JP2002043678A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JP2002043678A JP2002043678A JP2000225603A JP2000225603A JP2002043678A JP 2002043678 A JP2002043678 A JP 2002043678A JP 2000225603 A JP2000225603 A JP 2000225603A JP 2000225603 A JP2000225603 A JP 2000225603A JP 2002043678 A JP2002043678 A JP 2002043678A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- semiconductor laser
- resin
- laser device
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体レーザ装置に
関する。[0001] The present invention relates to a semiconductor laser device.
【0002】[0002]
【従来の技術】フレームおよび樹脂からなるパッケージ
を用いた半導体レーザ装置は価格、量産性に優れ、注目
されている。しかし、従来広く用いられている金属製の
キャンパッケージに比較すると放熱性が悪く、現在は温
度特性の良い赤外レーザに使用されているのみであり、
DVD用などの赤色レーザには用いられていない。ま
た、放熱性を改善するためにレーザ素子を配置する部分
を厚くし、底面から露出させる構造が提案されている
(特開平11−307871)。2. Description of the Related Art A semiconductor laser device using a package made of a frame and a resin has been attracting attention because of its excellent price and mass productivity. However, compared to metal can packages that have been widely used in the past, heat radiation is poor, and currently only infrared lasers with good temperature characteristics are used,
It is not used for red lasers for DVDs and the like. Further, there has been proposed a structure in which a portion where a laser element is disposed is made thicker to improve the heat radiation property and is exposed from the bottom surface (JP-A-11-307871).
【0003】上記のようにフレームの厚くした部分を裏
面樹脂から突出させるため、フレーム裏側に配置する樹
脂の厚さは、前記フレームの厚肉部分の突出を妨げない
ように薄くしなければならず、フレーム固定強度を高め
ることが困難である。また、フレームを樹脂裏側に突出
させるために厚肉部の段差をかなり大きくとらなければ
ならない上、厚肉部の面積が狭いために、半導体レーザ
装置裏面の平坦性が良くない。そのため、半導体レーザ
装置の取り扱いやセッティング時の安定性に問題が有
る。また、フレームパッケージタイプの半導体レーザ装
置を例えば光ピックアップに用いる場合、実際には底面
を光ピックアップのボディに接触させて放熱することは
ほとんどない。In order to protrude the thickened portion of the frame from the back surface resin as described above, the thickness of the resin disposed on the back side of the frame must be reduced so as not to hinder the protrusion of the thick portion of the frame. It is difficult to increase the frame fixing strength. In addition, the step of the thick portion must be made considerably large in order for the frame to protrude to the resin back side, and the flatness of the back surface of the semiconductor laser device is not good because the area of the thick portion is small. For this reason, there is a problem in handling and setting stability of the semiconductor laser device. In addition, when a frame package type semiconductor laser device is used for an optical pickup, for example, heat is hardly released by bringing the bottom surface into contact with the body of the optical pickup.
【0004】[0004]
【発明が解決しようとする課題】そこで本発明は、放熱
特性および強度を改善することを課題の1つとする。ま
た底面の平坦性を良くすることを課題の1つとする。ま
た、簡単な構造で量産性に優れたフレームパッケージを
提供することを課題の1つとする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve heat radiation characteristics and strength. Another object is to improve the flatness of the bottom surface. Another object is to provide a frame package having a simple structure and excellent mass productivity.
【0005】[0005]
【課題を解決するための手段】本発明の半導体レーザ装
置は、請求項1に記載のように、半導体レーザ素子と、
前記半導体レーザ素子を配置する素子配置部およびリー
ド部を有するフレームと、前記フレームに密着する樹脂
からなる半導体レーザ装置において、前記フレームは前
記素子配置部と前記リード部で厚さが異なるとともに裏
面に段差を有し、前記樹脂は前記段差部分を含めて前記
フレームの一部を覆って裏面に所定の支持平面を形成
し、前記支持平面は、前記素子配置部よりも大きな面積
であることを特徴とする。According to a first aspect of the present invention, there is provided a semiconductor laser device comprising: a semiconductor laser device;
In a semiconductor laser device comprising a frame having an element arrangement portion and a lead portion for disposing the semiconductor laser element and a resin adhered to the frame, the frame has a different thickness between the element arrangement portion and the lead portion and has A step, wherein the resin covers a part of the frame including the step portion to form a predetermined support plane on a back surface, and the support plane has a larger area than the element arrangement portion. And
【0006】また、請求項2に記載のように、前記支持
平面は、樹脂のべた平面、もしくは一部にくぼみを有す
る樹脂枠によって形成することができ、請求項3に記載
のように、前記フレームは前記樹脂の外側に翼部を備
え、この翼部は、前記リード部よりも厚肉とすることが
できる。Further, as described in claim 2, the support plane can be formed by a solid plane of a resin or a resin frame having a recess in a part thereof. The frame includes a wing outside the resin, and the wing may be thicker than the lead.
【0007】[0007]
【発明の実施の形態】以下本発明の実施形態について、
図面を参照して説明する。図1に半導体レーザ装置1の
斜視図を、図2に正面図を、図3に背面図を、図4にレー
ザ光の出射方向Xに沿った断面図を示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below.
This will be described with reference to the drawings. FIG. 1 is a perspective view of the semiconductor laser device 1, FIG. 2 is a front view, FIG. 3 is a rear view, and FIG. 4 is a cross-sectional view taken along a laser light emission direction X.
【0008】この実施形態の半導体レーザ装置1は、フ
レーム2の上面にサブマウント3を配置固定し、このサ
ブマウント3の上面に半導体レーザ素子4を配置固定
し、フレーム2は密着した樹脂5で固定されている。In the semiconductor laser device 1 of this embodiment, a submount 3 is disposed and fixed on the upper surface of a frame 2, and a semiconductor laser element 4 is disposed and fixed on the upper surface of the submount 3. Fixed.
【0009】フレーム2は、熱伝導性、導電性が良い金
属製で、銅や鉄やその合金などを加工して板状に形成し
ている。また、フレーム2は半導体レーザ素子を搭載す
る主フレーム6とこのフレーム6とは独立した配線用の
副フレーム7,8の複数のフレームからなり、これらを
前記絶縁性の樹脂5によって一体化することによりフレ
ームパッケージを構成している。The frame 2 is made of a metal having good heat conductivity and conductivity, and is formed in a plate shape by processing copper, iron, an alloy thereof, or the like. The frame 2 includes a main frame 6 on which a semiconductor laser element is mounted, and a plurality of sub-frames 7 and 8 for wiring independent of the frame 6. These are integrated by the insulating resin 5. Constitutes a frame package.
【0010】主フレーム6は、素子配置部6aと電流通
路となるリード部6bと放熱用もしくは位置決め用とな
る左右の翼部6c、6dを一体に備えている。そして、
主フレーム6の厚さは、半導体レーザ素子3を搭載する
素子配置部6a及び翼部6c,6dの一部が厚く、翼部
6c,6dの一部とリード部6bが薄くなっている。こ
の例では、リード部6bの付根部分、すなわち素子配置
部6aとリード部6baの接続部分近傍を境界として、
その境界線よりも前方を厚肉部6e、後方を薄肉部6f
としている。副フレーム7,8は、リード部6bと同様
に薄肉に構成されているので、フレームをプレス加工に
よって打ち抜いて形成する際の微細加工を容易に行なう
ことができる。そのため、リード部分の間隔を狭く保っ
て装置の小型化を図ることができる。The main frame 6 is integrally provided with an element arrangement portion 6a, a lead portion 6b serving as a current path, and left and right wing portions 6c and 6d for heat dissipation or positioning. And
The thickness of the main frame 6 is such that a part of the element arrangement part 6a on which the semiconductor laser element 3 is mounted and a part of the wing parts 6c and 6d are thick, and a part of the wing parts 6c and 6d and the lead part 6b are thin. In this example, the base portion of the lead portion 6b, that is, the vicinity of the connection portion between the element arrangement portion 6a and the lead portion 6ba is used as a boundary.
The thick portion 6e is located forward of the boundary line and the thin portion 6f is located behind the boundary.
And Since the sub-frames 7 and 8 are formed to be thin like the lead portions 6b, fine processing can be easily performed when the frames are formed by punching out the frames by pressing. Therefore, the size of the device can be reduced by keeping the interval between the lead portions small.
【0011】このように、レーザ光の出射方向X(光軸
X)に沿ってフレーム2の厚さが変化しており、それに
伴って、レーザの出射方向と直交する方向に段差9が形
成される。この段差9は、半導体レーザ素子4が搭載さ
れている面とは反対側のフレーム裏面にあるが、素子4
を搭載する面と同じ側の面に形成することもできる。As described above, the thickness of the frame 2 changes along the emission direction X (optical axis X) of the laser light, and accordingly, a step 9 is formed in a direction orthogonal to the emission direction of the laser. You. The step 9 is located on the back surface of the frame opposite to the surface on which the semiconductor laser element 4 is mounted.
Can be formed on the same side as the surface on which the is mounted.
【0012】主フレーム6の厚肉部6eは、素子配置部
6aと左右翼部6c,6dに跨って主フレーム6の全幅
に亙って形成されているので、フレーム2の放熱特性向
上と強度増加を図ることができる。The thick portion 6e of the main frame 6 is formed over the entire width of the main frame 6 across the element arrangement portion 6a and the left and right wing portions 6c and 6d. Increase can be achieved.
【0013】樹脂5は、フレーム2の表側の面に出射窓
5aが開いたU字状の枠5bを形成している。この枠5
bによって囲まれた領域において、主フレーム6の素子
配置部6a、副フレーム7,8の表面が露出している。
そして、この露出した素子配置部6aの上に、サブマウ
ント3を介在して半導体レーザ素子4が配置固定され
る。その後、前記半導体レーザ素子4、サブマウント
3、副フレーム7,8の間でワイヤーボンド線などによ
る配線が施される。The resin 5 forms a U-shaped frame 5b with an emission window 5a opened on the front surface of the frame 2. This frame 5
In the region surrounded by b, the surfaces of the element disposition portion 6a of the main frame 6 and the sub-frames 7, 8 are exposed.
Then, the semiconductor laser element 4 is arranged and fixed on the exposed element arrangement portion 6a via the submount 3. Thereafter, wiring is performed between the semiconductor laser element 4, the submount 3, and the subframes 7 and 8 by a wire bond wire or the like.
【0014】前記段差9を含む主フレーム6並びに副フ
レーム7.8の裏側の一部は、樹脂5の薄膜状の樹脂裏
面5dが覆っている。レーザ装置1の裏面を構成するこ
の樹脂裏面5dは、厚肉の素子配置部6aよりも広面積
な支持平面となっているので、レーザ装置1を所定の平
面に配置する場合の安定性を高めることができる。尚、
樹脂裏面5dは、前記のように支持平面を形成するため
に、べた平面とすることが好ましいが、支持平面を維持
できれば、べた平面の一部に素子配置部6aの裏面を露
出させるくぼみを形成することもできる。樹脂5のフレ
ーム2の上に位置する部分は、図2に示すように、その
前端部の幅Aが後端部の幅Bに比べて狭くなっており、
所望の位置に差し込みやすい形状としている。樹脂5の
フレーム2の下に位置する部分は、その前端部の幅Aと
後端部の幅Bを同じ幅に設定することができるが、図3
に示すように、フレーム2の上に位置する部分と同様
に、幅Aを幅Bよりも狭くして、所望の位置に差し込み
やすい形状としている。A part of the back side of the main frame 6 including the step 9 and the sub-frame 7.8 is covered with a thin resin back surface 5 d of the resin 5. Since the resin back surface 5d constituting the back surface of the laser device 1 is a support plane having a larger area than the thick element placement portion 6a, the stability when the laser device 1 is disposed on a predetermined plane is improved. be able to. still,
The resin back surface 5d is preferably a solid surface in order to form a support plane as described above. However, if the support plane can be maintained, a recess is formed in a part of the solid plane to expose the back surface of the element arrangement portion 6a. You can also. As shown in FIG. 2, a portion of the resin 5 located on the frame 2 has a width A at a front end thereof smaller than a width B at a rear end thereof.
The shape is such that it can be easily inserted into a desired position. In the portion of the resin 5 located below the frame 2, the width A of the front end and the width B of the rear end can be set to the same width.
As shown in the figure, the width A is narrower than the width B, as in the portion located on the frame 2, so that the shape can be easily inserted into a desired position.
【0015】サブマウント3はSiを母材とした受光素
子であり、半導体レーザ素子4の後面出射光をモニタす
ることができる。その他にも、例えばAlN、SiC、
Cuなど、熱伝導性の優れたセラミック、金属材料等を
サブマウント3に用いることができる。受光素子をサブ
マウント3に内蔵できない場合は、別に受光素子を搭載
する。サブマウント3は、Au−Sn、Pb−Sn等の
半田材やAgペースト等を用いてフレーム2に固定され
る。The submount 3 is a light receiving element made of Si as a base material, and can monitor the light emitted from the rear surface of the semiconductor laser element 4. Besides, for example, AlN, SiC,
Ceramics, metal materials, and the like having excellent thermal conductivity, such as Cu, can be used for the submount 3. If the light receiving element cannot be built in the submount 3, a light receiving element is separately mounted. The submount 3 is fixed to the frame 2 using a solder material such as Au-Sn, Pb-Sn, or an Ag paste.
【0016】半導体レーザ素子3は、Au−Sn、Pb
−Sn等の半田材やAgペースト等を用いてサブマウン
ト3の所定の位置に固定される。The semiconductor laser element 3 is made of Au—Sn, Pb
It is fixed to a predetermined position of the submount 3 using a solder material such as -Sn or an Ag paste.
【0017】[0017]
【発明の効果】以上のように、本発明によれば、フレー
ムパッケージタイプの半導体レーザ装置において、フレ
ームに段差が有るものを用いる場合においても、支持平
面を広くして安定性を高めることができる。また、フレ
ームの厚肉構造によって放熱特性および強度を改善する
ことができる。また、簡単な構造で量産性に優れたフレ
ームパッケージを提供することができる。As described above, according to the present invention, even when a frame package type semiconductor laser device having a step in the frame is used, the support plane can be widened and the stability can be improved. . Further, the heat dissipation characteristics and strength can be improved by the thick structure of the frame. Further, a frame package having a simple structure and excellent in mass productivity can be provided.
【図1】本発明の実施形態を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図2】同実施形態の正面図である。FIG. 2 is a front view of the embodiment.
【図3】同実施形態の背面図である。FIG. 3 is a rear view of the embodiment.
【図4】同実施形態の断面図である。FIG. 4 is a sectional view of the same embodiment.
1 半導体レーザ装置 2 フレーム 4 半導体レーザ素子 5 樹脂 6 主フレーム 7 副フレーム 8 副フレーム 9 段差 REFERENCE SIGNS LIST 1 semiconductor laser device 2 frame 4 semiconductor laser element 5 resin 6 main frame 7 subframe 8 subframe 9 step
───────────────────────────────────────────────────── フロントページの続き (72)発明者 渡部 泰弘 鳥取県鳥取市南吉方3丁目201番地 鳥取 三洋電機株式会社内 (72)発明者 本多 正治 鳥取県鳥取市南吉方3丁目201番地 鳥取 三洋電機株式会社内 Fターム(参考) 5F073 BA04 FA02 FA13 FA22 FA27 FA28 FA30 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yasuhiro Watanabe 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Electric Co., Ltd. (72) Inventor Masaharu Honda 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Tottori F-term (reference) in Denki Co., Ltd. 5F073 BA04 FA02 FA13 FA22 FA27 FA28 FA30
Claims (3)
素子を配置する素子配置部およびリード部を有するフレ
ームと、前記フレームに密着する樹脂からなる半導体レ
ーザ装置において、前記フレームは前記素子配置部と前
記リード部で厚さが異なるとともに裏面に段差を有し、
前記樹脂は前記段差部分を含めて前記フレームの一部を
覆って裏面に所定の支持平面を形成し、前記支持平面
は、前記素子配置部よりも大きな面積であることを特徴
とする半導体レーザ装置。1. A semiconductor laser device comprising: a semiconductor laser element; a frame having an element arrangement portion for disposing the semiconductor laser element and a lead portion; and a resin adhered to the frame. The thickness is different at the lead and there is a step on the back,
A semiconductor laser device, wherein the resin covers a part of the frame including the step portion to form a predetermined support plane on a back surface, and the support plane has a larger area than the element arrangement portion. .
くは一部にくぼみを有する樹脂枠によって形成されてい
ることを特徴とする請求項1記載の半導体レーザ装置。2. The semiconductor laser device according to claim 1, wherein the support plane is formed by a solid plane of a resin or a resin frame having a recess in a part thereof.
備え、この翼部は、前記リード部よりも厚肉であること
を特徴とする請求項1もしくは請求項2記載の半導体レ
ーザ装置。3. The semiconductor laser device according to claim 1, wherein the frame has a wing outside the resin, and the wing is thicker than the lead.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000225603A JP3723425B2 (en) | 2000-07-26 | 2000-07-26 | Semiconductor laser device |
PCT/JP2001/005340 WO2002007275A1 (en) | 2000-07-17 | 2001-06-21 | Semiconductor laser device |
EP01943807A EP1313184B1 (en) | 2000-07-17 | 2001-06-21 | Semiconductor laser device |
CNB018129641A CN1258252C (en) | 2000-07-17 | 2001-06-21 | Semiconductor laser device |
US10/333,072 US6885076B2 (en) | 2000-07-17 | 2001-06-21 | Semiconductor laser device |
DE60129991T DE60129991T2 (en) | 2000-07-17 | 2001-06-21 | SEMICONDUCTOR LASER DEVICE |
KR1020037000719A KR100542336B1 (en) | 2000-07-17 | 2001-06-21 | Semiconductor laser device |
HK04100396A HK1057654A1 (en) | 2000-07-17 | 2004-01-19 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000225603A JP3723425B2 (en) | 2000-07-26 | 2000-07-26 | Semiconductor laser device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005212679A Division JP3970293B2 (en) | 2005-07-22 | 2005-07-22 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002043678A true JP2002043678A (en) | 2002-02-08 |
JP3723425B2 JP3723425B2 (en) | 2005-12-07 |
Family
ID=18719348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000225603A Expired - Lifetime JP3723425B2 (en) | 2000-07-17 | 2000-07-26 | Semiconductor laser device |
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Country | Link |
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JP (1) | JP3723425B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150692A (en) * | 2003-10-21 | 2005-06-09 | Sharp Corp | Semiconductor laser device |
KR100568321B1 (en) | 2004-10-28 | 2006-04-05 | 삼성전기주식회사 | A semiconductor laser diode |
-
2000
- 2000-07-26 JP JP2000225603A patent/JP3723425B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005150692A (en) * | 2003-10-21 | 2005-06-09 | Sharp Corp | Semiconductor laser device |
KR100568321B1 (en) | 2004-10-28 | 2006-04-05 | 삼성전기주식회사 | A semiconductor laser diode |
Also Published As
Publication number | Publication date |
---|---|
JP3723425B2 (en) | 2005-12-07 |
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