JP2001339078A - Solar cell device - Google Patents
Solar cell deviceInfo
- Publication number
- JP2001339078A JP2001339078A JP2000159045A JP2000159045A JP2001339078A JP 2001339078 A JP2001339078 A JP 2001339078A JP 2000159045 A JP2000159045 A JP 2000159045A JP 2000159045 A JP2000159045 A JP 2000159045A JP 2001339078 A JP2001339078 A JP 2001339078A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- solar cell
- bus bar
- semiconductor substrate
- finger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は太陽電池素子の構造
に関し、特に裏面電極を改良した太陽電池素子に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a solar cell element, and more particularly to a solar cell element having an improved back electrode.
【０００２】[0002]
【従来の技術】従来の太陽電池素子を図３に示す。図３
において、１は一導電型（例えばＰ型）を示す半導体基
板、２は半導体基板１の表面部分にリン原子が高濃度に
拡散された他の導電型を呈する領域、３はＡｌとＳｉの
合金化により形成されたＰ+領域である。2. Description of the Related Art A conventional solar cell device is shown in FIG. FIG.
In the figure, 1 is a semiconductor substrate showing one conductivity type (for example, P type), 2 is a region showing another conductivity type in which phosphorus atoms are diffused at a high concentration in a surface portion of the semiconductor substrate 1, and 3 is an alloy of Al and Si. This is a P + region formed by the chemical conversion.
【０００３】半導体基板１の表面側には、反射防止膜４
が形成されている。この反射防止膜４は受光面電極７に
相当する部分がエッチングされ、もしくはその上から受
光面電極７が形成される。半導体基板１の裏面側には、
Ａｌを含んだＡｇを主体としたフィンガー部とバスバー
部とから成る第一電極５と、第一電極５のバスバー部を
除く裏面側全面を覆うように形成されたＡｌから成る第
二電極６が形成されている。On the front side of the semiconductor substrate 1, an antireflection film 4
Are formed. The portion of the antireflection film 4 corresponding to the light receiving surface electrode 7 is etched, or the light receiving surface electrode 7 is formed thereon. On the back side of the semiconductor substrate 1,
A first electrode 5 composed of a finger portion mainly composed of Ag containing Al and a bus bar portion, and a second electrode 6 composed of Al formed so as to cover the entire back surface of the first electrode 5 excluding the bus bar portion are provided. Is formed.
【０００４】この太陽電池のＰ+領域３、受光面電極
７、第一電極５、第二電極６の形成方法には自動化が容
易で生産性が高いことから、印刷法が広く用いられてい
る。この印刷法は、ＡｇやＡｌなどの金属粉末とガラス
紛未などとを有機結合剤、有機溶剤と混ぜたペースト状
のものをスクリーン印刷法などで塗布して焼成する方法
である。A printing method is widely used for forming the P + region 3, the light receiving surface electrode 7, the first electrode 5, and the second electrode 6 of this solar cell because automation is easy and productivity is high. . This printing method is a method in which a paste in which a metal powder such as Ag or Al and glass powder are mixed with an organic binder and an organic solvent is applied by a screen printing method or the like and fired.
【０００５】[0005]
【発明が解決しようとする課題】ところが、この従来の
太陽電池素子では、裏面側の第二電極６を構成するＡｌ
を裏面側の全面に塗布して焼成すると、Ａｌ電極層６と
シリコンなどから成る半導体基板１の熱膨張係数の違い
から、焼成後に半導体基板１が反り、焼成後のカセット
収納や次工程での素子割れや欠けが発生し、工程歩留り
を低下させるという問題があった。However, in this conventional solar cell device, the Al constituting the second electrode 6 on the back surface side is not provided.
Is applied to the entire back surface side and fired, the semiconductor substrate 1 warps after firing due to a difference in the thermal expansion coefficient between the Al electrode layer 6 and the semiconductor substrate 1 made of silicon or the like, and the cassette is stored after firing and in the next step. There has been a problem that element cracking or chipping occurs, and the process yield decreases.
【０００６】また、焼成は表面電極７と同時に行われる
ため、焼成温度は表面電極７がＮ型領域の浅い拡散層２
を突き抜けないような温度である６００℃から８００℃
に制限される。この範囲の温度でＡｌを焼成すると直径
１〜２ｍｍ程度のＡｌ玉が発生し、次工程での素子割れ
や欠けが発生し、工程歩留りを低下させるという問題が
あった。すなわち、電極焼成時に、Ａｌが一旦溶融した
後、固化するとき周りのＡｌが集まり玉となる。太陽電
池セルの裏面にＡｌ玉があると、セル全面あるいは一部
に加圧するような工程があると、Ａｌ玉を支点にセルが
割れたり欠けたりする。Since the firing is performed simultaneously with the surface electrode 7, the firing temperature is set such that the surface electrode 7 has a shallow diffusion layer 2 having an N-type region.
600 ° C to 800 ° C, which is a temperature that does not pass through
Is limited to When Al is fired at a temperature in this range, Al balls having a diameter of about 1 to 2 mm are generated, and there is a problem in that element cracking or chipping occurs in the next step, thereby lowering the process yield. That is, at the time of electrode baking, after Al is once melted and solidified, surrounding Al gathers to form a ball. If there is an Al ball on the back surface of the solar cell, and if there is a step of pressing the entire surface or a part of the cell, the cell may be cracked or chipped around the Al ball as a fulcrum.
【０００７】本発明は、このような従来技術の問題点に
鑑みてなされたものであり、電極用ペースト材料を焼き
付けて形成する際に、半導体基板の反りによる歩留り低
下を招くという従来の問題点を解消した太陽電池素子を
提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has a problem in that the yield is reduced due to warpage of a semiconductor substrate when a paste material for electrodes is formed by baking. It is an object of the present invention to provide a solar cell element which has solved the above.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、請求項１に係る発明では、半導体基板の一主面側に
バスバー部とフィンガー部とから成る第一電極をＡｌを
含むＡｇを主体とした金属材料で形成し、この第一電極
のフィンガー部を覆うようにその上にＡｌから成る第二
電極を形成した太陽電池素子において、前記フィンガー
部上の第二電極をドット状に形成する。In order to achieve the above object, according to the first aspect of the present invention, a first electrode comprising a bus bar portion and a finger portion is formed on one main surface side of a semiconductor substrate by using Ag containing Al. In a solar cell element formed of a metallic material mainly and having a second electrode made of Al formed thereon so as to cover the finger portion of the first electrode, the second electrode on the finger portion is formed in a dot shape. I do.
【０００９】また、請求項２に係る発明では、半導体基
板の一主面側にバスバー部とフィンガー部とから成る第
一電極をＡｌを含むＡｇを主体とした金属材料で形成
し、この第一電極のフィンガー部を覆うようにその上に
Ａｌから成る第二電極を形成した太陽電池素子におい
て、前記第二電極を帯状に形成すると共に、前記第一電
極のバスバー部に対して平行に形成する。In the invention according to a second aspect, the first electrode comprising the bus bar portion and the finger portion is formed on one main surface side of the semiconductor substrate with a metal material mainly composed of Ag containing Al. In a solar cell element in which a second electrode made of Al is formed thereon so as to cover the finger portion of the electrode, the second electrode is formed in a band shape, and is formed in parallel with the bus bar portion of the first electrode. .
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施形態を添付図
面に基づき詳細に説明する。図１は請求項１に係る太陽
電池素子の構造を示す平面図である。請求項１に係る太
陽電池素子の断面構造は、図３に示す従来の太陽電池素
子の断面構造と同様である。すなわち、請求項１に係る
太陽電子素子でも、図３に示すように、半導体基板１
は、厚み０．３ｍｍ程度のＰ型単結晶シリコンやＰ型多
結晶シリコンなどから成る。この半導体基板１内には、
Ｎ型領域２とＰ+型領域３があり、Ｎ型領域２はＰ型の
シリコン基板１を拡散炉中に配置して、オキシ塩化リン
（ＰＯＣｌ3）中で加熱することによって、シリコン基
板１の全体の表面部にリン原子を拡散させ、その後に側
面部と裏面部の拡散層を除去することにより、厚み０．
３〜０．４μｍ程度に形成する。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing the structure of the solar cell element according to the first embodiment. The sectional structure of the solar cell element according to claim 1 is the same as the sectional structure of the conventional solar cell element shown in FIG. That is, even in the solar electronic device according to claim 1, as shown in FIG.
Is made of P-type single-crystal silicon or P-type polycrystalline silicon having a thickness of about 0.3 mm. In the semiconductor substrate 1,
There are an N-type region 2 and a P + -type region 3. The N-type region 2 is formed by placing a P-type silicon substrate 1 in a diffusion furnace and heating it in phosphorus oxychloride (POCl 3 ). By diffusing the phosphorus atoms into the entire surface of the substrate, and then removing the diffusion layers on the side surface and the back surface, a thickness of 0.1 μm is obtained.
It is formed to have a thickness of about 3 to 0.4 μm.
【００１１】なお、この半導体基板１は単結晶ガリウム
砒素などで形成してもよい。The semiconductor substrate 1 may be formed of single crystal gallium arsenide or the like.
【００１２】また、半導体基板１の裏面側には、アルミ
ニウム（Ａｌ）ペーストを印刷して焼成することによ
り、Ｐ+層３を形成する。On the back side of the semiconductor substrate 1, a P + layer 3 is formed by printing and firing an aluminum (Al) paste.
【００１３】次に、半導体基板１の一主面側に反射防止
膜４を形成する。この反射防止膜４はたとえば窒化シリ
コン膜などからなり、シランとアンモニアとの混合ガス
を用いたプラズマＣＶＤ法などで形成される。この反射
防止膜４は、半導体基板１の表面で光が反射するのを防
止して、半導体基板１内に光を有効に取り込むために設
ける。Next, an antireflection film 4 is formed on one main surface of the semiconductor substrate 1. The antireflection film 4 is made of, for example, a silicon nitride film or the like, and is formed by a plasma CVD method using a mixed gas of silane and ammonia. The antireflection film 4 is provided to prevent light from being reflected on the surface of the semiconductor substrate 1 and to effectively take light into the semiconductor substrate 1.
【００１４】この反射防止膜４上には、バスバー部とフ
ィンガー部とから成る表面電極７が形成されている。こ
の表面電極７は、たとえば銀粉末、ガラスフリット、結
合剤、および溶剤から成るペーストをスクリーン印刷し
て形成される。６００℃〜８００℃程度の温度で焼き付
け、全体を半田層で被覆することにより形成される。On the antireflection film 4, a surface electrode 7 composed of a bus bar portion and a finger portion is formed. The surface electrode 7 is formed by screen-printing a paste made of, for example, silver powder, glass frit, a binder, and a solvent. It is formed by baking at a temperature of about 600 ° C. to 800 ° C. and covering the whole with a solder layer.
【００１５】裏面側にはバスバー部とフィンガー部とか
ら成る第一電極５をＡｌを含むＡｇを主体とした金属材
料で形成し、この第一電極５のフィンガー部を覆うよう
にその上にＡｌから成る第二電極６を形成する。Ａｌか
ら成る第二電極６は、１辺が０．２ｍｍ〜１．５ｍｍの
多角形、あるいは直径が０．２ｍｍ〜１．５ｍｍの円形
で、０．１ｍｍから１ｍｍの間隔でドット状に設けられ
る。On the back side, a first electrode 5 composed of a bus bar portion and a finger portion is formed of a metal material mainly composed of Ag containing Al, and Al is formed thereon so as to cover the finger portion of the first electrode 5. Is formed. The second electrode 6 made of Al is a polygon having a side of 0.2 mm to 1.5 mm or a circle having a diameter of 0.2 mm to 1.5 mm, and is provided in a dot shape at intervals of 0.1 mm to 1 mm. .
【００１６】表面電極７と第一電極５と第二電極６は、
６００℃〜８００℃程度の温度で焼き付けて形成され
る。The surface electrode 7, the first electrode 5, and the second electrode 6
It is formed by baking at a temperature of about 600C to 800C.
【００１７】図２は、請求項２に係る太陽電池素子の一
実施形態を示す図である。この請求項２に係る太陽電池
素子も請求項１に係る太陽電池素子とほぼ同様である。
つまり、半導体基板１の裏面側にはバスバー部とフィン
ガー部とから成る第一電極５をＡｌを含むＡｇを主体と
した金属材料で形成し、この第一電極５のフィンガー部
を覆うようにその上にＡｌから成る第二電極６を形成す
る。この請求項２に係る太陽電池素子では、Ａｌから成
る第二電極６は、幅が０．２ｍｍ〜１．５ｍｍで、間隔
が０．１ｍｍから１ｍｍの帯状でかつ上記第一電極のバ
スバー部に対して平行に設けられる。FIG. 2 is a view showing one embodiment of the solar cell element according to the second aspect. The solar cell element according to the second aspect is substantially the same as the solar cell element according to the first aspect.
That is, the first electrode 5 including the bus bar portion and the finger portion is formed of a metal material mainly composed of Ag containing Al on the back surface side of the semiconductor substrate 1, and the first electrode 5 is formed so as to cover the finger portion of the first electrode 5. A second electrode 6 made of Al is formed thereon. In the solar cell element according to the second aspect, the second electrode 6 made of Al has a width of 0.2 mm to 1.5 mm, an interval of 0.1 mm to 1 mm, and is formed on the bus bar portion of the first electrode. They are provided in parallel to each other.
【００１８】[0018]
【実施例】図１に示すように、Ａｌから成る第二電極６
を１辺が１５０ｍｍ角で厚みが０．３ｍｍの多結晶シリ
コン基板に、１辺が０．２５ｍｍ、０．５ｍｍ、１．０
ｍｍの正方形で０．２５ｍｍの間隔でドット状に形成し
た場合、基板の反りが表１に示すように、１辺が０．２
５ｍｍの場合１．０ｍｍに、１辺が０．５ｍｍの場合
１．４ｍｍに、１辺が１．０ｍｍの場合２．０ｍｍに低
減された。なお、基板の反りは、図４に示すように、基
板１の中央部の裏面側と基板端部の上面側との間隔を測
定したものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG.
Was placed on a polycrystalline silicon substrate having a side of 150 mm square and a thickness of 0.3 mm, and a side of 0.25 mm, 0.5 mm, 1.0 mm
When the substrate is formed in a dot shape at intervals of 0.25 mm with a square of 0.2 mm, as shown in Table 1, the warpage of the substrate is 0.2 mm on one side.
In the case of 5 mm, it was reduced to 1.0 mm, when one side was 0.5 mm, and reduced to 1.4 mm when one side was 1.0 mm. As shown in FIG. 4, the warpage of the substrate is obtained by measuring the distance between the rear surface at the center of the substrate 1 and the upper surface at the edge of the substrate.
【００１９】また、図２に示すように、Ａｌから成る第
二電極６を１５０ｍｍ角で厚みが０．３ｍｍの多結晶シ
リコン基板に、幅が０．２５ｍｍ、０．５ｍｍ、１．０
ｍｍで間隔が０．２５ｍｍの帯状でかつ上記第一電極の
バスバー部に対して平行に形成した場合、バスバーと垂
直方向（フィンガーと平行方向）の基板の反りは、表１
に示すように、幅が０．２５ｍｍの場合０．３ｍｍに、
幅が０．５ｍｍの場合０．５ｍｍに、幅が１．０ｍｍの
場合１．０ｍｍに低減された。As shown in FIG. 2, a second electrode 6 made of Al is placed on a polycrystalline silicon substrate of 150 mm square and 0.3 mm thick with widths of 0.25 mm, 0.5 mm and 1.0 mm.
In the case of a strip having a width of 0.25 mm and a width of 0.25 mm and formed parallel to the bus bar portion of the first electrode, the warpage of the substrate in the direction perpendicular to the bus bar (parallel to the finger) is as shown in Table 1.
As shown in the figure, when the width is 0.25 mm, it becomes 0.3 mm,
The width was reduced to 0.5 mm when the width was 0.5 mm, and to 1.0 mm when the width was 1.0 mm.
【００２０】また、Ａｌ電極を分割し、その幅を１．０
ｍｍにしたことで、直径２ｍｍ程度のＡｌ玉の発生がな
くない、歩留りが向上した。The Al electrode is divided and its width is set to 1.0
By setting the diameter in mm, there was no generation of Al balls having a diameter of about 2 mm, and the yield was improved.
【００２１】[0021]
【表１】 [Table 1]
【００２２】[0022]
【発明の効果】以上のように、請求項１に係る太陽電池
素子によれば、半導体基板の一主面側にバスバー部とフ
ィンガー部とから成る第一電極をＡｌを含むＡｇを主体
とした金属材料で形成し、この第一電極を覆うようにそ
の上にＡｌから成る第二電極を形成した太陽電池素子に
おいて、前記フィンガー部上の第二電極をドット状に形
成したことから、シリコン基板の反りを低減でき、また
Ａｌ電極幅を１．５ｍｍ以下にすることで、Ａｌ玉の発
生を抑えることができ、工程歩留りが向上する。As described above, according to the solar cell element of the first aspect, the first electrode composed of the bus bar portion and the finger portion is formed mainly of Ag containing Al on one main surface side of the semiconductor substrate. In a solar cell element formed of a metal material and having a second electrode made of Al formed thereon so as to cover the first electrode, the second electrode on the finger portion was formed in a dot shape. When the Al electrode width is 1.5 mm or less, the generation of Al balls can be suppressed, and the process yield is improved.
【００２３】また、請求項２に係る太陽電池素子によれ
ば、半導体基板の一主面側にバスバー部とフィンガー部
とから成る第一電極をＡｌを含むＡｇを主体とした金属
材料で形成し、この第一電極のフィンガー部を覆うよう
にその上にＡｌから成る第二電極を形成した太陽電池素
子において、前記第二電極を帯状に形成すると共に、前
記第一電極のバスバー部に対して平行に形成したことか
ら、シリコン基板の反りを低減でき、またＡｌ電極幅を
１．５ｍｍ以下にすることで、Ａｌ玉の発生を抑えるこ
とができ、工程歩留りが向上する。Further, according to the solar cell element of the second aspect, the first electrode including the bus bar portion and the finger portion is formed on one main surface side of the semiconductor substrate with a metal material mainly containing Ag containing Al. In a solar cell element having a second electrode made of Al formed thereon so as to cover the finger portion of the first electrode, the second electrode is formed in a band shape, and the bus bar portion of the first electrode is formed. Since they are formed in parallel, the warpage of the silicon substrate can be reduced, and by setting the Al electrode width to 1.5 mm or less, the generation of Al balls can be suppressed, and the process yield is improved.
【図１】請求項１に係る発明の一実施形態を示す半導体
基板の一主面側の平面図である。FIG. 1 is a plan view of one main surface side of a semiconductor substrate according to an embodiment of the present invention.
【図２】請求項２に係る発明の一実施形態を示す半導体
基板の一主面側の平面図である。FIG. 2 is a plan view of one main surface side of a semiconductor substrate, showing one embodiment of the invention according to claim 2;
【図３】従来の太陽電池素子を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional solar cell element.
【図４】基板を反りの測定方法を示す図である。FIG. 4 is a view showing a method for measuring the warpage of a substrate.
１：Ｐ型シリコン基板、２：Ｎ型領域、３：Ｐ+型領
域、４：反射防止膜、５：第一電極、６：第二電極、
７：受光面電極1: P type silicon substrate, 2: N type region, 3: P + type region, 4: antireflection film, 5: first electrode, 6: second electrode,
7: Light receiving surface electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 白沢 勝彦 滋賀県八日市市蛇溝町長谷野1166番地の６ 京セラ株式会社滋賀工場八日市ブロック 内 Ｆターム(参考） 5F051 AA02 BA11 BA17 CB27 FA06 FA10 FA15 FA16 FA30 GA04 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Katsuhiko Shirasawa 6F, 1166 Haseno, Jabizo-cho, Yokaichi-shi, Shiga Prefecture F-term (reference) 5F051 AA02 BA11 BA17 CB27 FA06 FA10 FA04 5F051 AA02 BA11 BA17 FA04
Claims (2)
ィンガー部とから成る第一電極をＡｌを含むＡｇを主体
とした金属材料で形成し、この第一電極を覆うようにそ
の上にＡｌから成る第二電極を形成した太陽電池素子に
おいて、前記フィンガー部上の第二電極をドット状に形
成したことを特徴とする太陽電池素子。A first electrode comprising a bus bar portion and a finger portion is formed on one main surface side of a semiconductor substrate with a metal material mainly composed of Ag containing Al, and is formed thereon so as to cover the first electrode. A solar cell element having a second electrode formed of Al, wherein the second electrode on the finger portion is formed in a dot shape.
ィンガー部とから成る第一電極をＡｌを含むＡｇを主体
とした金属材料で形成し、この第一電極のフィンガー部
を覆うようにその上にＡｌから成る第二電極を形成した
太陽電池素子において、前記第二電極を帯状に形成する
と共に前記第一電極のバスバー部に対して平行に形成し
たことを特徴とする太陽電池素子。2. A first electrode comprising a bus bar portion and a finger portion is formed on one principal surface side of a semiconductor substrate with a metal material mainly composed of Ag containing Al, and is so formed as to cover the finger portion of the first electrode. A solar cell element having a second electrode made of Al formed thereon, wherein the second electrode is formed in a band shape and is formed parallel to a bus bar portion of the first electrode.
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| JP2000159045A JP4557370B2 (en) | 2000-05-29 | 2000-05-29 | Solar cell element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7829784B2 (en) | 2003-12-16 | 2010-11-09 | Sharp Kabushiki Kaisha | Solar battery and fabrication method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420752U (en) * | 1987-07-28 | 1989-02-01 | ||
| JPH04181782A (en) * | 1990-11-16 | 1992-06-29 | Tonen Corp | Rear electrode of solar cell and the method of connecting lead wire to said electrode |
| JP2000114556A (en) * | 1998-09-30 | 2000-04-21 | Sharp Corp | Solar battery and its manufacture |
-
2000
- 2000-05-29 JP JP2000159045A patent/JP4557370B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420752U (en) * | 1987-07-28 | 1989-02-01 | ||
| JPH04181782A (en) * | 1990-11-16 | 1992-06-29 | Tonen Corp | Rear electrode of solar cell and the method of connecting lead wire to said electrode |
| JP2000114556A (en) * | 1998-09-30 | 2000-04-21 | Sharp Corp | Solar battery and its manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7829784B2 (en) | 2003-12-16 | 2010-11-09 | Sharp Kabushiki Kaisha | Solar battery and fabrication method thereof |
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