JP2001308458A5 - - Google Patents
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- JP2001308458A5 JP2001308458A5 JP2000127401A JP2000127401A JP2001308458A5 JP 2001308458 A5 JP2001308458 A5 JP 2001308458A5 JP 2000127401 A JP2000127401 A JP 2000127401A JP 2000127401 A JP2000127401 A JP 2000127401A JP 2001308458 A5 JP2001308458 A5 JP 2001308458A5
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- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000127401A JP4608731B2 (ja) | 2000-04-27 | 2000-04-27 | 半導体レーザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000127401A JP4608731B2 (ja) | 2000-04-27 | 2000-04-27 | 半導体レーザの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001308458A JP2001308458A (ja) | 2001-11-02 |
| JP2001308458A5 true JP2001308458A5 ( ) | 2006-12-28 |
| JP4608731B2 JP4608731B2 (ja) | 2011-01-12 |
Family
ID=18636999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000127401A Expired - Fee Related JP4608731B2 (ja) | 2000-04-27 | 2000-04-27 | 半導体レーザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4608731B2 ( ) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4936598B2 (ja) * | 2001-02-15 | 2012-05-23 | シャープ株式会社 | 窒化物半導体発光素子とその製法 |
| KR100580623B1 (ko) | 2003-08-04 | 2006-05-16 | 삼성전자주식회사 | 초격자 구조의 반도체층을 갖는 반도체 소자 및 그 제조방법 |
| US7217947B2 (en) * | 2004-08-06 | 2007-05-15 | Northrop Grumman Corporation | Semiconductor light source and method of making |
| US20060284163A1 (en) * | 2005-06-15 | 2006-12-21 | Bour David P | Single ELOG growth transverse p-n junction nitride semiconductor laser |
| JP4802314B2 (ja) * | 2006-01-24 | 2011-10-26 | シャープ株式会社 | 窒化物半導体発光素子とその製造方法 |
| WO2007132425A1 (en) * | 2006-05-17 | 2007-11-22 | Nxp B.V. | Quantum cascade surface emitting semiconductor laser device and method of manufacturing a semiconductor laser device |
| JP5918611B2 (ja) * | 2012-04-17 | 2016-05-18 | 日本電信電話株式会社 | 光半導体素子 |
| KR101743026B1 (ko) * | 2016-04-26 | 2017-06-15 | 광주과학기술원 | 자외선 발광 다이오드 및 이의 제조방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269369A (ja) * | 1986-05-16 | 1987-11-21 | Mitsubishi Cable Ind Ltd | 半導体発光装置 |
| DE4232860A1 (de) * | 1992-09-30 | 1994-03-31 | Siemens Ag | Halbleiterlaser mit einer zwischen zwei Resonatorspiegeln angeordneten aktiven Schicht und Verfahren zu seiner Herstellung |
| US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
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2000
- 2000-04-27 JP JP2000127401A patent/JP4608731B2/ja not_active Expired - Fee Related