WO2021059805A1 - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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Publication number
WO2021059805A1
WO2021059805A1 PCT/JP2020/031365 JP2020031365W WO2021059805A1 WO 2021059805 A1 WO2021059805 A1 WO 2021059805A1 JP 2020031365 W JP2020031365 W JP 2020031365W WO 2021059805 A1 WO2021059805 A1 WO 2021059805A1
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WIPO (PCT)
Prior art keywords
semiconductor light
light emitting
emitting device
base
connection
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PCT/JP2020/031365
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French (fr)
Japanese (ja)
Inventor
浩之 田尻
秀之 内海
和剛 泉
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ローム株式会社
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Publication of WO2021059805A1 publication Critical patent/WO2021059805A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Definitions

  • This disclosure relates to a semiconductor light emitting device.
  • Patent Document 1 discloses an example of a conventional semiconductor laser device.
  • the semiconductor laser device disclosed in the document includes a stem and a semiconductor laser chip.
  • the stem is made of metal and has a plate-shaped base, a block that supports the semiconductor laser chip, and a plurality of leads fixed to the base. With such a configuration, when power is applied through the plurality of reeds, the laser beam from the semiconductor laser chip is emitted forward in the emission direction.
  • One of the plurality of leads is joined to the rear surface (rear surface) of the base in the exit direction.
  • This lead has an adhesive portion at the end, and the adhesive portion is joined to the rear surface by silver wax or welding.
  • This adhesive portion becomes a factor that lowers the stability at the time of mounting on the circuit board. For example, when mounting this semiconductor laser device on a mounting substrate, there is a risk that the semiconductor laser device will be mounted in a tilted state due to the adhesive portion. In order to improve the stability, it is necessary to take some measures in consideration of the bonded portion, which makes the mounting complicated.
  • An object of the present disclosure is to provide a semiconductor light emitting device that is easy to mount.
  • the semiconductor light emitting device includes a semiconductor light emitting element, a main surface and a back surface facing opposite sides, a through hole penetrating from the main surface to the back surface, and a connection recess formed on the back surface.
  • a base having a base, a first lead inserted through the through hole and supported by the base, and a second lead connected to the connection recess were provided.
  • the connecting portion of the second lead is housed in a connecting recess formed on the back surface of the base. Therefore, it is not necessary to support the semiconductor light emitting device so that it does not tilt, and a member such as a jig for suppressing the tilt of the semiconductor light emitting device is unnecessary, and the semiconductor light emitting device can be easily mounted.
  • this circuit it is possible to provide a semiconductor light emitting device capable of improving stability.
  • FIG. 2 is a sectional view taken along line 3-3 of FIG.
  • FIG. 2 is a sectional view taken along line 4-4 of FIG.
  • Explanatory drawing which shows the stem seen from the rear surface.
  • Partially enlarged cross-sectional view of the base and individual reeds Partially enlarged cross-sectional view of the base and common reed.
  • FIG. 5 is a cross-sectional view showing a mounting substrate and a semiconductor light emitting device.
  • FIG. 5 is a cross-sectional view showing a mounting substrate and a semiconductor light emitting device.
  • Top view of the semiconductor light emitting device of the modified example Sectional drawing of the semiconductor light emitting device of the modified example.
  • the "state in which the member A is connected to the member B" means that the member A and the member B are physically directly connected, and the member A and the member B are electrically connected. This includes the case of being indirectly connected via another member that does not affect the connection state.
  • a state in which the member C is provided between the member A and the member B means that the member A and the member C, or the member B and the member C are directly connected, and the member A. This includes the case where the member C and the member C, or the member B and the member C are indirectly connected via another member that does not affect the electrical connection state.
  • the semiconductor light emitting device A1 of the present embodiment includes a stem 10, a semiconductor light emitting element 40, and a wire 50.
  • the stem 10 supports the semiconductor light emitting element 40, and has a base 11, a heat sink 12, individual leads 13 and 14, common leads 15, and insulating materials 16 and 17.
  • the base 11 and the heat sink 12 are integrally formed.
  • the material of the stem 10 is not particularly limited, but is made of, for example, iron (Fe) or an Fe alloy.
  • the number of leads included in the stem 10 is not particularly limited. In the following description, a case where two individual leads 13 and 14 and one common lead 15 are provided will be described as an example.
  • the base 11 is a plate-shaped member.
  • the thickness direction of the base is defined as the thickness direction z.
  • the direction perpendicular to the thickness direction z is defined as the first direction x
  • the direction perpendicular to the thickness direction z and the first direction x is defined as the second direction y.
  • the base 11 has a substantially circular shape when viewed from the thickness direction z.
  • the base 11 has a main surface 111 and a back surface 112 facing opposite sides in the thickness direction z.
  • the base 11 is made of, for example, an Fe or Fe alloy. As an example of the size of the base 11, the diameter is about 5.6 mm and the thickness is about 1.2 mm.
  • the base 11 is formed with two through holes 21 and 22 that penetrate the base 11 in the thickness direction z.
  • the through holes 21 and 22 have a substantially circular shape when viewed from the thickness direction z, and the diameter thereof is the size through which the individual leads 13 and 14 are inserted.
  • the diameter of the through holes 21 and 22 is about 1.0 mm.
  • Through holes 21 and 22 are formed to fix the individual leads 13 and 14 to the base 11. As shown in FIG. 2, the through holes 21 and 22 of the present embodiment are arranged on a straight line passing through the center of a substantially circular base 11 when viewed from the thickness direction z.
  • the heat sink 12 is provided on the main surface 111 of the base 11.
  • the heat sink 12 is formed in a substantially fan shape, and a portion near the individual leads 14 projects along the first direction x.
  • the heat sink 12 has a support surface 121 at its center.
  • the heat sink 12 of the present embodiment has a connecting surface 122 at a protruding portion.
  • the support surface 121 is provided for mounting the semiconductor light emitting element 40, and the connection surface 122 is provided for connecting the wires.
  • the support surface 121 is a plane along the thickness direction z and the first direction x.
  • the heat sink 12 is made of, for example, an Fe, Fe alloy. In this embodiment, the heat sink 12 is integrally formed with the base 11.
  • a recess 23 is formed in the base 11.
  • the recess 23 is recessed from the main surface 111 in the thickness direction z.
  • the bottom surface of the recess 23 is formed so as to become deeper as the distance from the heat sink 12 increases in the second direction y.
  • the base 11 is formed with a connection recess 24 recessed from the back surface 112 of the base 11 in the thickness direction z.
  • the connection recess 24 is formed at a position overlapping the heat sink 12 when viewed from the thickness direction z.
  • the formation position of the connection recess 24 can be changed as appropriate.
  • the connection recess 24 is used to connect the common lead 15.
  • the connection recess 24 has a bottom surface 241 facing in the thickness direction z, and an inner wall surface 242 between the back surface 112 and the bottom surface 241 of the base 11.
  • the bottom surface 241 is flat.
  • the inner wall surface 242 has a cross section perpendicular to the back surface 112 of the base 11, a first wall surface 243 extending from the back surface 112 of the base 11 in the thickness direction z, and a quarter arc-shaped second wall surface 243 between the first wall surface 243 and the bottom surface 241. It has a wall surface 244.
  • the individual leads 13 and 14 and the common lead 15 are provided to fix the semiconductor light emitting device A1 to a mounting substrate or the like, and form a power supply path to the semiconductor light emitting element 40.
  • the individual leads 13 and 14 and the common lead 15 are made of, for example, a Fe—Ni alloy.
  • the diameters of the individual leads 13 and 14 and the common lead 15 are rod-shaped members of about 0.45 mm.
  • the individual leads 13 and 14 as the first leads are inserted into the through holes 21 and 22, respectively.
  • Insulating materials 16 and 17 are filled between the individual leads 13 and 14 and the through holes 21 and 22, respectively.
  • the insulating materials 16 and 17 are made of a material having electrical insulating properties. This material is, for example, glass.
  • the individual leads 13 and 14 are supported by the insulating materials 16 and 17 in a state of being electrically insulated from the base 11.
  • the individual lead 13 has a connection portion 131 and a terminal portion 132.
  • the connecting portion 131 is a portion protruding from the main surface 111 of the base 11, and the terminal portion 132 is a portion protruding from the back surface 112 of the base 11.
  • the connecting portion 131 is a portion connected to the semiconductor light emitting element 40 via the wire 50.
  • the terminal portion 132 is used when the semiconductor light emitting device A1 is mounted on the mounting substrate.
  • the length of the individual lead 13 is about 9.0 mm.
  • the length of the connecting portion 131 is about 1.5 mm.
  • the length of the terminal portion 132 is about 6.5 mm.
  • the individual lead 14 has a connection portion 141 and a terminal portion 142.
  • the connecting portion 141 is a portion protruding from the main surface 111 of the base 11, and the terminal portion 142 is a portion protruding from the back surface 112 of the base 11.
  • the length of the connecting portion 141 of the individual leads 14 is smaller than the length of the connecting portion 131 of the individual leads 13.
  • the connection portion 141 is a portion that is connected to the light receiving element via a wire, for example, when the light receiving element is mounted.
  • the terminal portion 142 is used when the semiconductor light emitting device A1 is mounted on the mounting substrate.
  • the length of the individual lead 14 is about 8.0 mm.
  • the length of the connecting portion 141 is about 0 to 0.2 mm.
  • the length of the terminal portion 142 is about 6.5 mm.
  • the common lead 15 as the second lead is connected to the base 11.
  • the common lead 15 has a connection portion 151 and a terminal portion 152.
  • the connection portion 151 is provided at one end of the terminal portion 152.
  • the terminal portion 152 has the same thickness as the individual leads 13 and 14.
  • the connection portion 151 has a shape with a larger diameter than the terminal portion 152, that is, the connection portion 151 is thicker than the terminal portion 152.
  • the end face of the connecting portion 151 is a connecting surface 153.
  • the common lead 15 is arranged so that the connection surface 153 of the connection portion 151 faces the bottom surface 241 of the connection recess 24 of the base 11. Then, the connection surface 153 and the bottom surface 241 are joined. Therefore, as shown in FIG. 5, the common lead 15 is connected at a position overlapping the heat sink 12 when viewed from the thickness direction z.
  • a joining method between the connecting surface 153 and the bottom surface 241 for example, silver brazing, resistance welding, or the like is used.
  • connection recess 24 is set to a size corresponding to the connection portion 151 of the common lead 15.
  • the area of the bottom surface 241 of the connection recess 24 is set to be larger than the area of the connection surface 153 of the connection portion 151.
  • the depth H1 of the connection recess 24, that is, the distance from the back surface 112 of the base 11 to the bottom surface 241 is preferably set to the length H2 or more of the connection portion 151.
  • the length H2 of the connecting portion 151 is the length of the connecting portion 151 in the extending direction of the common lead 15 (thickness direction z in FIG. 3). Therefore, the connecting portion 151 is housed in the connecting recess 24 and does not protrude from the back surface 112 of the base 11 in the thickness direction z.
  • the length (total length) of the common lead 15 is about 6.8 mm.
  • the length H2 of the connecting portion 151 is about 0.2 mm.
  • the semiconductor light emitting element 40 is, for example, a semiconductor laser chip.
  • the semiconductor light emitting device 40 of this embodiment has a laser element 41 and a submount 42.
  • the submount 42 is connected to the support surface 121 of the heat sink 12. As a result, the semiconductor light emitting element 40 is mounted on the support surface 121 of the heat sink 12.
  • the submount 42 is a support and a radiator of the laser element 41.
  • the submount 42 is made of, for example, silicon (Si) or aluminum nitride (AlN).
  • the submount 42 is formed with a wiring pattern for conducting the semiconductor light emitting element 40 and the heat sink 12 and a conduction path (not shown) such as a through-hole electrode.
  • the semiconductor light emitting element 40 may be mounted directly on the heat sink 12.
  • the semiconductor light emitting element 40 is connected to the individual leads 13 by a wire 50. More specifically, the semiconductor light emitting device 40 has a pad electrode (not shown) serving as a cathode, the first end of the wire 50 is connected to the pad electrode, and the second end of the wire 50 is connected to the individual lead 13. Has been done.
  • the wire 50 is made of, for example, gold (Au).
  • the semiconductor light emitting device 40 has a back surface electrode (not shown) serving as an anode on a surface opposite to the surface on which the pad electrode is formed, and the back surface electrode is connected to the submount 42.
  • the semiconductor light emitting element 40 is electrically connected to the common lead 15 via the heat sink 12 and the base 11. With such a configuration, in the semiconductor light emitting device, the electrode supply path to the semiconductor light emitting element 40 is formed by the individual leads 13 and 14 and the common lead 15.
  • the base 11 includes a main body portion 11a and a metal layer 11b that covers the surface of the main body portion 11a.
  • the heat sink 12 shown in FIG. 1 and the like also includes a main body and a metal layer. That is, the stem 10 of the present embodiment includes a main body portion and a metal layer covering the surface of the main body portion.
  • the main body 11a is made of, for example, Fe or Fe alloy.
  • Examples of the metal layer 11b include a plating layer made of Ni.
  • the base 11, the individual leads 14, and the common leads 15 are covered with the metal layer 18. Since the individual leads 13 shown in FIG. 1 and the like are covered with the metal layer 18 like the individual leads 14, the drawings and the description thereof will be omitted.
  • the metal layer 18 includes a first layer 181 and a second layer 182.
  • the first layer 181 covers the base 11, the individual leads 14, and the common leads 15.
  • the second layer 182 covers the surface of the first layer 181.
  • the first layer 181 is in contact with the base 11, the individual leads 14, and the common leads 15.
  • the second layer 182 is in contact with the first layer 181.
  • first layer 181 is a plating layer made of Ni, for example.
  • second layer 182 is a plating layer made of Au, for example.
  • the thickness of the first layer 181 is, for example, about 2.0 ⁇ m to 5.0 ⁇ m.
  • the thickness of the second layer 182 is, for example, about 0.05 ⁇ m to 1.0 ⁇ m.
  • the metal layer 18 is formed in a region avoiding between the base 11 of the stem 10 and the insulating material 17. That is, the metal layer 18 is formed on the main surface 111 of the base 11, the back surface 112 facing the opposite side of the main surface 111, the peripheral end surface, and the inner surface of the connection recess 24, and is not formed in the through hole 22. .. Further, the metal layer 18 is formed in a region avoiding between the individual leads 14 and the insulating material 17. That is, the metal layer 18 is formed in a portion of the individual leads 14 exposed from the insulating material 17.
  • the metal layer 18 is formed in a region avoiding between the common lead 15 and the base 11. That is, the metal layer 18 is formed in a region of the common lead 15 excluding the region joined to the bottom surface 241 of the connection recess 24 of the base 11.
  • the first layer 181 and the second layer 182 are formed by, for example, barrel plating.
  • the individual leads 13 and 14 and the common lead 15 are attached to the base 11, and then the first layer 181 and the second layer 182 are formed in this order by, for example, barrel plating. ..
  • the semiconductor light emitting device A1 is mounted on the mounting substrate 90.
  • the mounting substrate 90 has a base material 91 having a through hole 92 and a land 93 on the back surface 912 of the base material 91.
  • the individual leads 13 and 14 and the common leads 15 of the semiconductor light emitting device A1 are inserted into the through holes 92 of the mounting substrate 90.
  • the terminal portions 132, 142, 152 of the individual leads 13, 14 and the common leads 15 are connected to the land 93 by the solder 95.
  • the terminal portions 132, 142, 152 of the individual leads 13, 14 and the common lead 15 are cut at the positions indicated by the alternate long and short dash lines shown in FIGS. 7 and 8, for example.
  • connection portion 151 of the common lead 15 is housed in the connection recess 24 formed on the back surface 112 of the base 11. Therefore, as shown in FIGS. 8 and 9, only the terminal portions 132 and 142 of the individual leads 13 and 14 and the terminal portion 152 of the common lead 15 project from the back surface 112 of the base 11 in the thickness direction z. Therefore, since the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting substrate 90, the semiconductor light emitting device A1 is supported so as not to be tilted, and a jig or the like for suppressing the tilting of the semiconductor light emitting device A1 is provided.
  • the inclination of the semiconductor light emitting device A1 with respect to the mounting substrate 90 can be suppressed without using a member. Therefore, the semiconductor light emitting device A1 can be easily mounted. Further, since the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting board 90, heat dissipation can be improved.
  • the semiconductor light emitting device A1 can be mounted on the mounting board 90 so that the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting board 90. Therefore, the power supply path to the semiconductor light emitting element 40 is shortened. Therefore, the parasitic inductance, resistance value, etc. in the feeding path can be reduced, so that the semiconductor light emitting element 40 can be switched at high speed.
  • the power supply path is shortened, it is not easily affected by external noise and the like, and malfunctions and the like are suppressed.
  • the base 11 and the heat sink 12 are obtained by preparing an Fe material or an Fe alloy material and cold forging these materials. By this cold forging, the base 11 and the heat sink 12 are integrally formed. Further, the connection recess 24 can be formed at the same time on the back surface 112 of the base 11. Further, through holes 21 and 22 penetrating the base 11 can be formed at the same time. Thereby, the base 11 having the connection recess 24 can be formed without increasing the number of steps.
  • connection portion 151 of the common lead 15 is housed in the connection recess 24 formed on the back surface 112 of the base 11. Therefore, the semiconductor light emitting device A1 can be easily mounted without supporting the semiconductor light emitting device A1 so as not to tilt and requiring a member such as a jig for suppressing the tilt of the semiconductor light emitting device A1. Further, since the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting board 90, heat dissipation can be improved.
  • the semiconductor light emitting device A1 can be mounted on the mounting board 90 so that the back surface 112 of the base 11 is in contact with the mounting surface of the mounting board 90. Therefore, the power supply path to the semiconductor light emitting element 40 is shortened. Therefore, the parasitic inductance, resistance value, etc. in the feeding path can be reduced, so that the semiconductor light emitting element 40 can be switched at high speed. Further, since the power supply path is shortened, it is less likely to be affected by external noise and the like, and malfunction and the like can be suppressed.
  • the semiconductor light emitting device A2 shown in FIG. 10 has a connection recess 24 on the back surface 112 of the base 11.
  • the connection recess 24 has a bottom surface 241 facing in the thickness direction z, and an inner wall surface 242 between the back surface 112 and the bottom surface 241 of the base 11.
  • the inner wall surface 242 is inclined from the bottom surface 241 of the connection recess 24 toward the back surface 112 of the base 11 so that the inner dimension of the connection recess 24 gradually increases.
  • the semiconductor light emitting device A2 also has the same effect as that of the above embodiment.
  • the semiconductor light emitting device A3 shown in FIG. 11 includes a light receiving element 61.
  • the light receiving element 61 is mounted in the recess 23 of the base 11.
  • the light receiving element 61 is, for example, a photodiode.
  • the light receiving element 61 has a pad electrode (not shown) serving as an anode on the upper surface and a back electrode (not shown) serving as a cathode on the back surface.
  • the pad electrode is connected to the individual lead 14 via the wire 51, and the back electrode is connected to the base 11.
  • the light receiving element 61 detects light (leakage light) emitted from a surface of the semiconductor light emitting element 40 facing the base 11.
  • the semiconductor light emitting element 40 can be monitored by the light receiving element 61.
  • the semiconductor light emitting element 70 is connected to the individual leads 13 by the wire 52, and is also connected to the common lead 15 via the wire 53 and the stem 10. More specifically, the first end of the wire 52 is connected to the submount 72 and the second end of the wire 52 is connected to the individual leads 13. The first end of the wire 53 is connected to the laser element 71, and the second end of the wire 53 is connected to the connection surface 122 of the heat sink 12 of the stem 10.
  • the semiconductor light emitting device A5 shown in FIG. 13 includes a stem 10, a semiconductor light emitting element 40, a wire 50, a cap 81, and a cover 82.
  • the cap 81 covers the semiconductor light emitting element 40 and the heat sink 12, and is fixed to the base 11 of the stem 10.
  • the cap 81 is made of, for example, Fe or Fe alloy.
  • the cover 82 is transparent to the light from the semiconductor light emitting device 40.
  • the cover 82 is made of, for example, glass. The cover 82 may be omitted.
  • the cap 81 has a body portion 811 and a top portion 812, and a collar portion 813.
  • the body portion 811 surrounds the semiconductor light emitting element 40 and the heat sink 12 when viewed from the thickness direction z, and is, for example, cylindrical.
  • the top portion 812 is connected to the upper end of the body portion 811 and has a circular shape, for example.
  • the top 812 is formed with an opening 814.
  • the opening 814 is for passing light from the semiconductor light emitting device 40.
  • the opening 814 is, for example, circular.
  • the collar portion 813 is connected to the lower end of the body portion 811.
  • the collar portion 813 extends outward from the body portion.
  • the collar portion 813 has, for example, an annular shape.
  • the flange portion 813 is fixed to the main surface 111 of the base 11 by welding, a joining material, or the like.
  • the cover 82 is attached to the lower surface of the top portion 812 in the drawing, and the cover 82 closes the opening 814.
  • the semiconductor light emitting element 40 can be protected by such a cap 81 and a cover 82.
  • the heat sink 12 may have an arbitrary shape.
  • the heat sink 12 may have a rectangular parallelepiped shape.
  • A1 to A5 Semiconductor light emitting device 10 Stem 11 Base 111 Main surface 112 Back surface 12 Heat sink 121 Support surface 122 Connection surface 13, 14 Individual reed (first reed) 131 Connection part 132 Terminal part 141 Connection part 142 Terminal part 15 Common reed (second reed) 151 Connection part 152 Terminal part 153 Connection surface 16,17 Insulator 18 Metal layer 181 First layer 182 Second layer 21,22 Through hole 23 Recess 24 Connection recess 241 Bottom surface 242 Inner wall surface 243 First wall surface 244 Second wall surface 40 Semiconductor Light emitting element 41 Laser element 42 Submount 50 to 53 Wire 61 Light receiving element 70 Semiconductor light emitting element 71 Laser element 72 Submount 81 Cap 811 Body 812 Top 813 Flange 814 Opening 82 Cover 90 Mounting board 91 Base material 911 Mounting surface 912 Back side 92 Through hole 93 Land H1, H2 Depth

Abstract

Provided is a semiconductor light-emitting device comprising: a semiconductor light-emitting element; a base; a first lead; and a second lead. The base has a principal surface and a rear surface facing in the directions opposite to each other, a through-hole penetrating from the principal surface to the rear surface, and a connection recess part formed in the rear surface. The first lead is inserted into the through-hole to be supported by the base. The second lead is connected to the connection recess part.

Description

半導体発光装置Semiconductor light emitting device
　本開示は、半導体発光装置に関する。 This disclosure relates to a semiconductor light emitting device.
　様々な電子機器に搭載される光源装置として、半導体レーザ装置が広く採用されている。特許文献１は、従来の半導体レーザ装置の一例を開示している。同文献に開示された半導体レーザ装置は、ステム及び半導体レーザチップを備えている。ステムは、金属製であり、板状のベース、半導体レーザチップを支持するブロック、ベースに固定された複数のリードを有する。このような構成により、複数のリードを介して電力が投入されると、半導体レーザチップからのレーザ光が出射方向前方に出射される。 Semiconductor laser devices are widely used as light source devices installed in various electronic devices. Patent Document 1 discloses an example of a conventional semiconductor laser device. The semiconductor laser device disclosed in the document includes a stem and a semiconductor laser chip. The stem is made of metal and has a plate-shaped base, a block that supports the semiconductor laser chip, and a plurality of leads fixed to the base. With such a configuration, when power is applied through the plurality of reeds, the laser beam from the semiconductor laser chip is emitted forward in the emission direction.
特開２０１６－２９７１８号公報Japanese Unexamined Patent Publication No. 2016-29718
　複数のリードのうちの１本のリードは、ベースの出射方向後方の面（後方面）に接合されている。このリードは、端部に接着部を有し、その接着部が銀ロウや溶接によって後方面に接合されている。この接着部は、回路基板への実装時の安定性を低下させる要因となる。例えば、この半導体レーザ装置を実装基板に実装する際、接着部によって半導体レーザ装置が傾いた状態で実装されてしまう虞がある。安定性の向上を図るためには、接着部を考慮した何らかの工夫が必要となり、実装が煩雑なものとなっていた。 One of the plurality of leads is joined to the rear surface (rear surface) of the base in the exit direction. This lead has an adhesive portion at the end, and the adhesive portion is joined to the rear surface by silver wax or welding. This adhesive portion becomes a factor that lowers the stability at the time of mounting on the circuit board. For example, when mounting this semiconductor laser device on a mounting substrate, there is a risk that the semiconductor laser device will be mounted in a tilted state due to the adhesive portion. In order to improve the stability, it is necessary to take some measures in consideration of the bonded portion, which makes the mounting complicated.
　本開示の目的は、実装を容易とした半導体発光装置を提供することにある。 An object of the present disclosure is to provide a semiconductor light emitting device that is easy to mount.
　本開示の一態様による半導体発光装置は、半導体発光素子と、互いに反対側を向く主面及び裏面と、前記主面から前記裏面まで貫通する貫通孔と、前記裏面に形成された接続凹部とを有するベースと、前記貫通孔に挿通されて前記ベースに支持された第１リードと、前記接続凹部に接続された第２リードと、を備えた。 The semiconductor light emitting device according to one aspect of the present disclosure includes a semiconductor light emitting element, a main surface and a back surface facing opposite sides, a through hole penetrating from the main surface to the back surface, and a connection recess formed on the back surface. A base having a base, a first lead inserted through the through hole and supported by the base, and a second lead connected to the connection recess were provided.
　この構成によれば、第２リードの接続部は、ベースの裏面に形成された接続凹部に収容されている。したがって、半導体発光装置が傾かないように支持することや、半導体発光装置の傾きを抑制するための治具等の部材が不要となり、半導体発光装置を容易に実装できる。 According to this configuration, the connecting portion of the second lead is housed in a connecting recess formed on the back surface of the base. Therefore, it is not necessary to support the semiconductor light emitting device so that it does not tilt, and a member such as a jig for suppressing the tilt of the semiconductor light emitting device is unnecessary, and the semiconductor light emitting device can be easily mounted.
　本回路に一態様によれば、安定性向上を可能とした半導体発光装置を提供できる。 According to one aspect of this circuit, it is possible to provide a semiconductor light emitting device capable of improving stability.
一実施形態の半導体発光装置の斜視図。The perspective view of the semiconductor light emitting device of one Embodiment. 一実施形態の半導体発光装置の平面図。Top view of the semiconductor light emitting device of one embodiment. 図２の３－３線断面図。FIG. 2 is a sectional view taken along line 3-3 of FIG. 図２の４－４線断面図。FIG. 2 is a sectional view taken along line 4-4 of FIG. 後方面から見たステムを示す説明図。Explanatory drawing which shows the stem seen from the rear surface. ベース及び個別リードの一部拡大断面図。Partially enlarged cross-sectional view of the base and individual reeds. ベース及び共通リードの一部拡大断面図。Partially enlarged cross-sectional view of the base and common reed. 実装基板及び半導体発光装置を示す断面図。FIG. 5 is a cross-sectional view showing a mounting substrate and a semiconductor light emitting device. 実装基板及び半導体発光装置を示す断面図。FIG. 5 is a cross-sectional view showing a mounting substrate and a semiconductor light emitting device. 変更例の半導体発光装置の断面図。Sectional drawing of the semiconductor light emitting device of the modified example. 変更例の半導体発光装置の斜視図。The perspective view of the semiconductor light emitting device of the modified example. 変更例の半導体発光装置の平面図。Top view of the semiconductor light emitting device of the modified example. 変更例の半導体発光装置の断面図。Sectional drawing of the semiconductor light emitting device of the modified example.
　以下、実施形態及び変形例について図面を参照して説明する。以下に示す実施形態及び変形例は、技術的思想を具体化するための構成や方法を例示するものであって、各構成部品の材質、形状、構造、配置、寸法等を下記のものに限定するものではない。以下の各実施形態及び変形例は、種々の変更を加えることができる。また、以下の実施形態及び変更例は、技術的に矛盾しない範囲で互いに組み合わせて実施することができる。 Hereinafter, embodiments and modifications will be described with reference to the drawings. The embodiments and modifications shown below exemplify configurations and methods for embodying the technical idea, and the materials, shapes, structures, arrangements, dimensions, etc. of each component are limited to the following. It's not something to do. Various changes can be made to each of the following embodiments and modifications. In addition, the following embodiments and modifications can be implemented in combination with each other within a technically consistent range.
　本明細書において、「部材Ａが部材Ｂと接続された状態」とは、部材Ａと部材Ｂとが物理的に直接的に接続される場合、並びに、部材Ａ及び部材Ｂが、電気的な接続状態に影響を及ぼさない他の部材を介して間接的に接続される場合を含む。 In the present specification, the "state in which the member A is connected to the member B" means that the member A and the member B are physically directly connected, and the member A and the member B are electrically connected. This includes the case of being indirectly connected via another member that does not affect the connection state.
　同様に、「部材Ｃが部材Ａと部材Ｂとの間に設けられた状態」とは、部材Ａと部材Ｃ、あるいは部材Ｂと部材Ｃとが直接的に接続される場合、並びに、部材Ａと部材Ｃ、あるいは部材Ｂと部材Ｃとが、電気的な接続状態に影響を及ぼさない他の部材を介して間接的に接続される場合を含む。 Similarly, "a state in which the member C is provided between the member A and the member B" means that the member A and the member C, or the member B and the member C are directly connected, and the member A. This includes the case where the member C and the member C, or the member B and the member C are indirectly connected via another member that does not affect the electrical connection state.
　図１から図５は、本実施形態の半導体発光装置を示している。 1 to 5 show the semiconductor light emitting device of the present embodiment.
　本実施形態の半導体発光装置Ａ１は、ステム１０、半導体発光素子４０、ワイヤ５０を備えている。 The semiconductor light emitting device A1 of the present embodiment includes a stem 10, a semiconductor light emitting element 40, and a wire 50.
　ステム１０は、半導体発光素子４０を支持するものであり、ベース１１、ヒートシンク１２、個別リード１３，１４及び共通リード１５、絶縁材１６，１７を有している。本実施形態のステム１０は、ベース１１及びヒートシンク１２が一体的に形成されている。ステム１０の材質は特に限定されないが、例えば鉄（Ｆｅ）またはＦｅ合金からなる。また、ステム１０が有するリードの本数は特に限定されない。以降の説明においては、２本の個別リード１３，１４と１本の共通リード１５を有する場合を一例として説明する。 The stem 10 supports the semiconductor light emitting element 40, and has a base 11, a heat sink 12, individual leads 13 and 14, common leads 15, and insulating materials 16 and 17. In the stem 10 of this embodiment, the base 11 and the heat sink 12 are integrally formed. The material of the stem 10 is not particularly limited, but is made of, for example, iron (Fe) or an Fe alloy. Further, the number of leads included in the stem 10 is not particularly limited. In the following description, a case where two individual leads 13 and 14 and one common lead 15 are provided will be described as an example.
　ベース１１は、板状の部材である。図１から図５において、ベースの厚さ方向を厚さ方向ｚとする。そして、厚さ方向ｚに対して直角な方向を第１方向ｘとし、厚さ方向ｚ及び第１方向ｘに直角な方向を第２方向ｙとする。本実施形態において、ベース１１は、厚さ方向ｚから視て略円形状である。ベース１１は、厚さ方向ｚにおいて互いに反対側を向く主面１１１及び裏面１１２を有している。ベース１１は、例えばＦｅ、Ｆｅ合金からなる。ベース１１の大きさの一例として、直径は５．６ｍｍ程度、厚さは１．２ｍｍ程度である。 The base 11 is a plate-shaped member. In FIGS. 1 to 5, the thickness direction of the base is defined as the thickness direction z. Then, the direction perpendicular to the thickness direction z is defined as the first direction x, and the direction perpendicular to the thickness direction z and the first direction x is defined as the second direction y. In the present embodiment, the base 11 has a substantially circular shape when viewed from the thickness direction z. The base 11 has a main surface 111 and a back surface 112 facing opposite sides in the thickness direction z. The base 11 is made of, for example, an Fe or Fe alloy. As an example of the size of the base 11, the diameter is about 5.6 mm and the thickness is about 1.2 mm.
　ベース１１には、ベース１１を厚さ方向ｚに貫通する２つの貫通孔２１，２２が形成されている。貫通孔２１，２２は、厚さ方向ｚから視て概略円形状であり、その直径は個別リード１３，１４が挿通される大きさである。貫通孔２１，２２の直径は、１．０ｍｍ程度である。 The base 11 is formed with two through holes 21 and 22 that penetrate the base 11 in the thickness direction z. The through holes 21 and 22 have a substantially circular shape when viewed from the thickness direction z, and the diameter thereof is the size through which the individual leads 13 and 14 are inserted. The diameter of the through holes 21 and 22 is about 1.0 mm.
　貫通孔２１，２２は、個別リード１３，１４をベース１１に固定するために形成されている。図２に示すように、本実施形態の貫通孔２１，２２は、厚さ方向ｚから視て略円形状のベース１１の中心を通る直線上に配置されている。 Through holes 21 and 22 are formed to fix the individual leads 13 and 14 to the base 11. As shown in FIG. 2, the through holes 21 and 22 of the present embodiment are arranged on a straight line passing through the center of a substantially circular base 11 when viewed from the thickness direction z.
　ヒートシンク１２は、ベース１１の主面１１１に設けられている。本実施形態において、ヒートシンク１２は、概略扇型状に形成されるとともに、個別リード１４寄りの部位が第１方向ｘに沿って突出している。ヒートシンク１２は、その中心部に支持面１２１を有している。本実施形態のヒートシンク１２は、突出した部分に接続面１２２を有している。支持面１２１は、半導体発光素子４０を搭載するために設けられ、接続面１２２は、ワイヤの接続のために設けられている。支持面１２１は、厚さ方向ｚ及び第１方向ｘに沿った平面である。ヒートシンク１２は、例えばＦｅ，Ｆｅ合金からなる。本実施形態において、ヒートシンク１２は、ベース１１と一体に形成されている。 The heat sink 12 is provided on the main surface 111 of the base 11. In the present embodiment, the heat sink 12 is formed in a substantially fan shape, and a portion near the individual leads 14 projects along the first direction x. The heat sink 12 has a support surface 121 at its center. The heat sink 12 of the present embodiment has a connecting surface 122 at a protruding portion. The support surface 121 is provided for mounting the semiconductor light emitting element 40, and the connection surface 122 is provided for connecting the wires. The support surface 121 is a plane along the thickness direction z and the first direction x. The heat sink 12 is made of, for example, an Fe, Fe alloy. In this embodiment, the heat sink 12 is integrally formed with the base 11.
　図１，図２及び図３に示すように、ベース１１には凹部２３が形成されている。凹部２３は、主面１１１から厚さ方向ｚに凹んでいる。図３に示すように、凹部２３は、第２方向ｙにおいて、ヒートシンク１２から離れるにつれて深くなるように底面が形成されている。 As shown in FIGS. 1, 2 and 3, a recess 23 is formed in the base 11. The recess 23 is recessed from the main surface 111 in the thickness direction z. As shown in FIG. 3, the bottom surface of the recess 23 is formed so as to become deeper as the distance from the heat sink 12 increases in the second direction y.
　図３に示すように、ベース１１には、ベース１１の裏面１１２から厚さ方向ｚに窪む接続凹部２４が形成されている。図５に示すように、厚さ方向ｚから視て、接続凹部２４は、ヒートシンク１２と重なる位置に形成されていることが好ましい。なお、接続凹部２４の形成位置は、適宜変更できる。接続凹部２４は、共通リード１５の接続に用いられる。接続凹部２４は、厚さ方向ｚに向く底面２４１と、ベース１１の裏面１１２と底面２４１との間の内壁面２４２とを有している。底面２４１は平坦である。内壁面２４２は、ベース１１の裏面１１２と垂直な断面において、ベース１１の裏面１１２から厚さ方向ｚに向かう第１壁面２４３と、第１壁面２４３と底面２４１との間の四半弧状の第２壁面２４４とを有している。 As shown in FIG. 3, the base 11 is formed with a connection recess 24 recessed from the back surface 112 of the base 11 in the thickness direction z. As shown in FIG. 5, it is preferable that the connection recess 24 is formed at a position overlapping the heat sink 12 when viewed from the thickness direction z. The formation position of the connection recess 24 can be changed as appropriate. The connection recess 24 is used to connect the common lead 15. The connection recess 24 has a bottom surface 241 facing in the thickness direction z, and an inner wall surface 242 between the back surface 112 and the bottom surface 241 of the base 11. The bottom surface 241 is flat. The inner wall surface 242 has a cross section perpendicular to the back surface 112 of the base 11, a first wall surface 243 extending from the back surface 112 of the base 11 in the thickness direction z, and a quarter arc-shaped second wall surface 243 between the first wall surface 243 and the bottom surface 241. It has a wall surface 244.
　個別リード１３，１４及び共通リード１５は、半導体発光装置Ａ１を実装基板等に固定するために設けられ、かつ半導体発光素子４０への電力供給経路をなす。個別リード１３，１４及び共通リード１５は、例えばＦｅ－Ｎｉ合金からなる。個別リード１３，１４及び共通リード１５の直径は、０．４５ｍｍ程度の棒状部材である。 The individual leads 13 and 14 and the common lead 15 are provided to fix the semiconductor light emitting device A1 to a mounting substrate or the like, and form a power supply path to the semiconductor light emitting element 40. The individual leads 13 and 14 and the common lead 15 are made of, for example, a Fe—Ni alloy. The diameters of the individual leads 13 and 14 and the common lead 15 are rod-shaped members of about 0.45 mm.
　第１リードとしての個別リード１３，１４は、貫通孔２１，２２にそれぞれ挿通されている。個別リード１３，１４と貫通孔２１，２２との間にはそれぞれ絶縁材１６，１７が充填されている。絶縁材１６，１７は、電気絶縁性を有する材料からなる。この材料は例えばガラスである。絶縁材１６，１７により、個別リード１３，１４は、ベース１１に対して電気絶縁がなされた状態で支持されている。 The individual leads 13 and 14 as the first leads are inserted into the through holes 21 and 22, respectively. Insulating materials 16 and 17 are filled between the individual leads 13 and 14 and the through holes 21 and 22, respectively. The insulating materials 16 and 17 are made of a material having electrical insulating properties. This material is, for example, glass. The individual leads 13 and 14 are supported by the insulating materials 16 and 17 in a state of being electrically insulated from the base 11.
　図４に示すように、個別リード１３は、接続部１３１と端子部１３２とを有している。接続部１３１は、ベース１１の主面１１１から突出した部分であり、端子部１３２はベース１１の裏面１１２から突出した部分である。接続部１３１は、ワイヤ５０を介して半導体発光素子４０と接続される部分である。端子部１３２は、半導体発光装置Ａ１を実装基板に実装する際に用いられる。個別リード１３の長さは９．０ｍｍ程度である。接続部１３１の長さは、１．５ｍｍ程度である。端子部１３２の長さは、６．５ｍｍ程度である。 As shown in FIG. 4, the individual lead 13 has a connection portion 131 and a terminal portion 132. The connecting portion 131 is a portion protruding from the main surface 111 of the base 11, and the terminal portion 132 is a portion protruding from the back surface 112 of the base 11. The connecting portion 131 is a portion connected to the semiconductor light emitting element 40 via the wire 50. The terminal portion 132 is used when the semiconductor light emitting device A1 is mounted on the mounting substrate. The length of the individual lead 13 is about 9.0 mm. The length of the connecting portion 131 is about 1.5 mm. The length of the terminal portion 132 is about 6.5 mm.
　個別リード１４は、接続部１４１と端子部１４２とを有している。接続部１４１は、ベース１１の主面１１１から突出した部分であり、端子部１４２は、ベース１１の裏面１１２から突出した部分である。個別リード１４の接続部１４１の長さは、個別リード１３の接続部１３１の長さよりも小である。接続部１４１は、例えば受光素子を搭載した場合にワイヤを介して受光素子と接続される部分である。端子部１４２は、半導体発光装置Ａ１を実装基板に実装する際に用いられる。個別リード１４の長さは、８．０ｍｍ程度である。接続部１４１の長さは、０～０．２ｍｍ程度である。端子部１４２の長さは、６．５ｍｍ程度である。 The individual lead 14 has a connection portion 141 and a terminal portion 142. The connecting portion 141 is a portion protruding from the main surface 111 of the base 11, and the terminal portion 142 is a portion protruding from the back surface 112 of the base 11. The length of the connecting portion 141 of the individual leads 14 is smaller than the length of the connecting portion 131 of the individual leads 13. The connection portion 141 is a portion that is connected to the light receiving element via a wire, for example, when the light receiving element is mounted. The terminal portion 142 is used when the semiconductor light emitting device A1 is mounted on the mounting substrate. The length of the individual lead 14 is about 8.0 mm. The length of the connecting portion 141 is about 0 to 0.2 mm. The length of the terminal portion 142 is about 6.5 mm.
　図３に示すように、第２リードとしての共通リード１５は、ベース１１に接続されている。 As shown in FIG. 3, the common lead 15 as the second lead is connected to the base 11.
　共通リード１５は、接続部１５１と端子部１５２とを有している。接続部１５１は、端子部１５２の一端に設けられている。端子部１５２は、個別リード１３，１４と同様の太さである。接続部１５１は、端子部１５２よりも拡径された形状、つまり接続部１５１は端子部１５２よりも太くなっている。その接続部１５１の端面は接続面１５３である。 The common lead 15 has a connection portion 151 and a terminal portion 152. The connection portion 151 is provided at one end of the terminal portion 152. The terminal portion 152 has the same thickness as the individual leads 13 and 14. The connection portion 151 has a shape with a larger diameter than the terminal portion 152, that is, the connection portion 151 is thicker than the terminal portion 152. The end face of the connecting portion 151 is a connecting surface 153.
　共通リード１５は、接続部１５１の接続面１５３をベース１１の接続凹部２４の底面２４１と対向して配置される。そして、接続面１５３と底面２４１とが接合される。したがって、図５に示すように、共通リード１５は、厚さ方向ｚから視て、ヒートシンク１２と重なる位置に接続されている。接続面１５３と底面２４１との間の接合方法は、例えば銀ロウ付け、抵抗溶接、等が用いられる。 The common lead 15 is arranged so that the connection surface 153 of the connection portion 151 faces the bottom surface 241 of the connection recess 24 of the base 11. Then, the connection surface 153 and the bottom surface 241 are joined. Therefore, as shown in FIG. 5, the common lead 15 is connected at a position overlapping the heat sink 12 when viewed from the thickness direction z. As a joining method between the connecting surface 153 and the bottom surface 241, for example, silver brazing, resistance welding, or the like is used.
　接続凹部２４は、共通リード１５の接続部１５１に応じた大きさに設定されている。接続凹部２４の底面２４１の面積は、接続部１５１の接続面１５３の面積よりも大きく設定されている。接続凹部２４の深さＨ１、つまりベース１１の裏面１１２から底面２４１までの距離は、接続部１５１の長さＨ２以上に設定されることが好ましい。接続部１５１の長さＨ２は、共通リード１５の延びる方向（図３の厚さ方向ｚ）における接続部１５１の長さである。従って、接続部１５１は、接続凹部２４に収容され、ベース１１の裏面１１２から厚さ方向ｚに突出しない。共通リード１５の長さ（全長）は６．８ｍｍ程度である。接続部１５１の長さＨ２は、０．２ｍｍ程度である。 The connection recess 24 is set to a size corresponding to the connection portion 151 of the common lead 15. The area of the bottom surface 241 of the connection recess 24 is set to be larger than the area of the connection surface 153 of the connection portion 151. The depth H1 of the connection recess 24, that is, the distance from the back surface 112 of the base 11 to the bottom surface 241 is preferably set to the length H2 or more of the connection portion 151. The length H2 of the connecting portion 151 is the length of the connecting portion 151 in the extending direction of the common lead 15 (thickness direction z in FIG. 3). Therefore, the connecting portion 151 is housed in the connecting recess 24 and does not protrude from the back surface 112 of the base 11 in the thickness direction z. The length (total length) of the common lead 15 is about 6.8 mm. The length H2 of the connecting portion 151 is about 0.2 mm.
　半導体発光素子４０は、例えば半導体レーザチップである。本実施形態の半導体発光素子４０は、レーザ素子４１とサブマウント４２を有する。サブマウント４２は、ヒートシンク１２の支持面１２１に接続されている。これにより、半導体発光素子４０は、ヒートシンク１２の支持面１２１に搭載されている。 The semiconductor light emitting element 40 is, for example, a semiconductor laser chip. The semiconductor light emitting device 40 of this embodiment has a laser element 41 and a submount 42. The submount 42 is connected to the support surface 121 of the heat sink 12. As a result, the semiconductor light emitting element 40 is mounted on the support surface 121 of the heat sink 12.
　サブマウント４２は、レーザ素子４１の支持体かつ放熱体である。 The submount 42 is a support and a radiator of the laser element 41.
　サブマウント４２は、例えばシリコン（Ｓｉ）又は窒化アルミニウム（ＡｌＮ）からなる。サブマウント４２には、半導体発光素子４０とヒートシンク１２とを導通させるための配線パターンやスルーホール電極等の導通経路（図史略）が形成されている。なお、半導体発光素子４０が直接ヒートシンク１２に搭載される構成としてもよい。 The submount 42 is made of, for example, silicon (Si) or aluminum nitride (AlN). The submount 42 is formed with a wiring pattern for conducting the semiconductor light emitting element 40 and the heat sink 12 and a conduction path (not shown) such as a through-hole electrode. The semiconductor light emitting element 40 may be mounted directly on the heat sink 12.
　図１に示すように、半導体発光素子４０は、ワイヤ５０により個別リード１３と接続されている。より具体的には、半導体発光素子４０はカソードとなるパッド電極（図示略）を有し、そのパッド電極にワイヤ５０の第１端が接続され、ワイヤ５０の第２端が個別リード１３に接続されている。ワイヤ５０は、例えば金（Ａｕ）からなる。半導体発光素子４０は、パッド電極が形成された面と反対側の面にアノードとなる裏面電極（図示略）を有し、その裏面電極はサブマウント４２に接続されている。これにより、半導体発光素子４０は、ヒートシンク１２、及びベース１１を介して共通リード１５と導通している。このような構成によって、半導体発光装置においては、個別リード１３，１４及び共通リード１５によって、半導体発光素子４０への電極供給経路が形成されている。 As shown in FIG. 1, the semiconductor light emitting element 40 is connected to the individual leads 13 by a wire 50. More specifically, the semiconductor light emitting device 40 has a pad electrode (not shown) serving as a cathode, the first end of the wire 50 is connected to the pad electrode, and the second end of the wire 50 is connected to the individual lead 13. Has been done. The wire 50 is made of, for example, gold (Au). The semiconductor light emitting device 40 has a back surface electrode (not shown) serving as an anode on a surface opposite to the surface on which the pad electrode is formed, and the back surface electrode is connected to the submount 42. As a result, the semiconductor light emitting element 40 is electrically connected to the common lead 15 via the heat sink 12 and the base 11. With such a configuration, in the semiconductor light emitting device, the electrode supply path to the semiconductor light emitting element 40 is formed by the individual leads 13 and 14 and the common lead 15.
　図６及び図７に示すように、ベース１１は、本体部１１ａと、本体部１１ａの表面を覆う金属層１１ｂとを含む。なお、図示しないが、図１等に示すヒートシンク１２も同様に本体部と金属層とを含む。つまり、本実施形態のステム１０は、本体部と、本体部の表面を覆う金属層とを含む。本体部１１ａは、例えばＦｅまたはＦｅ合金からなる。金属層１１ｂは、たとえばＮｉからなるめっき層が挙げられる。 As shown in FIGS. 6 and 7, the base 11 includes a main body portion 11a and a metal layer 11b that covers the surface of the main body portion 11a. Although not shown, the heat sink 12 shown in FIG. 1 and the like also includes a main body and a metal layer. That is, the stem 10 of the present embodiment includes a main body portion and a metal layer covering the surface of the main body portion. The main body 11a is made of, for example, Fe or Fe alloy. Examples of the metal layer 11b include a plating layer made of Ni.
　図６及び図７に示すように、ベース１１、個別リード１４、及び共通リード１５は、金属層１８により覆われている。なお、図１等に示す個別リード１３は、個別リード１４と同様に金属層１８により覆われているため、図面及び説明を省略する。 As shown in FIGS. 6 and 7, the base 11, the individual leads 14, and the common leads 15 are covered with the metal layer 18. Since the individual leads 13 shown in FIG. 1 and the like are covered with the metal layer 18 like the individual leads 14, the drawings and the description thereof will be omitted.
　金属層１８は、第１層１８１及び第２層１８２を含む。第１層１８１は、ベース１１、個別リード１４、及び共通リード１５を覆っている。第２層１８２は、第１層１８１の表面を覆っている。第１層１８１は、ベース１１、個別リード１４、及び共通リード１５に接している。第２層１８２は、第１層１８１に接している。 The metal layer 18 includes a first layer 181 and a second layer 182. The first layer 181 covers the base 11, the individual leads 14, and the common leads 15. The second layer 182 covers the surface of the first layer 181. The first layer 181 is in contact with the base 11, the individual leads 14, and the common leads 15. The second layer 182 is in contact with the first layer 181.
　第１層１８１の一例としては、たとえばＮｉからなるめっき層が挙げられる。第２層１８２の一例としては、たとえばＡｕからなるめっき層が挙げられる。本実施形態においては、第１層１８１の厚さは、たとえば、２．０μｍ～５．０μｍ程度である。第２層１８２の厚さは、たとえば、０．０５μｍ～１．０μｍ程度である。 An example of the first layer 181 is a plating layer made of Ni, for example. An example of the second layer 182 is a plating layer made of Au, for example. In the present embodiment, the thickness of the first layer 181 is, for example, about 2.0 μm to 5.0 μm. The thickness of the second layer 182 is, for example, about 0.05 μm to 1.0 μm.
　図６に示すように、図示された例においては、金属層１８は、ステム１０のベース１１と絶縁材１７との間を避けた領域に形成されている。すなわち、金属層１８は、ベース１１の主面１１１、主面１１１とは反対側を向く裏面１１２、周端面、及び接続凹部２４の内面に形成されており、貫通孔２２には形成されていない。また、金属層１８は、個別リード１４と絶縁材１７との間を避けた領域に形成されている。すなわち、金属層１８は、個別リード１４のうち、絶縁材１７から露出した部分に形成されている。 As shown in FIG. 6, in the illustrated example, the metal layer 18 is formed in a region avoiding between the base 11 of the stem 10 and the insulating material 17. That is, the metal layer 18 is formed on the main surface 111 of the base 11, the back surface 112 facing the opposite side of the main surface 111, the peripheral end surface, and the inner surface of the connection recess 24, and is not formed in the through hole 22. .. Further, the metal layer 18 is formed in a region avoiding between the individual leads 14 and the insulating material 17. That is, the metal layer 18 is formed in a portion of the individual leads 14 exposed from the insulating material 17.
　図７に示すように、図示された例においては、金属層１８は、共通リード１５とベース１１との間を避けた領域に形成されている。すなわち、金属層１８は、共通リード１５のうちベース１１の接続凹部２４の底面２４１に接合された領域を除く領域に形成されている。 As shown in FIG. 7, in the illustrated example, the metal layer 18 is formed in a region avoiding between the common lead 15 and the base 11. That is, the metal layer 18 is formed in a region of the common lead 15 excluding the region joined to the bottom surface 241 of the connection recess 24 of the base 11.
　第１層１８１及び第２層１８２は、たとえばバレルめっきにより形成される。本実施形態の半導体発光装置Ａ１の製造においては、たとえば、ベース１１に個別リード１３，１４及び共通リード１５を取り付けた後に、たとえばバレルめっきによって第１層１８１及び第２層１８２の順で形成する。 The first layer 181 and the second layer 182 are formed by, for example, barrel plating. In the manufacture of the semiconductor light emitting device A1 of the present embodiment, for example, the individual leads 13 and 14 and the common lead 15 are attached to the base 11, and then the first layer 181 and the second layer 182 are formed in this order by, for example, barrel plating. ..
　（作用）
　図８及び図９に示すように、半導体発光装置Ａ１は、実装基板９０に実装される。実装基板９０は、貫通孔９２を有する基材９１と、基材９１の裏面９１２のランド９３とを有している。半導体発光装置Ａ１の個別リード１３，１４及び共通リード１５は、実装基板９０の貫通孔９２に挿入される。そして、個別リード１３，１４及び共通リード１５の端子部１３２，１４２，１５２は、はんだ９５によりランド９３に接続される。個別リード１３，１４及び共通リード１５の端子部１３２，１４２，１５２は、例えば、図７及び図８に示す一点鎖線にて示す位置にて切断される。 (Action)
As shown in FIGS. 8 and 9, the semiconductor light emitting device A1 is mounted on the mounting substrate 90. The mounting substrate 90 has a base material 91 having a through hole 92 and a land 93 on the back surface 912 of the base material 91. The individual leads 13 and 14 and the common leads 15 of the semiconductor light emitting device A1 are inserted into the through holes 92 of the mounting substrate 90. Then, the terminal portions 132, 142, 152 of the individual leads 13, 14 and the common leads 15 are connected to the land 93 by the solder 95. The terminal portions 132, 142, 152 of the individual leads 13, 14 and the common lead 15 are cut at the positions indicated by the alternate long and short dash lines shown in FIGS. 7 and 8, for example.
　図８に示すように、本実施形態の半導体発光装置Ａ１において、共通リード１５の接続部１５１は、ベース１１の裏面１１２に形成された接続凹部２４に収容されている。したがって、図８及び図９に示すように、ベース１１の裏面１１２からは、個別リード１３，１４の端子部１３２，１４２と共通リード１５の端子部１５２のみが厚さ方向ｚに突出する。このため、ベース１１の裏面１１２は、実装基板９０の実装面９１１に接するため、半導体発光装置Ａ１が傾かないように支持することや、半導体発光装置Ａ１の傾きを抑制するための治具等の部材を用いることなく、実装基板９０に対する半導体発光装置Ａ１の傾きを抑制できる。このため、半導体発光装置Ａ１を容易に実装できる。また、ベース１１の裏面１１２が実装基板９０の実装面９１１に接するため、放熱性を向上できる。 As shown in FIG. 8, in the semiconductor light emitting device A1 of the present embodiment, the connection portion 151 of the common lead 15 is housed in the connection recess 24 formed on the back surface 112 of the base 11. Therefore, as shown in FIGS. 8 and 9, only the terminal portions 132 and 142 of the individual leads 13 and 14 and the terminal portion 152 of the common lead 15 project from the back surface 112 of the base 11 in the thickness direction z. Therefore, since the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting substrate 90, the semiconductor light emitting device A1 is supported so as not to be tilted, and a jig or the like for suppressing the tilting of the semiconductor light emitting device A1 is provided. The inclination of the semiconductor light emitting device A1 with respect to the mounting substrate 90 can be suppressed without using a member. Therefore, the semiconductor light emitting device A1 can be easily mounted. Further, since the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting board 90, heat dissipation can be improved.
　例えば、ベース１１の裏面１１２から共通リード１５の接続部１５１が突出する半導体発光装置では、その接続部１５１が実装基板９０と干渉しないように、実装基板９０の実装面９１１からベース１１の裏面１１２が離れる。これに対し、半導体発光装置Ａ１は、ベース１１の裏面１１２が実装基板９０の実装面９１１に接するように、その実装基板９０に実装できる。このため、半導体発光素子４０までの給電経路が短くなる。このため、給電経路における寄生インダクタンス、抵抗値、等を低減できるため、半導体発光素子４０の高速なスイッチングが可能となる。また、給電経路が短くなるため、外来ノイズ等の影響を受け難く、誤作動等が抑制される。 For example, in a semiconductor light emitting device in which the connecting portion 151 of the common lead 15 projects from the back surface 112 of the base 11, the mounting surface 911 of the mounting board 90 to the back surface 112 of the base 11 so that the connecting portion 151 does not interfere with the mounting board 90. Leaves. On the other hand, the semiconductor light emitting device A1 can be mounted on the mounting board 90 so that the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting board 90. Therefore, the power supply path to the semiconductor light emitting element 40 is shortened. Therefore, the parasitic inductance, resistance value, etc. in the feeding path can be reduced, so that the semiconductor light emitting element 40 can be switched at high speed. In addition, since the power supply path is shortened, it is not easily affected by external noise and the like, and malfunctions and the like are suppressed.
　ベース１１及びヒートシンク１２は、Ｆｅ材料又はＦｅ合金材料を準備し、これらの材料に冷間鍛造を施すことにより得られる。この冷間鍛造により、ベース１１とヒートシンク１２とが一体的に成形される。また、ベース１１の裏面１１２に接続凹部２４を同時に形成できる。さらに、ベース１１を貫通する貫通孔２１，２２を同時に形成できる。これにより、工程を増やすことなく、接続凹部２４を有するベース１１を形成できる。 The base 11 and the heat sink 12 are obtained by preparing an Fe material or an Fe alloy material and cold forging these materials. By this cold forging, the base 11 and the heat sink 12 are integrally formed. Further, the connection recess 24 can be formed at the same time on the back surface 112 of the base 11. Further, through holes 21 and 22 penetrating the base 11 can be formed at the same time. Thereby, the base 11 having the connection recess 24 can be formed without increasing the number of steps.
　以上記述したように、本実施形態によれば、以下の効果を奏する。 As described above, according to this embodiment, the following effects are obtained.
　（１）本実施形態の半導体発光装置Ａ１において、共通リード１５の接続部１５１は、ベース１１の裏面１１２に形成された接続凹部２４に収容されている。したがって、半導体発光装置Ａ１が傾かないように支持することや、半導体発光装置Ａ１の傾きを抑制するための治具等の部材が不要となり、半導体発光装置Ａ１を容易に実装できる。また、ベース１１の裏面１１２が実装基板９０の実装面９１１に接するため、放熱性を向上できる。 (1) In the semiconductor light emitting device A1 of the present embodiment, the connection portion 151 of the common lead 15 is housed in the connection recess 24 formed on the back surface 112 of the base 11. Therefore, the semiconductor light emitting device A1 can be easily mounted without supporting the semiconductor light emitting device A1 so as not to tilt and requiring a member such as a jig for suppressing the tilt of the semiconductor light emitting device A1. Further, since the back surface 112 of the base 11 is in contact with the mounting surface 911 of the mounting board 90, heat dissipation can be improved.
　（２）半導体発光装置Ａ１は、ベース１１の裏面１１２が実装基板９０の実装面に接するように、その実装基板９０に実装できる。このため、半導体発光素子４０までの給電経路が短くなる。このため、給電経路における寄生インダクタンス、抵抗値、等を低減できるため、半導体発光素子４０の高速なスイッチングが可能となる。また、給電経路が短くなるため、外来ノイズ等の影響を受け難くなり、誤作動等を抑制できる。 (2) The semiconductor light emitting device A1 can be mounted on the mounting board 90 so that the back surface 112 of the base 11 is in contact with the mounting surface of the mounting board 90. Therefore, the power supply path to the semiconductor light emitting element 40 is shortened. Therefore, the parasitic inductance, resistance value, etc. in the feeding path can be reduced, so that the semiconductor light emitting element 40 can be switched at high speed. Further, since the power supply path is shortened, it is less likely to be affected by external noise and the like, and malfunction and the like can be suppressed.
　（変更例）
　本実施形態は、以下のように変更して実施することができる。 (Change example)
This embodiment can be modified and implemented as follows.
　・図１０に示す半導体発光装置Ａ２は、ベース１１の裏面１１２に接続凹部２４を有している。接続凹部２４は、厚さ方向ｚを向く底面２４１と、ベース１１の裏面１１２と底面２４１との間の内壁面２４２とを有している。内壁面２４２は、接続凹部２４の底面２４１からベース１１の裏面１１２に向かって接続凹部２４の内側寸法が徐々に大きくなるように傾斜している。この半導体発光装置Ａ２についても、上記実施形態と同様の効果を奏する。 The semiconductor light emitting device A2 shown in FIG. 10 has a connection recess 24 on the back surface 112 of the base 11. The connection recess 24 has a bottom surface 241 facing in the thickness direction z, and an inner wall surface 242 between the back surface 112 and the bottom surface 241 of the base 11. The inner wall surface 242 is inclined from the bottom surface 241 of the connection recess 24 toward the back surface 112 of the base 11 so that the inner dimension of the connection recess 24 gradually increases. The semiconductor light emitting device A2 also has the same effect as that of the above embodiment.
　・図１１に示す半導体発光装置Ａ３は、受光素子６１を備えている。受光素子６１は、ベース１１の凹部２３に搭載されている。この受光素子６１は、例えばフォトダイオードである。この受光素子６１は上面にアノードとなるパッド電極（図示略）を有し、裏面にカソードとなる裏面電極（図示略）を有している。パッド電極はワイヤ５１を介して個別リード１４に接続され、裏面電極はベース１１に接続される。受光素子６１は、半導体発光素子４０のベース１１と対向する面から出射される光（漏出光）を検出する。この受光素子６１により、半導体発光素子４０をモニタできる。 The semiconductor light emitting device A3 shown in FIG. 11 includes a light receiving element 61. The light receiving element 61 is mounted in the recess 23 of the base 11. The light receiving element 61 is, for example, a photodiode. The light receiving element 61 has a pad electrode (not shown) serving as an anode on the upper surface and a back electrode (not shown) serving as a cathode on the back surface. The pad electrode is connected to the individual lead 14 via the wire 51, and the back electrode is connected to the base 11. The light receiving element 61 detects light (leakage light) emitted from a surface of the semiconductor light emitting element 40 facing the base 11. The semiconductor light emitting element 40 can be monitored by the light receiving element 61.
　・図１２に示す半導体発光装置Ａ４において、半導体発光素子７０は、ワイヤ５２により個別リード１３と接続されるとともに、ワイヤ５３とステム１０とを介して共通リード１５と接続される。詳述すると、ワイヤ５２の第１端はサブマウント７２に接続され、ワイヤ５２の第２端は個別リード１３に接続される。ワイヤ５３の第１端はレーザ素子７１に接続され、ワイヤ５３の第２端はステム１０のヒートシンク１２の接続面１２２に接続される。 In the semiconductor light emitting device A4 shown in FIG. 12, the semiconductor light emitting element 70 is connected to the individual leads 13 by the wire 52, and is also connected to the common lead 15 via the wire 53 and the stem 10. More specifically, the first end of the wire 52 is connected to the submount 72 and the second end of the wire 52 is connected to the individual leads 13. The first end of the wire 53 is connected to the laser element 71, and the second end of the wire 53 is connected to the connection surface 122 of the heat sink 12 of the stem 10.
　・図１３に示す半導体発光装置Ａ５は、ステム１０、半導体発光素子４０、ワイヤ５０、キャップ８１、及びカバー８２を備えている。キャップ８１は、半導体発光素子４０及びヒートシンク１２を覆っており、ステム１０のベース１１に固定されている。キャップ８１は、例えばＦｅ又はＦｅ合金からなる。カバー８２は、半導体発光素子４０からの光に対して透過性を有する。カバー８２は、例えばガラスからなる。なお、カバー８２は省略されてもよい。 The semiconductor light emitting device A5 shown in FIG. 13 includes a stem 10, a semiconductor light emitting element 40, a wire 50, a cap 81, and a cover 82. The cap 81 covers the semiconductor light emitting element 40 and the heat sink 12, and is fixed to the base 11 of the stem 10. The cap 81 is made of, for example, Fe or Fe alloy. The cover 82 is transparent to the light from the semiconductor light emitting device 40. The cover 82 is made of, for example, glass. The cover 82 may be omitted.
　キャップ８１は、胴部８１１、天部８１２、及び鍔部８１３を有する。胴部８１１は厚さ方向ｚから視て半導体発光素子４０及びヒートシンク１２を囲んでおり、例えば円筒状である。天部８１２は、胴部８１１の上端に繋がっており、例えば円形状である。天部８１２は、開口８１４が形成されている。開口８１４は、半導体発光素子４０からの光を通過させるためのものである。開口８１４は、例えば円形状である。鍔部８１３は、胴部８１１の下端に繋がっている。鍔部８１３は、胴部から外側に向かって延出している。鍔部８１３は、例えば円環形状である。鍔部８１３は、ベース１１の主面１１１に、溶接又は接合材等によって固定されている。カバー８２は、天部８１２の図中下面に取付けられ、カバー８２は開口８１４を塞いでいる。このようなキャップ８１及びカバー８２によって、半導体発光素子４０を保護できる。 The cap 81 has a body portion 811 and a top portion 812, and a collar portion 813. The body portion 811 surrounds the semiconductor light emitting element 40 and the heat sink 12 when viewed from the thickness direction z, and is, for example, cylindrical. The top portion 812 is connected to the upper end of the body portion 811 and has a circular shape, for example. The top 812 is formed with an opening 814. The opening 814 is for passing light from the semiconductor light emitting device 40. The opening 814 is, for example, circular. The collar portion 813 is connected to the lower end of the body portion 811. The collar portion 813 extends outward from the body portion. The collar portion 813 has, for example, an annular shape. The flange portion 813 is fixed to the main surface 111 of the base 11 by welding, a joining material, or the like. The cover 82 is attached to the lower surface of the top portion 812 in the drawing, and the cover 82 closes the opening 814. The semiconductor light emitting element 40 can be protected by such a cap 81 and a cover 82.
　・上記実施形態及び変更例において、ヒートシンク１２を任意の形状としてもよい。例えば、ヒートシンク１２を直方体状とすることもできる。 -In the above embodiment and modified examples, the heat sink 12 may have an arbitrary shape. For example, the heat sink 12 may have a rectangular parallelepiped shape.
　Ａ１～Ａ５　半導体発光装置
　１０　ステム
　１１　ベース
　１１１　主面
　１１２　裏面
　１２　ヒートシンク
　１２１　支持面
　１２２　接続面
　１３，１４　個別リード（第１リード）
　１３１　接続部
　１３２　端子部
　１４１　接続部
　１４２　端子部
　１５　共通リード（第２リード）
　１５１　接続部
　１５２　端子部
　１５３　接続面
　１６，１７　絶縁材
　１８　金属層
　１８１　第１層
　１８２　第２層
　２１，２２　貫通孔
　２３　凹部
　２４　接続凹部
　２４１　底面
　２４２　内壁面
　２４３　第１壁面
　２４４　第２壁面
　４０　半導体発光素子
　４１　レーザ素子
　４２　サブマウント
　５０～５３　ワイヤ
　６１　受光素子
　７０　半導体発光素子
　７１　レーザ素子
　７２　サブマウント
　８１　キャップ
　８１１　胴部
　８１２　天部
　８１３　鍔部
　８１４　開口
　８２　カバー
　９０　実装基板
　９１　基材
　９１１　実装面
　９１２　裏面
　９２　貫通孔
　９３　ランド
　Ｈ１，Ｈ２　深さ A1 to A5 Semiconductor light emitting device 10 Stem 11 Base 111 Main surface 112 Back surface 12 Heat sink 121 Support surface 122 Connection surface 13, 14 Individual reed (first reed)
131 Connection part 132 Terminal part 141 Connection part 142 Terminal part 15 Common reed (second reed)
151 Connection part 152 Terminal part 153 Connection surface 16,17 Insulator 18 Metal layer 181 First layer 182 Second layer 21,22 Through hole 23 Recess 24 Connection recess 241 Bottom surface 242 Inner wall surface 243 First wall surface 244 Second wall surface 40 Semiconductor Light emitting element 41 Laser element 42 Submount 50 to 53 Wire 61 Light receiving element 70 Semiconductor light emitting element 71 Laser element 72 Submount 81 Cap 811 Body 812 Top 813 Flange 814 Opening 82 Cover 90 Mounting board 91 Base material 911 Mounting surface 912 Back side 92 Through hole 93 Land H1, H2 Depth

Claims (8)

  1. 　半導体発光素子と、
    　互いに反対側を向く主面及び裏面と、前記主面から前記裏面まで貫通する貫通孔と、前記裏面に形成された接続凹部とを有するベースと、
    　前記貫通孔に挿通されて前記ベースに支持された第１リードと、
    　前記接続凹部に接続された第２リードと、
    　を備えた半導体発光装置。     Semiconductor light emitting element and
    A base having a main surface and a back surface facing opposite sides, a through hole penetrating from the main surface to the back surface, and a connection recess formed on the back surface.
    A first reed inserted through the through hole and supported by the base,
    The second reed connected to the connection recess and
    A semiconductor light emitting device equipped with.
  2. 　前記第２リードは、前記第１リードと同じ太さの端子部と、前記端子部より太い接続部と、を有し、
    　前記接続部は、前記接続凹部の底面に接続されている、
    　請求項１に記載の半導体発光装置。     The second lead has a terminal portion having the same thickness as the first lead and a connection portion thicker than the terminal portion.
    The connection portion is connected to the bottom surface of the connection recess.
    The semiconductor light emitting device according to claim 1.
  3. 　前記底面は平坦である、請求項２に記載の半導体発光装置。 The semiconductor light emitting device according to claim 2, wherein the bottom surface is flat.
  4. 　前記接続部は前記底面と対向する接続面を有し、
    　前記底面は前記接続面よりも広い、
    　請求項２又は請求項３に記載の半導体発光装置。     The connection portion has a connection surface facing the bottom surface and has a connection surface facing the bottom surface.
    The bottom surface is wider than the connection surface,
    The semiconductor light emitting device according to claim 2 or 3.
  5. 　前記接続凹部の深さは、前記接続部の厚さ以上である、
    　請求項２から請求項４のいずれか一項に記載の半導体発光装置。     The depth of the connection recess is equal to or greater than the thickness of the connection portion.
    The semiconductor light emitting device according to any one of claims 2 to 4.
  6. 　前記接続凹部は、前記底面と前記裏面との間の内壁面を有し、
    　前記内壁面は、前記ベースの内部に向かって窪む弧状の面を有する、
    　請求項１から請求項５のいずれか一項に記載の半導体発光装置。     The connection recess has an inner wall surface between the bottom surface and the back surface.
    The inner wall surface has an arcuate surface that is recessed toward the inside of the base.
    The semiconductor light emitting device according to any one of claims 1 to 5.
  7. 　前記主面に設けられ、前記半導体発光素子を支持するヒートシンクを備えた、
    　請求項１から請求項６のいずれか一項に記載の半導体発光装置。     A heat sink provided on the main surface and supporting the semiconductor light emitting device is provided.
    The semiconductor light emitting device according to any one of claims 1 to 6.
  8. 　前記接続凹部は、前記主面と垂直な方向から視て前記ヒートシンクと重なる位置に形成されている、
    　請求項７に記載の半導体発光装置。     The connection recess is formed at a position overlapping the heat sink when viewed from a direction perpendicular to the main surface.
    The semiconductor light emitting device according to claim 7.
PCT/JP2020/031365 2019-09-25 2020-08-20 Semiconductor light-emitting device WO2021059805A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210265812A1 (en) * 2018-09-26 2021-08-26 Rohm Co., Ltd. Semiconductor laser device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63185247U (en) * 1987-05-22 1988-11-29
JP2001189515A (en) * 1999-12-28 2001-07-10 Oki Electric Ind Co Ltd Optical transmission module
JP2011119634A (en) * 2009-10-28 2011-06-16 Kyocera Corp Package for electronic component mounting, and electronic device using the same
WO2012060106A1 (en) * 2010-11-04 2012-05-10 パナソニック株式会社 Bulb-type lamp and illuminating device
JP2019129302A (en) * 2018-01-26 2019-08-01 ローム株式会社 Semiconductor laser device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63185247U (en) * 1987-05-22 1988-11-29
JP2001189515A (en) * 1999-12-28 2001-07-10 Oki Electric Ind Co Ltd Optical transmission module
JP2011119634A (en) * 2009-10-28 2011-06-16 Kyocera Corp Package for electronic component mounting, and electronic device using the same
WO2012060106A1 (en) * 2010-11-04 2012-05-10 パナソニック株式会社 Bulb-type lamp and illuminating device
JP2019129302A (en) * 2018-01-26 2019-08-01 ローム株式会社 Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210265812A1 (en) * 2018-09-26 2021-08-26 Rohm Co., Ltd. Semiconductor laser device

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