JP2002050559A5 - - Google Patents

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Publication number
JP2002050559A5
JP2002050559A5 JP2000233196A JP2000233196A JP2002050559A5 JP 2002050559 A5 JP2002050559 A5 JP 2002050559A5 JP 2000233196 A JP2000233196 A JP 2000233196A JP 2000233196 A JP2000233196 A JP 2000233196A JP 2002050559 A5 JP2002050559 A5 JP 2002050559A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2000233196A
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JP2002050559A (ja
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Priority to JP2000233196A priority Critical patent/JP2002050559A/ja
Priority claimed from JP2000233196A external-priority patent/JP2002050559A/ja
Priority to US09/915,325 priority patent/US6891175B2/en
Publication of JP2002050559A publication Critical patent/JP2002050559A/ja
Publication of JP2002050559A5 publication Critical patent/JP2002050559A5/ja
Withdrawn legal-status Critical Current

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JP2000233196A 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法 Withdrawn JP2002050559A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000233196A JP2002050559A (ja) 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法
US09/915,325 US6891175B2 (en) 2000-08-01 2001-07-27 Exposure apparatus and device manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000233196A JP2002050559A (ja) 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2002050559A JP2002050559A (ja) 2002-02-15
JP2002050559A5 true JP2002050559A5 (ja) 2007-09-13

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ID=18725752

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Application Number Title Priority Date Filing Date
JP2000233196A Withdrawn JP2002050559A (ja) 2000-08-01 2000-08-01 露光装置及びそれを用いたデバイスの製造方法

Country Status (2)

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US (1) US6891175B2 (ja)
JP (1) JP2002050559A (ja)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004072076A (ja) * 2002-06-10 2004-03-04 Nikon Corp 露光装置及びステージ装置、並びにデバイス製造方法
SG115631A1 (en) * 2003-03-11 2005-10-28 Asml Netherlands Bv Lithographic projection assembly, load lock and method for transferring objects
US7812283B2 (en) 2004-03-26 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN101667538B (zh) * 2004-08-23 2012-10-10 株式会社半导体能源研究所 半导体器件及其制造方法
JP2006269941A (ja) * 2005-03-25 2006-10-05 Canon Inc 導光装置、露光装置、並びにデバイス製造方法
KR101284201B1 (ko) * 2005-05-02 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치 및 레이저 조사 방법
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
JP2009099873A (ja) * 2007-10-18 2009-05-07 Canon Inc 露光装置およびデバイス製造方法
US8669023B2 (en) 2008-09-01 2014-03-11 D2S, Inc. Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
US8057970B2 (en) 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US7901850B2 (en) 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
JP2010232217A (ja) * 2009-03-25 2010-10-14 Canon Inc 露光システム、露光装置のテスト方法及びデバイス製造方法
US8339573B2 (en) * 2009-05-27 2012-12-25 3M Innovative Properties Company Method and apparatus for photoimaging a substrate
TWI496182B (zh) * 2009-08-26 2015-08-11 D2S Inc 以可變束模糊技術使用帶電粒子束微影術製造表面之方法及系統
US20120278770A1 (en) 2011-04-26 2012-11-01 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US20110089345A1 (en) * 2009-10-21 2011-04-21 D2S, Inc. Method and system for manufacturing a surface using charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9057956B2 (en) 2011-02-28 2015-06-16 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
US20140129997A1 (en) 2012-11-08 2014-05-08 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
JP6189933B2 (ja) 2012-04-18 2017-08-30 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム
CN113777888A (zh) * 2020-06-10 2021-12-10 京东方科技集团股份有限公司 数字化曝光控制方法及装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3387581B2 (ja) 1993-11-04 2003-03-17 キヤノン株式会社 露光装置及び該露光装置を用いてデバイスを製造する方法
US5621216A (en) * 1996-04-26 1997-04-15 International Business Machines Corporation Hardware/software implementation for multipass E-beam mask writing
US6538723B2 (en) * 1996-08-05 2003-03-25 Nikon Corporation Scanning exposure in which an object and pulsed light are moved relatively, exposing a substrate by projecting a pattern on a mask onto the substrate with pulsed light from a light source, light sources therefor, and methods of manufacturing
JPH10270345A (ja) 1997-03-24 1998-10-09 Nikon Corp 走査露光方法及び走査型露光装置
JPH10223513A (ja) 1997-02-12 1998-08-21 Nikon Corp 走査型露光装置

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