JP2000082926A - High frequency circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the area of a semiconductor part and to reduce the cost by providing a semiconductor part and first and second connection lines connecting first and second outer substrates. SOLUTION: DC voltage is applied to first and second bias circuits 16a and 16b contained in first and second outer substrates 20a and 20b, supplied to an active element 11 through first and second connection lines 19a and 19b and the active element 11 is excited. First and second series lines 17a and 17b move the input/output impedance of a semiconductor part 18 to high one. The first and second connection lines 19a and 19b are connected to the first and second series lines 17a and 17b contained in the semiconductor part 18 and the first and second outer substrates 20a and 20b. Input side/output side matching circuits 14 and 15 receive the input/output impedance of the semiconductor part 18 through the first and second connection lines 19a and 19b and match impedance with the other circuits connected to an input terminal 12 and an output terminal 13.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit used for a radar device and a communication device using high frequencies such as microwaves and millimeter waves.

[0002]

2. Description of the Related Art FIG. 9 shows an example of a radar device and a communication device using a high frequency circuit such as a microwave and a millimeter wave. FIG. 9A shows a radar device, and FIG. 9B shows a communication device. is there. In FIG. 9A, 1 is a transceiver, 2 is an antenna, 3 is a target, and 4 is a signal processor. In FIG. 9 (b), 1a and 1b are first and second transceivers, 2a and 2b are first and second antennas, and 4a and 4b are first antennas.
And a second signal processor.

Next, the operation of the radar device and the communication device will be described. The radar device generates a high-frequency signal in the transceiver 1 as shown in FIG. 9A and irradiates the high-frequency signal to the target 3 via the antenna 2. The transceiver 1 receives the high-frequency signal reflected from the target via the antenna 2, and detects a video signal for detecting the target distance, speed, angle, and the like. The signal processor 4 receives the video signal, and derives a target distance, speed, angle, and the like. In this way, the radar device obtains target position information. The communication device generates and modulates a high-frequency signal in the first transceiver 1a based on the signal from the first signal processor 4a as shown in FIG. 9B, and modulates the signal via the first antenna 2a. And transmits it to another communication device. This transmission signal is transmitted to the second antenna 2b.
, And demodulates the signal to obtain a second signal processor 4
In b, communication information is obtained. In this way, the communication device exchanges information between distant points.

FIG. 10 shows an example of a use situation of a radar apparatus, which is mounted in front of a vehicle and detects a vehicle, a person, an obstacle, and the like in front of the vehicle. In the figure, 5 is a road,
6a and 6b are vehicles traveling on the road 5 in the direction of a, 7 is a forward monitoring radar mounted on a succeeding vehicle 6b of the vehicle 6a for monitoring the front, 8 is a telephone pole installed on the roadside of the road 5 or a roadside. An obstacle 9 such as a parked on-street parked vehicle is a person passing or crossing the road 5.

Next, the use situation will be described. Vehicle 6
The forward monitoring radar 7 mounted on the vehicle b emits a high-frequency signal forward, receives reflected waves from the vehicle 6a, obstacles 8 and humans 9 traveling ahead, and adjusts the strength and frequency of the reflected waves by Doppler. The shift and the propagation time of the radio wave are detected, and the distance and the relative speed to the vehicle 6a and the like are obtained from the results, and are used for safety measures such as an alarm for preventing collision or brake control. In order to spread such a radar apparatus, it is necessary to provide the radar apparatus at a low price.

[0006] Regarding the use situation of such a system, for example, see IEICE Technical Report MW94-48 (1994-0).
9) It is described in "Development of millimeter-wave application system in Japan" and "All of ITS" by Nihon Keizai Shimbun (P62-67).

FIG. 11 shows a high-frequency circuit used in a radar device such as the forward-looking radar 7 in FIG. 10 and a communication device using a high frequency.
(Monolithic microwave IC), 11 is FET, HE
MT, active elements such as diodes, 12 is an input terminal, 13
Is an output terminal, 14 is an input-side matching circuit of the active element 11, 1
5 is an output side matching circuit of the active element 11, 16a and 16b
Are first and second bias circuits for the active element 11.

Next, the operation will be described. In FIG. 11, an MMIC 10 amplifies an input signal from one or more input terminals 12 by an active element 11, performs frequency modulation, frequency multiplication, oscillates a signal, and the like, and outputs a signal from an output terminal 13. Among them, the first bias circuit 16a and the second bias circuit 16b apply a DC voltage to excite the active element 11. The input matching circuit 14 and the output matching circuit 15 match the input / output impedance of the MMIC 10 with the impedance of another circuit (not shown in the figure) connected to the input terminal 12 and the output terminal 13 so that the input side and the output side are matched. Impedance matching.

The MMIC 10 is a semiconductor (for example, GaAs).
s: gallium arsenide, Si: silicon, etc.), and the price greatly depends on the area of the MMIC 10, that is, the area of the semiconductor portion, and greatly affects the price of the entire system such as a radar device and a communication device. . In the conventional configuration, since the area of the semiconductor portion is large and the entire system such as the radar device and the communication device becomes expensive, the reduction of the price has been an important issue in the development.

[0010]

In the above-described high-frequency circuit, there is a problem that the area of the semiconductor portion forming the MMIC is large, and the system such as the radar device and the communication device becomes expensive.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and the matching circuit and the bias circuit in the MMIC are moved to an external inexpensive external substrate so that the area of the semiconductor portion is reduced and the high-frequency circuit is reduced. It is an object of the present invention to reduce the prices of radar devices, communication devices, and the like.

[0012]

According to a first aspect of the present invention, there is provided a high-frequency circuit comprising: a semiconductor portion including an active element and a series line connected to each terminal; an input terminal; an input-side matching circuit;
A first external substrate including a first bias circuit, a second external substrate including an output terminal, an output-side matching circuit, and a second bias circuit; and a semiconductor portion connected to the first and second external substrates. And first and second connection lines.

A high-frequency circuit according to a second aspect of the present invention is a high-frequency circuit comprising a semiconductor portion including an active element, a series line connected to each terminal thereof, and an open stub; an input terminal; an input-side matching circuit; A first external substrate including an output terminal, an output-side matching circuit, and a second bias circuit; a first external substrate including a semiconductor portion and the first and second external substrates; And a second connection line.

Further, the high-frequency circuit according to the third aspect of the present invention includes a semiconductor portion including an active element, a series line connected to each terminal thereof, and a short stub, an input terminal, an input side matching circuit, a first bias circuit, A first external substrate including an output terminal, an output-side matching circuit, and a second bias circuit; a first external substrate including a semiconductor portion and the first and second external substrates; And a second connection line.

A high-frequency circuit according to a fourth aspect of the present invention is a semiconductor device including an active element, a series line connected to each terminal of the active element, and two bias extraction lines to the active element, an input terminal and an input-side matching circuit. A first external substrate including an output terminal and an output-side matching circuit;
And a third external substrate including the first and second bias circuits, and first, second, third, and fourth connection lines that connect the semiconductor portion to the first, second, and third external substrates. Equipped.

Further, a high-frequency circuit according to a fifth aspect of the present invention is a high-frequency circuit including a semiconductor portion including an active element and input-side and output-side matching circuits connected to each terminal thereof, and an input terminal and a first bias circuit. A first external substrate, a second external substrate including an output terminal and a second bias circuit, a semiconductor portion, and a first external substrate.
And a first and a second connection line connecting the first and second external substrates.

A high frequency circuit according to a sixth aspect of the present invention is a semiconductor device including an active element, input and output matching circuits connected to respective terminals thereof, two bias extraction lines to the active element, and an input / output terminal. And an external substrate including first and second bias circuits, and first and second connection lines connecting the semiconductor portion and the external substrate.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a block diagram of a high-frequency circuit according to Embodiment 1 of the present invention.
In the figure, 11 is an active element such as a FET, HEMT, diode, etc., 12 is an input terminal, 13 is an output terminal, 14 is an input side matching circuit, 15 is an output side matching circuit, 16a and 16b.
Are first and second bias circuits, 17a and 17b are first and second series lines, 18 is a semiconductor portion including the active element 11, the first series line 17a and the second series line 17b, 19a and 19b is the first and second connection lines, 20
a is a first external substrate including the input terminal 12, the input side matching circuit 14, and the first bias circuit 16a, and 20b is the output terminal 13, the output side matching circuit 15, and the second bias circuit 16a.
b.

FIG. 2 shows an example of the input / output impedance of the high-frequency circuit according to the first embodiment of the present invention. In FIG.
Curves b and c show the input / output impedance of each terminal of the semiconductor portion 18.

Next, functions and operations will be described. FIG.
, The high-frequency circuit has a function of amplifying, frequency modulating, frequency multiplying, oscillating a signal, and the like on an input signal from an input terminal 12 by an active element 11 and outputting a signal from an output terminal 13. The first external substrate 20a and the second
Of the first bias circuit 16a included in the external substrate 20b of FIG.
And the second bias circuit 16b applies a DC voltage,
The active element 11 is supplied via the first connection line 19a and the second connection line 19b to excite the active element 11.
The first series line 17a and the second series line 17b shift the input / output impedance of the semiconductor portion 18 to a high impedance. The first connection line 19a and the second connection line 19b include a first series line 17a and a second series line 17b included in the semiconductor portion 18, a first external substrate 20a and a second external substrate 20b, respectively. Make the connection. The input side matching circuit 14 and the output side matching circuit 15 receive the input / output impedance of the semiconductor portion 18 via the first connection line 19a and the second connection line 19b, and
2 and other circuits connected to the output terminal 13 (omitted in the figure). As described above, the input-side matching circuit 14, the output-side matching circuit 15, the first bias circuit 16a, and the second bias circuit 16b are connected to inexpensive external substrates (the first external substrate 20a and the second external substrate 20).
By moving to b), the area of the semiconductor portion 18 can be reduced, the cost of the high-frequency circuit can be reduced, and the price of the entire system such as the radar device and the communication device can be reduced.

Next, the input / output impedance shown in FIG. 2 will be described. An example of the input / output impedance of the active element 11 on the Smith chart is a curve a, which has a low impedance depending on the frequency band used (for example, the frequency band at the point a). Also, the active element 11
An example of the input / output impedance in the case where the first series line 17a and the second series line 17b are connected to each other is a curve b and a curve c, respectively, where the impedance shifts to high impedance (point a is point b or point b). c). Further, a line such as a gold wire or a gold ribbon is generally used for the first connection line 19a and the second connection line 19b, and the characteristic impedance between the substrates to be connected is high. Therefore, the first series line 17a
And the transfer of the input / output impedance by the second series line 17b, the semiconductor portion 18 and the first external substrate 20a
The connection between the second external board 20b and the second external board 20b is performed between high impedances, so that transmission loss and reflection loss in the first connection line 19a and the second connection line 19b can be reduced. The effect can be reduced.

Embodiment 2 FIG. FIG. 3 is a block diagram of a high-frequency circuit showing a second embodiment of the present invention. In FIG. 3, reference numeral 11 denotes an active element such as an FET, a HEMT, and a diode;
12 is an input terminal, 13 is an output terminal, 14 is an input-side matching circuit, 15 is an output-side matching circuit, 16a and 16b are first and second bias circuits, 17a and 17b are first and second series lines, Reference numeral 18 denotes the active element 11 and the first series line 1
7a, the second series line 17b, and the first open stub 2
1a and a semiconductor portion including a second open stub 21b; 19a and 19b are first and second connection lines;
a is a first external substrate including the input terminal 12, the input side matching circuit 14, and the first bias circuit 16a, and 20b is the output terminal 13, the output side matching circuit 15, and the second bias circuit 16a.
b and the second external substrates 21a and 21b are first and second open stubs.

Next, functions and operations will be described. FIG.
, The high-frequency circuit has a function of amplifying, frequency modulating, frequency multiplying, oscillating a signal, and the like on an input signal from an input terminal 12 by an active element 11 and outputting a signal from an output terminal 13. The first external substrate 20a and the second
Of the first bias circuit 16a included in the external substrate 20b of FIG.
And the second bias circuit 16b applies a DC voltage,
The active element 11 is supplied via the first connection line 19a and the second connection line 19b to excite the active element 11.
First series line 17a, second series line 17b, first open stub 21a, and second open stub 21b
Shifts the input / output impedance of the semiconductor portion 18 to a high impedance. The first connection line 19a and the second connection line 19a
Connection line 19b connects the first series line 17a and the second series line 17b included in the semiconductor portion to the first external substrate 20a and the second external substrate 20b. The input side matching circuit 14 and the output side matching circuit 15 receive the input / output impedance of the semiconductor portion 18 through the first connection line 19a and the second connection line 19b, and are connected to the input terminal 12 and the output terminal 13. Impedance matching with another circuit (omitted in the figure). As described above, the input-side matching circuit 14, the output-side matching circuit 15, the first bias circuit 16a, and the second bias circuit 16b are connected to inexpensive external substrates (the first external substrate 20a and the second external substrate 20).
By moving to b), the area of the semiconductor portion 18 can be reduced, the cost of the high-frequency circuit can be reduced, and the price of the entire system such as the radar device and the communication device can be reduced. Also, the semiconductor part 1
8, the first connection line 19a and the second connection line 1
9b can reduce transmission loss, reflection loss, and the like, and can reduce the influence of these connection lines.

Embodiment 3 FIG. FIG. 4 is a block diagram of a high-frequency circuit according to Embodiment 3 of the present invention. In FIG. 4, reference numeral 11 denotes an active element such as an FET, a HEMT, and a diode;
12 is an input terminal, 13 is an output terminal, 14 is an input-side matching circuit, 15 is an output-side matching circuit, 16a and 16b are first and second bias circuits, 17a and 17b are first and second series lines, Reference numeral 18 denotes the active element 11 and the first series line 1
7a, the second series line 17b and the first short stub 2
2a and a semiconductor portion including a second short stub 22b; 19a and 19b are first and second connection lines;
a is a first external substrate including the input terminal 12, the input side matching circuit 14, and the first bias circuit 16a, and 20b is the output terminal 13, the output side matching circuit 15, and the second bias circuit 16a.
b, and the second external substrates 22a and 22b are first and second short stubs.

Next, functions and operations will be described. FIG.
, The high-frequency circuit has a function of amplifying, frequency modulating, frequency multiplying, oscillating a signal, and the like on an input signal from an input terminal 12 by an active element 11 and outputting a signal from an output terminal 13. The first external substrate 20a and the second
Of the first bias circuit 16a included in the external substrate 20b
And the second bias circuit 16b applies a DC voltage,
The active element 11 is supplied via the first connection line 19a and the second connection line 19b to excite the active element 11.
First series line 17a, second series line 17b, first short stub 22a, and second short stub 22b
Shifts the input / output impedance of the semiconductor portion 18 to a high impedance. The first connection line 19a and the second connection line 19a
Connection line 19b connects the first series line 17a and the second series line 17b included in the semiconductor portion to the first external substrate 20a and the second external substrate 20b. The input side matching circuit 14 and the output side matching circuit 15 receive the input / output impedance of the semiconductor portion 18 through the first connection line 19a and the second connection line 19b, and are connected to the input terminal 12 and the output terminal 13. Impedance matching with another circuit (omitted in the figure). As described above, the input-side matching circuit 14, the output-side matching circuit 15, the first bias circuit 16a, and the second bias circuit 16b are connected to inexpensive external substrates (the first external substrate 20a and the second external substrate 20).
By moving to b), the area of the semiconductor portion 18 can be reduced, the cost of the high-frequency circuit can be reduced, and the price of the entire system such as the radar device and the communication device can be reduced. Also, the semiconductor part 1
8, the first connection line 19a and the second connection line 1
9b can reduce transmission loss, reflection loss, and the like, and can reduce the influence of these connection lines.

Embodiment 4 FIG. 5 is a block diagram of a high-frequency circuit according to a fourth embodiment of the present invention. In FIG. 5, reference numeral 11 denotes an active element such as an FET, a HEMT, and a diode;
12 is an input terminal, 13 is an output terminal, 14 is an input-side matching circuit, 15 is an output-side matching circuit, 16a and 16b are first and second bias circuits, 17a and 17b are first and second series lines, Reference numeral 18 denotes the active element 11 and the first series line 1
The semiconductor portions 19a, 19b, 19c and 19d including the first and second series lines 17a, 17b, the first bias extraction line 23a and the second bias extraction line 23b are the first, second, third and fourth semiconductor portions. Connection line, 20a is a first external substrate including input terminal 12 and input side matching circuit 14, 20b is second external substrate including output terminal 13 and output side matching circuit 15, 20c is first bias circuit A third external substrate including a first bias circuit 16a and a second bias circuit 16b;
Reference numeral 3b denotes first and second bias extraction lines.

Next, functions and operations will be described. FIG.
, The high-frequency circuit has a function of amplifying, frequency modulating, frequency multiplying, oscillating a signal, and the like on an input signal from an input terminal 12 by an active element 11 and outputting a signal from an output terminal 13. The first bias circuit 16a and the second bias circuit 1 included in the third external substrate 20c
6b applies a DC voltage to the active element 11 via the third connection line 19c, the fourth connection line 19d, the first bias extraction line 23a, and the second bias extraction line 23b.
To excite the active element 11. The first series line 17a and the second series line 17b shift the input / output impedance of the semiconductor portion 18 to a high impedance. First connection line 19a and second connection line 19b
Connects the first serial line 17a and the second serial line 17b included in the semiconductor portion 18 to the first external substrate 20a and the second external substrate 20b. The input side matching circuit 14 and the output side matching circuit 15 are connected to the first connection line 19a.
The input / output impedance of the semiconductor portion 18 is received via the second connection line 19b, and impedance matching with another circuit (not shown in the figure) connected to the input terminal 12 and the output terminal 13 is performed. Thus, the input side matching circuit 14, the output side matching circuit 15, the first bias circuit 16a
And the second bias circuit 16b is connected to an inexpensive external substrate (first
Of the semiconductor portion 18 by moving to the external substrate 20a, the second external substrate 20b, and the third external substrate 20c).
Can be reduced, the price of the high-frequency circuit can be reduced, and the price of the entire system such as the radar device and the communication device can be reduced. Further, by setting the input / output impedance of the semiconductor portion 18 to a high impedance, transmission loss, reflection loss, and the like in the first connection line 19a and the second connection line 19b can be reduced, and the influence of these connection lines can be reduced. . Further, depending on the characteristics of the active element 11, by disposing each bias line near the active element 11, that is, by providing a bias extraction line in the semiconductor portion and disposing it near the active element 11, high frequency It is possible to improve the gain, output level, stability coefficient and the like of the circuit.

Embodiment 5 FIG. 6 is a block diagram of a high-frequency circuit showing a fifth embodiment of the present invention. In FIG. 6, reference numeral 11 denotes an active element such as an FET, a HEMT, and a diode;
12 is an input terminal, 13 is an output terminal, 14 is an input matching circuit, 15 is an output matching circuit, 16a and 16b are first and second bias circuits, 18 is an active element 11, an input matching circuit 14 and an output. A semiconductor portion including the side matching circuit 15;
19a and 19b are first and second connection lines, and 20a is a first connection line including the input terminal 12 and the first bias circuit 16a.
Reference numeral 20b denotes a second external substrate including the output terminal 13 and the second bias circuit 16b.

FIG. 7 shows an example of the input / output impedance of the high-frequency circuit according to the fifth embodiment of the present invention. In FIG.
A curve b indicates the input / output impedance of each terminal of the semiconductor portion 18.

Next, functions and operations will be described. FIG.
, The high-frequency circuit has a function of amplifying, frequency modulating, frequency multiplying, oscillating a signal, and the like on an input signal from an input terminal 12 by an active element 11 and outputting a signal from an output terminal 13. The first external substrate 20a and the second
Of the first bias circuit 16a included in the external substrate 20b of FIG.
And the second bias circuit 16b applies a DC voltage,
The active element 11 is supplied to the active element 11 via the first connection line 19a and the second connection line 19b to excite the active element 11. The input-side matching circuit 14 and the output-side matching circuit 15 receive the input / output impedance of the active element 11 and perform impedance matching with another circuit (omitted in the drawing) connected to the input terminal 12 and the output terminal 13. In other words, the point a of the curve a in FIG. 7 is shifted to the point b of the curve b.
The first connection line 19a and the second connection line 19b connect the semiconductor portion 18 to the first external substrate 20a and the second external substrate 20b. As described above, the first bias circuit 16a and the second bias circuit 16b are connected to inexpensive external substrates (the first external substrate 20a and the second external substrate 20a).
By moving to b), the area of the semiconductor portion 18 can be reduced, the cost of the high-frequency circuit can be reduced, and the price of the entire system such as the radar device and the communication device can be reduced. Also, the active element 11
By making the distance from the input side matching circuit 14 and the output side matching circuit 15 shorter, the frequency band for impedance matching can be widened.

Embodiment 6 FIG. FIG. 8 is a block diagram of a high-frequency circuit according to Embodiment 6 of the present invention. In FIG. 8, reference numeral 11 denotes an active element such as an FET, a HEMT, and a diode;
12 is an input terminal, 13 is an output terminal, 14 is an input-side matching circuit, 15 is an output-side matching circuit, 16a and 16b are first and second bias circuits, 18 is an active element 11, an input terminal 12, and an output terminal 13. Semiconductor portions 19a and 1 including an input-side matching circuit 14, an output-side matching circuit 15, a first bias extraction line 23a, and a second bias extraction line 23b.
9b is a first and second connection line, 20 is a first external substrate including a first bias circuit 16a and a second bias circuit 16b, and 23a and 23b are first and second bias extraction lines. .

Next, functions and operations will be described. FIG.
, The high-frequency circuit has a function of amplifying, frequency modulating, frequency multiplying, oscillating a signal, and the like on an input signal from an input terminal 12 by an active element 11 and outputting a signal from an output terminal 13. The first bias circuit 16a and the second bias circuit 16b included in the external substrate 20 are:
A DC voltage is applied and supplied to the active element 11 via the first connection line 19a, the second connection line 19b, the first bias extraction line 23a, and the second bias extraction line 23b to excite the active element 11. Let it. The input-side matching circuit 14 and the output-side matching circuit 15 receive the input / output impedance of the active element 11 and perform impedance matching with another circuit (omitted in the drawing) connected to the input terminal 12 and the output terminal 13. First connection line 19a and second connection line 1
9 b connects the semiconductor portion 18 to the external substrate 20. As described above, the first bias circuit 16a and the second bias circuit 16b are connected to an inexpensive external substrate (external substrate 20).
Thus, the area of the semiconductor portion 18 can be reduced, the cost of the high-frequency circuit can be reduced, and the price of the entire system such as the radar device and the communication device can be reduced. Further, by shortening the distance from the active element 11 to the input-side matching circuit 14 and the output-side matching circuit 15, it is possible to widen the frequency band for impedance matching. Further, depending on the characteristics of the active element 11, each bias line is connected to the active element 1
1, that is, by providing a bias extraction line in the semiconductor portion and disposing it near the active element 11, it is possible to improve the gain, output level, stability coefficient, and the like of the high-frequency circuit. It becomes possible.

[0033]

According to the first invention, a semiconductor portion including an active element and a series line connected to each terminal thereof, and a first portion including an input terminal, an input side matching circuit, and a first bias circuit are provided. , An external substrate including an output terminal, an output-side matching circuit, and a second bias circuit; and first and second connections for connecting a semiconductor portion to the first and second external substrates. With the provision of the line, the area of the semiconductor portion can be reduced, and the cost can be reduced. Further, by setting the input / output impedance of the semiconductor portion to a high impedance, transmission loss, reflection loss, and the like in the connection line can be reduced, and the influence of these connection lines can be reduced.

According to the second invention, the active element, the semiconductor portion including the series line connected to each terminal and the open stub, the input terminal, the input side matching circuit, and the first bias circuit are included. A first external substrate including an output terminal, an output side matching circuit, and a second bias circuit; a first external substrate including a semiconductor portion and first and second external substrates connecting the semiconductor portion to the first and second external substrates; By providing the two connection lines, the area of the semiconductor portion can be reduced, and the cost can be reduced. Further, by setting the input / output impedance of the semiconductor portion to a high impedance, transmission loss, reflection loss, and the like in the connection line can be reduced, and the influence of these connection lines can be reduced.

According to the third aspect of the present invention, the active element, the semiconductor portion including the series line connected to each terminal and the short stub, the input terminal, the input side matching circuit, and the first bias circuit are provided. A first external substrate including an output terminal, an output side matching circuit, and a second bias circuit; a first external substrate including a semiconductor portion and first and second external substrates connecting the semiconductor portion to the first and second external substrates; By providing the two connection lines, the area of the semiconductor portion can be reduced, and the cost can be reduced. Further, by setting the input / output impedance of the semiconductor portion to a high impedance, transmission loss, reflection loss, and the like in the connection line can be reduced, and the influence of these connection lines can be reduced.

According to the fourth aspect, a semiconductor portion including an active element, a series line connected to each terminal of the active element, and two bias extraction lines to the active element, an input terminal and an input side matching circuit are provided. A first external substrate including an output terminal and an output-side matching circuit; a third external substrate including first and second bias circuits; a semiconductor portion; By providing the first, second, third, and fourth connection lines for connecting the second and third external substrates, the area of the semiconductor portion can be reduced, and the cost can be reduced. Further, by setting the input / output impedance of the semiconductor portion to a high impedance, transmission loss, reflection loss, and the like in the connection line can be reduced, and the influence of these connection lines can be reduced. Further, depending on the characteristics of the active device, by disposing each bias line near the active device,
It is possible to improve the gain, output level, stability coefficient, and the like of the high-frequency circuit.

According to the fifth aspect, a semiconductor portion including an active element and an input side and an output side matching circuit connected to each terminal thereof, and a first portion including an input terminal and a first bias circuit are provided. An external substrate, a second external substrate including an output terminal and a second bias circuit, and first and second connection lines connecting the semiconductor portion to the first and second external substrates. Thus, the area of the semiconductor portion can be reduced, and the cost can be reduced. Further, by shortening the distance from the active element to the input side and output side matching circuits, it is possible to widen the frequency band for impedance matching.

According to the sixth aspect of the present invention, the active element, the input side and output side matching circuits connected to the respective terminals, the semiconductor part including the two bias extraction lines to the active element, and the input / output terminal are provided. , An external substrate including the first and second bias circuits, and first and second connection lines connecting the semiconductor portion and the external substrate, the area of the semiconductor portion can be reduced, and the cost can be reduced. Can be achieved. Also,
By shortening the distance from the active element to the input side and output side matching circuits, it is possible to widen the frequency band for impedance matching. Further, depending on the characteristics of the active element, by arranging each bias line near the active element, it is possible to improve the gain, output level, stability coefficient, and the like of the high-frequency circuit.

[Brief description of the drawings]

FIG. 1 is a diagram showing Embodiment 1 of a high-frequency circuit according to the present invention.

FIG. 2 is a diagram showing input / output impedance of the high-frequency circuit according to the first embodiment of the present invention;

FIG. 3 is a diagram showing a high-frequency circuit according to a second embodiment of the present invention;

FIG. 4 is a diagram showing a third embodiment of the high-frequency circuit according to the present invention.

FIG. 5 is a diagram showing a fourth embodiment of the high-frequency circuit according to the present invention.

FIG. 6 is a diagram showing a fifth embodiment of the high-frequency circuit according to the present invention.

FIG. 7 is a diagram showing input / output impedance of a high-frequency circuit according to a fifth embodiment of the present invention.

FIG. 8 is a diagram showing a sixth embodiment of the high-frequency circuit according to the present invention.

FIG. 9 is a diagram illustrating an example of an apparatus using a high-frequency circuit.

FIG. 10 is a diagram illustrating an example of a use situation of a device using a high-frequency circuit.

FIG. 11 is a diagram showing a conventional high-frequency circuit.

[Explanation of symbols]

1 transceiver, 2 antennas, 3 targets, 4 signal processors, 5 roads, 6 vehicles, 7 forward-looking radar, 8
Obstacles, 9 humans, 10 MMIC, 11 active elements,
12 input terminal, 13 output terminal, 14 input side matching circuit, 15 output side matching circuit, 16 bias circuit, 17
Series line, 18 Semiconductor part, 19 Connection line, 20
External board, 21 open stub, 22 short stub, 23 bias lead line.

 ────────────────────────────────────────────────── ─── Continued on the front page F term (reference) 5J067 AA04 CA36 CA72 CA73 CA87 CA92 FA16 HA09 HA12 HA19 HA24 HA29 KA12 KA29 KA66 KA68 KS11 LS01 QS04 SA00 SA13 TA01 TA02 5J070 AB24 AC02 AC06 AC11 AD01 AE01 AE09 AF03 AK40

Claims (6)

[Claims] 1. A high-frequency circuit including an active element using a semiconductor, wherein the semiconductor includes the active element and a series line connected to each terminal thereof, and the input / output impedance of each terminal of the series line is high. A part, a bias circuit for the active element, a matching circuit, at least one external substrate including an input / output terminal, and a connection line connecting the semiconductor part and the external substrate. A high-frequency circuit not including a circuit and the matching circuit, and having high input / output impedance of each terminal of the semiconductor portion. 2. A high-frequency circuit including an active element using a semiconductor, wherein the active element includes a series line connected to each terminal of the active element and an open stub connected to the series line. A semiconductor portion having a high impedance input / output impedance, at least one external substrate including a bias circuit and a matching circuit for the active element and an input / output terminal, and a connection line connecting the semiconductor portion and the external substrate. Wherein the semiconductor portion does not include the bias circuit and the matching circuit, and the input / output impedance of each terminal of the semiconductor portion is high. 3. A high-frequency circuit including an active element using a semiconductor, wherein the active element includes a series line connected to each terminal of the active element, and a short stub connected to the series line. A semiconductor portion having a high impedance input / output impedance, at least one external substrate including a bias circuit and a matching circuit for the active element and an input / output terminal, and a connection line connecting the semiconductor portion and the external substrate. Wherein the semiconductor portion does not include the bias circuit and the matching circuit, and the input / output impedance of each terminal of the semiconductor portion is high. 4. In a high-frequency circuit including an active element using a semiconductor, a part of a bias circuit of the active element is added to the series line in the semiconductor portion, and a bias supply point to the active element is set to the active element. The high-frequency circuit according to any one of claims 1 to 3, wherein 5. A high-frequency circuit including an active element using a semiconductor, a semiconductor portion including the active element and its matching circuit, at least one external substrate including a bias circuit for the active element, and the semiconductor A high-frequency circuit comprising: a connection portion connecting a portion to the external substrate; and the semiconductor portion does not include the bias circuit. 6. A high-frequency circuit including an active element using a semiconductor, wherein a part of a bias circuit is added between the active element and the matching circuit in the semiconductor portion, and a bias supply point to the active element is set. 6. The high frequency circuit according to claim 5, wherein said high frequency circuit is close to said active element.