JP2001503197A5 - - Google Patents

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Publication number
JP2001503197A5
JP2001503197A5 JP1998509542A JP50954298A JP2001503197A5 JP 2001503197 A5 JP2001503197 A5 JP 2001503197A5 JP 1998509542 A JP1998509542 A JP 1998509542A JP 50954298 A JP50954298 A JP 50954298A JP 2001503197 A5 JP2001503197 A5 JP 2001503197A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP1998509542A
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English (en)
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JP2001503197A (ja
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Application filed filed Critical
Priority claimed from PCT/IB1997/000985 external-priority patent/WO1998007167A2/en
Publication of JP2001503197A publication Critical patent/JP2001503197A/ja
Publication of JP2001503197A5 publication Critical patent/JP2001503197A5/ja
Ceased legal-status Critical Current

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Description

Figure 2001503197
Figure 2001503197
Figure 2001503197
Figure 2001503197
Figure 2001503197
Figure 2001503197
Figure 2001503197
Figure 2001503197
Figure 2001503197
JP10509542A 1996-08-12 1997-08-11 半導体スーパーキャパシタシステム、その製法、及び該製法による製品 Ceased JP2001503197A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US2383796P 1996-08-12 1996-08-12
US60/023,837 1996-08-12
PCT/IB1997/000985 WO1998007167A2 (en) 1996-08-12 1997-08-11 Semiconductor supercapacitor system, method for making same and articles produced therefrom
US08/911,716 US6180252B1 (en) 1996-08-12 1997-08-15 Semiconductor supercapacitor system, method for making same and articles produced therefrom

Publications (2)

Publication Number Publication Date
JP2001503197A JP2001503197A (ja) 2001-03-06
JP2001503197A5 true JP2001503197A5 (ja) 2005-05-12

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Application Number Title Priority Date Filing Date
JP10509542A Ceased JP2001503197A (ja) 1996-08-12 1997-08-11 半導体スーパーキャパシタシステム、その製法、及び該製法による製品

Country Status (6)

Country Link
US (1) US6180252B1 (ja)
EP (1) EP0917719A2 (ja)
JP (1) JP2001503197A (ja)
AU (1) AU3632697A (ja)
WO (1) WO1998007167A2 (ja)
ZA (1) ZA977187B (ja)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137671A (en) * 1998-01-29 2000-10-24 Energenius, Inc. Embedded energy storage device
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6623865B1 (en) 2000-03-04 2003-09-23 Energenius, Inc. Lead zirconate titanate dielectric thin film composites on metallic foils
EP1290733A1 (en) * 2000-05-31 2003-03-12 Motorola, Inc. Semiconductor device and method for manufacturing the same
US6649930B2 (en) * 2000-06-27 2003-11-18 Energenius, Inc. Thin film composite containing a nickel-coated copper substrate and energy storage device containing the same
WO2002003471A1 (en) * 2000-06-30 2002-01-10 Motorola, Inc. Hybrid semiconductor structure and device
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
WO2002009187A2 (en) * 2000-07-24 2002-01-31 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6563118B2 (en) 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6515402B2 (en) * 2001-01-24 2003-02-04 Koninklijke Philips Electronics N.V. Array of ultrasound transducers
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
EP1399602A1 (en) * 2001-06-28 2004-03-24 Energenius, Inc. Method of making a nickel-coated copper substrate and thin film composite containing the same
US7282731B2 (en) * 2001-06-29 2007-10-16 Alexandr Mikhailovich Ilyanok Quantum supermemory
EA003852B1 (ru) * 2001-06-29 2003-10-30 Александр Михайлович Ильянок Квантовый суперконденсатор
EA003573B1 (ru) * 2001-06-29 2003-06-26 Александр Михайлович Ильянок Плоский дисплей с самосканирующей разверткой
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US20030059366A1 (en) * 2001-09-21 2003-03-27 Cabot Corporation Dispersible barium titanate-based particles and methods of forming the same
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
TW200302296A (en) * 2001-11-12 2003-08-01 Toho Titanium Co Ltd Composite titanium oxide film and method for formation thereof and titanium electrolytic capacitor
US6819540B2 (en) * 2001-11-26 2004-11-16 Shipley Company, L.L.C. Dielectric structure
US6661642B2 (en) 2001-11-26 2003-12-09 Shipley Company, L.L.C. Dielectric structure
US20030215606A1 (en) * 2002-05-17 2003-11-20 Clancy Donald J. Dispersible dielectric particles and methods of forming the same
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
US20040175585A1 (en) * 2003-03-05 2004-09-09 Qin Zou Barium strontium titanate containing multilayer structures on metal foils
WO2005094440A2 (en) 2004-03-18 2005-10-13 Nanosys Inc. Nanofiber surface based capacitors
US7190016B2 (en) * 2004-10-08 2007-03-13 Rohm And Haas Electronic Materials Llc Capacitor structure
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US7375412B1 (en) * 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
JP4918247B2 (ja) 2005-10-31 2012-04-18 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池モジュール及びその製造方法
US9870960B2 (en) 2014-12-18 2018-01-16 International Business Machines Corporation Capacitance monitoring using X-ray diffraction
FR3045036B1 (fr) * 2015-12-15 2017-12-22 Commissariat Energie Atomique Procede de preparation d'une solution sol-gel utilisable pour la preparation d'une ceramique de titanate de baryum dope par du hafnium et/ou par au moins un element lanthanide
US10156770B1 (en) * 2018-02-08 2018-12-18 The Charles Stark Draper Laboratory, Inc. Packaging and interconnect systems for edge-emitting light modulators based on surface acoustic wave (SAW) modulation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3472420D1 (en) * 1983-11-29 1988-08-04 Sony Corp Methods of manufacturing dielectric metal titanates
US5198269A (en) 1989-04-24 1993-03-30 Battelle Memorial Institute Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates
DE4017518A1 (de) * 1990-05-31 1991-12-05 Philips Patentverwaltung Verfahren zur herstellung von monolayer-kondensatoren

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