JP2001307390A - Method and mechanism for sputtering - Google Patents

Method and mechanism for sputtering

Info

Publication number
JP2001307390A
JP2001307390A JP2000125729A JP2000125729A JP2001307390A JP 2001307390 A JP2001307390 A JP 2001307390A JP 2000125729 A JP2000125729 A JP 2000125729A JP 2000125729 A JP2000125729 A JP 2000125729A JP 2001307390 A JP2001307390 A JP 2001307390A
Authority
JP
Japan
Prior art keywords
rotating body
decrease
target
film
discharge time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000125729A
Other languages
Japanese (ja)
Inventor
Takahiro Kitai
崇博 北井
Toshiyuki Suemitsu
敏行 末光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000125729A priority Critical patent/JP2001307390A/en
Publication of JP2001307390A publication Critical patent/JP2001307390A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To solve the problem that film thickness increases more than needed and film thickness uniformity between disks in not in a normal rage when number of times that a disk mounted on a rotary body passes over target is increased as a means for adjusting film thickness corresponding to a decrease in filming rate, as to a sputtering device which forms a film on the disk mounted on the rotary body when the disk passes in front of the target plural times. SOLUTION: An integral discharging time and the quantity of a decrease in filming rate which are previously measured and the rotating speed of the rotary body 4 and the value of a decrease in filming rate are inputted to an arithmetic circuit 13 to obtain an integral discharging time when a film is formed on the disk and always monitor it; when the timing where the filming rate of the target 3 begins decrease is detected, the rotating speed of the rotary body 4 is obtained, the rotating speed of a motor 5 which drives the rotary body 4 so that the film thickness becomes constant is computed, and the value is supplied as a new rotating speed command value 9 for the motor 5.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、光ディスク製造装
置などにおいて、モータにより駆動する回転体に装着し
たディスクに、ターゲット正面を複数回通過する際に成
膜するスパッタリング方法及び装置に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering method and an apparatus for forming a film on a disk mounted on a rotating body driven by a motor when the disk passes a front surface of a target a plurality of times in an optical disk manufacturing apparatus and the like.

【0002】[0002]

【従来の技術】図3は従来のスパッタリング装置の機構
を示したもので、図3において、1はプラズマを発生さ
せ成膜を行う真空チャンバー、2は成膜されるディス
ク、3はディスク2を成膜するため、ディスク面と平行
に一定間隔を設けて配置されたターゲット、4はディス
ク2を装着しターゲット3の正面を一定速度で通過させ
るための回転体、5は回転体4を回転させるためのモー
タ、6、7はモータ5の回転を回転体4に伝えるための
ギア、8はターゲット3に電力を供給し、チャンバー1
内にプラズマ状態を発生させるための電源、9はモータ
5への回転指令値、10は電源8への出力電力指令値で
ある。
2. Description of the Related Art FIG. 3 shows a mechanism of a conventional sputtering apparatus. In FIG. 3, reference numeral 1 denotes a vacuum chamber for generating plasma to form a film; In order to form a film, targets 4 arranged at regular intervals in parallel with the disk surface, 4 is a rotating body for mounting the disk 2 and passing the front of the target 3 at a constant speed, 5 is rotating the rotating body 4 6 and 7 are gears for transmitting the rotation of the motor 5 to the rotating body 4, 8 is for supplying power to the target 3, and
A power supply for generating a plasma state therein, 9 is a rotation command value to the motor 5, and 10 is an output power command value to the power supply 8.

【0003】この様な構成からなるスパッタリング装置
の動作について述べる。一定の圧力に保たれた真空チャ
ンバー1内にて、成膜されるディスク2を装着した回転
体4を、ギア6、ギア7を介してモータ5を駆動させる
ことにより一定速度で回転させる。その後、出力電力指
令値10を電源8に与え、電源8を起動させ、ターゲッ
ト3に電力を供給し、ターゲット3正面付近にプラズマ
を発生させる。そのプラズマにより、ディスク2がター
ゲット3正面を通過する際に成膜される。
The operation of the sputtering apparatus having such a configuration will be described. A rotating body 4 on which a disk 2 on which a film is to be formed is mounted is rotated at a constant speed by driving a motor 5 via a gear 6 and a gear 7 in a vacuum chamber 1 maintained at a constant pressure. After that, the output power command value 10 is given to the power supply 8, the power supply 8 is activated, the power is supplied to the target 3, and plasma is generated near the front of the target 3. The plasma forms a film when the disk 2 passes in front of the target 3.

【0004】[0004]

【発明が解決しようとする課題】スパッタリング装置に
おいては、ターゲットの積算放電時間が長くなると、成
膜レートが低くなり、ディスクの膜厚が薄くなる傾向が
ある。このとき、スパッタ時間を長くすることで、ディ
スクの膜厚を所定の膜厚に調整できる場合がある。
In a sputtering apparatus, as the integrated discharge time of a target becomes longer, the film forming rate tends to be lower, and the disk thickness tends to be thinner. At this time, there is a case where the thickness of the disk can be adjusted to a predetermined thickness by lengthening the sputtering time.

【0005】例えば回転体に装着したディスクに、ター
ゲット正面を複数回通過するごとに成膜する構造を持つ
スパッタリング装置においては、図4に示す成膜する合
計の膜厚に対し、ターゲット上を1回通過する際に成膜
される膜厚の比率によって、膜厚の調整可能性が決定さ
れる。
[0005] For example, in a sputtering apparatus having a structure in which a film is formed on a disk mounted on a rotating body every time the target is passed a plurality of times in front of the target, the total film thickness to be formed as shown in FIG. The tunability of the film thickness is determined by the ratio of the film thickness formed when the film is passed twice.

【0006】すなわち、成膜する合計の膜厚に対し、タ
ーゲット上を1回通過する際に成膜される膜厚の比率
が、所望の膜厚均一性よりも小である場合には、ターゲ
ット上を通過する回数を多くしスパッタ時間を長くする
ことで、成膜レートが低くなり膜厚が薄くなった分を余
分に成膜し、所定の膜厚を得ることができる。
In other words, if the ratio of the film thickness formed in a single pass over the target to the total film thickness to be formed is smaller than the desired film thickness uniformity, By increasing the number of times of passing over and lengthening the sputtering time, the film formation rate is decreased and the film thickness is reduced, so that an extra film is formed and a predetermined film thickness can be obtained.

【0007】しかしながら、成膜する合計の膜厚に対
し、ターゲット上を1回通過する際に成膜される膜厚の
比率が、所望の膜厚均一性よりも大である場合には、タ
ーゲット上を通過する回数を多くしスパッタ時間を長く
しても膜厚を調整しきれない。それは、例えば成膜する
合計の膜厚に対し、ターゲット上を1回通過する際に成
膜される膜厚の比率が5%以上の場合、膜厚均一性も5
%以上となるので、膜厚均一性を2〜3%以内に留めな
ければならないような場合、正常範囲を超えてしまうと
いう課題があった。
However, if the ratio of the film thickness formed in a single pass over the target to the total film thickness to be formed is larger than the desired film thickness uniformity, Even if the number of times of passing over is increased and the sputtering time is extended, the film thickness cannot be adjusted. For example, when the ratio of the film thickness formed in one pass over the target to the total film thickness is 5% or more, the film thickness uniformity is also 5%.
% Or more, there is a problem that when the film thickness uniformity must be kept within 2 to 3%, it exceeds the normal range.

【0008】[0008]

【課題を解決するための手段】本発明は、上記従来の課
題を解決するもので、回転体に装着されたディスクを成
膜するに際し、ターゲットに電力を供給する電源の出力
電力値を取り込み、この出力電力値と出力している時間
から積算放電時間を求め、この積算放電時間を監視し、
あらかじめ測定しておいた前記ターゲットの積算放電時
間と成膜レートの低下量の関係をもとに、監視している
前記積算放電時間から前記成膜レートの低下し始めるタ
イミングを検出し、あらかじめ測定しておいた前記回転
体の回転速度と前記ディスクの膜厚の関係をもとに、前
記成膜レートの低下量を補うための前記回転体の回転速
度を演算し求め、前記回転体をこの回転速度に制御する
ことを特徴とする。
SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems. In forming a disk mounted on a rotating body, an output power value of a power supply for supplying power to a target is taken. The integrated discharge time is obtained from the output power value and the output time, and the integrated discharge time is monitored.
Based on the relationship between the accumulated discharge time of the target and the amount of decrease in the film formation rate measured in advance, the timing at which the film formation rate starts to decrease from the monitored accumulated discharge time is detected and measured in advance. Based on the relationship between the rotation speed of the rotating body and the film thickness of the disk, the rotation speed of the rotating body for compensating for the decrease in the film forming rate is calculated and obtained. The rotation speed is controlled.

【0009】[0009]

【発明の実施の形態】以下、本発明の実施の形態につい
て、図1を用いて説明する。
Embodiments of the present invention will be described below with reference to FIG.

【0010】図1において、11は電源8からの出力電
力のフィードバック値、12は回転体4自身の回転速度
を計測するための回転検出センサ、13は成膜時に積算
放電時間を常に監視し、成膜レートが低下し始める積算
放電時間に到達したときに、あらかじめ測定し記憶して
いる積算放電時間と成膜レートの低下量の関係から、そ
の低下量を補う分の回転体4の回転速度を演算し、モー
タ5へ新たな回転速度指令値を与える演算回路である。
In FIG. 1, reference numeral 11 denotes a feedback value of the output power from the power supply 8, reference numeral 12 denotes a rotation detection sensor for measuring the rotation speed of the rotator 4, reference numeral 13 constantly monitors the integrated discharge time during film formation, When the accumulated discharge time at which the film forming rate starts to decrease reaches, the rotational speed of the rotating body 4 for compensating for the decreased amount from the relationship between the accumulated discharge time measured and stored in advance and the decreased amount of the film forming rate. , And gives a new rotation speed command value to the motor 5.

【0011】まず、演算回路13に、あらかじめ測定し
ておいた積算放電時間と成膜レートの低下量を入力す
る。これは、例えば図2に示すような関係から求めるこ
とができる。また、あらかじめ測定しておいた、回転体
4の回転速度と膜厚の低下値を入力する。そして、新た
なターゲットを取り付けた時点で、演算回路13内部に
記憶されているターゲット3の積算放電時間をクリアす
る。
First, an integrated discharge time and a decrease in the film forming rate, which are measured in advance, are input to the arithmetic circuit 13. This can be obtained, for example, from the relationship shown in FIG. In addition, the rotational speed of the rotating body 4 and the decrease value of the film thickness, which are measured in advance, are input. Then, when a new target is attached, the accumulated discharge time of the target 3 stored in the arithmetic circuit 13 is cleared.

【0012】その後、装置にてディスク2への成膜を開
始すると同時に、その時の電源8からの出力電力のフィ
ードバック値11と、電源8へ起動信号を出力している
時間から積算放電時間を演算し求め、それを常時監視す
る。
Thereafter, at the same time when the film formation on the disk 2 is started by the apparatus, the integrated discharge time is calculated from the feedback value 11 of the output power from the power supply 8 at that time and the time during which the start signal is output to the power supply 8. And monitor it constantly.

【0013】次に、常時監視している積算放電時間と、
あらかじめ入力されている積算放電時間と成膜レートの
低下量の関係をもとに比較し、成膜レートの低下し始め
るタイミングを検出する。
Next, the integrated discharge time constantly monitored,
The timing at which the film formation rate starts to decrease is detected by comparing based on the relationship between the integrated discharge time and the amount of decrease in the film formation rate input in advance.

【0014】そして、成膜レートが低下し始める積算放
電時間に到達したときに、回転検出センサ12の入力を
もとに、回転体4自身の回転速度を演算し求め、その求
められた回転速度の値と、あらかじめ入力されている回
転体4の回転速度と膜厚の低下量をもとに、低下した成
膜レートでも所定の膜厚が得られる様な、回転体4の回
転速度の減速量を演算し求め、その減速量に相当するモ
ータ5の回転速度を演算し求め、その値をすでに設定し
ている回転速度指令値9より引いた値を、モータ5に対
する新たな回転速度指令値9とし与える。
When the accumulated discharge time at which the deposition rate starts to decrease has been reached, the rotation speed of the rotating body 4 itself is calculated based on the input of the rotation detection sensor 12, and the obtained rotation speed is calculated. , And the rotational speed of the rotating body 4 is reduced so that a predetermined film thickness can be obtained even at a reduced film forming rate based on the rotational speed of the rotating body 4 and the reduction amount of the film thickness which are input in advance. The rotation speed of the motor 5 corresponding to the deceleration amount is calculated and obtained, and a value obtained by subtracting the value from the rotation speed command value 9 which has already been set is obtained as a new rotation speed command value for the motor 5. 9 is given.

【0015】[0015]

【発明の効果】以上の様に本発明によれば、回転体に装
着したディスクが、ターゲット正面を複数回通過する際
に成膜される構造を持つ様なスパッタリング装置におい
て、成膜する合計の膜厚に対する、ターゲット上を1回
通過する際に成膜される膜厚の比率が大である場合で
も、成膜レートの低下が起こった際に、成膜レートの低
下量を補うための回転体の回転速度を演算し求め、その
値に相当するモータへの新たな回転速度指令値を求め、
その新たな回転速度指令値をモータに与えることで、成
膜レートの低下量を補い、良好な膜厚均一性を得ること
ができるという効果が得られる。
As described above, according to the present invention, in a sputtering apparatus having a structure in which a disk mounted on a rotating body is formed when a disk passes a plurality of times in front of a target, a total amount of film formation is obtained. Even when the ratio of the film thickness formed during one pass over the target to the film thickness is large, when the film formation rate is reduced, the rotation for compensating for the reduction amount of the film formation rate is performed. Calculate and calculate the rotational speed of the body, find a new rotational speed command value to the motor corresponding to that value,
By giving the new rotation speed command value to the motor, the effect of compensating for the decrease in the film formation rate and obtaining good film thickness uniformity can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第一の実施形態にかかるスパッタリン
グ装置の構成を示す図
FIG. 1 is a diagram showing a configuration of a sputtering apparatus according to a first embodiment of the present invention.

【図2】成膜レートと積算放電時間の関係を示す概略図FIG. 2 is a schematic diagram showing a relationship between a film forming rate and an integrated discharge time.

【図3】従来のスパッタリング装置の構成を示す図FIG. 3 is a diagram showing a configuration of a conventional sputtering apparatus.

【図4】ディスク上に成膜される膜の概略図FIG. 4 is a schematic view of a film formed on a disk.

【符号の説明】[Explanation of symbols]

2 ディスク 3 ターゲット 4 回転体 5 モータ 8 電源 9 モータの回転速度指令値 10 電源の出力電力指令値 13 演算回路 2 disk 3 target 4 rotating body 5 motor 8 power supply 9 motor rotation speed command value 10 power supply output power command value 13 arithmetic circuit

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 回転体に装着されたディスクを成膜する
に際し、ターゲットに電力を供給する電源の出力電力値
を取り込む工程と、この出力電力値と前記電源の出力時
間から積算放電時間を求め、この積算放電時間を監視す
る工程と、あらかじめ測定しておいた前記ターゲットの
積算放電時間と成膜レートの低下量の関係をもとに、監
視している前記積算放電時間から前記成膜レートの低下
し始めるタイミングを検出する工程と、あらかじめ測定
しておいた前記回転体の回転速度と前記ディスクの膜厚
の関係をもとに、前記成膜レートの低下量を補うための
前記回転体の回転速度を演算し求める工程と、前記回転
体をこの回転速度に制御する工程とからなるスパッタリ
ング方法。
1. A step of taking in an output power value of a power supply for supplying power to a target when depositing a disk mounted on a rotating body, and calculating an integrated discharge time from the output power value and the output time of the power supply. Monitoring the integrated discharge time and the film deposition rate from the monitored integrated discharge time based on the relationship between the integrated discharge time of the target and the amount of decrease in the film formation rate measured in advance. Detecting the timing at which the rotating body starts to decrease, and the rotating body for compensating for the amount of decrease in the film forming rate, based on the relationship between the rotating speed of the rotating body and the film thickness of the disk measured in advance. And a step of calculating the rotation speed of the rotating body and controlling the rotating body to the rotation speed.
【請求項2】 回転体に装着されたディスクを成膜する
に際し、ターゲットに電力を供給する電源の出力電力値
を取り込む手段と、この出力電力値と前記電源の出力時
間から積算放電時間を求め、この積算放電時間を監視す
る手段と、あらかじめ測定しておいた前記ターゲットの
積算放電時間と成膜レートの低下量の関係をもとに、監
視している前記積算放電時間から前記成膜レートの低下
し始めるタイミングを検出する手段と、あらかじめ測定
しておいた前記回転体の回転速度と前記ディスクの膜厚
の関係をもとに、前記成膜レートの低下量を補うための
前記回転体の回転速度を演算し求め、この値に相当する
前記回転体を駆動するモータへの新たな回転速度指令値
を求める手段と、この新たな回転速度指令値により前記
回転体の回転速度を制御する手段を有するスパッタリン
グ装置。
2. A means for capturing an output power value of a power supply for supplying power to a target when depositing a disk mounted on a rotating body, and obtaining an integrated discharge time from the output power value and the output time of the power supply. Means for monitoring the integrated discharge time, and the film deposition rate from the monitored integrated discharge time based on the relationship between the integrated discharge time of the target and the amount of decrease in the film formation rate measured in advance. Means for detecting the timing at which the rotation of the rotating body starts to decrease, and the rotating body for compensating for the amount of decrease in the film forming rate based on the relationship between the rotational speed of the rotating body and the film thickness of the disk measured in advance. Means for calculating the rotation speed of the rotating body, obtaining a new rotation speed command value for the motor for driving the rotating body corresponding to this value, and determining the rotation speed of the rotating body by the new rotation speed command value. A sputtering apparatus having a means for controlling.
JP2000125729A 2000-04-26 2000-04-26 Method and mechanism for sputtering Pending JP2001307390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000125729A JP2001307390A (en) 2000-04-26 2000-04-26 Method and mechanism for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000125729A JP2001307390A (en) 2000-04-26 2000-04-26 Method and mechanism for sputtering

Publications (1)

Publication Number Publication Date
JP2001307390A true JP2001307390A (en) 2001-11-02

Family

ID=18635629

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000125729A Pending JP2001307390A (en) 2000-04-26 2000-04-26 Method and mechanism for sputtering

Country Status (1)

Country Link
JP (1) JP2001307390A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509102A (en) * 2002-12-04 2006-03-16 ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Method for producing a multilayer film and apparatus for carrying out said method
JP2011193288A (en) * 2010-03-15 2011-09-29 Seiko Instruments Inc Pattern forming method, pattern forming apparatus, piezoelectric vibrator, method of manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled clock

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509102A (en) * 2002-12-04 2006-03-16 ライボルト オプティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Method for producing a multilayer film and apparatus for carrying out said method
JP2011193288A (en) * 2010-03-15 2011-09-29 Seiko Instruments Inc Pattern forming method, pattern forming apparatus, piezoelectric vibrator, method of manufacturing piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled clock

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