JP2001332493A5 - - Google Patents

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Publication number
JP2001332493A5
JP2001332493A5 JP2000148393A JP2000148393A JP2001332493A5 JP 2001332493 A5 JP2001332493 A5 JP 2001332493A5 JP 2000148393 A JP2000148393 A JP 2000148393A JP 2000148393 A JP2000148393 A JP 2000148393A JP 2001332493 A5 JP2001332493 A5 JP 2001332493A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000148393A
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Japanese (ja)
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JP2001332493A (ja
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Publication date
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Priority to JP2000148393A priority Critical patent/JP2001332493A/ja
Priority claimed from JP2000148393A external-priority patent/JP2001332493A/ja
Publication of JP2001332493A publication Critical patent/JP2001332493A/ja
Publication of JP2001332493A5 publication Critical patent/JP2001332493A5/ja
Pending legal-status Critical Current

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JP2000148393A 2000-05-19 2000-05-19 レーザアニール方法および薄膜トランジスタの製造方法 Pending JP2001332493A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000148393A JP2001332493A (ja) 2000-05-19 2000-05-19 レーザアニール方法および薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000148393A JP2001332493A (ja) 2000-05-19 2000-05-19 レーザアニール方法および薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JP2001332493A JP2001332493A (ja) 2001-11-30
JP2001332493A5 true JP2001332493A5 (ru) 2007-08-23

Family

ID=18654432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000148393A Pending JP2001332493A (ja) 2000-05-19 2000-05-19 レーザアニール方法および薄膜トランジスタの製造方法

Country Status (1)

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JP (1) JP2001332493A (ru)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1300825C (zh) * 2004-07-21 2007-02-14 友达光电股份有限公司 制造多晶硅层的方法
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR101107166B1 (ko) 2010-03-12 2012-01-25 삼성모바일디스플레이주식회사 비정질 실리콘막의 결정화 방법
KR101278045B1 (ko) 2012-02-17 2013-06-24 주식회사 엘티에스 레이저 리프트 오프 방법
KR102388723B1 (ko) * 2015-08-07 2022-04-21 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
KR102463885B1 (ko) 2015-10-21 2022-11-07 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
KR101846477B1 (ko) * 2017-04-27 2018-04-09 재단법인 대구경북과학기술원 국소 열처리를 통한 트랜지스터 특성 복원방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276621A (ja) * 1988-04-27 1989-11-07 Mitsubishi Electric Corp ビームアニール装置
JP2522470B2 (ja) * 1993-02-25 1996-08-07 日本電気株式会社 薄膜集積回路の製造方法
JP3025408B2 (ja) * 1994-06-20 2000-03-27 シャープ株式会社 半導体素子の製造方法
JPH09260681A (ja) * 1996-03-23 1997-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH11243057A (ja) * 1998-02-26 1999-09-07 Sony Corp 半導体装置の製造方法および半導体装置の製造装置
JPH11330000A (ja) * 1998-05-13 1999-11-30 Matsushita Electric Ind Co Ltd 非単結晶薄膜のレーザーアニール方法

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