JP2001291595A5 - - Google Patents

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JP2001291595A5
JP2001291595A5 JP2001025449A JP2001025449A JP2001291595A5 JP 2001291595 A5 JP2001291595 A5 JP 2001291595A5 JP 2001025449 A JP2001025449 A JP 2001025449A JP 2001025449 A JP2001025449 A JP 2001025449A JP 2001291595 A5 JP2001291595 A5 JP 2001291595A5
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emitting device
light
anode
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over
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Claims (29)

陽極、陰極、前記陽極及び前記陰極の間のＥＬ層並びに前記陽極に接した反射電極を含むことを特徴とする発光装置。  A light emitting device comprising: an anode; a cathode; an EL layer between the anode and the cathode; and a reflective electrode in contact with the anode. 反射電極の上の陽極、該陽極の上のＥＬ層及び該ＥＬ層の上の陰極を含むことを特徴とする発光装置。  A light emitting device comprising: an anode over a reflective electrode; an EL layer over the anode; and a cathode over the EL layer. 請求項１または請求項２において、前記陽極及び前記陰極は可視光に対して透明であることを特徴とする発光装置。  3. The light emitting device according to claim 1, wherein the anode and the cathode are transparent to visible light. 陽極、陰極、前記陽極及び前記陰極の間のＥＬ層、前記陽極に接した反射電極並びに前記陰極に接した補助電極を含むことを特徴とする発光装置。  A light emitting device comprising: an anode; a cathode; an EL layer between the anode and the cathode; a reflective electrode in contact with the anode; and an auxiliary electrode in contact with the cathode. 反射電極の上の陽極、該陽極の上のＥＬ層、該ＥＬ層の上の陰極及び該陰極の上の補助電極を含むことを特徴とする発光装置。  A light emitting device comprising: an anode over a reflective electrode; an EL layer over the anode; a cathode over the EL layer; and an auxiliary electrode over the cathode. 請求項４または請求項５において、前記陽極、前記陰極及び前記補助電極は可視光に対して透明であることを特徴とする発光装置。6. The light-emitting device according to claim 4 , wherein the anode, the cathode, and the auxiliary electrode are transparent to visible light. 請求項４乃至請求項６のいずれか一において、前記補助電極は酸化物導電膜であることを特徴とする発光装置。 7. The light-emitting device according to claim 4 , wherein the auxiliary electrode is an oxide conductive film. 請求項７において、前記補助電極の膜厚は１０ｎｍから２００ｎｍであることを特徴とする発光装置。8. The light emitting device according to claim 7, wherein the auxiliary electrode has a thickness of 10 nm to 200 nm. 請求項１乃至請求項８のいずれか一において、前記反射電極は画素電極であることを特徴とする発光装置。9. The light emitting device according to claim 1, wherein the reflective electrode is a pixel electrode. 請求項１乃至請求項９のいずれか一において、前記反射電極には薄膜トランジスタが電気的に接続されていることを特徴とする発光装置。In any one of claims 1 to 9, wherein the reflective electrode is a light-emitting device, characterized in that the thin film transistor are electrically connected. 金属膜または導電膜の上の陽極、該陽極の上のＥＬ層及び該ＥＬ層の上の陰極を含むことを特徴とする発光装置。A light-emitting device comprising an anode over a metal film or a conductive film, an EL layer over the anode, and a cathode over the EL layer. 請求項１１において、前記陽極及び前記陰極は可視光に対して透明であることを特徴とする発光装置。12. The light emitting device according to claim 11, wherein the anode and the cathode are transparent to visible light. 金属膜または導電膜の上の陽極、該陽極の上のＥＬ層、該ＥＬ層の上の陰極及び該陰極の上の補助電極を含むことを特徴とする発光装置。A light emitting device comprising: an anode over a metal film or a conductive film; an EL layer over the anode; a cathode over the EL layer; and an auxiliary electrode over the cathode. 請求項１３において、前記陽極、前記陰極及び前記補助電極は可視光に対して透明であることを特徴とする発光装置。The light-emitting device according to claim 13, wherein the anode, the cathode, and the auxiliary electrode are transparent to visible light. 請求項１３または請求項１４において、前記補助電極は酸化物導電膜であることを特徴とする発光装置。15. The light emitting device according to claim 13, wherein the auxiliary electrode is an oxide conductive film. 請求項１５において、前記補助電極の膜厚は１０ｎｍから２００ｎｍであることを特徴とする発光装置。The light-emitting device according to claim 15, wherein the auxiliary electrode has a thickness of 10 nm to 200 nm. 請求項１１乃至請求項１６のいずれか一において、前記金属膜はアルミニウムを含む膜または銀薄膜であることを特徴とする発光装置。17. The light-emitting device according to claim 11, wherein the metal film is a film containing aluminum or a silver thin film. 請求項１７において、前記アルミニウムを含む膜はスカンジウムまたはチタンが含まれたアルミニウム膜であることを特徴とする発光装置。18. The light-emitting device according to claim 17, wherein the film containing aluminum is an aluminum film containing scandium or titanium. 請求項１１乃至請求項１８のいずれか一において、前記導電膜はアルミニウムメッキまたは銀メッキを施した膜であることを特徴とする発光装置。The light-emitting device according to claim 11, wherein the conductive film is a film plated with aluminum or silver. 請求項１１乃至請求項１９のいずれか一において、前記金属膜または導電膜には薄膜トランジスタが電気的に接続されていることを特徴とする発光装置。20. The light-emitting device according to claim 11, wherein a thin film transistor is electrically connected to the metal film or the conductive film. 請求項１乃至請求項２０のいずれか一において、前記陽極は酸化物導電膜であり、前記陰極は可視光に対して透明な金属膜であることを特徴とする発光装置。In any one of claims 1 to 20, wherein the anode is an oxide conductive film, the cathode emitting device which is a transparent metal film to visible light. 請求項２１において、前記陽極の膜厚は１０ｎｍから２００ｎｍであることを特徴とする発光装置。The light-emitting device according to claim 21, wherein the anode has a thickness of 10 nm to 200 nm. 請求項２１において、前記陰極の膜厚は１０ｎｍから７０ｎｍであることを特徴とする発光装置。The light-emitting device according to claim 21, wherein the cathode has a thickness of 10 nm to 70 nm. 請求項１乃至請求項２３のいずれか一に記載の発光装置を表示部もしくは光源として有することを特徴とする電気器具。Appliance, characterized in that it comprises a display unit or a light source a light emitting device according to any one of claims 1 to 23. 反射電極を形成し、該反射電極の上に陽極を形成し、該陽極の上にＥＬ層を形成し、該ＥＬ層の上に陰極を形成することを特徴とする発光装置の作製方法。  A method for manufacturing a light-emitting device, comprising: forming a reflective electrode; forming an anode over the reflective electrode; forming an EL layer over the anode; and forming a cathode over the EL layer. 請求項２５において、前記陽極を可視光に対して透明な酸化物導電膜で形成し、前記陰極を可視光に対して透明な金属膜で形成することを特徴とする発光装置の作製方法。26. The method for manufacturing a light-emitting device according to claim 25 , wherein the anode is formed using an oxide conductive film that is transparent to visible light, and the cathode is formed from a metal film that is transparent to visible light. 反射電極を形成し、該反射電極の上に陽極を形成し、該陽極の上にＥＬ層を形成し、該ＥＬ層の上に陰極を形成し、該陰極の上に補助電極を形成することを特徴とする発光装置の作製方法。  Forming a reflective electrode, forming an anode on the reflective electrode, forming an EL layer on the anode, forming a cathode on the EL layer, and forming an auxiliary electrode on the cathode A method for manufacturing a light-emitting device. 請求項２７において、前記陽極及び前記補助電極を可視光に対して透明な酸化物導電膜で形成し、前記陰極を可視光に対して透明な金属膜で形成することを特徴とする発光装置の作製方法。28. The light-emitting device according to claim 27 , wherein the anode and the auxiliary electrode are formed of an oxide conductive film that is transparent to visible light, and the cathode is formed of a metal film that is transparent to visible light. Manufacturing method. 請求項２５乃至請求項２８のいずれか一において、前記反射電極を薄膜トランジスタに電気的に接続させて形成することを特徴とする発光装置の作製方法。In any one of claims 25 to claim 28, a method for manufacturing a light emitting device, which comprises forming electrically connected to the reflective electrode to the thin film transistor.
JP2001025449A 2000-02-03 2001-02-01 Light emitting device and manufacturing method thereof Expired - Fee Related JP3967081B2 (en)

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