JP2001291905A - Optical semiconductor element - Google Patents
Optical semiconductor elementInfo
- Publication number
- JP2001291905A JP2001291905A JP2000109527A JP2000109527A JP2001291905A JP 2001291905 A JP2001291905 A JP 2001291905A JP 2000109527 A JP2000109527 A JP 2000109527A JP 2000109527 A JP2000109527 A JP 2000109527A JP 2001291905 A JP2001291905 A JP 2001291905A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- light
- light emitting
- reflecting surface
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 230000003287 optical effect Effects 0.000 title claims abstract description 49
- 230000001154 acute effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 15
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920006020 amorphous polyamide Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光半導体素子、特
に発生した光を放射する発光素子及び入射した光を受光
して電気に変換する受光素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device, and more particularly to a light emitting device that emits generated light and a light receiving device that receives incident light and converts it into electricity.
【０００２】[0002]
【従来の技術】従来の発光素子や受光素子などの光半導
体素子は、光の取り出し効率又は受光効率を向上させる
ために、例えば、特開平１０−３０８５３５号公報に示
されているように、側面を反射面としたすりばち状の凹
部をパッケージに形成してその凹部にダイ（光半導体チ
ップ）搭載するように構成していた。2. Description of the Related Art Conventional optical semiconductor elements such as a light emitting element and a light receiving element are designed to improve the light extraction efficiency or light receiving efficiency, for example, as disclosed in JP-A-10-308535. Has been formed in a package, and a die (optical semiconductor chip) is mounted in the recess.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、このす
りばち状の凹部を形成するには、パッケージ部材にエン
ドミル等によりザグリ加工をしたり、パッケージ成形時
に型に凹部に対応した凸部を形成して成形する等の加工
を必要とし、凹部のない平板状のパッケージを作製する
場合に比較して非常に手間がかかるという問題点があっ
た。このために、光の取り出し効率又は受光効率の高い
光半導体素子は、安価に製造することができないという
問題点があった。However, in order to form the horn-shaped concave portion, a counterbore process is performed on the package member by an end mill or the like, or a convex portion corresponding to the concave portion is formed in the mold at the time of molding the package. However, there is a problem that it takes much time and labor as compared with a case where a flat package having no concave portion is manufactured. For this reason, there has been a problem that an optical semiconductor element having high light extraction efficiency or high light reception efficiency cannot be manufactured at low cost.
【０００４】そこで、本発明は光の取り出し効率又は受
光効率が高く、かつ安価に製造することができる光半導
体素子を提供することを目的とする。Accordingly, an object of the present invention is to provide an optical semiconductor device which has high light extraction efficiency or light reception efficiency and can be manufactured at low cost.
【０００５】[0005]
【課題を解決するための手段】以上の目的を達成するた
めに、本発明に係る第１の光半導体素子は、光を放射又
は吸収する活性層を備えた光半導体チップが接合部材を
用いて基材上に接合されてなる光半導体素子において、
上記接合部材は上記光半導体チップの外側に該光半導体
チップの側面と鋭角をなす光反射面を有するように形成
されていることを特徴とする。このように構成された本
発明に係る第１の光半導体素子は、上記光反射面により
光を反射させて上方に出射又は活性層に入射させること
ができ、出射又は受光効率を向上させることができる。In order to achieve the above object, a first optical semiconductor device according to the present invention comprises an optical semiconductor chip having an active layer for emitting or absorbing light by using a bonding member. In an optical semiconductor element bonded on a base material,
The bonding member is formed so as to have a light reflecting surface that forms an acute angle with a side surface of the optical semiconductor chip outside the optical semiconductor chip. The first optical semiconductor element according to the present invention thus configured can reflect light by the light reflecting surface and emit the light upward or enter the active layer, thereby improving the emission or light receiving efficiency. it can.
【０００６】また、本発明に係る第２の光半導体素子
は、光を放射又は吸収する活性層と同一面側に形成され
たｐ側及びｎ側電極とを有する光半導体チップが、基材
に形成された正負の電極上又は１対のリードフレームか
らなる正負の電極上に導電性の接合部材を用いてフリッ
プチップボンディングされてなる光半導体素子であっ
て、上記接合部材は上記光半導体チップの外側に該光半
導体チップの側面と鋭角をなす光反射面を有するように
形成されていることを特徴とする。このように構成され
た本発明に係る第２の光半導体素子は、上記光反射面に
より光を反射させて上方に出射又は活性層に入射させる
ことができ、出射又は受光効率を向上させることができ
る。A second optical semiconductor device according to the present invention is characterized in that an optical semiconductor chip having an active layer for emitting or absorbing light and a p-side electrode and an n-side electrode formed on the same surface side is formed on a base material. An optical semiconductor element formed by flip-chip bonding using a conductive bonding member on the formed positive / negative electrode or on a positive / negative electrode formed of a pair of lead frames, wherein the bonding member is formed of the optical semiconductor chip. It is characterized in that it is formed so as to have a light reflecting surface which forms an acute angle with the side surface of the optical semiconductor chip on the outside. The second optical semiconductor device according to the present invention thus configured can reflect light by the light reflecting surface and emit the light upward or enter the active layer, thereby improving the emission or light receiving efficiency. it can.
【０００７】本発明に係る第１または第２の光半導体素
子において、より効果的に取り出し又は受光効率を高く
するために、上記光反射面は上記活性層より高い位置ま
で形成されていることが好ましい。In the first or second optical semiconductor device according to the present invention, the light reflecting surface may be formed to a position higher than the active layer in order to more effectively take out or increase the light receiving efficiency. preferable.
【０００８】また、本発明に係る第１または第２の光半
導体素子において、より効果的に取り出し又は受光効率
を高くするために、上記光反射面は上記光半導体チップ
の周囲を囲むように形成されていることが好ましい。In the first or second optical semiconductor device according to the present invention, the light reflecting surface is formed so as to surround the optical semiconductor chip in order to more effectively take out or increase the light receiving efficiency. It is preferred that
【０００９】また、本発明に係る第１または第２の光半
導体素子において、上記接合部材は、はんだ又は錫合金
からなることが好ましく、このようにすると、上記接合
部材を所定の形状に成形するだけで、表面をコーティン
グすることなく光反射面を形成できる。In the first or second optical semiconductor device according to the present invention, the joining member is preferably made of a solder or a tin alloy. In this case, the joining member is formed into a predetermined shape. By itself, the light reflecting surface can be formed without coating the surface.
【００１０】[0010]
【発明の実施の形態】以下、図面を参照しながら、本発
明に係る実施の形態について説明する。 実施の形態１．本発明に係る実施の形態１の光半導体素
子は、図１（ａ）に示すように、絶縁物構造体３１に正
の電極３２と負の電極３３とが形成されてなる基材３上
に、発光ダイオードチップ１が設けられて透光性樹脂４
でモールドされた発光素子である。本実施の形態１の発
光素子において、図１（ａ）（ｂ）に示すように、発光
ダイオードチップ１は同一面側にｐ側電極１１とｎ側電
極１２とが形成され、ｐ側電極１１とｎ側電極１２とが
それぞれ正の電極３２と負の電極３３に対向するように
導電性の接合部材２で接合されている。Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. The optical semiconductor device according to the first embodiment of the present invention, as shown in FIG. 1A, has a structure in which a positive electrode 32 and a negative electrode 33 are formed on an insulator structure 31 on a substrate 3. A light-emitting diode chip 1 is provided and a light-transmitting resin 4
It is a light emitting element molded with. In the light emitting device of the first embodiment, as shown in FIGS. 1A and 1B, a light emitting diode chip 1 has a p-side electrode 11 and an n-side electrode 12 formed on the same surface side, and a p-side electrode 11. And the n-side electrode 12 are joined by the conductive joining member 2 so as to face the positive electrode 32 and the negative electrode 33, respectively.
【００１１】ここで、特に本実施の形態１では、接合部
材２において、発光ダイオードチップ１の外側を実質的
に囲むように該発光ダイオードチップ１の側面と鋭角を
なす光反射面２１を形成したことを特徴とし、この光反
射面２１によって発光ダイオードチップ１の側面から漏
れ出した光を上方に反射して光の上方への取り出し効率
を向上させている。尚、図１（ａ）（ｂ）において、２
２の符号は接合部材２の稜線を示し、本実施の形態１で
はその稜線２２がいずれの場所においても、発光ダイオ
ードチップ１の発光層より高い位置に形成されるように
接合部材２を構成している。また、接合部材２の反射面
は、図１（ｂ）に示すように発光ダイオードチップ１の
周囲を囲むように形成することが好ましく、これにより
効果的に光の取り出し効率を向上させることができる。Here, in the first embodiment, in particular, the light reflecting surface 21 which forms an acute angle with the side surface of the light emitting diode chip 1 is formed in the bonding member 2 so as to substantially surround the outside of the light emitting diode chip 1. The light reflecting surface 21 reflects light leaking from the side surface of the light emitting diode chip 1 upward to improve the efficiency of extracting light upward. 1 (a) and 1 (b), 2
Reference numeral 2 indicates a ridge line of the joining member 2. In the first embodiment, the joining member 2 is configured such that the ridge line 22 is formed at a position higher than the light emitting layer of the light emitting diode chip 1 at any position. ing. Further, it is preferable that the reflection surface of the joining member 2 is formed so as to surround the periphery of the light emitting diode chip 1 as shown in FIG. 1B, whereby the light extraction efficiency can be effectively improved. .
【００１２】詳細に説明すると、本実施の形態１におい
て発光ダイオードチップ１は、図４に示すように、例え
ばサファイアからなる透光性基板１６上にｎ型窒化ガリ
ウム系半導体層１５、例えばアンドープの窒化ガリウム
系半導体からなる発光層（活性層）１４、ｐ型窒化ガリ
ウム系半導体層１３が順に積層され、そのｐ型窒化ガリ
ウム系半導体層１３の上にｐ側電極１１が形成され、ｐ
型窒化ガリウム系半導体層１３及び発光層１４の一部が
除去されて露出されたｎ型窒化ガリウム系半導体層１５
上にｎ側電極１２が形成されてなる。More specifically, in the first embodiment, as shown in FIG. 4, the light emitting diode chip 1 has an n-type gallium nitride based semiconductor layer 15, for example, an undoped semiconductor layer 15 on a light transmitting substrate 16 made of, for example, sapphire. A light-emitting layer (active layer) 14 made of a gallium nitride-based semiconductor and a p-type gallium nitride-based semiconductor layer 13 are sequentially stacked, and a p-side electrode 11 is formed on the p-type gallium nitride-based semiconductor layer 13.
N-type gallium nitride-based semiconductor layer 15 exposed by removing part of n-type gallium nitride-based semiconductor layer 13 and light emitting layer 14
An n-side electrode 12 is formed thereon.
【００１３】そして、発光ダイオードチップ１は、その
ｎ側電極１２が負の電極３３に接合部材２で接合され、
ｐ側電極１１が正の電極３２に接合部材２で接合されて
基材３上に固定され、さらに凸レンズ形状に成形された
透光性樹脂４によって封止されている。The light emitting diode chip 1 has its n-side electrode 12 joined to the negative electrode 33 by the joining member 2,
The p-side electrode 11 is joined to the positive electrode 32 by the joining member 2 and fixed on the base material 3, and is further sealed by the translucent resin 4 molded into a convex lens shape.
【００１４】次に、本実施の形態１の所定の形状を有す
る接合部材２の形成方法について説明する。本接合部材
の形成方法ではまず、図２に示すように、基材３の正負
の電極３２，３３上に接合部材２を所定量塗布し、所望
の接合部材２の形状に対応した形状のヒートツール３４
を用いて押圧加熱して、そのヒートツール３４の外形に
沿った形状に接合材２を成形する。その後、図３に示す
ように、発光ダイオードチップ１を吸着したヒートツー
ル３５を用いて、所望の形状に成形した接合部材２の所
定の位置に発光ダイオードチップ１を載置した押圧加熱
し、発光ダイオードチップ１のｐ側電極１１、ｎ側電極
１２と正負の電極３２，３３の間に位置する接合材のみ
を溶融させて接合する。このようにすると、発光ダイオ
ードチップ１の外側に位置する光反射面２１の形状を所
望の形状に保ったまま、発光ダイオードチップ１のｎ側
電極とｐ側電極を正負の電極３２，３３と接合すること
ができる。Next, a method of forming the bonding member 2 having a predetermined shape according to the first embodiment will be described. In this method of forming the joining member, first, as shown in FIG. 2, the joining member 2 is applied on the positive and negative electrodes 32 and 33 of the base material 3 in a predetermined amount, and the heat is applied to a shape corresponding to the desired shape of the joining member 2. Tool 34
To form the joining material 2 in a shape along the outer shape of the heat tool 34. Thereafter, as shown in FIG. 3, the light emitting diode chip 1 is attached to a predetermined position of the joining member 2 formed in a desired shape by using a heat tool 35 to which the light emitting diode chip 1 is sucked, and the light emitting diode chip 1 is pressed and heated to emit light. Only the bonding material located between the p-side electrode 11 and the n-side electrode 12 of the diode chip 1 and the positive and negative electrodes 32 and 33 is melted and bonded. In this way, the n-side electrode and the p-side electrode of the light-emitting diode chip 1 are joined to the positive and negative electrodes 32 and 33 while the shape of the light reflecting surface 21 located outside the light-emitting diode chip 1 is maintained in a desired shape. can do.
【００１５】以上のように構成された実施の形態１の発
光素子は、接合部材２を発光ダイオードチップ１のｐ側
電極１１及びｎ側電極１２と基材３の電極３２，３３と
を接合するとともに、その光反射面２１により発光ダイ
オードチップ１の側面から漏れ出した光を上方に反射さ
せるように形成しているので、発光ダイオードチップ１
により発光した光の上方への取り出し効率を高くするこ
とができる。また、実施の形態１の発光素子では、基材
３に反射面を形成するための凹部を形成する必要がない
ので、凹部を有するパッケージを作製する場合に比較し
て基材３を安価に製造することができ、発光素子を安価
にできる。すなわち、本実施の形態１の発光素子によれ
ば、光の取り出し効率の高い発光素子を安価に製造する
ことができる。In the light emitting device of the first embodiment configured as described above, the joining member 2 joins the p-side electrode 11 and the n-side electrode 12 of the light-emitting diode chip 1 with the electrodes 32 and 33 of the base material 3. In addition, the light reflecting surface 21 is formed so as to reflect the light leaked from the side surface of the light emitting diode chip 1 upward.
Thus, the efficiency of taking out the emitted light upward can be increased. Further, in the light emitting device of the first embodiment, since it is not necessary to form a concave portion for forming a reflection surface on the base material 3, the base material 3 can be manufactured at a lower cost as compared with a case where a package having a concave portion is manufactured. And the cost of the light emitting element can be reduced. That is, according to the light emitting element of Embodiment 1, a light emitting element with high light extraction efficiency can be manufactured at low cost.
【００１６】本実施の形態１において、接合部材２とし
てははんだ、錫、又は錫合金等の表面が金属光沢を有す
る軟ロウを用いることが好ましく、このように金属光沢
を有する軟ロウを用いると、接合部表面をなんらコーテ
ィング処理を施すことなく、比較的大きな反射率が得ら
れる。また、本発明では、光に対して比較的高い反射率
を有する金属粒子を含む導電性接着材を接合部材２とし
て用いることもできる。さらに、本発明では、比較的光
に対する反射率が低い導電性の材料を用い、所望の形状
に成形した後、反射コーティングをするようにしても良
い。尚、本発明において光反射面２１は、発光ダイオー
ドチップ１が発光する光に対する光反射率が５０％以上
となるようにすることが好ましい。In the first embodiment, as the joining member 2, it is preferable to use a soft solder having a metallic luster on the surface such as solder, tin, or a tin alloy. In addition, a relatively large reflectance can be obtained without performing any coating treatment on the surface of the joint. Further, in the present invention, a conductive adhesive containing metal particles having a relatively high reflectance to light can be used as the bonding member 2. Further, in the present invention, a reflective material may be formed after forming a desired shape using a conductive material having a relatively low reflectance to light. In the present invention, it is preferable that the light reflecting surface 21 has a light reflectance of 50% or more with respect to light emitted by the light emitting diode chip 1.
【００１７】本実施の形態１において、絶縁物構造体３
１としてガラスエポキシ積層基板、液晶ポリマー、ＰＢ
Ｔ樹脂、セラミックス等を用いることができる。また、
電極３２，３３として、銅、りん青銅、鉄、ニッケル等
が固着された電極又は電極膜等を使用することができ
る。さらに、透光性樹脂４としては、例えば、シリコー
ン、エポキシ、不飽和ポリエステル、ポリイミド、非晶
質ポリアミド等の樹脂を用いることができる。In the first embodiment, the insulator structure 3
1. Glass epoxy laminated substrate, liquid crystal polymer, PB
T resin, ceramics, or the like can be used. Also,
As the electrodes 32 and 33, an electrode or an electrode film to which copper, phosphor bronze, iron, nickel, or the like is fixed can be used. Further, as the translucent resin 4, for example, a resin such as silicone, epoxy, unsaturated polyester, polyimide, and amorphous polyamide can be used.
【００１８】実施の形態２．本発明に係る実施の形態２
の光半導体素子は、１対の正負の電極リード３２ａ，３
３ｂ上に、発光ダイオードチップ１が設けられて透光性
樹脂４ａでモールドされて構成された発光素子である。
すなわち、実施の形態２の発光素子は、図５に示すよう
に、発光ダイオードチップ１のｐ側電極１１及びｎ側電
極１２をそれぞれ正負の電極リード３２ａ，３３ｂに接
合部材２ａを介して接合して、透光性樹脂４ａによりモ
ールドしたいわゆるリードタイプの発光ダイオード（発
光素子）である。本実施の形態２の発光素子も、実施の
形態１と同様に、発光ダイオードチップ１の外側に該発
光ダイオードチップ１の側面と鋭角をなす光反射面２１
ａが形成されるように構成し、この光反射面２１ａによ
って発光ダイオードチップ１の側面から漏れ出した光を
上方に反射して光の上方への取り出し効率を向上させた
ものである。尚、接合部材２ａの光反射面２１ａは、実
施の形態１と同様に形成することができる。Embodiment 2 FIG. Embodiment 2 according to the present invention
Of the optical semiconductor element is a pair of positive and negative electrode leads 32a, 3
The light emitting element is formed by providing a light emitting diode chip 1 on 3b and molding it with a translucent resin 4a.
That is, as shown in FIG. 5, in the light emitting device of the second embodiment, the p-side electrode 11 and the n-side electrode 12 of the light-emitting diode chip 1 are bonded to the positive and negative electrode leads 32a and 33b via the bonding member 2a. This is a so-called lead type light emitting diode (light emitting element) molded with the translucent resin 4a. As in the first embodiment, the light emitting element of the second embodiment also has a light reflecting surface 21 formed at an acute angle with the side surface of the light emitting diode chip 1 outside the light emitting diode chip 1.
The light reflecting surface 21a reflects light leaking from the side surface of the light emitting diode chip 1 upward to improve the efficiency of extracting light upward. The light reflecting surface 21a of the joining member 2a can be formed in the same manner as in the first embodiment.
【００１９】以上のように構成された実施の形態２の発
光素子は、接合部材２ａを発光ダイオードチップ１のｐ
側電極１１及びｎ側電極１２と電極リード３２ａ，３３
ｂとを接合するとともに、その光反射面２１ａにより漏
れ出した光を上方に反射させるように形成しているの
で、発光ダイオードチップ１で発光した光の上方への取
り出し効率を高くすることができる。従って、実施の形
態２の発光素子では、光を上方に反射させるためのカッ
プ等を別に設ける必要がないので、電極リードの上にカ
ップが形成された発光素子を作製する場合に比較して安
価に製造することができる。すなわち、本実施の形態２
の発光素子によれば、光の取り出し効率の高い発光素子
を安価に製造することができる。In the light emitting device of the second embodiment configured as described above, the bonding member 2a is connected to the p of the light emitting diode chip 1.
Side electrode 11, n-side electrode 12, and electrode leads 32a, 33
b, and is formed so as to reflect the light leaked out by the light reflecting surface 21a upward, so that the efficiency of taking out the light emitted by the light emitting diode chip 1 upward can be increased. . Therefore, in the light-emitting element of Embodiment 2, there is no need to separately provide a cup or the like for reflecting light upward, so that the light-emitting element is inexpensive as compared with the case of manufacturing a light-emitting element in which a cup is formed on an electrode lead. Can be manufactured. That is, the second embodiment
According to the light emitting device of (1), a light emitting device with high light extraction efficiency can be manufactured at low cost.
【００２０】尚、実施の形態２において、電極リードと
して、銅、りん青銅、鉄、ニッケル等を用いて構成する
ことができる。また、接合部材２ａ、透光性樹脂４ａ等
は実施の形態１と同様の材料を用いて構成することがで
きる。In the second embodiment, the electrode leads can be formed using copper, phosphor bronze, iron, nickel or the like. Further, the joining member 2a, the translucent resin 4a, and the like can be formed using the same material as in the first embodiment.
【００２１】変形例．実施の形態１において、所望の形
状の接合部材の形成方法の一例を示したが、本発明はこ
れに限られるものではなく、以下のような種々の方法を
用いることができる。簡易的には、例えば、はんだや錫
等を用いる場合、接合部材を予め成形することなく、所
定量の接合部材を溶融させた状態で、図３に示すよう
に、発光ダイオードチップ１を吸着したヒートツール３
５を用いて、溶融させた接合部材２の所定の位置に発光
ダイオードチップ１を載置して接合部材がチップ１の側
面の外側にはみ出すように押圧し、その状態を保持した
まま、冷却して接合する。このようにすると、発光ダイ
オードチップの側面は軟ロウに対して濡れ性を有してい
ないためにはじかれて側面の外側に傾斜した表面である
光反射面２１が形成される。Modified example. In the first embodiment, an example of a method for forming a bonding member having a desired shape is described. However, the present invention is not limited to this, and various methods described below can be used. For simplicity, for example, when solder or tin or the like is used, the light emitting diode chip 1 is sucked as shown in FIG. 3 in a state where a predetermined amount of the bonding member is melted without forming the bonding member in advance. Heat tool 3
5, the light emitting diode chip 1 is placed at a predetermined position of the melted joining member 2 and pressed so that the joining member protrudes outside the side surface of the chip 1, and cooling is performed while maintaining the state. To join. In this manner, the side surface of the light emitting diode chip is repelled because it does not have wettability with respect to the soft solder, and the light reflecting surface 21 which is a surface inclined outwardly of the side surface is formed.
【００２２】またさらに、基材３上で成形することな
く、所望の形状に成形されたプリフォームを用いるよう
にしてもよい。以上のようにしても、実施の形態１と同
様に所望の光反射面２１を有する接合部材を構成するこ
とができる。Furthermore, a preform formed into a desired shape may be used without being formed on the substrate 3. Even in the manner described above, a joining member having a desired light reflecting surface 21 can be formed in the same manner as in the first embodiment.
【００２３】また、接合部材として、銀又は金等の金属
粒子を樹脂に含んで成る導電性接着材を用いる場合、基
材側に導電性接着剤を塗布した後、硬化させる前に所望
の形状に成形して、その後発光ダイオードチップ１を実
装して硬化させるようにしても良い。この場合、樹脂が
半硬化状態、すなわちＢステージ状態のときに所望の形
状に成形することが好ましい。以上のように本発明で
は、選択される接合部材の材料に応じて種々の方法によ
り、光反射面を形成することができる。When a conductive adhesive containing a metal particle such as silver or gold in a resin is used as a joining member, the conductive adhesive is applied to the base material side and then formed into a desired shape before curing. Then, the light emitting diode chip 1 may be mounted and cured. In this case, it is preferable to mold the resin into a desired shape when it is in a semi-cured state, that is, a B-stage state. As described above, in the present invention, the light reflecting surface can be formed by various methods according to the selected material of the joining member.
【００２４】また、本発明に係る実施の形態１及び２で
は、光半導体チップとして発光ダイオードチップを用い
た発光素子について説明したが、本発明はこれに限ら
ず、フォトダイオード等の光電変換素子チップを光半導
体チップとして用いた受光素子に適用することもでき
る。この場合、実施の形態１及び２で説明した方法を用
いて受光層である活性層を実質的に取り囲むように接合
部材に光反射面を形成するようにすれば良い。このよう
に構成された受光素子は、受光効率を高くでき、かつ安
価に製造できる。In the first and second embodiments of the present invention, a light emitting element using a light emitting diode chip as an optical semiconductor chip has been described. However, the present invention is not limited to this, and a photoelectric conversion element chip such as a photodiode may be used. Can also be applied to a light receiving element used as an optical semiconductor chip. In this case, the light reflecting surface may be formed on the bonding member so as to substantially surround the active layer serving as the light receiving layer by using the method described in Embodiment Modes 1 and 2. The light receiving element thus configured can have high light receiving efficiency and can be manufactured at low cost.
【００２５】[0025]
【発明の効果】以上詳細に説明したように、本発明に係
る第１又は第２の光半導体素子は、上記接合部材を上記
光半導体チップの外側に該光半導体チップの側面と鋭角
をなす光反射面を有するように形成しているので、その
光反射面により光を反射させて上方に出射又は活性層に
入射させることができ、出射又は受光効率を向上させる
ことができる。また、本発明に係る光半導体素子は、上
記接合部材で光反射面を形成しているので、別体で光反
射面を形成する必要がなく、安価に製造することができ
る。As described above in detail, in the first or second optical semiconductor device according to the present invention, the bonding member is formed such that the light that forms an acute angle with the side surface of the optical semiconductor chip is formed outside the optical semiconductor chip. Since it is formed to have a reflecting surface, light can be reflected by the light reflecting surface and emitted upward or made incident on the active layer, so that emission or light receiving efficiency can be improved. Further, since the optical semiconductor element according to the present invention forms the light reflecting surface with the bonding member, it is not necessary to separately form the light reflecting surface, and it can be manufactured at low cost.
【図１】 本発明に係る実施の形態１の発光素子の構成
を示す断面図（ａ）と平面図（ｂ）である。FIGS. 1A and 1B are a cross-sectional view and a plan view showing a configuration of a light emitting device according to a first embodiment of the present invention. FIGS.
【図２】 本発明に係る実施の形態１の発光素子におけ
る接合部材２の成形方法を示す断面図である。FIG. 2 is a cross-sectional view illustrating a method for forming the bonding member 2 in the light emitting device according to the first embodiment of the present invention.
【図３】 本発明に係る実施の形態１の発光素子におけ
る発光ダイオードチップの接合工程を示す断面図であ
る。FIG. 3 is a cross-sectional view illustrating a bonding step of a light emitting diode chip in the light emitting device according to the first embodiment of the present invention.
【図４】 本発明に係る実施の形態１の発光素子におい
て、発光ダイオードチップの部分を拡大して示す断面図
である。FIG. 4 is an enlarged cross-sectional view showing a light emitting diode chip in the light emitting device according to the first embodiment of the present invention.
【図５】 本発明に係る実施の形態２の発光素子の構成
を示す断面図である。FIG. 5 is a cross-sectional view illustrating a configuration of a light emitting device according to a second embodiment of the present invention.
１…発光ダイオードチップ、２…接合部材、３…基材、
４，４ａ…透光性樹脂、１１…ｐ側電極、１２…ｎ側電
極、１３…ｐ型窒化ガリウム系半導体層、１４…発光層
（活性層）、１５…ｎ型窒化ガリウム系半導体層、１６
…透光性基板、２１，２１ａ…光反射面、３１…絶縁物
構造体、３２…正の電極、３２ａ，３３ｂ…電極リー
ド、３３…負の電極。DESCRIPTION OF SYMBOLS 1 ... Light-emitting diode chip, 2 ... Joining member, 3 ... Base material,
4, 4a: translucent resin, 11: p-side electrode, 12: n-side electrode, 13: p-type gallium nitride based semiconductor layer, 14: light emitting layer (active layer), 15: n-type gallium nitride based semiconductor layer, 16
... Translucent substrate, 21, 21a ... Light reflecting surface, 31 ... Insulator structure, 32 ... Positive electrode, 32a, 33b ... Electrode lead, 33 ... Negative electrode.
Claims (5)
半導体チップが接合部材を用いて基材上に接合されてな
る光半導体素子において、 上記接合部材は上記光半導体チップの外側に該光半導体
チップの側面と鋭角をなす光反射面を有するように形成
されていることを特徴とする光半導体素子。1. An optical semiconductor device comprising an optical semiconductor chip provided with an active layer that emits or absorbs light and bonded to a substrate using a bonding member, wherein the bonding member is provided outside the optical semiconductor chip. An optical semiconductor device characterized by having a light reflecting surface that forms an acute angle with a side surface of an optical semiconductor chip.
に形成されたｐ側及びｎ側電極とを有する光半導体チッ
プが、基材に形成された正負の電極上又は１対のリード
フレームからなる正負の電極上に導電性の接合部材を用
いてフリップチップボンディングされてなる光半導体素
子であって、 上記接合部材は上記光半導体チップの外側に該光半導体
チップの側面と鋭角をなす光反射面を有するように形成
されていることを特徴とする光半導体素子。2. An optical semiconductor chip having an active layer that emits or absorbs light and p-side and n-side electrodes formed on the same surface side is formed on a positive electrode or a negative electrode formed on a base material or a pair of leads. An optical semiconductor device formed by flip-chip bonding using a conductive bonding member on positive and negative electrodes formed of a frame, wherein the bonding member forms an acute angle with a side surface of the optical semiconductor chip outside the optical semiconductor chip. An optical semiconductor device having a light reflecting surface.
まで形成されている請求項１又は２記載の光半導体素
子。3. The optical semiconductor device according to claim 1, wherein said light reflecting surface is formed up to a position higher than said active layer.
囲を囲むように形成されている請求項１〜３のうちのい
ずれか１つに記載の光半導体素子。4. The optical semiconductor device according to claim 1, wherein said light reflecting surface is formed so as to surround a periphery of said optical semiconductor chip.
なる請求項１〜４のうちのいずれか１つに記載の光半導
体素子。5. The optical semiconductor device according to claim 1, wherein the joining member is made of a solder or a tin alloy.
Priority Applications (1)
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|---|---|---|---|
| JP2000109527A JP4677653B2 (en) | 2000-04-11 | 2000-04-11 | Optical semiconductor device |
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|---|---|---|---|
| JP2000109527A JP4677653B2 (en) | 2000-04-11 | 2000-04-11 | Optical semiconductor device |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010269492A Division JP5234093B2 (en) | 2010-12-02 | 2010-12-02 | Method for manufacturing optical semiconductor element |
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| JP2001291905A true JP2001291905A (en) | 2001-10-19 |
| JP4677653B2 JP4677653B2 (en) | 2011-04-27 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008294399A (en) * | 2007-05-23 | 2008-12-04 | Augux Co Ltd | Fixing method of light emitting diode by tin solder |
| JP2016115881A (en) * | 2014-12-17 | 2016-06-23 | 京セラ株式会社 | Substrate for mounting a light-emitting element and light-emitting device |
| CN108305932A (en) * | 2018-03-08 | 2018-07-20 | 北京大学东莞光电研究院 | A kind of specular removal white light LAMP-LED structures and packaging method |
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| JPS63136365U (en) * | 1987-02-27 | 1988-09-07 | ||
| JPH07263754A (en) * | 1994-03-24 | 1995-10-13 | Nichia Chem Ind Ltd | Led element and manufacture of it |
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| JPH1187782A (en) * | 1997-09-03 | 1999-03-30 | Oki Electric Ind Co Ltd | Light emitting diode |
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| JPS58193650U (en) * | 1982-06-17 | 1983-12-23 | 三洋電機株式会社 | light emitting diode display device |
| JPS63136365U (en) * | 1987-02-27 | 1988-09-07 | ||
| JPH07263754A (en) * | 1994-03-24 | 1995-10-13 | Nichia Chem Ind Ltd | Led element and manufacture of it |
| JPH1126816A (en) * | 1997-07-02 | 1999-01-29 | Citizen Electron Co Ltd | Inferred data communication module |
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|---|---|---|---|---|
| JP2008294399A (en) * | 2007-05-23 | 2008-12-04 | Augux Co Ltd | Fixing method of light emitting diode by tin solder |
| JP2016115881A (en) * | 2014-12-17 | 2016-06-23 | 京セラ株式会社 | Substrate for mounting a light-emitting element and light-emitting device |
| CN108305932A (en) * | 2018-03-08 | 2018-07-20 | 北京大学东莞光电研究院 | A kind of specular removal white light LAMP-LED structures and packaging method |
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| Publication number | Publication date |
|---|---|
| JP4677653B2 (en) | 2011-04-27 |
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