JP2001255661A - パルス光パターン書込み装置 - Google Patents

パルス光パターン書込み装置

Info

Publication number
JP2001255661A
JP2001255661A JP2000401896A JP2000401896A JP2001255661A JP 2001255661 A JP2001255661 A JP 2001255661A JP 2000401896 A JP2000401896 A JP 2000401896A JP 2000401896 A JP2000401896 A JP 2000401896A JP 2001255661 A JP2001255661 A JP 2001255661A
Authority
JP
Japan
Prior art keywords
pulse
repetition rate
laser
modulator
pulse repetition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000401896A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001255661A5 (enExample
Inventor
Yigal Katzir
イガル カッツィール
Boris Kling
ボリス クリング
Avraham Gross
アヴラハム グロス
Wolfgang Retschke
ヴォルフガンク レツェッケ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orbotech Ltd
Original Assignee
Orbotech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IL133889A external-priority patent/IL133889A/en
Application filed by Orbotech Ltd filed Critical Orbotech Ltd
Publication of JP2001255661A publication Critical patent/JP2001255661A/ja
Publication of JP2001255661A5 publication Critical patent/JP2001255661A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Communication System (AREA)
  • Lasers (AREA)
JP2000401896A 2000-01-05 2000-12-28 パルス光パターン書込み装置 Pending JP2001255661A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US133889 1980-03-25
IL133889A IL133889A (en) 2000-01-05 2000-01-05 Pulse light pattern writer
US09/735.872 2000-12-13
US09/735,872 US7092000B2 (en) 2000-01-05 2000-12-13 Pulse light pattern writer

Publications (2)

Publication Number Publication Date
JP2001255661A true JP2001255661A (ja) 2001-09-21
JP2001255661A5 JP2001255661A5 (enExample) 2007-10-18

Family

ID=26323923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000401896A Pending JP2001255661A (ja) 2000-01-05 2000-12-28 パルス光パターン書込み装置

Country Status (2)

Country Link
EP (1) EP1115031A3 (enExample)
JP (1) JP2001255661A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006309187A (ja) * 2005-03-28 2006-11-09 Olympus Corp 光パルス多重化ユニット、それを用いた光パルス発生器、及び光パルス多重化方法
JP2008112985A (ja) * 2006-10-06 2008-05-15 Semiconductor Energy Lab Co Ltd 露光装置、および当該露光装置を用いた半導体装置の作製方法
WO2008090640A1 (ja) 2007-01-23 2008-07-31 Fujifilm Corporation オキシム化合物、感光性組成物、カラーフィルタ及びその製造方法、並びに液晶表示素子
JP2012502456A (ja) * 2008-09-03 2012-01-26 ライトラブ イメージング， インコーポレイテッド 波長調節可能光源
KR20130020559A (ko) * 2011-08-19 2013-02-27 레이저 이미징 시스템즈 게엠베하 ＆ 코. 카게 직접 이미징을 위한 시스템과 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1424598B1 (en) * 2002-11-27 2008-04-09 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
SG111171A1 (en) 2002-11-27 2005-05-30 Asml Netherlands Bv Lithographic projection apparatus and device manufacturing method
DE10307309B4 (de) 2003-02-20 2007-06-14 Hitachi Via Mechanics, Ltd., Ebina Vorrichtung und Verfahren zur Bearbeitung von elektrischen Schaltungssubstraten mittels Laser
US7626181B2 (en) 2005-12-09 2009-12-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7697115B2 (en) 2006-06-23 2010-04-13 Asml Holding N.V. Resonant scanning mirror

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447856A (en) * 1966-10-07 1969-06-03 Bell Telephone Labor Inc Optical pulse multiplier
JPS53101228A (en) * 1976-12-15 1978-09-04 Magyar Tudomanyos Akademia Laser operating device for recording data and signal
JPH04257131A (ja) * 1991-02-12 1992-09-11 Nippon Telegr & Teleph Corp <Ntt> 超短光パルス変調回路
GB2245790B (en) * 1990-07-03 1994-06-01 Stc Plc Optical transmitter
JPH06235944A (ja) * 1993-02-08 1994-08-23 Dainippon Screen Mfg Co Ltd 光ビーム走査方法
JPH06317772A (ja) * 1992-05-12 1994-11-15 Orbotech Ltd レーザ表示装置
JPH1026831A (ja) * 1996-03-14 1998-01-27 Agfa Gevaert Nv 単一スポツトマルチビームレーザ記録によるハーフトーン再生
WO1998027450A1 (en) * 1996-12-18 1998-06-25 Etec Systems, Inc. Short wavelength pulsed laser scanner
JPH11305710A (ja) * 1998-04-20 1999-11-05 Sony Corp 光の変調方法及びその装置、並びに、画像投影方法及びその装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783356A (en) * 1996-04-17 1998-07-21 Agfa-Gevaert, N.V. Halftone reproduction by single spot multibeam laser recording
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447856A (en) * 1966-10-07 1969-06-03 Bell Telephone Labor Inc Optical pulse multiplier
JPS53101228A (en) * 1976-12-15 1978-09-04 Magyar Tudomanyos Akademia Laser operating device for recording data and signal
GB2245790B (en) * 1990-07-03 1994-06-01 Stc Plc Optical transmitter
JPH04257131A (ja) * 1991-02-12 1992-09-11 Nippon Telegr & Teleph Corp <Ntt> 超短光パルス変調回路
JPH06317772A (ja) * 1992-05-12 1994-11-15 Orbotech Ltd レーザ表示装置
JPH06235944A (ja) * 1993-02-08 1994-08-23 Dainippon Screen Mfg Co Ltd 光ビーム走査方法
JPH1026831A (ja) * 1996-03-14 1998-01-27 Agfa Gevaert Nv 単一スポツトマルチビームレーザ記録によるハーフトーン再生
WO1998027450A1 (en) * 1996-12-18 1998-06-25 Etec Systems, Inc. Short wavelength pulsed laser scanner
JPH11305710A (ja) * 1998-04-20 1999-11-05 Sony Corp 光の変調方法及びその装置、並びに、画像投影方法及びその装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006309187A (ja) * 2005-03-28 2006-11-09 Olympus Corp 光パルス多重化ユニット、それを用いた光パルス発生器、及び光パルス多重化方法
JP2008112985A (ja) * 2006-10-06 2008-05-15 Semiconductor Energy Lab Co Ltd 露光装置、および当該露光装置を用いた半導体装置の作製方法
WO2008090640A1 (ja) 2007-01-23 2008-07-31 Fujifilm Corporation オキシム化合物、感光性組成物、カラーフィルタ及びその製造方法、並びに液晶表示素子
JP2012502456A (ja) * 2008-09-03 2012-01-26 ライトラブ イメージング， インコーポレイテッド 波長調節可能光源
KR20130020559A (ko) * 2011-08-19 2013-02-27 레이저 이미징 시스템즈 게엠베하 ＆ 코. 카게 직접 이미징을 위한 시스템과 방법
KR101983857B1 (ko) * 2011-08-19 2019-05-29 오르보테크 엘티디. 직접 이미징을 위한 시스템과 방법

Also Published As

Publication number Publication date
EP1115031A2 (en) 2001-07-11
EP1115031A3 (en) 2004-12-15

Similar Documents

Publication Publication Date Title
US7453486B2 (en) Pulse light pattern writer
US6275514B1 (en) Laser repetition rate multiplier
US7092000B2 (en) Pulse light pattern writer
JP4694768B2 (ja) 直接パターンライター
CN102955252B (zh) 用于直接成像的系统和方法
US8144307B2 (en) Image forming method and apparatus
JP7120243B2 (ja) パターン描画装置
JP2001255661A (ja) パルス光パターン書込み装置
US8687662B2 (en) Pulsed laser source with high repetition rate
US6658315B2 (en) Non-synchronous control of pulsed light
TW447180B (en) Pulse light pattern writer
JP4541010B2 (ja) パターン露光装置および二次元光像発生装置
CN116569093A (zh) 图案曝光装置以及图案曝光方法
JP2005275097A (ja) 画像露光装置および画像露光方法
JPH0743626A (ja) 画像走査記録装置及び画像走査記録用レーザ露光方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070831

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070831

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100222

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100513

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100518

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100621

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100624

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100716

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100722

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100818

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101021

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110111

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110114

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110208

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110214

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110309

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110314

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110420

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110516

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110915

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110928

A912 Removal of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20111021

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121130

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121205

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121227

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130107

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130130

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130204