JP2001267309A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus where film forming speed, uniformity of film thickness in a substrate face and the uniformity of film thickness, between substrates which are laminated on upper/lower parts, can be improved. SOLUTION: A reaction pipe 2 is installed in a heater 20, and a boat 4 is arranged in the reaction pipe 2. Plural wafers 3 are vertically stacked on the boat 4. A nozzle 5 with gas jet ports 6 are made by adjusting them to a wafer pitch and a nozzle 7 which is formed into a U shape, to which a gas is introduced from one auxiliary nozzle 71 and in which gas jet ports 8 are made on the other auxiliary nozzle 72 by adjusting them to the wafer pitch are used. The nozzles 5 and 7 are fitted to an inlet adapter 9, and a raw gas is supplied to the wafer 3 in the horizontal direction. The raw gas is made to flow from a lower side through the nozzle 5 and is made to flow from an upper side through the nozzle 7 and gas is supplied to the wafers 3 in the horizontal direction. Thus, film formation rate, the uniformity of film thickness in a wafer face and uniformity of film thickness between the wafers 3 which are laminated on upper/lower parts are improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a vertical CVD apparatus which is one of semiconductor manufacturing apparatuses, which has a film forming speed, a uniform film thickness on a wafer surface, and a vertical lamination. The present invention relates to a semiconductor manufacturing apparatus having a reaction chamber structure capable of improving the film thickness uniformity between wafers.

[0002]

2. Description of the Related Art In a conventional vertical CVD apparatus, as shown in FIG. 4, a reaction tube 2 is provided inside a heater 20, and an inner reaction tube 22 having an open upper and lower portion is provided in the reaction tube 2. The boat 4 is installed in the inner reaction tube 22, a plurality of semiconductor wafers 3 (hereinafter, referred to as wafers) are vertically stacked on the boat 4, and a raw material gas is supplied from an inlet adapter 21 provided below. , The inflowing gas is raised in the inner reaction tube 22, and then the inner reaction tube 22 and the reaction tube 2
Between the outlet adapter 2 and
3 was discharged.

Therefore, there is a problem that the raw material gas is difficult to be supplied to the central portion of the wafer 3, the thickness of the central portion of the wafer is small, the thickness of the peripheral portion of the wafer is large, and the thickness distribution on the wafer surface is poor. Was.

Further, since the gas flows in a direction perpendicular to the wafer 3, the amount of unreacted gas is large and the film forming speed is low.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a low film forming rate, a large amount of unreacted gas, and a low film forming rate because the source gas hardly flows to the center of the wafer, which is a problem of the prior art. The vertical type that can easily supply the source gas to the center of the wafer, improve the film thickness distribution in the wafer surface, increase the film formation rate, and suppress the unreacted gas An object of the present invention is to provide a semiconductor manufacturing apparatus such as a CVD apparatus.

[0006]

According to the present invention, there is provided a semiconductor manufacturing apparatus for vertically stacking and holding a plurality of substrates, comprising a nozzle for introducing a gas upward from below. A nozzle having a plurality of gas ejection ports for supplying a gas to a plurality of substrates, and a plurality of nozzles for introducing a gas from above to below, wherein the gas supplies gas to the plurality of substrates. And a nozzle having a gas ejection port is provided so as to be located on a side of the plurality of substrates.

[0007]

Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic longitudinal sectional view for explaining a vertical CVD apparatus according to an embodiment of the present invention,
2 and 3 are views for explaining nozzles used in a vertical CVD apparatus according to one embodiment of the present invention.

In order to flow the source gas uniformly from the top to the bottom, a nozzle 5 having gas outlets 6 opened in a straight tube as shown in FIG. 2 in accordance with the wafer pitch, and a U-shaped nozzle as shown in FIG. In this case, the nozzle 7 is used, in which gas is introduced from one of the sub-nozzles 71, and the other sub-nozzles 72 are provided with gas outlets 8 in accordance with the wafer pitch.

The above two types of nozzles 5 and 7 are attached to an inlet adapter 9 as shown in FIG. 1, and the source gas flows from the lower side by the nozzle 5 and the source gas flows from the upper side by the nozzle 7. Horizontally both nozzles 5,
7 to supply a source gas. Also, on the exhaust side,
A straight pipe is provided with a nozzle 10 having an exhaust hole 11 in accordance with the wafer pitch, and a straight pipe is provided with a nozzle 12 having an exhaust hole 13 in accordance with the wafer pitch. The lower end of the nozzle 10 is attached to an outlet adapter 14 provided on the lower side. The upper end of the nozzle 12 is attached to an outlet adapter 15 provided on the upper side, and air is exhausted from above and below. In the vertical CVD apparatus 1 according to the present embodiment, a reaction tube 2 is provided inside a heater 20, a boat 4 is installed in the reaction tube 2, and a plurality of wafers 3 are vertically placed on the boat 4. Laminated. The exhaust holes 11 and 13 are formed so as to be paired with the gas ejection ports 6 and 8.

In the present embodiment, in the vertical CVD apparatus 1, at least one pair of nozzles in which a nozzle 5 for introducing a source gas upward and a nozzle 7 for introducing a source gas downward are used in parallel is used. By supplying the gas to the wafer 3 in the horizontal direction, the film forming speed, the uniformity of the film thickness within the wafer surface, and the uniformity of the film thickness between the vertically stacked wafers are improved with the same gas supply amount as before. . Also, preferably, by adopting a structure including a nozzle 12 for exhausting from the upper direction and a nozzle 10 for exhausting from the lower direction, the film forming rate is the same as the conventional gas supply amount at the same gas supply amount. It is possible to further improve the uniformity of the film thickness in the wafer surface and the uniformity of the film thickness between the vertically stacked wafers.

Using the vertical CVD apparatus 1 of the present embodiment,
A semiconductor silicon wafer 3 having a diameter of 8 to 12 inches
150 sheets are stacked vertically, and several tens to several thousand P
a, SiH ₄ , PH ₃ as the source gas, nozzle 5,
7, a doped polysilicon film is formed on the wafer 3, and the semiconductor wafer 3 having a diameter of 8 to 12 inches is formed by using the vertical CVD apparatus 1 of the present embodiment.
0 to 150 sheets are stacked vertically, the inside of the reaction tube 2 is set to several tens to several thousands Pa, and SiH ₂ Cl ₂ and NH ₃ are supplied as source gases from the nozzles 5 and 7, and Si ₃ N _{4 is} placed on the wafer 3. When the film is formed, variations in gas flow rate and flow velocity between the upper and lower layers can be suppressed, the difference in film thickness between the vertically stacked wafers can be suppressed, and the film thickness uniformity can be improved to about ± 1%. Further, by supplying the raw material gas to the center of the wafer, the uniformity of the film thickness in the wafer surface can be improved from about ± 3% to about ± 1%, and the yield of semiconductor manufacturing can be improved. Further, by supplying the source gas to the central portion of the wafer, a film formation rate about 3 to 10 times that of the conventional technique can be obtained. As a result, the film formation time can be reduced to 1/3 to 1/10. By reducing the film time, the amount of source gas is reduced from 1/3 to 1 /
It was reduced to 10.

[0012]

According to the present invention, there is provided a semiconductor manufacturing apparatus capable of improving the film forming speed, the film thickness uniformity in the substrate surface, and the film thickness uniformity between substrates stacked vertically.

[Brief description of the drawings]

FIG. 1 is a schematic vertical sectional view for explaining a vertical CVD apparatus according to an embodiment of the present invention.

FIG. 2 is a view for explaining nozzles used in a vertical CVD apparatus according to one embodiment of the present invention.

FIG. 3 is a diagram for explaining nozzles used in a vertical CVD apparatus according to one embodiment of the present invention.

FIG. 4 is a schematic vertical sectional view for explaining a conventional vertical CVD apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Vertical CVD apparatus 2 ... Reaction tube 3 ... Semiconductor wafer 4 ... Boat 5, 7, 10, 12 ... Nozzle 6, 8 ... Gas ejection port 9, 21 ... Inlet adapter 11, 13 ... Exhaust hole 14, 15, 23 ... Outlet adapter 20 ... Heater 22 ... Inner reaction tube 71, 72 ... Sub nozzle

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA03 AA05 AA06 AA08 BA29 BA38 BB03 CA04 EA06 FA10 GA02 KA04 KA45 LA15 5F045 AB03 AB33 AC01 AC02 AC12 AC19 BB02 BB03 BB09 DP19 DQ05 EF03

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus for vertically stacking and holding a plurality of substrates, a nozzle for introducing a gas upward from below, and supplying a gas to the plurality of substrates. A nozzle having a plurality of gas jets to
A nozzle that introduces gas downward from above and has a plurality of gas ejection ports that supply gas to the plurality of substrates, such that the nozzles are located on the sides of the plurality of substrates. A semiconductor manufacturing apparatus provided in a semiconductor device.