JP2001284572A - 電子デバイス - Google Patents

電子デバイス

Info

Publication number
JP2001284572A
JP2001284572A JP2000090822A JP2000090822A JP2001284572A JP 2001284572 A JP2001284572 A JP 2001284572A JP 2000090822 A JP2000090822 A JP 2000090822A JP 2000090822 A JP2000090822 A JP 2000090822A JP 2001284572 A JP2001284572 A JP 2001284572A
Authority
JP
Japan
Prior art keywords
wires
wire
switch
molecular
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000090822A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001284572A5 (enExample
Inventor
James R Heath
ジェイムス・アール・ヒース
R Stanley Williams
アール・スタンレイ・ウィリアムス
J Kyuukusu Philip
フィリップ・ジェイ・キュークス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Priority to JP2000090822A priority Critical patent/JP2001284572A/ja
Publication of JP2001284572A publication Critical patent/JP2001284572A/ja
Publication of JP2001284572A5 publication Critical patent/JP2001284572A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2000090822A 2000-03-29 2000-03-29 電子デバイス Pending JP2001284572A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000090822A JP2001284572A (ja) 2000-03-29 2000-03-29 電子デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000090822A JP2001284572A (ja) 2000-03-29 2000-03-29 電子デバイス

Publications (2)

Publication Number Publication Date
JP2001284572A true JP2001284572A (ja) 2001-10-12
JP2001284572A5 JP2001284572A5 (enExample) 2007-05-10

Family

ID=18606373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000090822A Pending JP2001284572A (ja) 2000-03-29 2000-03-29 電子デバイス

Country Status (1)

Country Link
JP (1) JP2001284572A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004096697A1 (ja) * 2003-04-28 2004-11-11 Japan Science And Technology Agency 機能素子およびその製造方法ならびに機能システムならびに機能材料
JP2005537650A (ja) * 2002-08-30 2005-12-08 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 構成可能な分子スイッチアレイ
WO2006095435A1 (ja) * 2005-03-10 2006-09-14 Fujitsu Limited 架橋配位子、金属錯体、及び金属錯体集積構造物
JP2007229918A (ja) * 2007-04-09 2007-09-13 Japan Science & Technology Agency 機能素子およびその製造方法ならびに機能システム
JP2008134049A (ja) * 2004-09-09 2008-06-12 Hokkaido Univ クリーンユニットおよびクリーンユニットシステム
JP2009525193A (ja) * 2006-01-27 2009-07-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． ミックススケール電子界面
JP2009525558A (ja) * 2006-01-30 2009-07-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． トンネル抵抗接合部ベースのマイクロスケール／ナノスケールデマルチプレクサアレイ
JP2010507184A (ja) * 2006-10-16 2010-03-04 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． クロスバーメモリシステム及びクロスバーメモリシステムのクロスバーメモリ接合部に対して書込み及び読出しを行なう方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453970A (en) * 1993-07-13 1995-09-26 Rust; Thomas F. Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5453970A (en) * 1993-07-13 1995-09-26 Rust; Thomas F. Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005537650A (ja) * 2002-08-30 2005-12-08 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 構成可能な分子スイッチアレイ
US8004876B2 (en) 2002-08-30 2011-08-23 Hewlett-Packard Development Company, L.P. Configurable molecular switch array
WO2004096697A1 (ja) * 2003-04-28 2004-11-11 Japan Science And Technology Agency 機能素子およびその製造方法ならびに機能システムならびに機能材料
JP2008134049A (ja) * 2004-09-09 2008-06-12 Hokkaido Univ クリーンユニットおよびクリーンユニットシステム
WO2006095435A1 (ja) * 2005-03-10 2006-09-14 Fujitsu Limited 架橋配位子、金属錯体、及び金属錯体集積構造物
JP2009525193A (ja) * 2006-01-27 2009-07-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． ミックススケール電子界面
JP2009525558A (ja) * 2006-01-30 2009-07-09 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． トンネル抵抗接合部ベースのマイクロスケール／ナノスケールデマルチプレクサアレイ
JP2010507184A (ja) * 2006-10-16 2010-03-04 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． クロスバーメモリシステム及びクロスバーメモリシステムのクロスバーメモリ接合部に対して書込み及び読出しを行なう方法
JP2007229918A (ja) * 2007-04-09 2007-09-13 Japan Science & Technology Agency 機能素子およびその製造方法ならびに機能システム

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