JP2001345253A - Jig and method for simple mask alignment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and jig for simple mask alignment by which a resist pattern can be formed at a low cost. SOLUTION: When an epitaxial wafer 2 coated with a resist 1 and a photomask 6 are placed on the substrate fixing base 22 of the simple mask alignment jig 20 and, at the same time, two sides of the substrate 2 and mask 6 are aligned with the orthogonal two internal wall surfaces 21a and 21b of a projection 21, the photomask 6 can be aligned with the wafer 2 at a low cost in a short time without using any photomask position adjusting device and, in addition, a resist pattern 10 can be formed by exposing the photoresist 1 to light.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a simple mask alignment method and a jig.

[0002]

2. Description of the Related Art Processing techniques using photosensitive resins are widely used in industry, mainly in the semiconductor industry. When using a photosensitive resin, it is necessary to align the position of the mask with the substrate (mask alignment).

FIGS. 3A to 3E are process diagrams showing a conventional example of a mask alignment method. The thickness of the photomask pattern is exaggerated for convenience of explanation.

[0004] An epitaxial wafer 2 as a substrate on which a photoresist 1 has been applied by a spinner spin coater or the like (not shown) is placed on a substrate fixing table 3 (FIG. 3A).
Using the photomask position adjuster 4, the photomask 6 on which the pattern 5 is formed is moved in the direction of arrow 7 so as to be at a desired position on the epitaxial wafer 2 (FIG. 3).
(B)) Irradiation of ultraviolet rays 8 onto the epitaxial wafer 2 from the photomask 6 side to expose the photoresist 1 to form a latent image of the pattern 5 (FIG. 3C), and the developing solution 9
(FIGS. 3D and 3E).

[0005]

However, in the above-mentioned conventional technology, the x-axis, y-axis,
An expensive fine position adjuster for performing fine adjustment in the four directions of the z-axis and the θ-axis is required, so that the cost is high. Further, when the photomask 6 is moved to a desired position by using the photomask position adjuster 4, fine adjustment is required, and there is a problem that it takes time.

An object of the present invention is to provide a simple mask alignment method and a jig capable of solving the above problems and forming a resist pattern at low cost.

[0007]

In order to achieve the above object, a simple mask alignment jig according to the present invention comprises a substantially L-shaped projection for aligning the positions of two sides of a substrate and a photomask. Is provided on the surface of the.

[0008] The simple mask alignment method of the present invention comprises:
The substrate and the photomask are placed on an alignment jig provided with a substantially L-shaped projection on the surface of the substrate fixing base for aligning the positions of the two sides of the substrate and the photomask. Is adjusted to the inner wall surface of the projection to adjust the exposure position.

According to the present invention, the substrate coated with the resist and the photomask are placed on the substrate fixing table of the simple mask alignment jig, and two sides of the substrate and the photomask are aligned with the inner wall surface of the projection. This makes it possible to match the position of the photomask with the position of the substrate at a low cost and in a short time without using a photomask position adjuster, thereby forming a resist pattern by exposing the photoresist. it can.

[0010]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIGS. 1A to 1E are process diagrams showing an embodiment of a simple mask alignment method according to the present invention.
FIG. 2 is an external perspective view of the simple mask alignment jig of the present invention. In the present embodiment, the production of an evaluation device (pow pattern) for a compound semiconductor epitaxial wafer will be described. Note that common members are used for members similar to those in the conventional example.

A simple mask alignment jig 2 shown in FIG.
0 is 2 for the epitaxial wafer 2 and the photomask 6
A substantially L-shaped projection 21 for adjusting the position of the side is provided on the surface of the substrate fixing base 22.

A compound semiconductor epitaxial wafer 2 coated with a positive photoresist 1 and flat on both sides.
The sides are arranged along two orthogonal inner wall surfaces 21 a and 21 b of the substantially L-shaped projection 21 of the simple mask alignment jig 20 (FIG. 1A), and the pattern 5 is formed on the epitaxial wafer 2. The photomask 6 is placed in the same manner (FIG. 1B), and ultraviolet rays 8 are applied at 10 mW / cm ² for about 5 seconds from the photomask 6 side onto the epitaxial wafer 2 using an ultraviolet lamp (not shown). Irradiation exposes the photoresist 1 (FIG. 1C), and is developed with an alkaline developer 9 to form a resist pattern 10 (FIGS. 1D and 1E).

As the substrate material and the light-shielding material of the photomask 6, a material in which a Cr thin film is vapor-deposited on a glass plate in the shape of a pow pattern is used. Other materials may be used. Although the material of the simple mask alignment jig 20 is brass, any other material may be used as long as it is hardly worn and can withstand the solvent contained in the photoresist 1. In this way, even though the mask alignment of the evaluation device epitaxial wafer 1 is performed very easily and in a short time, exposure can be performed in the same manner as the conventional mask alignment method, and a resist pattern can be formed at low cost. We were able to.

By this method, the resist pattern 10 could be formed with the deviation between the epitaxial wafer 1 and the photomask 6 kept within 0.1 mm.

Note that the two sides of the substrate fixing base 22 for performing the alignment may be inclined about 2 degrees below the horizontal so that the aligned state does not move. When the epitaxial wafer 1 is arranged horizontally, a pressing mechanism may be provided on the side opposite to the matching side (projection and contact side) in order to prevent displacement.

[0017]

In summary, according to the present invention, the following excellent effects are exhibited.

[0018] It is possible to provide a simple mask alignment method capable of forming a resist pattern at low cost.

[Brief description of the drawings]

FIGS. 1A to 1E are process diagrams showing an embodiment of a simple mask alignment method according to the present invention.

FIG. 2 is an external perspective view of a simple mask alignment jig of the present invention.

3A to 3E are process diagrams showing a conventional example of a mask alignment method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Photoresist 2 Substrate (epitaxial wafer) 6 Photomask 20 Simple mask alignment jig 21 Projection 22 Substrate fixing stand

Claims (2)

[Claims] 1. A simple mask alignment jig, wherein a substantially L-shaped projection for aligning two sides of a substrate and a photomask is provided on a surface of a substrate fixing base. 2. The substrate and the photomask are mounted on a simple mask alignment jig provided with a substantially L-shaped planar projection on the surface of the substrate fixing base for aligning two sides of the substrate and the photomask. A simple mask alignment method, wherein the exposure position is adjusted by setting the two sides of the substrate and the photomask to the inner wall surface of the projection.