JP2002016027A - Abrasive material recovering device - Google Patents

Abrasive material recovering device

Info

Publication number
JP2002016027A
JP2002016027A JP2000192937A JP2000192937A JP2002016027A JP 2002016027 A JP2002016027 A JP 2002016027A JP 2000192937 A JP2000192937 A JP 2000192937A JP 2000192937 A JP2000192937 A JP 2000192937A JP 2002016027 A JP2002016027 A JP 2002016027A
Authority
JP
Japan
Prior art keywords
slurry
water
abrasive
concentration
membrane separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000192937A
Other languages
Japanese (ja)
Other versions
JP4552168B2 (en
JP2002016027A5 (en
Inventor
Akira Matsumoto
章 松本
Kazuki Hayashi
一樹 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kurita Water Industries Ltd
Original Assignee
Kurita Water Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kurita Water Industries Ltd filed Critical Kurita Water Industries Ltd
Priority to JP2000192937A priority Critical patent/JP4552168B2/en
Publication of JP2002016027A publication Critical patent/JP2002016027A/en
Publication of JP2002016027A5 publication Critical patent/JP2002016027A5/ja
Application granted granted Critical
Publication of JP4552168B2 publication Critical patent/JP4552168B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Landscapes

  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an abrasive material recovery device for efficiently recovering abrasive particles from waste water which contains abrasive material and is discharged out in a CMP process, which is employed in a semiconductor manufacturing factory or the like. SOLUTION: An abrasive material recovering device for recovering abrasive material from waste water discharged out in a CMP process is equipped with a film-separating means, to which waste water discharged out in a CMP process is introduced and a cleaning means which rinses a concentrated water obtained by the film separating means with water.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、研磨材の回収装置
に関する。さらに詳しくは、本発明は、半導体製造工場
などで使用されるCMP(化学的機械研磨:Chemi
cal Mechanical Polishing)工
程から排出される研磨材を含有する研磨工程排水から、
研磨材粒子を効率的に回収して再利用するための研磨材
の回収装置に関する。
The present invention relates to an apparatus for collecting abrasives. More specifically, the present invention relates to a CMP (Chemical Mechanical Polishing) used in a semiconductor manufacturing plant or the like.
cal Mechanical Polishing) from the polishing process wastewater containing the abrasive discharged from the process,
The present invention relates to an abrasive collection device for efficiently collecting and reusing abrasive particles.

【0002】[0002]

【従来の技術】半導体ウエハの上に形成された絶縁膜、
メタル薄膜などの被膜の表面は、高度な平坦面であるこ
とが要求されており、その手段として、研磨パッドなど
の研磨部材と半導体ウエハとの間に研磨スラリーを介在
させた状態で研磨を行うCMPが採用されている。CM
Pで用いられる研磨材としては、分散性がよく粒子径が
揃っているシリカ微粒子や、研磨速度の大きいセリア、
硬度が高く安定なアルミナなどが使用されている。これ
らの研磨材は、所定粒径、濃度の粒子が水中に分散した
スラリーとしてメーカーより提供され、各現場に応じ
て、CMPマシンに供給する際に所定濃度に希釈されて
使用されている。通常、このスラリー中には、水酸化カ
リウム、アンモニア、有機酸、アミン類などのpH調整
剤、分散剤としての界面活性剤、過酸化水素、ヨウ素酸
カリウム、硝酸鉄(III)などの酸化剤などが予め添加さ
れたり、あるいは、研磨時に別途に添加される。これら
の研磨スラリーは、使用量が多く高価である点、また、
産業廃棄物量低減の観点から、再利用することが望まれ
る。しかし、研磨工程排水は、希釈により研磨材濃度が
低下しており、加えて半導体ウエハや、被膜材料、研磨
パッド屑、研磨材が破壊された微細粒子や、研磨粒子が
凝集することによって生じる粒径の大きい固形不純物な
どが混入している。このために、このような研磨工程排
水を無処理で研磨材として再利用すると、研磨材濃度の
低下による研磨速度低下や、ウエハ表面のキズ発生につ
ながる。また、添加薬剤を使用するために、研磨工程排
水には残留する添加薬剤が含まれており、さらには研磨
により生じる金属イオンからなる不純物が含まれてい
る。従って、回収したスラリーを再利用する場合、これ
ら不純物が濃度調整の障害となり、濃度管理が難しいも
のとなっていた。これらの理由から、研磨排水をそのま
ま循環再利用することはできない。従って、再利用に当
たっては、研磨排水から粗大固形物、塩類などの不純物
の除去処理を行い、さらに濃縮処理を行って所定組成の
研磨スラリーを再調製することが必要となる。従来よ
り、CMP工程排水処理のために、さまざまな技術の開
発が試みられている。例えば、CMP工程排水を精密ろ
過膜で処理して粗大固形物を除去したのち、限外ろ過膜
で処理し、さらに薬剤を添加して濃度調整し、研磨材ス
ラリーとして再利用する方法が提案されている。このよ
うな方法によっても、粗大固形物を除去することが可能
であり、ウエハ表面のキズ発生を抑制することは可能で
ある。しかし、添加薬剤や塩類が残留した状態で新規に
薬剤を添加して研磨材濃度、pH調整を行うものであるこ
とから、これらの不純物が濃度調整の障害となり、濃度
調整がうまく行えない結果となっている。また、汚染な
ど、製品に悪影響が生じる結果となる。特に、スラリー
中の研磨材の粒径分布を所定の範囲に保つために、有機
物系の分散剤を使用して、粒径分布を均一に制御してい
る場合は、粒径に与える影響が大となるために、これら
の残留する薬剤、塩類の除去は重要となる。
2. Description of the Related Art An insulating film formed on a semiconductor wafer,
The surface of a coating such as a metal thin film is required to be a highly flat surface, and as a means for performing polishing, a polishing slurry is interposed between a polishing member such as a polishing pad and a semiconductor wafer. CMP is employed. CM
Examples of the abrasive used in P include silica fine particles having a good dispersibility and uniform particle diameter, ceria having a high polishing rate,
Alumina having high hardness and stable is used. These abrasives are provided by a manufacturer as a slurry in which particles having a predetermined particle size and concentration are dispersed in water, and are diluted to a predetermined concentration when supplied to a CMP machine according to each site. Usually, this slurry contains pH adjusters such as potassium hydroxide, ammonia, organic acids, and amines, surfactants as dispersants, and oxidizing agents such as hydrogen peroxide, potassium iodate, and iron (III) nitrate. Or the like is added in advance, or separately added during polishing. These polishing slurries are expensive and expensive,
From the viewpoint of reducing the amount of industrial waste, it is desirable to reuse it. However, the polishing process wastewater has a reduced abrasive concentration due to dilution. In addition, semiconductor wafers, coating materials, polishing pad debris, fine particles in which the abrasive is broken, and particles generated by agglomeration of the abrasive particles. Solid impurities with a large diameter are mixed. Therefore, if such polishing process wastewater is reused without any treatment as an abrasive, the polishing rate decreases due to a decrease in the concentration of the abrasive, and scratches on the wafer surface are generated. Further, since the additive chemical is used, the polishing process wastewater contains the residual additive chemical, and further contains impurities made of metal ions generated by polishing. Therefore, when the recovered slurry is reused, these impurities hinder concentration adjustment, making concentration management difficult. For these reasons, the polishing wastewater cannot be circulated and reused as it is. Therefore, when reusing, it is necessary to remove impurities such as coarse solids and salts from the polishing wastewater, and to perform a concentration treatment to re-prepare a polishing slurry having a predetermined composition. Conventionally, development of various technologies for wastewater treatment in a CMP process has been attempted. For example, a method has been proposed in which wastewater from the CMP process is treated with a microfiltration membrane to remove coarse solids, then treated with an ultrafiltration membrane, a chemical is added, the concentration is adjusted, and the slurry is reused as an abrasive slurry. ing. Even by such a method, it is possible to remove coarse solids, and it is possible to suppress generation of scratches on the wafer surface. However, since the concentration of the polishing agent and the pH are adjusted by adding a new agent while the added chemicals and salts remain, these impurities hinder the concentration adjustment, and the result is that the concentration adjustment cannot be performed well. Has become. In addition, adverse effects on the product such as contamination are caused. In particular, when the particle size distribution of the abrasive in the slurry is controlled uniformly by using an organic dispersant to maintain the particle size distribution within a predetermined range, the effect on the particle size is large. Therefore, it is important to remove these residual drugs and salts.

【0003】[0003]

【発明が解決しようとする課題】本発明は、半導体製造
工場などで使用されるCMP工程から排出される研磨材
を含有する研磨工程排水から、研磨材粒子を効率的に回
収して再利用するための研磨材の回収装置を提供するこ
とを目的としてなされたものである。
SUMMARY OF THE INVENTION The present invention efficiently recovers and reuses abrasive particles from a polishing process wastewater containing an abrasive discharged from a CMP process used in a semiconductor manufacturing plant or the like. The purpose of the present invention is to provide an apparatus for collecting abrasives for the purpose.

【0004】[0004]

【課題を解決するための手段】本発明者らは、上記の課
題を解決すべく鋭意研究を重ねた結果、CMP工程排水
が導入される膜分離手段と、膜分離しで得られた濃縮水
を水洗する洗浄手段を組み合わせ、濃縮水に水を加えて
希釈、再分散し、次いで膜分離により濃縮する操作を行
って水洗することにより、CMP工程排水中の塩類や有
機物などの不純物を効果的に分離し、純度の高い研磨材
粒子のスラリーを回収することが可能となることを見い
だし、この知見に基づいて本発明を完成するに至った。
すなわち、本発明は、(1)CMP工程排水から研磨材
を回収する装置において、CMP工程排水が導入される
膜分離手段と、膜分離手段で得られた濃縮水を水洗する
洗浄手段とを備えてなることを特徴とする研磨剤の回収
装置、(2)洗浄手段からの液が導入される濃度調整手
段を備えてなる第1項記載の研磨材の回収装置、及び、
(3)膜分離手段の前段又は膜分離手段と濃度調整手段
との間に粗大固形物を除去するろ過処理手段を備えてな
る第1項記載の研磨材の回収装置、を提供するものであ
る。さらに、本発明の好ましい態様として、(4)膜分
離手段が、主として柱状のβ型窒化珪素結晶からなるセ
ラミック膜を備えてなる第1項記載の研磨材の回収装
置、を挙げることができる。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems, and as a result, a membrane separation means for introducing wastewater from the CMP step, and a concentrated water obtained by membrane separation. Combining the washing means to wash the water, diluting and redispersing the concentrated water by adding water, and then performing the operation of concentrating by membrane separation and washing with water to effectively remove impurities such as salts and organic matter in the wastewater of the CMP process. And found that a slurry of high-purity abrasive particles could be recovered, and based on this finding, completed the present invention.
That is, the present invention provides (1) an apparatus for recovering an abrasive from wastewater from a CMP step, comprising: a membrane separation means for introducing the wastewater from the CMP step; and a washing means for washing the concentrated water obtained by the membrane separation means with water. 2. The abrasive recovery device according to claim 1, comprising: a polishing agent recovery device, (2) a concentration adjustment device into which a liquid from the cleaning device is introduced, and
(3) An apparatus for recovering an abrasive according to item 1, comprising a filtration treatment means for removing coarse solids before the membrane separation means or between the membrane separation means and the concentration adjustment means. . Further, as a preferred embodiment of the present invention, (4) the apparatus for collecting abrasives according to item 1, wherein the membrane separation means comprises a ceramic membrane mainly composed of columnar β-type silicon nitride crystals.

【0005】[0005]

【発明の実施の形態】図1は、本発明の研磨材の回収装
置の一態様の工程系統図である。本態様の研磨材の回収
装置は、CMPマシン部、前ろ過部、濃縮部及び濃度調
整部から構成されている。CMPマシン部は、新品スラ
リーを所定濃度に希釈して貯留するスラリー供給タンク
1、スラリー供給タンクから供給されるスラリーにより
ウエハを研磨するCMPマシン2及び研磨後の排スラリ
ーを貯留する排スラリータンク3を有する。前ろ過部
は、CMPマシン部からの排スラリーを貯留するスラリ
ー受タンク4、スラリー受タンクより供給される排スラ
リー中の粗大固形物をろ過処理して除去するフィルター
5及びフィルターで粗大固形物が除去されたろ過水を貯
留するろ過水タンク6を有する。濃縮部は、前ろ過部か
らのろ過水を濃縮処理する膜分離手段7を有する。濃度
調整部は、分散剤希釈タンク8において希釈された分散
剤が、前ろ過部から供給されるろ過水に添加される濃度
調整タンク9、濃度調整タンクから送られるスラリー中
の再凝集した粗大粒子を除いて研磨材の粒径を揃えるフ
ィルター10及び回収スラリーを貯留するスラリー撹拌
タンク11を有する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a process system diagram of one embodiment of the abrasive recovery apparatus of the present invention. The abrasive recovery device of this aspect includes a CMP machine unit, a pre-filtration unit, a concentration unit, and a concentration adjustment unit. The CMP machine section includes a slurry supply tank 1 for diluting a new slurry to a predetermined concentration and storing the slurry, a CMP machine 2 for polishing a wafer with the slurry supplied from the slurry supply tank, and a waste slurry tank 3 for storing a waste slurry after polishing. Having. The pre-filtration unit includes a slurry receiving tank 4 for storing waste slurry from the CMP machine unit, a filter 5 for filtering and removing coarse solids in the waste slurry supplied from the slurry receiving tank, and a filter for removing coarse solids. It has a filtered water tank 6 for storing the removed filtered water. The concentrating unit has a membrane separation means 7 for concentrating the filtered water from the pre-filtration unit. The concentration adjusting unit includes a concentration adjusting tank 9 in which the dispersant diluted in the dispersant dilution tank 8 is added to the filtered water supplied from the pre-filtration unit, and reaggregated coarse particles in the slurry sent from the concentration adjusting tank. And a slurry stirring tank 11 for storing the recovered slurry.

【0006】CMPマシン部から排出された平均粒径
0.05〜0.5μm程度の研磨材を含む排スラリーは、
一旦スラリー受タンク4に受け入れられ、次いで、膜分
離手段の前段の粗大固形物を除去するろ過処理手段とし
てのフィルター5によりろ過され、0.7〜1.5μm程
度の大粒径の研磨パッド屑などの不純物が除去される。
排スラリー中の大粒径の不純物を除去することにより、
膜分離手段における負荷を軽減することができる。この
フィルターとして、研磨材よりも大きく研磨屑よりも小
さい孔径を有する精密ろ過膜(MF)を用いると、膜面
にケーキ層が形成されるために小粒径の研磨材までもが
捕捉され、その結果激しい目詰まりが生じる。従って、
研磨パッド屑よりも大きい目開きの精密ろ過膜が適して
おり、孔径10〜100μmの精密ろ過膜が好ましく、
孔径25〜75μmの精密ろ過膜がより好ましい。精密
ろ過膜の膜材質に特に制限はなく、例えば、ポリプロピ
レン、ポリカーボネート、三酢酸セルロース、ポリアミ
ド、ポリ塩化ビニル、ポリフッ化ビニリデンなどを挙げ
ることができる。特に、これらのいずれかの材質からな
り、一次側から二次側にかけて孔が微細になる多層構造
のろ過エレメントを有する精密ろ過膜を好適に用いるこ
とができる。
[0006] The slurry discharged from the CMP machine and containing abrasive having an average particle size of about 0.05 to 0.5 µm is
Once received in the slurry receiving tank 4 and then filtered by a filter 5 as a filtering means for removing coarse solids at the preceding stage of the membrane separation means, polishing pad debris having a large particle size of about 0.7 to 1.5 μm. And other impurities are removed.
By removing large particle size impurities in the waste slurry,
The load on the membrane separation means can be reduced. When a microfiltration membrane (MF) having a pore size larger than the abrasive and smaller than the polishing debris is used as the filter, a cake layer is formed on the membrane surface, so that even the abrasive having a small particle diameter is captured. The result is severe clogging. Therefore,
A microfiltration membrane having an aperture larger than the polishing pad debris is suitable, and a microfiltration membrane having a pore size of 10 to 100 μm is preferable.
A microfiltration membrane having a pore size of 25 to 75 μm is more preferred. The material of the microfiltration membrane is not particularly limited, and examples thereof include polypropylene, polycarbonate, cellulose triacetate, polyamide, polyvinyl chloride, and polyvinylidene fluoride. In particular, it is possible to suitably use a microfiltration membrane having any of these materials and having a multi-layered filtration element whose pores become finer from the primary side to the secondary side.

【0007】精密ろ過膜によるろ過処理条件に特に制限
はないが、圧力0.01〜0.5Mpaで排スラリーを全量
ろ過することが好ましい。運転に際しては、入口と出口
の差圧が0.01MPa以上になったとき、逆洗をかける
か、あるいは、膜の交換を行うことが好ましい。また、
フィルターを2段以上の多段に設け、孔径の大きいフィ
ルターを前段、孔径の小さいフィルターを後段に設ける
ことにより、膜寿命を延ばすことができる。なお、本態
様の装置においては、膜分離手段の前段にフィルター5
を設けて粗大固形物を除去しているが、粗大固形物を除
去するろ過処理手段を膜分離手段の後段、すなわち、膜
分離手段と濃度調整手段との間に設けることもできる。
ろ過処理手段としてのフィルターを膜分離手段の後段に
設けると、膜濃縮されて絶対量が減少した液を対象にす
るので、フィルターの寿命を延ばすことができる。
There are no particular restrictions on the conditions for the filtration treatment using the microfiltration membrane, but it is preferable to filter the entire amount of the waste slurry at a pressure of 0.01 to 0.5 MPa. In operation, when the pressure difference between the inlet and the outlet becomes 0.01 MPa or more, it is preferable to perform backwashing or replace the membrane. Also,
By providing filters in two or more stages and providing a filter with a large pore size in the first stage and a filter with a small pore size in the second stage, the life of the membrane can be extended. In the apparatus of the present embodiment, the filter 5 is provided before the membrane separation means.
Is provided to remove the coarse solids, but a filtration treatment means for removing the coarse solids may be provided after the membrane separation means, that is, between the membrane separation means and the concentration adjusting means.
If the filter as the filtration means is provided at the subsequent stage of the membrane separation means, the liquid whose membrane has been concentrated and whose absolute amount has been reduced is targeted, so that the life of the filter can be extended.

【0008】前段のろ過処理手段であるフィルター5に
より処理されたろ過水は、ろ過水タンク6に貯留された
のち、膜分離手段7からなる濃縮部に送給される。膜分
離手段に使用する膜に特に制限はないが、酸化アルミナ
を焼結したモノリス型のセラミック膜、窒化珪素を焼結
した主として柱状のβ型窒化珪素結晶からなるセラミッ
ク膜などを好適に用いることができる。主として柱状の
β型窒化珪素結晶からなるセラミック膜は、窒化珪素粉
末と他の添加物粉末の混合物から成形体を作製し、高温
で熱処理して多孔体を形成し、さらに酸及びアルカリで
処理して窒化珪素以外の添加物を溶解除去することによ
り製造することができる。柱形のβ型窒化珪素結晶が絡
み合った微細組織からなるセラミック膜は、高気孔率、
高強度で、単層ハニカム構造のエレメントとすることが
できる。有機物系の分散剤を使用したCMP工程排水に
は、分散剤及びスラリーによる目詰まり防止のために、
気孔率が大きく、低流速でも高フラックスが得られる窒
化珪素セラミック膜を用いることが特に好ましい。使用
する窒化珪素セラミック膜の孔径に特に制限はないが、
孔径0.01〜0.5μmの限外ろ過膜(UF)又は精密
ろ過膜(MF)を好適に用いることができる。膜分離手
段における濃縮の程度に特に制限はないが、通常は、濃
縮水中の研磨材の濃度が5〜50重量%となるような濃
縮条件とすることが好ましい。また、処理条件は、0.
01〜0.5Mpaの圧力で、濃縮水配管12を経由してろ
過水タンク6へ濃縮水を循環するクロスフローによる回
分式又は半回分式による濃縮方法が好ましい。膜分離手
段により分離した透過水は、系外へ排出して排水処理す
ることができるが、一部をピットに貯留しておき、膜洗
浄の際の逆洗水として利用することが好ましい。
[0008] The filtered water treated by the filter 5 which is the filtration means at the former stage is stored in a filtered water tank 6 and then sent to a concentrating section comprising a membrane separation means 7. Although there is no particular limitation on the membrane used for the membrane separation means, a monolithic ceramic film obtained by sintering alumina oxide, a ceramic film mainly made of columnar β-type silicon nitride crystal obtained by sintering silicon nitride, and the like are preferably used. Can be. A ceramic film mainly composed of columnar β-type silicon nitride crystals is formed from a mixture of silicon nitride powder and other additive powders, heat-treated at a high temperature to form a porous body, and further treated with acid and alkali. And dissolving and removing additives other than silicon nitride. A ceramic film composed of a microstructure in which columnar β-type silicon nitride crystals are intertwined has a high porosity,
An element having a high strength and a single-layer honeycomb structure can be obtained. In the CMP process wastewater using an organic dispersant, in order to prevent clogging with the dispersant and slurry,
It is particularly preferable to use a silicon nitride ceramic film having a high porosity and a high flux even at a low flow rate. There is no particular limitation on the pore size of the silicon nitride ceramic film used,
An ultrafiltration membrane (UF) or microfiltration membrane (MF) having a pore size of 0.01 to 0.5 μm can be suitably used. Although there is no particular limitation on the degree of concentration in the membrane separation means, it is usually preferable to set the concentration conditions so that the concentration of the abrasive in the concentrated water is 5 to 50% by weight. In addition, the processing conditions are set to 0.
A batch-type or semi-batch type concentration method using a cross flow in which concentrated water is circulated to the filtered water tank 6 via the concentrated water pipe 12 at a pressure of 01 to 0.5 Mpa is preferable. The permeated water separated by the membrane separation means can be discharged to the outside of the system for drainage treatment. However, it is preferable that a part of the permeated water be stored in a pit and used as backwash water at the time of membrane cleaning.

【0009】本態様の装置における膜分離手段で得られ
た濃縮水を水洗する洗浄手段は、ろ過水タンクへ洗浄水
を供給する手段及びろ過水タンクにおいて濃縮水を洗浄
水で希釈する手段により構成されている。水洗は、濃縮
水に洗浄水を加えて希釈、再分散し、次いで膜分離によ
り濃縮することにより行うことができ、水洗に超純水を
使用することにより、塩類や有機物などの不純物を効果
的に分離して、純度の高い研磨材のスラリーを得ること
ができる。濃縮水の濃縮の程度をコリオリ式の濃度計、
レベル計などにより監視し、所定濃度まで濃縮された濃
縮水に、洗浄水供給手段により洗浄水を供給して撹拌す
ることにより希釈する。洗浄水により希釈された濃縮水
は、膜分離手段7とろ過水タンク6との間を循環させ
て、濃縮と水洗を同時に行うことができる。この水洗に
より、塩類、有機物、微少な研磨屑などの不純物は、膜
分離手段において除去される。水洗に用いる洗浄水の量
が少なすぎると十分な洗浄効果が得られず、逆に過度に
多いと使用水量が増加して回収処理コストが増大する。
通常は、濃縮水に対して10〜100容量倍の洗浄水を
用い、水洗を2回程度行うことが好ましい。洗浄水とし
ては、通常は超純水が用いられるが、研磨材の凝集を防
止するために、分散剤を適量添加した超純水を用いるこ
とが好ましい。なお、本発明装置において、洗浄手段
は、ろ過水タンクを含む構成に限らず、濃度調整タンク
の前段に濃縮水を貯留する濃縮水タンクを設けて洗浄水
を供給し、洗浄手段を構成することもできる。
The washing means for washing the concentrated water obtained by the membrane separation means in the apparatus of the present embodiment is constituted by means for supplying washing water to the filtered water tank and means for diluting the concentrated water with the washing water in the filtered water tank. Have been. Washing can be performed by adding washing water to concentrated water, diluting and redispersing, and then concentrating by membrane separation.Using ultrapure water for washing effectively removes impurities such as salts and organic substances. And a slurry of a high-purity abrasive can be obtained. The degree of concentration of the concentrated water is measured by a Coriolis type densitometer,
Monitoring is performed by a level meter or the like, and the concentrated water concentrated to a predetermined concentration is diluted by supplying the washing water by the washing water supply means and stirring. The concentrated water diluted by the washing water can be circulated between the membrane separation means 7 and the filtered water tank 6 to perform the concentration and the water washing simultaneously. By this water washing, impurities such as salts, organic substances, and fine polishing debris are removed by the membrane separation means. If the amount of washing water used for water washing is too small, a sufficient washing effect cannot be obtained, and if it is excessively large, the amount of water used increases and the cost of recovery treatment increases.
Normally, it is preferable to use about 10 to 100 times by volume of the washing water with respect to the concentrated water, and perform the washing twice. Ultrapure water is usually used as the washing water, but it is preferable to use ultrapure water to which an appropriate amount of a dispersant has been added in order to prevent agglomeration of the abrasive. In the apparatus of the present invention, the cleaning means is not limited to the configuration including the filtered water tank, but may be provided with a concentrated water tank for storing concentrated water at a stage preceding the concentration adjusting tank to supply the cleaning water to constitute the cleaning means. Can also.

【0010】水洗が終了し所定濃度まで濃縮されたスラ
リーは、洗浄手段から濃度調整手段としての後段の濃度
調整タンク9に導入され、超純水で希釈された分散剤が
供給されて所定濃度に調整される。本発明装置によれ
ば、洗浄により塩類、有機物などが除去されているため
に、濃度調整が容易であり、塩類や有機物などの不純物
が極めて少ない、新品同等のスラリーとして回収するこ
とが可能となる。なお、濃度の検知は、コリオリ式の濃
度計などを用いて行うことができる。所定濃度に調整さ
れたスラリーは、濃度調整タンクの後段に設けられたろ
過処理手段としてのフィルター10にて再凝集で粗大化
した研磨材を除去し、所望の粒径分布に揃えたのち、ス
ラリー撹拌タンク11に貯留し、回収スラリーとして取
り出す。ここで用いるフィルターとしては、膜分離手段
の前段のろ過処理手段として用いた精密ろ過膜などと同
様なフィルターを用いることができる。また、フィルタ
ーは1段に限らず、2段以上の多段とすることもでき
る。本発明装置において、スラリー撹拌タンク11は必
ずしも必要ではなく、CMPマシン部のスラリー供給タ
ンク1に直接返送して、循環再利用することもできる。
After the washing, the slurry concentrated to a predetermined concentration is introduced from the washing means into a concentration adjusting tank 9 at a subsequent stage as a concentration adjusting means, and a dispersant diluted with ultrapure water is supplied to the slurry to a predetermined concentration. Adjusted. According to the apparatus of the present invention, since salts, organic substances, and the like are removed by washing, the concentration can be easily adjusted, and impurities such as salts and organic substances are extremely small, and it is possible to recover as a slurry equivalent to a new article. . The density can be detected using a Coriolis type densitometer or the like. The slurry adjusted to a predetermined concentration is used to remove abrasives coarsened by re-agglomeration in a filter 10 as a filtration processing means provided at the latter stage of the concentration adjustment tank, and after adjusting to a desired particle size distribution, It is stored in the stirring tank 11 and taken out as a recovered slurry. As the filter used here, the same filter as the microfiltration membrane used as the filtration treatment means in the preceding stage of the membrane separation means can be used. The number of filters is not limited to one, but may be two or more. In the apparatus of the present invention, the slurry stirring tank 11 is not always necessary, and the slurry can be returned to the slurry supply tank 1 of the CMP machine directly and recycled.

【0011】[0011]

【発明の効果】本発明の研磨材の回収装置によれば、C
MP工程排水から、研磨材スラリーとして容易に再利用
可能な回収スラリーを効率的に得ることができる。しか
も、不純物を水洗により除去した上で濃度調整するの
で、新品スラリーと同等の性能を有するスラリーを回収
することができる。従って、本発明装置によれば、ウエ
ハのCMP工程における高価な研磨材スラリーの使用量
を節減することができ、スラリーコストの低減を図るこ
とができる。また、排出される排液量が低減されるため
に、排液処理系などの負荷を軽減し、産業廃棄物処理量
を低減することができる。
According to the abrasive recovery apparatus of the present invention, C
A recovered slurry that can be easily reused as an abrasive slurry can be efficiently obtained from the MP process wastewater. Moreover, since the concentration is adjusted after removing impurities by washing with water, a slurry having the same performance as a new slurry can be recovered. Therefore, according to the apparatus of the present invention, the amount of expensive abrasive slurry used in the wafer CMP process can be reduced, and the slurry cost can be reduced. Further, since the amount of discharged wastewater is reduced, the load on the wastewater treatment system and the like can be reduced, and the amount of industrial waste treated can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、本発明の研磨材の回収装置の一態様の
工程系統図である。
FIG. 1 is a process flow diagram of one embodiment of an abrasive recovery apparatus of the present invention.

【符号の説明】[Explanation of symbols]

1 スラリー供給タンク 2 CMPマシン 3 排スラリータンク 4 スラリー受タンク 5 フィルター 6 ろ過水タンク 7 膜分離手段 8 分散剤希釈タンク 9 濃度調整タンク 10 フィルター 11 スラリー撹拌タンク 12 濃縮水配管 DESCRIPTION OF SYMBOLS 1 Slurry supply tank 2 CMP machine 3 Waste slurry tank 4 Slurry receiving tank 5 Filter 6 Filtration water tank 7 Membrane separation means 8 Dispersant dilution tank 9 Concentration adjustment tank 10 Filter 11 Slurry stirring tank 12 Concentrated water piping

フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) C02F 1/44 C02F 1/44 E Fターム(参考) 3C047 GG14 GG17 3C058 AA07 AC04 CA01 CB03 CB06 DA12 4D006 GA06 GA07 JA56A KA02 KA63 KA72 KB14 KD04 KD14 KD17 KE07Q KE07R MA22 MB02 MC03 MC03X NA39 NA54 PA04 PB08 PB15 PB70 PC01 Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat II (reference) C02F 1/44 C02F 1/44 EF term (reference) 3C047 GG14 GG17 3C058 AA07 AC04 CA01 CB03 CB06 DA12 4D006 GA06 GA07 JA56A KA02 KA63 KA72 KB14 KD04 KD14 KD17 KE07Q KE07R MA22 MB02 MC03 MC03X NA39 NA54 PA04 PB08 PB15 PB70 PC01

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】CMP工程排水から研磨材を回収する装置
において、CMP工程排水が導入される膜分離手段と、
膜分離手段で得られた濃縮水を水洗する洗浄手段とを備
えてなることを特徴とする研磨剤の回収装置。
An apparatus for recovering an abrasive from wastewater from a CMP process, comprising: a membrane separation means into which wastewater from the CMP process is introduced;
A polishing means for washing the concentrated water obtained by the membrane separation means with water.
【請求項2】洗浄手段からの液が導入される濃度調整手
段を備えてなる請求項1記載の研磨材の回収装置。
2. The apparatus according to claim 1, further comprising a concentration adjusting means for introducing a liquid from the cleaning means.
【請求項3】膜分離手段の前段又は膜分離手段と濃度調
整手段との間に粗大固形物を除去するろ過処理手段を備
えてなる請求項1記載の研磨材の回収装置。
3. The polishing material recovery apparatus according to claim 1, further comprising a filtration treatment means for removing coarse solids before the membrane separation means or between the membrane separation means and the concentration adjustment means.
JP2000192937A 2000-06-27 2000-06-27 Abrasive recovery device Expired - Fee Related JP4552168B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002018715A (en) * 2000-06-30 2002-01-22 Kurita Water Ind Ltd Abrasive recovery device
JP2002075929A (en) * 2000-08-24 2002-03-15 Nippon Chem Ind Co Ltd Method for regenerating polishing spent liquid
WO2012114395A1 (en) * 2011-02-25 2012-08-30 野村マイクロ・サイエンス株式会社 Abrasive recovery method and abrasive recovery device
JP5850192B1 (en) * 2015-03-19 2016-02-03 コニカミノルタ株式会社 Abrasive recovery method

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JP2000288935A (en) * 1999-04-07 2000-10-17 Kurita Water Ind Ltd Method and device for recovering non-colloidal abrasive material

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JPH0372151U (en) * 1989-11-15 1991-07-22
JPH10118899A (en) * 1996-10-18 1998-05-12 Nec Corp Method and device for recovering and reusing abrasive
JPH11121408A (en) * 1997-10-15 1999-04-30 Kurita Water Ind Ltd Device for recovering abrasive slurry
JP2000071172A (en) * 1998-08-28 2000-03-07 Nec Corp Regenerative unit for and regenerative method of slurry for mechanochemical polishing
JP2000288935A (en) * 1999-04-07 2000-10-17 Kurita Water Ind Ltd Method and device for recovering non-colloidal abrasive material

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002018715A (en) * 2000-06-30 2002-01-22 Kurita Water Ind Ltd Abrasive recovery device
JP2002075929A (en) * 2000-08-24 2002-03-15 Nippon Chem Ind Co Ltd Method for regenerating polishing spent liquid
JP4585100B2 (en) * 2000-08-24 2010-11-24 日本化学工業株式会社 How to recycle polishing used liquid
WO2012114395A1 (en) * 2011-02-25 2012-08-30 野村マイクロ・サイエンス株式会社 Abrasive recovery method and abrasive recovery device
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JP5850192B1 (en) * 2015-03-19 2016-02-03 コニカミノルタ株式会社 Abrasive recovery method
WO2016147968A1 (en) * 2015-03-19 2016-09-22 コニカミノルタ株式会社 Recovery method for abrasive
US10286522B2 (en) 2015-03-19 2019-05-14 Konica Minolta, Inc. Recovery method for abrasive

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