JP2002016256A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2002016256A5 JP2002016256A5 JP2000192476A JP2000192476A JP2002016256A5 JP 2002016256 A5 JP2002016256 A5 JP 2002016256A5 JP 2000192476 A JP2000192476 A JP 2000192476A JP 2000192476 A JP2000192476 A JP 2000192476A JP 2002016256 A5 JP2002016256 A5 JP 2002016256A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000192476A JP4573953B2 (ja) | 2000-06-27 | 2000-06-27 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000192476A JP4573953B2 (ja) | 2000-06-27 | 2000-06-27 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002016256A JP2002016256A (ja) | 2002-01-18 |
JP2002016256A5 true JP2002016256A5 (ja) | 2007-08-23 |
JP4573953B2 JP4573953B2 (ja) | 2010-11-04 |
Family
ID=18691604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000192476A Expired - Fee Related JP4573953B2 (ja) | 2000-06-27 | 2000-06-27 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4573953B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4115158B2 (ja) | 2002-04-24 | 2008-07-09 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2003330388A (ja) * | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
CN116216630B (zh) * | 2023-04-28 | 2023-07-21 | 润芯感知科技(南昌)有限公司 | 一种半导体器件及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03248471A (ja) * | 1990-02-26 | 1991-11-06 | Sanyo Electric Co Ltd | 電界効果型トランジスタ |
JP3974229B2 (ja) * | 1997-07-22 | 2007-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6093624A (en) * | 1997-12-23 | 2000-07-25 | Philips Electronics North America Corporation | Method of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuits |
-
2000
- 2000-06-27 JP JP2000192476A patent/JP4573953B2/ja not_active Expired - Fee Related