JP2001291803A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the quality of a semiconductor device by preventing damage to a filling material and the chip surface SOLUTION: This semiconductor device has a so-called chip-on-chip structure and constructed by stacking and bonding a child chip 2 on an active surface 11 of a parent chip 1 with its face down. A non-filler filling material 7, which does not contain particles unlike a filler, is filled between the active surface 11 of the parent chip 1 and the child chip 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a structure in which a semiconductor chip is joined face-down to a surface of a solid-state device such as another semiconductor chip or a wiring board.

[0002]

2. Description of the Related Art Conventionally, there has been known a semiconductor device having a chip-on-chip structure in which another semiconductor chip is superimposed on and joined to the surface of a semiconductor chip. In a semiconductor device having such a chip-on-chip structure, as shown in FIG. 2, one semiconductor chip 91 is joined to the other semiconductor chip 92 by a so-called face-down method. By a plurality of bumps 93 provided therebetween, they are connected so as to keep a predetermined interval, and
They are electrically connected to each other. A filler 96 formed by mixing a filler 95 into a synthetic resin 94 such as an epoxy resin is provided between the opposing surfaces of the semiconductor chips 91 and 92.
The semiconductor module obtained by sealing the space between the semiconductor chips 91 and 92 with the filler 96 is further sealed with a mold resin and accommodated in a package (not shown).

[0003]

However, the filler 96
The filler 95 in the inside has a hygroscopic property, and when the filler 95 absorbs moisture, the synthetic resin 94 and the filler 95
When the stress due to thermal expansion or the like is generated in the semiconductor device, the filler 96 may be damaged because the bonding force between the filler 96 and the semiconductor material is weakened. Further, the surface protection film formed on the outermost surfaces of the semiconductor chips 91 and 92 is damaged by the filler 95 in the filler 96, so that the semiconductor chips 9 and 92 are damaged.
However, there was a possibility that the performance of 1,92 would be deteriorated.

An object of the present invention is to provide a semiconductor device having improved quality by preventing damage to a filler and damage to a chip surface.

[0005]

According to the first aspect of the present invention, a semiconductor chip is bonded to a surface of a solid-state device in a face-down state in which an active surface thereof is opposed to the semiconductor chip. A semiconductor device having a structure described above, wherein a space between the surface of the solid-state device and the active surface of the semiconductor chip is sealed with a non-filler filler.

[0006] The solid state device may be a semiconductor chip different from the semiconductor chip, or may be a wiring board. According to the present invention, the space between the active surface of the semiconductor chip and the surface of the solid-state device is sealed with the non-filler filler. The non-filler filler is a filler containing no filler. Therefore, even if stress due to thermal expansion or the like is generated, there is no possibility that the non-filler filler may be damaged such as a crack, and there is no possibility that the active surface of the semiconductor chip is deteriorated and performance is deteriorated.
Good quality of the semiconductor device can be maintained.

[0007]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is an illustrative sectional view showing the configuration of a semiconductor device according to one embodiment of the present invention. This semiconductor device has a chip-on-chip structure in which a child chip 2 is bonded to an active surface 11 of a parent chip 1 in a face-down state with its active surface 21 opposed. After joining them, they are housed in a package 3. The active surface refers to a surface on the active surface layer region side on which a device such as a transistor is formed on a semiconductor substrate. Each of the parent chip 1 and the child chip 2 may be a silicon chip, but may be another type of semiconductor chip such as a compound semiconductor (such as gallium arsenide or gallium phosphide) or a germanium semiconductor. It is not necessary that the types of semiconductors of the semiconductor chip 1 and the child chip 2 match.

The parent chip 1 is formed to have a larger outer shape in plan view than the child chip 2. A bonding area of the child chip 2 is set in an area inside the active surface 11 of the parent chip 1, and a plurality of external connection pads (not shown) are formed on the outermost area around the bonding area. It is arranged so as to be exposed from the surface protective film thus formed. The external connection pad is
It is connected to a lead frame 5 via a bonding wire 4. The child chip 2 is the active surface 11 of the parent chip 1
Are connected face-down, and are connected at predetermined intervals by a plurality of bumps 6 provided between the active surfaces 11 and 21 facing each other, and are electrically connected to each other. Then, between the active surface 11 of the parent chip 1 and the active surface 21 of the child chip 2, for example,
The main material is a synthetic resin such as an epoxy resin, and is sealed by a non-filler filler 7 which does not contain a granular material such as a filler.

Therefore, unlike a semiconductor device in which a space between a parent chip and a child chip is sealed with a filler mixed with a filler, even if stress is generated in the semiconductor device due to thermal expansion or the like, a crack is generated in the non-filler filler 7. There is no risk of damage such as damage. Further, there is no possibility that the active surface 11 of the parent chip 1 and the active surface 21 of the child chip 2 are damaged, and there is no possibility that the performance of the parent chip 1 and the child chip 2 is deteriorated. Therefore, good quality of the semiconductor device can be maintained.

Although the embodiment of the present invention has been described above, the present invention can be embodied in other forms. For example, in the above-described embodiment, the chip-on-chip structure has been described, but the present invention is also applied to a flip-chip bonding structure in which the surface of a semiconductor chip is bonded to a wiring board such as a lead frame so as to face the same. be able to. In addition, various design changes can be made within the scope of the matters described in the claims.

[Brief description of the drawings]

FIG. 1 is an illustrative sectional view showing a configuration of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is an illustrative sectional view showing a configuration of a conventional semiconductor device having a chip-on-chip structure.

[Explanation of symbols]

 Reference Signs List 1 parent chip (solid device) 11 active surface (surface of solid device) 2 child chip (semiconductor chip) 21 active surface (active surface of semiconductor chip) 3 package 4 bonding wire 5 lead frame 6 bump 7 non-filler filler

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 25/18

Claims (1)

[Claims] 1. A semiconductor device having a structure in which a semiconductor chip is joined to a surface of a solid-state device in a face-down state with its active surface facing the semiconductor device, wherein the solid-state device and the active surface of the semiconductor chip are connected to each other. A semiconductor device, wherein the space is sealed with a non-filler filler.