JP2002043672A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JP2002043672A
JP2002043672A JP2000225602A JP2000225602A JP2002043672A JP 2002043672 A JP2002043672 A JP 2002043672A JP 2000225602 A JP2000225602 A JP 2000225602A JP 2000225602 A JP2000225602 A JP 2000225602A JP 2002043672 A JP2002043672 A JP 2002043672A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
resin
frame
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000225602A
Other languages
Japanese (ja)
Other versions
JP3806586B2 (en
Inventor
Yasuyuki Bessho
靖之 別所
Yasuhiro Watabe
泰弘 渡部
Masaharu Honda
正治 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2000225602A priority Critical patent/JP3806586B2/en
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to PCT/JP2001/005340 priority patent/WO2002007275A1/en
Priority to KR1020037000719A priority patent/KR100542336B1/en
Priority to CNB018129641A priority patent/CN1258252C/en
Priority to DE60129991T priority patent/DE60129991T2/en
Priority to EP01943807A priority patent/EP1313184B1/en
Priority to US10/333,072 priority patent/US6885076B2/en
Publication of JP2002043672A publication Critical patent/JP2002043672A/en
Priority to HK04100396A priority patent/HK1057654A1/en
Application granted granted Critical
Publication of JP3806586B2 publication Critical patent/JP3806586B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device structure capable of being smoothly mounted on an optical pickup or the like. SOLUTION: A semiconductor laser device 1 is equipped with a semiconductor laser element 4, a frame 6 possessed of an element mount 6a on which the element 4 is mounted, and a resin 5 surrounding the element mount 6a, where the resin 5 is provided with a window 5a, through which a laser beam is projected outside, at its front and smaller in width at its front edge than at its rear edge.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体レーザ装置に
関する。
[0001] The present invention relates to a semiconductor laser device.

【0002】[0002]

【従来の技術】フレームおよび樹脂からなるパッケージ
を用いた半導体レーザ装置は価格、量産性に優れ、注目
されている。このような半導体レーザ装置を光ピックア
ップ等に使用する場合、パッケージをレーザ光の出射方
向と同方向に挿入してセットすることが多い。そのた
め、挿入時に光ピックアップボディの挿入口に半導体レ
ーザ装置の樹脂部が当たったり、引っかかったりするこ
とが多い。
2. Description of the Related Art A semiconductor laser device using a package made of a frame and a resin has been attracting attention because of its excellent price and mass productivity. When such a semiconductor laser device is used for an optical pickup or the like, the package is often inserted and set in the same direction as the emission direction of the laser light. Therefore, the resin portion of the semiconductor laser device often hits or gets caught on the insertion opening of the optical pickup body at the time of insertion.

【0003】また、フレームの一部を樹脂の外にレーザ
光の出射方向と垂直方向に突出させて、その出射側の端
面を光ピックアップに組み込む時の基準面に使用してい
る。そのため、半導体レーザ装置が小型になり幅が小さ
くなった場合、その基準面も小さくなる問題がある。
In addition, a part of the frame is projected out of the resin in a direction perpendicular to the emission direction of the laser beam, and the end surface on the emission side is used as a reference surface when incorporated in an optical pickup. Therefore, when the semiconductor laser device is reduced in size and width is reduced, there is a problem that the reference plane is also reduced.

【0004】[0004]

【発明が解決しようとする課題】そこで本発明は、光ピ
ックアップ等への装着をスムースに行なうことのできる
構造を提供することを課題の1つとする。また、パッケ
ージを小型にしても基準面を大きく取れる構造を提供す
ることを課題の1つとする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a structure which can be mounted on an optical pickup or the like smoothly. Another object is to provide a structure capable of providing a large reference surface even when the package is downsized.

【0005】[0005]

【課題を解決するための手段】本発明の半導体レーザ装
置は請求項1に記載のように、半導体レーザ素子と、前
記素子を配置する素子配置部を有するフレームと、素子
配置部の周囲を囲む樹脂を備える半導体レーザ装置にお
いて、前記樹脂は、前方に前記半導体レーザ素子のレー
ザ出射窓を備えるとともに、前端の幅が後端の幅よりも
狭くなっていることを特徴とする。
According to a first aspect of the present invention, there is provided a semiconductor laser device which surrounds a semiconductor laser element, a frame having an element arrangement portion for disposing the element, and a periphery of the element arrangement portion. In a semiconductor laser device provided with a resin, the resin is provided with a laser emission window of the semiconductor laser element in front, and a width of a front end is smaller than a width of a rear end.

【0006】また、請求項2から4に記載のように、前
記樹脂は、その両側前端部にテーパー面を備えることが
でき、前記フレームは、その両側前端部にテーパー面を
備えることができ、前記フレームは、その前端面の上も
しくは下部にテーパー面を備えることができる。
Further, as set forth in claims 2 to 4, the resin may have tapered surfaces at both front ends thereof, and the frame may have tapered surfaces at both front ends thereof. The frame may have a tapered surface above or below its front end surface.

【0007】[0007]

【発明の実施の形態】以下本発明の実施形態について、
図面を参照して説明する。図1に半導体レーザ装置1の
斜視図を、図2に正面図を、図3に背面図を、図4にレー
ザ光の出射方向X(光軸X)に沿った断面図を示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below.
This will be described with reference to the drawings. FIG. 1 is a perspective view of the semiconductor laser device 1, FIG. 2 is a front view, FIG. 3 is a rear view, and FIG. 4 is a cross-sectional view along the laser light emission direction X (optical axis X).

【0008】この実施形態の半導体レーザ装置1は、フ
レーム2の上面にサブマウント3を配置固定し、このサ
ブマウント3の上面に半導体レーザ素子4を配置固定
し、フレーム2は密着した樹脂5で固定されている。
In the semiconductor laser device 1 of this embodiment, a submount 3 is disposed and fixed on the upper surface of a frame 2, and a semiconductor laser element 4 is disposed and fixed on the upper surface of the submount 3. Fixed.

【0009】フレーム2は、熱伝導性、導電性が良い金
属製で、銅や鉄やその合金などを加工して板状に形成し
ている。また、フレーム2は半導体レーザ素子を搭載す
る主フレーム6とこのフレーム6とは独立した配線用の
副フレーム7,8の複数のフレームからなり、これらを
前記樹脂5によって一体化することによりフレームパッ
ケージを構成している。
The frame 2 is made of a metal having good heat conductivity and conductivity, and is formed in a plate shape by processing copper, iron, an alloy thereof, or the like. The frame 2 is composed of a main frame 6 on which a semiconductor laser element is mounted, and a plurality of sub-frames 7 and 8 for wiring independent of the frame 6, and these are integrated by the resin 5 to form a frame package. Is composed.

【0010】主フレーム6は、素子配置部6aと電流通
路となるリード部6bと放熱用並びに位置決め用となる
左右の翼部6c、6dを一体に備えている。そして、主
フレーム6の厚さは、半導体レーザ素子3を搭載する素
子配置部6a及び翼部6c,6dの一部が厚く、翼部6
c,6dの一部とリード部6bが薄くなっている。この
例では、リード部6bの付根部分、すなわち素子配置部
6aとリード部6bの接続部分近傍を境界として、その
境界線よりも前方を厚肉部6e、後方を薄肉部6fとし
ている。副フレーム7,8は、リード部6bと同様に薄
肉に構成されているので、フレームをプレス加工によっ
て打ち抜いて形成する際の微細加工を容易に行なうこと
ができる。そのため、リード部分の間隔を狭く保って装
置の小型化を図ることができる。
The main frame 6 is integrally provided with an element arrangement portion 6a, a lead portion 6b serving as a current path, and left and right wing portions 6c and 6d used for heat radiation and positioning. The thickness of the main frame 6 is such that the element arrangement portion 6a on which the semiconductor laser element 3 is mounted and the wing portions 6c and 6d are partially thick.
A portion of the leads 6b and 6d and the lead portion 6b are thin. In this example, a thick portion 6e is located forward of the boundary, and a thin portion 6f is located behind the boundary, with the base portion of the lead portion 6b, that is, the vicinity of the connection portion between the element arrangement portion 6a and the lead portion 6b as the border. Since the sub-frames 7 and 8 are formed to be thin like the lead portions 6b, fine processing can be easily performed when the frames are formed by punching out the frames by pressing. Therefore, the size of the device can be reduced by keeping the interval between the lead portions small.

【0011】このように、レーザ光の出射方向に沿って
フレーム2の厚さが変化しており、それに伴って、レー
ザの出射方向と直交する方向に段差9が形成される。こ
の段差9は、半導体レーザ素子4が搭載されている面と
は反対側のフレーム裏面にあるが、素子4を搭載する面
と同じ側の面に形成することもできる。
As described above, the thickness of the frame 2 changes along the emission direction of the laser light, and accordingly, a step 9 is formed in a direction orthogonal to the emission direction of the laser. The step 9 is on the back surface of the frame opposite to the surface on which the semiconductor laser element 4 is mounted, but may be formed on the same side as the surface on which the element 4 is mounted.

【0012】主フレーム6の厚肉部6eは、素子配置部
6aと左右翼部6c,6dに跨って主フレーム6の全幅
に亙って形成されているので、フレーム2の強度増加を
図ることができる。そのため、左右翼部6c、6dを溝
に差し込んで装着する際に翼部6c,6dが変形するの
を防止することができる。また、素子配置部6aと左右
の翼部6c,6dの間に図2に破線で丸く示すように、
樹脂5を上下に連絡するための孔6iを形成している
が、この孔を肉厚部6eに形成することができるので、
前記樹脂連絡用の孔6iを大きく確保することができ
る。
Since the thick portion 6e of the main frame 6 is formed over the entire width of the main frame 6 across the element arrangement portion 6a and the left and right wing portions 6c and 6d, the strength of the frame 2 is to be increased. Can be. Therefore, it is possible to prevent the wings 6c, 6d from being deformed when the left and right wings 6c, 6d are inserted into the grooves and mounted. In addition, as shown by a broken line in FIG. 2 between the element arrangement portion 6a and the left and right wing portions 6c and 6d,
Although a hole 6i for connecting the resin 5 up and down is formed, since this hole can be formed in the thick portion 6e,
A large hole 6i for resin communication can be secured.

【0013】樹脂5は、フレーム2の表と裏側の面を挟
むように、例えばインサート成型して形成される。樹脂
5の表側は、レーザ光の出射用の窓5aを備えていて前
方が開いたU字状の枠5b形態をしている。この枠5b
の前側の幅Aは後側の幅Bに比べて狭くなっている。枠
5bの両側前端部分には、テーパー面5cを形成してい
る。このテーパー面5cの存在によって、半導体レーザ
装置1を所定位置に配置する際の挿入をスムーズに行な
うことができる。前記樹脂連絡用の円形の孔6iは、樹
脂の幅が広い部分に配置するために、前記テーパー面5
cよりも後方に配置している。
The resin 5 is formed, for example, by insert molding so as to sandwich the front and rear surfaces of the frame 2. The front side of the resin 5 is provided with a window 5a for emitting a laser beam, and is in the form of a U-shaped frame 5b with an open front. This frame 5b
Is smaller than the width B on the rear side. Tapered surfaces 5c are formed at both front ends of the frame 5b. The presence of the tapered surface 5c makes it possible to smoothly insert the semiconductor laser device 1 at a predetermined position. The circular hole 6i for connecting the resin is formed in the tapered surface 5 in order to arrange the resin in a wide portion.
It is arranged behind c.

【0014】樹脂5の裏側は、素子配置部6aを覆うよ
うにべた平坦面5dとなっており、表側の樹脂の外形と
同等の外形形状をなしている。すなわち、前側の幅Aは
後側の幅Bに比べて狭くなっている。樹脂の裏面の両側
前端部分には、テーパー面5eを形成している。このテ
ーパー面5eの存在によって、半導体レーザ装置を所定
位置に配置する際の挿入をスムーズに行なうことができ
る。また、レーザ装置1の裏面を構成するこの樹脂裏面
5dは、厚肉の素子配置部6aよりも広面積な支持平面
となっているので、レーザ装置1を所定の平面に配置す
る場合の安定性を高めることができる。
The back side of the resin 5 has a solid flat surface 5d so as to cover the element arrangement portion 6a, and has an outer shape equivalent to the outer shape of the resin on the front side. That is, the width A on the front side is smaller than the width B on the rear side. A tapered surface 5e is formed at both front end portions on the back surface of the resin. Due to the presence of the tapered surface 5e, insertion can be performed smoothly when the semiconductor laser device is arranged at a predetermined position. Further, since the resin back surface 5d constituting the back surface of the laser device 1 is a support plane having a larger area than the thick element placement portion 6a, the stability when the laser device 1 is disposed on a predetermined plane. Can be increased.

【0015】樹脂5の先端部分の幅が狭くなっているの
で、樹脂の両側に位置する翼部6c,6dの前端面の長
さをテーパー5cが存在しない場合に比べて長くするこ
とができる。そのため、翼部6c、6dの前端面を位置
きめ基準として利用する際の基準面を広く確保すること
ができる。特に、翼部の前端面は、リード部6bないし
副フレーム7,8に比べて厚肉であり、位置決め基準を
広く確保することができるので、この部分の長さを長く
することは位置きめを行なう上で有用である。
Since the width of the tip portion of the resin 5 is reduced, the length of the front end surfaces of the wing portions 6c and 6d located on both sides of the resin can be made longer than in the case where the taper 5c does not exist. Therefore, a wide reference surface can be secured when the front end surfaces of the wing portions 6c and 6d are used as position determination references. In particular, the front end surface of the wing portion is thicker than the lead portion 6b or the sub-frames 7, 8, and a wide positioning reference can be secured. Useful for doing.

【0016】主フレーム6の素子配置部6a、副フレー
ム7,8の樹脂5が存在しない部分は露出している。そ
して、この露出した素子配置部6aの上に、サブマウン
ト3を介在して半導体レーザ素子4が配置固定される。
その後、前記半導体レーザ素子4、サブマウント3、副
フレーム7,8の間でワイヤーボンド線などによる配線
が施される。
The portions of the main frame 6 where the resin 5 does not exist are exposed. Then, the semiconductor laser element 4 is arranged and fixed on the exposed element arrangement portion 6a via the submount 3.
Thereafter, wiring is performed between the semiconductor laser element 4, the submount 3, and the subframes 7 and 8 by a wire bond wire or the like.

【0017】サブマウント3はSiを母材とした受光素
子であり、半導体レーザ素子4の後面出射光をモニタす
ることができる。その他にも、例えばAlN、SiC、
Cuなど、熱伝導性の優れたセラミック、金属材料等を
用いることができる。受光素子をサブマウントに内蔵で
きない場合は、別に受光素子を搭載する。サブマウント
3は、Au−Sn、Pb−Sn等の半田材やAgペース
ト等を用いてフレーム2に固定される。
The submount 3 is a light receiving element using Si as a base material, and can monitor the light emitted from the rear surface of the semiconductor laser element 4. Besides, for example, AlN, SiC,
Ceramics, metal materials, and the like having excellent heat conductivity, such as Cu, can be used. If the light receiving element cannot be built into the submount, mount the light receiving element separately. The submount 3 is fixed to the frame 2 using a solder material such as Au-Sn, Pb-Sn, or an Ag paste.

【0018】半導体レーザ素子4は、Au−Sn、Pb
−Sn等の半田材やAgペースト等を用いてサブマウン
ト3の所定の位置に固定される。
The semiconductor laser element 4 is made of Au-Sn, Pb
It is fixed to a predetermined position of the submount 3 using a solder material such as -Sn or an Ag paste.

【0019】上記実施形態は、樹脂5の表側もしくは裏
側の両側前端部にテーパー面5c,5eを形成した例を
示したが、図5に示すように、翼部6c、6dにも同様
のテーパー面6gを形成することができる。このテーパ
ー面6g、6gは、主フレーム6の両側面前端部に形成
される。また、図6に示すように、翼部6c、6dの前
端面にも、その上下の少なくとも一方の側に、テーパー
面6hを形成することができる。これらのテーパー面の
存在によって、上記実施形態と同様に、装置1を挿入す
る際の動作をよりスムーズに行なうことができる。
In the above embodiment, the tapered surfaces 5c and 5e are formed at the front end portions on both sides of the resin 5 on the front side or the back side. However, as shown in FIG. Surface 6g can be formed. The tapered surfaces 6g, 6g are formed at the front end portions of both sides of the main frame 6. Also, as shown in FIG. 6, a tapered surface 6h can be formed on the front end surfaces of the wing portions 6c and 6d on at least one of the upper and lower sides. Due to the presence of these tapered surfaces, the operation when inserting the device 1 can be performed more smoothly, as in the above embodiment.

【0020】[0020]

【発明の効果】以上のように、本発明によれば、半導体
レーザ装置を光ピックアップなどに挿入する際の作業性
を良好にすることができる。また、フレームの一部を位
置決め基準に用いる際にその面積を広く確保することが
できる。
As described above, according to the present invention, workability when inserting a semiconductor laser device into an optical pickup or the like can be improved. Further, when a part of the frame is used as a positioning reference, a large area can be secured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施形態を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.

【図2】同実施形態の正面図である。FIG. 2 is a front view of the embodiment.

【図3】同実施形態の背面図である。FIG. 3 is a rear view of the embodiment.

【図4】同実施形態の断面図である。FIG. 4 is a sectional view of the same embodiment.

【図5】他の実施形態の背面図である。FIG. 5 is a rear view of another embodiment.

【図6】他の実施形態の側面図である。FIG. 6 is a side view of another embodiment.

【符号の説明】[Explanation of symbols]

1 半導体レーザ装置 2 フレーム 4 半導体レーザ素子 5 樹脂 6 主フレーム 7 副フレーム 8 副フレーム 9 段差 REFERENCE SIGNS LIST 1 semiconductor laser device 2 frame 4 semiconductor laser element 5 resin 6 main frame 7 subframe 8 subframe 9 step

───────────────────────────────────────────────────── フロントページの続き (72)発明者 渡部 泰弘 鳥取県鳥取市南吉方3丁目201番地 鳥取 三洋電機株式会社内 (72)発明者 本多 正治 鳥取県鳥取市南吉方3丁目201番地 鳥取 三洋電機株式会社内 Fターム(参考) 5F073 BA04 FA02 FA13 FA22 FA27 FA28  ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yasuhiro Watanabe 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Electric Co., Ltd. (72) Inventor Masaharu Honda 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Tottori F-term (reference) in Denki Co., Ltd. 5F073 BA04 FA02 FA13 FA22 FA27 FA28

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体レーザ素子と、前記素子を配置す
る素子配置部を有するフレームと、素子配置部の周囲を
囲む樹脂を備える半導体レーザ装置において、前記樹脂
は、前方に前記半導体レーザ素子のレーザ出射窓を備え
るとともに、前端の幅が後端の幅よりも狭くなっている
ことを特徴とする半導体レーザ装置。
1. A semiconductor laser device comprising: a semiconductor laser element; a frame having an element arrangement section for disposing the element; and a resin surrounding a periphery of the element arrangement section; A semiconductor laser device comprising an emission window, wherein a width of a front end is smaller than a width of a rear end.
【請求項2】 前記樹脂は、その両側前端部にテーパー
面を備えていることを特徴とする請求項1記載の半導体
レーザ装置。
2. The semiconductor laser device according to claim 1, wherein the resin has a tapered surface at both front ends.
【請求項3】 前記フレームは、その両側前端部にテー
パー面を備えていることを特徴とする請求項1あるいは
請求項2記載の半導体レーザ装置。
3. The semiconductor laser device according to claim 1, wherein said frame has a tapered surface at both front ends.
【請求項4】 前記フレームは、その前端面の上もしく
は下部にテーパー面を備えていることを特徴とする請求
項3記載の半導体レーザ装置。
4. The semiconductor laser device according to claim 3, wherein said frame has a tapered surface above or below a front end surface thereof.
JP2000225602A 2000-07-17 2000-07-26 Semiconductor laser device Expired - Fee Related JP3806586B2 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2000225602A JP3806586B2 (en) 2000-07-26 2000-07-26 Semiconductor laser device
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DE60129991T DE60129991T2 (en) 2000-07-17 2001-06-21 SEMICONDUCTOR LASER DEVICE
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EP01943807A EP1313184B1 (en) 2000-07-17 2001-06-21 Semiconductor laser device
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Publication number Priority date Publication date Assignee Title
KR100521920B1 (en) * 2002-03-28 2005-10-13 가부시끼가이샤 도시바 Semiconductor laser device
JP2006013551A (en) * 2002-03-25 2006-01-12 Sanyo Electric Co Ltd Semiconductor laser apparatus
JPWO2005039001A1 (en) * 2003-10-15 2007-11-22 三洋電機株式会社 Two-beam semiconductor laser device
JP2007324407A (en) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp Optical module
US7428255B2 (en) 2003-10-06 2008-09-23 Rohm Co., Ltd. Semiconductor laser
JP2009187983A (en) * 2008-02-01 2009-08-20 Shinko Electric Ind Co Ltd Frame package for laser element, and manufacturing method thereof
US8368098B2 (en) 2007-06-05 2013-02-05 Sharp Kabushiki Kaisha Light emitting device and manufacturing method thereof
US8422522B2 (en) 2008-06-17 2013-04-16 Sharp Kabushiki Kaisha Semiconductor laser device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013551A (en) * 2002-03-25 2006-01-12 Sanyo Electric Co Ltd Semiconductor laser apparatus
KR100521920B1 (en) * 2002-03-28 2005-10-13 가부시끼가이샤 도시바 Semiconductor laser device
US7428255B2 (en) 2003-10-06 2008-09-23 Rohm Co., Ltd. Semiconductor laser
JPWO2005039001A1 (en) * 2003-10-15 2007-11-22 三洋電機株式会社 Two-beam semiconductor laser device
US7724798B2 (en) 2003-10-15 2010-05-25 Sanyo Electric Co., Ltd. Two-beam semiconductor laser apparatus
US8126026B2 (en) 2003-10-15 2012-02-28 Sanyo Electric Co., Ltd. Two-beam semiconductor laser device
US8290015B2 (en) 2003-10-15 2012-10-16 Sanyo Electric Co., Ltd. Two-beam semiconductor laser apparatus
JP2007324407A (en) * 2006-06-01 2007-12-13 Mitsubishi Electric Corp Optical module
US8368098B2 (en) 2007-06-05 2013-02-05 Sharp Kabushiki Kaisha Light emitting device and manufacturing method thereof
JP2009187983A (en) * 2008-02-01 2009-08-20 Shinko Electric Ind Co Ltd Frame package for laser element, and manufacturing method thereof
US8422522B2 (en) 2008-06-17 2013-04-16 Sharp Kabushiki Kaisha Semiconductor laser device

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