JP2001344831A - Information recording medium master disk and method for manufacturing the same - Google Patents

Information recording medium master disk and method for manufacturing the same

Info

Publication number
JP2001344831A
JP2001344831A JP2000157752A JP2000157752A JP2001344831A JP 2001344831 A JP2001344831 A JP 2001344831A JP 2000157752 A JP2000157752 A JP 2000157752A JP 2000157752 A JP2000157752 A JP 2000157752A JP 2001344831 A JP2001344831 A JP 2001344831A
Authority
JP
Japan
Prior art keywords
recording medium
information recording
medium master
photoresist
basic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000157752A
Other languages
Japanese (ja)
Inventor
Shinya Abe
伸也 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000157752A priority Critical patent/JP2001344831A/en
Publication of JP2001344831A publication Critical patent/JP2001344831A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a stable method for manufacturing a master disk by which deactivation of a photoresist by intrusion of a base material is suppressed even when a substrate containing a base material is used in the method for the manufacture of an information recording medium which uses a chemically amplifying photoresist. SOLUTION: A non-basic and almost transparent barrier layer 102 which prevents intrusion of a base material is formed between the substrate containing a base and the chemically amplifying photoresist film used as a photosensitive material so as to isolate the photoresist film 103 from diffusion of the base material in the substrate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光ディスク等の情報
記録媒体用原盤の作製方法に関するものであり、特に化
学増幅型フォトレジストを感光性材料として用いる作製
方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a master for an information recording medium such as an optical disk, and more particularly to a method for producing a chemically amplified photoresist as a photosensitive material.

【0002】[0002]

【従来の技術】コンパクトディスク(CD)の普及にと
もない光ディスクは一般的なものとなってきたが、より
高密度な光ディスクの研究開発が盛んに行われ、近年で
はCDよりもさらに高密度なDVDが提案され、実用化
されている。今後高品位テレビといった大容量が必要と
される信号を高密度に記録するための更なる高密度光デ
ィスクの開発が望まれている。そのためには、より微細
な記録のできる高密度な情報記録媒体原盤の作製技術が
非常に重要である。
2. Description of the Related Art With the spread of compact discs (CDs), optical discs have become common. However, research and development of higher density optical discs have been actively carried out. Has been proposed and put into practical use. In the future, development of a further high-density optical disk for recording a signal requiring a large capacity such as a high-definition television at a high density is desired. For that purpose, a technique for producing a high-density information recording medium master capable of finer recording is very important.

【0003】従来の情報記録媒体原盤は、図2に示すよ
うに、ソーダガラス基材201にノボラック樹脂を主成
分としたフォトレジストをスピンコート法により塗布し
てフォトレジスト膜202を形成する塗布工程、青色光
(例えば波長458nm)あるいは近紫外線光(例えば
波長351nm)を、記録すべき信号に応じて変調また
は偏向し、対物レンズ203で集光して露光する記録工
程、その後現像して露光部204を取り除くことにより
ピットと呼ばれるパターンや溝を形成する現像工程によ
り作製される。
As shown in FIG. 2, a conventional information recording medium master is formed by applying a photoresist mainly composed of a novolak resin to a soda glass substrate 201 by a spin coating method to form a photoresist film 202. A recording step of modulating or deflecting blue light (for example, wavelength 458 nm) or near-ultraviolet light (for example, wavelength 351 nm) according to a signal to be recorded, condensing and exposing with an objective lens 203, and then developing and exposing It is manufactured by a developing step of forming a pattern or a groove called a pit by removing 204.

【0004】記録密度を高めるには、より小さいピット
や狭い溝を形成する必要がある。例えば、4.7GBの
容量を持つDVDでは、最小ピットの大きさは、長さ
0.4μm、幅0.3μm程度であり、25GB程度の
容量を達成するには、長さ0.18μm、幅0.15μ
m程度のピットを形成する必要がある。形成されるピッ
トの大きさは、記録光の集光スポット径に依存し、より
小さなピットを形成するには、より小さな集光スポット
径が必要となる。
In order to increase the recording density, it is necessary to form smaller pits and narrow grooves. For example, in a DVD having a capacity of 4.7 GB, the minimum pit size is about 0.4 μm in length and about 0.3 μm in width, and to achieve a capacity of about 25 GB, the length is 0.18 μm in width and about 0.18 μm in width. 0.15μ
It is necessary to form about m pits. The size of the formed pit depends on the diameter of the focused spot of the recording light, and a smaller focused spot diameter is required to form a smaller pit.

【0005】一般的に集光スポット径は、記録光の波長
に比例し、開口数に反比例する。しかし、開口数に関し
て言えば、従来から既に0.9以上の対物レンズを使っ
て集光しており、これをさらに大きくすることは難し
い。そこで、波長が300nmよりも短い遠紫外線光を
記録光として用い、短波長化により集光スポット径を小
さくする試みがなされている。
In general, the diameter of a focused spot is proportional to the wavelength of recording light and inversely proportional to the numerical aperture. However, in terms of the numerical aperture, the light has been condensed using an objective lens of 0.9 or more, and it is difficult to further increase it. Therefore, an attempt has been made to use far ultraviolet light having a wavelength shorter than 300 nm as recording light and to reduce the focused spot diameter by shortening the wavelength.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、従来か
ら用いられてきたノボラック樹脂を主成分とするフォト
レジストは、この波長域で大きな吸収を示し、本来起こ
るべき感光過程よりも、光エネルギーが吸収により熱エ
ネルギーに変換されて昇温し、変質する過程が優勢を占
め、フォトレジストとしての機能が失われるためこの波
長域での適用が難しい。
However, a photoresist mainly composed of novolak resin, which has been conventionally used, shows a large absorption in this wavelength range, and the light energy is absorbed by the absorption rather than the photosensitive process which should occur originally. The process of converting into thermal energy, raising the temperature, and altering the properties is dominant, and the function as a photoresist is lost, so that application in this wavelength range is difficult.

【0007】そこで、遠紫外線のエキシマレーザー用に
用意されているポリビニルフェノール(PVP)やポリ
メチルメタアクリレート(PMMA)等を主成分とする
化学増幅型フォトレジストの適用が試みられている。し
かし、従来のノボラック樹脂フォトレジストは、露光さ
れた光のエネルギーに応じてアルカリ性現像液への可溶
化反応が進行するが、化学増幅型フォトレジストでは、
露光された光のエネルギーにより発生するプロトン
(酸)が触媒となって露光後のベークによってアルカリ
性現像液への可溶化が促進され、最終的な現像後の形状
が決まる。
Therefore, application of a chemically amplified photoresist mainly containing polyvinyl phenol (PVP), polymethyl methacrylate (PMMA), or the like prepared for a deep ultraviolet excimer laser has been attempted. However, in the conventional novolak resin photoresist, a solubilization reaction in an alkaline developer proceeds according to the energy of the exposed light, but in a chemically amplified photoresist,
Protons (acids) generated by the energy of the exposed light act as catalysts to promote the solubilization in an alkaline developer by baking after exposure, and the final shape after development is determined.

【0008】そのため、塩基物が侵入すると、発生した
プロトンが中和反応によりトラップされて失活し、触媒
としての機能を成さず、結果としてフォトレジストの感
度が変化したのと同じ効果を持ち、現像で形成される形
状が変化する。そのため、従来基材に用いられてきたソ
ーダガラスは、それ自体が塩基物を含むため、直接塗布
する場合、フォトレジストに拡散して同様にプロトンの
失活を起こす原因となる。また、雰囲気中に存在する塩
基物濃度の管理が必要となる。
Therefore, when a base substance enters, the generated protons are trapped and deactivated by the neutralization reaction, do not function as a catalyst, and have the same effect as a change in the sensitivity of the photoresist as a result. The shape formed by development changes. Therefore, soda glass, which has been conventionally used as a base material, itself contains a basic substance, and when directly applied, is diffused into a photoresist and similarly causes deactivation of protons. Further, it is necessary to control the concentration of the base substance present in the atmosphere.

【0009】また、露光は内周から外周あるいは外周か
ら内周へ向かって順次行うため、露光の始端と終端では
時間差が発生する。その間の感度変化は現像後の形状に
不均一を引き起こすため、情報記録媒体の原盤としては
大きな問題となる。
Further, since the exposure is performed sequentially from the inner circumference to the outer circumference or from the outer circumference to the inner circumference, a time difference occurs between the start and end of the exposure. The change in sensitivity during that time causes unevenness in the shape after development, and thus poses a serious problem as an information recording medium master.

【0010】そこで、本発明の目的は、従来の安価なソ
ーダガラスを基材として用いても、基材から化学増幅型
フォトレジストに拡散侵入する塩基物を遮断し、フォト
レジストの失活を防いで、安定して情報記録媒体原盤を
作製する方法を提供することである。
Therefore, an object of the present invention is to prevent the inactivation of the photoresist by blocking the base substance that diffuses and invades the chemically amplified photoresist from the substrate, even if conventional inexpensive soda glass is used as the substrate. Accordingly, an object of the present invention is to provide a method for stably producing an information recording medium master.

【0011】[0011]

【課題を解決するための手段】本発明の情報記録媒体原
盤作製方法は、塩基物を含む基材であっても基材と感光
性材料として用いる化学増幅型フォトレジスト膜との間
に塩基物の拡散侵入を遮断する非塩基性材料の層を設け
ることで、基材から塩基物が侵入し、化学増幅型フォト
レジストの失活を起こすことを防止できる。また、フォ
トレジスト膜表面に非塩基性材料の保護膜を形成するこ
とでも、雰囲気中の塩基物がフォトレジストに侵入する
ことを防ぎ、失活を防ぐ効果が得られる。なお、ここで
いう非塩基性材料とは、フォトレジスト膜に塩基物を拡
散させず、かつフォトレジストやシンナーと反応して塩
基物を発生することが無い材料を意味する。
According to the present invention, there is provided a method for producing a master for an information recording medium, wherein a base material is present between a base material and a chemically amplified photoresist film used as a photosensitive material even if the base material contains the base material. By providing a layer of a non-basic material that blocks the diffusion and invasion of the base material, it is possible to prevent a base substance from invading from the base material and deactivating the chemically amplified photoresist. Also, by forming a protective film of a non-basic material on the surface of the photoresist film, it is possible to prevent a base substance in the atmosphere from invading the photoresist and to obtain an effect of preventing deactivation. Here, the non-basic material means a material that does not diffuse a base material into a photoresist film and does not react with a photoresist or a thinner to generate a base material.

【0012】[0012]

【発明の実施の形態】以下、本発明の情報記録媒体原盤
作製方法における実施の形態について、図面を参照しな
がら説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the method for producing an information recording medium master according to the present invention will be described below with reference to the drawings.

【0013】図1は、本発明の実施の形態における情報
記録媒体原盤作製方法を説明する概略図である。まず製
膜工程として、表面洗浄を済ませたソーダガラス基材1
01上に、化学的気相成長法(CVD法)により二酸化
珪素からなる透明隔離層102を形成する。塗布工程と
して、PVP系化学増幅型フォトレジストをスピンコー
ト法により塗布し、加熱してシンナーを十分蒸発させて
略70nmの厚みでフォトレジスト膜103を形成す
る。
FIG. 1 is a schematic diagram for explaining a method for producing an information recording medium master according to an embodiment of the present invention. First, as a film forming process, a soda glass substrate 1 whose surface has been cleaned
A transparent isolation layer 102 made of silicon dioxide is formed on the substrate 01 by a chemical vapor deposition method (CVD method). As a coating step, a PVP-based chemically amplified photoresist is applied by a spin coating method, and the thinner is sufficiently evaporated by heating to form a photoresist film 103 having a thickness of about 70 nm.

【0014】保護膜作製工程として、非塩基性材料であ
る水溶性のポリビニル系ポリマー(例えば東京応化工業
製TSP−5A)をスピンコート法により塗布し、乾燥
させて保護膜104を形成する。この水溶性ポリビニル
ポリマーは、それ自身に塩基物を含有せず、レジストあ
るいは大気中物質と反応して塩基物を発生することもな
い。
In the protective film forming step, a water-soluble polyvinyl-based polymer (for example, TSP-5A manufactured by Tokyo Ohka Kogyo Co., Ltd.), which is a non-basic material, is applied by spin coating and dried to form the protective film 104. The water-soluble polyvinyl polymer itself does not contain a base and does not react with a resist or a substance in the atmosphere to generate a base.

【0015】なお、保護膜104の膜厚は、塗布したフ
ォトレジスト膜の膜厚と合せて、後の記録工程において
記録光の集光された焦点深度内に収まるよう300nm
以下にするのが望ましい。保護膜104により、フォト
レジスト膜103は外部雰囲気から隔離され、雰囲気中
の塩基物がフォトレジスト膜103に侵入することが防
がれる。
The thickness of the protective film 104 is adjusted to 300 nm in accordance with the thickness of the applied photoresist film so as to be within the focal depth where the recording light is condensed in a later recording step.
It is desirable to do the following. The protective film 104 isolates the photoresist film 103 from the external atmosphere, and prevents a base substance in the atmosphere from entering the photoresist film 103.

【0016】また、透明隔離層102を用いた二酸化珪
素は、酸素と珪素の共有結合体であり、塩基を含まず、
またフォトレジストやそのシンナーと反応して塩基物を
生成する事もない。そのため、ソーダガラス基材101
中の塩基物がフォトレジスト膜103に拡散して侵入す
るのを防ぐ。
The silicon dioxide using the transparent isolation layer 102 is a covalent bond of oxygen and silicon, does not contain a base,
Further, it does not react with the photoresist or its thinner to produce a base. Therefore, the soda glass substrate 101
Prevents the base substance from diffusing and entering the photoresist film 103.

【0017】また、透明隔離層102の膜厚は、後の記
録工程での記録波長に対するソーダガラス基材101の
屈折率と、保護膜、フォトレジストそれぞれの屈折率と
膜厚を考慮して、記録光の反射率が小さくなるように設
定するのが望ましい。
The thickness of the transparent isolation layer 102 is determined in consideration of the refractive index of the soda glass substrate 101 with respect to the recording wavelength in the subsequent recording step, and the respective refractive indices and thicknesses of the protective film and the photoresist. It is desirable to set so that the reflectance of the recording light becomes small.

【0018】次に、記録工程として保護膜103を通し
て、記録すべき信号に応じて変調または偏向されたアル
ゴンイオンレーザーの第2高調波を用いた遠紫外線レー
ザー(波長248nm)を対物レンズ105により集光
して露光する。なお、記録工程の前に、再度加熱処理を
施し、フォトレジスト中のプロトンを拡散させ、濃度分
布を均一にするのが望ましい。
Next, a deep ultraviolet laser (wavelength: 248 nm) using the second harmonic of an argon ion laser modulated or deflected according to a signal to be recorded is collected by the objective lens 105 through the protective film 103 as a recording step. Light and expose. Before the recording step, it is desirable to perform a heat treatment again to diffuse the protons in the photoresist to make the concentration distribution uniform.

【0019】記録工程後、加熱処理工程として、発生し
たプロトンを触媒としてフォトレジストのアルカリ可溶
化反応を促進させる。次に保護膜除去工程として、基材
を回転させながら純水をかけ、水溶性の保護膜を溶解除
去する。そして、現像工程として、基材を回転させなが
らアルカリ性現像液により露光部106を溶解して除去
し、再度純水で濯いで現像液を洗い流した後、回転させ
て振り切り乾燥させることにより、ピットパターンを持
った情報記録媒体原盤を作製する。
After the recording step, as a heat treatment step, the generated proton is used as a catalyst to accelerate the alkali solubilization reaction of the photoresist. Next, as a protective film removing step, pure water is applied while rotating the base material to dissolve and remove the water-soluble protective film. Then, as a developing step, the exposed portion 106 is dissolved and removed with an alkaline developer while rotating the substrate, and the developer is rinsed again with pure water to wash off the developer, and then rotated and shaken off to dry the pit pattern. To produce an information recording medium master having

【0020】なお、本実施の形態では、二酸化珪素を透
明隔離層の材料として用いたが、酸化アルミニウム等の
非塩基性共有結合体の無機材料でも、フォトレジストや
シンナーと反応して塩基物を発生することが無ければ、
透明隔離層の材料として用いて同様の効果を得ることが
できる。また、フォトレジストやシンナーと反応して塩
基物を発生しない非水溶性材料の有機ポリマー(例えば
シプレイ製AR2)でも同様の効果を得ることができ
る。
In this embodiment, silicon dioxide is used as the material of the transparent isolation layer. However, even in the case of an inorganic material of a non-basic covalent bond such as aluminum oxide, it reacts with a photoresist or a thinner to convert a basic substance. If not,
A similar effect can be obtained when used as a material for the transparent isolation layer. A similar effect can also be obtained with an organic polymer of a water-insoluble material that does not generate a base substance by reacting with a photoresist or a thinner (for example, AR2 manufactured by Shipley).

【0021】[0021]

【発明の効果】本発明の情報記録媒体原盤作製方法によ
れば、化学増幅型フォトレジストを用いても、基材から
塩基物がフォトレジストに侵入して失活させることが防
止できる。その結果、原盤ごとの形状のばらつきを抑
え、各原盤内での形状のばらつきも抑えて、安定した情
報記録媒体原盤が作製できる。
According to the method for producing an information recording medium master of the present invention, even when a chemically amplified photoresist is used, it is possible to prevent a base substance from entering the photoresist from the substrate and deactivating the photoresist. As a result, variations in the shape of each master are suppressed, and variations in the shape within each master are also suppressed, so that a stable information recording medium master can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態における情報記録媒体原盤
作製方法を説明する概略図
FIG. 1 is a schematic diagram illustrating a method for producing an information recording medium master according to an embodiment of the present invention.

【図2】従来の情報記録媒体原盤作製方法を説明する概
略図
FIG. 2 is a schematic diagram illustrating a conventional method for producing a master of an information recording medium.

【符号の説明】[Explanation of symbols]

101 石英ガラス基材 102 透明隔離層 103 フォトレジスト膜 104 保護膜 105 対物レンズ 106 露光部 201 ソーダガラス基材 202 フォトレジスト膜 203 対物レンズ 204 露光部 DESCRIPTION OF SYMBOLS 101 Quartz glass base material 102 Transparent isolation layer 103 Photoresist film 104 Protective film 105 Objective lens 106 Exposure part 201 Soda glass base material 202 Photoresist film 203 Objective lens 204 Exposure part

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】基材上に、非塩基性材料膜が積層され、前
記非塩基性材料膜上に化学増幅型フォトレジスト樹脂に
より所望のパターンが形成された情報記録媒体原盤。
1. An information recording medium master in which a non-basic material film is laminated on a base material, and a desired pattern is formed on the non-basic material film by a chemically amplified photoresist resin.
【請求項2】基材が塩基性物質含む材料あるいはソーダ
ガラスであることを特徴とする請求項1記載の情報記録
媒体原盤。
2. The information recording medium master according to claim 1, wherein the base material is a material containing a basic substance or soda glass.
【請求項3】非塩基性材料が、二酸化珪素であることを
特徴とする請求項1記載の情報記録媒体原盤。
3. The information recording medium master according to claim 1, wherein the non-basic material is silicon dioxide.
【請求項4】非塩基性材料が、酸化アルミニウムである
ことを特徴とする請求項1記載の情報記録媒体原盤。
4. The information recording medium master according to claim 1, wherein the non-basic material is aluminum oxide.
【請求項5】非塩基性材料が、非水溶性の有機ポリマー
であることを特徴とする請求項1記載の情報記録媒体原
盤。
5. The information recording medium master according to claim 1, wherein the non-basic material is a water-insoluble organic polymer.
【請求項6】基板上に非塩基性材料の膜を形成する製膜
工程と、感光性材料として化学増幅型フォトレジストを
塗布して加熱乾燥する塗布工程と、波長が300nm以
下の記録光を記録すべき信号に応じて変調または偏向し
て集光露光する記録工程と、露光後の加熱処理工程と、
前記化学増幅型フォトレジストを現像して所望のパター
ンを形成する現像工程からなる情報記録媒体原盤作製方
法。
6. A film forming step of forming a film of a non-basic material on a substrate, a coating step of applying a chemically amplified photoresist as a photosensitive material and drying by heating, and a recording light having a wavelength of 300 nm or less. A recording step of condensing and exposing by modulating or deflecting according to a signal to be recorded, and a heat treatment step after exposure,
A method for producing an information recording medium master comprising a developing step of developing the chemically amplified photoresist to form a desired pattern.
【請求項7】非塩基性材料が記録光の波長に対して略透
明であることを特徴とする請求項6記載の情報記録媒体
原盤作製方法。
7. The method according to claim 6, wherein the non-basic material is substantially transparent to the wavelength of the recording light.
【請求項8】塗布工程の後、記録光の波長に対し略透明
な水溶性材料を300nm以下の厚みで形成する保護膜
作製工程を行い、記録工程と加熱処理工程の後、中性水
溶液で水溶性材料を除去する保護膜除去工程を行った後
に、現像工程を行うことを特徴とする請求項6記載の情
報記録媒体原盤作製方法。
8. After the coating step, a protective film forming step of forming a water-soluble material substantially transparent to the wavelength of the recording light to a thickness of 300 nm or less is performed. 7. The method according to claim 6, wherein the developing step is performed after the protective film removing step for removing the water-soluble material.
【請求項9】水溶性材料が、有機ポリマーであることを
特徴とする請求項8記載の情報記録媒体原盤作製方法。
9. The method according to claim 8, wherein the water-soluble material is an organic polymer.
【請求項10】水溶性材料の塗布工程と記録工程の間
で、加熱処理を行うことを特徴とする請求項8記載の情
報記録媒体原盤作製方法。
10. The method according to claim 8, wherein a heat treatment is performed between the step of applying the water-soluble material and the step of recording.
JP2000157752A 2000-05-29 2000-05-29 Information recording medium master disk and method for manufacturing the same Pending JP2001344831A (en)

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Publication Number Publication Date
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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003058616A1 (en) * 2002-01-08 2003-07-17 Tdk Corporation Method for manufacturing stamper for information medium manufacture, stamper, and stamper intermediate with master disk
WO2003058614A1 (en) * 2002-01-08 2003-07-17 Tdk Corporation Method for manufacturing stamper for information medium manufacture, stamper, and photoresist master disk
WO2003058615A1 (en) * 2002-01-08 2003-07-17 Tdk Corporation Method for manufacturing stamper for information medium manufacture, stamper, and photoresist master disk
US7297472B2 (en) 2002-03-11 2007-11-20 Tdk Corporation Processing method for photoresist master, production method for recording medium-use mater, production method for recording medium, photoresist master, recording medium-use master and recording medium
US9082584B2 (en) 2008-08-18 2015-07-14 Mapper Lithography Ip B.V. Charged particle beam lithography system and target positioning device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003058616A1 (en) * 2002-01-08 2003-07-17 Tdk Corporation Method for manufacturing stamper for information medium manufacture, stamper, and stamper intermediate with master disk
WO2003058614A1 (en) * 2002-01-08 2003-07-17 Tdk Corporation Method for manufacturing stamper for information medium manufacture, stamper, and photoresist master disk
WO2003058615A1 (en) * 2002-01-08 2003-07-17 Tdk Corporation Method for manufacturing stamper for information medium manufacture, stamper, and photoresist master disk
US7204188B2 (en) 2002-01-08 2007-04-17 Tdk Corporation Method of manufacturing stamper for manufacturing information medium, stamper, and photoresist master
US7297472B2 (en) 2002-03-11 2007-11-20 Tdk Corporation Processing method for photoresist master, production method for recording medium-use mater, production method for recording medium, photoresist master, recording medium-use master and recording medium
US9082584B2 (en) 2008-08-18 2015-07-14 Mapper Lithography Ip B.V. Charged particle beam lithography system and target positioning device

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