JP2001267309A - Semiconductor manufacturing apparatus - Google Patents

Semiconductor manufacturing apparatus

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Publication number
JP2001267309A
JP2001267309A JP2000074647A JP2000074647A JP2001267309A JP 2001267309 A JP2001267309 A JP 2001267309A JP 2000074647 A JP2000074647 A JP 2000074647A JP 2000074647 A JP2000074647 A JP 2000074647A JP 2001267309 A JP2001267309 A JP 2001267309A
Authority
JP
Japan
Prior art keywords
gas
nozzle
wafer
film thickness
uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000074647A
Other languages
Japanese (ja)
Inventor
Tomoharu Shimada
智晴 島田
Toshimitsu Miyata
敏光 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2000074647A priority Critical patent/JP2001267309A/en
Publication of JP2001267309A publication Critical patent/JP2001267309A/en
Withdrawn legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus where film forming speed, uniformity of film thickness in a substrate face and the uniformity of film thickness, between substrates which are laminated on upper/lower parts, can be improved. SOLUTION: A reaction pipe 2 is installed in a heater 20, and a boat 4 is arranged in the reaction pipe 2. Plural wafers 3 are vertically stacked on the boat 4. A nozzle 5 with gas jet ports 6 are made by adjusting them to a wafer pitch and a nozzle 7 which is formed into a U shape, to which a gas is introduced from one auxiliary nozzle 71 and in which gas jet ports 8 are made on the other auxiliary nozzle 72 by adjusting them to the wafer pitch are used. The nozzles 5 and 7 are fitted to an inlet adapter 9, and a raw gas is supplied to the wafer 3 in the horizontal direction. The raw gas is made to flow from a lower side through the nozzle 5 and is made to flow from an upper side through the nozzle 7 and gas is supplied to the wafers 3 in the horizontal direction. Thus, film formation rate, the uniformity of film thickness in a wafer face and uniformity of film thickness between the wafers 3 which are laminated on upper/lower parts are improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体製造装置に
関し、特に、半導体製造装置の1つである縦型CVD装
置において、成膜速度、ウエハ面内の膜厚均一性および
上下方向に積層されたウエハ間の膜厚均一性を向上させ
ることを可能にする反応室構造を備える半導体製造装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a vertical CVD apparatus which is one of semiconductor manufacturing apparatuses, which has a film forming speed, a uniform film thickness on a wafer surface, and a vertical lamination. The present invention relates to a semiconductor manufacturing apparatus having a reaction chamber structure capable of improving the film thickness uniformity between wafers.

【0002】[0002]

【従来の技術】従来の縦型CVD装置は、図4に示すよ
うに、ヒータ20の内部に反応管2を設け、この反応管
2内に上部および下部が開放された内側反応管22を設
け、内側反応管22内にボート4を設置し、ボート4に
複数枚の半導体ウエハ3(以下、ウエハという。)を垂
直方向に積層し、下部に設けられたインレットアダプタ
21より原料ガスを供給し、流入したガスを内側反応管
22内を上昇させ、その後、内側反応管22と反応管2
との間の間隙24を降下させ、アウトレットアダプタ2
3より排出する構造となっていた。
2. Description of the Related Art In a conventional vertical CVD apparatus, as shown in FIG. 4, a reaction tube 2 is provided inside a heater 20, and an inner reaction tube 22 having an open upper and lower portion is provided in the reaction tube 2. The boat 4 is installed in the inner reaction tube 22, a plurality of semiconductor wafers 3 (hereinafter, referred to as wafers) are vertically stacked on the boat 4, and a raw material gas is supplied from an inlet adapter 21 provided below. , The inflowing gas is raised in the inner reaction tube 22, and then the inner reaction tube 22 and the reaction tube 2
Between the outlet adapter 2 and
3 was discharged.

【0003】そのため、原料ガスはウエハ3の中心部ま
で供給されにくく、ウエハ中心部の膜厚が薄くウエハ外
周部の膜厚が厚くなり、ウエハ面内の膜厚分布が悪いと
いう問題点があった。
Therefore, there is a problem that the raw material gas is difficult to be supplied to the central portion of the wafer 3, the thickness of the central portion of the wafer is small, the thickness of the peripheral portion of the wafer is large, and the thickness distribution on the wafer surface is poor. Was.

【0004】さらには、ウエハ3に対し、ガスの流れる
方向が垂直であるため、未反応ガス量が多く、成膜速度
も遅いという問題点があった。
Further, since the gas flows in a direction perpendicular to the wafer 3, the amount of unreacted gas is large and the film forming speed is low.

【0005】[0005]

【発明が解決しようとする課題】本発明の目的は、従来
技術の問題点であるウエハ中心部まで原料ガスが回り込
みにくいため成膜速度が遅く、未反応ガス量が多く、成
膜速度も遅いということを解決し、ウエハ中心部まで容
易に原料ガスを供給してウエハ面内の膜厚分布の改善と
成膜速度の向上を可能にし、さらには未反応ガスの抑制
を可能にする縦型CVD装置等の半導体製造装置を提供
することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a low film forming rate, a large amount of unreacted gas, and a low film forming rate because the source gas hardly flows to the center of the wafer, which is a problem of the prior art. The vertical type that can easily supply the source gas to the center of the wafer, improve the film thickness distribution in the wafer surface, increase the film formation rate, and suppress the unreacted gas An object of the present invention is to provide a semiconductor manufacturing apparatus such as a CVD apparatus.

【0006】[0006]

【課題を解決するための手段】本発明によれば、複数枚
の基板を垂直方向に積層して保持する半導体製造装置で
あって、下方より上方に向かってガスを導入するノズル
であって前記複数枚の基板に対してガスを供給する複数
個のガス噴出口を有するノズルと、上方より下方に向か
ってガスを導入するノズルであって前記複数枚の基板に
対してガスを供給する複数個のガス噴出口を有するノズ
ルとが、前記複数枚の基板の側方に位置するように設け
られていることを特徴とする半導体製造装置が提供され
る。
According to the present invention, there is provided a semiconductor manufacturing apparatus for vertically stacking and holding a plurality of substrates, comprising a nozzle for introducing a gas upward from below. A nozzle having a plurality of gas ejection ports for supplying a gas to a plurality of substrates, and a plurality of nozzles for introducing a gas from above to below, wherein the gas supplies gas to the plurality of substrates. And a nozzle having a gas ejection port is provided so as to be located on a side of the plurality of substrates.

【0007】[0007]

【発明の実施の形態】次に、図面を参照して本発明の実
施の形態を説明する。図1は、本発明の一実施の形態の
縦型CVD装置を説明するための概略縦断面図であり、
図2、3は、本発明の一実施の形態の縦型CVD装置で
使用されるノズルを説明するための図である。
Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic longitudinal sectional view for explaining a vertical CVD apparatus according to an embodiment of the present invention,
2 and 3 are views for explaining nozzles used in a vertical CVD apparatus according to one embodiment of the present invention.

【0008】原料ガスを上から下まで、均一に流すため
に、図2に示すようなまっすぐな管にウエハピッチに合
わせガス噴出口6を開けたノズル5と、図3に示すよう
なU字状の形状にし、片側の副ノズル71よりガスを導
入しもう一方の副ノズル72にウエハピッチに合わせガ
ス噴出口8を開けたノズル7を使用する。
In order to flow the source gas uniformly from the top to the bottom, a nozzle 5 having gas outlets 6 opened in a straight tube as shown in FIG. 2 in accordance with the wafer pitch, and a U-shaped nozzle as shown in FIG. In this case, the nozzle 7 is used, in which gas is introduced from one of the sub-nozzles 71, and the other sub-nozzles 72 are provided with gas outlets 8 in accordance with the wafer pitch.

【0009】上記の2種類のノズル5、7を図1に示す
ようにインレットアダプタ9に取り付け、ノズル5によ
り下側から原料ガスを流し、ノズル7により上側から原
料ガスを流し、ウエハ3に対し水平方向に両ノズル5、
7より原料ガスを供給する。また、排気側においても、
まっすぐな管にウエハピッチに合わせ排気孔11を開け
たノズル10とまっすぐな管にウエハピッチに合わせ排
気孔13を開けたノズル12とを設け、ノズル10の下
端は下側に設けたアウトレットアダプタ14に取り付
け、ノズル12の上端は上側に設けたアウトレットアダ
プタ15に取り付け、上下より排気する。なお、本実施
の形態の縦型CVD装置1においては、ヒータ20の内
部に反応管2を設け、この反応管2内にボート4を設置
し、ボート4に複数枚のウエハ3を垂直方向に積層して
いる。また、排気孔11、13はガス噴出口6、8と対
になるように形成されている。
The above two types of nozzles 5 and 7 are attached to an inlet adapter 9 as shown in FIG. 1, and the source gas flows from the lower side by the nozzle 5 and the source gas flows from the upper side by the nozzle 7. Horizontally both nozzles 5,
7 to supply a source gas. Also, on the exhaust side,
A straight pipe is provided with a nozzle 10 having an exhaust hole 11 in accordance with the wafer pitch, and a straight pipe is provided with a nozzle 12 having an exhaust hole 13 in accordance with the wafer pitch. The lower end of the nozzle 10 is attached to an outlet adapter 14 provided on the lower side. The upper end of the nozzle 12 is attached to an outlet adapter 15 provided on the upper side, and air is exhausted from above and below. In the vertical CVD apparatus 1 according to the present embodiment, a reaction tube 2 is provided inside a heater 20, a boat 4 is installed in the reaction tube 2, and a plurality of wafers 3 are vertically placed on the boat 4. Laminated. The exhaust holes 11 and 13 are formed so as to be paired with the gas ejection ports 6 and 8.

【0010】本実施の形態においては、縦型CVD装置
1において、上方向に原料ガスを導入するノズル5と下
方向に原料ガスを導入するノズル7とを平行に配置した
ノズルペアを1組以上用いて、ウエハ3に対し水平方向
にガスを供給することにより、従来と同じガス供給量で
成膜速度、ウエハ面内の膜厚均一性および上下に積層し
たウエハ間の膜厚均一性を向上させる。また、好ましく
は、排気にも、上方向から排気するノズル12と下方向
から排気するノズル10とを備えた構造を取り入れるこ
とで、従来と同ガス供給量で同じガス供給量で成膜速
度、ウエハ面内の膜厚均一性および上下に積層したウエ
ハ間の膜厚均一性をさらに向上させることができる。
In the present embodiment, in the vertical CVD apparatus 1, at least one pair of nozzles in which a nozzle 5 for introducing a source gas upward and a nozzle 7 for introducing a source gas downward are used in parallel is used. By supplying the gas to the wafer 3 in the horizontal direction, the film forming speed, the uniformity of the film thickness within the wafer surface, and the uniformity of the film thickness between the vertically stacked wafers are improved with the same gas supply amount as before. . Also, preferably, by adopting a structure including a nozzle 12 for exhausting from the upper direction and a nozzle 10 for exhausting from the lower direction, the film forming rate is the same as the conventional gas supply amount at the same gas supply amount. It is possible to further improve the uniformity of the film thickness in the wafer surface and the uniformity of the film thickness between the vertically stacked wafers.

【0011】本実施の形態の縦型CVD装置1を用い、
直径8〜12インチの半導体シリコンウエハ3を50〜
150枚垂直方向に積層し、反応管2内を数十〜数千P
aにし、原料ガスとしてSiH、PHをノズル5、
7から供給し、ウエハ3上にドープトポリシリコン膜を
成膜し、また、本実施の形態の縦型CVD装置1を用
い、直径8〜12インチの半導体シリコンウエハ3を5
0〜150枚垂直方向に積層し、反応管2内を数十〜数
千Paにし、原料ガスとしてSiHCl、NH
ノズル5、7から供給し、ウエハ3上にSi膜を
成膜したところ、上下間のガス流量、流速のばらつきを
抑えることができ、上下に積層したウエハ間での膜厚の
差を抑制でき膜厚均一性を±1%程度に向上でき、ま
た、ウエハ中心部まで原料ガスを供給することで、ウエ
ハ面内の膜厚均一性を±3%程度から±1%程度まで向
上させることができ、半導体製造の歩留まりを向上でき
る。さらに、ウエハ中心部まで原料ガスを供給すること
で、従来の3〜10倍程度の成膜速度を得ることがで
き、その結果、成膜時間を1/3〜1/10に短縮で
き、成膜時間の短縮により、原料ガス量を1/3〜1/
10に低減できた。
Using the vertical CVD apparatus 1 of the present embodiment,
A semiconductor silicon wafer 3 having a diameter of 8 to 12 inches
150 sheets are stacked vertically, and several tens to several thousand P
a, SiH 4 , PH 3 as the source gas, nozzle 5,
7, a doped polysilicon film is formed on the wafer 3, and the semiconductor wafer 3 having a diameter of 8 to 12 inches is formed by using the vertical CVD apparatus 1 of the present embodiment.
0 to 150 sheets are stacked vertically, the inside of the reaction tube 2 is set to several tens to several thousands Pa, and SiH 2 Cl 2 and NH 3 are supplied as source gases from the nozzles 5 and 7, and Si 3 N 4 is placed on the wafer 3. When the film is formed, variations in gas flow rate and flow velocity between the upper and lower layers can be suppressed, the difference in film thickness between the vertically stacked wafers can be suppressed, and the film thickness uniformity can be improved to about ± 1%. Further, by supplying the raw material gas to the center of the wafer, the uniformity of the film thickness in the wafer surface can be improved from about ± 3% to about ± 1%, and the yield of semiconductor manufacturing can be improved. Further, by supplying the source gas to the central portion of the wafer, a film formation rate about 3 to 10 times that of the conventional technique can be obtained. As a result, the film formation time can be reduced to 1/3 to 1/10. By reducing the film time, the amount of source gas is reduced from 1/3 to 1 /
It was reduced to 10.

【0012】[0012]

【発明の効果】本発明によれば、成膜速度、基板面内の
膜厚均一性および上下に積層した基板間の膜厚均一性を
向上させることができる半導体製造装置が提供される。
According to the present invention, there is provided a semiconductor manufacturing apparatus capable of improving the film forming speed, the film thickness uniformity in the substrate surface, and the film thickness uniformity between substrates stacked vertically.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態の縦型CVD装置を説明
するための概略縦断面図である。
FIG. 1 is a schematic vertical sectional view for explaining a vertical CVD apparatus according to an embodiment of the present invention.

【図2】本発明の一実施の形態の縦型CVD装置で使用
されるノズルを説明するための図である。
FIG. 2 is a view for explaining nozzles used in a vertical CVD apparatus according to one embodiment of the present invention.

【図3】本発明の一実施の形態の縦型CVD装置で使用
されるノズルを説明するための図である。
FIG. 3 is a diagram for explaining nozzles used in a vertical CVD apparatus according to one embodiment of the present invention.

【図4】従来の縦型CVD装置を説明するための概略縦
断面図である。
FIG. 4 is a schematic vertical sectional view for explaining a conventional vertical CVD apparatus.

【符号の説明】[Explanation of symbols]

1…縦型CVD装置 2…反応管 3…半導体ウエハ 4…ボート 5、7、10、12…ノズル 6、8…ガス噴出口 9、21…インレットアダプタ 11、13…排気孔 14、15、23…アウトレットアダプタ 20…ヒータ 22…内側反応管 71、72…副ノズル DESCRIPTION OF SYMBOLS 1 ... Vertical CVD apparatus 2 ... Reaction tube 3 ... Semiconductor wafer 4 ... Boat 5, 7, 10, 12 ... Nozzle 6, 8 ... Gas ejection port 9, 21 ... Inlet adapter 11, 13 ... Exhaust hole 14, 15, 23 ... Outlet adapter 20 ... Heater 22 ... Inner reaction tube 71, 72 ... Sub nozzle

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4K030 AA03 AA05 AA06 AA08 BA29 BA38 BB03 CA04 EA06 FA10 GA02 KA04 KA45 LA15 5F045 AB03 AB33 AC01 AC02 AC12 AC19 BB02 BB03 BB09 DP19 DQ05 EF03  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA03 AA05 AA06 AA08 BA29 BA38 BB03 CA04 EA06 FA10 GA02 KA04 KA45 LA15 5F045 AB03 AB33 AC01 AC02 AC12 AC19 BB02 BB03 BB09 DP19 DQ05 EF03

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】複数枚の基板を垂直方向に積層して保持す
る半導体製造装置であって、下方より上方に向かってガ
スを導入するノズルであって前記複数枚の基板に対して
ガスを供給する複数個のガス噴出口を有するノズルと、
上方より下方に向かってガスを導入するノズルであって
前記複数枚の基板に対してガスを供給する複数個のガス
噴出口を有するノズルとが、前記複数枚の基板の側方に
位置するように設けられていることを特徴とする半導体
製造装置。
1. A semiconductor manufacturing apparatus for vertically stacking and holding a plurality of substrates, a nozzle for introducing a gas upward from below, and supplying a gas to the plurality of substrates. A nozzle having a plurality of gas jets to
A nozzle that introduces gas downward from above and has a plurality of gas ejection ports that supply gas to the plurality of substrates, such that the nozzles are located on the sides of the plurality of substrates. A semiconductor manufacturing apparatus provided in a semiconductor device.
JP2000074647A 2000-03-16 2000-03-16 Semiconductor manufacturing apparatus Withdrawn JP2001267309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000074647A JP2001267309A (en) 2000-03-16 2000-03-16 Semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000074647A JP2001267309A (en) 2000-03-16 2000-03-16 Semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JP2001267309A true JP2001267309A (en) 2001-09-28

Family

ID=18592656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000074647A Withdrawn JP2001267309A (en) 2000-03-16 2000-03-16 Semiconductor manufacturing apparatus

Country Status (1)

Country Link
JP (1) JP2001267309A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219125A (en) * 2009-03-13 2010-09-30 Tokyo Electron Ltd Film forming device
KR20150113822A (en) * 2014-03-31 2015-10-08 가부시끼가이샤 도시바 Gas supply pipe, and gas treatment equipment
US20160289833A1 (en) * 2015-03-31 2016-10-06 Tokyo Electron Limited Vertical Heat Treatment Apparatus
CN109943827A (en) * 2015-07-17 2019-06-28 株式会社国际电气 The manufacturing method of gas supply nozzle, substrate processing device and semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219125A (en) * 2009-03-13 2010-09-30 Tokyo Electron Ltd Film forming device
KR20150113822A (en) * 2014-03-31 2015-10-08 가부시끼가이샤 도시바 Gas supply pipe, and gas treatment equipment
KR101704897B1 (en) 2014-03-31 2017-02-08 가부시끼가이샤 도시바 Gas supply pipe, and gas treatment equipment
US20160289833A1 (en) * 2015-03-31 2016-10-06 Tokyo Electron Limited Vertical Heat Treatment Apparatus
CN109943827A (en) * 2015-07-17 2019-06-28 株式会社国际电气 The manufacturing method of gas supply nozzle, substrate processing device and semiconductor devices
CN109943827B (en) * 2015-07-17 2022-03-22 株式会社国际电气 Gas supply nozzle, substrate processing apparatus, and method for manufacturing semiconductor device

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A300 Withdrawal of application because of no request for examination

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Effective date: 20070605