JP2001291761A - Semiconductor manufacturing apparatus, and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor manufacturing apparatus whereby the uniformity of the processings of semiconductor wafers can be improved. SOLUTION: The semiconductor manufacturing apparatus has a processing furnace 7 for processing semiconductor wafers 12, a pole 8 stood vertically in the processing furnace 7, and holding portions 9, 10, 11 provided horizontally to the pole 8 in a plurality of places disposed in the vertical direction of the pole 8 whereon the semiconductor wafers 12 can be held in a standing way. In the semiconductor manufacturing apparatus, the paired holding portions 9, 10 and the paired holding portions 10, 11 of the respective ones which neighbor respectively on each other in the vertical direction of the pole 8 are so attached to the pole 8 in the different directions from each other that the directions of the parallel planes of the wafers 12 held respectively on them are made different from each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor manufacturing apparatus and a semiconductor device manufacturing method for improving the uniformity of processing of a semiconductor wafer.

[0002]

2. Description of the Related Art FIG. 6 is a diagram showing the configuration of a conventional semiconductor manufacturing apparatus disclosed in, for example, Japanese Patent Application Laid-Open No. 10-92755. In the drawing, 1 is a furnace core tube for processing a semiconductor wafer 6, 2 is a heater provided around the furnace core tube 1, 3 is a furnace body including the furnace core tube 1 and the heater 2, and 4 is a furnace. Posts 5a, 5b, and 5c vertically formed in the core tube 1 are supporting boat members arranged in a comb-like manner on the post 4, and support a plurality of semiconductor wafers 6 at predetermined intervals. It is formed to be possible. Further, the supporting boat members 5a, 5b,
5c is formed in a structure that is overlapped in the same direction in the plane direction.

[0003] A is a gas supplied to the furnace core tube 1 and the supply direction is indicated by an arrow. As shown in the figure, the processing gas A is supplied from the upper part to the lower part of the furnace core tube 1.
This figure is a view in which the semiconductor wafer 6 is placed on the support boat 5 and viewed from the side of the semiconductor wafer 6.

Next, a method of manufacturing a semiconductor device using the conventional semiconductor manufacturing apparatus configured as described above will be described. First, a plurality of semiconductor wafers 6 are placed on the supporting boat member 5 outside the furnace core tube 1. Next, the support 4 is connected to the furnace core tube 1.
The inside of the furnace core tube 1 is heated by the heater 2 and the gas A is supplied from the direction of the arrow to process each semiconductor wafer 6.

[0005]

The conventional semiconductor manufacturing apparatus is configured as described above, and supplies gas from the upper part of the furnace core tube 1 to process all the semiconductor wafers 6 in the same direction. Although a uniform processing of the semiconductor wafer 6 is to be obtained, the uniformity of gas supply throughout the furnace core tube 1 is insufficient, or the semiconductor wafers 6 are all in the same direction in the vertical direction of the furnace core tube 1. Therefore, there has been a problem that the uniformity of the processing environment is insufficient for the upper and lower semiconductor wafers 6 and sufficient uniformity cannot be obtained in the processing of each semiconductor wafer.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus and a semiconductor device manufacturing method capable of improving the uniformity of processing of each semiconductor wafer. Aim.

[0007]

Means for Solving the Problems Claim 1 according to the present invention.
The semiconductor manufacturing apparatus includes a processing furnace for processing semiconductor wafers, a column vertically installed in the processing furnace, and a plurality of columns vertically installed on the column horizontally, and the semiconductor wafer is set up. In a semiconductor manufacturing apparatus having a support portion that can be supported by the support portion, among the support portions, the support portions that are adjacent to each other in the vertical direction of the column are different from each other in a plane direction of the semiconductor wafer supported by each support portion. In addition, the mounting directions of the support portions are different from each other.

According to a second aspect of the present invention, in the semiconductor manufacturing apparatus according to the first aspect, the supporting portions are formed at 180 ° or 120 ° intervals on the same circumference of the column, and the vertical direction of the column is Are formed so as to be shifted from each other by 90 degrees or 60 degrees in the circumferential direction.

According to a third aspect of the present invention, there is provided a semiconductor manufacturing apparatus, comprising: a processing furnace for processing a semiconductor wafer;
In a semiconductor manufacturing apparatus including a column vertically installed in a processing furnace, and a support horizontally installed on the column and on which a semiconductor wafer can be placed, a supply direction of a desired processing gas in the processing furnace is changed. , From top to bottom and bottom to top of the processing furnace, or from top to bottom of the processing furnace and / or
Alternatively, a gas supply means for supplying a processing gas is provided from the lower part to the upper part and from the support to the inner wall side of the processing furnace.

According to a fourth aspect of the present invention, in the semiconductor manufacturing apparatus according to the third aspect, the supply of the processing gas from the column of the gas supply means to the inner wall side of the processing furnace is performed by supplying a gas from the outside through the column. A path is formed, a desired portion of the support is opened, and the process is performed from the support to the semiconductor wafer mounted on the support.

According to a fifth aspect of the present invention, there is provided a semiconductor manufacturing apparatus, comprising: a processing furnace for processing a semiconductor wafer;
In a semiconductor manufacturing apparatus including a vertically installed support in a processing furnace and a support horizontally mounted on the support and on which a semiconductor wafer can be placed, the support is placed in the processing furnace in a vertical direction of the support. And a rotating means for rotating the shaft around the shaft.

According to a sixth aspect of the present invention, in the semiconductor manufacturing apparatus according to any one of the third to fifth aspects, the supporting portion is formed so that the semiconductor wafer can be supported upright. .

According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a processing furnace for processing a semiconductor wafer; a column vertically installed in the processing furnace; In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a supporting portion on which a semiconductor wafer can be mounted, a supply direction of a desired processing gas in a processing furnace is changed from an upper part of the processing furnace to a lower part. The processing of the semiconductor wafer is performed while supplying a processing gas such that the processing gas is supplied from the top to the top or from the top to the bottom of the processing furnace and / or from the bottom to the top and from the support to the inner wall side of the processing furnace.

According to a second aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: a processing furnace for processing a semiconductor wafer; a column installed vertically in the processing furnace; In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a supporting portion on which a semiconductor wafer can be mounted, the supporting portion installed on the supporting column is rotated in the vertical direction of the supporting column into the processing furnace. The semiconductor wafer is processed while rotating.

According to a ninth aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a processing furnace for processing a semiconductor wafer; a column installed vertically in the processing furnace; In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a supporting portion on which a semiconductor wafer can be placed, the mounting or taking out of the transferred semiconductor wafer to or from the supporting portion can be performed by changing the vertical direction of the column. The rotation is performed as a shaft, and the supporting portion installed on the support is rotated in the processing furnace.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, embodiments of the present invention will be described. FIG. 1 is a view showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention, and FIG. 2 is a view of the semiconductor manufacturing apparatus shown in FIG.
2A is a diagram before the semiconductor wafer is mounted, and FIG. 2B is a diagram after the semiconductor wafer is mounted. In the figure, reference numeral 7 denotes a processing furnace for processing the semiconductor wafer 12, and reference numeral 8 denotes a column installed in the processing furnace 7 in a vertical direction.

A is a processing gas supplied into the processing furnace 7,
The supply direction is indicated by an arrow. As shown in the figure, the processing gas A is supplied from the upper part to the lower part of the processing furnace 7. Reference numerals 9a, 9b, 10a, 10b, 11a, and 11b denote support portions, which are provided at a plurality of positions in the vertical direction of the column 8, in this case, at three positions (three stages). Furthermore, they are installed on the same circumference of the column 8 at an interval of 180 degrees here. The plurality of semiconductor wafers 12 are installed horizontally on the support columns 8.
Are supported upright at predetermined intervals.

Of these support portions, the support portions 9a, 9b, 10
a, 10b and 10a, 10b and 11a, 11b
Are formed so that the planar directions of the semiconductor wafers 12 supported by the respective support portions are different from each other (see FIG. 2B), and the mounting directions of the respective support portions are different from each other.

Here, the supporting portions 9a, 11a and 10a and 9b, 11b which are vertically adjacent to the column 8 are provided.
And 10b (or supporting portions 9a, 11a and 10b, and 9b, 11b and 10a) are 90
It is formed so as to be staggered (see FIG. 2A).

In the semiconductor manufacturing apparatus of the first embodiment configured as described above, a plurality of semiconductor wafers 12 are mounted on each support as shown in FIG. 2B. Then
For example, when semiconductor wafers face in the same direction and are placed in the same vertical relationship in a processing furnace as in the related art, the distribution of semiconductor wafers in the entire processing furnace effectively shifts the inside of the processing furnace. Not used. However, as in the present invention, the plane directions of the semiconductor wafers 12 are different from each other, and the whole of the inside of the processing furnace 7 is effectively used, so that the distribution of the semiconductor wafers 12 in the whole of the processing furnace 7 is uniform. Therefore, the uniformity of processing of each semiconductor wafer 12 in the processing furnace 7 can be improved.

Further, in the case where the processing furnace 7 is heated from the periphery thereof by a heater or the like, for example, in the case of oxidation diffusion processing or CVD processing, the semiconductor wafer 12 is entirely formed in the processing furnace 7 in this way. , The heating efficiency is improved, and the processing uniformity of the semiconductor wafer 12 can be improved.

Further, in the case of a method for manufacturing a semiconductor device in which the processing gas A is supplied, the processing gas A is supplied from above to below as shown in FIG. Unlike the case where the semiconductor wafer is formed in the same place and installed in a limited place in the processing furnace, the semiconductor wafers are uniformly distributed throughout the processing furnace.
Compared to the case where the semiconductor wafer 12 is formed at the same location, the processing gas A is supplied uniformly in the vertical relationship between the semiconductor wafers in the processing furnace 7, and the uniformity of the processing of the semiconductor wafer 12 is improved. Can be.

Further, in the first embodiment, an example in which two support portions are formed on the same circumference of the column 8 has been described. However, the present invention is not limited to this, and the columns are adjacent to each other in the vertical direction. The support portions may be formed so that the mounting directions of the support portions are different from each other so that the planar directions of the semiconductor wafers supported by the support portions are different from each other.

As another example, as shown in FIG. 3, the support portions are formed on the same circumference of the support column at intervals of 120 degrees, and are at the upper stage in the vertical direction of the support column 8 as in the first embodiment. Upper supporting portions 13a, 13b, 13c and lower supporting portions 14a, 14b, 14c which are lower stages of the upper supporting portions.
Are formed respectively. The upper and lower supporting portions are formed so as to be shifted from each other by 60 degrees in the circumferential direction (FIG. 3).
(A)).

As shown in FIG. 3B, when the semiconductor wafer 12 is mounted, the plane directions of the semiconductor wafers supported by the respective support portions are different from each other. Therefore, the semiconductor wafers 12 are uniformly distributed throughout the processing furnace 7, and the uniformity of processing of each semiconductor wafer 12 in the processing furnace 7 can be improved.

However, from the relationship between the size of the semiconductor wafer and the processing furnace, if the number of support portions formed on the same circumference of the column is up to about three, the overlap of the column of the semiconductor wafer in the plane direction is small. Therefore, it is considered that the inside of the processing furnace can be effectively used, and improvement in the uniformity of the processing of the semiconductor wafer can be expected.

Here, an example in which three columns (three steps) are formed in the vertical direction of the column 8 is shown, but the present invention is not limited to this, and two columns (two steps) or four points (four steps) in the vertical direction are provided. Also in the above case, the support portions formed on the support columns are different from each other in the plane directions of the semiconductor wafers supported by the support portions, as in the first embodiment. As long as the mounting directions of the support portions are different from each other, the same effects as those of the first embodiment can be obtained.

Embodiment 2 FIG. 4 shows an embodiment of the present invention.
FIG. 3 is a diagram illustrating a configuration of a semiconductor manufacturing apparatus according to a second embodiment. Figure smell
The same parts as those in the first embodiment are denoted by the same reference numerals.
Description is omitted. B ₁, B_Two, B_ThreeIs a gas supply in the processing furnace 7.
Processing gas supplied by supply means (not shown)
The arrow indicates the gas supply direction in the processing furnace 7.
You. Thus, the processing gas from the upper part to the lower part of the processing furnace 7
B₁, Processing gas B from the lower part to the upper part of the processing furnace 7_Two, Processing furnace
7 from the support 8 to the inner wall of the processing furnace 7, here the semiconductor wafer.
Processing gas B toward C12_ThreeAre each supplied
You.

The means for supplying the processing gases B ₁ and B ₂ can be easily obtained by forming them in the same manner as in a conventional semiconductor manufacturing apparatus. Further, as a supply means of the processing gas B ₃ , for example, a gas supply path through which the processing gas can pass with the inside of the column being hollow is formed at a desired position in the direction in which the semiconductor wafer 12 of the column is mounted. If a plurality of openings are formed, it can be easily configured and supplied.

In the semiconductor manufacturing apparatus of the second embodiment configured as described above, as shown in FIG. 4, a plurality of semiconductor wafers 12 are mounted, and the processing gases B ₁ and B ₂ are placed in the processing furnace 7. , B
_When the processing of the semiconductor device is performed by supplying ₃ , the processing gas is uniformly distributed in the processing furnace 7, and the processing of each semiconductor wafer 12 is uniformly performed in the processing furnace 7. Further, the processing gas for B ₃ are to be reliably supplied to the semiconductor wafer 12, it is possible to reliably perform treatment to the semiconductor wafers 12.

Further, in the case where the processing furnace 7 is heated from the periphery thereof by a heater or the like, for example, in the case of oxidation diffusion processing or CVD processing, each processing gas supplied into the processing furnace 7 in this manner. As a result, the inside of the processing furnace 7 is uniformly heated. Therefore, each semiconductor wafer 12 is uniformly heated, and the uniformity of processing of the semiconductor wafer 12 can be improved.

Here, B ₁ ,
An example in which both B ₂ and B ₃ are supplied has been described. However, the present invention is not limited to this. If these processing gases are supplied so that a flow in at least two directions can be obtained, the conventional method of manufacturing a semiconductor device It goes without saying that the processing gas becomes more uniform in the processing furnace than in the case of, and the processing uniformity of the semiconductor device is improved.

Embodiment 3 FIG. 5 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to Embodiment 3 of the present invention. In the figure, the same parts as those in the above embodiments are denoted by the same reference numerals, and description thereof will be omitted. Reference numeral 15 denotes a rotating means for rotating the support 8 around its vertical direction as an axis.

When processing a semiconductor wafer with the semiconductor manufacturing apparatus of the third embodiment configured as described above, the processing is performed while rotating the column 8 by the rotating means 15 during the processing, so that the processing is performed in the processing furnace 7. The processing environment for each of the semiconductor wafers 12 is further uniformed, and the uniformity of the processing of the semiconductor wafers 12 can be further improved.

Further, in the case where the processing furnace 7 is heated from the periphery thereof by a heater or the like, for example, in the case of oxidation diffusion processing or CVD processing, by rotating the column 8 in this manner, the inside of the processing furnace 7 is Is stirred, and the inside of the processing furnace 7 is uniformly heated. Therefore, each semiconductor wafer 12 is uniformly heated, and the uniformity of processing of the semiconductor wafer 12 can be improved.

Further, in the case of a method of manufacturing a semiconductor device in which a processing gas is supplied into the processing furnace 7, the atmosphere in the processing furnace 7 is agitated by rotating the column 8 as described above. The processing gas is uniformly diffused in the inside 7, and the uniformity of processing of the semiconductor wafer 12 can be improved.

When the semiconductor wafer has been transferred from the previous step or when the semiconductor wafer is transferred from the present step to the next step, the semiconductor wafer is placed on or taken out of the supporting portion by moving the column in the vertical direction. If the transfer is performed while rotating as a shaft, for example, when transferring a semiconductor wafer from a transfer trolley used for transfer to a semiconductor manufacturing apparatus, the transfer can be performed without changing the transfer place, thereby improving work efficiency. be able to. In addition, when it is performed by a transfer robot or the like, it can be performed only by a simple operation.

In each of the above embodiments, each device has been described as a different device or a different method.
The present invention is not limited to this, and can be implemented in appropriate combinations. Needless to say, the combination improves the uniformity of processing of the semiconductor wafer.

[0039]

As described above, according to the first aspect of the present invention, a processing furnace for processing semiconductor wafers, a column vertically installed in the processing furnace, and a vertical column of the column. In a semiconductor manufacturing apparatus provided with a support portion that is horizontally installed on a support at a plurality of locations and that can support an erect semiconductor wafer, among the support portions, the support portions that are adjacent in the vertical direction of the support are each support portion. Since the mounting directions of the supporting portions are different from each other so that the planar directions of the semiconductor wafers supported by the semiconductor wafers are different from each other, the distribution of the semiconductor wafers in the processing furnace becomes uniform, and the processing of the semiconductor wafers is performed. It is possible to provide a semiconductor manufacturing apparatus capable of improving the uniformity of the semiconductor device.

According to a second aspect of the present invention, in the first aspect, the support portion is formed on the same circumference of the column as the 180.
Or 120 degrees, and the support portions adjacent to each other in the vertical direction of the support column are shifted by 90 degrees or 60 degrees in the circumferential direction, so that the distribution of the semiconductor wafers in the processing furnace is more uniform. As a result, it is possible to provide a semiconductor manufacturing apparatus capable of further improving the uniformity of processing of a semiconductor wafer.

According to a third aspect of the present invention, there is provided a processing furnace for processing a semiconductor wafer, a column vertically installed in the processing furnace, and horizontally mounted on the column. In a semiconductor manufacturing apparatus having a mountable support portion, the supply direction of a desired processing gas in the processing furnace is from upper to lower and lower to upper of the processing furnace, or from upper to lower of the processing furnace. And / or from the bottom to the top and from the columns to the inner wall of the processing furnace,
Since the gas supply means for supplying the processing gas is provided, the supply of the processing gas in the processing furnace becomes uniform, so that it is possible to provide a semiconductor manufacturing apparatus capable of improving the uniformity of the processing of the semiconductor wafer. Becomes

According to a fourth aspect of the present invention, in the third aspect, the supply of the processing gas from the support of the gas supply means to the inner wall side of the processing furnace is performed by setting the inside of the support to a gas supply path from the outside, Since a desired portion of the support is opened and the process is performed from the support to the semiconductor wafer mounted on the support, the processing gas can be reliably supplied to the semiconductor wafer, so that the semiconductor wafer can be reliably processed. It is possible to provide a semiconductor manufacturing apparatus capable of performing the above.

According to a fifth aspect of the present invention, there is provided a processing furnace for processing a semiconductor wafer, a column vertically installed in the processing furnace, and horizontally mounted on the column. In a semiconductor manufacturing apparatus having a support portion on which a support can be placed, a rotating means for rotating the support in a processing furnace around the vertical direction of the support is provided, so that the environment of each semiconductor wafer becomes uniform, and each semiconductor It is possible to provide a semiconductor manufacturing apparatus capable of improving the uniformity of wafer processing.

According to a sixth aspect of the present invention, in any one of the third to fifth aspects, the supporting portion is formed so as to be capable of supporting the semiconductor wafer upright, thereby lowering the working efficiency. It is possible to provide a semiconductor manufacturing apparatus that can be performed without causing the above.

According to a seventh aspect of the present invention, there is provided a processing furnace for processing a semiconductor wafer, a column vertically installed in the processing furnace, and horizontally mounted on the column. In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a mountable support portion, a supply direction of a desired processing gas in a processing furnace, from the top to the bottom of the processing furnace and from the bottom to the top, or Since the processing of the semiconductor wafer is performed while supplying the processing gas from the upper part to the lower part of the processing furnace and / or from the lower part to the upper part and from the column to the inner wall side of the processing furnace, the processing gas in the processing furnace is Since the supply is uniform, it is possible to provide a semiconductor device manufacturing method capable of improving the uniformity of processing of a semiconductor wafer.

According to an eighth aspect of the present invention, there is provided a processing furnace for processing a semiconductor wafer, a column installed in the processing furnace in a vertical direction, and a semiconductor wafer installed horizontally on the column. In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a support portion capable of being mounted, a semiconductor device is manufactured by rotating a support portion mounted on a column by rotating the column around a vertical direction in a processing furnace. Since wafer processing is performed, the environment of each semiconductor wafer becomes uniform, so that it is possible to provide a semiconductor device manufacturing method capable of improving the processing uniformity of each semiconductor wafer.

According to a ninth aspect of the present invention, there is provided a processing furnace for processing a semiconductor wafer, a column installed in a vertical direction in the processing furnace, and horizontally mounted on the column. In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a mountable support portion, a method of mounting or taking out a transferred semiconductor wafer to or from a support portion is performed by rotating the support around a vertical direction of the support as an axis. Since the process is performed while rotating the support portion installed in the semiconductor device, it is possible to provide a method of manufacturing a semiconductor device capable of improving work efficiency.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a top view showing a configuration of the semiconductor manufacturing apparatus shown in FIG.

FIG. 3 is a top view illustrating a configuration of another semiconductor manufacturing apparatus.

FIG. 4 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

FIG. 5 is a diagram showing a configuration of a semiconductor manufacturing apparatus according to a third embodiment of the present invention.

FIG. 6 is a diagram illustrating a configuration of a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

7 processing furnace, 8 columns, 9a, 9b, 10a, 10b,
11a, 11b, 13a, 13b, 13c, 14a, 1
4b, 14c support portion, 12 semiconductor wafer, 15 rotating _{means, A, B 1, B 2} , B 3 process gas.

Claims (9)

[Claims] 1. A processing furnace for processing semiconductor wafers, a support vertically installed in the processing furnace, and a plurality of semiconductors mounted horizontally on the support at a plurality of vertical positions of the support. In a semiconductor manufacturing apparatus provided with a supporting portion capable of supporting a wafer upright, among the supporting portions, the supporting portions which are vertically adjacent to each other in the vertical direction of the column are the semiconductor wafers supported by the supporting portions. Wherein the mounting directions of the support portions are different from each other so that the planar directions of the support members are different from each other. 2. The support part is provided on the same circumference of the column as 180 °.
2. The semiconductor manufacturing device according to claim 1, wherein the support portions are formed at an interval of 120 ° or 120 °, and the support portions adjacent to each other in the vertical direction of the support column are formed so as to be shifted by 90 ° or 60 ° in the circumferential direction. 3. apparatus. 3. A processing furnace for processing a semiconductor wafer, a support vertically installed in the processing furnace, and a support horizontally mounted on the support and capable of mounting the semiconductor wafer thereon. In the semiconductor manufacturing apparatus provided with, the supply direction of a desired processing gas in the processing furnace is from the upper part to the lower part and from the lower part to the upper part of the processing furnace, or from the upper part to the lower part and / or the lower part of the processing furnace. From the upper part and from the support to the inner wall side of the processing furnace,
A semiconductor manufacturing apparatus comprising gas supply means for supplying the processing gas. 4. The process gas is supplied from the support of the gas supply means to the inner wall side of the processing furnace by setting the inside of the support to a gas supply path from the outside, opening a desired portion of the support, and supporting the support from the support. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the process is performed on a semiconductor wafer mounted on the unit. 5. A processing furnace for processing a semiconductor wafer, a support vertically installed in the processing furnace, and a support horizontally installed on the support and capable of mounting the semiconductor wafer. A rotating means for rotating the support in the processing furnace around a vertical direction of the support as an axis. 6. The semiconductor manufacturing apparatus according to claim 3, wherein the supporting portion is formed so as to be able to support the semiconductor wafer upright. 7. A processing furnace for processing a semiconductor wafer, a support vertically installed in the processing furnace, and a support horizontally installed on the support and capable of mounting the semiconductor wafer thereon. In a method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having: a direction in which a desired processing gas is supplied into the processing furnace from the upper part to the lower part and from the lower part to the upper part of the processing furnace, or From top to bottom and /
Alternatively, a method of manufacturing a semiconductor device, wherein the processing of the semiconductor wafer is performed while supplying the processing gas such that the processing gas is supplied from a lower portion to an upper portion and from the support to an inner wall side of the processing furnace. 8. A processing furnace for processing a semiconductor wafer, a support vertically installed in the processing furnace, and a support horizontally mounted on the support and capable of mounting the semiconductor wafer. In the method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus having a method of manufacturing a semiconductor device, the semiconductor wafer is rotated while rotating the support portion provided on the support column in a vertical direction of the support column in the processing furnace. A method for manufacturing a semiconductor device, comprising performing a process. 9. A processing furnace for processing a semiconductor wafer, a support vertically installed in the processing furnace, and a support horizontally mounted on the support and capable of mounting the semiconductor wafer. In the method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus having the above, the mounting or taking out of the transferred semiconductor wafer to or from the supporting portion is rotated about the vertical direction of the support, and the semiconductor wafer is mounted on the support. A method of manufacturing the semiconductor device, wherein the method is performed while rotating the supporting portion.