JP2002043678A - Semiconductor laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is improved in heat dissipating properties, strength, and bottom evenness. SOLUTION: A semiconductor laser device 1 is composed of a semiconductor laser element 4, a frame 6 equipped with an element arranging part 6a on which the element 4 is arranged and a lead part 6, and a resin 5 coming into close contact with the frame 6. The frame 6 is equipped with the parts 6a and 6b different from each other in thickness and a stepped part 9 on its rear surface. The resin 5 is provided with a prescribed support flat 5d on its rear surface by covering a part of the frame 6 besides the stepped part 9, and the support flat 5d is larger in area than the element arranging part 6a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a semiconductor laser device.

[0002]

2. Description of the Related Art A semiconductor laser device using a package made of a frame and a resin has been attracting attention because of its excellent price and mass productivity. However, compared to metal can packages that have been widely used in the past, heat radiation is poor, and currently only infrared lasers with good temperature characteristics are used,
It is not used for red lasers for DVDs and the like. Further, there has been proposed a structure in which a portion where a laser element is disposed is made thicker to improve the heat radiation property and is exposed from the bottom surface (JP-A-11-307871).

In order to protrude the thickened portion of the frame from the back surface resin as described above, the thickness of the resin disposed on the back side of the frame must be reduced so as not to hinder the protrusion of the thick portion of the frame. It is difficult to increase the frame fixing strength. In addition, the step of the thick portion must be made considerably large in order for the frame to protrude to the resin back side, and the flatness of the back surface of the semiconductor laser device is not good because the area of the thick portion is small. For this reason, there is a problem in handling and setting stability of the semiconductor laser device. In addition, when a frame package type semiconductor laser device is used for an optical pickup, for example, heat is hardly released by bringing the bottom surface into contact with the body of the optical pickup.

[0004]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve heat radiation characteristics and strength. Another object is to improve the flatness of the bottom surface. Another object is to provide a frame package having a simple structure and excellent mass productivity.

[0005]

According to a first aspect of the present invention, there is provided a semiconductor laser device comprising: a semiconductor laser device;
In a semiconductor laser device comprising a frame having an element arrangement portion and a lead portion for disposing the semiconductor laser element and a resin adhered to the frame, the frame has a different thickness between the element arrangement portion and the lead portion and has A step, wherein the resin covers a part of the frame including the step portion to form a predetermined support plane on a back surface, and the support plane has a larger area than the element arrangement portion. And

Further, as described in claim 2, the support plane can be formed by a solid plane of a resin or a resin frame having a recess in a part thereof. The frame includes a wing outside the resin, and the wing may be thicker than the lead.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below.
This will be described with reference to the drawings. FIG. 1 is a perspective view of the semiconductor laser device 1, FIG. 2 is a front view, FIG. 3 is a rear view, and FIG. 4 is a cross-sectional view taken along a laser light emission direction X.

In the semiconductor laser device 1 of this embodiment, a submount 3 is disposed and fixed on the upper surface of a frame 2, and a semiconductor laser element 4 is disposed and fixed on the upper surface of the submount 3. Fixed.

The frame 2 is made of a metal having good heat conductivity and conductivity, and is formed in a plate shape by processing copper, iron, an alloy thereof, or the like. The frame 2 includes a main frame 6 on which a semiconductor laser element is mounted, and a plurality of sub-frames 7 and 8 for wiring independent of the frame 6. These are integrated by the insulating resin 5. Constitutes a frame package.

The main frame 6 is integrally provided with an element arrangement portion 6a, a lead portion 6b serving as a current path, and left and right wing portions 6c and 6d for heat dissipation or positioning. And
The thickness of the main frame 6 is such that a part of the element arrangement part 6a on which the semiconductor laser element 3 is mounted and a part of the wing parts 6c and 6d are thick, and a part of the wing parts 6c and 6d and the lead part 6b are thin. In this example, the base portion of the lead portion 6b, that is, the vicinity of the connection portion between the element arrangement portion 6a and the lead portion 6ba is used as a boundary.
The thick portion 6e is located forward of the boundary line and the thin portion 6f is located behind the boundary.
And Since the sub-frames 7 and 8 are formed to be thin like the lead portions 6b, fine processing can be easily performed when the frames are formed by punching out the frames by pressing. Therefore, the size of the device can be reduced by keeping the interval between the lead portions small.

As described above, the thickness of the frame 2 changes along the emission direction X (optical axis X) of the laser light, and accordingly, a step 9 is formed in a direction orthogonal to the emission direction of the laser. You. The step 9 is located on the back surface of the frame opposite to the surface on which the semiconductor laser element 4 is mounted.
Can be formed on the same side as the surface on which the is mounted.

The thick portion 6e of the main frame 6 is formed over the entire width of the main frame 6 across the element arrangement portion 6a and the left and right wing portions 6c and 6d. Increase can be achieved.

The resin 5 forms a U-shaped frame 5b with an emission window 5a opened on the front surface of the frame 2. This frame 5
In the region surrounded by b, the surfaces of the element disposition portion 6a of the main frame 6 and the sub-frames 7, 8 are exposed.
Then, the semiconductor laser element 4 is arranged and fixed on the exposed element arrangement portion 6a via the submount 3. Thereafter, wiring is performed between the semiconductor laser element 4, the submount 3, and the subframes 7 and 8 by a wire bond wire or the like.

A part of the back side of the main frame 6 including the step 9 and the sub-frame 7.8 is covered with a thin resin back surface 5 d of the resin 5. Since the resin back surface 5d constituting the back surface of the laser device 1 is a support plane having a larger area than the thick element placement portion 6a, the stability when the laser device 1 is disposed on a predetermined plane is improved. be able to. still,
The resin back surface 5d is preferably a solid surface in order to form a support plane as described above. However, if the support plane can be maintained, a recess is formed in a part of the solid plane to expose the back surface of the element arrangement portion 6a. You can also. As shown in FIG. 2, a portion of the resin 5 located on the frame 2 has a width A at a front end thereof smaller than a width B at a rear end thereof.
The shape is such that it can be easily inserted into a desired position. In the portion of the resin 5 located below the frame 2, the width A of the front end and the width B of the rear end can be set to the same width.
As shown in the figure, the width A is narrower than the width B, as in the portion located on the frame 2, so that the shape can be easily inserted into a desired position.

The submount 3 is a light receiving element made of Si as a base material, and can monitor the light emitted from the rear surface of the semiconductor laser element 4. Besides, for example, AlN, SiC,
Ceramics, metal materials, and the like having excellent thermal conductivity, such as Cu, can be used for the submount 3. If the light receiving element cannot be built in the submount 3, a light receiving element is separately mounted. The submount 3 is fixed to the frame 2 using a solder material such as Au-Sn, Pb-Sn, or an Ag paste.

The semiconductor laser element 3 is made of Au—Sn, Pb
It is fixed to a predetermined position of the submount 3 using a solder material such as -Sn or an Ag paste.

[0017]

As described above, according to the present invention, even when a frame package type semiconductor laser device having a step in the frame is used, the support plane can be widened and the stability can be improved. . Further, the heat dissipation characteristics and strength can be improved by the thick structure of the frame. Further, a frame package having a simple structure and excellent in mass productivity can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an embodiment of the present invention.

FIG. 2 is a front view of the embodiment.

FIG. 3 is a rear view of the embodiment.

FIG. 4 is a sectional view of the same embodiment.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor laser device 2 frame 4 semiconductor laser element 5 resin 6 main frame 7 subframe 8 subframe 9 step

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yasuhiro Watanabe 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Electric Co., Ltd. (72) Inventor Masaharu Honda 3-201 Minamiyoshikata, Tottori-shi, Tottori Sanyo Tottori F-term (reference) in Denki Co., Ltd. 5F073 BA04 FA02 FA13 FA22 FA27 FA28 FA30

Claims (3)

[Claims] 1. A semiconductor laser device comprising: a semiconductor laser element; a frame having an element arrangement portion for disposing the semiconductor laser element and a lead portion; and a resin adhered to the frame. The thickness is different at the lead and there is a step on the back,
A semiconductor laser device, wherein the resin covers a part of the frame including the step portion to form a predetermined support plane on a back surface, and the support plane has a larger area than the element arrangement portion. . 2. The semiconductor laser device according to claim 1, wherein the support plane is formed by a solid plane of a resin or a resin frame having a recess in a part thereof. 3. The semiconductor laser device according to claim 1, wherein the frame has a wing outside the resin, and the wing is thicker than the lead.