JP2001273940A - High-frequency connector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an insulator from being cracked, and obtain a high-frequency connector with a good airtight encapsulation. SOLUTION: This is the high-frequency connector 4 comprising a cylindrical outer conductor 1, an insulator 2 that is airtightly joined in contact with the inner face of this outer conductor 1 and that has a through hole 2a in nearly parallel with a shaft direction of the outer conductor 1, and a rod-like central conductor 3 that, inserted through the through hole 2a, is airtightly joined with the both ends protruding from the insulator 2. This is characterized by that α2<α3<=α1 and α3-α2<=1 ppm/ deg.C on condition that average linear thermal expansion factors of the outer conductor 1, the insulator 2 and the central conductor 3 at 25-450 deg.C are assumed as α1, α2 and α3 ppm/ deg.C, respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency coaxial connector, and more particularly to a high-frequency connector for electrically connecting electric wiring inside and outside a package for a microwave integrated circuit while maintaining hermetic sealing in the package. .

[0002]

2. Description of the Related Art In a high-frequency connector, an insulator disposed between a center conductor and an outer conductor is changed from a resin-made insulator to a ceramic-made insulator, thereby improving pressure resistance, vacuum tightness, and voltage resistance. At the same time, the improvement of the electrical characteristics in the high-frequency region has been achieved. Recently, glass has been used as an insulator in order to reduce costs and man-hours in the manufacturing process.

[0003] Such a glass has a dielectric constant of about 4.1.
Borosilicate glass having a low frequency and good high frequency characteristics is used.

[0004]

However, the above glass has a low dielectric constant of about 4.1 and exhibits good high-frequency characteristics, but has a thermal expansion coefficient of about 3.9 ppm / ° C., and forms an outer conductor and a center conductor. Since the thermal expansion coefficient (5.1 to 5.3 ppm / ° C.) of a metal material such as an Fe—Ni—Co alloy is significantly different, when the outer conductor and the center conductor are joined with an insulator made of glass interposed therebetween, A large stress is generated due to the difference in the coefficient of thermal expansion between the insulator, the outer conductor, and the center conductor, and this stress acts on the insulator to move from near the center conductor of the insulator to the outer conductor. As a result, the insulator is cracked, and as a result, the hermetic sealing of the high-frequency connector is broken, and the vacuum hermeticity of the high-frequency connector is reduced.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a high-frequency connector having good vacuum tightness without cracking or cracking of an insulator. .

[0006]

A high-frequency connector according to the present invention has a cylindrical outer conductor and a through-hole substantially in parallel with the axial direction of the outer conductor, the inner conductor being inscribed in an airtight manner in contact with the inner peripheral surface of the outer conductor. In a high-frequency connector composed of an insulator having a rod-shaped center conductor that is inserted into a through hole and has both ends protruding from the insulator and joined in an airtight manner, the external conductor, the insulator and the center conductor at 25 to 450 ° C. When the average linear thermal expansion coefficients are respectively α1, α2 and α3 ppm / ° C., α2
<Α3 ≦ α1, and α3-α2 ≦ 1 ppm / ° C.

In the high-frequency connector of the present invention, the insulator is 55 to 65% by weight of silicon oxide, 18 to 28% by weight of boron oxide,
Sodium oxide 4-10% by weight, aluminum oxide 2-8
Wt%, potassium oxide 1-6 wt%, lithium oxide 1-
6% by weight and 0.5 to 3% by weight of barium oxide.

According to the high frequency connector of the present invention, 25 to 45
Since the difference in the average linear thermal expansion coefficient between the center conductor and the insulator at 0 ° C. is as small as 1 ppm / ° C. or less, when the outer conductor and the center conductor are joined by sandwiching the insulator made of glass therebetween, There is no large stress between the center conductor and the insulator due to the difference in the coefficient of thermal expansion between them, which effectively prevents cracks in the insulator and, as a result, the vacuum tightness High frequency connector with good

According to the high frequency connector of the present invention,
55-65% by weight of silicon oxide, 18-28% by weight of boron oxide, 4-10% by weight of sodium oxide, 2-8% by weight of aluminum oxide, 1-6% by weight of potassium oxide, 1-6% by weight of lithium oxide And 0.5 to 3% by weight of barium oxide, the average thermal expansion coefficient of the insulator at 25 to 450 ° C. is about 4.6 ppm / ° C.
The difference between the average thermal expansion coefficient of a metal material such as an e-Ni-Co alloy at 25 to 450 ° C can be made within 1 ppm / ° C.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view showing an embodiment of a high-frequency connector according to the present invention, wherein 1 is an outer conductor, 2 is an insulator, and 3 is a center conductor. 4 are configured.

The outer conductor 1 has a cylindrical shape made of an Fe-Ni-Co-based metal material such as an Fe-29Ni-17Co alloy or an Fe-29Ni-16Co alloy, and is used for attaching the high-frequency connector 4 to a package. For example, a through hole corresponding to the external conductor 1 is provided in a wall of a package, a high-frequency connector 4 is inserted into the through hole, and a brazing material such as silver brazing is used to connect the external conductor 1 and the wall of the package. The high frequency connector 4 is attached to the package.

Further, inside the outer conductor 1, an insulator 2 is joined in such a manner that its outer peripheral surface is insulated in an airtight manner with the inner peripheral surface of the outer conductor 1.

The insulator 2 comprises 55 to 65% by weight of silicon oxide, 18 to 28% by weight of boron oxide, 4 to 10% by weight of sodium oxide,
2-8% by weight of aluminum oxide, 1-6% by weight of potassium oxide, 1-6% by weight of lithium oxide and 0.
A through-hole 2a is formed in the center of the glass, which penetrates from one opening of the outer conductor 1 toward the other opening and is substantially parallel to the axial direction of the outer conductor 1. It is a substantially disc body.

The insulator 2 functions to hold the center conductor 3 while maintaining electrical insulation from the outer conductor 1. The center conductor 3 is inserted and fixed in the through hole 2a with both ends protruding. Have been.

The center conductor 3 is a rod-shaped body made of a Fe-Ni-Co-based metal material such as an Fe-29Ni-17Co alloy or an Fe-29Ni-16Co alloy, and has terminals for electrically connecting the inside and outside of the package. The semiconductor element inside the package is connected to one end on the inner side of the package via a lead wire, and the other end is connected to an electric device or the like outside the package. It is electrically connected to an external electric device.

According to the high-frequency connector 4 of the present invention, 25 to
Since the difference between the average linear thermal expansion coefficient of the center conductor 3 and the average thermal expansion coefficient of the insulator 2 at 450 ° C. was made as small as 1 ppm / ° C. or less, the insulator 2 made of glass was placed between the outer conductor 1 and the center conductor 3. When sandwiching and joining, no large stress is generated between the center conductor 3 and the insulator 2 due to the difference in the coefficient of thermal expansion between the center conductor 3 and the insulator 2, thereby effectively cracking the insulator 2. As a result, the high-frequency connector 4 having good vacuum tightness can be obtained.

According to the high frequency connector of the present invention,
55-65% by weight of silicon oxide, 18-28% by weight of boron oxide, 4-10% by weight of sodium oxide, 2-8% by weight of aluminum oxide, 1-6% by weight of potassium oxide, 1-6% by weight of lithium oxide And 0.5 to 3% by weight of barium oxide, the average thermal expansion coefficient of the insulator 2 at 25 to 450 ° C. is about 4.6 ppm / ° C., and the center conductor 3 is made of an Fe—Ni—Co alloy or the like. The difference from the average thermal expansion coefficient of the metal material at 25 to 450 ° C. can be made within 1 ppm / ° C.

Such a high-frequency connector 4 is manufactured by the following method. First, a raw material powder composed of silicon oxide, boron oxide, sodium oxide, aluminum oxide, potassium oxide, lithium oxide, and barium oxide is mixed with a suitable organic solvent, a solvent, and a binder to prepare the raw material powder and to mix the raw material powder. By press molding, a disk-shaped molded body having a through hole 2a having a diameter slightly larger than the diameter of the central conductor 3 at the center and having a diameter slightly smaller than the diameter of the inner periphery of the outer conductor 1 is formed. A molded product obtained by calcining this molded body at a temperature of 500 to 600 ° C. is prepared, and an Fe-29Ni-17Co alloy or an Fe-29Ni-16Co alloy is prepared.
An outer conductor 1 and a center conductor 3 are prepared by cutting a cylindrical or rod-shaped molded product made of a metal material such as an alloy into a predetermined length. Next, a molded article to be the insulator 2 is inserted and placed in the outer conductor 1 and the center conductor 3 is inserted into the through hole 2a and both ends thereof are inserted into the through hole 2a.
The outer conductor 1, the insulator 2, and the center conductor 3 are hermetically joined by melting the molded article to be the insulator 2 at a temperature of 850 to 950 ° C. .

The outer conductor 1 and the center conductor 3 are formed on the insulator 2 by forming an oxide film on the surface thereof.
Good bonding, usually at a temperature of 500-600
The substrate is oxidized in an oxidizing atmosphere at 10 ° C. for 10 to 20 minutes, and an oxide film having a thickness of 1 to 5 μm is formed on the surface thereof.

The outer conductor 1 and the center conductor 3 are coated with a metal such as nickel or gold having good conductivity, good corrosion resistance and good wettability with the brazing material by plating.
If the outer conductor 1 and the center conductor 3 are adhered in a thickness of 20 μm, oxidation corrosion of the outer conductor 1 and the center conductor 3 can be effectively prevented.
Good electrical connection between the device and an external electronic device. Therefore, in order to prevent the outer conductor 1 and the center conductor 3 from being oxidized and corroded, and to improve the brazing between the outer conductor 1 and the package and the electrical connection between the center conductor 3 and an external electronic device, the outer conductor 1 and the center conductor 3 are required. It is preferable that nickel, gold, or the like is applied to the exposed surface of the central conductor 3 to a thickness of 1 to 20 μm by plating.

When the amount of silicon oxide is less than 55% by weight, the insulator 2 for joining and sealing the outer conductor 1 and the center conductor 3 deteriorates the chemical resistance of the glass, and the reliability of hermetic sealing is reduced. On the other hand, if it exceeds 65% by weight, the softening and melting temperature of the glass becomes high, and the oxidation of the outer conductor 1 and the center conductor 3 proceeds in the assembly process of the high-frequency connector 4 so that the high-frequency connector 4 Tends to decrease in strength.
Therefore, the amount of silicon oxide is preferably in the range of 55-65% by weight.

On the other hand, if the amount of boron oxide is less than 18% by weight, the softening and melting temperature of the glass becomes high, and the oxidation of the outer conductor 1 and the center conductor 3 proceeds in the assembly process of the high-frequency connector 4 so that the high-frequency connector 4 When the content exceeds 28% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing tends to decrease significantly. Therefore, the amount of boron oxide is preferably in the range of 18-28% by weight.

If the amount of sodium oxide is less than 4% by weight, the softening and melting temperature of the glass increases, and the oxidation of the outer conductor 1 and the center conductor 3 progresses in the process of assembling the high-frequency connector 4, thereby increasing the strength of the high-frequency connector 4. On the other hand, if it exceeds 10% by weight, the chemical resistance of the glass tends to deteriorate, and the reliability of hermetic sealing tends to decrease.
Therefore, the amount of sodium oxide is preferably in the range of 4 to 10% by weight.

If the amount of aluminum oxide is less than 2% by weight, the chemical resistance of the glass tends to decrease, and the reliability of hermetic sealing tends to decrease. As the softening and melting temperature increases, the high-frequency connector 4
In the assembling process, the oxidation of the outer conductor 1 and the center conductor 3 proceeds, and the strength of the high-frequency connector 4 tends to decrease. Therefore, the amount of aluminum oxide is 2 to 8% by weight.
Is preferably within the range.

If the amount of potassium oxide is less than 1% by weight, the softening and melting temperature of the glass becomes high,
During the assembly process, the outer conductor 1 and the center conductor 3 tend to be oxidized, and the strength of the high-frequency connector 4 tends to decrease. On the other hand, if it exceeds 6% by weight, the chemical resistance of the glass decreases, The reliability of hermetic sealing tends to decrease.
Therefore, the amount of potassium oxide is preferably in the range of 1 to 6% by weight.

If the amount of lithium oxide is less than 1% by weight, the softening and melting temperature of the glass increases, and the high frequency connector 4
In the assembling process, the oxidation of the outer conductor 1 and the center conductor 3 tends to progress, and the strength of the high-frequency connector 4 tends to decrease. On the other hand, if it exceeds 6% by weight, the chemical resistance of the glass deteriorates, The reliability of hermetic sealing tends to decrease.
Therefore, the amount of lithium oxide is preferably in the range of 1 to 6% by weight.

If the amount of barium oxide is less than 0.5% by weight, the softening and melting temperature of the glass increases, and the oxidation of the outer conductor 1 and the center conductor 3 progresses in the assembly process of the high-frequency connector 4 so that the strength of the high-frequency connector 4 is increased. On the other hand, if it exceeds 3% by weight, the chemical resistance of the glass tends to deteriorate, and the reliability of hermetic sealing tends to decrease.
Therefore, the amount of barium oxide is preferably in the range of 0.5 to 3% by weight.

Thus, according to the high-frequency connector 4 described above, the outer conductor 3 and the center conductor 1 are connected with 55 to 65% by weight of silicon oxide, 18 to 28% by weight of boron oxide, 4 to 10% by weight of sodium oxide, and 2 to 10% by weight of aluminum oxide. 8% by weight, potassium oxide 1
By bonding and sealing with an insulator 2 composed of 〜6 wt%, lithium oxide 1１〜6 wt%, and barium oxide 0.5３3 wt%, a high-frequency connector with good hermetic sealing can be obtained.

The present invention is not limited to the above-described embodiment. For example, in the above-described example, the outer conductor 1 and the center conductor 3 are made of a Fe—Ni—Co alloy as a material. A Ni-based alloy or an Fe-Co-based alloy may be used.

[0031]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to evaluate the characteristics of the high-frequency connector of the present invention, an outer conductor 1, an insulator 2, and a center conductor 3 were manufactured using materials having various average linear thermal expansion coefficients at 25 to 450 ° C. Connector. The size of the outer conductor 1, the insulator 2, and the center conductor 3 is such that the outer conductor 1 has an outer diameter of 1.93 m.
m, inner diameter 1.63 mm, length 1.4 mm, insulator 2 is outer diameter
1.63 mm, inner diameter 0.3 mm, length 1.4 mm, center conductor 3 was 0.3 mm in diameter and 3.18 mm in length.

In the evaluation of the characteristics, the occurrence rate of cracks in the insulator 1 after the temperature cycle test was evaluated. The temperature cycle test was performed in a constant temperature bath at -60 ° C and 150 ° C for 10 minutes each, and this was performed as one cycle under the condition of 100 cycles. After the test, the insulator 1 was visually inspected for cracks. It was confirmed.

Table 1 shows the results of the temperature cycle test, in which 25 to 45 of the outer conductor 1, the insulator 2, and the center conductor 3 are shown.
In the high-frequency connector 4 of the present invention in which the difference in the average linear thermal expansion coefficient at 0 ° C. was 1 ppm / ° C. or less, no crack occurred in the insulator 2 and it was found that the high-frequency connector 4 had good hermetic sealing properties.

[0034]

[Table 1]

[0035]

According to the high frequency connector of the present invention, 25 to
Because the difference between the average linear thermal expansion coefficient of the center conductor and the insulator at 450 ° C was as small as 1 ppm / ° C or less,
When the outer conductor and the center conductor are joined by sandwiching an insulator made of glass between them, a large stress does not occur due to a difference in their respective thermal expansion coefficients between the center conductor and the insulator. This effectively prevents cracks in the insulator, and as a result, provides a high-frequency connector with good vacuum tightness.

According to the high frequency connector of the present invention,
55-65% by weight of silicon oxide, 18-28% by weight of boron oxide, 4-10% by weight of sodium oxide, 2-8% by weight of aluminum oxide, 1-6% by weight of potassium oxide, 1-6% by weight of lithium oxide And 0.5 to 3% by weight of barium oxide, so that the average thermal expansion coefficient of the insulator at 25 to 450 ° C. is about 4.6 ppm / ° C., and the outer conductor and the central conductor such as Fe—Ni—Co alloy forming the center conductor 25-450 of metal material
The difference from the average thermal expansion coefficient at ° C can be made within 1 ppm / ° C.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of an embodiment of a high-frequency connector according to the present invention.

[Explanation of symbols]

 1 outer conductor 2 insulator 3 center conductor 4 high-frequency connector

 ──────────────────────────────────────────────────続 き Continuing on the front page F term (reference) 4G062 AA08 BB05 CC01 DA06 DB03 DC04 DD01 DE01 DF01 EA03 EB03 EC03 ED01 EE01 EF01 EG02 EG03 FA01 FA10 FB01 FC01 FD01 FE01 FF01 FG01 FH01 FJ01 FK01 FL01 GA01 GB01 HH05 HH07 HH09 HH11 HH13 HH15 HH17 HH20 JJ01 JJ03 JJ05 JJ07 JJ10 KK01 KK03 KK05 KK07 KK10 MM08 MM27 NN32 5E063 HB02 HB03 XA02 XA03 XA04 5E086 PP02 PP14 PP17 Q19PP24 Q17

Claims (2)

[Claims] 1. An insulator having a cylindrical outer conductor, a through-hole substantially in parallel to an axial direction of the outer conductor, insulated and insulated from an inner peripheral surface of the outer conductor, A high-frequency connector comprising a rod-shaped center conductor which is inserted and whose both ends protrude from the insulator and are hermetically bonded to each other;
The average linear thermal expansion coefficients at 50 ° C. are α1 and α2, respectively.
And α3 ppm / ° C., α2 <α3 ≦ α
1, and α3-α2 ≦ 1 ppm / ° C. 2. The insulator comprises 55 to 65% by weight of silicon oxide, 18 to 28% by weight of boron oxide, and 4 to 50% by weight of sodium oxide.
2. The high-frequency wave according to claim 1, comprising 10% by weight, 2 to 8% by weight of aluminum oxide, 1 to 6% by weight of potassium oxide, 1 to 6% by weight of lithium oxide and 0.5 to 3% by weight of barium oxide. connector.