JP2001500188A - チタニウム含有複合物を研磨するための合成物およびその方法 - Google Patents
チタニウム含有複合物を研磨するための合成物およびその方法Info
- Publication number
- JP2001500188A JP2001500188A JP11508826A JP50882699A JP2001500188A JP 2001500188 A JP2001500188 A JP 2001500188A JP 11508826 A JP11508826 A JP 11508826A JP 50882699 A JP50882699 A JP 50882699A JP 2001500188 A JP2001500188 A JP 2001500188A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- substrate
- polishing
- item
- oxidizing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/889,338 US5770103A (en) | 1997-07-08 | 1997-07-08 | Composition and method for polishing a composite comprising titanium |
| US08/889,338 | 1997-07-08 | ||
| PCT/US1998/013991 WO1999002623A1 (en) | 1997-07-08 | 1998-07-07 | Composition and method for polishing a composite comprising titanium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001500188A true JP2001500188A (ja) | 2001-01-09 |
| JP2001500188A5 JP2001500188A5 (https=) | 2006-01-05 |
Family
ID=25394929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11508826A Withdrawn JP2001500188A (ja) | 1997-07-08 | 1998-07-07 | チタニウム含有複合物を研磨するための合成物およびその方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5770103A (https=) |
| EP (1) | EP0931118A4 (https=) |
| JP (1) | JP2001500188A (https=) |
| KR (1) | KR20000068476A (https=) |
| WO (1) | WO1999002623A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003297782A (ja) * | 2002-02-22 | 2003-10-17 | Agere Systems Inc | デュアル配向多結晶材料の化学機械研磨 |
| JP2021153129A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法、および研磨方法 |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| US6132637A (en) | 1996-09-27 | 2000-10-17 | Rodel Holdings, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| US6001269A (en) * | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
| US6001730A (en) * | 1997-10-20 | 1999-12-14 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
| US6284151B1 (en) * | 1997-12-23 | 2001-09-04 | International Business Machines Corporation | Chemical mechanical polishing slurry for tungsten |
| US6294105B1 (en) | 1997-12-23 | 2001-09-25 | International Business Machines Corporation | Chemical mechanical polishing slurry and method for polishing metal/oxide layers |
| KR100581649B1 (ko) * | 1998-06-10 | 2006-05-23 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 | 금속 cmp에서 광택화를 위한 조성물 및 방법 |
| TW512170B (en) * | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
| EP1137056B1 (en) * | 1998-08-31 | 2013-07-31 | Hitachi Chemical Company, Ltd. | Abrasive liquid for metal and method for polishing |
| US6572449B2 (en) | 1998-10-06 | 2003-06-03 | Rodel Holdings, Inc. | Dewatered CMP polishing compositions and methods for using same |
| US6241586B1 (en) * | 1998-10-06 | 2001-06-05 | Rodel Holdings Inc. | CMP polishing slurry dewatering and reconstitution |
| US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
| WO2001019935A1 (en) * | 1999-09-15 | 2001-03-22 | Rodel Holdings, Inc. | Slurry for forming insoluble silicate during chemical-mechanical polishing |
| US6447375B2 (en) | 2000-04-19 | 2002-09-10 | Rodel Holdings Inc. | Polishing method using a reconstituted dry particulate polishing composition |
| TW471057B (en) * | 2000-06-09 | 2002-01-01 | Macronix Int Co Ltd | Method for reducing dishing effect during chemical mechanical polishing |
| US6646348B1 (en) | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
| US6458013B1 (en) | 2000-07-31 | 2002-10-01 | Asml Us, Inc. | Method of chemical mechanical polishing |
| US7029381B2 (en) * | 2000-07-31 | 2006-04-18 | Aviza Technology, Inc. | Apparatus and method for chemical mechanical polishing of substrates |
| MY128145A (en) * | 2000-07-31 | 2007-01-31 | Silicon Valley Group Thermal | In-situ method and apparatus for end point detection in chemical mechanical polishing |
| US6468137B1 (en) | 2000-09-07 | 2002-10-22 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system |
| KR100458756B1 (ko) * | 2001-06-27 | 2004-12-03 | 제일모직주식회사 | 반도체 소자의 금속배선 연마용 cmp 슬러리 |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| KR100421928B1 (ko) * | 2001-11-21 | 2004-03-11 | 제일모직주식회사 | 반도체 웨이퍼의 금속배선 연마용 슬러리 조성물 |
| US6682575B2 (en) | 2002-03-05 | 2004-01-27 | Cabot Microelectronics Corporation | Methanol-containing silica-based CMP compositions |
| US6616514B1 (en) * | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
| US20060042502A1 (en) * | 2002-10-31 | 2006-03-02 | Showa Denko K.K. | Composition for polishing metal, polishing metod for metal layer, and production method for wafer |
| JP2004153086A (ja) * | 2002-10-31 | 2004-05-27 | Showa Denko Kk | 金属研磨組成物、金属膜の研磨方法および基板の製造方法 |
| WO2004073926A1 (en) * | 2003-02-18 | 2004-09-02 | Parker-Hannifin Corporation | Polishing article for electro-chemical mechanical polishing |
| US7148147B2 (en) * | 2003-03-06 | 2006-12-12 | J.G. Systems, Inc. | CMP composition containing organic nitro compounds |
| KR100960687B1 (ko) * | 2003-06-24 | 2010-06-01 | 엘지디스플레이 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US6964600B2 (en) * | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| KR100497413B1 (ko) * | 2004-11-26 | 2005-06-23 | 에이스하이텍 주식회사 | 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법 |
| EP2197972B1 (en) * | 2007-09-21 | 2020-04-01 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| JP5646996B2 (ja) * | 2007-09-21 | 2014-12-24 | キャボット マイクロエレクトロニクス コーポレイション | 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法 |
| KR20140034231A (ko) * | 2011-05-24 | 2014-03-19 | 가부시키가이샤 구라레 | 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3815111C1 (en) * | 1988-05-04 | 1989-02-23 | Carl Kurt Walther Gmbh & Co Kg, 5600 Wuppertal, De | Treatment agent for vibratory grinding, and vibratory grinding process using this treatment agent |
| US4954142A (en) * | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| WO1995024054A1 (en) * | 1994-03-01 | 1995-09-08 | Rodel, Inc. | Improved compositions and methods for polishing |
| WO1996016436A1 (en) * | 1994-11-18 | 1996-05-30 | Advanced Micro Devices, Inc. | Method of making a chemical-mechanical polishing slurry and the polishing slurry |
-
1997
- 1997-07-08 US US08/889,338 patent/US5770103A/en not_active Expired - Fee Related
-
1998
- 1998-07-07 JP JP11508826A patent/JP2001500188A/ja not_active Withdrawn
- 1998-07-07 EP EP98933192A patent/EP0931118A4/en not_active Withdrawn
- 1998-07-07 KR KR1019997001866A patent/KR20000068476A/ko not_active Withdrawn
- 1998-07-07 WO PCT/US1998/013991 patent/WO1999002623A1/en not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003297782A (ja) * | 2002-02-22 | 2003-10-17 | Agere Systems Inc | デュアル配向多結晶材料の化学機械研磨 |
| JP2021153129A (ja) * | 2020-03-24 | 2021-09-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法、および研磨方法 |
| JP7575878B2 (ja) | 2020-03-24 | 2024-10-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物、その製造方法、および研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999002623A1 (en) | 1999-01-21 |
| US5770103A (en) | 1998-06-23 |
| EP0931118A1 (en) | 1999-07-28 |
| KR20000068476A (ko) | 2000-11-25 |
| EP0931118A4 (en) | 2001-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A72 | Notification of change in name of applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A721 Effective date: 20041026 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20050627 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050627 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20060928 |