JP2001521151A - 固体中のスピン分極した電子の流れを検出する方法 - Google Patents
固体中のスピン分極した電子の流れを検出する方法Info
- Publication number
- JP2001521151A JP2001521151A JP2000517287A JP2000517287A JP2001521151A JP 2001521151 A JP2001521151 A JP 2001521151A JP 2000517287 A JP2000517287 A JP 2000517287A JP 2000517287 A JP2000517287 A JP 2000517287A JP 2001521151 A JP2001521151 A JP 2001521151A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- solid
- ferromagnetic
- spin
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000005291 magnetic effect Effects 0.000 claims abstract description 68
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 46
- 230000005684 electric field Effects 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 238000005259 measurement Methods 0.000 claims abstract description 5
- 230000015654 memory Effects 0.000 claims description 24
- 239000003302 ferromagnetic material Substances 0.000 claims description 20
- 230000005415 magnetization Effects 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000696 magnetic material Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000002772 conduction electron Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 235000021184 main course Nutrition 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0213—Measuring direction or magnitude of magnetic fields or magnetic flux using deviation of charged particles by the magnetic field
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19746138A DE19746138A1 (de) | 1997-10-18 | 1997-10-18 | Verfahren zum Detektieren eines Stroms spingpolarsierter Elektronen in einem Festkörper |
| DE19746138.7 | 1997-10-18 | ||
| PCT/DE1998/003026 WO1999021022A2 (de) | 1997-10-18 | 1998-10-15 | Verfahren zum detektieren eines stroms spinpolarisierter elektronen in einem festkörper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001521151A true JP2001521151A (ja) | 2001-11-06 |
Family
ID=7845967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000517287A Pending JP2001521151A (ja) | 1997-10-18 | 1998-10-15 | 固体中のスピン分極した電子の流れを検出する方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1046045A2 (ko) |
| JP (1) | JP2001521151A (ko) |
| KR (1) | KR20010031201A (ko) |
| CN (1) | CN1279765A (ko) |
| DE (1) | DE19746138A1 (ko) |
| WO (1) | WO1999021022A2 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10019697A1 (de) * | 2000-04-20 | 2001-11-15 | Sebastian T B Goennenwein | Verfahren zur Erzeugung und Charakterisierung von spinpolarisierten Ladungsträgersystemen und darauf beruhende Bauelemente |
| JP4714918B2 (ja) * | 2002-11-29 | 2011-07-06 | 独立行政法人科学技術振興機構 | スピン注入素子及びスピン注入素子を用いた磁気装置 |
| US7164181B2 (en) | 2003-07-30 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Spin injection devices |
| KR101106639B1 (ko) * | 2005-08-08 | 2012-01-18 | 삼성전자주식회사 | 전자제품의 조작패널 |
| CN102376872B (zh) * | 2010-08-20 | 2014-05-28 | 中国科学院微电子研究所 | 基于霍尔效应的mos晶体管 |
| FR3066297B1 (fr) * | 2017-05-11 | 2019-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif quantique a qubits de spin |
| CN108151931B (zh) * | 2017-12-23 | 2019-08-09 | 福州大学 | 一种估算硒化铋中线偏振光产生的自旋横向力的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2663751B1 (fr) * | 1990-06-25 | 1992-09-18 | Commissariat Energie Atomique | Magnetometre directionnel a resonance. |
| US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
| US5654566A (en) * | 1995-04-21 | 1997-08-05 | Johnson; Mark B. | Magnetic spin injected field effect transistor and method of operation |
| US5801984A (en) * | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
-
1997
- 1997-10-18 DE DE19746138A patent/DE19746138A1/de not_active Withdrawn
-
1998
- 1998-10-15 CN CN98811302A patent/CN1279765A/zh active Pending
- 1998-10-15 JP JP2000517287A patent/JP2001521151A/ja active Pending
- 1998-10-15 WO PCT/DE1998/003026 patent/WO1999021022A2/de not_active Application Discontinuation
- 1998-10-15 KR KR1020007004144A patent/KR20010031201A/ko not_active Application Discontinuation
- 1998-10-15 EP EP98959729A patent/EP1046045A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999021022A3 (de) | 1999-07-01 |
| WO1999021022A9 (de) | 1999-08-05 |
| WO1999021022A2 (de) | 1999-04-29 |
| EP1046045A2 (en) | 2000-10-25 |
| CN1279765A (zh) | 2001-01-10 |
| DE19746138A1 (de) | 1999-04-22 |
| KR20010031201A (ko) | 2001-04-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20020807 |