiO 2 film which does not pose a problem of moisture adsorption which induces corrosion of Al wiring and the like. An object of the present invention is to provide an apparatus for forming a porous insulating film.
【０００５】[0005]
【課題を解決するための手段】この課題を解決するため
に本発明は、所定の受渡位置から被処理基板を個々に搬
送する搬送手段を備えた搬送室に、回転塗布手段を備え
た塗布室と加熱手段を備えた熱処理室とをそれぞれ連結
し、周辺雰囲気と隔絶された状態で連続して、所定の材
料から調製した塗布液の被処理基板上への回転塗布と熱
処理とを行うことで被処理基板上に多孔質絶縁膜を形成
する装置であって、熱処理室の基板搬送方向下流側に、
得られた多孔質絶縁膜に残留するＯＨ基を除去する表面
処理手段を備えた表面処理室を連結したことを特徴とす
る。SUMMARY OF THE INVENTION In order to solve this problem, the present invention provides a transfer chamber provided with transfer means for individually transferring substrates to be processed from a predetermined delivery position, and a coating chamber provided with rotary coating means. And a heat treatment chamber provided with a heating means, respectively, and continuously performing a spin coating and a heat treatment on a substrate to be processed with a coating solution prepared from a predetermined material while being isolated from the surrounding atmosphere. An apparatus for forming a porous insulating film on a substrate to be processed, comprising:
A surface treatment chamber provided with a surface treatment means for removing OH groups remaining in the obtained porous insulating film is connected.
【０００６】得られた多孔質ＳｉＯ2膜を大気に曝した
のでは膜内に残留するＯＨ基に大気中の水分が吸着し、
比誘電率を上昇させ、その上、Ａｌ配線等が腐食される
問題が生じる。そこで、本発明では、熱処理室の下流側
に、得られた多孔質絶縁膜内に残留するＯＨ基を除去す
る表面処理手段を備えた表面処理室を連結した。そし
て、被処理基板の搬送を含む所定の塗布液の塗布から表
面処理までを周辺雰囲気と隔絶された状態で連続して行
なうことで半導体基板上に多孔質絶縁膜層が形成された
後、直ちにその膜中に残留するＯＨ基が除去されるの
で、水分吸着に伴う比誘電率の低下を防止できると共
に、Ａｌ配線等の腐食が防止できる。When the obtained porous SiO 2 film is exposed to the air, moisture in the air is adsorbed on OH groups remaining in the film,
This raises the dielectric constant, and also causes a problem that the Al wiring and the like are corroded. Therefore, in the present invention, a surface treatment chamber provided with a surface treatment means for removing OH groups remaining in the obtained porous insulating film is connected to the downstream side of the heat treatment chamber. Then, from the application of the predetermined coating solution including the transfer of the substrate to be processed to the surface treatment, the porous insulating film layer is formed on the semiconductor substrate immediately by continuously performing in a state separated from the surrounding atmosphere. Since the OH groups remaining in the film are removed, a decrease in the relative dielectric constant due to moisture adsorption can be prevented, and corrosion of the Al wiring and the like can be prevented.
【０００７】尚、本発明では、前記表面処理室と前記搬
送室との間に開閉自在な遮蔽手段を介設し、真空排気手
段を用いて該表面処理室内部の真空雰囲気の形成を可能
とし、前記表面処理を、酸素プラズマの導入、電子線照
射及び紫外線照射のうちいずれか１つにより行うことが
好ましい。この処理によって、多孔質ＳｉＯ２膜に、
（ＯＳｉＯＨ）2Ｏ→２ＳｉＯ2＋Ｈ2Ｏの反応を生じさ
せることでＯＨ基が除去され、比誘電率の上昇を防止す
ると共に、Ａｌ配線等の腐食を防止する。In the present invention, an openable and closable shielding means is provided between the surface treatment chamber and the transfer chamber, and a vacuum atmosphere inside the surface treatment chamber can be formed by using a vacuum exhaust means. Preferably, the surface treatment is performed by one of introduction of oxygen plasma, electron beam irradiation, and ultraviolet irradiation. By this treatment, the porous SiO2 film
By causing a reaction of (OSiOH) 2 O → 2SiO 2 + H 2 O, an OH group is removed, thereby preventing an increase in relative permittivity and preventing corrosion of Al wiring and the like.
【０００８】[0008]
【発明の実施の形態】図１を参照して、ＳＯＧ塗布法を
利用して多孔質ＳｉＯ2膜を作製する本発明の多孔質絶
縁膜形成装置１は搬送室２を備えている。該搬送室２は
略直方体の中空ハウジング２１であって、各側面に開口
２１ａ、２１ｂ、２１ｃ、２１ｄを設けたものを備えて
いる。該搬送室２１には、サーボモータ（図示せず）を
備えた回転軸２２が設けられ、該回転軸２２の一部はハ
ウジング２１の底部から内部空間に突出している。ま
た、該回転軸２２には搬送アーム２３が固着されてい
る。搬送アーム２３は、回転軸２１の上端に固着された
第１アーム２３ａと、各第１アーム２３ａの他端に枢支
された第２アーム２３ｂと、該第２アーム２３ｂの他端
に枢支されると共に、半導体基板を下側から支持するフ
ォーク状の支持部を備えた第３アーム２３ｃとからな
り、第２及び第３の各アーム２３ｂ、２３ｃを旋回させ
ることで搬送アーム２３は伸縮自在となる。尚、基板の
受渡等のため、回転軸を、短いストロークで昇降自在と
することもできる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, a porous insulating film forming apparatus 1 of the present invention for producing a porous SiO 2 film by using the SOG coating method has a transfer chamber 2. The transfer chamber 2 is a substantially rectangular parallelepiped hollow housing 21 having openings 21a, 21b, 21c, and 21d on respective side surfaces. The transfer chamber 21 is provided with a rotating shaft 22 provided with a servomotor (not shown), and a part of the rotating shaft 22 projects from the bottom of the housing 21 into the internal space. A transfer arm 23 is fixed to the rotation shaft 22. The transfer arm 23 includes a first arm 23a fixed to the upper end of the rotating shaft 21, a second arm 23b pivotally supported at the other end of each first arm 23a, and a pivotal support at the other end of the second arm 23b. And a third arm 23c provided with a fork-shaped support portion for supporting the semiconductor substrate from below, and the transfer arm 23 can be extended and contracted by turning each of the second and third arms 23b and 23c. Becomes In addition, the rotation shaft can be freely moved up and down with a short stroke for delivery of the substrate and the like.
【０００９】搬送室２のハウジング２１側面に設けた１
個の開口２１ａには、基板受渡室３が連結されている。
該受渡室３には、所定枚数の被処理基板である半導体基
板が所定の間隔を置いて収納されたカセットを載置する
カセットテーブル３１が備えられている。該テーブル３
１には、第３アームの高さに対応してカセットを昇降さ
せる昇降手段が設けられ、これにより、搬送アーム２３
によるカセットから個々の半導体基板の受渡しが可能と
なる。また、ハウジング２１の側面の開口のうち、基板
受渡室３から被処理基板搬送方向下流側に位置する開口
２１ｂには塗布室４が連結されている。該塗布室４には
スピンコーター４１が設けられている。該スピンコータ
ー４１は、モータを備えた回転テーブル４２と、該回転
テーブルの上方に配置された塗布ノズル４３とを備えて
いる。該塗布ノズル４３は、電磁弁を介して所定の材料
から調製された塗布液を収納したタンク（図示せず）に
接続されている。そして、半導体基板上に所定量の塗布
液を塗布しつつ、所定の回転数（例えば、３０００回転
／分）で回転テーブル４２を回転させて半導体基板上に
ＳｉＯ2の液膜を形成する。ここで、塗布液としては、
例えば、所定モル数のシラノ―ル（Ｓｉ（ＯＨ）4）を
エタノールに溶かしたものである。1 is provided on the side of the housing 21 of the transfer chamber 2.
The substrate delivery chamber 3 is connected to each of the openings 21a.
The delivery chamber 3 is provided with a cassette table 31 on which a cassette in which a predetermined number of semiconductor substrates as substrates to be processed are stored at predetermined intervals. The table 3
1 is provided with elevating means for elevating the cassette in accordance with the height of the third arm.
Enables the individual semiconductor substrates to be delivered from the cassettes. The coating chamber 4 is connected to an opening 21 b of the side surface of the housing 21 which is located on the downstream side in the substrate transfer direction from the substrate delivery chamber 3. The coating chamber 4 is provided with a spin coater 41. The spin coater 41 includes a rotating table 42 having a motor, and a coating nozzle 43 disposed above the rotating table. The coating nozzle 43 is connected via an electromagnetic valve to a tank (not shown) that stores a coating liquid prepared from a predetermined material. Then, while applying a predetermined amount of the coating liquid on the semiconductor substrate, the rotary table 42 is rotated at a predetermined rotation speed (for example, 3000 rotations / minute) to form a liquid film of SiO 2 on the semiconductor substrate. Here, as the coating liquid,
For example, a predetermined mole number of silanol (Si (OH) 4 ) is dissolved in ethanol.
【００１０】また、塗布室４の基板搬送方向下流側のハ
ウジングの開口２１ｃには熱処理室５が連結されてい
る。熱処理室５内には、基板ホルダー５１が設けられて
いると共に、該ホルダーの上方に位置して赤外線ヒータ
（図示せず）が備えられ、ＳｉＯ2の液層が形成された
半導体基板は４００℃程度の温度で熱処理されて焼成さ
れる。この場合、熱処理を、熱処理室上方からエアーブ
ロー状態で行うことが好ましい。A heat treatment chamber 5 is connected to an opening 21c of the housing downstream of the coating chamber 4 in the substrate transport direction. In the heat treatment chamber 5, a substrate holder 51 is provided, and an infrared heater (not shown) is provided above the holder, and the semiconductor substrate on which the liquid layer of SiO 2 is formed has a temperature of 400 ° C. It is heat-treated at a temperature of about and fired. In this case, the heat treatment is preferably performed in an air blow state from above the heat treatment chamber.
【００１１】ところで、所定の塗布液を回転塗布した後
に熱処理を行って形成したＳｉＯ2膜には多量のＯＨ基
が残留しているため、該ＳｉＯ2膜を大気中に曝すと該
ＯＨ基に大気中の水分が吸着し、比誘電率を上昇させる
だけではなく、Ａｌ配線等の腐食を誘発する場合があ
る。そこで、本発明の実施の形態では、熱処理室５の基
板搬送方向下流側のハウジングの開口２１ｄにゲートバ
ルブ６を介して表面処理室７を連結した。By the way, since the SiO 2 film formed by heat treatment after the spin coating a predetermined coating liquid remaining large amount of OH groups, the SiO 2 film to the OH group is exposed to the atmosphere In some cases, moisture in the atmosphere is adsorbed and not only raises the dielectric constant but also induces corrosion of Al wiring and the like. Therefore, in the embodiment of the present invention, the surface treatment chamber 7 is connected via the gate valve 6 to the opening 21 d of the housing on the downstream side of the heat treatment chamber 5 in the substrate transfer direction.
【００１２】図２を参照して、該表面処理室７には、被
処理基板が載置される基板ホルダー７１であって、内部
に加熱装置７２を備えたものが設けられている。また、
表面処理室７の側壁７ａには、放電管を備えた反応性ガ
ス導入部７３ａと、該反応性ガス導入部７３ａに接続さ
れたマイクロ波電源７３ｂとからなる酸素プラズマ発生
装置７３が配設されている。該酸素プラズマ発生装置７
３は、該表面処理室７に接続された真空ポンプ系７４を
介して内部が真空排気された後、ガス源７５から導入さ
れる酸素ガスなどの反応性ガスをマイクロ波電源でプラ
ズマ化し、これを表面処理室内５に導入するように構成
したものである。そして、基板ホルダー６１上に載置さ
れかつ加熱された半導体基板上に形成された多孔質Ｓｉ
Ｏ2膜に、（ＯＳｉＯＨ）2Ｏ→２ＳｉＯ2＋Ｈ2Ｏの反応
を生じさせることでＯＨ基が除去される。この場合の真
空圧は０．１〜１Ｐａに調節される。Referring to FIG. 2, the surface processing chamber 7 is provided with a substrate holder 71 on which a substrate to be processed is placed, which has a heating device 72 therein. Also,
On the side wall 7a of the surface treatment chamber 7, an oxygen plasma generator 73 including a reactive gas introduction part 73a having a discharge tube and a microwave power supply 73b connected to the reactive gas introduction part 73a is provided. ing. The oxygen plasma generator 7
3, after the inside is evacuated via a vacuum pump system 74 connected to the surface treatment chamber 7, a reactive gas such as oxygen gas introduced from a gas source 75 is turned into plasma by a microwave power source, Is introduced into the surface treatment chamber 5. Then, a porous Si substrate placed on the substrate holder 61 and formed on the heated semiconductor substrate is formed.
The OH group is removed by causing a reaction of (OSiOH) 2 O → 2SiO 2 + H 2 O on the O 2 film. The vacuum pressure in this case is adjusted to 0.1 to 1 Pa.
【００１３】尚、本実施の形態では、表面処理手段とし
て酸素プラズマ装置を使用したが、ＳｉＯ2膜に残留す
るＯＨ基を除去できるものであればこれに限定されるも
のではない。このため、表面処理手段として、例えば、
ＥＢ銃を用いて電子線を照射したり、または、紫外線を
照射したりするものも使用できる。また、本実施の形態
では、基板の搬送を大気中で行っているが、搬送室及び
熱処理室に真空ポンプを接続して真空雰囲気で基板の搬
送や熱処理が行われるようにすることもできる。この場
合、基板受渡室３には、真空雰囲気の形成が可能なロー
ドロック室が設けられる。さらに、本発明の装置はイン
ライン式ものとして形成することも可能である。In this embodiment, an oxygen plasma apparatus is used as the surface treatment means. However, the present invention is not limited to this as long as it can remove OH groups remaining on the SiO 2 film. For this reason, as a surface treatment means, for example,
One that irradiates an electron beam using an EB gun or irradiates an ultraviolet ray can also be used. In this embodiment mode, the transfer of the substrate is performed in the air. However, the transfer and heat treatment of the substrate may be performed in a vacuum atmosphere by connecting a vacuum pump to the transfer chamber and the heat treatment chamber. In this case, the substrate transfer chamber 3 is provided with a load lock chamber capable of forming a vacuum atmosphere. Further, the device of the present invention can be formed as an in-line type.
【図１】本発明の多孔質絶縁膜形成装置の平面図FIG. 1 is a plan view of a porous insulating film forming apparatus of the present invention.
【図２】図１のＩＩ−ＩＩ線に沿った表面処理室の断面
図FIG. 2 is a sectional view of the surface treatment chamber taken along the line II-II in FIG.
１ 多孔質絶縁膜形成装置 ２ 搬送室 ２３ 搬送アーム ３ 基板受渡室 ４ 塗布室 ５ 熱処理室 ６ 表面処理室 DESCRIPTION OF SYMBOLS 1 Porous insulating film forming apparatus 2 Transfer chamber 23 Transfer arm 3 Substrate transfer room 4 Coating room 5 Heat treatment room 6 Surface treatment room
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｂ０５Ｄ 3/04 Ｂ０５Ｄ 3/04 Ｃ 3/06 １０１ 3/06 １０１ １０２ １０２ 7/00 7/00 Ｈ Ｈ０１Ｌ 21/26 Ｈ０１Ｌ 21/263 Ｅ 21/263 21/316 Ｇ 21/316 21/26 Ｅ 21/768 21/90 Ｑ Ｆターム(参考） 4D075 AC64 AC71 BB46Z BB47Z BB49Z BB56Z DA06 DC22 4F042 AA07 DB04 DB41 EB00 5F033 HH08 QQ85 QQ89 RR04 RR09 RR29 SS22 XX18 XX24 5F045 AB32 AC09 BB16 DC63 EB20 EN04 HA25 5F058 BA07 BA20 BC05 BF46 BG01 BG02 BJ02 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (reference) B05D 3/04 B05D 3/04 C 3/06 101 3/06 101 102 102 7/00 7/00 H H01L 21/26 H01L 21/263 E 21/263 21/316 G 21/316 21/26 E 21/768 21/90 Q F term (reference) 4D075 AC64 AC71 BB46Z BB47Z BB49Z BB56Z DA06 DC22 4F042 AA07 DB04 DB41 EB00 5F033 HH08 QQ85 QQ89 RR04 RR09 RR29 SS22 XX18 XX24 5F045 AB32 AC09 BB16 DC63 EB20 EN04 HA25 5F058 BA07 BA20 BC05 BF46 BG01 BG02 BJ02
Claims (2)
搬送する搬送手段を備えた搬送室に、回転塗布手段を備
えた塗布室と加熱手段を備えた熱処理室とをそれぞれ連
結し、周辺雰囲気と隔絶された状態で連続して、所定の
材料から調製した塗布液の被処理基板上への回転塗布と
熱処理とを行うことで被処理基板上に多孔質絶縁膜を形
成する装置であって、熱処理室の基板搬送方向下流側
に、得られた多孔質絶縁膜に残留するＯＨ基を除去する
表面処理手段を備えた表面処理室を連結したことを特徴
とする装置。1. A coating chamber having a rotating coating means and a heat treatment chamber having a heating means are respectively connected to a transfer chamber having transfer means for individually transferring substrates to be processed from a predetermined delivery position. An apparatus for forming a porous insulating film on a substrate by performing a spin coating and a heat treatment of a coating solution prepared from a predetermined material on the substrate continuously in a state of being isolated from the atmosphere. A surface treatment chamber provided with a surface treatment means for removing OH groups remaining in the obtained porous insulating film, on the downstream side of the heat treatment chamber in the substrate transport direction.
閉自在な遮蔽手段を介設し、真空排気手段を用いて表面
処理室内部の真空雰囲気の形成を可能とし、前記表面処
理を、酸素プラズマの導入、電子線照射及び紫外線照射
のうちいずれか１つにより行うことを特徴とする請求項
１記載の装置。2. An openable and closable shielding means is interposed between the surface treatment chamber and the transfer chamber, and a vacuum atmosphere inside the surface treatment chamber can be formed by using a vacuum exhaust means. 2. The apparatus according to claim 1, wherein the irradiation is performed by any one of oxygen plasma introduction, electron beam irradiation, and ultraviolet irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000238410A JP2002050619A (en) | 2000-08-07 | 2000-08-07 | Forming apparatus for porous insulation film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000238410A JP2002050619A (en) | 2000-08-07 | 2000-08-07 | Forming apparatus for porous insulation film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002050619A true JP2002050619A (en) | 2002-02-15 |
Family
ID=18730114
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000238410A Pending JP2002050619A (en) | 2000-08-07 | 2000-08-07 | Forming apparatus for porous insulation film |
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| Country | Link |
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| JP (1) | JP2002050619A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010274158A (en) * | 2009-05-26 | 2010-12-09 | Toshin:Kk | Method for treating surface of resin molding and method for manufacturing resin molding having surface layer formed after treating surface |
| JP2021045712A (en) * | 2019-09-18 | 2021-03-25 | タクボエンジニアリング株式会社 | Painting system |
-
2000
- 2000-08-07 JP JP2000238410A patent/JP2002050619A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010274158A (en) * | 2009-05-26 | 2010-12-09 | Toshin:Kk | Method for treating surface of resin molding and method for manufacturing resin molding having surface layer formed after treating surface |
| JP2021045712A (en) * | 2019-09-18 | 2021-03-25 | タクボエンジニアリング株式会社 | Painting system |
| JP7300947B2 (en) | 2019-09-18 | 2023-06-30 | タクボエンジニアリング株式会社 | painting system |
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