JP2001506319A - 炭素膜を形成する方法 - Google Patents
炭素膜を形成する方法Info
- Publication number
- JP2001506319A JP2001506319A JP54048298A JP54048298A JP2001506319A JP 2001506319 A JP2001506319 A JP 2001506319A JP 54048298 A JP54048298 A JP 54048298A JP 54048298 A JP54048298 A JP 54048298A JP 2001506319 A JP2001506319 A JP 2001506319A
- Authority
- JP
- Japan
- Prior art keywords
- arc
- pulsing
- forming
- signal
- pulsed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
- H01J37/32064—Circuits specially adapted for controlling the arc discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US82137497A | 1997-03-20 | 1997-03-20 | |
US08/821,374 | 1997-03-20 | ||
PCT/US1998/001441 WO1998041666A1 (fr) | 1997-03-20 | 1998-01-26 | Procede de formation d'un film de carbone |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001506319A true JP2001506319A (ja) | 2001-05-15 |
Family
ID=25233216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54048298A Pending JP2001506319A (ja) | 1997-03-20 | 1998-01-26 | 炭素膜を形成する方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0918886A1 (fr) |
JP (1) | JP2001506319A (fr) |
KR (1) | KR20000015801A (fr) |
CN (1) | CN1220707A (fr) |
WO (1) | WO1998041666A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011207736A (ja) * | 2010-03-12 | 2011-10-20 | Sekisui Chem Co Ltd | グラフェンの形成方法 |
US8294230B2 (en) | 2007-04-05 | 2012-10-23 | Fujitsu Semiconductor Limited | Surface profile sensor and method for manufacturing the same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7175752B2 (en) * | 2002-05-24 | 2007-02-13 | Federal-Mogul Worldwide, Inc. | Method and apparatus for electrochemical machining |
WO2005083144A1 (fr) * | 2004-02-27 | 2005-09-09 | Japan Science And Technology Agency | Film carboné fin, procédé de production de ce film et élément utilisant le film fin |
DE102007021386A1 (de) * | 2007-05-04 | 2008-11-06 | Christof-Herbert Diener | Kurztaktniederdruckplasmaanlage |
ES2717934T3 (es) * | 2014-05-13 | 2019-06-26 | Argor Aljba Sa | Método para filtrar macropartículas en una deposición física de vapor por arco catódico (PVD), en vacío |
CN105603372B (zh) * | 2015-12-22 | 2018-03-27 | 长春吉大科诺科技有限责任公司 | 电磁驱动式石墨电弧溅射镶嵌探头 |
US20210156033A1 (en) * | 2017-09-25 | 2021-05-27 | Sumitomo Electric Industries, Ltd. | Method for manufacturing hard carbon-based coating, and member provided with coating |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL71530A (en) * | 1984-04-12 | 1987-09-16 | Univ Ramot | Method and apparatus for surface-treating workpieces |
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
JPS63210099A (ja) * | 1987-02-26 | 1988-08-31 | Nissin Electric Co Ltd | ダイヤモンド膜の作製方法 |
DE9109503U1 (de) * | 1991-07-31 | 1991-10-17 | Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier | Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik |
-
1998
- 1998-01-26 CN CN199898800304A patent/CN1220707A/zh active Pending
- 1998-01-26 KR KR1019980709350A patent/KR20000015801A/ko not_active Application Discontinuation
- 1998-01-26 WO PCT/US1998/001441 patent/WO1998041666A1/fr not_active Application Discontinuation
- 1998-01-26 JP JP54048298A patent/JP2001506319A/ja active Pending
- 1998-01-26 EP EP98904681A patent/EP0918886A1/fr not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8294230B2 (en) | 2007-04-05 | 2012-10-23 | Fujitsu Semiconductor Limited | Surface profile sensor and method for manufacturing the same |
JP2011207736A (ja) * | 2010-03-12 | 2011-10-20 | Sekisui Chem Co Ltd | グラフェンの形成方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1220707A (zh) | 1999-06-23 |
KR20000015801A (ko) | 2000-03-15 |
WO1998041666A1 (fr) | 1998-09-24 |
EP0918886A1 (fr) | 1999-06-02 |
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