JP2001511317A - 薄膜トランジスタ及びこの薄膜トランジスタを具える電子デバイス - Google Patents

薄膜トランジスタ及びこの薄膜トランジスタを具える電子デバイス

Info

Publication number
JP2001511317A
JP2001511317A JP53041799A JP53041799A JP2001511317A JP 2001511317 A JP2001511317 A JP 2001511317A JP 53041799 A JP53041799 A JP 53041799A JP 53041799 A JP53041799 A JP 53041799A JP 2001511317 A JP2001511317 A JP 2001511317A
Authority
JP
Japan
Prior art keywords
electronic device
layer
silicon
electrode
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP53041799A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001511317A5 (enExample
Inventor
スティーヴン チャールズ ディーン
ジョン マーティン シャノン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of JP2001511317A publication Critical patent/JP2001511317A/ja
Publication of JP2001511317A5 publication Critical patent/JP2001511317A5/ja
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP53041799A 1997-12-10 1998-11-13 薄膜トランジスタ及びこの薄膜トランジスタを具える電子デバイス Abandoned JP2001511317A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9726094.7 1997-12-10
GBGB9726094.7A GB9726094D0 (en) 1997-12-10 1997-12-10 Thin film transistors and electronic devices comprising such
PCT/IB1998/001815 WO1999030369A2 (en) 1997-12-10 1998-11-13 Thin film transistors and electronic devices comprising such

Publications (2)

Publication Number Publication Date
JP2001511317A true JP2001511317A (ja) 2001-08-07
JP2001511317A5 JP2001511317A5 (enExample) 2006-04-06

Family

ID=10823387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53041799A Abandoned JP2001511317A (ja) 1997-12-10 1998-11-13 薄膜トランジスタ及びこの薄膜トランジスタを具える電子デバイス

Country Status (6)

Country Link
US (1) US6064091A (enExample)
EP (1) EP0974164A2 (enExample)
JP (1) JP2001511317A (enExample)
KR (1) KR100621488B1 (enExample)
GB (1) GB9726094D0 (enExample)
WO (1) WO1999030369A2 (enExample)

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US7167155B1 (en) 1995-07-20 2007-01-23 E Ink Corporation Color electrophoretic displays
US6704133B2 (en) 1998-03-18 2004-03-09 E-Ink Corporation Electro-optic display overlays and systems for addressing such displays
US7075502B1 (en) 1998-04-10 2006-07-11 E Ink Corporation Full color reflective display with multichromatic sub-pixels
US7030412B1 (en) * 1999-05-05 2006-04-18 E Ink Corporation Minimally-patterned semiconductor devices for display applications
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
GB2358081B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp A thin-film transistor and a method for maufacturing thereof
GB2358084B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Semiconductor transistor
US6509581B1 (en) * 2000-03-29 2003-01-21 Delta Optoelectronics, Inc. Structure and fabrication process for an improved polymer light emitting diode
US7893435B2 (en) 2000-04-18 2011-02-22 E Ink Corporation Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough
AU2001253575A1 (en) 2000-04-18 2001-10-30 E-Ink Corporation Process for fabricating thin film transistors
CN1423841A (zh) 2000-12-21 2003-06-11 皇家菲利浦电子有限公司 薄膜晶体管
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
JP5243686B2 (ja) * 2005-04-28 2013-07-24 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
US7411298B2 (en) * 2005-08-17 2008-08-12 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
US7691691B1 (en) * 2006-05-23 2010-04-06 Kovio, Inc. Semiconductor device and methods for making the same
US8110453B2 (en) * 2008-04-17 2012-02-07 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
TWI379142B (en) * 2008-07-17 2012-12-11 Au Optronics Corp Thin film transistor substrate and thin film transistor of display panel and method of making the same
CN101330106B (zh) * 2008-07-28 2010-06-02 友达光电股份有限公司 显示面板的薄膜晶体管基板与薄膜晶体管及其制作方法
KR101824124B1 (ko) * 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI458098B (zh) * 2009-12-31 2014-10-21 Au Optronics Corp 薄膜電晶體
CN102790056B (zh) * 2012-08-13 2014-12-10 京东方科技集团股份有限公司 阵列基板及其制作方法、goa单元制作方法及显示装置
CN108321152B (zh) * 2018-04-04 2024-10-18 京东方科技集团股份有限公司 指纹识别传感器及其制备方法以及指纹识别设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341569A (en) * 1979-07-24 1982-07-27 Hughes Aircraft Company Semiconductor on insulator laser process
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
US4617066A (en) * 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
EP0217406B1 (en) * 1985-10-04 1992-06-10 Hosiden Corporation Thin-film transistor and method of fabricating the same
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
US4762398A (en) * 1987-01-26 1988-08-09 Hosiden Electronics Co., Ltd. Pixel transistor free of parasitic capacitance fluctuations from misalignment
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
US4988638A (en) * 1988-11-07 1991-01-29 Xerox Corporation Method of fabrication a thin film SOI CMOS device
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
US5155571A (en) * 1990-08-06 1992-10-13 The Regents Of The University Of California Complementary field effect transistors having strained superlattice structure
US5355002A (en) * 1993-01-19 1994-10-11 Industrial Technology Research Institute Structure of high yield thin film transistors
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5587591A (en) * 1993-12-29 1996-12-24 General Electric Company Solid state fluoroscopic radiation imager with thin film transistor addressable array
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length

Also Published As

Publication number Publication date
WO1999030369A2 (en) 1999-06-17
GB9726094D0 (en) 1998-02-11
WO1999030369A3 (en) 1999-08-26
KR100621488B1 (ko) 2006-09-13
EP0974164A2 (en) 2000-01-26
KR20000070910A (ko) 2000-11-25
US6064091A (en) 2000-05-16

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