JP2002043388A - Semiconductor manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the thermal effect of a diffusion CVD system on wafers by suppressing the size increase of the CVD system. SOLUTION: A first temporary placing stage 5 on which treated board 21A is temporarily placed, and a second temporary placing stage 6 on which an empty boat 21B is temporarily placed, are set up at positions from a heat treatment stage 4 set up on the axial line of a process tube. Boat transferring equipment 30 which transfers the boards 21A and 21B is provided among the stages 4, 5, and 6. Since the high-temperature treated boat 21A carried out of a treatment chamber is transferred to the first temporary placing stage 5 and retreated, the thermal effect of the boat 21A on the new wafers transferred to the empty boat 21B is prevented. Since the radius of gyration of the arm of the boat transferring equipment 30 can be reduced by executing the replacement and transfer of old and new boats among the stages 4, 5, and 6, the size increase of the diffused CVD system can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and, more particularly, to a technique for preventing oxidation and contamination of a substrate to be processed. For example, an annealing process or an oxide film formation on a semiconductor wafer in a semiconductor device manufacturing process. The present invention relates to a method effective for performing heat treatment such as treatment, diffusion treatment, and film formation treatment.

[0002]

2. Description of the Related Art Generally, a batch type vertical hot wall type is used for performing a heat treatment such as an annealing process, an oxide film forming process, a diffusion process and a film forming process on a semiconductor wafer (hereinafter, referred to as a wafer) in a semiconductor device manufacturing process. Heat treatment equipment
(furnace; hereinafter, referred to as a heat treatment apparatus) is widely used.

A conventional heat treatment apparatus of this type is disclosed in Japanese Patent Application Laid-Open No. 63-24615.
This heat treatment apparatus includes a first boat and a second boat, and while a wafer on the first boat is being heat-treated in the processing chamber of the process tube, a new wafer is transferred to the second boat. When the first boat is unloaded from the processing chamber of the process tube after the heat treatment is completed, the unloading of the first boat and the second boat already holding a new wafer are performed. It is configured so that the positions can be switched by 180 degrees.

[0004]

However, in the above-described heat treatment apparatus, the first boat and the wafer group that are being heated and heated to a high temperature (for example, 1000 ° C.) in the processing chamber of the process tube are unloaded. The problem is that the new wafers in the second boat are thermally affected by the first boat and the wafers that have become hot because the new wafers in the second boat are in close proximity to the new wafers. There is.

Therefore, in order to avoid the thermal effect of the new wafer held in the second boat from the first boat,
If the distance between the first boat and the second boat is set to be large, the radius of rotation when the first boat and the second boat are exchanged by 180 degrees becomes large, so that the heat treatment apparatus becomes synergistically large. .

An object of the present invention is to provide a semiconductor manufacturing apparatus capable of preventing the influence of heat while suppressing an increase in the size of the apparatus.

[0007]

According to the present invention, there is provided a semiconductor manufacturing apparatus comprising: a process tube having a processing chamber formed therein; a boat for moving a plurality of substrates into and out of the processing chamber; A substrate transfer device that transfers the boat to the outside of the processing chamber.
In a semiconductor manufacturing apparatus in which two boats are used,
After processing the substrate held by one of the boats by the process tube, the one boat is carried out of the process tube and transferred to a temporary placement stage separated from the process tube, and then transferred to the other of the boat. The substrate to be processed is transferred by the substrate transfer device.

According to the above-mentioned means, the boat carried out of the processing chamber is transferred to the temporary placing stage remote from the process tube and made to stand by, so that, for example, the thermal influence of the processed substrate held by the boat is reduced. Extending to a new substrate will be prevented. Further, since the boat is exchanged between the temporary placement stage and the position of the process tube, the turning radius can be suppressed to be small.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

In the present embodiment, a semiconductor manufacturing apparatus according to the present invention comprises a batch type vertical hot wall type diffusion CV.
It is configured as a D apparatus (hereinafter, referred to as a diffusion CVD apparatus), and is used for performing a heat treatment such as an annealing process, an oxide film forming process, a diffusion process, and a film forming process on a wafer as a substrate.

As shown in FIG. 1, the diffusion CVD apparatus 1 includes a casing 2 formed in a rectangular parallelepiped box shape in a plan view. A clean module 3 is installed at the rear of the left side wall of the housing 2 (the left, right, front and rear are based on FIG. 1), and the clean module 3 supplies clean air to the inside of the housing 2. I have. A heat treatment stage 4 is set at substantially the center of the rear portion inside the housing 2, and a temporary stage (hereinafter, referred to as a first temporary stage) 5 for a processed boat is provided before and after the left side of the heat treatment stage 4. Of the boat (hereinafter, referred to as a second temporary placement stage) 6 is set. A wafer loading stage 7 is set at substantially the center of the front part inside the housing 2, and a pod stage 8 is set in front of the wafer loading stage 7. On the left side of the wafer loading stage 7, a notch aligning device 9 for aligning the notches of the wafer is provided. Hereinafter, the configuration of each stage will be described in order.

As shown in FIGS. 5 and 6, the heat treatment stage 4 is a process tube 11 made of quartz glass and integrally formed into a cylindrical shape having an open lower end.
Are vertically arranged such that the center line is vertical and supported by the housing 2. The hollow portion of the process tube 11 forms a processing chamber 12 into which a plurality of wafers held concentrically by a boat are loaded, and the lower end opening of the process tube 11 has a wafer as a substrate to be processed. The furnace port 13 for taking in and out of the furnace is constituted. Therefore, the inner diameter of the process tube 11 is set to be larger than the maximum outer diameter of the wafer to be handled.

The lower end surface of the process tube 11 is in contact with the upper end surface of the manifold 14 with a seal ring 15 interposed therebetween. The process tube 11 is supported vertically by the manifold 14 being supported by the housing 2. It is in a state. An exhaust pipe 16 is connected to a part of the side wall of the manifold 14 so as to communicate with the processing chamber 12, and the other end of the exhaust pipe 16 is a vacuum exhaust device for evacuating the processing chamber 12 to a predetermined degree of vacuum. (Not shown). A gas introduction pipe 17 is connected to the other part of the side wall of the manifold 14 so as to communicate with the processing chamber 12, and the other end of the gas introduction pipe 17 is used for supplying a gas such as a source gas or a nitrogen gas. It is connected to a supply device (not shown).

A heater unit 18 is installed concentrically outside the process tube 11 so as to surround the process tube 11. The heater unit 18 is vertically installed by being supported by the housing 2. ing. The heater unit 18 is configured to uniformly heat the entire processing chamber 12.

Immediately below the process tube 11, a cap 19 formed in a disk shape substantially equal to the outer diameter of the process tube 11 is concentrically arranged. The cap 19 is vertically moved by an elevator 20 constituted by a feed screw mechanism. It is designed to be raised and lowered in the direction. Cap 1
Numeral 9 supports the boat 21 standing vertically on the center line. In the present embodiment, two boats 21 are used.

As shown in FIGS. 2 to 6, each of the two boats 21, 21 has a pair of upper and lower end plates 22,
23, and a plurality of (three in this embodiment) holding members 24 that are provided between the end plates 22 and 23 and that are vertically disposed, and each holding member 24 is equally spaced in the longitudinal direction. The wafers W are inserted between the plurality of holding grooves 25 which are provided so as to be opened in the same plane, and the plurality of wafers W are horizontally and centered with each other. It is configured to be aligned and held.

A heat insulating cap 26 is formed below the lower end plate 23 of the boat 21, and is formed on the lower surface of the heat insulating cap 26 in a cylindrical shape having a diameter smaller than the outer diameter of the heat insulating cap 26. The support column 27 is protruded downward in the vertical direction. A space for inserting an arm of a boat transfer device, which will be described later, is formed on the lower surface of the column 27 on the lower surface of the heat insulating cap portion 26, and an engaging portion for engaging the arm with the outer peripheral portion on the lower surface of the column 27. 28 are configured. A base 29 is provided horizontally on the lower surface of the column 27.

As shown in FIGS. 1 to 4, a boat 21 is provided between the first temporary placing stage 5 and the second temporary placing stage 6 and the heat treatment stage 4, the first temporary placing stage 5 and the second temporary placing stage 5. A boat transfer device 30 for transferring the temporary transfer stage 6 is provided. As shown in FIG.
The boat transfer device 30 includes a first arm 31 and a second arm 32 that reciprocate in a horizontal plane. The first arm 31 and the second arm 32 are formed in an arc shape, and are outside the support column 27 of the boat 21. By engaging with the engaging portion 28 of the heat insulating cap portion 26 from below while inserted in the
The entire boat 21 is supported vertically. The first arm 31 moves the boat 21 to the heat treatment stage 4.
The second arm 32 is configured to transfer the boat 21 between the heat treatment stage 4 and the second temporary placement stage 6. .

As shown in FIGS. 1 to 4, a wafer transfer device 40 is installed on the wafer loading stage 7, and the wafer transfer device 40 transfers the wafer W to the pod stage 8 and the notch aligning device 9. Pod 50, notch aligning device 9, and boat 2
1 is configured to be transferred.

That is, as shown in FIG. 7, the wafer transfer device 40 has a base 41,
A turntable 42 that rotates with respect to the base 41 is provided on the upper surface of the device 1. A linear guide 43 is provided on the turntable 42.
Is configured to horizontally move a movable table 44 installed thereon. A mounting table 45 is installed on the moving table 44 so as to be horizontally moved by the moving table 44, and the mounting table 45 has a plurality of tweezers 46 for supporting the wafer W from below (in the present embodiment, a plurality of tweezers 46). (Five), and are mounted horizontally at equal intervals. The wafer transfer device 40 is an elevator 4 constituted by a feed screw mechanism.
7 to ascend and descend.

As shown in FIGS. 7 and 1, the stroke L ₄ of the tweezers 46 of the wafer transfer device 40 is
L ₄ > L ₁ , L ₂ , L ₃ . here,
L ₁ is a pod stage 8 from the center of the wafer transfer device 40.
The distance to the center of, L ₂ is the distance of the distance from the wafer transfer apparatus 40 to the center of the second temporary stage 6, L ₃ from the center of the wafer transfer apparatus 40 to the center of the heat treatment stage 4.

The pod stage 8 has a FOUP (front) as a carrier (storage container) for carrying the wafer W.
opning unified pod. Hereinafter, it is called a pod. ) 50 are placed one by one. The pod 50 is formed in a substantially cubic box shape with one surface opened, and a door 51 is detachably attached to the opening. When a pod is used as a wafer carrier, the wafer is transported in a sealed state, so that the cleanliness of the wafer can be maintained even if particles are present in the surrounding atmosphere. it can. Therefore, the diffusion C
Since it is not necessary to set the cleanliness in the clean room in which the VD device is installed so high, the cost required for the clean room can be reduced. Therefore, in the diffusion CVD apparatus according to the present embodiment, pod 50 is used as a carrier for a wafer. The pod stage 8 is provided with a door opening / closing device (not shown) for opening and closing the door 51 of the pod 50.

Next, the operation of the diffusion CVD apparatus according to the above configuration will be described.

As shown in FIGS. 1 to 4, a pod 50 containing a plurality of wafers W is mounted on a pod stage 8.
Supplied to Pod 5 supplied to pod stage 8
0 indicates that the door 51 is opened by the door opening / closing device.

The wafer W stored in the pod 50 is shown in FIG.
As shown in (b), the wafer is transferred to the boat 21 supported on the heat treatment stage 4 by the wafer transfer device 40 via the notch aligning device 9. That is, FIG.
In the state shown in (a), as shown in (b), the moving table 44 and the mounting table 45 are connected to the pod 50.
The tweezers 46 are inserted into the pods 50 in the direction of the arrow, and after receiving the wafer W in the pods 50 by the tweezers 46, the tweezers 46 are retracted to the position shown in FIG. In this state, the turntable 42 is rotated by about 90 degrees, and subsequently, the moving table 44 and the mounting table 45 are moved in the direction of the notch aligning device 9 to transfer the wafer W of the tweezers 46 to the notch aligning device 9. . After the notch alignment of the wafer W is completed, the wafer transfer device 40 retreats the tweezers 46 to the position shown in (a) after receiving the wafer W from the notch alignment device 9 by the tweezers 46. In this state, the turntable 42 rotates about 90 degrees, and
Then, the mounting table 45 is moved in the direction of the boat 21 to transfer the wafer W on the tweezers 46 to the holding groove 25 of the boat 21. The wafer transfer device 40 in which the wafer W is transferred to the boat 21 rotates about 180 degrees after the moving table 44 and the mounting table 45 are retracted once, and the tweezers 46 are directed to the pod 50 side in FIG. State.

At this time, the outer diameter of the wafer transfer device 40 is as shown in FIG.
, The wafer transfer device 40 can rotate without the wafer W colliding with the pod stage 8 or the second temporary placement stage 6.

Further, since the wafer transfer device 40 has five tweezers 46, the five wafers W are transferred from the five holding grooves of the pod 50 to the five steps of the boat 21 by one transfer operation. It can be transferred to the holding groove 25. Here, the number of wafers W batch processed by the boat 21 is one pod 5
Since the number of wafers W is larger than the number of wafers W stored in the pod 50, the wafer transfer device 40 transfers a predetermined number of wafers W from the plurality of pods 50 to the boat 21 by the elevator 47. When the notch alignment of the wafer W has been performed in advance, the wafer transfer device 40 transfers the wafer W directly from the pod 50 to the boat 21 without passing through the notch alignment device 9.

When a plurality of wafers W specified in advance are transferred to the boat 21, the boat 21 is lifted by the elevator 20 and moved to the processing chamber of the process tube 11, as shown in FIGS. 12 is loaded. When the boat 21 reaches the upper limit, cap 1
9 and the outer peripheral portion of the upper surface is seated on the lower surface of the manifold 14 with the seal ring 15 interposed therebetween.
In order to close the lower end opening of the processing chamber 4 in a sealed state, the processing chamber 12 is closed.
Is airtightly closed.

While the processing chamber 12 is hermetically closed by the cap 19, the processing chamber 12 is evacuated to a predetermined degree of vacuum by the exhaust pipe 16, and is heated by the heater unit 18 to a predetermined processing temperature (for example, 800 to 1000 ° C.). ) Is uniformly heated throughout, and the processing gas is supplied to the processing chamber 12 at a predetermined flow rate by the gas introduction pipe 17.
Thereby, a predetermined heat treatment is performed.

When the preset processing time has elapsed, as shown in FIGS. 3 and 6, the boat 2
1 is lowered by the elevator 20 so that the boat 21
The first processing chamber 12 is carried out (unloaded).
The furnace port 13 of the processing chamber 12 of the process tube 11 from which the boat 21 has been carried out is closed by a shutter (not shown) to prevent the high-temperature atmosphere in the processing chamber 12 from escaping.
The boat 21 carried out of the processing chamber 12 and the group of wafers W held thereon (hereinafter, referred to as a processed boat 21A) are in a high temperature state.

As shown in FIGS. 4 and 9A, the processed boat 21A in the high temperature state carried out of the processing chamber 12 is moved from the heat treatment stage 4 on the axis of the process tube 11 to the first temporary placement stage. 5 、 Boat transfer device 3
0 and is immediately transferred and temporarily placed. That is, as shown in FIG. 9A, the first arm 31 is inserted outside the support 27 of the processed boat 21A and is engaged with the engagement portion 28 of the heat insulating cap 26 from below. By rotating the boat 21A approximately 90 degrees while supporting the boat 21A vertically, the boat 21A is transferred from the heat treatment stage 4 to the first temporary placement stage 5 and stands by.

As shown in FIG. 1, the first temporary placing stage 5 is set near the clean air outlet of the clean module 3.
Processed boat 2 in a high temperature state which was transferred to a temporary storage
1A is extremely effectively cooled by the clean air blown from the clean module 3.

As shown in FIG. 4 and FIG. 9 (b), the boat transfer device 30
When the first boat 1A is retracted to the first temporary placement stage 5, the empty boat (hereinafter, referred to as an empty boat 21B) waiting at the second temporary placement stage 6 is transferred from the second temporary placement stage 6 to the heat treatment stage 4 by the second boat. The boat 21B is transferred by the arm 32, and the empty boat 21B is transferred onto the cap 19. That is, the second arm 32 is inserted into the outside of the column 27 of the empty boat 21B and is engaged with the engaging portion 28 of the heat insulating cap portion 26 from below, so that the empty boat 21B is vertically supported. By rotating by 90 degrees, the empty boat 21 </ b> B is transferred from the first temporary placement stage 5 to the heat treatment stage 4, and is transferred onto the cap 19. In the state where the wafer is transferred onto the cap 19, the three holding members 24 of the empty boat 21B are in a state where the wafer transfer device 40 side is open.

When the empty boat 21B is transferred onto the cap 19, the wafer transfer device 40 moves the wafer W from the pod stage 8 to the heat treatment stage 4 by the operation described above.
And transferred to an empty boat 21B. On this occasion,
Since the processed boat 21A in the high-temperature state is retracted to the first temporary placement stage 5 and is sufficiently cooled by the clean module 3, the processed boat in the high-temperature state is transferred to the empty boat 21B. It is not affected by the heat of 21A.

When a plurality of wafers W specified in advance are transferred to the boat 21, the cap 19 supporting the boat 21 is raised by the elevator 20 to move the supported boat 21 to the process tube 11 as described above. Is carried into the processing chamber 12. Boat 21 carried into processing chamber 12
The wafer W is subjected to a predetermined heat treatment by the above-described operation.

On the other hand, the cap 19 supporting the boat 21
Rises, the processed boat 21A retreated to the first temporary placing stage 5 is transferred to the second temporary placing stage 6 by the first arm 31 of the boat transfer device 30, and placed on a stage (not shown). At this time, the processed boat 21A
Is cooled sufficiently, for example, to 150 ° C. or less. In this state, the three holding members 24 of the processed boat 21A are open on the wafer transfer device 40 side. The first arm 31 returns to the first temporary placement stage 5 and waits for the next operation.

The processed boat 21A is placed in the boat transfer device 3
When the wafer W is transferred to the second temporary placement stage 6 by the first arm 31 of the second temporary placement stage 6, the wafer transfer device 40 transfers the wafer W from the processed boat 21A of the second temporary placement stage 6 according to the operation described above with reference to FIG. The pod is received and transferred to the pod 50 of the pod stage 8. At this time, the processed boat 2
The number of wafers W batch processed by 1A is one pod 5
Since the number of wafers W stored in the pod stage 8 is larger than the number of wafers W stored in the pod stage 8, the wafer transfer device 40 moves the pod stage 8 up and down to a predetermined number (for example, twenty-five). Each). The pod 50 storing the processed wafer W on the pod stage 8 is carried out of the pod stage 8 and carried to the next step.

The empty boat 21B after all the processed wafers W have been discharged (unloaded) by the wafer transfer device 40 is placed on the second temporary placing stage 6 as shown in FIG. And let it stand by. In the above-described embodiment, the case where the discharging operation of the wafer W from the processed boat 21A is performed on the second temporary placing stage 6 has been described. However, the discharging operation of the wafer W from the processed boat 21A is performed. The heat treatment may be performed in the heat treatment stage 4.

Thereafter, the above-described operation is repeated, and the wafer W is batch-processed by the diffusion CVD apparatus 1.

According to the above embodiment, the following effects can be obtained.

1) The processed boat 21A, which has been carried out of the processing chamber 12 of the process tube 11 and brought to a high temperature state, is transferred to the first temporary placing stage 5 which is separated from the heat treatment stage 4 which is a stage on the axis of the process tube 11. By being immediately transferred and retracted by the first arm 31 of the transfer device 30, the processed boat 21A in a high temperature state is
Of the empty boat 21B in the heat treatment stage 4
To prevent new wafers W to be transferred (loaded) from being processed, thereby preventing a decrease in processing accuracy due to the thermal influence of the processed boat 21A on the new wafers W to be processed. Can be.

2) By avoiding the thermal influence of the processed boat 21A on a new wafer W to be processed, the temperature of the processing chamber 12 in the standby state does not need to be lowered, and thus the temperature of the processing chamber 12 in the standby state can be reduced. By lowering the temperature, a decrease in throughput can be avoided beforehand.

3) By avoiding the thermal influence on the wafer W, the accuracy of the heat treatment of the diffusion CVD apparatus can be improved, and the quality and reliability of the semiconductor device manufactured by the wafer can be improved. .

4) By performing the exchange transfer of the processed boat 21A and the empty boat 21B between the first temporary placement stage 5 and the second temporary placement stage 6 and the heat treatment stage 4, the second transfer of the boat transfer device 30 is performed. Since the turning radii of the first arm 31 and the second arm 32 can be set small, the dimensions of the left and right (frontage) and front and rear (depth) of the housing 2 of the diffusion CVD apparatus can be set small.

5) By suppressing the volume of the housing 2 to a small value, the amount of clean air supplied to the clean module 3 can be set small, so that the initial cost and running cost of the diffusion CVD apparatus can be suppressed. it can.

6) Wafer transfer device 4 for wafer W of processed boat 21A after waiting on first temporary placement stage 5
By performing the discharge (unloading) operation by 0 during the heat treatment in the processing chamber 12, the wafer loading operation and the heat treatment can proceed simultaneously, so that the throughput can be improved.

7) The first temporary placing stage 5 for holding the processed boat 21A in a high temperature state on standby
By facing the clean air outlet, the processed boat 21A in a high temperature state can be cooled very effectively, and the cooling time can be shortened.

The present invention is not limited to the above-described embodiment, and it goes without saying that various changes can be made without departing from the scope of the invention.

For example, a diffusion CVD apparatus can be used for all heat treatments such as annealing, oxide film formation, diffusion and film formation.

In this embodiment, the case of a batch type vertical hot wall type diffusion CVD apparatus has been described. However, the present invention is not limited to this, and is applied to all semiconductor manufacturing apparatuses such as a batch type horizontal hot wall type diffusion CVD apparatus. be able to.

In the above embodiment, the case where the heat treatment is performed on the wafer has been described. However, the substrate to be processed may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

[0052]

As described above, according to the present invention,
The effect of heat can be prevented while suppressing an increase in size.

[Brief description of the drawings]

FIG. 1 is a plan sectional view showing a diffusion CVD apparatus according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a state during the processing.

FIG. 3 is a perspective view showing a state after the boat is unloaded.

FIG. 4 is a perspective view showing a state after the boat is replaced.

FIG. 5 is a longitudinal sectional view showing a state during processing.

FIG. 6 is a longitudinal sectional view showing a state after the boat is unloaded.

FIGS. 7A and 7B are side views showing the wafer transfer device, and FIG.
Shows the time of contraction, and (b) shows the time of expansion.

FIGS. 8A and 8B are perspective views showing the boat transfer device, and FIG.
Shows the operation of the first arm, and (b) shows the operation of the second arm.

FIG. 9 is a perspective view showing the operation of the boat transfer device;
(A) shows the state after the retreat of the processed boat, (b) shows the state after the empty boat has been transferred to the heat treatment stage, and (c) shows the state after the empty boat has been transferred to the second temporary storage stage. ing.

[Explanation of symbols]

W: Wafer (substrate), 1: Diffusion CVD apparatus (semiconductor manufacturing apparatus), 2: Housing, 3: Clean module, 4, Heat treatment stage, 5, Temporary placing stage, 6: Temporary placing stage, 7 ... wafer loading stage, 8 ... pod stage, 9 ... notch aligner, 11 ... process tube, 12 ... processing chamber, 13 ... furnace port, 14 ... manifold, 15 ... seal ring, 16 ... exhaust pipe, 17 ... gas introduction pipe , 18 ... heater unit, 19 ... cap, 20 ...
Elevator, 21 ... boat, 21A ... treated boat,
21B: empty boat, 22: upper end plate, 23: lower end plate, 24: holding member, 25: holding groove, 26: heat insulating cap portion, 27: support column, 28: engaging portion, 29: base, 30
... Boat transfer device, 31 first arm, 32 second arm, 40 wafer transfer device, 41 base, 42 turntable, 43 linear guide, 44 moving table, 45
... Mounting stand, 46 ... Tweezer, 47 ... Elevator, 50 ...
Pod, 51 ... door.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/324 H01L 21/324 S (72) Inventor Hidehiro Yanagawa 3-14-20 Higashinakano, Nakano-ku, Tokyo No. Kokusai Denki Co., Ltd. F-term (reference) 5F031 CA02 FA01 FA11 FA12 FA15 GA47 GA50 HA67 KA14 MA28 MA30 5F045 AA06 AA20 BB08 DP19 EN05

Claims (2)

[Claims] A process tube forming a processing chamber;
A boat that moves in and out of the processing chamber to load and unload a plurality of substrates, and a substrate transfer device that transfers the plurality of substrates to and from the boat outside the processing chamber. In the semiconductor manufacturing apparatus used in two units, after processing the substrate held by one of the boats by the process tube, the one boat is unloaded from the process tube to a temporary placement stage separated from the process tube. The semiconductor manufacturing apparatus, wherein the substrate to be processed is transferred to the other of the boats by the substrate transfer device. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the transfer of the substrate to the boat by the substrate transfer device is performed at a position on an axis of the process tube.