JP2002014155A - Millimeter-wave transceiver - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate positioning of parts so as to greatly enhance manufacturing operability and enhance the propagation characteristic of high frequency signals, which results in enhanced, stable performance of a millimeter-wave transceiver for detectable range and distance, detection of the position and speed of a target and the like, when the transceiver is applied to a millimeter- wave radar or the like. SOLUTION: In the millimeter-wave transceiver, having a sending antenna and a receiving antenna integrated with each other, a Gunn diode 3 is installed in a metallic member 2, and the metallic member 2 is provided with a choke- type bias supply line 4a, formed with alternating wide and narrow lines and a conductor strip 5 for connecting the line 4a to the diode 3 in a straight line. The wide and narrow lines of the line 4a are each approximately λ/4 long, and the length of the conductor strip 5 is approximately (3/4)+n}l (n is an integer of 0 or larger).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a millimeter wave transceiver such as a nonradiative dielectric line type millimeter wave radar using a high frequency circuit such as a millimeter wave integrated circuit.

[0002]

2. Description of the Related Art A conventional nonradiative dielectric line type millimeter wave transceiver is shown in FIGS. First, a non-radiative dielectric waveguide (hereinafter referred to as an NRD guide) will be described. The NRD guide includes a pair of parallel plate conductors, and the distance z between them is z ≦
By setting it as λ / 2, noise is prevented from entering the dielectric line disposed between these parallel plate conductors from the outside, and high-frequency signals (hereinafter also referred to as signals) from the dielectric line to the outside are eliminated. Signals are transmitted without radiation. Here, λ is the wavelength of an electromagnetic wave (high-frequency signal) propagating in air at the used frequency.

The millimeter wave transceiver shown in FIGS. 13 and 14 is of the above-mentioned NRD guide type in which various components are arranged between a pair of parallel plate conductors. FIG. 13 shows an integrated transmission antenna and reception antenna. FIG. 14 is a plan view of the
FIG. 3 is a plan view of an independent transmitting antenna and receiving antenna.

In FIG. 13, reference numeral 41 denotes one parallel plate conductor of the present invention (the other is omitted), and reference numeral 42 denotes a voltage-controlled millimeter-wave signal oscillating unit provided at one end of a first dielectric line 43, that is, A voltage-controlled oscillating unit that periodically controls a bias voltage of a variable capacitance diode disposed near the high-frequency diode of the first dielectric line 43 so that the bias voltage application direction matches the electric field direction of the high-frequency signal. Then, by forming a triangular wave, a sine wave or the like, the signal is output as a frequency-modulated millimeter wave signal for transmission.

Reference numeral 43 denotes a first dielectric line for transmitting a millimeter-wave signal obtained by modulating a high-frequency signal output from a high-frequency diode, and reference numeral 44 denotes a first dielectric line and a third dielectric line, respectively. A circulator 45 comprising a ferrite disk 44a and the like having first, second, and third connection portions (not shown) is connected to the second connection portion of the circulator 44 to propagate a millimeter wave signal. And a third dielectric line having a transmitting / receiving antenna 46 at its tip,
Is a transmitting / receiving antenna formed by making the tip of the third dielectric line 45 tapered or the like.

A circulator 47 receives a signal transmitted and received by a transmitting / receiving antenna 46 and propagates through a third dielectric line 45.
The fourth dielectric line 48 for transmitting the received wave output from the third connection portion to the mixer 49 side is disposed close to the first dielectric line 43 such that one end side is electromagnetically coupled to the first dielectric line 43,
A second dielectric line 48a for transmitting a part of the millimeter wave signal to the mixer 49 side is a non-reflection terminator (terminator) provided at one end of the second dielectric line 48 opposite to the mixer 49. It is. In the figure, M1 mixes a part of the millimeter wave signal and the received wave by bringing the middle of the second dielectric line 48 and the middle of the fourth dielectric line 47 close to each other and electromagnetically coupling them. This is a mixer section for generating an intermediate frequency signal.

In the type of FIG. 14 in which the transmitting antenna and the receiving antenna are independent, 51 is one parallel plate conductor (the other is omitted), and 52 is a first dielectric line 53.
, A voltage-controlled millimeter-wave signal oscillating unit provided at one end of the first dielectric line 53, and a variable capacitor disposed near the high-frequency diode of the first dielectric line 53 such that the bias voltage application direction matches the electric field direction of the high-frequency signal. By periodically controlling the bias voltage of the diode to make it a triangular wave, a sine wave, or the like, it outputs a frequency-modulated transmission millimeter wave signal.

Reference numeral 53 denotes a first dielectric line for transmitting a millimeter-wave signal obtained by modulating a high-frequency signal output from the high-frequency diode, and 54 denotes a first, third, and fifth dielectric line 5.
3, 55, 57 respectively connected to the first, second, third
Ferrite disk 54a having a connection portion (not shown)
A circulator 55 comprising
4, a third dielectric line which is connected to the second connection portion, propagates the millimeter wave signal, and has a transmission antenna 56 at the distal end. The third dielectric line 56 has a tapered tip end of the third dielectric line 55. Transmitting antenna, 57
Is a fifth dielectric line connected to the third connection part of the circulator 54 and provided at the tip with a non-reflection termination 57a for attenuating a millimeter-wave signal for transmission.

Reference numeral 58 denotes a second dielectric line which is disposed close to the first dielectric line 53 so that one end thereof is electromagnetically coupled, and transmits a part of the millimeter wave signal to the mixer 61 side.
Reference numeral 58a denotes a non-reflection terminal provided at one end of the second dielectric line 58 on the opposite side to the mixer 61, and reference numeral 59 denotes a fourth which propagates a reception wave received by the reception antenna 60 to the mixer 61 side. This is a dielectric line. In the figure, M2 mixes a part of the millimeter wave signal and the received wave by bringing the middle of the second dielectric line 58 and the middle of the fourth dielectric line 59 close to each other and electromagnetically coupling them. Is a mixer section for generating an intermediate frequency signal.

In such a millimeter-wave transceiver, the millimeter-wave signal oscillating units 42 and 52 having high-frequency diodes are
The configuration was as shown in FIGS. FIG.
, 1 is a pair of parallel plate conductors, and the interval z between them is z ≦ λ / 2, and constitutes an NRD guide.
Here, λ is the wavelength of an electromagnetic wave (high-frequency signal) propagating in the air at the operating frequency.

Reference numeral 2 denotes a metal member such as a metal block for mounting (mounting) a gun diode as a high-frequency diode. Reference numeral 3 denotes a gun diode. Reference numeral 4 denotes a metal member. A wiring board on which a choke-type bias supply line 4a functioning as a low-pass filter for supplying a voltage and preventing leakage of a high-frequency signal is formed.
a, a band-shaped conductor such as a metal foil ribbon connecting the upper conductor of the Gunn diode 3, 6 is a metal strip resonator provided with a metal strip line 6 a for resonance on a dielectric substrate, and 7 is a resonance by the metal strip resonator 6. A dielectric line for transmitting the high-frequency signal to the outside (the first dielectric line 43,
53). In FIG. 15, a part of the upper side of the parallel plate conductor 1 is partially cut away for seeing through the inside.

In the millimeter wave signal oscillating section (Gun diode oscillator) shown in FIG. 15, a metal member 2 having a Gun diode 3 mounted thereon is disposed between a pair of parallel flat conductors 1 and oscillated from the Gun diode 3. High-frequency signals (electromagnetic waves) such as millimeter waves and microwaves are guided to the dielectric line 7 via the metal strip resonator 6 having the metal strip line 6a. And the choke type bias supply line 4a is
As shown in FIG. 16, the length of the wide line and the length of the narrow line are respectively set to approximately λ / 4, and they constitute a choke in which they are repeatedly formed. It is set to approximately λ / 4 and functions as a part of a low-pass filter.

Further, as shown in FIGS. 17 and 18, a wiring board 18 loaded with a varactor diode 110, which is a type of variable capacitance diode and is a frequency modulation diode, is provided in the middle of the dielectric line 7. The bias voltage application direction B of the varactor diode 110 is a direction perpendicular to the propagation direction D of the high-frequency signal in the dielectric line 7 and parallel to the main surface of the parallel plate conductor 1. This bias voltage application direction B is determined by the LS propagating in the dielectric line 7.
It matches the electric field direction E of the high frequency signal of _M01 mode,
Thereby, the high-frequency signal is electromagnetically coupled to the varactor diode 110, and the capacitance of the varactor diode 110 is changed by controlling the bias voltage.
The oscillation frequency of the high frequency signal can be controlled. FIG.
In FIG. 7, reference numeral 19 denotes a dielectric plate having a high relative dielectric constant for achieving impedance matching between the varactor diode 110 and the dielectric line 7.

As shown in FIG. 18, a second choke type bias supply line 112 is formed on one main surface of the wiring board 18, and a beam lead type varactor is provided in the middle of the second choke type bias supply line 112. Diode 110
Is arranged. Second choke type bias supply line 11
2 is connected to the varactor diode 110 at the electrode 1
11 are formed.

The high-frequency signal oscillated from the Gunn diode 3 is guided to the dielectric line 7 through the metal strip resonator 6. Next, a part of the high-frequency signal is reflected by the varactor diode 110 to form the Gunn diode 3.
Return to the side. When this reflected signal changes with the capacitance of the varactor diode 110, the oscillation frequency changes.

[0016]

However, in the above-described conventional millimeter-wave signal oscillating section, the metal strip resonator 6, the metal member 2 and the dielectric line 7 are individually positioned and arranged, and the parallel plate conductors 1, 1 are arranged. Therefore, if the processing accuracy of the metal strip resonator 6 is low, the metal strip resonator 6 is displaced by vibration or its own weight, and if the positioning is not accurate, the dielectric material is The propagation characteristics to the line 7 were deteriorated. That is, it is necessary to control the processing accuracy and the positioning accuracy of the metal strip resonator 6, and there is a problem that the workability of the manufacturing is poor, so that it is not suitable for mass production.

When the installation positions of the components such as the metal member 2, the dielectric line 7, and the metal strip resonator 6 are delicately shifted, the oscillation frequency is delicately changed. However, there is a problem that the performance of the detection distance, the target position detection, the target speed detection, and the like is deteriorated and accurate detection becomes difficult.

Further, the conventional millimeter-wave signal oscillating section has a problem that the high-frequency signal output is reduced because the high-frequency signal is transmitted through the wiring board 18 on which the varactor diode 110 is installed. . Also,
To adjust the frequency modulation width of the high-frequency signal, it is necessary to change the insertion position of the varactor diode 110.
It is difficult to control the frequency modulation width by adjusting the position, and the frequency modulation width cannot be easily controlled.

In such a millimeter wave transmitter / receiver equipped with a millimeter wave signal oscillating unit, it is difficult to adjust the oscillating frequency when the oscillating frequency is shifted. There was a problem that it became difficult.

Accordingly, the present invention has been completed in view of the above circumstances, and has as its object to reduce the difficulty in processing and positioning each part, to facilitate management of processing accuracy and positioning accuracy, and to assemble. And to enable fine adjustment of the oscillation frequency with good reproducibility. Another object is to obtain a high-output high-frequency signal and to easily control a frequency modulation width.

When the present invention is applied to a millimeter wave radar or the like, the performance of the detection range, the detection distance, the target position detection, the target speed detection, and the like is improved and the stability is improved.

[0022]

According to the present invention, a high-frequency diode is provided at one end between parallel plate conductors arranged at an interval of one half or less of a wavelength λ of a millimeter wave signal. A first dielectric line for transmitting the millimeter-wave signal output from the high-frequency diode, and a bias voltage application direction arranged so as to match the direction of the electric field of the millimeter-wave signal, for periodically controlling the bias voltage; A frequency-modulating diode that outputs the millimeter-wave signal as a frequency-modulated millimeter-wave signal for transmission, and one end of the frequency-modulation diode that is electromagnetically coupled to the first dielectric line, or A second dielectric line having one end joined to the dielectric line and transmitting a part of the millimeter wave signal to the mixer side, and a peripheral portion of a ferrite plate disposed in parallel with the parallel plate conductor A first connection unit, a second connection unit, and a third connection unit which are arranged at predetermined intervals and serve as input / output terminals of the millimeter wave signal, respectively, and the millimeters input from one of the connection units; A circulator for outputting a wave signal from another connecting portion adjacent to the clockwise or counterclockwise direction in the plane of the ferrite plate, wherein the first dielectric line has an output terminal for the millimeter wave signal, A circulator to which a connection portion is joined; a third dielectric line joined to a second connection portion of the circulator, which propagates the millimeter wave signal and has a transmission / reception antenna at a tip end; and a third dielectric line received by the transmission / reception antenna. A fourth dielectric line for propagating the reception wave output from the third connection portion of the circulator to the mixer side by propagating through the third dielectric line, and a middle portion of the second dielectric line and the fourth dielectric line; of A millimeter-wave transmission / reception provided with a mixer section for generating an intermediate frequency signal by mixing a part of the millimeter-wave signal and a reception wave by electromagnetically coupling or joining the dielectric line close to the middle of the dielectric line; In the device, the high-frequency diode is provided on a metal member, and the metal member includes a choke-type bias supply line configured to alternately form a wide line and a narrow line to supply a bias voltage to the high-frequency diode, The choke-type bias supply line and a band-shaped conductor that linearly connect the high-frequency diode are provided, and the wide and narrow lines of the choke-type bias supply line have a length of approximately λ / 4, respectively. The length of the strip conductor is substantially ｛(3/4) + n ＋ λ (n is an integer of 0 or more).

According to the present invention, with such a configuration, the choke-type bias supply line and the strip conductor function as a resonator that determines the oscillation frequency of the high-frequency diode, and a separate resonator such as a metal strip resonator becomes unnecessary. Therefore, the positioning between the metal member for high-frequency diode mounting and the dielectric line is facilitated, and the workability in manufacturing is greatly improved. In addition, the loss due to a separate resonator such as a metal strip resonator is eliminated, and the propagation characteristics of a high-frequency signal are improved. As a result, when applied to a millimeter-wave radar or the like, a detection range, a detection distance, and a target position detection are obtained. Thus, the performance of detecting the speed of the target can be improved and the target can be stabilized.

In the present invention, preferably, a dielectric chip having a main surface opposed to the main surface of the strip conductor is disposed close to the strip conductor and electromagnetically coupled.

With the above configuration, the adjustment of the oscillation frequency of the high-frequency diode oscillator is facilitated, and the oscillation frequency is stabilized, so that the production yield is improved and the mass productivity is improved.

[0026] Preferably, the frequency modulation diode in which the bias voltage is applied in a direction parallel to the electric field generated in the strip conductor is arranged close to the strip conductor and electromagnetically coupled.

According to the above configuration, the modulation circuit board provided with the frequency modulation diode on the band-shaped conductor is closely arranged for electromagnetic coupling, and the oscillation frequency is controlled by changing the bias voltage applied to the frequency modulation diode. it can. Further, since it is not necessary to dispose a frequency modulation diode in the dielectric line, loss is small, high output is obtained, and the whole is downsized. Further, by adjusting the position of the frequency modulation diode, the strength of the electromagnetic coupling between the band-shaped conductor, which also functions as a resonator, and the frequency modulation diode can be changed, thereby adjusting the frequency modulation width.

In the present invention, preferably, the frequency modulation diode comprises a wiring board on which a second choke type bias supply line is formed on a main surface and the main surface is installed perpendicular to the parallel plate conductor. A modulation circuit board, which is provided on the main surface of the second choke-type bias supply line, and has an auxiliary substrate having a connection conductor continuous on the main surface of the second choke-type bias supply line. And being connected in the middle of the connection conductor of the auxiliary substrate.

According to the above configuration, the shape of the modulation circuit board as viewed from above is convex, the displacement and the twist are reduced, and the installation stability is extremely enhanced. In addition, the frequency modulation diode can be positioned close to the strip conductor and the position can be adjusted with the bias voltage application direction of the frequency modulation diode matched with the electric field direction of the high-frequency signal, so that the frequency modulation width can be easily adjusted. Become.

Preferably, a distance between the frequency modulation diode and the strip conductor is set to λ or less.

By adjusting within the above range, the output of the high frequency signal can be increased and the frequency modulation width can be increased.

Preferably, a through-hole is formed in the vicinity of the band-shaped conductor of at least one of the parallel plate-shaped conductors, and the through-hole protrudes from the surface between the parallel plate-shaped conductors so as to be electromagnetically coupled with the band-shaped conductor. Is provided.

According to the above configuration, when the frequency adjusting member is disposed close to the strip conductor and electromagnetically coupled, the position of the frequency adjusting member can be finely adjusted easily and with good reproducibility. The resonator length can be finely adjusted, and as a result, the oscillation frequency can be finely adjusted with good reproducibility. In addition, the overall size is reduced by miniaturizing the frequency adjusting member and enabling fine adjustment of the position.

Preferably, a distance between the frequency adjusting member and the band-shaped conductor is λ / 2 or less.

According to the above configuration, the frequency adjusting member and the band-shaped conductor are satisfactorily electromagnetically coupled, and the degree of the electromagnetic coupling is finely adjusted in this state, so that the substantial resonator length of the resonator can be finely adjusted.

Further, in the millimeter wave transceiver according to the present invention, a high-frequency diode is provided at one end between parallel plate conductors arranged at an interval of one half or less of the wavelength λ of the millimeter wave signal. A first dielectric line for transmitting the output millimeter-wave signal, and a bias voltage application direction arranged so as to match the direction of the electric field of the millimeter-wave signal, and the millimeter-wave signal is controlled by periodically controlling the bias voltage. A frequency modulation diode that outputs a wave signal as a millimeter-wave signal for transmission that is frequency-modulated, and one end of the frequency modulation diode is disposed close to the first dielectric line so as to be electromagnetically coupled to the first dielectric line, or is connected to the first dielectric line. One end is joined, a second dielectric line for transmitting a part of the millimeter wave signal to the mixer side, and a predetermined distance between the periphery of a ferrite plate disposed in parallel with the parallel plate conductor. A first connection unit, a second connection unit, and a third connection unit, which are arranged and serve as input / output terminals of the millimeter-wave signal, respectively, and the millimeter-wave signal input from one of the connection units is A circulator for outputting clock signals or counterclockwise signals from another adjacent connection portion in the plane of the ferrite plate, wherein the first connection portion is provided at an output end of the millimeter wave signal of the first dielectric line. A circulator to be joined, a third dielectric line connected to a second connection portion of the circulator for transmitting the millimeter wave signal and having a transmission antenna at a distal end, a receiving antenna at a distal end, and another end A fourth dielectric line provided with a mixer and a third connection portion of the circulator are connected to each other to propagate a millimeter-wave signal received and mixed by the transmission antenna, and to be provided at a tip portion thereof. A fifth dielectric line that attenuates the millimeter-wave signal at the reflection terminating portion, and a middle part of the second dielectric line and a middle part of the fourth dielectric line are brought close to each other and electromagnetically coupled or joined. Thus, in a millimeter wave transceiver provided with a mixer unit that mixes a part of the millimeter wave signal and the reception wave to generate an intermediate frequency signal, the high frequency diode is installed on a metal member, and the metal The member includes a choke-type bias supply line in which a wide line and a narrow line are alternately formed to supply a bias voltage to the high-frequency diode, and a belt-shaped line connecting the choke-type bias supply line and the high-frequency diode in a straight line. And a length of the wide and narrow lines of the choke-type bias supply line is approximately λ / 4, and a length of the strip-shaped conductor. Characterized in that it is substantially {(3/4) + n} λ (n is an integer of 0 or more).

According to the present invention, with such a configuration, the choke-type bias supply line and the strip conductor function as a resonator for determining the oscillation frequency of the high-frequency diode, and a separate resonator such as a metal strip resonator becomes unnecessary. Therefore, the positioning between the metal member for high-frequency diode mounting and the dielectric line is facilitated, and the workability in manufacturing is greatly improved. In addition, the loss due to a separate resonator such as a metal strip resonator is eliminated, and the propagation characteristics of a high-frequency signal are improved. As a result, when applied to a millimeter-wave radar or the like, a detection range, a detection distance, and a target position detection are obtained. Thus, the performance of detecting the speed of the target can be improved and the target can be stabilized. Further, the millimeter-wave signal for transmission does not enter the mixer via the circulator. As a result, the noise of the received signal is reduced, the detection distance is increased, and the transmission characteristic of the millimeter-wave signal is improved.

In the present invention, preferably, a dielectric chip having a main surface facing the main surface of the strip-shaped conductor is arranged close to the strip-shaped conductor and electromagnetically coupled.

With the above configuration, the adjustment of the oscillation frequency of the high-frequency diode oscillator is facilitated, and the oscillation frequency is stabilized, so that the production yield is improved and the mass productivity is improved.

[0040] Preferably, the frequency modulation diode whose bias voltage is applied in a direction parallel to an electric field generated in the strip conductor is disposed close to the strip conductor and electromagnetically coupled.

According to the above configuration, a modulation circuit substrate having a frequency modulation diode provided on a strip conductor is closely arranged for electromagnetic coupling, and the oscillation frequency is controlled by changing a bias voltage applied to the frequency modulation diode. it can. Further, since it is not necessary to dispose a frequency modulation diode in the dielectric line, loss is small, high output is obtained, and the whole is downsized. Further, by adjusting the position of the frequency modulation diode, the strength of the electromagnetic coupling between the band-shaped conductor, which also functions as a resonator, and the frequency modulation diode can be changed, thereby adjusting the frequency modulation width.

In the present invention, preferably, the frequency modulation diode includes a wiring board on which a second choke type bias supply line is formed on a main surface and the main surface is installed perpendicular to the parallel plate conductor. A modulation circuit board, which is provided on the main surface of the second choke-type bias supply line, and has an auxiliary substrate having a connection conductor continuous on the main surface of the second choke-type bias supply line. And being connected in the middle of the connection conductor of the auxiliary substrate.

According to the above configuration, the shape of the modulation circuit board as viewed from above is convex, the displacement and the twist are small, and the installation stability is extremely high. In addition, the frequency modulation diode can be positioned close to the strip conductor and the position can be adjusted with the bias voltage application direction of the frequency modulation diode matched with the electric field direction of the high-frequency signal, so that the frequency modulation width can be easily adjusted. Become.

Preferably, a distance between the frequency modulation diode and the band-shaped conductor is set to λ or less.

By adjusting within the above range, the output of the high frequency signal can be increased and the frequency modulation width can be increased.

Preferably, a through hole is formed in the vicinity of the band-shaped conductor of at least one of the parallel plate conductors, and the through hole protrudes from the surface between the parallel plate conductors and is electromagnetically coupled with the band-shaped conductor. Is provided.

According to the above configuration, when the frequency adjusting member is disposed close to the band-shaped conductor and electromagnetically coupled, the position of the frequency adjusting member can be finely adjusted easily and with good reproducibility. The resonator length can be finely adjusted, and as a result, the oscillation frequency can be finely adjusted with good reproducibility. In addition, the overall size is reduced by miniaturizing the frequency adjusting member and enabling fine adjustment of the position.

Preferably, a distance between the frequency adjusting member and the band-shaped conductor is λ / 2 or less.

According to the above configuration, the frequency adjusting member and the strip conductor are satisfactorily electromagnetically coupled, and the degree of the electromagnetic coupling is finely adjusted in this state, so that the substantial resonator length of the resonator can be finely adjusted.

[0050]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A millimeter wave transceiver according to the present invention will be described below. The millimeter wave transceiver according to the present invention has the same basic configuration as that shown in FIGS. 13 and 14, and will be described with reference to these drawings. FIG. 13 is a plan view of an integrated transmitting antenna and receiving antenna, and FIG.
FIG. 4 is a plan view of an independent transmitting antenna and receiving antenna.

In FIG. 13, reference numeral 41 denotes one parallel plate conductor of the present invention (the other is omitted), and reference numeral 42 denotes a voltage-controlled millimeter-wave signal oscillating section provided at one end of a first dielectric line 43, that is, A voltage-controlled oscillating unit that periodically controls a bias voltage of a variable capacitance diode disposed near the high-frequency diode of the first dielectric line 43 so that the bias voltage application direction matches the electric field direction of the high-frequency signal. Then, by forming a triangular wave, a sine wave or the like, the signal is output as a frequency-modulated millimeter wave signal for transmission.

Reference numeral 43 denotes a first dielectric line for transmitting a millimeter-wave signal obtained by modulating a high-frequency signal output from the high-frequency diode, and 44 is coupled to the first, third, and fourth dielectric lines, respectively. A circulator 45 comprising a ferrite disk 44a and the like having first, second, and third connection portions (not shown) is connected to the second connection portion of the circulator 44 to propagate a millimeter wave signal. And a third dielectric line having a transmitting / receiving antenna 46 at its tip,
Is a transmitting / receiving antenna formed by making the tip of the third dielectric line 45 tapered or the like.

Reference numeral 47 denotes a circulator 44 which is received by the transmitting / receiving antenna 46 and propagates through the third dielectric line 45.
The fourth dielectric line 48 for transmitting the received wave output from the third connection portion to the mixer 49 side is disposed close to the first dielectric line 43 such that one end side is electromagnetically coupled to the first dielectric line 43,
A second dielectric line 48a for transmitting a part of the millimeter wave signal to the mixer 49 side is a non-reflection terminator (terminator) provided at one end of the second dielectric line 48 opposite to the mixer 49. It is. In the figure, M1 mixes a part of the millimeter wave signal and the received wave by bringing the middle of the second dielectric line 48 and the middle of the fourth dielectric line 47 close to each other and electromagnetically coupling them. This is a mixer section for generating an intermediate frequency signal.

The circulator 44 of the present invention is provided at a predetermined interval, for example, at an angle of 120 ° with respect to the center point of the ferrite disk 44a, at the periphery of a pair of ferrite disks 44a disposed in parallel between the parallel plate conductors 41, 41. A first connection unit, a second connection unit, and a third connection unit which are arranged at intervals and are respectively input / output terminals of a millimeter wave signal, and a millimeter wave signal input from one connection unit is Ferrite disk 44
The signal is output from another connecting portion adjacent in the clockwise or counterclockwise direction in the plane a. In addition, the parallel plate conductor 4
A magnet for rotating the wave front of the electromagnetic wave propagating through the ferrite disk 44a is provided at a portion corresponding to the ferrite disk 44a on the outer main surface of the ferrite disk 44a.
Are provided so as to pass substantially vertically (substantially up and down directions). The ferrite disk 44a of the present invention is not limited to a disk-shaped one, but may be a polygonal one or the like.

Further, as another embodiment of the millimeter wave transceiver of the present invention, there is a type shown in FIG. 14 in which a transmitting antenna and a receiving antenna are made independent. In the figure, reference numeral 51 denotes one parallel plate conductor (the other is omitted); 52, a voltage-controlled millimeter-wave signal oscillator provided at one end of a first dielectric line 53; By periodically controlling the bias voltage of the variable capacitance diode disposed near the high-frequency diode of the first dielectric line 53 so as to match the direction of the electric field of the high-frequency signal, the triangular wave, the sine wave, etc. Output as a modulated transmission millimeter wave signal.

Reference numeral 53 denotes a first dielectric line for transmitting a millimeter wave signal obtained by modulating a high-frequency signal output from the high-frequency diode, and reference numeral 54 denotes a first, third, and fifth dielectric line 5.
3, 55, 57 respectively connected to the first, second, third
Ferrite disk 54a having a connection portion (not shown)
A circulator 55 comprising
4, a third dielectric line which is connected to the second connection portion, propagates the millimeter wave signal, and has a transmission antenna 56 at the distal end. The third dielectric line 56 has a tapered tip end of the third dielectric line 55. Transmitting antenna, 57
Is a fifth dielectric line connected to the third connection part of the circulator 54 and provided at the tip with a non-reflection termination 57a for attenuating a millimeter-wave signal for transmission.

Reference numeral 58 denotes a second dielectric line which is disposed in proximity to the first dielectric line 53 so that one end thereof is electromagnetically coupled, and transmits a part of the millimeter wave signal to the mixer 61 side.
Reference numeral 58a denotes a non-reflection terminal provided at one end of the second dielectric line 58 on the opposite side to the mixer 61, and reference numeral 59 denotes a fourth which propagates a reception wave received by the reception antenna 60 to the mixer 61 side. This is a dielectric line. In the figure, M2 mixes a part of the millimeter wave signal and the received wave by bringing the middle of the second dielectric line 58 and the middle of the fourth dielectric line 59 close to each other and electromagnetically coupling them. Is a mixer section for generating an intermediate frequency signal.

In the present invention, in FIG. 13, one end of the second dielectric line 48 is arranged close to the first dielectric line 43 or one end thereof is joined. The first dielectric line 43 has a linear shape, the second dielectric line 48 has an arc shape, and the radius of curvature r of the arc portion is equal to or longer than the wavelength λ of the high-frequency signal. As a result, the loss of the high-frequency signal can be reduced and the high-frequency signal can be branched with an equal output. Also, at the joint, the second dielectric line 4
8 may be linear, the first dielectric line 43 may be arc-shaped, and the radius of curvature r of the arc-shaped portion may be equal to or longer than the wavelength λ of the high-frequency signal. In this case, the same effect as described above can be obtained.

Further, in the mixer 49, the second dielectric line 48 and the fourth dielectric line 47 can be joined. In this case, similarly to the above, the dielectric lines 48 and 47 are connected together. Preferably, one of the joints is formed in an arc shape, and the radius of curvature r of the arc portion is set to be equal to or longer than the wavelength λ of the high-frequency signal. Further, the second dielectric line 48 and the fourth
In this case, at least one of the adjacent portions of the second dielectric line 48 and the fourth dielectric line 47 is connected in the vicinity of the second dielectric line 48 and the fourth dielectric line 47 without being joined to each other. By making the shape of a circular arc, a configuration of close proximity arrangement can be obtained.

Preferably, the radius of curvature r of the joint is 3
If λ is smaller than λ, and if λ is larger than 3λ, the joining structure becomes large and the advantage of miniaturization cannot be obtained. When the radius of curvature r of the junction is set smaller than the wavelength λ, the branching strength to the dielectric line having the arc-shaped junction decreases.

The joint structure between the first dielectric line 43 and the second dielectric line 48, the joint structure between the second dielectric line 48 and the fourth dielectric line 47, and the second
The configuration of close proximity between the dielectric line 48 and the fourth dielectric line 47 is the same as above in the case of FIG.

[0062] These various components are provided between parallel plate conductors arranged at an interval equal to or less than half the wavelength of the millimeter wave signal.

In FIG. 13, a pulse modulation control can be performed by providing a switch in the middle of the first dielectric line 43 and turning it on and off. For example, FIG.
As shown in FIG. 8, a second choke type bias supply line 112 is formed on one main surface of the wiring board 18, and a beam lead type PIN diode or a Schottky barrier diode which is solder-mounted is provided in the middle of the second choke type bias supply line 112. is there.
A bias voltage of a PIN diode or a pulse modulation diode such as a Schottky barrier diode is applied between the circulator 44 and the signal branch portion between the first dielectric line 43 and the second dielectric line 48 by using the wiring board 18. The direction is arranged so as to match the direction of the electric field of the high frequency signal of the LSM mode, and is interposed in the first dielectric line 43. Further, another circulator is interposed in the first dielectric line 43, the first dielectric line 43 is connected to the first and third connection portions, and another dielectric line is connected to the second connection portion. May be connected, and a switch provided with a Schottky barrier diode having a configuration as shown in FIG. 18 may be provided on the end face of the tip of the dielectric line.

In FIG. 14, the circulator 5
4, the transmission antenna 56 may be connected to the distal end of the first dielectric line 53. In this case, although the size is reduced, a part of the received wave is likely to be mixed into the voltage controlled oscillator 52 and cause noise or the like.
The type of FIG. 14 is preferred.

In the type shown in FIG. 14, the second dielectric line 58 is disposed close to the third dielectric line 55 such that one end is electromagnetically coupled to the third dielectric line 55 or the third dielectric line 55
Is connected to one end of the
It may be arranged to propagate to the side. This configuration also has the same functions, functions and effects as those in FIG.

In FIG. 14, a switch having the same configuration as that shown in FIG. 18 is provided in the middle of the first dielectric line 53, and pulse modulation control can be performed by turning it on and off. it can. For example, as shown in FIG. 18, a second choke type bias supply line 112 is formed on one main surface of the wiring board 18, and a beam lead type PIN diode or a Schottky barrier diode mounted by soldering is provided in the middle thereof. Switch. This wiring board 18 is connected to the second dielectric line 58 of the first dielectric line 53.
Between the signal diverter and the circulator 54
The bias voltage application direction of the N diode or the Schottky barrier diode is arranged so as to match the electric field direction of the high frequency signal of the LSM mode, and is interposed in the first dielectric line 53.

Further, another circulator is interposed in the first dielectric line 53, the first dielectric line 53 is connected to the first and third connection portions, and another circulator is connected to the second connection portion. Connect the dielectric line, and on the end face of the tip of the dielectric line,
A switch provided with a Schottky barrier diode having a configuration as shown in FIG. 18 may be provided.

In these millimeter wave transceivers,
The distance between the parallel plate conductors is the wavelength of the millimeter wave signal in the air, which is less than half the wavelength at the operating frequency.

The millimeter wave transceiver shown in FIGS. 13 and 14 is an FMCW (Frequency Modulation Continuous Waves).
The operation principle of the FMCW method is as follows. MODI for input of modulation signal of voltage controlled oscillator
An input signal whose voltage amplitude changes with time in the form of a triangular wave or the like is input to the N terminal, the output signal is frequency-modulated, and the output frequency shift of the voltage controlled oscillator is shifted so as to become a triangular wave or the like. When an output signal (transmission wave) is radiated from the transmission / reception antenna 46 and the transmission antenna 56, if a target is present in front of the transmission / reception antenna 46 and the transmission antenna 56, a time difference corresponding to the reciprocation of the propagation speed of the radio wave is obtained.
The reflected wave (received wave) returns. At this time, mixer 4
The frequency difference between the transmission wave and the reception wave is output to the IFOUT terminal on the output side of the outputs 9 and 61.

By analyzing frequency components such as the output frequency of the IFOUT terminal, Fif = 4R · fm · Δf / c
｛Fif: IF (Intermediate Frequency) output frequency,
R: distance, fm: modulation frequency, Δf: frequency shift width,
c: The distance can be obtained from the relational expression of light speed｝.

As described above, when the present invention is applied to a millimeter wave radar of an automobile, an obstacle around the automobile and other automobiles are irradiated with the millimeter wave, and the reflected wave is synthesized with the original millimeter wave to produce an intermediate frequency signal. By analyzing this intermediate frequency signal, the distance to obstacles and other vehicles, their moving speed, and the like can be measured.

The dielectric line according to the present invention comprises Mg, Al, Si
It is preferable to use ceramics containing the above composite oxide as a main component. The relative permittivity of this ceramic is preferably about 4.5 to 8, and when the relative permittivity is less than 4.5, the conversion of the LSM mode electromagnetic wave to the LSE mode becomes large, and when the relative permittivity exceeds 8, it is 50 GHz or more. When using at the frequency of
The width of the dielectric line must be made very thin, which makes processing difficult, deteriorates the shape accuracy, and causes a problem in strength.

Further, as a material of the dielectric line, the Q value at a working frequency of 50 to 90 GHz is 1000 or more.
It is preferable to use a ceramic mainly containing a composite oxide of g, Al, and Si. This realizes a sufficiently low loss property as a dielectric line used at 50 to 90 GHz included in a microwave band and a millimeter wave band in recent years. In particular,
Cordierite (2MgO.2Al ₂ O ₃ .5Si
O ₂ ) Ceramics are good.

As other materials, resin materials such as Teflon (registered trademark), polystyrene, glass epoxy resin, and the like, alumina ceramics, glass ceramics, and forsterite ceramics may be used. Cordierite ceramics are preferred in terms of strength, miniaturization, reliability, and the like.

For this cordierite ceramic, Y, La, Ce, Pr, Nd, Sm, Eu, Dy,
By containing at least one selected from Ho, Er, Tm, Yb, and Lu, the dielectric properties such as the Q value are improved, and the transmission properties are low.

The dielectric ceramic composition for a dielectric line according to the present invention is manufactured as follows. As the raw material powder, for example, MgCO ₃ powder, Al ₂ O ₃ powder, SiO ₂ powder is used,
These are weighed at a predetermined ratio, wet-mixed and dried, and the mixture is calcined at 1100 to 1300 ° C. in the air, and then pulverized to powder. An appropriate amount of a resin binder is added to the obtained powder and molded.
It is obtained by firing at 0 to 1450 ° C.

Each element of Mg, Al and Si contained in the raw material powder may be any of inorganic compounds such as oxides, carbonates and acetates, or organic compounds such as organic metals. What is necessary is just to become an oxide.

The main component of the dielectric porcelain composition of the present invention is mainly composed of a composite oxide of Mg, Al and Si.
In the range that does not impair the characteristic that the Q value at ~ 90 GHz is 1000 or more, in addition to the above-mentioned elements, impurities of the pulverized ball or the raw material powder are mixed, and the sintering temperature range is controlled and the mechanical properties are improved. Other components may be included. For example, rare earth element compounds, Ba, Sr, Ca, Ni, C
Non-oxides such as oxides such as o, In, Ga and Ti, and nitrides such as silicon nitride. These may include one or more kinds.

The voltage controlled oscillators 42 and 52 using the high-frequency diode oscillator of the present invention will be described below. 1 and 2 show an NRD guide type high-frequency diode oscillator according to the present invention. In these figures, 1 is a pair of parallel plate conductors, 2 is a substantially rectangular parallelepiped metal for mounting (mounting) a Gunn diode 3. A metal member 3 such as a block, 3 is a gun diode which is one kind of a high-frequency diode that oscillates microwaves and millimeter waves, and 4 is provided on one side surface of the metal member 2 to supply a bias voltage to the gun diode 3 A wiring board formed with a choke-type bias supply line 4a functioning as a low-pass filter for preventing leakage of the wire, 5 is a band-shaped conductor such as a metal foil ribbon connecting the choke-type bias supply line 4a and the upper conductor of the Gunn diode 3, and 7 is A dielectric line (first dielectric lines 43 and 53) arranged near the Gunn diode 3 to receive a high-frequency signal and propagate the signal to the outside. A.

In FIG. 2, the choke-type bias supply line 4a comprises a wide line and a narrow line each having a length of approximately λ / 4, and the length of the band-like conductor 5 is approximately ｛. (3/4) + n｝ λ (n is an integer of 0 or more). The length of the strip-shaped conductor 5 is preferably approximately 3λ / 4 to approximately {(3/4) +3} λ, and approximately {(3/4) +3} λ.
If the frequency exceeds the range, the band-shaped conductor 5 becomes longer, bending, twisting, and the like are likely to occur, and variations in characteristics such as oscillation frequency among individual high-frequency diode oscillators increase. There is a problem that a signal having a frequency different from the frequency is generated. More preferably, it is approximately 3λ / 4, approximately {(3/4) +1} λ.

Further, the reason why (｛(3/4) + n｝ λ) is set is that resonance is possible even if it is slightly deviated from ｛(3/4) + n｝ λ. For example, the band-shaped conductor 5 is changed to ｛(3/4)
It may be formed about 10 to 20% longer than + n｝ λ,
In that case, it is considered that part of the length λ / 4 of the first pattern of the choke-type bias supply line 4a in contact with the strip conductor 5 contributes to resonance. Therefore, the length of the strip-shaped conductor 5 can be changed within a range of about {(3/4) + n} λ ± 20%.

The materials of the choke-type bias supply line 4a and the strip-shaped conductor 5 are Cu, Al, Au, Ag,
W, Ti, Ni, Cr, Pd, Pt, etc.
u and Ag have good electric conductivity, small loss,
This is preferable in that the oscillation output increases.

The band-shaped conductor 5 is electromagnetically coupled to the metal member 2 at a predetermined distance from the surface of the metal member 2, and is bridged between the choke type bias supply line 4 a and the Gunn diode 3. That is, one end of the strip-shaped conductor 5 is connected to one end of the choke-type bias supply line 4a by soldering or the like, and the other end of the strip-shaped conductor 5 is connected to the upper conductor of the gun diode 3 by soldering or the like. The middle part except for the connection part is floating in the air.

The metal member 2 is a gun diode 3
Since it is also a metal conductor, the material is not particularly limited as long as it is a metal (including alloy) conductor, and brass (brass: Cu—Zn)
Alloy), Al, Cu, SUS (stainless steel),
It is made of Ag, Au, Pt or the like. The metal member 2 is made of a metal block made entirely of metal, an insulated substrate such as ceramics or plastic, which is entirely or partially metal-plated, and an insulated substrate entirely or partially coated with a conductive resin material or the like. It may be something.

The dielectric line 7 corresponds to the first dielectric lines 43 and 53 shown in FIGS. 13 and 14, and is made of cordierite (2MgO.2A) as described above.
l ₂ O ₃ · 5SiO ₂ ) ceramics (relative permittivity 4-5)
More preferably, they have low loss in the high frequency band. The distance between the Gunn diode 3 and the dielectric line 7 is 1.0
mm or less is preferable, and if it exceeds 1.0 mm, the loss is reduced to exceed the maximum separation width at which electromagnetic coupling is possible.

The high frequency band referred to in the present invention is expressed by the following equation
A high frequency band corresponding to the microwave band and the millimeter wave band of the 00 GHz band, for example, 30 GHz or more, particularly 50 GHz or more, and more preferably 70 GHz or more is suitable.

The high-frequency diode according to the present invention includes an impatt (impact ionization avalan).
che transit time, diode, trap
att: trapped plasma avalanche triggered transi
t) Microwave diodes such as diodes and Gunn diodes and millimeter-wave diodes are preferably used.

Parallel Plate Conductor 1 for NRD Guide of the Present Invention
Are Cu, A in terms of high electrical conductivity and workability.
1, Fe, SUS (stainless steel), Ag, A
A conductor plate made of u, Pt, or the like, or an insulating plate made of ceramic, resin, or the like, on which the conductor layers are formed may be used.

In the present invention, preferably, as shown in the sectional views of FIGS. 3 and 4, a dielectric chip 8 for adjusting the oscillation frequency of a high-frequency signal is arranged close to the strip-shaped conductor 5. In the figure, reference numeral 9 denotes a screwed portion of the gun diode 3. Although the shape of the dielectric chip 8 is not particularly limited, a rectangular parallelepiped, a plate, a quadrangular pyramid, a prism such as a triangular prism having a parallel main surface A facing and close to the main surface of the strip-shaped conductor 5, There is an advantage that the shape is good in a semi-cylindrical shape and the electromagnetic coupling with a high-frequency signal propagating through the band-shaped conductor 5 can be easily controlled by the main surface A. The oscillation frequency can be controlled by adjusting the length L of the main surface A or preparing the dielectric chips 8 having various lengths L and changing the length L. That is, by bringing the dielectric chip 8 close to the band-shaped conductor 5, the substantial resonator length of the resonator composed of the choke type bias supply line 4a and the band-shaped conductor 5 can be finely adjusted. Typical resonator length is ｛(3 /
4) It is possible to make the oscillation frequency slightly lower than + n｝ λ to lower the oscillation frequency.

The dielectric chip 8 is preferably made of cordierite ceramics, alumina ceramics, or the like.
These have low loss in the high frequency band. Further, the distance B between the main surface A of the dielectric chip 8 and the main surface of the strip-shaped conductor 5 is preferably 0.1 mm to 1.0 mm.
The dielectric chip 8 is displaced due to vibration or the like, or undergoes thermal deformation, bending, or the like, comes into contact with the strip-shaped conductor 5, and the high-frequency propagation characteristics are easily changed. If it exceeds 1.0 mm, the electromagnetic coupling between the strip-shaped conductor 5 and the dielectric chip 8 is too weak, and it becomes difficult to control the oscillation frequency.

As another embodiment of the present invention, an example in which the frequency adjusting member is provided inside the metal member 2 is shown in FIGS. 6 and 7 are partial cross-sectional views around the frequency adjusting member. As shown in these figures, holes 9a and 11 are formed at positions corresponding to the strip-shaped conductor 5 of the metal member 2, and the holes 9a and 11 have columnar frequency adjusting members 10 and 11, respectively.
12 are inserted and arranged, and the ends of the frequency adjusting members 10 and 12 project from the surface of the metal member 2 so as to be close to the band-shaped conductor 5 and electromagnetically coupled. These holes 9a and 11 may be through holes. In this case, the frequency adjustment members 10 and 12 can be inserted from the surface of the metal member 2 on the side opposite to the band-shaped conductor 5 to adjust the position. It is.

In the embodiment shown in FIG. 7, the hole 11 is a screw hole having an inner surface threaded, and a screw-shaped frequency adjusting member 12 is screwed into the hole 11 and rotated and inserted to make fine adjustment of the position. It is something that can be done subtly. As a result, more delicate control of the oscillation frequency becomes possible. A plurality of these frequency adjusting members 10 and 12 may be provided at positions corresponding to the band-shaped conductor 5 of the metal member 2. For example, one having a large sectional area and one having a small sectional area are provided. The frequency can be roughly adjusted, and the frequency can be finely adjusted with a small cross-sectional area.

The material of the frequency adjusting members 10 and 12 is cordierite (2MgO.2Al ₂ O ₃ .5Si).
O ₂ ), a dielectric such as alumina (Al ₂ O ₃ ), or C
Metals such as u, Al, Fe, and SUS (stainless steel) are good. The dielectric has a small dielectric loss with respect to a high-frequency signal, and the metal has excellent workability.

As described above, by bringing the frequency adjusting members 10 and 12 close to the band-shaped conductor 5 and adjusting the interval between them,
The coupling capacitance between the band-shaped conductor 5 and the frequency adjusting members 10 and 12 is changed, so that the choke-type bias supply line 4 is changed.
The substantial resonator length of the resonator consisting of a and the band-shaped conductor 5 can be finely adjusted. For example, the electrical resonator length of the strip conductor 5 is made slightly larger than approximately {(3/4) + n} λ,
The oscillation frequency can be reduced.

The distance d (FIG. 6) between the frequency adjusting members 10 and 12 and the strip conductor 5 is preferably set to 0.05 to 0.1 mm. And the strip-shaped conductor 5 are easily in contact with each other,
m, the frequency adjusting members 10 and 12 and the band-shaped conductor 5
Are difficult to electromagnetically couple, and it becomes difficult to control the oscillation frequency.

Further, not only the distance d between the frequency adjusting members 10 and 12 and the strip-shaped conductor 5 but also the frequency adjusting members 10 and 1
The oscillation frequency can also be controlled by adjusting the area of the end face facing the second strip-shaped conductor 5. When the area of the end face is small, fine control can be performed and the frequency modulatable width becomes small. When the area is large, the control becomes relatively coarse, and the frequency modulatable width becomes large.
Preferably, the area of the end face is 0.1 to ² mm ² ,
If it is less than 0.1 mm ^2, it is difficult to control the oscillation frequency,
If it exceeds 2 mm ² , the width of the cross section of the frequency adjusting members 10 and 12 becomes large, making it easy to come into contact with the parallel plate conductor 1, and the portion protruding from the strip-shaped conductor 5 hardly affects the frequency control. More preferably, 0.13 to 0.8 mm ²
It is.

FIGS. 8 and 9 show another embodiment of the present invention. In these figures, reference numeral 20 denotes a varactor diode as a frequency modulation diode provided on the auxiliary substrate 14, and its bias voltage is applied in a direction parallel to the electric field of the electromagnetic field generated in the strip-shaped conductor 5 and radiated into the space. In other words, it is in a state that matches the direction of the electric field, and is disposed close to the strip-shaped conductor 5 and electromagnetically coupled. 21 is the auxiliary substrate 1
The electrode (connection conductor) 22 for connecting the varactor diode 20 formed in 4 is a second choke-type bias supply line formed on the main surface of the wiring board 23. 23 is
A modulation circuit board provided with a varactor diode 20;
A second choke type bias supply line 22 is formed on the main surface, and the main surface is installed perpendicular to the parallel plate conductor 1, and the second choke type bias supply line 22 is provided upright in the middle of the second choke type bias supply line 22. And an auxiliary substrate 14 having, on its main surface, a connecting conductor continuous with the second choke type bias supply line 22.

In the present embodiment, preferably, the distance between the varactor diode 20 of the frequency modulation diode and the strip conductor 5 is set to λ or less. If it is larger than λ, it becomes difficult to modulate the frequency due to a change in the capacitance of the varactor diode 20, and the frequency modulation width becomes smaller. More preferably,
The distance between the frequency modulation diode and the strip conductor 5 is 0.1
If it is less than 0.1 mm, the electrode 21 and the strip-shaped conductor 5 are likely to come into contact with each other.

The position of the varactor diode 20 with respect to the band-shaped conductor 5 is from the center of the band-shaped conductor 5 to the choke-type bias supply line 4a or the Gunn diode 3 side to about 1/4 of the length of the band-shaped conductor 5. Good range. When the varactor diode 20 is closer to the Gunn diode 3 side than the center of the band-shaped conductor 5 by more than 1/4 of the length of the band-shaped conductor 5, the oscillation output is reduced, and the band-shaped conductor 5 is moved to the choke-type bias supply line 4a side. If the length is more than 1/4 of the length, the frequency modulation width becomes smaller.

In the above embodiment, the varactor diode 2
The direction of applying the bias voltage of 0 is set to match the direction of the electric field generated in the strip conductor 5, that is, the direction parallel to the parallel plate conductor 1 and the direction perpendicular to the surface of the strip conductor 5. The component spreads away from the strip conductor 5 and a component in a direction perpendicular to the parallel plate conductor 1 is generated. Therefore, the varactor diode 20 may be provided so that the bias voltage application direction of the varactor diode 20 matches the electric field in the direction perpendicular to the parallel plate conductor 1.

Further, regarding another embodiment of the present invention,
This is shown in FIGS. 11 (a), (b), FIG.
(A) and (b) show a partial plan view and a side sectional view around two types of frequency adjustment members, respectively. As shown in these figures, one parallel plate conductor 1 has a through hole 28 located in the vicinity of the strip-shaped conductor 5 and penetrating in the thickness direction.
A columnar frequency adjusting member 29 which is inserted in the through hole 28 and protrudes from the surface between the parallel plate conductors 1 and is close to the band-shaped conductor 5 and electromagnetically coupled is provided. In this case, the position can be adjusted by inserting the frequency adjusting member 29 from the outside of the parallel plate conductor 1.

In the embodiment shown in FIG. 12, the through-hole 30 is threaded, and a screw-shaped frequency adjusting member 31 is screwed into the through-hole 30 and inserted. Fine adjustment is possible, and finer control of the oscillation frequency becomes possible.

In these embodiments, more delicate control can be performed by making the shape of the projecting portions of the frequency adjusting members 29 and 31 into the high-frequency diode oscillator tapered or tapered. In addition, a plurality of protrusions having variously changed shapes can be prepared and used according to desired characteristics. For example, a plurality of types of frequency adjusting members 29 and 31 are provided so that various control can be performed on the change width of the oscillation frequency, the change rate of the oscillation frequency, the Q characteristic, and the like.
May be used. These frequency adjusting members 29, 31
May be provided at a position close to the band-shaped conductor 5, for example, one having a large cross-sectional area and one having a small cross-sectional area are provided, and the frequency is roughly adjusted by using a large cross-sectional area. The frequency can be fine-tuned.

Further, through holes are provided in both the pair of parallel plate conductors 1 and 1 facing each other, and a single frequency adjusting member 29 or 31 is inserted into those through holes, or It is also possible to provide through holes that do not face each other, and insert the frequency adjusting members 29 and 31 one by one into those through holes. In the above embodiment, the column-shaped frequency adjustment member 29 has been described. The shape may be Further, the cross-sectional shape of the frequency adjusting member 29 may be a convex shape, an inverted T type, or the like, and a stopper for limiting the protruding length may be provided at one end. Alternatively, the interior of the frequency adjusting members 29 and 31 may be hollowed to reduce the weight and cost, and the frequency adjusting member 2 may be used.
9, 31 may be composed of a plurality of types of materials.

The material of the frequency adjusting members 29 and 31 is cordierite (2MgO.2Al ₂ O ₃ .5Si).
A dielectric such as O ₂ ) ceramics or alumina (Al ₂ O ₃ ) ceramics or a metal such as Cu, Al, Fe, SUS (stainless steel) is preferable. Has excellent workability.

As described above, by bringing the frequency adjusting members 29 and 31 close to the band-shaped conductor 5 and adjusting the protrusion length of the frequency adjusting members 29 and 31, that is, the electromagnetic coupling length, the band-shaped conductor 5 is adjusted.
The coupling capacitance between the frequency adjusting members 29 and 31 is changed, and as a result, the substantial resonator length of the resonator including the choke-type bias supply line 4a and the band-shaped conductor 5 can be finely adjusted. For example, it is possible to reduce the oscillation frequency by making the electrical resonator length of the band-shaped conductor 5 slightly larger than approximately {(3/4) + n} λ.

The distance between the frequency adjusting members 29 and 31 and the strip conductor 5 is preferably λ / 2 or less, more preferably λ / 4 or less. For example, when the oscillation frequency is about 77 GHz, the thickness is preferably 0.05 to 2 mm. If it is less than 0.05 mm, the frequency adjusting members 29 and 31 and the strip-shaped conductor 5 are easily in contact with each other. If it exceeds 2 mm, the frequency adjusting members 29 and 31 and the strip-shaped conductor 5 are hardly electromagnetically coupled, and it is difficult to control the oscillation frequency. become.

Further, not only the distance between the frequency adjusting members 29, 31 and the strip-shaped conductor 5, but also the frequency adjusting members 29, 31
The oscillation frequency can also be controlled by adjusting the area of the surface facing the band-shaped conductor 5. When the area of the facing surface is small, fine control can be performed and the frequency modulation width can be reduced. When the area of the surface to be controlled is large, the control is relatively coarse, and the frequency modulatable width becomes large. Preferably, the area of the facing surface is 0.5 to ³ mm ²
If it is less than 0.5 mm ^2, it is difficult to control the oscillation frequency, and if it exceeds 3 mm ² , the frequency adjusting members 9 and 11
And the dielectric line 6 are electromagnetically coupled to each other and become large to a degree that cannot be ignored.

Thus, in the millimeter wave transceiver according to the present invention, the choke-type bias supply line and the strip conductor function as a resonator that determines the oscillation frequency of the high-frequency diode, and a separate resonator such as a metal strip resonator is not required. Therefore, the positioning between the metal member for the high-frequency diode mount and the dielectric line is facilitated, and the workability in manufacturing is greatly improved. In addition, loss due to a separate resonator such as a metal strip resonator is eliminated, and the propagation characteristics of a high-frequency signal are improved.
As a result, when applied to a millimeter wave radar or the like, the performance of the detection range, the detection distance, the target position detection, the target speed detection, and the like is improved and the performance is stable. Furthermore, the present invention has excellent transmission characteristics of millimeter wave signals,
The detection distance of the millimeter wave radar can be increased (FIG. 13), and the transmission millimeter wave signal does not enter the mixer via the circulator, and as a result, the noise of the reception signal is reduced and the detection distance is reduced. Is further increased (as shown in FIG. 14).

The present invention is not limited to the above embodiment, and various changes may be made without departing from the spirit of the present invention.

[0111]

According to the present invention, there is provided a millimeter-wave transceiver in which a transmitting antenna and a receiving antenna are integrated, or a millimeter-wave transceiver in which the transmitting antenna and the receiving antenna are independent, wherein the high-frequency diode is provided on a metal member. The metal member includes a choke-type bias supply line in which a wide line and a narrow line are alternately formed to supply a bias voltage to a high-frequency diode, and a band-shaped conductor that linearly connects the choke-type bias supply line and the high-frequency diode. And the lengths of the wide and narrow choke-type bias supply lines are approximately λ / 4, and the length of the strip conductor is approximately ｛(3/4) + n｝ λ (n is (An integer of 0 or more), the choke-type bias supply line and the strip conductor function as a resonator that determines the oscillation frequency of the high-frequency diode. However, a separate resonator such as a metal strip resonator is not required, so that the positioning of the metal member for the high-frequency diode mount and the dielectric line is facilitated, and the workability in manufacturing is greatly improved. In addition, loss due to a separate resonator such as a metal strip resonator is eliminated, and the propagation characteristics of a high-frequency signal are improved. As a result, when applied to a millimeter wave radar or the like, a detection range, a detection distance, and a target position detection are obtained. Thus, the performance of detecting the speed of the target can be improved and the target can be stabilized.

Further, according to the present invention, preferably, the oscillation frequency of the high-frequency diode oscillator is adjusted by arranging a dielectric chip having a main surface facing the main surface of the strip conductor close to the strip conductor and electromagnetically coupling the dielectric chip. As a result, the oscillation frequency becomes stable, so that the production yield is improved and the mass productivity is improved.

Preferably, a frequency modulation diode whose bias voltage is applied in a direction parallel to an electric field generated in the band-shaped conductor is disposed close to the band-shaped conductor and electromagnetically coupled, so that the frequency-modulation diode is applied to the band-shaped conductor. The oscillation frequency can be controlled by arranging the modulation circuit board provided with in close proximity for electromagnetic coupling and changing the bias voltage applied to the frequency modulation diode. Further, since it is not necessary to dispose a frequency modulation diode in the dielectric line, loss is small, high output is obtained, and the whole is downsized. Further, by adjusting the position of the frequency modulation diode, the strength of the electromagnetic coupling between the band-shaped conductor, which also functions as a resonator, and the frequency modulation diode can be changed, thereby adjusting the frequency modulation width.

Preferably, the frequency modulation diode comprises a wiring board having a second choke-type bias supply line formed on the main surface and having the main surface installed perpendicular to the parallel plate conductor. An auxiliary substrate having a connection conductor on the main surface thereof, which is provided in the middle of the type bias supply line and is continuous with the second choke type bias supply line, and is connected to the auxiliary substrate. By being connected in the middle of the conductor, the shape of the modulation circuit board in a top view becomes convex, the displacement and torsion are reduced, and the installation stability becomes extremely high. Also,
In a state where the bias voltage application direction of the frequency modulation diode matches the direction of the electric field of the high-frequency signal, the frequency modulation diode can be arranged close to the strip conductor and the position can be adjusted, so that the frequency modulation width can be easily adjusted.

Preferably, by setting the distance between the frequency modulation diode and the strip conductor to λ or less, the output of the high-frequency signal can be increased and the frequency modulation width can be widened.

Preferably, a through-hole is formed in the vicinity of the band-shaped conductor of at least one of the parallel plate conductors, and the column-shaped frequency adjusting member protrudes from the through-hole to the surface between the parallel plate conductors and electromagnetically couples with the band-shaped conductor. Is provided, when the frequency adjusting member is arranged close to the band-shaped conductor and electromagnetically coupled, the position of the frequency adjusting member can be finely adjusted easily and with good reproducibility. The resonator length can be finely adjusted, and as a result, the oscillation frequency can be finely adjusted with good reproducibility. In addition, the overall size is reduced by miniaturizing the frequency adjusting member and enabling fine adjustment of the position.

Preferably, when the distance between the frequency adjusting member and the band-shaped conductor is λ / 2 or less, the frequency adjusting member and the band-shaped conductor are satisfactorily electromagnetically coupled to each other, and in this state, the degree of electromagnetic coupling is finely adjusted. By doing so, the substantial resonator length of the resonator can be finely adjusted.

[Brief description of the drawings]

FIG. 1 is a perspective view of an embodiment of a high-frequency diode oscillator for a millimeter wave transceiver according to the present invention.

FIG. 2 is a plan view showing a choke-type bias supply line and a strip conductor of the high-frequency diode oscillator of FIG.

FIG. 3 is a perspective view of another embodiment of the high-frequency diode oscillator of the present invention.

FIG. 4 is a partial cross-sectional view of FIG. 3 around a dielectric chip, a strip conductor, and a Gunn diode.

FIG. 5 is a perspective view of another embodiment of the high-frequency diode oscillator of the present invention.

FIG. 6 is a partial cross-sectional view around a frequency adjustment member in FIG.

FIG. 7 is a partial sectional view around another frequency adjusting member in FIG. 5;

FIG. 8 is a perspective view of another embodiment of the high-frequency diode oscillator of the present invention.

FIG. 9 is a perspective view of a modulation circuit board provided with a frequency modulation diode in FIG.

FIG. 10 is a perspective view of another embodiment of the high-frequency diode oscillator of the present invention.

11A is a plan view of a choke-type bias supply line, a band-shaped conductor and a columnar frequency adjusting member, and FIG. 10B is a side sectional view of FIG.

12A is a plan view of a choke-type bias supply line, a band-shaped conductor and a screw-shaped frequency adjusting member, and FIG. 12B is a side sectional view of FIG.

FIG. 13 is a plan view of the inside of an NRD guide type millimeter wave transceiver equipped with the transmission / reception antenna of the present invention.

FIG. 14 is a plan view of the inside of an NRD guide type millimeter wave transceiver including a transmission antenna and a reception antenna according to the present invention.

FIG. 15 is a perspective view of a conventional high-frequency diode oscillator.

16 is a plan view showing a choke-type bias supply line and a strip conductor of the high-frequency diode oscillator of FIG.

FIG. 17 is a perspective view of a conventional high-frequency diode oscillator capable of modulating an oscillation frequency.

18 is a perspective view of a wiring board provided with the varactor diode for frequency modulation of FIG. 17;

[Explanation of symbols]

 1: parallel plate conductor 2: metal member 3: gun diode 4: wiring board 5: strip conductor 7: dielectric line 43: first dielectric line 44: circulator 46: transmitting / receiving antenna 45: third dielectric line 47 : Fourth dielectric line 48: Second dielectric line 49: Mixer

Claims (14)

[Claims] 1. A high-frequency diode is provided at one end between parallel plate conductors arranged at an interval of one half or less of a wavelength λ of a millimeter-wave signal, and the millimeter-wave signal output from the high-frequency diode is propagated. A first dielectric line, which is arranged so that a bias voltage application direction coincides with an electric field direction of the millimeter wave signal, and controls the bias voltage periodically to transmit the millimeter wave signal by frequency modulation. A frequency modulation diode that outputs as a millimeter wave signal, and one end is disposed close to the first dielectric line so as to be electromagnetically coupled, or one end is joined to the first dielectric line, and the millimeter wave A second dielectric line for transmitting a part of the signal to the mixer side; and a second dielectric line disposed at a predetermined interval on a peripheral portion of a ferrite plate disposed in parallel with the parallel plate conductor and each of the millimeter lines A first connection portion, a second connection portion, and a third connection portion serving as signal input / output terminals, wherein the millimeter wave signal input from one of the connection portions is clocked in a plane of a ferrite plate; A circulator for outputting an output from another connection portion adjacent in a clockwise or counterclockwise direction, wherein the first connection portion is joined to an output end of the millimeter wave signal of the first dielectric line; A third dielectric line that is joined to the second connection of the circulator and propagates the millimeter wave signal and has a transmitting and receiving antenna at the tip end; and a third dielectric line that is received by the transmitting and receiving antenna and propagates through the third dielectric line. A fourth dielectric line for transmitting a reception wave output from a third connection portion of the circulator to the mixer side, and a middle of the second dielectric line and a middle of the fourth dielectric line are brought close to each other. Electromagnetic coupling Or a mixer unit that mixes a part of the millimeter wave signal and the received wave to generate an intermediate frequency signal by causing or joining the millimeter wave signal, wherein the high frequency diode is installed on a metal member. The metal member includes a choke-type bias supply line in which a wide line and a narrow line are alternately formed to supply a bias voltage to the high-frequency diode, and a straight line connecting the choke-type bias supply line and the high-frequency diode. And the length of the wide and narrow lines of the choke-type bias supply line is approximately λ / 4, and the length of the band-like conductor is approximately ｛(3 /
4) A millimeter wave transceiver, wherein + n｝ λ (n is an integer of 0 or more). 2. The millimeter-wave transceiver according to claim 1, wherein a dielectric chip having a main surface facing the main surface of the strip conductor is disposed close to the strip conductor and electromagnetically coupled. 3. The frequency modulation diode in which a bias voltage is applied in a direction parallel to an electric field generated in the band-shaped conductor is disposed close to the band-shaped conductor and electromagnetically coupled. Millimeter wave transceiver. 4. A frequency-modulating diode, comprising: a wiring board having a second choke-type bias supply line formed on a main surface thereof and having the main surface installed perpendicular to the parallel plate conductor; An auxiliary substrate provided on a principal surface of the choke-type bias supply line, the auxiliary circuit having a connection conductor connected to the second choke-type bias supply line on its main surface; 4. The millimeter wave transceiver according to claim 3, wherein the transceiver is connected in the middle of the connection conductor. 5. The millimeter wave transceiver according to claim 3, wherein an interval between the frequency modulation diode and the strip conductor is set to λ or less. 6. A columnar frequency in which at least one of the parallel plate conductors has a through-hole formed in the vicinity of the band-shaped conductor and protrudes from the through-hole on the surface between the parallel plate conductors and is electromagnetically coupled to the band-shaped conductor. The millimeter wave transceiver according to claim 1, further comprising an adjusting member. 7. The millimeter wave transceiver according to claim 6, wherein a distance between said frequency adjusting member and said strip conductor is λ / 2 or less. 8. A high-frequency diode is provided at one end between parallel plate conductors arranged at an interval equal to or less than half the wavelength λ of the millimeter-wave signal, and the millimeter-wave signal output from the high-frequency diode is propagated. A first dielectric line, which is arranged so that a bias voltage application direction coincides with an electric field direction of the millimeter wave signal, and controls the bias voltage periodically to transmit the millimeter wave signal by frequency modulation. A frequency modulation diode that outputs as a millimeter wave signal, and one end is disposed close to the first dielectric line so as to be electromagnetically coupled, or one end is joined to the first dielectric line, and the millimeter wave A second dielectric line for transmitting a part of the signal to the mixer side; and a second dielectric line disposed at a predetermined interval on a peripheral portion of a ferrite plate disposed in parallel with the parallel plate conductor and each of the millimeter lines A first connection portion, a second connection portion, and a third connection portion serving as signal input / output terminals, wherein the millimeter wave signal input from one of the connection portions is clocked in a plane of a ferrite plate; A circulator for outputting an output from another connection portion adjacent in a clockwise or counterclockwise direction, wherein the first connection portion is joined to an output end of the millimeter wave signal of the first dielectric line; A third dielectric line connected to a second connection portion of the circulator for transmitting the millimeter wave signal and having a transmission antenna at a distal end; a reception antenna at a distal end; and a mixer at the other end. A fourth dielectric line, which is connected to a third connection portion of the circulator, propagates the millimeter-wave signal received and mixed by the transmission antenna, and transmits the millimeter-wave signal at a non-reflection terminal portion provided at a tip end; A part of the millimeter wave signal is obtained by electromagnetically coupling or joining a fifth dielectric line to be attenuated and a middle part of the second dielectric line and a middle part of the fourth dielectric line so as to be close to each other. And a mixer unit for generating an intermediate frequency signal by mixing the received wave and the received wave, wherein the high-frequency diode is installed on a metal member, and the metal member has a wide line and a wide line. A choke-type bias supply line in which narrow lines are alternately formed to supply a bias voltage to the high-frequency diode; The length of the wide and narrow lines of the bias supply line is approximately λ / 4, and the length of the strip conductor is approximately ｛(3 /
4) A millimeter wave transceiver, wherein + n｝ λ (n is an integer of 0 or more). 9. The millimeter wave transceiver according to claim 8, wherein a dielectric chip having a main surface opposed to the main surface of said strip conductor is disposed close to said strip conductor and electromagnetically coupled. 10. The frequency modulation diode in which a bias voltage is applied in a direction parallel to an electric field generated in the band-shaped conductor, and the frequency modulation diode is disposed close to the band-shaped conductor and electromagnetically coupled. Millimeter wave transceiver. 11. The frequency modulation diode includes: a wiring board having a second choke-type bias supply line formed on a main surface and having the main surface installed perpendicular to the parallel plate conductor; An auxiliary substrate provided on a principal surface of the choke-type bias supply line, the auxiliary circuit having a connection conductor connected to the second choke-type bias supply line on its main surface; 11. The millimeter-wave transceiver according to claim 10, wherein the millimeter-wave transceiver is connected in the middle of the connection conductor. 12. The apparatus according to claim 1, wherein a distance between the frequency modulation diode and the strip conductor is set to λ or less.
The millimeter wave transceiver according to claim 11 or claim 12. 13. A columnar frequency which forms a through hole near at least one of the parallel plate conductors in the vicinity of the band-shaped conductor, and protrudes from the through hole on the surface between the parallel plate conductors to electromagnetically couple with the band-shaped conductor. The millimeter wave transceiver according to claim 8, further comprising an adjusting member. 14. The millimeter wave transceiver according to claim 13, wherein a distance between said frequency adjusting member and said strip conductor is λ / 2 or less.