JP2001516460A - 磁界電力センサおよびプログラム可能な磁界検出を有する多重周波数電圧調整回路 - Google Patents
磁界電力センサおよびプログラム可能な磁界検出を有する多重周波数電圧調整回路Info
- Publication number
- JP2001516460A JP2001516460A JP53751999A JP53751999A JP2001516460A JP 2001516460 A JP2001516460 A JP 2001516460A JP 53751999 A JP53751999 A JP 53751999A JP 53751999 A JP53751999 A JP 53751999A JP 2001516460 A JP2001516460 A JP 2001516460A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- magnetic field
- coupled
- input
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims abstract description 15
- 239000003623 enhancer Substances 0.000 claims abstract description 10
- 238000004146 energy storage Methods 0.000 claims abstract description 4
- 230000015556 catabolic process Effects 0.000 claims description 5
- 238000007599 discharging Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 description 68
- 238000010586 diagram Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 241001161843 Chandra Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
- H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Measurement Of Current Or Voltage (AREA)
- Dc-Dc Converters (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/007,485 | 1998-01-15 | ||
| US09/007,485 US6052299A (en) | 1998-01-15 | 1998-01-15 | Robust LC full-wave bridge rectifier input structure |
| US09/061,529 | 1998-04-16 | ||
| US09/061,529 US5998980A (en) | 1998-04-16 | 1998-04-16 | Highly efficient multi-frequency voltage regulating circuit incorporating a magnetic field power sensor and programmable magnetic field detection |
| PCT/US1999/000936 WO1999037039A2 (en) | 1998-01-15 | 1999-01-15 | A multi-frequency voltage regulating circuit incorporating a magnetic field sensor and programmable magnetic field detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001516460A true JP2001516460A (ja) | 2001-09-25 |
Family
ID=26677058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53751999A Pending JP2001516460A (ja) | 1998-01-15 | 1999-01-15 | 磁界電力センサおよびプログラム可能な磁界検出を有する多重周波数電圧調整回路 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0985278A2 (ko) |
| JP (1) | JP2001516460A (ko) |
| KR (1) | KR20000076299A (ko) |
| WO (1) | WO1999037039A2 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015214251A1 (de) | 2014-08-25 | 2016-02-25 | Fujitsu Semiconductor Limited | Halbleitervorrichtung |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1096640A3 (en) * | 1999-10-25 | 2002-11-27 | Seiko Epson Corporation | AC voltage detection circuit and method, charging circuit and method, chopper circuit and chopping method, chopper charging circuit and method, electronic apparatus, and timepiece |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3417455C2 (de) * | 1984-05-11 | 1986-07-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Einrichtung zur induktiven Energie- und Datenübertragung |
| NL8700861A (nl) * | 1987-04-13 | 1988-11-01 | Nedap Nv | Lees-, schrijfsysteem met miniatuur informatiedrager. |
| GB9011970D0 (en) * | 1990-05-29 | 1990-07-18 | Leigh Stewart Prod | Electrical control system for,for example,an air spa bath |
-
1999
- 1999-01-15 KR KR1019997008400A patent/KR20000076299A/ko not_active Application Discontinuation
- 1999-01-15 JP JP53751999A patent/JP2001516460A/ja active Pending
- 1999-01-15 WO PCT/US1999/000936 patent/WO1999037039A2/en not_active Application Discontinuation
- 1999-01-15 EP EP99902303A patent/EP0985278A2/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015214251A1 (de) | 2014-08-25 | 2016-02-25 | Fujitsu Semiconductor Limited | Halbleitervorrichtung |
| US9881246B2 (en) | 2014-08-25 | 2018-01-30 | Fujitsu Semiconductor Limited | Semiconductor device including a rectification circuit |
| DE102015214251B4 (de) | 2014-08-25 | 2019-03-07 | Fujitsu Semiconductor Limited | Halbleitervorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000076299A (ko) | 2000-12-26 |
| EP0985278A2 (en) | 2000-03-15 |
| WO1999037039A3 (en) | 1999-11-18 |
| WO1999037039A2 (en) | 1999-07-22 |
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