JP2002009341A5 - - Google Patents
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- Publication number
- JP2002009341A5 JP2002009341A5 JP2000191780A JP2000191780A JP2002009341A5 JP 2002009341 A5 JP2002009341 A5 JP 2002009341A5 JP 2000191780 A JP2000191780 A JP 2000191780A JP 2000191780 A JP2000191780 A JP 2000191780A JP 2002009341 A5 JP2002009341 A5 JP 2002009341A5
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- JP
- Japan
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000191780A JP4576674B2 (ja) | 2000-06-26 | 2000-06-26 | Ｉｉｉ族窒化物系化合物半導体素子 |
| US09/885,046 US6841808B2 (en) | 2000-06-23 | 2001-06-21 | Group III nitride compound semiconductor device and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000191780A JP4576674B2 (ja) | 2000-06-26 | 2000-06-26 | Ｉｉｉ族窒化物系化合物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002009341A JP2002009341A (ja) | 2002-01-11 |
| JP2002009341A5 true JP2002009341A5 (sh) | 2007-05-31 |
| JP4576674B2 JP4576674B2 (ja) | 2010-11-10 |
Family
ID=18691023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000191780A Expired - Fee Related JP4576674B2 (ja) | 2000-06-23 | 2000-06-26 | Ｉｉｉ族窒化物系化合物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4576674B2 (sh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7229499B2 (en) | 2003-08-22 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| TWI288491B (en) | 2006-03-02 | 2007-10-11 | Nat Univ Chung Hsing | High extraction efficiency of solid-state light emitting device |
| JP2011129718A (ja) | 2009-12-17 | 2011-06-30 | Showa Denko Kk | 基板、テンプレート基板、半導体発光素子、半導体発光素子の製造方法、半導体発光素子を用いた照明装置および電子機器 |
| WO2011115171A1 (ja) * | 2010-03-18 | 2011-09-22 | 国立大学法人京都工芸繊維大学 | 光吸収材料およびそれを用いた光電変換素子 |
| US8624279B2 (en) | 2011-06-02 | 2014-01-07 | Sino-American Silicon Products Inc. | Light emitting diode substrate and light emitting diode |
| US9873170B2 (en) | 2015-03-24 | 2018-01-23 | Nichia Corporation | Method of manufacturing light emitting element |
| JP6146455B2 (ja) * | 2015-03-24 | 2017-06-14 | 日亜化学工業株式会社 | 発光素子の製造方法 |
| JP6785455B2 (ja) * | 2018-05-11 | 2020-11-18 | パナソニックＩｐマネジメント株式会社 | 発光ダイオード素子、及び発光ダイオード素子の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2769924B1 (fr) * | 1997-10-20 | 2000-03-10 | Centre Nat Rech Scient | Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche |
| JP3557894B2 (ja) * | 1998-03-18 | 2004-08-25 | 日亜化学工業株式会社 | 窒化物半導体基板および窒化物半導体素子 |
| US6194742B1 (en) * | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
| JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
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2000
- 2000-06-26 JP JP2000191780A patent/JP4576674B2/ja not_active Expired - Fee Related