JP2002016177A - High frequency circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problems that the number of the components of a circuit is increased and the circuit is enlarged since capacitors are required as many as the bias lines. SOLUTION: By using a multi-capacitor composed of a plurality of capacitors, the respective bias lines don't need to be equipped with the capacitors. Thus, the number of the components is reduced and this small-sized high frequency circuit is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit used for a radar device and a communication device using high frequencies such as microwaves and millimeter waves.

[0002]

2. Description of the Related Art FIG. 4 shows an example of a radar device and a communication device using a high-frequency circuit such as a microwave and a millimeter wave. FIG. 4A shows a radar device, and FIG. FIG. 2 is a block diagram of a communication device. In FIG. 4A, 1 is a transceiver, 2 is an antenna, 3 is a target, and 4 is a signal processor. In FIG. 4 (b), 1a and 1b are the first and second
Transceivers, 2a and 2b are first and second antennas,
4a and 4b are first and second signal processors.

Next, the operation of the radar device and the communication device will be described. As shown in FIG. 4A, the radar apparatus generates a high-frequency signal in the transceiver 1 and irradiates the high-frequency signal to the target 3 via the antenna 2. The transceiver 1 receives the high-frequency signal reflected from the target via the antenna 2, and detects a video signal for detecting the target distance, speed, angle, and the like. The signal processor 4 receives the video signal, and derives a target distance, speed, angle, and the like. In this way, the radar device obtains target position information. The communication device generates and modulates a high-frequency signal in the first transceiver 1a based on the signal from the first signal processor 4a as shown in FIG. 4B, and performs modulation via the first antenna 2a. And transmits it to another communication device. This transmission signal is transmitted to the second antenna 2
b, demodulate the signal, and obtain communication information in the second signal processor 4b. In this way, the communication device exchanges information between distant points.

FIG. 5 shows an example of the use status of the radar device. The radar device is mounted in front of a vehicle, and a vehicle, a person, and
This shows a case where an obstacle or the like is detected. In the figure, 5 is a road, 6a and 6b are vehicles passing on the road 5 in the direction of a,
Reference numeral 7 denotes a forward monitoring radar mounted on a vehicle 6b following the vehicle 6a for monitoring the front, 8 denotes an electric pole installed on the roadside of the road 5, or an obstacle such as a parked vehicle parked on the roadside, and 9 denotes a road. A person who is passing or crossing 5.

Next, the use situation will be described. Vehicle 6b
The forward monitoring radar 7 mounted on the vehicle irradiates a high frequency signal to the front, receives reflected waves from the vehicle 6a, the obstacle 8 and the person 9 traveling ahead, and the like, the strength thereof, the frequency shift by the Doppler, and the like. The propagation time of the radio wave is detected, and the distance and the relative speed to the vehicle 6a and the like are obtained from the result, and used for safety measures such as a warning for preventing collision or brake control. In order to spread such radar devices, it is necessary to reduce the size and cost of the radar devices themselves.

[0006] Regarding the use situation of such a system, for example, see IEICE Technical Report MW94-48 (1994-0).
9) It is described in "Development of millimeter-wave application system in Japan" and "All of ITS" by Nihon Keizai Shimbun (P62-67).

FIG. 6 shows a forward monitoring radar 7 shown in FIG.
And a high-frequency circuit used in a communication device using a high frequency, such as a radar device, etc., wherein 10 is a semiconductor including an active element, and 11 is a package having a cavity formed by a dielectric multilayer substrate accommodating the semiconductor. , 12a and 12b are signal lines for transmitting high frequency, 13 is a bias line for transmitting a power or control signal from an external circuit to the semiconductor, 14 is a ground pattern for grounding the semiconductor,
The signal lines 12a and 12b and the bias line 13 are provided on one surface of the package 11, and the ground pattern 14 is provided on the other surface of the package 11. Reference numeral 15 denotes a plurality of capacitors provided adjacent to the semiconductor element 10 in the cavity of the package 11, and reference numeral 16 denotes a bonding wire. Semiconductor 10 is package 1
1 and is grounded by the ground pattern 14. The semiconductor 10 and the signal lines 12 a and 12 b are electrically connected by a bonding wire 16, and the semiconductor 10 and the bias line 13 are electrically connected by a bonding wire 16 via an upper electrode of the capacitor 15. The lower electrode of the capacitor 15 is grounded to the ground pattern 14 by soldering.

Next, the operation will be described. In FIG. 6, a high-frequency circuit performs amplification, frequency modulation, frequency multiplication, signal oscillation, and the like of an input signal from one or more signal lines 12a by a semiconductor 10, and performs one operation. The above signal line 12
b to output a signal. The bias line 13 receives a power supply, a control signal, or both, and the semiconductor 10
To excite, control, or both. The capacitor 15 short-circuits high-frequency components, reduces leakage of microwaves and millimeter waves from the bias line, and suppresses unnecessary oscillation due to a loop formed by the bias line.

[0009]

When a large number of bias lines are required in such a high-frequency circuit as described above, capacitors are required by the number of the bias lines. Therefore, there has been a problem that the number of components increases and it takes time to mount.

When the electrode of the capacitor component is grounded to the ground pattern using solder, the capacitor component is moved up and down, left and right, respectively, so that no gap is formed between the ground plane of the component and the ground pattern. Grounding while not touching. For this reason, it is necessary to mount a capacitor component with a space for moving it up and down, left and right, and when the number of components increases, the area required for component grounding increases, and there is a problem that the high-frequency circuit becomes large.

At a relatively high frequency such as the millimeter-wave band, unless the size of the capacitor is reduced, it becomes difficult to obtain a function of short-circuiting high-frequency components, and unnecessary oscillation is caused by a loop formed by the bias line. There were issues that occurred.

In addition, there has been a problem that the downsizing of the capacitor makes mounting difficult and increases the manufacturing cost.

The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a high-frequency circuit which is small in size, easy to mount, and does not cause unnecessary oscillation due to a loop formed by a bias line.

[0014]

A high-frequency circuit according to a first aspect of the present invention includes a semiconductor including an active element, a package containing the semiconductor, a signal line for transmitting a high-frequency signal, and a power supply or control signal supplied from an external circuit to the semiconductor. It is provided with a bias line for transmission, a ground pattern for grounding the semiconductor, and a multiple capacitor composed of a plurality of capacitors.

A high-frequency circuit according to a second aspect of the present invention includes a semiconductor including an active element, a package containing the semiconductor,
A signal line for transmitting a high-frequency signal, a bias line for transmitting a power supply or a control signal from an external circuit to the semiconductor, a ground pattern for grounding the semiconductor, and a multiple capacitor comprising a plurality of capacitors having a resistance film provided on an electrode plane. It is provided.

Further, a high-frequency circuit according to a third aspect of the present invention includes a semiconductor including an active element, a package containing the semiconductor,
It includes a signal line for transmitting a high-frequency signal, a bias line for transmitting a power supply or a control signal from an external circuit to the semiconductor, a ground pattern for grounding the semiconductor, and a capacitor formed integrally with the package.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a diagram showing a high-frequency circuit according to Embodiment 1 of the present invention, in which 10, 11, 12a, 12b, 13, 14, and 16 are the same as those shown in FIG. Reference numeral 17 denotes a multiple capacitor composed of a plurality of capacitors. For example, a plurality of capacitors are constituted by one capacitor component (member).
The semiconductor 10 is placed in the cavity of the package 11,
Grounded by the ground pattern 14. The semiconductor 10 and the signal lines 12a and 12b are
6, the semiconductor 10 and the bias line 13 are electrically connected by the bonding wire 16 via the multiple capacitor 17. Also multiple capacitors 1
7 is grounded to the ground pattern 17 in the same manner as in the prior art.

Next, the operation will be described. In FIG. 1, the high-frequency circuit performs amplification, frequency modulation, frequency multiplication, signal oscillation and the like on the input signal from one or more signal lines 12a by the semiconductor 10. The above signal line 12
b to output a signal. The bias line 13 receives a power supply, a control signal, or both, and the semiconductor 10
To excite, control, or both. The multiple capacitor 17 short-circuits high-frequency components, reduces leakage of microwaves and millimeter waves from the bias line,
Unnecessary oscillation due to the loop formed by the bias line is suppressed. As described above, by using the multiple capacitors in the high-frequency circuit, it is not necessary to load a capacitor for each bias line, so that the number of components can be reduced. Also,
As a result, the area required for component grounding is reduced, and the high-frequency circuit can be downsized.

Embodiment 2 FIG. 2 shows a high-frequency circuit according to Embodiment 2 of the present invention. In FIG. 2, reference numeral 18 denotes a multiple capacitor composed of a plurality of capacitors each provided with a resistive film on an electrode plane. The semiconductor 10 is arranged in a package 11 and is grounded by a ground pattern 14. Also,
The semiconductor 10 and the signal lines 12a and 12b are electrically connected by a bonding wire 16, and the semiconductor 10 and the bias line 13 are electrically connected by the bonding wire 16 via a multiple capacitor 18 having a resistive film on an electrode plane. You.

Next, the operation will be described. In FIG. 2, the high-frequency circuit performs amplification, frequency modulation, frequency multiplication, signal oscillation, and the like on an input signal from one or more signal lines 12a by the semiconductor 10, and performs one operation. The above signal line 12
b to output a signal. The bias line 13 receives a power supply, a control signal, or both, and the semiconductor 10
To excite, control, or both. The multiple capacitor 18 having a resistive film on the electrode plane short-circuits high-frequency components, reduces leakage of microwaves and millimeter waves from the bias line, and suppresses unnecessary oscillation due to the loop formed by the bias line. I do. As described above, by using the multiple capacitors in the high-frequency circuit, it is not necessary to load a capacitor for each bias line, so that the number of components can be reduced. In addition, since the area required for component grounding is reduced, the size of the high-frequency circuit can be reduced. The high frequency flows on the surface of the conductor due to the skin effect. Therefore, by providing a resistive film on the electrode plane, it is possible to attenuate only high frequencies without attenuating DC and low frequencies, thereby increasing the effect of suppressing unnecessary oscillations due to the loop formed by the bias line.

Embodiment 3 FIG. 3 shows a high-frequency circuit according to Embodiment 3 of the present invention. In FIG. 3, reference numeral 10 denotes a semiconductor including an active element, 11 denotes a package formed of a dielectric multilayer substrate containing the semiconductor, and 12a and 12b transmit high-frequency signals. A signal line for transmission; 13, a bias line for transmitting a power supply or a control signal from an external circuit to the semiconductor; 14, a ground pattern for grounding the semiconductor; 19, one or a plurality of multi-layer substrates forming a package; A capacitor 16 having a higher dielectric constant than the dielectric substrate and having an electrode plane added on the uppermost dielectric substrate to be integrally formed with the package is a bonding wire. The semiconductor 10 is arranged in a package 11 and is grounded by a ground pattern 14. In addition, semiconductor 10
And the signal lines 12a and 12b are electrically connected by bonding wires 16, and the semiconductor 10 and the bias lines 13
Are electrically connected by a bonding wire 16 via a capacitor 19 formed integrally with the package.

Next, the operation will be described. In FIG. 3, the high-frequency circuit performs amplification, frequency modulation, frequency multiplication, signal oscillation, and the like on an input signal from one or more signal lines 12a by the semiconductor 10, and performs one operation. The above signal line 12
b to output a signal. The bias line 13 receives a power supply, a control signal, or both, and the semiconductor 10
To excite, control, or both. The capacitor 19 formed integrally with the package short-circuits high-frequency components, reduces leakage of microwaves and millimeter waves from the bias line, and suppresses unnecessary oscillation due to a loop formed by the bias line. As described above, the number of components can be reduced by using a capacitor integrated with a package in a high-frequency circuit. Further, this eliminates the need for a space for moving the component up and down and left and right when the component is grounded, so that the high-frequency circuit can be downsized. Further, since there is no need to mount a capacitor, manufacturing costs can be reduced. In addition, variations in performance due to mounting can be suppressed.

[0023]

According to the first aspect of the present invention, in the high-frequency circuit, since multiple capacitors are used, it is not necessary to load a capacitor for each bias line, so that the number of parts can be reduced, and further, the parts are grounded. Therefore, a small high-frequency circuit can be obtained.

According to the second aspect of the present invention, in the high-frequency circuit, by using a multiple capacitor in which a resistance film is added to an electrode plane, it is not necessary to load a capacitor for each bias line, thereby reducing the number of components. Can be. Furthermore, since the area required for component grounding is reduced, the size of the high-frequency circuit can be reduced. In addition, since high frequency flows on the surface of the conductor due to the skin effect, by providing a resistive film on the electrode plane, direct current and low frequency are not attenuated, but only high frequency can be attenuated. Therefore, it is possible to obtain a small high-frequency circuit that suppresses unnecessary oscillation due to a loop formed by the bias line.

According to the third aspect, the number of components can be reduced by using the capacitor integrally formed in the package in the high frequency circuit. Further, this eliminates the need for a space for moving the component up and down and left and right when the component is grounded, so that the high-frequency circuit can be downsized. Furthermore, since there is no need to mount a capacitor, a high-frequency circuit with low performance variation and low cost can be obtained.

[Brief description of the drawings]

FIG. 1 is a diagram showing Embodiment 1 of a high-frequency circuit according to the present invention.

FIG. 2 is a diagram showing a high-frequency circuit according to a second embodiment of the present invention;

FIG. 3 is a diagram showing a third embodiment of the high-frequency circuit according to the present invention;

FIG. 4 is a diagram illustrating an example of an apparatus using a high-frequency circuit.

FIG. 5 is a diagram illustrating an example of a use situation of a device using a high-frequency circuit.

FIG. 6 is a diagram showing a conventional high-frequency circuit.

[Explanation of symbols]

1 transceiver, 1a first transceiver, 1b second transceiver, 2 antennas, 2a first antenna, 2b second
Antenna, 3 targets, 4 signal processors, 4a first signal processor, 4b second signal processor, 5 roads, 6a first vehicle, 6b second vehicle, 7 forward-looking radar, 8
Obstacles, 9 humans, 10 semiconductors, 11 packages, 1
2a first signal line, 12b second signal line, 13
Bias line, 14 ground pattern, 15 capacitor, 16 bonding wire, 17 multiple capacitor,
18 multiple capacitors, 19 capacitors

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[Procedure amendment]

[Submission date] July 27, 2001 (2001.7.2)
7)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0004

[Correction method] Change

[Correction contents]

FIG. 5 shows an example of a use situation of a radar apparatus. The radar apparatus is mounted in front of a vehicle.
This shows a case where an obstacle or the like is detected. In the figure, 5 is a road, 6a and 6b are vehicles passing on the road 5 in the direction of a,
Reference numeral 7 denotes a forward monitoring radar mounted on a following vehicle 6b of the vehicle 6a for monitoring the front, 8 denotes an electric pole installed on the roadside of the road 5, or an obstacle such as a parked vehicle parked on the roadside, and 9 denotes a road 5 A person who is passing or crossing.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0005

[Correction method] Change

[Correction contents]

Next, the use situation will be described. Vehicle 6b
The forward monitoring radar 7 mounted on the vehicle irradiates a high frequency signal to the front, receives reflected waves from the vehicle 6a, the obstacle 8 and the person 9 traveling ahead, and the strength, frequency shift by Doppler and radio wave. Is detected, and the distance and relative speed to the vehicle 6a and the like are determined from the result, and are used for safety measures such as warning for collision prevention or brake control. In order to spread such radar devices, it is necessary to reduce the size and cost of the radar devices themselves.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0016

[Correction method] Change

[Correction contents]

Further, a high-frequency circuit according to a third aspect of the present invention includes a semiconductor including an active element, a package containing the semiconductor,
It includes a signal line for transmitting a high-frequency signal, a bias line for transmitting a power supply or a control signal from an external circuit to the semiconductor, a ground pattern for grounding the semiconductor, and a capacitor formed integrally with the package. Also, the fourth
A high-frequency circuit according to the present invention includes a semiconductor including an active element and a semiconductor.
Package that contains conductors and signals that transmit high-frequency signals
Transmission of power or control signals from external circuits to lines and semiconductors
Bias line to send, and ground pattern to ground the semiconductor
And a plurality of capacitors with a resistive film on the electrode plane
With a capacitor integrated into a package consisting of
It is a thing.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0025

[Correction method] Change

[Correction contents]

According to the third aspect, the number of components can be reduced by using the capacitor integrally formed in the package in the high frequency circuit. Further, this eliminates the need for a space for moving the component up and down and left and right when the component is grounded, so that the high-frequency circuit can be downsized. Furthermore, since there is no need to mount a capacitor, a high-frequency circuit with low performance variation and low cost can be obtained. Ma
According to the fourth invention, in the high-frequency circuit, the electrode flat
Integrated into a package with a resistive film
By using a capacitor, the capacity of each bias line
It is not necessary to load
it can. Furthermore, the area required for component grounding has been reduced.
Therefore, the high-frequency circuit can be downsized. In addition, high frequency is skin effect
Flow through the surface of the conductor due to the
By applying, direct current and low frequency are not attenuated,
Only the frequency can be attenuated. Therefore, it is small,
Suppresses unnecessary oscillation due to the loop formed by the bias line
High frequency circuit can be obtained.

Claims (3)

[Claims] A semiconductor including an active element; a package accommodating the semiconductor; a signal line transmitting a high-frequency signal; a bias line transmitting a power supply or a control signal to the semiconductor from an external circuit; A high-frequency circuit, comprising: a ground pattern to be formed; and a multiple capacitor including a plurality of capacitors, wherein the semiconductor portion and the bias line are connected by a bonding wire, a ribbon, or the like via the multiple capacitor. 2. The high-frequency circuit according to claim 1, wherein a resistance film is provided on an electrode plane of the multiple capacitor. 3. A semiconductor including an active element, a package containing the semiconductor, a signal line transmitting a high-frequency signal, a bias line transmitting a power supply or a control signal from an external circuit to the semiconductor, and grounding the semiconductor. And a capacitor integrally formed on the package, and the semiconductor part and the bias line are
A high-frequency circuit, wherein the high-frequency circuit is connected with a bonding wire or a ribbon via a capacitor integrally formed with the package.