JP2001291896A5 - - Google Patents

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Publication number
JP2001291896A5
JP2001291896A5 JP2000103216A JP2000103216A JP2001291896A5 JP 2001291896 A5 JP2001291896 A5 JP 2001291896A5 JP 2000103216 A JP2000103216 A JP 2000103216A JP 2000103216 A JP2000103216 A JP 2000103216A JP 2001291896 A5 JP2001291896 A5 JP 2001291896A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000103216A
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Japanese (ja)
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JP2001291896A (ja
JP3981797B2 (ja
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Priority to JP2000103216A priority Critical patent/JP3981797B2/ja
Priority claimed from JP2000103216A external-priority patent/JP3981797B2/ja
Publication of JP2001291896A publication Critical patent/JP2001291896A/ja
Publication of JP2001291896A5 publication Critical patent/JP2001291896A5/ja
Application granted granted Critical
Publication of JP3981797B2 publication Critical patent/JP3981797B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000103216A 2000-04-05 2000-04-05 半導体発光素子 Expired - Fee Related JP3981797B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000103216A JP3981797B2 (ja) 2000-04-05 2000-04-05 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000103216A JP3981797B2 (ja) 2000-04-05 2000-04-05 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2001291896A JP2001291896A (ja) 2001-10-19
JP2001291896A5 true JP2001291896A5 (cg-RX-API-DMAC7.html) 2006-06-15
JP3981797B2 JP3981797B2 (ja) 2007-09-26

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ID=18616969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000103216A Expired - Fee Related JP3981797B2 (ja) 2000-04-05 2000-04-05 半導体発光素子

Country Status (1)

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JP (1) JP3981797B2 (cg-RX-API-DMAC7.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003058726A1 (ja) * 2001-12-28 2005-05-19 サンケン電気株式会社 半導体発光素子、発光表示体、半導体発光素子の製造方法及び発光表示体の製造方法
TWI230473B (en) 2003-03-10 2005-04-01 Sanken Electric Co Ltd Semiconductor light emitting device and manufacturing method thereof
JP5171016B2 (ja) 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
CN102903809B (zh) * 2011-07-25 2016-05-11 晶元光电股份有限公司 发光二极管元件
JP6112986B2 (ja) * 2013-06-19 2017-04-12 キヤノン株式会社 半導体ｄｂｒおよび、半導体発光素子、固体レーザ、光音響装置、画像形成装置、および半導体ｄｂｒの製造方法
KR101701041B1 (ko) * 2015-05-27 2017-02-01 한양대학교 산학협력단 실리콘 다면체 상에 형성된 발광다이오드 및 이의 제조방법
JP7293631B2 (ja) * 2018-03-01 2023-06-20 株式会社リコー 反射鏡、面発光レーザ、反射鏡の製造方法及び面発光レーザの製造方法
JP7669774B2 (ja) * 2020-04-22 2025-04-30 株式会社リコー 反射鏡、面発光レーザ、光源、投影装置、表示装置及び投光装置
CN117393671B (zh) * 2023-12-08 2024-03-08 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

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