JP2002009141A - Vacuum treatment apparatus having electrostatic attraction mechanism and operation control method for electrostatic attraction mechanism - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a quality of a substrate by suppressing the generation of particles due to electrostatic attraction and by improving the yield of the product, without decreasing a fixing performance of the substrate by using an electrostatic attraction mechanism and heating/cooling performance in a vacuum treatment apparatus having the electrostatic attraction mechanism. SOLUTION: This apparatus comprises the electrostatic attraction mechanism for mounting and fixing the substrate, and is constituted so as to comprise a radiation thermometer 34 for detecting the temperature of the substrate 13, a temperature sensor 17 for detecting the temperature of the electrostatic attraction mechanism, and a comparator 38 that outputs a signal for operating the electrostatic attraction mechanism when the detected signals which each outputs are input and a difference of two detected signals is in a range satisfying a prescribed condition. The substrate is placed on the electrostatic attraction mechanism, if the electrostatic attraction mechanism is operated and the substrate is fixed and when the difference between the temperature of the substrate and the temperature of the electrostatic attraction mechanism became small to a degree of being included in a prescribed range, the electrostatic attraction mechanism is operated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus having an electrostatic attraction mechanism and a method of controlling the operation of the electrostatic attraction mechanism. Vacuum deposition equipment, sputtering equipment,
The present invention relates to a vacuum processing apparatus suitable for using a thin film forming apparatus such as a CVD apparatus and a thin film processing apparatus such as an etching apparatus.

[0002]

2. Description of the Related Art A vacuum processing apparatus provided with an electrostatic suction mechanism is:
For example, the inside is brought into a required vacuum state, and a substrate (or wafer) to be processed is mounted (or placed) on the electrostatic chuck mechanism, fixed by electrostatic chucking force, and processed on the surface of the substrate. It is used to apply. In order to create such a state and generate a processing action, a vacuum processing apparatus is a device for exhausting a vacuum (reduced pressure state) required for processing, and a substrate is loaded into or removed from a container. And a device for introducing a process gas, a device for generating plasma, and the like. Applications of such a vacuum processing apparatus include a vacuum deposition apparatus for forming a thin film on a substrate in a vacuum, a sputtering apparatus, and a CVD apparatus. It is also used in an apparatus for etching a thin film or an insulating film formed on a substrate. The electrostatic suction mechanism is a device for fixing a substrate to be processed on a substrate holding table at a predetermined position inside a vacuum processing apparatus. In the substrate holding table, the substrate fixed on the electrostatic attraction mechanism is usually cooled or heated by a cooling device or a heating device provided in the electrostatic attraction mechanism. When a substrate is mounted on the upper surface of a substrate stage (electrostatic suction plate (ESC plate)) using an electrostatic suction mechanism, heat is applied because the back surface of the substrate is attached to the upper surface of the substrate stage by electrostatic suction force. This has the advantage that the conductivity is improved and the substrate temperature rise and the substrate cooling performance are greatly improved.

When a vacuum processing apparatus having an electrostatic suction mechanism is used for a sputtering apparatus, the internal pressure is, for example, 1
The pressure is reduced from 0 ^-7 Torr to 10 ^-9 Torr. When a heating device (heater) is provided inside the electrostatic attraction mechanism and the temperature of the substrate is variously changed by the heating process of the heating device, various thin films having different film qualities can be produced. As described above, the vacuum processing apparatus provided with the electrostatic suction mechanism is an effective apparatus for rapidly bringing a substrate to a predetermined temperature when used as a substrate film forming apparatus.

On the other hand, when the above-mentioned vacuum processing apparatus is used for an etching apparatus, on the other hand, in order to keep the substrate temperature low, the substrate is cooled for the purpose of cooling so that the substrate temperature does not rise more than necessary due to the heat load from the plasma. An electroadsorption mechanism will be used. Further, in order to enhance the cooling performance, a configuration in which a gas flows between the substrate and the substrate stage to perform gas cooling is often used.

[0005] Documents relating to an electrostatic chuck mechanism for fixing a substrate on a substrate holding table in a vacuum processing apparatus for processing a substrate include, for example, Japanese Patent Application Laid-Open No. 10-277.
80 and JP-A-11-31737. The former document discloses a technique for preventing a particle from adhering to a wafer (substrate) by applying a DC voltage for operating an electrostatic chuck (electrostatic chucking mechanism) only when performing high-frequency discharge. I have. The latter document discloses a voltage applied to an electrode of an electrostatic chuck mechanism in order to greatly reduce particles generated between the wafer and the stage when the wafer (substrate) is placed and fixed on an electrostatic chuck stage in a processing chamber. Discloses a technique devising a method of applying a voltage.

[0006]

In a vacuum processing apparatus provided with the above-mentioned electrostatic chucking mechanism, a substrate to be processed is mounted on the electrostatic chucking mechanism, and for example, a substrate provided inside the electrostatic chucking mechanism is provided with a substrate. By applying different voltages to the two electrodes from a power source, an electrostatic force is generated, and the substrate is strongly attracted to a substrate stage that fixes the substrate by electrostatic attraction. However, the structure for strongly fixing the substrate, on the contrary, causes a problem that the back surface of the substrate is scratched, resulting in abnormal generation of particles.

FIG. 4 is a graph showing the difference in the number of generated particles between the case where the substrate is merely placed on the electrostatic chucking mechanism and the case where the substrate is fixed by the electrostatic chucking action of the electrostatic chucking mechanism. At this time, the substrate is in a state heated to 300 ° C. The vertical axis of the graph indicates the number of generated particles, and the size (particle size) of the particles to be detected is 0.3.
μm or more. As is clear from the graph of FIG. 4, when the substrate is merely placed on the upper surface of the electrostatic chucking mechanism, the number of generated particles is less than 10. On the other hand, when the electrostatic adsorption mechanism is operated to adsorb and fix, a large amount of 10 ⁴ particles are generated.

[0008] The number of particles generated when the substrate is fixed by operating the electrostatic chucking mechanism depends on the magnitude of the voltage applied to the electrodes in the electrostatic chucking mechanism. FIG. 5 shows this relationship. As is clear from FIG. 5, when the applied voltage is reduced, the number of generated particles is also reduced. However, when the applied voltage is reduced, the electrostatic attraction force is weakened, and the force for bringing the substrate into close contact with the surface of the substrate stage is weakened. As a result, there arises a problem that the temperature increasing performance or the cooling performance of the substrate decreases. In applications where gas is interposed between the substrate and the substrate stage surface of the electrostatic adsorption mechanism to utilize the heat conduction of the gas, the adsorption force is weak, and the substrate is easily detached from the mounting surface of the substrate adsorption mechanism. Problems also occur.

In view of the above, the cause of the generation of particles is based on the temperature difference between the substrate and the substrate stage when the substrate is pressed against the substrate stage surface by generating an electrostatic attraction force by the electrostatic attraction mechanism. It is assumed that a difference occurs due to a difference in the coefficient of thermal expansion and particles are generated. Therefore, in order to solve this, it is expected to reduce the applied voltage to reduce the pressing force as described above, or to create a state in which the above-described displacement does not occur.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and in a vacuum processing apparatus provided with an electrostatic chucking mechanism, without deteriorating the substrate fixing performance and the heating / cooling performance by the electrostatic chucking mechanism. Patent application title: Vacuum processing apparatus with electrostatic chuck mechanism capable of suppressing generation of particles due to electrostatic chuck, improving product yield, and improving substrate quality, and operation control method for electrostatic chuck mechanism Is to provide.

[0011]

The present invention is configured as follows to achieve the above object.

A vacuum processing apparatus having an electrostatic suction mechanism according to the present invention (corresponding to claim 1) includes an electrostatic suction mechanism for mounting and fixing a substrate, and detects a temperature of the substrate. A first temperature sensor (a non-contact radiation thermometer) and a second temperature sensor (preferably, a surface temperature) of the electrostatic chuck mechanism.
A temperature sensor, a detection signal output by the first temperature sensor, and a detection signal output by the second temperature sensor are input, and the electrostatic adsorption mechanism is operated when a difference between the two detection signals falls within a range satisfying a predetermined condition. And a comparator that outputs a signal. According to the present invention, when the substrate is placed on the electrostatic attraction mechanism and the substrate is fixed by operating the electrostatic attraction mechanism, a difference between the substrate temperature and the temperature of the electrostatic attraction mechanism is included in a predetermined range. When it becomes small enough to operate, the electrostatic suction mechanism is operated. As a result, when the substrate is fixed on the electrostatic attraction mechanism, the temperature of the substrate and the electrostatic attraction mechanism are relatively close to each other, the displacement due to the difference in the coefficient of thermal expansion is reduced, and the scratches on the substrate are reduced. As a result, the number of generated particles can be reduced.

In the above configuration, preferably, a heating source for heating the substrate at least before the operation of the electrostatic attraction mechanism is provided (corresponding to claim 2). By heating the substrate with a separately provided heating source, the temperature of the substrate can be quickly brought close to the temperature of the electrostatic chucking mechanism, and the temperature difference between the substrate and the electrostatic chucking mechanism can be reduced quickly. The operation of the electrostatic attraction mechanism can be accelerated.

In the above configuration, the range satisfying the above predetermined condition is that the difference between the substrate temperature and the temperature of the electrostatic attraction mechanism is 5 degrees.
The temperature is within a range of 0 ° C. or less (corresponding to claim 3), or the temperature range of the substrate is within 80% of the temperature of the electrostatic attraction mechanism (corresponding to claim 4).

An operation control method for an electrostatic attraction mechanism according to the present invention (corresponding to claim 5) is an operation control method for an electrostatic attraction mechanism for mounting and fixing a substrate in a vacuum environment. In this method, a temperature difference between the electrostatic chucking mechanisms is obtained, and when the difference falls within a range satisfying a predetermined condition, the operation of the electrostatic chucking is performed to fix the substrate. Further, the range satisfying the predetermined condition is a range in which the difference between the temperature of the substrate and the temperature of the electrostatic chucking mechanism is 50 ° C. or less (corresponding to claim 6), or the temperature of the substrate is equal to or lower than the temperature of the electrostatic chucking mechanism. The range is within 80% of the temperature (corresponding to claim 7).

[0016]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows an internal structure of a vacuum processing apparatus according to a typical embodiment of the present invention and related peripheral structures. This vacuum processing apparatus is configured as a sputtering apparatus (hereinafter, referred to as "sputter apparatus") as an example. Therefore, an apparatus configuration for performing a sputtering process on the surface of the substrate is provided. Although the vacuum processing apparatus is originally made precisely as a mechanical device, FIG. 1 is schematically drawn to the extent that the present invention is not understood, and is not strict in view of the mechanical device.

First, the configuration of the apparatus will be described. In FIG. 1, the sputtering apparatus has a vacuum vessel 11 having an internal space for performing a sputtering process. The vacuum vessel 11 has a substantially cylindrical body on the side surface 11a, and includes a ceiling 11b and a bottom surface 11c. The inside of the vacuum vessel 11 is made airtight, an exhaust port (not shown) for making the inside a required vacuum state is formed, and an exhaust mechanism (not shown) connected to the exhaust port is provided. ing.

At substantially the center of the bottom surface 11c of the vacuum vessel 11, a substrate holder 12 is provided. Substrate holder 12
Has an upper surface serving as a substrate mounting surface (substrate mounting surface), and has an electrostatic attraction mechanism therein. 13 is a substrate holding table 1
2 is a substrate which is mounted on the upper surface and is fixed by the electrostatic attraction force of the electrostatic attraction mechanism. The substrate holder 12 is provided on the lower holder 1.
4 and an upper electrostatic attraction plate 15. The holder 14 and the electrostatic attraction plate 15 have a disk shape. A heater 16 is embedded in the holder 14. Two electrodes 15 a and 15 b are built in the electrostatic attraction plate 15. The electrostatic attraction plate 15 is made of an insulating member. Electrostatic suction plate 15
The electrodes 15a and 15b and a power supply mechanism to be described later constitute an electrostatic chucking mechanism. The upper surface of the electrostatic attraction plate 15 is the above-mentioned substrate mounting surface. A temperature sensor 17 (second temperature sensor) is provided inside the substrate holding table 12. As shown, the temperature sensor 17 is preferably arranged corresponding to the location of the electrostatic suction plate 15. The temperature of the electrostatic attraction mechanism, preferably, the surface temperature of the electrostatic attraction plate 15 is detected by the temperature sensor 17.

Along the inner surface of the cylindrical side portion 11a of the vacuum vessel 11, a substantially cylindrical deposition shield 18 is provided in the vacuum vessel 11, for example. The height of the protection sheet 18 is approximately the height from the bottom surface 11c to the ceiling 11b.

A target 19 is provided substantially at the center of the ceiling 11b. The target 19 is made of a substance to be sputtered, and provides a material to be sputter-deposited on the substrate 13. The target 19 has a substantially disk shape, and its lower surface faces the internal space of the vacuum vessel 11. The target 19 is located above the substrate 13 mounted and fixed on the substrate holding table 12, and is arranged so as to face the substrate 13. Another room is formed above the ceiling 11b of the vacuum vessel 11, and a magnet 20 is arranged in this room. The form and arrangement of the magnet 20 are arbitrary. In this embodiment, the magnet 20 is provided so as to be rotated by a rotation driving device 21 fixed to the upper surface wall. Magnet 20
This creates a magnetic field line distribution. The magnetic field due to the magnetic field line distribution of the magnet 20 enters the internal space of the vacuum chamber 11 and forms a closed magnetic field region for confining, for example, ions and the like in a region below the target 19. As a result, ions generated by the plasma generated inside the vacuum chamber 11 are confined, and the lower surface of the target 19 is sputtered to generate a film-forming substance. By rotating the magnet 20 by the rotation driving device 21, the magnetic field formed on the lower surface side of the target 19 is rotated, thereby preventing the sputtering region on the lower surface of the target 19 from being biased.

The vacuum vessel 11 provided with the electrostatic attraction mechanism as a sputtering apparatus having the above configuration is equipped with the following peripheral devices for operating the same or detecting the state.

A gas reservoir 31 is attached to the vacuum vessel 11. The gas reservoir 31 supplies a process gas for generating plasma for sputtering the target 19 in the vacuum chamber 11. The gas reservoir 31 and the vacuum vessel 11 are connected by a gas supply pipe 31a. A required voltage is applied to the target 19. For this purpose, a power supply 32 for applying a voltage is provided. A power supply line 32a from the power supply 32 to the target 19 is guided to the target 19 through the upper wall portion of the vacuum vessel 11, but when passing through the wall portion of the vessel, protection is provided from an electrical point of view by, for example, an insulator. It has been done. As described above, the vacuum vessel 11 is provided with a vacuum exhaust mechanism and a pressure sensor for bringing the inside to a required vacuum state, but illustration thereof is omitted. Further, a substrate loading / unloading mechanism for mounting the substrate 13 to be processed on the substrate holding table 12, an entrance for taking in and out the substrate, a gate valve, and the like are provided, but these are not shown. ing.

Further, with respect to the substrate holding table 12 having a built-in electrostatic chucking mechanism, related devices are provided for the portion of the electrostatic chucking mechanism. Electrodes 15a, 15 of electrostatic attraction plate 15
In b, power supplies 33a and 33b are provided, respectively, and a required voltage is applied to each electrode. When a required voltage is applied to each of the electrodes 15a and 15b, an electrostatic attraction is generated, and the substrate 13 mounted on the upper surface of the electrostatic attraction plate 15 is fixed. As will be described later, the present embodiment is characterized in how the electrostatic attraction mechanism operates (control method), that is, how the electrostatic attraction mechanism generates the electrostatic attraction force. When the electrostatic attraction force is generated, the substrate 13 is pressed against the upper surface of the electrostatic attraction plate 15. For the substrate 13, a radiation thermometer 34 (first type) using a cylindrical body at a position penetrating the central axis of the substrate holding table 12.
Temperature sensor). An upper end of the radiation thermometer 34 in FIG.
The temperature of the substrate 13 is detected and monitored in a non-contact state. The non-contact is used in order not to damage the surface of the substrate. The radiation thermometer 34 passes through the center of the substrate holder 12 and further passes through the bottom 11 c of the vacuum vessel 11,
It is pulled out to the lower side of the vacuum container 11. On the lower side of the vacuum vessel 11, the lower end of the radiation thermometer 34 is connected to the signal converter 35. The signal converter 35 converts the temperature of the substrate 13 into an electric signal. Further, a heater power supply 36 is provided for the heater 16. The heater power supply 36 is connected to the heater 16.
To maintain the substrate 13 at a predetermined temperature. The temperature of the substrate holder 12 itself detected by the temperature sensor 17 is converted into an electric signal by the signal converter 37. Signal converter 3
The electric signal (voltage signal) output from each of 5 and 37 is input to comparator 38. In the comparator 38, a difference between the voltage signals output from each of the signal converters 35 and 37 is obtained, and a voltage signal corresponding to the difference is output. That is,
The comparator 38 compares the temperature of the substrate 13 with the temperature of the substrate holding table 12, particularly the temperature of the substrate suction plate 15, and outputs a voltage signal corresponding to the difference therebetween. The voltage signal output from the comparator 38 is supplied to power supplies 33a and 33b. The voltage output from the power supplies 33a and 33b is controlled by the output voltage of the comparator 38. Reference numeral 39 provided at one input terminal of the comparator 38 is a reference voltage setting device.

In the above configuration, the substrate 13 is mounted on the electrostatic attraction plate 15 of the substrate holding table 12 of the vacuum vessel 11 by the function of a substrate loading / unloading mechanism or the like. When a required voltage is applied to the electrodes 15a and 15b from the power supplies 33a and 33b under predetermined conditions described later, an electrostatic attraction force is generated, and the substrate 13 is pressed and fixed onto the electrostatic attraction plate 15. On the other hand, when a process gas is introduced into the vacuum chamber 11 and a discharge is generated by setting necessary discharge conditions, the inner surface of the target 19 is sputtered. Particles sputtered from the target 19 adhere to the surface of the substrate 13.

Electric power is supplied to the heater 16 of the substrate holder 12 from a heater power supply 36, and the heater 16 causes the heater 16 to rotate.
2 is heated so as to be maintained at a predetermined temperature. Substrate 1
3 is also heated.

In the above state, the temperature of the substrate 13 is
It is detected in a non-contact state by the radiation thermometer 34, converted into a voltage signal by the signal converter 35, and a two-input comparator 38
Is input to one of the input terminals. The temperature of the substrate holder 12 (holder 14 or electrostatic attraction plate 15) detected by the temperature sensor 17 is converted into a voltage signal by a signal converter 37 and input to the other input terminal of the comparator 38.

The operation of the electrostatic chucking mechanism built in the substrate holding table 12, that is, the application of the voltage to the electrodes 15a and 15b is controlled by the output voltages of the comparator 38 and the power supplies 33a and 33b.
Is controlled by controlling the operation. Specifically, when the difference between the voltage signals output from the signal converters 35 and 37 reaches a specific allowable range (permissible condition), the comparator 38 applies the drive voltage to the power supplies 33a and 33b for the electrostatic chuck mechanism. Give
The power supplies 33a and 33b apply DC voltages having different polarities to the electrodes 15a and 15b, respectively. As a result, the electrostatic attraction mechanism built in the substrate holding table 12 is operated, and the substrate 13 is fixed by the electrostatic attraction force. As the above “specific allowable range”, preferably, the temperature of the substrate 13 falls within 80% of the temperature (preferably, the surface temperature) of the electrostatic attraction plate 15 or the temperature of the substrate 13 and the temperature of the electrostatic attraction plate Fifteen
(Preferably the surface temperature) is 50 ° C. or less. That is, the electrostatic chucking mechanism of the substrate holding table 12 according to this embodiment is configured to perform the fixing by the electrostatic chuck when the temperature difference between the substrate temperature and the electrostatic chuck plate temperature satisfies the desired condition. .

Next, a method of controlling the operation of the electrostatic attraction mechanism according to the present invention will be described. This operation control method is based on the following. FIG. 2 shows a change in the number of particles when the temperature difference between the substrate temperature and the electrostatic attraction plate temperature is changed in accordance with the transition of the elapsed time in the apparatus configuration shown in FIG. In FIG. 2, the horizontal axis represents elapsed time, with (A) indicating a change in temperature difference and (B) indicating a change in the number of particles. These changes are obtained as an experimental result. In the elapsed time on the horizontal axis in FIG. 2A, the time when the substrate 13 is placed on the electrostatic attraction plate 15 is set to 0. Reference numeral 41 denotes a change characteristic of the temperature of the substrate 13 measured by the discharge thermometer 34. Reference numeral 42 denotes a change characteristic of the temperature of the electrostatic attraction plate 15 (substrate holder 12) measured by the temperature sensor 17. The electrostatic attraction plate 15 is already heated by the heater 16 and is maintained at a constant high temperature. On the other hand, the temperature of the substrate 13 is relatively low, and since the substrate 13 is placed on the electrostatic attraction plate 15, the temperature is gradually increased by receiving heat conducted from the electrostatic attraction plate 15. Therefore, the temperature difference 43 between the substrate 13 and the electrostatic attraction plate 15 gradually decreases.

In FIG. 2B, as compared with FIG. 2A, it is shown that the smaller the temperature difference 43 between the substrate and the electrostatic attraction plate, the smaller the number of generated particles. In other words, the characteristics show that the number of particles generated when the temperature difference between the substrate and the electrostatic attraction plate is large is large, and the number of particles generated is small when the temperature difference between the substrate and the electrostatic attraction plate is small. From this,
Ideally, if the temperature difference between the substrate 13 and the electrostatic attraction plate 15 becomes 0, the electrostatic attraction mechanism is operated to fix the substrate with the electrostatic attraction force, so that the number of generated particles is reduced. It can be extremely reduced. On the other hand, from the standpoint of practicality, it can be said that a difference between the substrate temperature and the electrostatic attraction plate temperature of about 50 ° C. is sufficient.
However, the condition of the number of particles can be changed according to the purpose, and cannot be strictly defined. Therefore, the condition of the temperature difference is also an example, and is not limited to this. What is important is the temperature of the substrate and the temperature of the substrate holder that houses the electrostatic chuck mechanism (essentially the temperature of the electrostatic chuck mechanism).
By operating the electrostatic attraction mechanism to fix the substrate at a stage where the difference between them becomes smaller in a certain range, the number of particles can be reduced. The temperature difference of 50 ° C. is a usable application, and is a preferable condition because the process time can be reduced from the viewpoint of improving productivity. The above-mentioned condition that “the temperature of the substrate is within 80% of the temperature of the electrostatic attraction plate” is also a preferable condition from the same viewpoint.

The reason that the above conditions are required is considered to depend on the cause of the generation of particles. Essentially, for the aforementioned particles, when the temperature of the substrate 13 and the temperature of the electrostatic attraction plate 15 are significantly different, if these are strongly fixed by the electrostatic attraction force, the respective thermal expansion coefficients are significantly different. As a result, it is considered that a displacement occurs due to contact between the two, and particles are generated. Therefore, if the time when the substrate 13 is fixed to the electrostatic attraction plate 15 by the electrostatic attraction force is set to a time when the temperature difference becomes small enough to fall within a predetermined range, the problem of the particles is expected to be eliminated. .

Therefore, the condition of the temperature difference between the substrate temperature and the electrostatic chucking plate temperature is not limited to the above two conditions, but is based on the characteristics shown in FIG. Of course, it can be arbitrarily determined based on

FIG. 3 shows a second embodiment of the present invention. Second
The configuration of the apparatus shown in FIG. 1 is a sputtering apparatus, which is a partially modified version of the first embodiment. Elements that are substantially the same as the components shown in FIG. 1 are given the same reference numerals, and descriptions thereof will be omitted. A characteristic part of this embodiment is that a heating source 51 is provided on the outside at a substantially central portion in the axial direction of the side surface portion 11a of the vacuum vessel 11. Heat source 5
1 includes a ring-shaped container 51a provided so as to surround the peripheral surface portion 11a, and a heat source 51b such as a lamp or a heater disposed inside the container 51a. Further, since the heating source 51 is provided on the side surface 11a of the vacuum vessel 11, the lower portion of the shield 18 is cut and the axial length of the shield 18 is shortened as compared with the first embodiment. I have. The heat radiated from the heat source 51b is directly or indirectly applied to the substrate 13 placed on the substrate holder 12. Other configurations are the same as those of the first embodiment.

According to the second embodiment, when the substrate 13 is carried into the vacuum vessel 11 and placed on the substrate holder 12 (electrostatic attraction plate 15), the substrate 13 is moved to the substrate holder. In addition to being heated by the conduction heat from the heating device 12, the heating is performed by the heating source 51 at least at a stage before the electrostatic attraction mechanism operates. Therefore, the temperature of the substrate introduced into the vacuum vessel 11 can be quickly brought close to the temperature of the electrostatic chuck mechanism, and the processing speed can be improved. As a result, the process time in the sputtering apparatus can be significantly reduced. The heating operation of the heating source 51 can be arbitrarily controlled from the viewpoint of controlling the temperature of the substrate.

In each of the above-described embodiments, the sputtering apparatus has been described as an example of the vacuum processing apparatus having the electrostatic suction mechanism. However, the vacuum processing apparatus according to the present invention includes other vacuum deposition apparatuses, CVD apparatuses, metal and insulating materials. Of course, it can be used for various research and industrial vacuum processing apparatuses such as a film etching apparatus and an ion implantation apparatus. Further, in the above-described embodiment, the description has been made using the bipolar type (two-electrode operation). However, the same effect can be obtained with a monopolar type electrostatic chucking mechanism.

[0036]

As is apparent from the above description, according to the present invention, when the substrate is fixed by the electrostatic attraction mechanism, the temperature of the substrate is set after the substrate is placed on the substrate mounting surface of the electrostatic attraction mechanism. The relationship between the temperature of the substrate suction mechanism and the substrate is fixed by operating the electrostatic suction mechanism when the temperature difference between the two reaches the range that satisfies the above-described predetermined condition. The number of particles generated at the contact portions between them can be significantly reduced, and the product yield can be improved.

[Brief description of the drawings]

FIG. 1 is a diagram schematically illustrating an internal structure of a vacuum processing apparatus and a configuration of peripheral devices according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a cause of generation of particles.

FIG. 3 is a view schematically showing an internal structure of a vacuum processing apparatus and a configuration of peripheral devices according to a second embodiment of the present invention.

FIG. 4 is a diagram illustrating a phenomenon of generation of particles caused by an electrostatic attraction mechanism.

FIG. 5 is a diagram illustrating characteristics of particle generation caused by an electrostatic attraction mechanism.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Vacuum processing apparatus 12 Substrate holding stand 13 Substrate 14 Holder 15 Electrostatic adsorption plate 15a, 15b Electrode 16 Heater 17 Temperature sensor 34 Radiation thermometer 38 Comparator

[Procedure amendment]

[Submission date] June 28, 2000 (2006.2.
8)

[Procedure amendment 1]

[Document name to be amended] Drawing

[Correction target item name] Fig. 4

[Correction method] Change

[Correction contents]

FIG. 4

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 21/205 H01L 21/205 5F031 21/3065 B23Q 3/15 D 5F045 // B23Q 3/15 H01L 21 / 302 B 5F103 F term (reference) 3C016 AA01 CE05 GA10 4K029 AA24 CA01 CA05 DA08 DA10 EA08 JA05 4K030 CA17 FA10 GA02 HA11 HA13 JA10 KA23 KA39 KA41 4K057 DD01 DG02 DG20 DM35 DM39 5F004 AA13 BA04 BB08 CA08 JA51 MA28 MA29 MA31 MA32 PA26 5F045 AA19 BB15 EK07 EK27 EM05 GB05 5F103 AA08 BB24 BB34 BB42 BB52 BB59 RR10

Claims (7)

[Claims] 1. A vacuum processing apparatus having an electrostatic suction mechanism for mounting and fixing a substrate, wherein: a first temperature sensor for detecting a temperature of the substrate; and a second temperature sensor for detecting a temperature of the electrostatic suction mechanism. A temperature sensor, a detection signal output by the first temperature sensor and a detection signal output by the second temperature sensor, and the electrostatic adsorption is performed when a difference between the two detection signals falls within a range satisfying a predetermined condition. And a comparator that outputs a signal for operating the mechanism. 2. The vacuum processing apparatus according to claim 1, further comprising a heating source for heating the substrate at least before the operation of the electrostatic suction mechanism. 3. The electrostatic device according to claim 1, wherein the range satisfying the predetermined condition is a range in which a difference between a temperature of the substrate and a temperature of the electrostatic chucking mechanism is 50 ° C. or less. Vacuum processing device with suction mechanism. 4. The electrostatic attraction mechanism according to claim 1, wherein the range satisfying the predetermined condition is a range where the temperature of the substrate is within 80% of the temperature of the electrostatic attraction mechanism. Vacuum processing device equipped with. 5. An operation control method of an electrostatic attraction mechanism for mounting and fixing a substrate in a vacuum environment, wherein a difference between a temperature of the substrate and a temperature of the electrostatic attraction mechanism is obtained.
When the difference falls within a range satisfying a predetermined condition, an electrostatic chucking operation is performed to fix the substrate, and an operation control method of the electrostatic chucking mechanism is provided. 6. The electrostatic attraction mechanism according to claim 5, wherein the range that satisfies the predetermined condition is a range where the difference between the temperature of the substrate and the temperature of the electrostatic attraction mechanism is 50 ° C. or less. Operation control method. 7. The operation of the electrostatic attraction mechanism according to claim 5, wherein the range satisfying the predetermined condition is a range where the temperature of the substrate is within 80% of the temperature of the electrostatic attraction mechanism. Control method.