JP2002046059A - Base polishing apparatus - Google Patents

Base polishing apparatus

Info

Publication number
JP2002046059A
JP2002046059A JP2000233830A JP2000233830A JP2002046059A JP 2002046059 A JP2002046059 A JP 2002046059A JP 2000233830 A JP2000233830 A JP 2000233830A JP 2000233830 A JP2000233830 A JP 2000233830A JP 2002046059 A JP2002046059 A JP 2002046059A
Authority
JP
Japan
Prior art keywords
substrate
polishing
pressing
base
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000233830A
Other languages
Japanese (ja)
Inventor
Junji Takashita
順治 高下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000233830A priority Critical patent/JP2002046059A/en
Publication of JP2002046059A publication Critical patent/JP2002046059A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a base polishing apparatus capable of polishing a base, without making the thickness of a film on the base uneven in flattening a variety of thin films on a rectangular base of a large area, by enabling stabilization of pressures, and permitting an increase in the adjustable range of the pressures. SOLUTION: The base 1 is pressed by a plurality of pressure control mechanisms 7 held against a disc-shaped carrier 2 enclosing the base 1, when the base is polished by rotating a polishing sheet 5 on a surface plate and rotating the base 1 while pressing the base 1 against the polishing sheet 5. Each pressure control mechanism 7 comprises a micrometer screw head 20 fixed to a loading jig 8, a disc-shaped member 24 mounted to the spindle 22 of the micrometer screw head via a pressure sensor 23, a cylindrical moving member 26 holding a pressing element 27 which abuts the back of the base 1, and a coil spring 25 positioned between the disc-shaped member 24 and the cylindrical moving member 26 for imposing a spring elastic force on the pressing element 27.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶や大面積半導
体センサー等の矩形状で大面積のガラス基板の加工に際
して、基板上に形成された配線膜や絶縁膜の表面を一定
厚みだけ均一に除去して微小な凹凸を平坦化する基板研
磨装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for processing a rectangular glass substrate having a large area, such as a liquid crystal or a large area semiconductor sensor, by uniformly forming a surface of a wiring film or an insulating film formed on the substrate by a certain thickness. The present invention relates to a substrate polishing apparatus that removes and flattens minute irregularities.

【0002】[0002]

【従来の技術】液晶や大面積半導体センサー等の矩形で
大面積のガラス基板上に形成付着された配線膜や絶縁膜
等の各種薄膜の表面を平坦にかつむらなく均一に除去す
る場合、通常、平面ラップ定盤に貼り付けられた弾性研
磨シートに基板を押し付けて研磨するラップ盤研磨が採
用されている。
2. Description of the Related Art In the case where the surfaces of various thin films such as a wiring film and an insulating film formed on a rectangular glass substrate having a large area such as a liquid crystal or a semiconductor sensor having a large area are uniformly and uniformly removed, it is usually required. In addition, lapping disk polishing is employed in which a substrate is pressed against an elastic polishing sheet attached to a flat lapping plate and polished.

【0003】この種のラップ盤研磨においては、研磨面
に作用する研磨圧力が均一でないと、基板内で研磨除去
量にむらが発生する。そのため、研磨圧力を均一にする
ための加圧力の調整方法が各種工夫されている。例え
ば、特許第2536434号公報においては、基板裏面
側に多数のアクチュエータを配置し、圧力を局部的に調
整して研磨するように構成した装置が提案されている。
すなわち、図4に概略的に図示するように、回転可能な
研磨定盤103に貼り付けられた研磨シート102上に
研磨基板101を裏面側から加圧するように配置した加
圧盤104を、基板101の裏面側に配置された多数の
アクチュエータ105と加圧面106とで形成し、多数
のアクチュエータ105には圧電セラミックを用いて、
リード線(制御線)107を通じて電圧電流を制御し、
アクチュエータ105をそれぞれ個別に伸縮させて加圧
力を局部的に調整し、加圧面106を介して基板101
を加圧するようにした装置が提案されている。
[0003] In this type of lapping disk polishing, if the polishing pressure acting on the polishing surface is not uniform, the amount of polishing removed within the substrate will be uneven. Therefore, various methods have been devised for adjusting the pressing force to make the polishing pressure uniform. For example, Japanese Patent No. 2536434 proposes an apparatus in which a large number of actuators are arranged on the back side of a substrate and pressure is locally adjusted to perform polishing.
That is, as schematically shown in FIG. 4, a pressing plate 104 arranged so as to press the polishing substrate 101 from the back surface side on a polishing sheet 102 attached to a rotatable polishing platen 103 is provided on the substrate 101. Formed by a large number of actuators 105 and a pressing surface 106 arranged on the back side of
Voltage and current are controlled through the lead wire (control line) 107,
The pressing force is locally adjusted by individually expanding and contracting the actuators 105 individually, and the substrate 101 is
There has been proposed an apparatus that pressurizes the pressure.

【0004】また、その他の装置としては、多数のエア
ーシリンダーを基板裏面に配置して圧力調整を行うよう
にした装置も提案されている。
As another device, a device has been proposed in which a number of air cylinders are arranged on the back surface of a substrate to adjust the pressure.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、前述し
たような従来技術においては、アクチュエータとして圧
電セラミックを用いる場合、変位ストロークが数10μ
mまでしかなく、加圧力の調整範囲が小さい。そのた
め、基板の周辺などの研磨量が大きく変化する部分での
研磨圧力を調整するには変位ストロークが不十分とな
る。さらに、重要な問題として、加圧盤が研磨機上方に
連結固定されている場合、加圧盤の加圧面は研磨定盤に
対して必ずしも平行ではなく、また、研磨定盤の回転に
伴う研磨定盤のふれもあり、研磨定盤と加圧盤の両者を
密着させるのは困難であった。一方、加圧盤が研磨機上
方と自在継ぎ手で連結されて加圧盤が研磨定盤の傾斜に
倣う構造の場合、アクチュエータの伸縮は加圧盤の傾き
を変化させるため、加圧力分布は必ずしもアクチュエー
タの伸縮のみによって制御することができず、加圧力分
布の制御が困難である。さらに、別の問題として、研磨
シート上での基板の運動による研磨除去むらを均一化す
るために研磨中に基板を回転させる必要があるけれど
も、アクチュエータには制御線が連結されており、制御
線を備えた加圧盤の連続回転により制御線が捩れるため
に、現実には基板および加圧盤を連続回転させることが
困難であった。
However, in the prior art as described above, when the piezoelectric ceramic is used as the actuator, the displacement stroke is several tens of μm.
m and the adjustment range of the pressing force is small. Therefore, the displacement stroke is insufficient to adjust the polishing pressure in a portion where the polishing amount changes greatly, such as around the substrate. Further, as an important problem, when the pressing plate is connected and fixed above the polishing machine, the pressing surface of the pressing plate is not always parallel to the polishing plate, and the polishing plate accompanying the rotation of the polishing plate is also required. And it was difficult to bring both the polishing platen and the pressure plate into close contact with each other. On the other hand, if the pressure plate is connected to the upper part of the polishing machine by a universal joint and the pressure plate follows the inclination of the polishing platen, the expansion and contraction of the actuator changes the inclination of the pressure plate, so the pressure distribution is not necessarily the expansion and contraction of the actuator. It cannot be controlled only by itself, and it is difficult to control the pressure distribution. Further, as another problem, although it is necessary to rotate the substrate during polishing in order to equalize polishing removal unevenness due to movement of the substrate on the polishing sheet, a control line is connected to the actuator. In practice, it is difficult to continuously rotate the substrate and the pressure plate because the control lines are twisted by the continuous rotation of the pressure plate provided with.

【0006】また、エアーシリンダーにより加圧する方
法においては、前述したと同様にエアー配管の連結の問
題があり、また、エアーシリンダー毎に供給エアーの圧
力変動があり、安定した加圧力が得られない欠点があ
る。
Also, in the method of pressurizing with an air cylinder, there is a problem of connection of the air pipes as described above, and the pressure of the supplied air varies for each air cylinder, so that a stable pressing force cannot be obtained. There are drawbacks.

【0007】そこで、本発明は、上記のような従来技術
の有する未解決の課題に鑑みてなされたものであって、
大面積の矩形状基板の各種薄膜の平坦化に際して、加圧
力を安定させることができかつ加圧力調整範囲を大きく
とることを可能にし、基板の膜厚むらを生じさせること
なく研磨することができる基板研磨装置を提供すること
を目的とするものである。
Therefore, the present invention has been made in view of the above-mentioned unsolved problems of the prior art,
When flattening various thin films of a large-area rectangular substrate, it is possible to stabilize the pressing force and make it possible to take a large pressing force adjustment range, and it is possible to polish without causing unevenness in the thickness of the substrate. It is an object of the present invention to provide a substrate polishing apparatus.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、本発明の基板研磨装置は、研磨シートを貼り付けた
研磨定盤を回転させるとともに、基板の裏面側に配設し
た加圧手段により基板を研磨シートに対して加圧しなが
ら該基板を回転させて、基板を研磨する基板研磨装置に
おいて、前記加圧手段は、基板裏面を個々に加圧するよ
うに配置された複数の加圧制御機構と該複数の加圧制御
機構を保持する荷重治具とを備え、前記加圧制御機構
は、前記荷重治具に取り付けられた微動機構と、基板の
裏面に当接して加圧する加圧部材と、該加圧部材と前記
微動機構との間に配置されて前記加圧部材にばね弾性力
を作用させるばねを有し、前記微動機構を調節すること
により前記ばねの弾性力による前記加圧部材の基板に対
する加圧力を調整することができるように構成されてい
ることを特徴とする。
In order to achieve the above object, a substrate polishing apparatus according to the present invention comprises a rotating means for rotating a polishing platen on which a polishing sheet is adhered and a pressing means disposed on the back side of the substrate. In the substrate polishing apparatus for polishing the substrate by rotating the substrate while pressing the substrate against the polishing sheet, the pressing means includes a plurality of pressure control units arranged to individually press the back surface of the substrate. And a load jig for holding the plurality of pressurization control mechanisms, wherein the pressurization control mechanism includes a fine movement mechanism attached to the load jig, and a pressurizing member that presses against the back surface of the substrate. And a spring disposed between the pressurizing member and the fine movement mechanism to apply a spring elastic force to the pressurizing member, and adjusting the fine movement mechanism to apply the pressure by the elastic force of the spring. Adjust the pressure of the member against the substrate Characterized in that it is configured to allow.

【0009】本発明の基板研磨装置において、前記荷重
治具は、基板の研磨に際して基板を前記研磨シートに当
接するように収容する基板収容穴が形成された円板状の
キャリアの上面に着脱自在に固定されていることが好ま
しい。
In the substrate polishing apparatus according to the present invention, the load jig is detachably mounted on an upper surface of a disk-shaped carrier having a substrate receiving hole for receiving the substrate so as to abut the polishing sheet when polishing the substrate. It is preferable that it is fixed to.

【0010】本発明の基板研磨装置において、前記加圧
部材は、基板を加圧する平坦な加圧面と該加圧面と反対
側に延びる軸部を有する加圧体と、該加圧体の軸部を弾
性体を介して揺動可能にかつ分離可能に保持するととも
に前記ばねに接触する移動可能な部材とを備えているこ
とが好ましい。
[0010] In the substrate polishing apparatus of the present invention, the pressing member includes a pressing member having a flat pressing surface for pressing the substrate, a shaft portion extending on the opposite side to the pressing surface, and a shaft portion of the pressing member. And a movable member that contacts the spring and that is capable of swingably and separably via an elastic body.

【0011】本発明の基板研磨装置において、前記微動
機構はマイクロメータねじを備え、該マイクロメータね
じを回転させることにより前記ばねの弾性力による前記
加圧部材の基板に対する加圧力を調整しうるように構成
されていることが好ましい。
In the substrate polishing apparatus according to the present invention, the fine movement mechanism includes a micrometer screw, and by rotating the micrometer screw, the pressing force of the pressing member against the substrate by the elastic force of the spring can be adjusted. It is preferable that it is comprised.

【0012】本発明の基板研磨装置において、前記微動
機構と前記加圧部材との間に圧力検出センサーが配設さ
れていることが好ましい。
In the substrate polishing apparatus of the present invention, it is preferable that a pressure detection sensor is disposed between the fine movement mechanism and the pressing member.

【0013】本発明の基板研磨装置において、基板を保
持する円板状のキャリアは、その外周面に接触する少な
くとも2個の支持ローラにより支持され、該支持ローラ
を駆動する駆動手段により基板とともに回転駆動される
ように構成されていることが好ましい。
In the substrate polishing apparatus of the present invention, the disc-shaped carrier holding the substrate is supported by at least two support rollers in contact with the outer peripheral surface thereof, and is rotated together with the substrate by driving means for driving the support rollers. Preferably, it is configured to be driven.

【0014】本発明の基板研磨装置において、基板の研
磨中に基板の回転方向を一定周期で反転させながら基板
の研磨を行うことが好ましい。
In the substrate polishing apparatus of the present invention, it is preferable that the substrate is polished while reversing the rotation direction of the substrate at a constant period during the polishing of the substrate.

【0015】[0015]

【作用】本発明の基板研磨装置によれば、研磨基板を裏
面側から加圧する複数の加圧制御機構は、それぞれ、荷
重治具に取り付けられた微動機構、基板の裏面に当接し
て加圧する加圧部材、および加圧部材と微動機構との間
に配置されて加圧部材にばね弾性力を作用させるばね等
から構成され、ばねの弾性力により基板に対する加圧力
を作用させるとともに微動機構を調節することによりそ
の加圧力を調整することができるように形成されている
ことにより、研磨基板の表面形状に応じて基板に対する
加圧力を簡単な構成で容易に調整することができ、しか
も加圧調整範囲も大きくとることができる。さらに、基
板の膜厚むらの分布に応じて各加圧制御機構毎に加圧力
を変化させることにより基板に対する加圧力分布を容易
に変更することができるために、膜厚むらの分布に応じ
て加圧制御機構の簡単な操作で加圧力分布の変更を行っ
て基板膜厚の厚みむらを効率よく研磨除去することを可
能にする。
According to the substrate polishing apparatus of the present invention, the plurality of pressure control mechanisms for pressing the polishing substrate from the back side respectively press the fine movement mechanism attached to the load jig, and press against the back surface of the substrate. A pressure member, and a spring or the like disposed between the pressure member and the fine movement mechanism to apply a spring elastic force to the pressure member. By being formed so that the pressing force can be adjusted by adjusting, the pressing force on the substrate can be easily adjusted with a simple configuration according to the surface shape of the polishing substrate, and the pressing The adjustment range can be widened. Further, the pressure distribution for the substrate can be easily changed by changing the pressure for each pressure control mechanism according to the distribution of the film thickness unevenness of the substrate. The pressure distribution can be changed by a simple operation of the pressure control mechanism, so that the unevenness in the thickness of the substrate can be efficiently removed by polishing.

【0016】[0016]

【発明の実施の形態】本発明の実施の形態を図面に基づ
いて説明する。
Embodiments of the present invention will be described with reference to the drawings.

【0017】図1は、本発明の基板研磨装置を一部破断
して示す概略構成図であり、図2は、本発明の基板研磨
装置における荷重治具を固定した円板状のキャリアの下
面図であり、図3は、本発明の基板研磨装置における加
圧制御機構を示す部分断面図である。
FIG. 1 is a schematic structural view showing the substrate polishing apparatus of the present invention partially cut away, and FIG. 2 is a bottom view of a disk-shaped carrier to which a load jig is fixed in the substrate polishing apparatus of the present invention. FIG. 3 is a partial sectional view showing a pressure control mechanism in the substrate polishing apparatus of the present invention.

【0018】図1において、円板状のキャリア2は、矩
形状の基板収容穴3内に被研磨物である大面積の矩形状
の基板1を保持して、基板1の被研磨面を研磨定盤4の
上に貼り付けられている研磨シート5に接するように載
置される。円板状のキャリア2は、研磨定盤4の上方に
配置された少なくとも2個の支持ローラ9、10に支持
され、その位置で支持ローラ9を回転駆動する回転駆動
モータ11により回転駆動されるように構成され、ま
た、研磨定盤4は図示しない回転駆動機構により回転駆
動されるように構成されている。基板1を裏面側から研
磨シート5に対して加圧する加圧手段は、基板1の裏面
側を個々に加圧するように配列された複数の加圧制御機
構7と、円板状のキャリア2の上面に固定され、複数の
加圧制御機構7を保持する荷重治具8とを備え、複数の
加圧制御機構7は基板1をその裏面側から樹脂パッド6
を介して加圧し、基板1の被研磨面を研磨シート5に対
して押圧する。なお、樹脂パッド6は加圧制御機構7に
よる加圧により基板1の裏面が損傷されるのを防止する
作用をする。
In FIG. 1, a disc-shaped carrier 2 holds a large-area rectangular substrate 1 as an object to be polished in a rectangular substrate receiving hole 3 and polishes the surface of the substrate 1 to be polished. It is placed so as to be in contact with the polishing sheet 5 stuck on the surface plate 4. The disc-shaped carrier 2 is supported by at least two support rollers 9 and 10 disposed above the polishing platen 4, and is rotationally driven at that position by a rotational drive motor 11 that rotationally drives the support rollers 9. The polishing platen 4 is configured to be rotationally driven by a rotation driving mechanism (not shown). The pressing means for pressing the substrate 1 against the polishing sheet 5 from the back side includes a plurality of pressure control mechanisms 7 arranged so as to individually press the back side of the substrate 1, and a disk-shaped carrier 2. A load jig 8 fixed to the upper surface and holding a plurality of pressure control mechanisms 7; the plurality of pressure control mechanisms 7
To press the polished surface of the substrate 1 against the polishing sheet 5. The resin pad 6 functions to prevent the back surface of the substrate 1 from being damaged by the pressure applied by the pressure control mechanism 7.

【0019】円板状のキャリア2の中央部に形成される
基板収容穴3は、図2に図示するように、矩形状の基板
1を収容しうるように基板1の外形寸法よりやや大きい
矩形状に形成されており、基板収容穴3の各辺には、基
板の研磨時に基板1の横移動により基板1が衝突すると
きの衝撃を緩和するための樹脂製の側板12がそれぞれ
取り付けられている。また、キャリア2の研磨シート5
に当接する下面には基板の研磨時に研磨シート5と基板
1の被研磨面との間に研磨液を供給するための研磨液流
入用の溝13が複数設けられ、さらに、側板12にも研
磨液流入用の溝13に連通する溝14が設けられてい
る。
As shown in FIG. 2, the substrate receiving hole 3 formed in the center of the disc-shaped carrier 2 has a rectangular shape slightly larger than the outer dimensions of the substrate 1 so as to receive the rectangular substrate 1. A resin side plate 12 is attached to each side of the substrate receiving hole 3 to alleviate the impact when the substrate 1 collides with the substrate 1 during lateral polishing during polishing of the substrate. I have. The polishing sheet 5 of the carrier 2
A plurality of grooves 13 for supplying a polishing liquid for supplying a polishing liquid between the polishing sheet 5 and the surface to be polished of the substrate 1 at the time of polishing the substrate are provided on the lower surface in contact with the substrate. A groove 14 communicating with the groove 13 for liquid inflow is provided.

【0020】円板状のキャリア2を支持する少なくとも
2個の支持ローラ9、10(図1にのみ図示する)は、
研磨シート5上に載置されるキャリア2の外周面に接触
係合して、基板の研磨時に回転する研磨シート5との摩
擦によりキャリア2が横移動しないように支持する。支
持ローラ9に連結された回転駆動モータ11としては、
基板1の研磨時に生じる研磨摩擦以上の回転トルクを発
生することができるモータを用い、そして、支持ローラ
9、10の外周面およびキャリア2の外周面には高摩擦
コートを施して、回転駆動モータ11の正逆どちら方向
の回転に対しても支持ローラ9、10とキャリア2の間
でスリップが生じないようにする。この構成によって、
円板状のキャリア2は、支持ローラ9、10によって横
移動しないように支持され、そして、回転駆動モータ1
1により支持ローラ9を介して確実に回転駆動される。
この際に、キャリア2の基板収容穴3内に収容されてい
る基板1も同時に回転し、さらにキャリア2の上面に固
定されている加圧手段の荷重治具8もともに回転する。
At least two support rollers 9 and 10 (only shown in FIG. 1) for supporting the disc-shaped carrier 2
The carrier 2 is in contact with the outer peripheral surface of the carrier 2 placed on the polishing sheet 5 and supports the carrier 2 so as not to move laterally due to friction with the rotating polishing sheet 5 when polishing the substrate. The rotation drive motor 11 connected to the support roller 9 includes:
A motor capable of generating a rotational torque greater than the polishing friction generated during polishing of the substrate 1 is used. The outer peripheral surfaces of the support rollers 9 and 10 and the outer peripheral surface of the carrier 2 are coated with a high friction so that a rotational drive motor No slip occurs between the support rollers 9 and 10 and the carrier 2 with respect to the rotation of the carrier 11 in either the forward or reverse direction. With this configuration,
The disc-shaped carrier 2 is supported by supporting rollers 9 and 10 so as not to move laterally.
1 reliably rotates via the support roller 9.
At this time, the substrate 1 accommodated in the substrate accommodation hole 3 of the carrier 2 also rotates at the same time, and the load jig 8 of the pressing means fixed on the upper surface of the carrier 2 also rotates.

【0021】キャリア2の上面に固定される加圧手段の
荷重治具8は、矩形状の基板1と平面視略同形状に形成
され、その各辺から突出する突出片8aを介してねじ等
の固定手段により着脱自在に固定され、基板1を裏面側
から加圧する複数の加圧制御機構7(図2には、5行5
列の25個を並列した例を示し、加圧制御機構7の加圧
体27のみが見えている)を保持する。
The load jig 8 of the pressing means fixed to the upper surface of the carrier 2 is formed in substantially the same shape as the rectangular substrate 1 in a plan view, and screws or the like are provided through protruding pieces 8a protruding from each side thereof. A plurality of pressure control mechanisms 7 (in FIG. 2, five rows and five rows) which pressurize the substrate 1 from the back side.
An example is shown in which 25 rows are arranged in parallel, and only the pressure body 27 of the pressure control mechanism 7 is visible.)

【0022】荷重治具8には、図3に詳細に図示するよ
うに、複数の加圧制御機構7をそれぞれ収納するための
複数の貫通孔15が並列して設けられ、貫通孔15には
内面を摩擦が少ない材料で作製した円筒状のブッシュ1
6が嵌合され、その下端部は貫通孔15の下端部に設け
られているストッパー17により保持される。
As shown in detail in FIG. 3, the load jig 8 is provided with a plurality of through holes 15 for accommodating a plurality of pressure control mechanisms 7, respectively. Cylindrical bush 1 whose inner surface is made of a material with low friction
6 is fitted, and its lower end is held by a stopper 17 provided at the lower end of the through hole 15.

【0023】円筒状のブッシュ16内にそれぞれ収納さ
れる加圧制御機構7は、荷重治具8の上面に固定フラン
ジ21を介して取り付けられて下方に延びるマイクロメ
ータスピンドル22を有するマイクロメータねじヘッド
20(微動機構)と、マイクロメータスピンドル22の
先端部にリード線23aを有する圧力検出センサー23
を介して取り付けられた円板状部材24と、ばね弾性力
により基板1への加圧力を発生するコイルばね25と、
基板1の裏面側に載置される樹脂パッド6を介して基板
1を加圧する金属製の加圧体27を着脱自在に保持する
円筒状移動部材26(加圧部材)とを備え、コイルばね
25のばね弾性力により基板1を加圧する加圧力を作用
させるとともに、マイクロメータねじヘッド20を回転
調節することによりその加圧力を調整することができる
ように構成されている。なお、コイルばね25の上端部
と下端部にそれぞれ当接する円板状部材24および円筒
状移動部材26は、円筒状のブッシュ16の内面が低摩
擦材料で形成されているために、ブッシュ16内でスム
ーズに摺動することができ、また、円筒状移動部材26
は、荷重治具8の貫通孔15の下端部に設けられている
ストッパー17によりブッシュ16から抜け落ちないよ
うに保持される。
The pressure control mechanism 7 housed in the cylindrical bush 16 is a micrometer screw head having a micrometer spindle 22 attached to the upper surface of the load jig 8 via a fixed flange 21 and extending downward. 20 (fine movement mechanism) and a pressure detection sensor 23 having a lead wire 23a at the tip of a micrometer spindle 22
A disc-shaped member 24 attached via a coil spring 25 for generating a pressing force on the substrate 1 by a spring elastic force;
A cylindrical moving member 26 (pressing member) for detachably holding a metal pressurizing member 27 for pressing the substrate 1 via the resin pad 6 placed on the back side of the substrate 1, and a coil spring The pressurizing force for pressing the substrate 1 is applied by the spring elastic force of 25, and the pressurizing force can be adjusted by adjusting the rotation of the micrometer screw head 20. The disk-shaped member 24 and the cylindrical moving member 26 that are in contact with the upper end and the lower end of the coil spring 25 respectively have the inner surface of the cylindrical bush 16 formed of a low-friction material. And can slide smoothly.
Is held by the stopper 17 provided at the lower end of the through hole 15 of the load jig 8 so as not to fall off the bush 16.

【0024】また、加圧体27は、基板1の裏面を加圧
する下面が平坦に形成され、その形状は、図2には円形
状のものを図示するけれども、円形状に限定されるもの
ではなく、矩形状やその他の多角形状等に適宜設定する
ことができ、また、その大きさも適宜設定することがで
き、例えば、互いに隣接する加圧体27の側周面が互い
に接するような大きさとすることもできる。また、加圧
体27の上面には上方に延びる軸部28が設けられてお
り、この軸部28は、円筒状移動部材26に設けられた
上下方向に延びる穴26aにOリング等の弾性体29
a、29bを介して嵌合されて着脱自在に取り付けられ
る。弾性体29aは円筒状移動部材26の穴26aの底
部分と軸部28の上面との間に介装され、弾性体29b
は穴26aの内周面と軸部28の外側面との間に挿入さ
れている。これらのOリング等の弾性体29a、29b
は、その弾性作用により、加圧体27の軸部28を円筒
状移動部材26の穴26a内で揺動しうるように保持
し、加圧体27が基板1に対して押圧される際に、加圧
体27の下面が基板に対して常に平行に接するように姿
勢を変更して、部分接触による荷重の集中を防ぐ作用を
する。加圧体27の形状や寸法は、前述したように、種
々変更することができ、基板の加圧状態や加圧分布等に
より交換変更して所定の加圧分布曲線を得るように適宜
変化させることができる。
The pressing body 27 has a flat lower surface for pressing the back surface of the substrate 1 and has a circular shape in FIG. 2, but is not limited to a circular shape. Instead, it can be appropriately set to a rectangular shape or another polygonal shape, and the size can also be set appropriately. For example, the size is set so that the side peripheral surfaces of the pressing bodies 27 adjacent to each other are in contact with each other. You can also. A shaft 28 extending upward is provided on the upper surface of the pressurizing body 27. The shaft 28 is provided with an elastic body such as an O-ring in a vertically extending hole 26 a provided in the cylindrical moving member 26. 29
a and 29b, and are detachably attached. The elastic body 29a is interposed between the bottom of the hole 26a of the cylindrical moving member 26 and the upper surface of the shaft 28, and the elastic body 29b
Is inserted between the inner peripheral surface of the hole 26a and the outer surface of the shaft portion 28. These elastic bodies 29a and 29b such as O-rings
Holds the shaft portion 28 of the pressing body 27 so as to be able to swing within the hole 26a of the cylindrical moving member 26 by its elastic action, and when the pressing body 27 is pressed against the substrate 1, The posture is changed so that the lower surface of the pressurizing member 27 is always in parallel contact with the substrate, thereby preventing the load from being concentrated due to partial contact. As described above, the shape and dimensions of the pressurizing body 27 can be variously changed, and are appropriately changed so as to obtain a predetermined pressurization distribution curve by changing the exchange according to the pressurization state of the substrate, the pressurization distribution, and the like. be able to.

【0025】以上のように構成される加圧制御機構7に
おいて、荷重治具8の上面に固定されているマイクロメ
ータねじヘッド20を回動させることにより、コイルば
ね25を介して円筒状移動部材26に保持される加圧体
27を上下に移動させ、基板1に対する加圧力を調整す
ることができる。すなわち、マイクロメータねじヘッド
20の回転によりそのマイクロメータスピンドル22を
伸縮させて、円板状部材24をブッシュ16内で上下方
向に移動させ、この円板状部材24の上下方向の移動は
コイルばね25を介して円筒状移動部材26および加圧
体27に伝えられ、加圧体27の基板1に対する加圧力
を調整することができる。そして、加圧体27の基板1
に対する加圧力を変化させる際にその加圧力は、圧力検
出センサー23により計測され、リード線23aを介し
て外部で確認することができ、圧力検出センサー23に
よる検出結果を確認しながら、マイクロメータねじヘッ
ド20の回転を適宜調節して、基板1に対する加圧力を
設定することができる。このように、荷重治具8に保持
される複数の加圧制御機構7において、個々にマイクロ
メータねじヘッド20を回転調節することによってコイ
ルばね25のばね変位を変えることにより、個々の加圧
力を変更することができ、このようにねじの変位差によ
りコイルばねの変位差を生じさせて基板に対する加圧力
を変化させ、所望の加圧分布を得ることができる。
In the pressure control mechanism 7 configured as described above, by rotating the micrometer screw head 20 fixed on the upper surface of the load jig 8, the cylindrical moving member is moved via the coil spring 25. The pressing body 27 held by 26 can be moved up and down to adjust the pressing force on the substrate 1. That is, the rotation of the micrometer screw head 20 causes the micrometer spindle 22 to expand and contract to move the disk-shaped member 24 in the vertical direction in the bush 16, and the disk-shaped member 24 is moved in the vertical direction by a coil spring. The pressure is transmitted to the cylindrical moving member 26 and the pressurizing body 27 via the pressurizing member 25, and the pressing force of the pressurizing body 27 on the substrate 1 can be adjusted. Then, the substrate 1 of the pressing body 27
When the applied pressure is changed, the applied pressure is measured by the pressure detection sensor 23 and can be externally confirmed through the lead wire 23a. The pressure on the substrate 1 can be set by appropriately adjusting the rotation of the head 20. As described above, in the plurality of pressurizing control mechanisms 7 held by the load jigs 8, by individually adjusting the rotation of the micrometer screw head 20 to change the spring displacement of the coil spring 25, the individual pressurizing forces are reduced. In this way, the displacement difference of the screw causes the displacement difference of the coil spring to change the pressure applied to the substrate, so that a desired pressure distribution can be obtained.

【0026】次に、以上のように構成される基板研磨装
置により基板を研磨する際の作動について説明する。
Next, the operation when the substrate is polished by the substrate polishing apparatus configured as described above will be described.

【0027】矩形状の基板1は、円板状のキャリア2の
基板収容穴3内に収容され、その裏面には樹脂パッド6
を介して複数の加圧制御機構7の加圧体27を当接させ
た状態で、研磨定盤4上に貼り付けられた研磨シート5
上に載置される。このとき、複数の加圧制御機構7の加
圧体27のそれぞれの加圧力は、研磨する基板1の被研
磨面の表面状態により適宜設定することができ、例え
ば、基板全面を均等に研磨する際には、全ての加圧制御
機構7の加圧力を一定にする。また、基板に膜厚むらが
生じている際には複数の加圧制御機構7のそれぞれを調
整して膜厚むらの分布に応じた加圧力分布を設定する。
加圧制御機構7の加圧力の調整は、それぞれ、圧力検出
センサー23で加圧力を計測しながらマイクロメータね
じヘッド20を調節して行う。
The rectangular substrate 1 is accommodated in the substrate accommodation hole 3 of the disc-shaped carrier 2, and the resin pad 6
The polishing sheet 5 attached to the polishing platen 4 in a state where the pressing bodies 27 of the plurality of pressing control mechanisms 7 are in contact with each other through the
Placed on top. At this time, the pressing force of each of the pressurizing bodies 27 of the plurality of pressurizing control mechanisms 7 can be appropriately set according to the surface condition of the surface to be polished of the substrate 1 to be polished. At this time, the pressures of all the pressure control mechanisms 7 are made constant. When the film thickness is uneven on the substrate, each of the plurality of pressure control mechanisms 7 is adjusted to set a pressure distribution according to the distribution of the film thickness unevenness.
The adjustment of the pressurizing force of the pressurizing control mechanism 7 is performed by adjusting the micrometer screw head 20 while measuring the pressurizing force by the pressure detection sensor 23, respectively.

【0028】そして、研磨定盤4を図示しない回転駆動
機構により回転駆動して研磨シート5を回転させるとと
もに、回転駆動モータ11を作動させて支持ローラ9を
介して円板状のキャリア2を回転させる。このとき、円
板状のキャリア2は支持ローラ9、10で支持されてい
る位置で回転する。この円板状のキャリア2の回転によ
り、キャリア2に固定されている荷重治具8およびキャ
リア2の基板収容穴3に収容されている基板1はともに
回転する。これにより、研磨しようとする基板1は、そ
の裏面側に複数の加圧制御機構7の加圧体27がそれぞ
れ当接して、加圧制御機構7によりそれぞれ設定されて
いる加圧力をもって研磨定盤4上の研磨シート5に押圧
され、そして、研磨定盤4上の研磨シート5の回転とと
もに回転駆動モータ11による円板状のキャリア2の回
転によって、基板1と研磨シート5の相対運動により研
磨が行われる。この際に、研磨シート5上に供給される
研磨液は、キャリア2および側板12の下面に設けられ
ている複数の溝13、14を介して、研磨シート5と基
板1の被研磨面の間に流入する。また、このとき、キャ
リア2や基板1は、研磨シート5の回転により研磨摩擦
力が付与されるが、キャリア2は、研磨摩擦以上の回転
トルクが回転駆動モータ11から支持ローラ9を介して
与えられることにより支持ローラ9、10で支持された
位置で回転する。また、研磨に際して円板状のキャリア
2を常に一定方向に回転させると圧力検出センサー23
のリード線23aが捩れてくるので、それを防ぐよう
に、一定時間毎に円板状のキャリア2の回転方向を切り
換えることが好ましい。
The polishing platen 4 is rotated by a rotary drive mechanism (not shown) to rotate the polishing sheet 5, and the rotary drive motor 11 is operated to rotate the disc-shaped carrier 2 via the support roller 9. Let it. At this time, the disc-shaped carrier 2 rotates at a position supported by the support rollers 9 and 10. Due to the rotation of the disc-shaped carrier 2, both the load jig 8 fixed to the carrier 2 and the substrate 1 accommodated in the substrate accommodation hole 3 of the carrier 2 rotate. As a result, the substrates 1 to be polished come into contact with the pressing members 27 of the plurality of pressing control mechanisms 7 on the back side thereof, and the polishing platen has a pressing force set by the pressing control mechanism 7 respectively. 4 is pressed by the polishing sheet 5 on the polishing platen 4, and is rotated by the rotation of the disk-shaped carrier 2 by the rotation drive motor 11 together with the rotation of the polishing sheet 5 on the polishing platen 4. Is performed. At this time, the polishing liquid supplied onto the polishing sheet 5 passes between the polishing sheet 5 and the surface to be polished of the substrate 1 through the plurality of grooves 13 and 14 provided on the lower surface of the carrier 2 and the side plate 12. Flows into. At this time, the carrier 2 and the substrate 1 are given a polishing frictional force by the rotation of the polishing sheet 5, and the carrier 2 gives a rotational torque equal to or more than the polishing friction from the rotary drive motor 11 via the support roller 9. As a result, it rotates at the position supported by the support rollers 9 and 10. Further, when the disc-shaped carrier 2 is always rotated in a fixed direction during polishing, the pressure detection sensor 23
It is preferable to switch the rotation direction of the disc-shaped carrier 2 at regular intervals so as to prevent the lead wire 23a from being twisted.

【0029】以上のように、本発明の複数の加圧制御機
構を備えた基板研磨装置においては、研磨基板の表面形
状に応じて基板に対する加圧力を簡単な構成で容易に調
整することができ、しかもその加圧調整範囲も大きくと
ることができる。さらに、基板の膜厚むらの分布に応じ
て各加圧制御機構毎の加圧力を変化させることにより基
板に対する加圧力分布を容易に変更することができるた
めに、膜厚むらの分布に応じて加圧制御機構の簡単な操
作で加圧力分布の変更を行って基板膜厚の厚みむらを効
率よく研磨除去することができる。
As described above, in the substrate polishing apparatus provided with a plurality of pressure control mechanisms according to the present invention, the pressure applied to the substrate can be easily adjusted with a simple configuration according to the surface shape of the substrate. In addition, the pressure adjustment range can be widened. Further, the pressure distribution on the substrate can be easily changed by changing the pressure applied to each pressure control mechanism according to the distribution of the film thickness non-uniformity of the substrate. By changing the pressure distribution with a simple operation of the pressure control mechanism, the unevenness in the thickness of the substrate can be efficiently removed by polishing.

【0030】次に、本発明の具体的な実施例についてさ
らに説明する。
Next, specific examples of the present invention will be further described.

【0031】研磨基板は、256×320mmの寸法で
厚み1.1mmの基板であり、その表面にCrの配線を
多数配置し、その上に厚み1μmのSi34 の絶縁膜
を付着してある。この基板上の絶縁膜を均一に研磨除去
するために本発明の基板研磨装置を用いて研磨除去し
た。このとき、基板裏面側の加圧制御機構7として、5
行5列に配置して25個の円板状の加圧面を有する加圧
体27に、1個当たり652g、総荷重16.3kgに
なるように圧力検出センサー23で計測しながらマイク
ロメータねじヘッド20を調節した。この状態で、研磨
定盤4の回転数を30rpm、基板1の回転数を30r
pmとし、120分間研磨した。そして、この研磨に際
しては、基板の回転方向(すなわち、円板状のキャリア
の回転方向)は10秒毎に正逆反対に切り換えながら研
磨を行った。その後に、絶縁膜の厚みを計測したとこ
ろ、絶縁膜の厚みは0.4μmに減少し、0.2μmの
厚さむらが生じていた。そこで、絶縁膜の厚みの厚い個
所に対しては加圧体27の加圧力を他の個所に比して大
きくして研磨除去量を多くするように加圧制御機構7を
調節して再度研磨除去を行った。その結果、膜厚のむら
は0.1μmに改善することができた。
The polished substrate is a substrate having dimensions of 256 × 320 mm and a thickness of 1.1 mm, on which a number of Cr wirings are arranged, and a 1 μm-thick insulating film of Si 3 N 4 is adhered thereon. is there. In order to uniformly polish and remove the insulating film on the substrate, the insulating film was polished and removed using the substrate polishing apparatus of the present invention. At this time, as the pressure control mechanism 7 on the back side of the substrate, 5
A micrometer screw head is arranged on a pressing body 27 having 25 disk-shaped pressing surfaces, arranged in rows and five columns, while measuring with a pressure detecting sensor 23 such that each of the pressing bodies has 652 g and a total load of 16.3 kg. 20 was adjusted. In this state, the rotation speed of the polishing table 4 is 30 rpm, and the rotation speed of the substrate 1 is 30 rpm.
pm and polished for 120 minutes. In this polishing, polishing was performed while switching the direction of rotation of the substrate (that is, the direction of rotation of the disc-shaped carrier) in the opposite direction every 10 seconds. After that, when the thickness of the insulating film was measured, the thickness of the insulating film was reduced to 0.4 μm, and unevenness in thickness of 0.2 μm occurred. Therefore, for a portion where the thickness of the insulating film is thick, the pressing force of the pressurizing member 27 is increased as compared with the other portions, and the pressure control mechanism 7 is adjusted so as to increase the removal amount by polishing. Removal was performed. As a result, the thickness unevenness could be reduced to 0.1 μm.

【0032】また、研磨基板を寸法が256×320m
mで厚み1.1mmの基板とし、その表面に付着した薄
膜を均等に研磨除去するために本発明の基板研磨装置を
用いて研磨除去した。このとき、初期の研磨として、加
圧制御機構7の加圧体27の加圧面の形状を51×63
mmの矩形状にして5行5列の25個配置して研磨を行
い、そして、研磨除去が進行して除去むらが大きくなっ
た後に、φ20mmの円板形状の加圧面を有する加圧体
を5行5列の25個配置して、各円板状の加圧体のばね
押し付け作用力を膜厚むらに応じた加圧力分布となるよ
うにそれぞれ再調整して研磨除去を行った。この結果、
膜厚むらをなくすることができた。
The size of the polished substrate is 256 × 320 m.
A substrate having a thickness of 1.1 mm and a thickness of 1.1 mm was polished and removed using the substrate polishing apparatus of the present invention in order to uniformly polish and remove the thin film adhered to the surface. At this time, as the initial polishing, the shape of the pressing surface of the pressing body 27 of the pressing control mechanism 7 is set to 51 × 63.
Polishing is performed by arranging 25 pieces in a 5 mm × 5 mm rectangular shape and 5 rows × 5 columns, and after the polishing removal progresses and the removal unevenness increases, a pressing body having a φ20 mm disk-shaped pressing surface is removed. 25 pieces were arranged in 5 rows and 5 columns, and the spring pressing force of each disc-shaped pressurizing member was readjusted so as to have a pressing force distribution according to the film thickness unevenness, and polishing and removal were performed. As a result,
The film thickness unevenness could be eliminated.

【0033】このように、大面積の研磨基板上に形成さ
れた薄膜を均一に研磨除去する際に、予め設定された均
一な加圧力で膜厚の途中まで研磨除去した後に、膜厚の
分布状態を測定し、その膜厚のむらの分布に応じて複数
の加圧体のそれぞれを簡単な操作により基板に対する加
圧力を変更して再度研磨するようにし、膜厚のむらが所
定の値以下になるまで研磨除去を繰り返すことにより、
基板全面が平坦で厚みむらの少ない基板を得ることがで
きる。
As described above, when the thin film formed on a large-area polished substrate is uniformly polished and removed, the thin film is polished and removed to a middle of the film thickness by a predetermined uniform pressing force, and then the film thickness distribution is reduced. The state is measured, each of the plurality of pressure bodies is polished again by changing the pressure applied to the substrate by a simple operation according to the distribution of the film thickness unevenness, and the film thickness unevenness becomes a predetermined value or less. By repeating polishing removal until
It is possible to obtain a substrate having a flat entire surface and less unevenness in thickness.

【0034】[0034]

【発明の効果】以上説明したように、本発明によれば、
研磨基板の表面形状に応じて基板に対する加圧力を簡単
な構成で容易に調整することができ、しかも加圧調整範
囲も大きくとることができる。さらに、基板の膜厚むら
の分布に応じて各加圧制御機構毎の加圧力を変化させる
ことにより基板に対する加圧力分布を容易に変更するこ
とができるために、膜厚むらの分布に応じて加圧制御機
構の簡単な操作で加圧力分布の変更を行って基板膜厚の
厚みむらを効率よく研磨除去することができる。
As described above, according to the present invention,
The pressing force on the substrate can be easily adjusted with a simple configuration according to the surface shape of the polishing substrate, and the pressure adjustment range can be widened. Further, the pressure distribution on the substrate can be easily changed by changing the pressure applied to each pressure control mechanism according to the distribution of the film thickness non-uniformity of the substrate. By changing the pressure distribution with a simple operation of the pressure control mechanism, the unevenness in the thickness of the substrate can be efficiently removed by polishing.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の基板研磨装置を一部破断して示す概略
構成図である。
FIG. 1 is a schematic configuration diagram showing a substrate polishing apparatus according to the present invention, partially cut away.

【図2】本発明の基板研磨装置における荷重治具を固定
した円板状のキャリアの下面図である。
FIG. 2 is a bottom view of a disc-shaped carrier to which a load jig is fixed in the substrate polishing apparatus of the present invention.

【図3】本発明の基板研磨装置における加圧制御機構を
示す部分断面図である。
FIG. 3 is a partial sectional view showing a pressure control mechanism in the substrate polishing apparatus of the present invention.

【図4】従来の基板研磨装置の一例を示す概略構成図で
ある。
FIG. 4 is a schematic configuration diagram illustrating an example of a conventional substrate polishing apparatus.

【符号の説明】[Explanation of symbols]

1 (矩形状)基板 2 (円板状)キャリア 3 基板収容穴 4 研磨定盤 5 研磨シート 6 樹脂パッド 7 加圧制御機構 8 荷重治具 9、10 支持ローラ 11 回転駆動モータ 12 側板 13、14 溝 16 ブッシュ 17 ストッパー 20 マイクロメータねじヘッド 21 固定フランジ 22 マイクロメータスピンドル 23 圧力検出センサー 24 円板状部材 25 コイルばね 26 円筒状移動部材 26a 穴 27 加圧体 28 軸部 29a、29b Oリング(弾性体) Reference Signs List 1 (rectangular) substrate 2 (disk-shaped) carrier 3 substrate receiving hole 4 polishing platen 5 polishing sheet 6 resin pad 7 pressure control mechanism 8 load jig 9, 10 support roller 11 rotation drive motor 12 side plate 13, 14 Groove 16 Bush 17 Stopper 20 Micrometer screw head 21 Fixed flange 22 Micrometer spindle 23 Pressure detection sensor 24 Disc-shaped member 25 Coil spring 26 Cylindrical moving member 26a Hole 27 Pressing body 28 Shaft 29a, 29b O-ring (elastic body)

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 研磨シートを貼り付けた研磨定盤を回転
させるとともに、基板の裏面側に配設した加圧手段によ
り基板を研磨シートに対して加圧しながら該基板を回転
させて、基板を研磨する基板研磨装置において、 前記加圧手段は、基板裏面を個々に加圧するように配置
された複数の加圧制御機構と該複数の加圧制御機構を保
持する荷重治具とを備え、前記加圧制御機構は、前記荷
重治具に取り付けられた微動機構と、基板の裏面に当接
して加圧する加圧部材と、該加圧部材と前記微動機構と
の間に配置されて前記加圧部材にばね弾性力を作用させ
るばねを有し、前記微動機構を調節することにより前記
ばねの弾性力による前記加圧部材の基板に対する加圧力
を調整することができるように構成されていることを特
徴とする基板研磨装置。
1. A polishing platen to which a polishing sheet is attached is rotated, and the substrate is rotated while pressing the substrate against the polishing sheet by a pressing means disposed on the back surface side of the substrate, thereby rotating the substrate. In a substrate polishing apparatus for polishing, the pressing means includes a plurality of pressing control mechanisms arranged to individually press the back surface of the substrate, and a load jig holding the plurality of pressing control mechanisms, The pressure control mechanism includes a fine movement mechanism attached to the load jig, a pressure member that abuts against the back surface of the substrate and pressurizes, and the pressure control mechanism that is disposed between the pressure member and the fine movement mechanism. A member for applying a spring elastic force to the member, and by adjusting the fine movement mechanism, it is possible to adjust a pressing force of the pressing member against the substrate by an elastic force of the spring. Characteristic substrate polishing equipment.
【請求項2】 前記荷重治具は、基板の研磨に際して基
板を前記研磨シートに当接するように収容する基板収容
穴が形成された円板状のキャリアの上面に着脱自在に固
定されていることを特徴とする請求項1記載の基板研磨
装置。
2. The load jig is detachably fixed to an upper surface of a disk-shaped carrier having a substrate receiving hole for receiving a substrate so as to contact the polishing sheet when polishing the substrate. The substrate polishing apparatus according to claim 1, wherein:
【請求項3】 前記加圧部材は、基板を加圧する平坦な
加圧面と該加圧面と反対側に延びる軸部を有する加圧体
と、該加圧体の軸部を弾性体を介して揺動可能にかつ分
離可能に保持するとともに前記ばねに接触する移動可能
な部材とを備えていることを特徴とする請求項1または
2記載の基板研磨装置。
3. The pressing member includes a pressing member having a flat pressing surface for pressing the substrate, a shaft portion extending on a side opposite to the pressing surface, and a shaft portion of the pressing member via an elastic member. The substrate polishing apparatus according to claim 1, further comprising a movable member that is swingably and separably held and that comes into contact with the spring.
【請求項4】 前記微動機構はマイクロメータねじを備
え、該マイクロメータねじを回転させることにより前記
ばねの弾性力による前記加圧部材の基板に対する加圧力
を調整しうるように構成されていることを特徴とする請
求項1ないし3のいずれか1項に記載の基板研磨装置。
4. The micro-movement mechanism includes a micrometer screw, and is configured such that by rotating the micrometer screw, the pressing force of the pressing member against the substrate by the elastic force of the spring can be adjusted. The substrate polishing apparatus according to any one of claims 1 to 3, wherein:
【請求項5】 前記微動機構と前記加圧部材との間に圧
力検出センサーが配設されていることを特徴とする請求
項1ないし4のいずれか1項に記載の基板研磨装置。
5. The substrate polishing apparatus according to claim 1, wherein a pressure detection sensor is provided between the fine movement mechanism and the pressing member.
【請求項6】 基板を保持する円板状のキャリアは、そ
の外周面に接触する少なくとも2個の支持ローラにより
支持され、該支持ローラを駆動する駆動手段により基板
とともに回転駆動されるように構成されていることを特
徴とする請求項1ないし5のいずれか1項に記載の基板
研磨装置。
6. A disk-shaped carrier for holding a substrate is supported by at least two support rollers in contact with the outer peripheral surface thereof, and is driven to rotate together with the substrate by drive means for driving the support rollers. The substrate polishing apparatus according to claim 1, wherein the substrate is polished.
【請求項7】 基板の研磨中に基板の回転方向を一定周
期で反転させながら基板の研磨を行うことを特徴とする
請求項1ないし6のいずれか1項に記載の基板研磨装
置。
7. The substrate polishing apparatus according to claim 1, wherein the substrate is polished while reversing the rotation direction of the substrate at a constant period during the polishing of the substrate.
JP2000233830A 2000-08-02 2000-08-02 Base polishing apparatus Pending JP2002046059A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000233830A JP2002046059A (en) 2000-08-02 2000-08-02 Base polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000233830A JP2002046059A (en) 2000-08-02 2000-08-02 Base polishing apparatus

Publications (1)

Publication Number Publication Date
JP2002046059A true JP2002046059A (en) 2002-02-12

Family

ID=18726297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000233830A Pending JP2002046059A (en) 2000-08-02 2000-08-02 Base polishing apparatus

Country Status (1)

Country Link
JP (1) JP2002046059A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083917A1 (en) * 2002-03-28 2003-10-09 Shin-Etsu Handotai Co.,Ltd. Double side polishing device for wafer and double side polishing method
WO2004087371A1 (en) * 2003-03-31 2004-10-14 Fujitsu Limited Machining method and machining device
JP2005169556A (en) * 2003-12-10 2005-06-30 Tdk Corp Polishing device and polishing method
US6951502B2 (en) 2002-03-29 2005-10-04 Hoya Corporation Method of determining a flatness of an electronic device substrate, method of producing the substrate, method of producing a mask blank, method of producing a transfer mask, polishing method, electronic device substrate, mask blank, transfer mask, and polishing apparatus
WO2005105373A1 (en) * 2004-05-04 2005-11-10 Shinhan Diamond Co., Ltd. Diamond tools
CN102350744A (en) * 2011-08-11 2012-02-15 汪远银 Fixture for automatic slicing type CT machine
KR101383958B1 (en) * 2013-01-18 2014-04-14 주식회사 엘지실트론 Wafer mounting apparatus
CN108177063A (en) * 2018-01-15 2018-06-19 贵阳锐航智能科技有限公司 A kind of Multifunctional hand-held electric grinding machine
CN108519275A (en) * 2018-03-15 2018-09-11 中国工程物理研究院化工材料研究所 A kind of small tonnage multi-path pressure load testing machine
JP2019130652A (en) * 2018-02-02 2019-08-08 浜井産業株式会社 Single-sided polishing device
CN110744463A (en) * 2019-10-14 2020-02-04 重庆长安工业(集团)有限责任公司 Micrometer combined grinder
JP2020044626A (en) * 2018-09-20 2020-03-26 株式会社荏原製作所 Polishing head and polishing device
CN112045547A (en) * 2020-09-29 2020-12-08 湖南宇环精密制造有限公司 Double-station polishing machine
CN112059886A (en) * 2020-09-29 2020-12-11 湖南宇环精密制造有限公司 Double-station polishing pressure balancing device
CN112405324A (en) * 2020-10-15 2021-02-26 东莞市新美洋技术有限公司 Grinding clamp for sheet product
CN112605789A (en) * 2020-11-29 2021-04-06 厦门理工学院 Track control type polishing mechanism with adjustable gravity center and polishing method
CN112621458A (en) * 2020-11-29 2021-04-09 厦门理工学院 Spring type polishing disc mechanism with adjustable gravity center and polishing method
CN112894608A (en) * 2021-01-22 2021-06-04 宁波云德半导体材料有限公司 Adjustable quartz grinding device
CN114603474A (en) * 2020-12-03 2022-06-10 长鑫存储技术有限公司 Pressure detection system
CN118181088A (en) * 2024-05-17 2024-06-14 山东鼎驰木业集团有限公司 Portable polishing device for wooden house
US12042902B2 (en) 2020-12-03 2024-07-23 Changxin Memory Technologies, Inc. Force measurement system
US12066345B2 (en) 2020-12-03 2024-08-20 Changxin Memory Technologies, Inc. Force measurement system and force measurement method

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003083917A1 (en) * 2002-03-28 2003-10-09 Shin-Etsu Handotai Co.,Ltd. Double side polishing device for wafer and double side polishing method
CN100380600C (en) * 2002-03-28 2008-04-09 信越半导体株式会社 Double side polishing device for wafer and double side polishing method
US7364495B2 (en) 2002-03-28 2008-04-29 Etsu Handotai Co., Ltd. Wafer double-side polishing apparatus and double-side polishing method
US6951502B2 (en) 2002-03-29 2005-10-04 Hoya Corporation Method of determining a flatness of an electronic device substrate, method of producing the substrate, method of producing a mask blank, method of producing a transfer mask, polishing method, electronic device substrate, mask blank, transfer mask, and polishing apparatus
KR100773187B1 (en) * 2002-03-29 2007-11-02 호야 가부시키가이샤 Method of determining a flatness of an electronic device substrate, method of producing the substrate, method of producing a mask blank, method of producing a transfer mask, polishing method, electronic device substrate, mask blank, transfer mask, and polishing apparatus
US7455785B2 (en) 2002-03-29 2008-11-25 Hoya Corporation Method of determining a flatness of an electronic device substrate, method of producing the substrate, method of producing a mask blank, method of producing a transfer mask, polishing method, electronic device substrate, mask blank, transfer mask, and polishing apparatus
US7534159B2 (en) 2003-03-31 2009-05-19 Fujitsu Limited Processing method and apparatus
WO2004087371A1 (en) * 2003-03-31 2004-10-14 Fujitsu Limited Machining method and machining device
WO2004087372A1 (en) * 2003-03-31 2004-10-14 Fujitsu Limited Finishing method and finishing device
JP2005169556A (en) * 2003-12-10 2005-06-30 Tdk Corp Polishing device and polishing method
WO2005105373A1 (en) * 2004-05-04 2005-11-10 Shinhan Diamond Co., Ltd. Diamond tools
CN102350744A (en) * 2011-08-11 2012-02-15 汪远银 Fixture for automatic slicing type CT machine
KR101383958B1 (en) * 2013-01-18 2014-04-14 주식회사 엘지실트론 Wafer mounting apparatus
CN108177063A (en) * 2018-01-15 2018-06-19 贵阳锐航智能科技有限公司 A kind of Multifunctional hand-held electric grinding machine
JP2019130652A (en) * 2018-02-02 2019-08-08 浜井産業株式会社 Single-sided polishing device
JP7106067B2 (en) 2018-02-02 2022-07-26 浜井産業株式会社 Single side polisher
CN108519275A (en) * 2018-03-15 2018-09-11 中国工程物理研究院化工材料研究所 A kind of small tonnage multi-path pressure load testing machine
CN108519275B (en) * 2018-03-15 2020-09-01 中国工程物理研究院化工材料研究所 Small-tonnage multichannel pressure loading test device
JP2020044626A (en) * 2018-09-20 2020-03-26 株式会社荏原製作所 Polishing head and polishing device
JP7158223B2 (en) 2018-09-20 2022-10-21 株式会社荏原製作所 Polishing head and polishing equipment
CN110744463A (en) * 2019-10-14 2020-02-04 重庆长安工业(集团)有限责任公司 Micrometer combined grinder
CN112059886A (en) * 2020-09-29 2020-12-11 湖南宇环精密制造有限公司 Double-station polishing pressure balancing device
CN112045547A (en) * 2020-09-29 2020-12-08 湖南宇环精密制造有限公司 Double-station polishing machine
CN112405324A (en) * 2020-10-15 2021-02-26 东莞市新美洋技术有限公司 Grinding clamp for sheet product
CN112605789A (en) * 2020-11-29 2021-04-06 厦门理工学院 Track control type polishing mechanism with adjustable gravity center and polishing method
CN112621458A (en) * 2020-11-29 2021-04-09 厦门理工学院 Spring type polishing disc mechanism with adjustable gravity center and polishing method
CN112605789B (en) * 2020-11-29 2022-05-24 厦门理工学院 Track control type polishing mechanism with adjustable gravity center and polishing method
CN114603474A (en) * 2020-12-03 2022-06-10 长鑫存储技术有限公司 Pressure detection system
US12042902B2 (en) 2020-12-03 2024-07-23 Changxin Memory Technologies, Inc. Force measurement system
US12066345B2 (en) 2020-12-03 2024-08-20 Changxin Memory Technologies, Inc. Force measurement system and force measurement method
CN112894608A (en) * 2021-01-22 2021-06-04 宁波云德半导体材料有限公司 Adjustable quartz grinding device
CN118181088A (en) * 2024-05-17 2024-06-14 山东鼎驰木业集团有限公司 Portable polishing device for wooden house

Similar Documents

Publication Publication Date Title
JP2002046059A (en) Base polishing apparatus
US7448940B2 (en) Polishing apparatus and polishing method
JP2000301450A (en) Cmp polishing pad and cmp processing device using it
JPH10309662A (en) Device and method for polishing object provided with flat surface, using belt-type abrasive pad
JPH09174399A (en) Polishing device and plashing method using this polishing device
KR100685744B1 (en) Platen assembly, wafer polishing apparatus having the same, and wafer polishing method
JPH06196456A (en) Wafer polishing device and method
JP3573924B2 (en) Polishing equipment
JPH1029153A (en) Semiconductor wafer polishing device
JP2002239894A (en) Polishing device
JP2000094301A (en) Substrate polishing method and substrate polishing device
JPH09225820A (en) Polishing device
JPH07290356A (en) Polishing device
JP2008036738A (en) Method and apparatus of polishing
JP3565480B2 (en) Substrate polishing method and substrate polishing apparatus
JP3944260B2 (en) Substrate polishing method and apparatus
JP2004283962A (en) Plane polishing method and plane polishing machine of plate work
JPH0760637A (en) Polishing device
TW436379B (en) A scalable multi-pad design for improved CMP process
JP3643686B2 (en) Wafer polishing method
JP2000024909A (en) Polishing device
JPH09141550A (en) Sheet-like substrate polishing method and polishing device therefor
JP2022126248A (en) Polishing device and polishing method
JPH10113863A (en) Method and device for positioning guide device for polishing and method for polishing thin plate-like substrate
JP2002334891A (en) Pin unit for transferring adhesive and method for transferring adhesive