JP2002026193A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the manufacturing method for a semiconductor device which enables mounting circuit elements on conducting paths, without using a support board, such as printed board, ceramic board or flexible sheet. SOLUTION: A circuit device 53 constituted in a structure such that the device 53 is provided with a plurality of electrically isolated conductive paths 51, circuit elements 52 secured on the desired conducting paths 51 among the conducting paths 51, and an insulative resin 50 which covers the elements 52 and integrally supports the paths 51. The rear surfaces of the paths 51 and of the resin 50 substantially planarized is provided, whereby the number of the constituent elements of the device 53 are minimized, and the conventional challenges for the manufacturing method of the device 53 are solved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a thin semiconductor device which does not require a supporting substrate and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device set in an electronic device is used for a portable telephone, a portable computer, and the like, so that a reduction in size, thickness, and weight is required.

For example, a semiconductor device will be described as an example of a semiconductor device. As a general semiconductor device, there is a conventional package type semiconductor device sealed with a usual transfer mold. This semiconductor device is mounted on a printed circuit board PS as shown in FIG.

In this package type semiconductor device, the periphery of a semiconductor chip 2 is covered with a resin layer 3,
The lead terminal 4 for external connection is led out from the side part of FIG.

However, this package type semiconductor device 1
The lead terminal 4 was outside the resin layer 3, the overall size was large, and the size, thickness, and weight were not satisfied.

Therefore, various companies have competed to develop various structures in order to realize miniaturization, thinning and weight reduction, and recently called a CSP (chip size package), a wafer scale CSP equivalent to the chip size, Alternatively, a CSP having a size slightly larger than the chip size has been developed.

FIG. 20 shows a case where a glass epoxy substrate 5 is used as a support substrate, and the CS is slightly larger than the chip size.
It shows P6. Here, the glass epoxy substrate 5
It is assumed that the transistor chip T is mounted on the semiconductor device.

A first electrode 7, a second electrode 8, and a die pad 9 are formed on the surface of the glass epoxy substrate 5, and a first back electrode 10 and a second back electrode 11 are formed on the back surface.
Are formed. And, through the through hole TH,
The first electrode 7 and the first back electrode 10 are electrically connected, and the second electrode 8 and the second back electrode 11 are electrically connected. The die pad 9 has the bare transistor chip T
Are fixed, the emitter electrode of the transistor is connected to the first electrode 7 via the thin metal wire 12, and the base electrode of the transistor is connected to the second electrode 8 via the thin metal wire 12. Further, a resin layer 13 is provided on the glass epoxy substrate 5 so as to cover the transistor chip T.

Although the CSP 6 employs the glass epoxy substrate 5, unlike the wafer scale CSP, the CSP 6 has an advantage that the extending structure from the chip T to the backside electrodes 10 and 11 for external connection is simple and can be manufactured at low cost. Have.

The CSP 6 is mounted on a printed circuit board PS as shown in FIG. The printed circuit board PS is provided with electrodes and wiring constituting an electric circuit.
The SP6, the package type semiconductor device 1, the chip resistor CR or the chip capacitor CC and the like are electrically connected and fixed.

The circuit constituted by the printed circuit board is mounted in various sets.

Next, a method of manufacturing the CSP will be described with reference to FIGS. In FIG. 21, a flowchart entitled “Galaepoe / flexible substrate in the center” is referred to.

First, a glass epoxy substrate 5 is prepared as a base material (support substrate), and Cu foils 20 and 21 are press-bonded to both surfaces thereof via an insulating adhesive (see FIG. 21A).

Subsequently, the first electrode 7, the second electrode 8, the die pad 9, the first back electrode 10, and the second back electrode 1
The Cu foils 20, 21 corresponding to 1 are coated with an etching-resistant resist 22, and the Cu foils 20, 21 are patterned. The patterning may be performed separately for the front and back sides (see FIG. 21B).

Subsequently, a hole for the through hole TH is formed in the glass epoxy substrate by using a drill or a laser, and the hole is plated to form the through hole TH. The through-hole TH electrically connects the first electrode 7 to the first back electrode 10, and the second electrode 8 to the second back electrode 10 (see FIG. 21C).

Although not shown in the drawings, the first electrode 7 and the second electrode 8 serving as the bonding posts are plated with Ni, and the die pads 9 serving as the die bonding posts are plated with Au. Is die bonded.

Finally, the emitter electrode of the transistor chip T and the first electrode 7, and the base electrode and the second electrode 8 of the transistor chip T are connected via a thin metal wire 12 and covered with a resin layer 13 (see FIG. 1). (See FIG. 21D).

Then, dicing is performed as necessary to separate the individual electric elements. In FIG. 21, only one transistor chip T is provided on the glass epoxy substrate 5, but in reality, many transistor chips T are provided in a matrix. Therefore, they are finally separated individually by a dicing device.

By the above manufacturing method, a CSP type electric element using the support substrate 5 is completed. This manufacturing method
The same applies to the case where a flexible sheet is used as the support substrate.

On the other hand, a manufacturing method using a ceramic substrate is shown in the flow on the left side of FIG. After preparing a ceramic substrate that is a support substrate, a through hole is formed, and then
The front and back electrodes are printed and sintered using conductive paste. After that, until the resin layer of the above-described manufacturing method is covered, the manufacturing method is the same as that of FIG. 21. However, the ceramic substrate is very fragile, and unlike a flexible sheet or a glass epoxy substrate, it is chipped immediately. There is a problem that the mold used cannot be used. For this reason, after sealing resin is potted and cured, it is polished to flatten the sealing resin, and finally separated individually using a dicing device.

[0021]

Here, in FIG. 20, the transistor chip T, the connection means 7 to 12 and the resin layer 13 are components necessary for electrical connection to the outside and protection of the transistor. However, it has been difficult to provide an electric circuit element that can be reduced in size, thickness, and weight with these components.

Further, the glass epoxy substrate 5 serving as the support substrate is essentially unnecessary as described above. However, in the manufacturing method, the glass epoxy substrate 5 is used as a supporting substrate for bonding the electrodes, and the glass epoxy substrate 5 cannot be eliminated.

Therefore, the use of the glass epoxy substrate 5 increases the cost, and further, since the glass epoxy substrate 5 is thick, it becomes thick as a circuit element.
There was a limit in reducing the size, thickness, and weight.

Further, in the case of a glass epoxy substrate or a ceramic substrate, a step of forming a through hole for connecting electrodes on both surfaces is indispensable, and there has been a problem that the manufacturing process becomes long.

[0025]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and firstly, a plurality of electrically separated conductive paths, a circuit element fixed on a desired conductive path, and the circuit An insulating resin covering the element and integrally supporting the conductive path, by providing a circuit device in which the back surface of the conductive path and the back surface of the insulating resin are substantially flattened,
An object of the present invention is to solve the conventional problem by minimizing the number of components.

Second, a plurality of conductive paths electrically separated by the separation groove, a circuit element fixed on a desired conductive path,
An insulating resin that covers the circuit element and is filled in the separation groove between the conductive paths and exposes only the back surface of the conductive path to integrally support the back surface of the conductive path and the insulating resin. By providing a circuit device in which the back surface is substantially flattened, the back surface of the conductive path can be used for connection to the outside, and the through hole is not required, thereby solving the conventional problem.

Third, a step of preparing a conductive foil and forming a conductive path by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path;
Fixing a circuit element on the desired conductive path, covering the circuit element, and molding with an insulating resin so as to be filled in the separation groove, and forming a part of the thickness where the separation groove is not provided. By providing a method of manufacturing a circuit device comprising a step of removing the conductive foil and substantially flattening the back surface of the conductive path and the back surface of the insulating resin, the conductive foil forming the conductive path is It is a starting material, and the conductive foil has a supporting function until the insulating resin is molded, and after the molding, the insulating resin has a supporting function. be able to.

Fourth, a step of preparing a conductive foil and forming a conductive path by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path;
Fixing a plurality of circuit elements on the desired conductive path, forming connection means for electrically connecting electrodes of the circuit element and the desired conductive path, and covering the plurality of circuit elements. A step of molding with an insulating resin so as to be filled in the separation groove, and removing the conductive foil in a thickness portion where the separation groove is not provided to form a back surface of the conductive path and a back surface of the insulating resin. Mass production of a large number of circuit devices is provided by providing a method of manufacturing a circuit device including a step of substantially flattening and a step of separating each circuit device individually resin-sealed with the insulating resin. It is possible to solve the conventional problem.

Fifth, a step of preparing a conductive foil and forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; A step of fixing circuit elements constituting each semiconductor device on the conductive path, and a step of individually covering each semiconductor device with an insulating resin so as to be filled in the isolation groove, thereby providing a conductive element. Warpage of the foil is suppressed.

Sixth, by forming a corrosion-resistant conductive film on at least a region serving as a conductive path on the surface of the conductive foil, when a separation groove is formed in the conductive foil, the conductive film is formed on the conductive foil. Eaves remain on top. Therefore, the adhesion between the conductive foil and the insulating resin when each of the semiconductor devices is individually covered with the insulating resin is improved.

Seventh, after each of the semiconductor devices is individually covered with an insulating resin so as to fill the separation groove, the conductive foil on the side where the separation groove is not provided is removed to a predetermined position. And a step of separating the respective semiconductor devices individually coated with the insulating resin. For this reason, the semiconductor devices are not separated from each other until the final stage, so that the conductive foil can be used as one sheet for each process, and the workability is good.

Eighth, the back surface of the conductive foil and the back surface of the conductive resin and the back surface of the insulating resin are characterized in that the back surface of the conductive foil is the electrode on the print cartridge which is in contact with the electrode on the head side of the inkjet printer. Are substantially flattened, the contact stress between the two electrodes can be reduced, and the reliability is improved.

[0033]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device according to a first embodiment of the present invention and a method for manufacturing the same will be described with reference to the drawings.

FIG. 1A has a conductive path 51 embedded in an insulating resin 50, a circuit element 52 is fixed on the conductive path 51, and the conductive path 51 is formed by the insulating resin 50. A pair of supported semiconductor devices 53 is shown. still,
Although only a pair of semiconductor devices 53 are illustrated in FIG. 1A for convenience of explanation as described above, originally, a large number of semiconductor devices 53 are formed adjacent to each other, and they are finally separated and illustrated. The individual semiconductor device 53 as described above is obtained.

This structure comprises circuit elements 52A and 52B, a plurality of conductive paths 51A, 51B and 51C,
A, 51B, and 51C are formed of three materials of insulating resin 50 embedded therein.
Separation grooves 61 filled with zeros are provided. The individual semiconductor devices 53 (the conductive paths 51 constituting the individual semiconductor devices 53) are each supported by an insulating resin 50.

As the insulating resin 50, a thermosetting resin such as an epoxy resin, or a thermoplastic resin such as a polyimide resin or polyphenylene sulfide can be used. As the insulating resin 50, any resin can be adopted as long as it is a resin that is hardened using a mold or a resin that can be applied and covered. Further, as the conductive path 51, a conductive foil mainly composed of Cu, a conductive foil mainly composed of Al, or Fe
A conductive foil made of an alloy such as -Ni (iron-nickel), Cu-Al (copper-aluminum), or Al-Cu-Al (aluminum-copper-aluminum) can be used. Of course, other conductive materials are also possible. Particularly, a conductive material that can be etched and a conductive material that evaporates by laser are preferable.

The connection means of the circuit element 52 includes a thin metal wire 55A such as Au by wire bonding, a conductive ball made of a brazing material, a flat conductive ball, a brazing material 55B such as a solder, a conductive paste 55C such as an Ag paste, It is a conductive film or an anisotropic conductive resin. These connection means are selected depending on the type of the circuit element 52 and the mounting form of the circuit element 52. For example, in the case of a bare semiconductor element, a thin metal wire is selected for the connection between the electrode on the surface and the conductive path 51, and C
For SP components and SMD components, solder balls and solder bumps are selected.

Further, the chip resistor and the chip capacitor are:
The solder 55B is selected. There is no problem even if a packaged circuit element, for example, a BGA or the like is mounted on the conductive path 51, and when this is adopted, solder is selected as the connection means. More specifically, as the circuit element 52, SiG
e, a semiconductor element made of a compound semiconductor such as GaAs may be used.

In order to fix the circuit element 52 and the conductive path 51A, an insulating adhesive is selected if no electrical connection is required, and a conductive film is employed if an electrical connection is required. You. Here, at least one conductive film is sufficient.

The material considered as the conductive film is A
g, Au, Pd (palladium), Al, or the like, and is coated by deposition under low or high vacuum such as evaporation, sputtering, or CVD, plating, or sintering.

For example, Ag adheres to Au and also adheres to the brazing material. Therefore, if the Au film is coated on the back surface of the chip, the chip can be thermocompression-bonded by directly covering the conductive path 51A with the Ag film, Au film, or solder film, and the chip can be fixed via a brazing material such as solder. .
Here, the conductive film may be formed on the uppermost layer of the conductive film laminated in a plurality of layers. For example, a conductive path 51 of Cu
On top of A, two layers of Ni coating and Au coating are sequentially applied, three layers of Ni coating, Cu coating and solder coating are sequentially applied, two layers of Ag coating and Ni coating are provided. Those coated in order can be formed. Although there are many other types and laminated structures of these conductive films, they are omitted here.

Since the semiconductor device 53 supports the conductive path 51 with the insulating resin 50 as a sealing resin, a support substrate is not required, and the semiconductor device 53 includes the conductive path 51, the circuit element 52, and the insulating resin 50. You. This configuration is a feature of the present invention. As described in the section of the related art, the conductive path of the conventional semiconductor device is supported by a support substrate or supported by a lead frame. However, the present semiconductor device has a feature that it is thin and inexpensive because it is composed of the minimum necessary components and does not require a support substrate.

Further, in addition to the above-described configuration, there is provided an insulating resin 50 which covers the circuit element 52 and is filled in the separation groove 61 between the conductive paths 51 and integrally supported.

A separation groove 61 is formed between the conductive paths 51.
By filling the insulating resin 50 here, there is an advantage that mutual insulation can be achieved.

The circuit element 52 is covered and the conductive path 5
There is an insulating resin 50 which is filled in the separation groove 61 between the two and exposes only the back surface of the conductive path 51 and integrally supports it.

The fact that the back surface of the conductive path is exposed is one of the features of the present invention. The back surface of the conductive path can be used for connection to the outside, and as shown in FIG. 20, it has a feature that the through hole TH of the conventional structure can be eliminated.

Further, when the circuit element is directly fixed via a conductive film such as brazing material, Au, Ag, or the like, the conductive path 5
Since the back surface of 1 is exposed, heat generated from circuit element 52A can be transmitted to the mounting board via conductive path 51A. In particular, the present invention is effective for a semiconductor chip capable of improving characteristics such as an increase in drive current due to heat radiation.

Also, as shown in FIG. 6, each semiconductor device 53 composed of a desired circuit element 52 mounted on a conductive path 51 is individually resin-sealed with an insulating resin 50. This is one of the features of the invention. Thereby, the occurrence of warpage of the conductive foil (semiconductor device) can be suppressed as compared with the case where the insulating resin is coated over one surface (a wide range) of the conductive foil.

Hereinafter, a method for manufacturing the semiconductor device according to the first embodiment will be described with reference to FIGS.

First, as shown in FIG. 2, a sheet-shaped conductive foil 60 is prepared. This conductive foil 60 has an adhesive property of brazing material,
The material is selected in consideration of the bonding property and plating property.
Or a conductive foil made of an alloy such as Fe-Ni or the like.

The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of subsequent etching.
A 0 μm (2 oz) copper foil was employed. But 300
Basically, it is good even if it is not less than 10 μm. As will be described later, it is sufficient that the separation groove 61 shallower than the thickness of the conductive foil 60 can be formed.

The sheet-shaped conductive foil 60 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut to a predetermined size may be used. It may be prepared and transported to each step described later.

Subsequently, there is a step of removing the conductive foil 60 excluding at least a region to be the conductive path 51 so as to be thinner than the thickness of the conductive foil 60. Then, there is a step of covering the separation groove 61 and the conductive foil 60 formed in this removing step with the insulating resin 50.

First, a photoresist (etching resistant mask) PR is formed on the conductive foil 60, and the photoresist PR is patterned so as to expose the conductive foil 60 excluding the region serving as the conductive path 51 (see FIG. 3). reference). Then, etching is performed through the photoresist PR (see FIG. 4).

The depth of the separation groove 61 formed by etching is, for example, 50 μm, and the side surface thereof is rough, so that the adhesiveness with the insulating resin 50 is improved.

Although the side wall of the separation groove 61 is schematically shown as a straight line, it has a different structure depending on the removing method. This removal step can employ wet etching, dry etching, laser evaporation, and dicing. In the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil is dipped in the etchant or showered with the etchant. Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure.

In the case of dry etching, anisotropic and non-anisotropic etching is possible. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Furthermore,
Anisotropic and non-anisotropic etching can be performed depending on sputtering conditions.

In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 61 is formed straight.

Furthermore, in dicing, it is impossible to form a bent and complicated pattern, but it is possible to form a lattice-shaped separation groove.

In FIG. 3, a conductive film having corrosion resistance to an etching solution may be selectively coated instead of the photoresist PR. When the conductive film is selectively applied to a portion to be a conductive path, the conductive film serves as an etching protective film, and the separation groove can be etched without employing a resist.
Materials that can be considered as this conductive film are Ag, Au, P
d or Al. Moreover, these corrosion-resistant conductive films have a feature that they can be utilized as they are as die pads and bonding pads.

For example, an Ag film adheres to Au and also adheres to a brazing material. Therefore, if the Au film is coated on the back surface of the chip, the chip can be thermocompression-bonded to the Ag film on the conductive path 51 as it is, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible. Therefore, there is an advantage that these conductive films can be used as die pads and bonding pads as they are.

Subsequently, there is a step of electrically connecting and mounting the circuit element 52 to the conductive foil 60 in which the separation groove 61 is formed as shown in FIG.

As the circuit element 52, Si, SiG
e, semiconductor elements such as transistors, diodes, IC chips, and semiconductor lasers, and passive elements such as chip capacitors and chip resistors, which are made of a compound material such as GaAs. In addition, although the thickness as a semiconductor device is increased, CS
Face-down semiconductor elements such as P and BGA can also be mounted.

Here, the bare transistor chip 52
A is die-bonded to the conductive path 51A, and the emitter electrode and the conductive path 51B, and the base electrode and the conductive path 51B are connected via a thin metal wire 55A fixed by ball bonding by thermocompression bonding or wedge bonding by ultrasonic waves. . 52B is a chip capacitor or a passive element, which is a brazing material such as solder or a conductive paste 5;
It is fixed at 5B.

Further, as shown in FIG. 6, there is a step of attaching an insulating resin 50 to the conductive foil 60 and the separation groove 61.
This can be achieved by transfer molding, injection molding, or dipping. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a polyimide resin and polyphenylene sulfide can be realized by injection molding.

In the present embodiment, the thickness of the insulating resin coated on the surface of the conductive foil 60 is adjusted so as to cover about 100 μm from the top of the circuit element. This thickness can be increased or reduced in consideration of strength.

The feature of this step is that the conductive foil 60 serving as the conductive path 51 becomes a support substrate until the insulating resin 50 is covered. Conventionally, as shown in FIG. 21, the conductive paths 7 to 11 are formed by using a support substrate 5 which is not originally required.
Is a material necessary as it is as an electrode material. Therefore, there is an advantage that the operation can be performed while omitting the constituent materials as much as possible, and the cost can be reduced.

Since the separation groove 61 is formed to be shallower than the thickness of the conductive foil 60, the conductive foil 60 is not individually separated as the conductive path 51. Therefore, it can be handled integrally as a sheet-shaped conductive foil 60, and has a feature that when molding an insulating resin, the work of transporting to a mold and mounting on the mold is extremely simple.

The main feature of this step is that the semiconductor device 53 composed of the above-described conductive path 51 and the circuit element 52 fixed on the conductive path 51 is individually transferred to each semiconductor device 53 by transfer molding. (See FIG. 6).

Thus, there is an advantage that the occurrence of warpage of the conductive foil 60 can be suppressed when the insulating resin 50 is collectively molded on one surface (wide area) of the conductive foil 60 as in the related art.

A method for suppressing the occurrence of warpage by mixing a filler for preventing warpage into the resin is also conceivable, but the occurrence cannot be completely suppressed. Further, in the case where the circuit element 52 is a resin that seals an element that emits light such as a light emitting diode or a semiconductor laser or an element that transmits and receives light such as IrDA, light is diffusely reflected. Fillers and the like cannot be mixed. Therefore, in such a case, it is effective to apply the individual molding method of the present invention. Of course, the resin in this case needs to be able to transmit light, and what is called a transparent resin,
Also, a resin that is opaque but can transmit light of a predetermined wavelength is used.

Subsequently, the back surface of the conductive foil 60 is chemically and / or
Alternatively, there is a step of physically removing and separating as a conductive path 51. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.

In the experiment, the entire surface was cut by about 30 μm by a polishing device or a grinding device, and the insulating resin 50 was
Is exposed. This exposed surface is indicated by a dotted line in FIG. As a result, the conductive path 51 having a thickness of about 40 μm is formed.
And separated. Further, the entire surface of the conductive foil 60 may be wet-etched before the insulating resin 50 is exposed, and thereafter, the entire surface may be shaved by a polishing or grinding device to expose the insulating resin 50.

As a result, a structure is obtained in which the surface of each conductive path 51 is exposed on the surface of the insulating resin 50 (see FIG. 6). However, even in this state, the conductive foil 60 can be handled as one sheet as shown in FIG.

As described above, according to the present invention, in the step of shaving the conductive foil 60 by the above-mentioned polishing or grinding, the conductive foil 6
0 and the back surface of the insulating resin 50 are cut so as to be substantially flat.

Finally, a conductive material such as solder is provided on the exposed surface of the conductive path 51 as necessary (in FIG. 1A, the description given with reference numerals is omitted, but the surface of the insulating resin 50 is omitted). The semiconductor device 53 is completed by covering the semiconductor device 53 (corresponding to a protruding portion) (see FIG. 1A). The conductive path 51 is prevented from being oxidized by applying a conductive material such as solder on the surface of the conductive path 51.

When a conductive film is applied to the back surface of the conductive path 51, the conductive film may be formed in advance on the back surface of the conductive foil shown in FIG. In this case, the portion corresponding to the conductive path may be selectively applied. The deposition method is, for example, plating. The conductive film is preferably made of a material having resistance to etching. Furthermore, when this conductive coating is adopted,
The conductive paths 51 can be separated only by etching without polishing.

Furthermore, in the present manufacturing method, only the transistor and the chip resistor are mounted on the conductive foil 60, but they may be arranged in a matrix as one unit, or one of the circuit elements may be arranged. May be arranged as a unit in a matrix. In this case, the semiconductor device 53 is completed by being individually separated by a dicing apparatus as described later.

Further, the wiring may be formed as a conductive path to form a hybrid circuit, or may be formed in a matrix.

The separation line is indicated by the arrow shown in FIG. 6 and can be realized by dicing, cutting, chocolate break, or the like. Further, a peeling method using a press or the like may be used. Here, when a peeling method using a press mechanism (see a dashed line) is adopted, the copper pieces 51D at both ends of the insulating resin 50 covering the semiconductor device 53 are peeled off as shown in FIG. State. In this case, a frame cut mold is not required, which is effective in reducing costs. Also, by molding the insulating resin 50 on the entire surface of the conductive foil 60, there is no need to remove the back surface of the resin, and there is no need to remove the back surface of the resin.

In addition, dicing is particularly preferred because it is frequently used in a normal method of manufacturing a semiconductor device, and a very small object can be separated.

The right side of FIG. 22 shows a flow briefly summarizing the present invention. Preparation of Cu foil, plating of Ag or Ni, half etching, die bonding,
The semiconductor device can be realized by nine steps of wire bonding, transfer molding, removal of the back surface Cu foil, back surface treatment of the conductive path, and dicing. Moreover, all processes can be performed in-house without supplying a supporting substrate from a manufacturer.

By the above manufacturing method, the insulating resin 50
The conductive path 51 is embedded in the semiconductor device 53, and a flat semiconductor device 53 in which the back surface of the insulating resin 50 matches the back surface of the conductive path 51 can be realized.

The feature of the present manufacturing method is that the conductive path 51 can be separated using the insulating resin 50 as a supporting substrate. The insulating resin 50 is a material necessary as a material for embedding the conductive path 51, and does not require an unnecessary support substrate 5 unlike the conventional manufacturing method shown in FIG. Therefore,
It is characterized by being able to be manufactured with minimum materials and realizing cost reduction.

Then, as described above, the semiconductor device 53 composed of the conductive path 51 and the circuit element 52 fixed on the conductive path 51 is individually transfer-molded for each semiconductor device 53, so that the warpage is reduced. The feature is that generation can be suppressed. Particularly, it is suitable for handling a resin into which a filler for preventing warpage cannot be mixed.

The thickness of the insulating resin from the surface of the conductive path 51 can be adjusted when the insulating resin is attached in the previous step. Therefore, the thickness of the semiconductor device 53 can be made thicker or thinner, though it depends on the circuit element to be mounted. Here, 40 μm is applied to the insulating resin 50 having a thickness of 400 μm.
semiconductor device 5 in which m conductive paths 51 and circuit elements are embedded
3 (see FIG. 1A).

A semiconductor device 56 according to a second embodiment of the present invention will be described with reference to FIG.

This structure has a structure in which the conductive film 5 is formed on the surface of the conductive path 51.
7 are formed, and the rest is substantially the same as the structure of FIG. Therefore, the conductive film 57 will be described.

The first feature is that a conductive film 57 is provided to prevent warping of the conductive path and the semiconductor device.

In general, an insulating resin and a conductive path material (hereinafter, referred to as a conductive path material)
Called the first material. Due to the difference in the coefficient of thermal expansion described in (1), the semiconductor device itself warps, and the conductive path is bent or peeled off. Furthermore, since the thermal conductivity of the conductive path 51 is superior to the thermal conductivity of the insulating resin, the temperature of the conductive path 51 rises first and expands. Therefore, by covering the second material having a smaller coefficient of thermal expansion than the first material, it is possible to prevent the conductive path from being warped or peeled off, and to prevent the semiconductor device from being warped. In particular, when Cu is adopted as the first material,
Au, Ni, Pd and the like are preferable as the second material. The expansion coefficient of Cu is 16.7 × 10 ⁻⁶ and the expansion coefficient of Au is 14 × 1
0 ⁻⁶ , the expansion coefficient of Ni is 12.8 × 10 ⁻⁶ , and the expansion coefficient of Pd is 8.9 × 10 ⁻⁶ . Incidentally, Ag or Al may be used.

A second feature is that the second material has an anchor effect. The eaves 58 are formed of the second material, and the eaves 5 are attached to the conductive paths 51.
Since 8 is embedded in the insulating resin 50, an anchor effect is generated, and a structure in which the conductive path 51 can be prevented from coming off is obtained.

Hereinafter, a method of manufacturing the semiconductor device according to the second embodiment will be described with reference to FIGS. Note that, except that the second material 70 serving as an eaves is adhered, the second embodiment is substantially the same as the first embodiment, and thus detailed description is omitted.

First, as shown in FIG. 8, a conductive foil 60 in which a second material 70 having a small etching rate (hereinafter, also referred to as a conductive film 70) is coated on a conductive foil 60 made of a first material. prepare.

For example, N on the Cu foil as the conductive foil 60
When the second material 70 made of i is deposited, Cu and Ni can be etched at once with ferric chloride or cupric chloride,
This is preferable because Ni is formed as the eaves 58 due to the difference in the etching rate. The thick solid line is the conductive film 70 made of Ni, and its thickness is preferably about 1 to 10 μm. Also, the eaves 58 are more likely to be formed as the film thickness of Ni is larger.

Further, the second material may cover a material which can be selectively etched with the first material. In this case, first, a film made of the second material is patterned so as to cover the formation region of the conductive path 51, and the eaves 58 can be formed by etching the film made of the first material using this film as a mask. is there. As the second material in this case, Al, Ag, Au, or the like can be considered (see FIG. 8).

Subsequently, there is a step of removing the conductive foil 60 excluding at least the region serving as the conductive path 51 so as to be thinner than the thickness of the conductive foil 60.

A photoresist PR may be formed on the conductive film 70, the photoresist PR may be patterned so that the conductive film 70 excluding the region serving as the conductive path 51 is exposed, and etching may be performed through the photoresist PR.

As described above, when the etching is performed by using an etchant of ferric chloride or cupric chloride or the like, the conductive film 7 is formed.
Since the etching rate of 0 (Ni) is smaller than the etching rate of the conductive foil 60 (Cu), the eaves 58 appear as the etching proceeds.

The conductive foil 6 on which the separation groove 61 is formed
In step (FIG. 11) of mounting the circuit element 52 on the conductive foil 60 and the insulating resin 50, the conductive foil 60 and the separation groove 61 are covered. At this time, the insulating resin 5
Individually mold at 0. Thereby, the occurrence of warpage of the conductive foil 60 can be suppressed as compared with the case where the insulating resin 50 is collectively molded on one surface (a wide range) of the conductive foil 60. Then, the back surface of the conductive foil 60 is chemically and / or physically removed and separated as a conductive path 51 (FIG. 1).
2) and a process (FIG. 7) of forming a conductive film on the back surface of the conductive path and completing it is the same as the above-described manufacturing method.
The description is omitted.

Although the illustration is omitted, when a separation method using a press mechanism is adopted in the separation step, both end portions of the insulating resin 50 covering the semiconductor device 56 are similar to those shown in FIG. The copper piece (as well as the conductive film) is peeled off. In this case, a frame cut mold is not required, which is effective in reducing costs. Further, the entire surface is made of the conductive foil 60 and the insulating resin 50 is formed.
By molding the resin, there is also no advantage that the back surface of the resin is not formed and the deburring process of the back surface is unnecessary, so that workability is good.

Further, according to the present invention, after one kind of circuit elements are arranged in a matrix, each circuit element is individually sealed with an insulating resin, and then each is separated to form a discrete element,
The present invention may be applied to an IC element.

In the following, further types of semiconductor devices and embodiments of a mounting method thereof will be described.

FIG. 13 shows a face-down type circuit element 8.
1 shows a semiconductor device 81 on which a “0” is mounted. As the circuit element 80, a bare semiconductor chip, a CSP or BGA having a sealed surface, or the like is applicable. FIG. 14 shows a semiconductor device 83 on which passive elements 82 such as a chip resistor and a chip resistor are mounted. Since they do not require a supporting substrate, they are thin and are sealed with an insulating resin, so that they have excellent environmental resistance.

FIG. 15 illustrates a real layer structure. The semiconductor device 53, 81, 83 of the present invention described so far is mounted on a conductive path 85 formed on a mounting board 84 such as a printed board, a metal board, or a ceramic board.

In particular, since the conductive path 51 A to which the back surface of the semiconductor chip 52 is fixed is thermally coupled to the conductive path 85 of the mounting board 84, heat can be radiated through the conductive path 85. When a metal substrate is used as the mounting substrate 84, the heat dissipation of the metal substrate is also helped, and the temperature of the semiconductor chip 52 can be further reduced. Therefore, the driving capability of the semiconductor chip can be improved.

For example, power MOS, IGBT, SIT,
Transistor for driving large current, IC for driving large current (M
OS type, BIP type, Bi-CMOS type) memory element and the like are preferable.

The metal substrate is an Al substrate, Cu
A substrate or an Fe substrate is preferable, and an insulating resin and / or an oxide film or the like is formed in consideration of a short circuit with the conductive path 85.

Further, in the present embodiment, in consideration of the problem that the conductive foil 60 is warped, each semiconductor device 53 is individually molded with the insulating resin 50 as one unit. The present invention is not limited to this, and various configurations can be applied as long as the occurrence of warpage can be suppressed. For example, when the conductive foil 60 is treated as one sheet, the sealing resin is disposed at a predetermined interval. A method is also conceivable in which a desired slit is inserted so as to divide the insulating resin 50 and the insulating resin 50 is subdivided by the slit, thereby suppressing the occurrence of warpage.

[0109] When the plurality of semiconductor devices 53 and 56 are formed in a line, for example, when the plurality of semiconductor devices 53 and 56 are formed in a line, the plurality of semiconductor devices 53 and 5 may be used.
Each of these semiconductor devices 53 and 56 is replaced with an insulating resin 50.
Can be individually molded. Of course, the interval between slits is adjusted according to the thickness of the conductive foil 60 or the insulating resin 50.

Here, the semiconductor device of the present invention can be used for various products. For example, an application example of an ink jet printer will be described with reference to FIGS.

Here, the ink jet printer is
As shown in FIG. 16, the printer main unit 91, the control IC 9
2 and a print cartridge 93 on which an EEPROM 94 described later is mounted. Reference numeral 95 denotes an ink discharge unit.

In the present embodiment, a storage element (for example, a nonvolatile semiconductor storage device called an EPROM, an EEPROM, a flash memory or the like, hereinafter referred to as an EE
It is called PROM94. ) Is applied to the present invention, it can be constituted by the minimum necessary components as described above, and furthermore, each semiconductor device is not separated until the final stage, and the conductive foil is separated by one. The sheet can be supplied to each step as a sheet, has good workability, and is advantageous for mass production, and has the following effects.

That is, as shown in FIG. 18A, the back surface of the conductive foil 60 contacts the electrode (not shown) on the head side of the ink jet printer on the side of the print cartridge 93 on the E side.
When the electrode 51 of the EPROM 94 is used, as described above, the conductive foil 60 (EEPR on the print cartridge 93 side) is used.
Since the back surface of each electrode 51a, 51b, 51c) of the OM 94 and the back surface of the insulating resin 50 are substantially flat,
When the print cartridge 93 (each electrode of the EEPROM 94) is brought into contact with the printer body device 91 (the electrode of the control IC 92), the contact stress between the two electrodes can be reduced, and the reliability of the device is improved. The electrodes 51a, 51b, 5
The surface of 1c is plated with Au, and corresponds to a portion exposed from the insulating resin 50.

Further, by applying the present invention, the EEP
The shape of the ROM 94 can be arbitrarily changed because there is no supporting substrate 100 having the conventional configuration shown in FIG. 18B, and the degree of freedom when mounting the print cartridge 93 in the mounting portion (groove or the like) increases.

More specifically, the conventional supporting substrate 100
The potting resin 101 is not formed in a heaped shape on the top, and the thickness itself can be arbitrarily changed by eliminating the need for the support substrate 100, and is mounted on the mounting portion (groove or the like) of the print cartridge 93. In this case, the surface of the EEPROM 94 can be formed flat with respect to the surface of the print cartridge 93. Also, 102a, 1
Numerals 02b and 102c denote electrodes of the EEPROM, and the surfaces of the electrodes 102a, 102b and 102c are plated with Au.

As described above, the present invention has been described by taking an ink jet printer as an example. However, the present invention is not limited to this. For example, a liquid, a solid, a powder, or the like is supplied, and the In a main body device (supply device) having a function capable of rewriting desired management (for example, remaining amount detection) data of liquid, solid, powder, or the like,
The present invention can be applied to a contact electrode on the non-volatile semiconductor storage device side which contacts the electrode on the main device (supply device) side and rewrites desired management (remaining amount detection) data. By utilizing the feature that the back surface of the electrode (conductive path) is substantially flat with the back surface of the insulating resin that seals them, a further effect is obtained by using the present invention as a contact electrode. Can be expected.

[0117]

As is apparent from the above description, according to the present invention, a plurality of conductive paths are formed by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for a region serving as a conductive path. And fixing a circuit element constituting each semiconductor device on the conductive path, and individually covering each semiconductor device with an insulating resin so as to fill the separation groove. Accordingly, occurrence of warpage of the conductive foil can be suppressed, and the reliability of the semiconductor device can be improved.

Further, by forming a corrosion-resistant conductive film on at least a region to be a conductive path on the surface of the conductive foil,
When a separation groove is formed in the conductive foil, the conductive film remains in the shape of an eaves on the upper surface of the conductive foil. Therefore, when each of the semiconductor devices is individually covered with the insulating resin, the conductive foil and the insulating resin are used. And the reliability of the semiconductor device is improved.

Further, after individually covering each of the semiconductor devices with an insulating resin so as to fill the separation groove, the conductive foil on the side where the separation groove is not provided is removed to a predetermined position; Since the semiconductor devices individually coated with the insulating resin are separated from each other, the respective semiconductor devices are not separated until the final stage. Therefore, the conductive foil may be subjected to each process as one sheet. Workability is improved.

More specifically, the present invention is applied to, for example, a storage element for detecting the remaining amount of ink in an ink jet printer, and the back surface of the conductive foil is in contact with the electrode on the head side of the ink jet printer. In this case, the back surface of the conductive foil (each electrode on the print cartridge side) and the back surface of the insulating resin are formed substantially flat. ) Can reduce the contact stress between both electrodes.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a semiconductor device of the present invention.

FIG. 2 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 6 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 7 is a diagram illustrating a semiconductor device of the present invention.

FIG. 8 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 9 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 10 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 11 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 12 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 13 is a diagram illustrating a semiconductor device of the present invention.

FIG. 14 is a diagram illustrating a semiconductor device of the present invention.

FIG. 15 is a diagram illustrating a method for mounting a semiconductor device of the present invention.

FIG. 16 is a diagram illustrating an application example of a semiconductor device of the present invention.

FIG. 17 is a diagram illustrating an application example of a semiconductor device of the present invention.

FIG. 18 is a diagram illustrating an application example of the present invention and a conventional semiconductor device.

FIG. 19 is a diagram illustrating a mounting structure of a conventional semiconductor device.

FIG. 20 is a diagram illustrating a conventional semiconductor device.

FIG. 21 is a diagram illustrating a conventional method of manufacturing a semiconductor device.

FIG. 22 is a diagram illustrating a conventional method of manufacturing a semiconductor device according to the present invention;

[Explanation of symbols]

 Reference Signs List 50 insulating resin 51A conductive path 51B conductive path 51C conductive path 52A circuit element 52B circuit element 53 semiconductor device 58 eaves 60 conductive foil 61 separation groove 70 conductive film 91 printer main unit 92 control IC 93 print cartridge 94 EEPROM 51a electrode 51b electrode 51c electrode

Continued on the front page (72) Inventor Tsutomu Ogawa 2-5-5 Keihanhondori, Moriguchi-shi, Osaka F-term in SANYO Electric Co., Ltd. 2C056 EA21 EA29 EB20 EB51 HA09 KC05 KC21 KC30 4M109 AA01 CA21 DA09 5F061 AA01 BA01 CA21 CB13 DE04

Claims (27)

[Claims] 1. A semiconductor device comprising: a plurality of electrically separated conductive paths; a circuit element fixed on a desired conductive path; and an insulating resin that covers the circuit element and integrally supports the conductive path. A semiconductor device, wherein a back surface of the conductive path and a back surface of the insulating resin are substantially flattened. 2. A plurality of conductive paths electrically separated by a separation groove, a circuit element fixed on a desired conductive path, and connection means for connecting an electrode of the circuit element to another conductive path. An insulating resin that covers the circuit element and is filled in the separation groove between the conductive paths and exposes only the back surface of the conductive path to integrally support the back surface, and the back surface of the conductive path and the insulating resin And a back surface of the semiconductor device is substantially flattened. 3. The conductive path according to claim 1, wherein the conductive path is formed of any one of copper, aluminum, iron-nickel, copper-aluminum, and aluminum-copper-aluminum. Semiconductor device. 4. The semiconductor device according to claim 1, wherein a conductive film made of a metal material different from that of the conductive path is provided on an upper surface of the conductive path. 5. The semiconductor device according to claim 4, wherein the conductive film is formed by plating with one of nickel, gold, silver, palladium, and aluminum. 6. The semiconductor according to claim 1, wherein the circuit element is formed of any one of a semiconductor bare chip, a chip circuit component, a CSP component, and an SMD component, or a combination thereof. apparatus. 7. The semiconductor device according to claim 2, wherein said connecting means is formed of a thin bonding wire. 8. The data rewriting device side contact electrode, wherein a back surface of the conductive foil is in contact with an electrode on the main body device side and enables rewriting of desired management data in the main body device. Alternatively, the semiconductor device according to claim 2. 9. The ink jet printer according to claim 1, wherein the back surface of the conductive foil is an electrode on a print cartridge which is in contact with an electrode on a head side of the ink jet printer.
2. A semiconductor device according to claim 1. 10. A step of preparing a conductive foil and forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; Fixing a desired circuit element that will constitute each semiconductor device on a plurality of conductive paths; and individually covering each of the semiconductor devices with an insulating resin so as to fill the separation groove; Removing the conductive foil on the side where the separation groove is not provided to a predetermined position to substantially flatten the back surface of the conductive path and the back surface of the insulating resin. Device manufacturing method. 11. A step of preparing a conductive foil and forming a corrosion-resistant conductive film on at least a region serving as a conductive path on the surface of the conductive foil; and applying the conductive film on the conductive foil excluding at least a region serving as a conductive path. Forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil on the mask; and fixing a desired circuit element that will constitute each semiconductor device on the plurality of conductive paths. Individually covering each of the semiconductor devices with an insulating resin so as to be filled in the separation groove; and removing the conductive foil on the side where the separation groove is not provided to a predetermined position to form the conductive path. A method of substantially flattening a back surface and a back surface of the insulating resin. 12. A step of preparing a conductive foil and forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; Fixing a desired circuit element constituting each semiconductor device on the plurality of conductive paths; and forming a connecting means for electrically connecting an electrode of the desired circuit element and the conductive path; A step of individually covering each of the semiconductor devices with an insulating resin so as to be filled in the separation groove; and a step of removing the conductive foil on a side where the separation groove is not provided to a predetermined position to thereby form a back surface of the conductive path. And a step of substantially flattening the back surface of the insulating resin. 13. A step of preparing a conductive foil, forming a corrosion-resistant conductive film on at least a region to be a conductive path on the surface of the conductive foil, and applying the conductive film to the conductive foil excluding at least a region to be a conductive path. Forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil on the mask; and fixing a desired circuit element that will constitute each semiconductor device on the plurality of conductive paths. Forming a connection means for electrically connecting an electrode of the desired circuit element and the conductive path; and individually covering each of the semiconductor devices with an insulating resin so as to fill the separation groove. And removing the conductive foil on the side where the separation groove is not provided to a predetermined position to substantially flatten the back surface of the conductive path and the back surface of the insulating resin. Of semiconductor devices Production method. 14. A step of preparing a conductive foil and forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; Fixing a desired circuit element that will constitute each semiconductor device on a plurality of conductive paths; and individually covering each of the semiconductor devices with an insulating resin so as to fill the separation groove; Removing the conductive foil on the side where the separation groove is not provided to a predetermined position to substantially flatten the back surface of the conductive path and the back surface of the insulating resin, and individually cover with the insulating resin Separating the separated semiconductor devices from each other. 15. A step of preparing a conductive foil, forming a corrosion-resistant conductive film on at least a region to be a conductive path on the surface of the conductive foil, and applying the conductive film to the conductive foil excluding at least a region to be a conductive path. Forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil on the mask; and fixing a desired circuit element that will constitute each semiconductor device on the plurality of conductive paths. Individually covering each of the semiconductor devices with an insulating resin so as to be filled in the separation groove; and removing the conductive foil on the side where the separation groove is not provided to a predetermined position to form the conductive path. Manufacturing a semiconductor device, comprising: a step of substantially flattening a back surface and a back surface of the insulating resin; and a step of separating each semiconductor device individually coated with the insulating resin. Method. 16. A step of preparing a conductive foil and forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; Fixing a desired circuit element constituting each semiconductor device on the plurality of conductive paths; and forming a connecting means for electrically connecting an electrode of the desired circuit element and the conductive path; A step of individually covering each of the semiconductor devices with an insulating resin so as to be filled in the separation groove; and a step of removing the conductive foil on a side where the separation groove is not provided to a predetermined position to thereby form a back surface of the conductive path. And a step of substantially flattening a back surface of the insulating resin, and a step of separating each semiconductor device individually coated with the insulating resin. . 17. A step of preparing a conductive foil, forming a corrosion-resistant conductive film on at least a region to be a conductive path on the surface of the conductive foil, and applying the conductive film to the conductive foil excluding at least a region to be a conductive path. Forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil on the mask; and fixing a desired circuit element that will constitute each semiconductor device on the plurality of conductive paths. Forming a connection means for electrically connecting an electrode of the desired circuit element and the conductive path; and individually covering each of the semiconductor devices with an insulating resin so as to fill the separation groove. Removing the conductive foil on the side where the separation groove is not provided to a predetermined position to substantially flatten the back surface of the conductive path and the back surface of the insulating resin; and Each half individually coated Separating the conductor devices from each other. 18. The conductive foil may be made of copper, aluminum or iron.
18. The method for manufacturing a semiconductor device according to claim 10, wherein the semiconductor device is made of one of nickel, copper-aluminum, and aluminum-copper-aluminum. 19. The method according to claim 11, wherein the conductive film is formed by plating with one of nickel, gold, silver, palladium, and aluminum. Semiconductor device manufacturing method. 20. The semiconductor device according to claim 10, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching. Manufacturing method. 21. The method according to claim 11, wherein the conductive film is used as a part of a mask for forming the separation groove.
Alternatively, the method for manufacturing a semiconductor device according to claim 13, claim 15, or claim 17. 22. The circuit device according to claim 10, wherein the circuit element fixes any one of a semiconductor bare chip, a chip circuit component, a CSP component, and an SMD component, or a combination thereof. A method for manufacturing a semiconductor device. 23. The method of manufacturing a semiconductor device according to claim 12, wherein said connecting means is formed by wire bonding. 24. The method of manufacturing a semiconductor device according to claim 10, wherein said insulating resin is attached by transfer molding. 25. The manufacturing of a semiconductor device according to claim 14, wherein the individual semiconductor devices sealed with the insulating resin are separated by dicing or pressing. Method. 26. The data rewriting device according to claim 10, wherein a back surface of the conductive foil is in contact with an electrode on the main device, and is a contact electrode on the data rewriting device for rewriting desired management data in the main device. A method for manufacturing a semiconductor device according to any one of claims 1 to 17. 27. The printing apparatus according to claim 10, wherein a back surface of the conductive foil is an electrode on a print cartridge which is in contact with an electrode on a head side of the ink jet printer.
8. The method for manufacturing a semiconductor device according to any one of items 7.