JP2001255603A - Laser beam exposure device, and method and device for modulating wavelength of laser beam - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laser beam exposure device easily optically adjusted, restraining the loss of light quantity and preventing density fluctuation caused by interference irregularity. SOLUTION: This laser beam exposure device performs exposure by irradiating photosensitive material F having at least one photosensitive layer or supporting body layer transmissible or semi-transmissible to wavelength to be used with laser beams from laser beam sources 125 and 127. A beam irradiation area consisting of one scanning line or plural continuous scanning lines irradiated with the laser beam is set as one linear area, and the light quantity distribution ratio of the irradiating laser beam is changed between the adjacent linear areas. Then, it is conceivable that a beam irradiation area surrounded by one or plural pixels irradiated with the laser beam is set as one pixel area and the light quantity distribution ratio of the irradiating laser beam is changed between the adjacent pixels. It is also conceivable to change the temperature of the laser element of the laser beam source performing irradiation between the linear area and the linear area adjacent thereto or between the pixel area and the pixel area adjacent thereto.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser beam exposure apparatus for irradiating a photosensitive material such as a silver halide photosensitive material with a laser beam to form an image on a laser beam, and a method and apparatus for modulating a laser beam wavelength. The present invention relates to a laser beam exposure apparatus capable of suppressing image unevenness due to laser interference in a photosensitive material.

[0002]

2. Description of the Related Art Hitherto, a silver halide photographic material has been exposed to laser light in order to record an image based on image data. In recent years, a silver halide photothermographic material which does not require a liquid treatment and can visualize an image by thermal development has appeared. However, when this is exposed with a laser beam, interference fringes may occur and image unevenness may occur. This phenomenon will be described with reference to FIG. 12, which is a conceptual diagram showing the relationship between the cross section of the film and the laser beam.

As shown in FIG. 12A, when a laser beam is incident on a film F composed of a photosensitive layer of a silver halide photothermographic material and a support such as PET from a front surface F1, a laser beam is applied to a back surface F2. The portion reflects and returns to the surface F1, so that between the light B1 directly irradiating the recording layer and the light B2 reflected on the F2 surface of the light transmitted through the photosensitive layer and further reflected on the F1 surface. Interference occurs. For this reason, the amount of light applied to the photosensitive layer varies depending on the thickness of the film, and as a result, the exposure amount of the photosensitive material of the silver halide heat-developable photosensitive material to the photosensitive layer fluctuates, causing density unevenness.

The light B1 directly applied to the photosensitive layer and F2
B2 irradiating the recording layer after being reflected by the surface F1
When the optical path difference δ is an integral multiple of the laser wavelength, the amount of light irradiated to the photosensitive layer becomes maximum, and when the optical path difference δ deviates from the integral multiple by a half wavelength, it becomes minimum. The reflectance R at the interface between media having different refractive indices is represented by n which is the refractive index of each medium sandwiching this interface.
A and nB can be represented by the following equation (1).

R = ((nB−nA) / (nB + nA)) ² (1)

Here, for example, the refractive index of each layer of the photosensitive material is the same and uniform, and nB = 1 (air) and nA = 1.5.
(Photosensitive material), the reflectance R at the interface between the air and the photosensitive material is 4%. Further, the change in light amount (peak-to-peak) ΔA due to interference can be expressed by the following equation (2), and in the above case, it is as large as 16%.

ΔA = 4R (2)

Actually, as shown in FIG. 12B, a laser beam absorbing layer is provided on the back surface F2 side of the support.
Further, since the scattered light s is generated by the silver halide particles contained in the photosensitive layer, the change in the amount of light due to interference is smaller than the above value. However, if there is a slight difference in the refractive index between the absorption layer and the support, reflection occurs at the interface F2 between the absorption layer and the support, and the absorption layer does not contribute. Further, conventional photosensitive materials contain large silver halide grains and can be provided with a plurality of absorption layers, so that interference fringes are unlikely to occur. Silver halide grains are finer than the material, scattering in the photosensitive layer is much less than conventional films,
In the case of a heat development material having a high γ of 2 or more, the interference fringes become remarkable.

The above-mentioned fluctuations in light amount due to interference can be prevented by the following measures (1) to (3). (1) An antireflection film is provided on the back surface (F2) of the support to reduce the reflectance on the surface F2 between the support and the absorbing layer. (2) The thickness variation of the support is suppressed to a fraction of the wavelength of the laser beam (generally, 0.5 μm to 1.5 μm). (3) The difference in refractive index between the support and the absorption layer is reduced, and the reflectance at the interface F2 between the support and the absorption layer is reduced.

However, the countermeasure (1) leads to an increase in cost, which is not preferable. Regarding the measure (2), it is possible to suppress the dispersion of the medium having a thickness of several μm,
It is almost impossible to suppress the variation of the medium having a thickness of μm or more to sub μm or less. Further, with respect to the measure (3), even if the difference in refractive index is as small as 0.05 or less, interference fringes will be caused, and it is almost impossible to make the difference in refractive index between the two smaller than this level.

Further, Japanese Patent Application Laid-Open No. 11-48523 discloses that a recording material is irradiated with light from laser light sources having different wavelengths in a superimposed manner in order to prevent the occurrence of interference fringes. However, in this case, two or more laser light sources are necessarily required, and the laser beam itself is a beam in which interference is suppressed. Therefore, it is necessary that two laser beams overlap and coincide in the main scanning direction and the sub-scanning direction. Therefore, optical adjustment of the laser light source and the optical system becomes difficult, and the efficiency of the optical adjustment at the time of manufacturing and maintenance is reduced. Furthermore, a shift between two beams is likely to occur due to a change over time or an environmental change. If a shift occurs between the beams, interference unevenness is not sufficiently suppressed, and the beam diameter also changes, resulting in blurring, sharpness reduction, etc. Image quality is likely to deteriorate.

[0012]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in the prior art, and has been made in view of the above-mentioned problems. An object of the present invention is to provide an exposure apparatus.

[0013]

In order to achieve the above-mentioned object, a laser beam exposure apparatus according to the present invention has at least one support layer or photosensitive layer which is transparent or semi-transparent to the wavelength used. A laser beam exposure apparatus for irradiating a photosensitive material with a laser beam from a laser light source and exposing the same to one scanning line or a plurality of continuous scanning lines irradiated by the laser beam. It is defined as a linear region, and the light distribution ratio of the laser beam to be irradiated is changed between the adjacent linear regions.

Further, another laser beam exposure apparatus according to the present invention provides a laser beam exposure apparatus for a photosensitive material having at least one support layer or photosensitive layer which is transmissive or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus for irradiating a laser beam, wherein a beam irradiation area surrounded by one or a plurality of pixels for irradiating the laser beam is defined as one pixel area, and the laser beam is irradiated between adjacent pixels. Is characterized by changing the light distribution ratio of the light.

[0015] Still another laser beam exposure apparatus according to the present invention is a laser light exposure apparatus for a photosensitive material having at least one support layer or photosensitive layer that is transmissive or translucent to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, wherein a beam irradiation area formed by one scanning line or a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, The temperature of a laser element of the laser light source for irradiation is changed between the linear regions to be irradiated.

[0016] Still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, comprising: a photosensitive material having at least one support layer or photosensitive layer that is transparent or translucent to the wavelength to be used; A laser beam exposure apparatus for irradiating and exposing a beam, wherein a beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam is defined as one pixel area, and a pixel irradiation area is defined between adjacent pixel areas. The temperature of a laser element of the laser light source that performs irradiation is changed.

According to the above-described laser beam exposure apparatus, in the linear region or the pixel region, the beam interferes with each scanning line or each pixel, and there is interference unevenness in micro space.
The wavelength distribution of the laser beam can be changed by changing the light distribution ratio of the irradiation beam or by changing the temperature of the laser element of the laser light source between adjacent linear regions or pixel regions. Becomes invisible.
Thereby, the quality of the formed image is improved. Also,
Since it is not necessary to make two laser beams coincide with each other as in the related art, it is possible to at least correct a beam shift in the main scanning direction, and optical adjustment and maintenance become easy. As a method of correcting the beam position shift in the main scanning direction, a synchronous sensor signal that determines the writing start timing of each scanning line is used, and the writing start timing of each scanning line is shifted by the beam position shift in the main scanning direction of each scanning line. Can be corrected. In addition, two laser light sources are not always necessary as in the conventional case, and even one laser light source can be realized. In this case, there is no problem of a shift between the two laser beams even with a change with time or an environmental change. Interference unevenness is suppressed, and good image formation can be stably performed.

In the case of a laser diode for changing the light quantity distribution ratio of the irradiation beam, the wavelength can be changed only by modulating the operating current, so that the configuration is not complicated and the temperature control is unnecessary. . Thereby, high-speed modulation is possible in the laser beam exposure apparatus, and cost reduction can be achieved with a simple configuration.

Further, when the beam irradiation area is set in pixel units,
The macro space region in which the interference unevenness can be made invisible can be made narrower than the scanning line unit. For this reason, even if the macro space region is enlarged, the interference unevenness can be sufficiently invisible.

Further, according to the configuration in which the temperature of the laser element of the laser light source is changed, only one laser light source is required and the configuration is optically simple. Thus, the laser beam exposure apparatus can have a simple configuration, and cost reduction can be achieved.

Further, the pattern of the light amount distribution ratio of the laser beam can be made regular or random.

Further, the linear region and the adjacent linear region, or the pixel region and the adjacent pixel region are regions in which interference unevenness is invisible.

Further, since the number of the laser light sources is one, it has an optically simple structure, the optical adjustment at the time of manufacturing and maintenance is easy, the cost is advantageous, and the wavelength of the plurality of laser light sources is large. Sorting is not required.
In this case, it is preferable that the one laser light source irradiates the photosensitive material while switching the light amount distribution ratio between the adjacent linear regions.

When there are a plurality of laser light sources,
Correction is possible even if the laser beam is shifted in the main scanning direction,
The laser beams in the main scanning direction do not necessarily have to match. As a method of correcting the beam position shift in the main scanning direction,
The correction can be made by shifting the write start timing for each scanning line by the amount of the beam position shift in the main scanning direction of each scanning line using a synchronous sensor signal that determines the write start timing for each scanning line. For this reason, optical adjustment at the time of manufacture and maintenance is relatively easy, and it is advantageous in terms of cost. In this case, it is preferable to irradiate the photosensitive material with the plurality of laser light sources having different light amount distribution ratios switched between the adjacent linear regions. Thus, when there are a plurality of laser light sources, the maximum light amount can be held by changing the light amount distribution ratio when the laser beam is equal to or less than a predetermined light amount. When the light amount is equal to or less than the predetermined light amount, the problem of interference unevenness hardly occurs in a density range where the light amount is close to the maximum light amount.
Desirably, about 50% is preferable.

Further, as the photosensitive material, a material which easily interferes can be used, and when the material and configuration of the photosensitive material are determined, the range of choices is widened and is preferable.

By exposing the photosensitive material while modulating the temperature of the laser element over a predetermined range, substantially vertical incidence is possible, and interference unevenness occurs microscopically, but modulation is performed at a high spatial frequency. This makes it possible to achieve non-visualization of interference unevenness. Preferably, the modulation is performed for each of the linear regions.

It is preferable that a temperature control member is directly connected to the laser element, so that the speed of temperature control can be increased.

The modulation can be performed by injecting a light beam for temperature modulation having a different wavelength from that of the light source into the laser element and modulating the light amount of the light beam. According to this, the speed of temperature control can be increased, and this can be achieved at low cost.

Further, the modulation may be a random temperature modulation, and the modulation may be a modulation between binary temperatures at which an interference pattern is reversed. As a result, nearly vertical incidence is possible, and interference unevenness occurs microscopically, but modulation is performed at a high spatial frequency, so that interference unevenness can be made invisible.

[0030] Still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, comprising: a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive to a wavelength to be used; A laser beam exposure apparatus for irradiating and exposing a beam, wherein when the photosensitive material has optical anisotropy, the polarization state of the irradiation laser beam is controlled according to the optical anisotropy. I do.

According to this, it is possible to suppress interference unevenness caused by the optical anisotropy of the support of the photosensitive material.

Further, still another laser beam exposure apparatus according to the present invention provides a laser beam exposure apparatus for a photosensitive material having at least one support layer or photosensitive layer which is transmissive or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus that irradiates and exposes a beam, and when the photosensitive material has optical anisotropy, controls the polarization state of the irradiation laser beam according to the optical anisotropy,
A beam irradiation area composed of one scanning line or a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, and the light amount of the laser beam to be irradiated between adjacent linear regions. It is characterized in that the distribution ratio is changed.

[0033] Still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, comprising: a photosensitive material having at least one support layer or photosensitive layer that is transmissive or translucent to a wavelength to be used; A laser beam exposure apparatus that irradiates and exposes a beam, and when the photosensitive material has optical anisotropy, controls the polarization state of the irradiation laser beam according to the optical anisotropy,
A beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam is defined as one pixel area, and a light amount distribution ratio of a laser beam to be irradiated is changed between the adjacent pixel areas. And

[0034] Still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, comprising: a photosensitive material having at least one support layer or photosensitive layer that is transparent or semi-transmissive to a wavelength to be used; A laser beam exposure apparatus that irradiates and exposes a beam, and when the photosensitive material has optical anisotropy, controls the polarization state of the irradiation laser beam according to the optical anisotropy,
The laser light source for irradiating between one adjacent linear area and defining a single irradiation area irradiated by the laser beam or a beam irradiation area including a plurality of continuous scanning lines as one linear area. The temperature of the laser element is changed.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, which comprises a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus that irradiates and exposes a beam, and when the photosensitive material has optical anisotropy, controls the polarization state of the irradiation laser beam according to the optical anisotropy,
One pixel area irradiated by the laser beam or a beam irradiation area composed of a plurality of continuous pixels is defined as one pixel area, and the temperature of a laser element of the laser light source for irradiation is changed between adjacent pixel areas. It is characterized by the following.

According to the above-described laser beam exposure apparatus, even if the photosensitive material has optical anisotropy, the polarization state of the irradiation laser beam is controlled in accordance with the optical anisotropy and the adjacent linear region is controlled. Since the light beam distribution ratio of the irradiation beam or the temperature of the laser element of the laser light source is changed between the adjacent pixel areas or between adjacent pixel areas, the wavelength of the laser beam can be changed. Becomes invisible. Thereby, it is possible to suppress the interference unevenness due to the thickness variation of the photosensitive material and the interference unevenness due to the optical anisotropy.

In the case where there are two laser light sources, it is preferable to control the polarization state after combining two linearly polarized laser beams with a polarization beam splitter.

[0038] Still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, comprising: a photosensitive material having at least one support layer or photosensitive layer that is transmissive or translucent to the wavelength to be used; A laser beam exposure apparatus for irradiating and exposing a beam, wherein a beam irradiation area formed by one scanning line or a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, The light distribution ratio of the laser beam to be irradiated is changed between the linear regions.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus which comprises a photosensitive material having at least one support layer or photosensitive layer which is transparent or semi-transparent to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, wherein a beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam is defined as one pixel area, and a pixel irradiation area is defined between adjacent pixel areas. It is characterized in that the light amount distribution ratio of the laser beam to be irradiated is changed.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus which comprises a photosensitive material having at least one support layer or photosensitive layer which is transmissive or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, irradiating the photosensitive material with the polarization state of the laser beam being circularly polarized, and irradiating one scanning line or a plurality of continuous lines irradiated with the laser beam. Is defined as one linear region, and the temperature of a laser element of the laser light source that performs irradiation is changed between adjacent linear regions.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus which comprises a photosensitive material having at least one support layer or photosensitive layer which is transparent or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus for irradiating and irradiating a beam with a laser beam, irradiating the photosensitive material with the polarization state of the laser beam as circularly polarized light, and comprising one pixel or a plurality of continuous pixels irradiated by the laser beam. A beam irradiation area is defined as one pixel area, and the temperature of a laser element of the laser light source that performs irradiation is changed between adjacent pixel areas.

According to the above-described laser beam exposure apparatus, it is possible to suppress interference unevenness due to a variation in the thickness of the photosensitive material,
Interference unevenness due to optical anisotropy can be sufficiently suppressed irrespective of the direction of the axis of optical anisotropy.

In this case, when there are two laser light sources,
After the two linearly polarized laser beams are combined by the polarization beam splitter, the polarization state is preferably changed to circular polarization.

In order to change the polarization state to circularly polarized light, a λ / 4 wavelength plate through which the laser beam is transmitted immediately after the multiplexing is disposed, and a mirror disposed between the recording surface and the photosensitive material. Are preferably all dielectric film mirrors (not metal mirrors) so that the beam can be completely circularly polarized over the entire width of the recording surface of the photosensitive material.

In order to change the polarization state to circularly polarized light, a λ / 4 wavelength plate through which the laser beam is transmitted immediately after the multiplexing is arranged, and one of the leading mirrors up to the polygon metal mirror is a metal mirror. The other mirror is a dielectric film mirror, and the beam incident angle on the metal routing mirror is the same as the beam center incident angle on the polygon metal mirror, so that the degree of circular polarization near both ends of the recording surface of the photosensitive material is improved. Is slightly reduced, but in this case, a low-cost polygon metal mirror can be used, which is preferable. In order to change the polarization state to circular polarization, the beam emitted from the polygon mirror is in a linear polarization state parallel or perpendicular to the beam scanning direction, and the scanning direction is set between the polygon mirror and the recording surface of the photosensitive material. May be inserted.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, comprising: a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive to a wavelength to be used; A laser beam exposure apparatus for irradiating and exposing a beam, wherein the photosensitive material has optical anisotropy, and the direction of the axis of the optical anisotropy is constant, the linear polarization of the laser beam. The polarization direction is inclined by 45 degrees with respect to the axis of the optical anisotropy, and the beam irradiation area formed by one scanning line or a plurality of continuous scanning lines irradiated by the laser beam is set to one.
It is characterized in that one linear region is defined, and the light amount distribution ratio of the laser beam to be irradiated is changed between the adjacent linear regions.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, which comprises a photosensitive material having at least one support layer or photosensitive layer that is transparent or semi-transparent to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, wherein the photosensitive material has optical anisotropy, and the direction of the axis of the optical anisotropy is constant, the linear polarization of the laser beam. The direction of polarization is inclined by 45 degrees with respect to the axis of the optical anisotropy, and one pixel irradiated by the laser beam or a beam irradiation area composed of a plurality of continuous pixels is defined as one pixel area. The light distribution ratio of a laser beam to be irradiated is changed between the pixel areas.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, which comprises a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, wherein the photosensitive material has optical anisotropy, and the direction of the axis of the optical anisotropy is constant, the linear polarization of the laser beam. The polarization direction is inclined by 45 degrees with respect to the axis of the optical anisotropy, and the beam irradiation area formed by one scanning line or a plurality of continuous scanning lines irradiated by the laser beam is set to one.
It is characterized in that the temperature of a laser element of the laser light source for irradiation is changed between adjacent linear regions.

[0049] Still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus for a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, wherein the photosensitive material has optical anisotropy, and the direction of the axis of the optical anisotropy is constant, the linear polarization of the laser beam. The direction of polarization is inclined by 45 degrees with respect to the axis of the optical anisotropy, and one pixel irradiated by the laser beam or a beam irradiation area composed of a plurality of continuous pixels is defined as one pixel area. The temperature of a laser element of the laser light source that performs irradiation is changed between the pixel areas to be irradiated.

According to the above-described laser beam exposure apparatus, interference unevenness due to fluctuations in the thickness of the photosensitive material is suppressed, and
When the direction of the axis of optical anisotropy is constant, interference unevenness due to optical anisotropy can be sufficiently suppressed.

In order to incline the polarization direction of the linearly polarized light of the laser beam by 45 degrees with respect to the axis of the optical anisotropy, when the axis of the optical anisotropy is parallel or perpendicular to the horizontal plane, It is preferable that the light source unit is inclined by 45 degrees with respect to the horizontal plane.

Further, in order to incline the polarization direction of the linearly polarized light of the laser beam by 45 degrees with respect to the axis of the optical anisotropy, the laser light source unit is rotated by 45 degrees with respect to the axis of the optical anisotropy. It is preferable to incline by degrees.

Further, the light-sensitive material can be a silver halide light-sensitive material. In this case, the silver halide photosensitive material may be obtained by dry thermal development or wet development.

Further, still another laser beam exposure apparatus according to the present invention is a laser beam exposure apparatus, which comprises a photosensitive material having at least one support layer or photosensitive layer that is transparent or translucent to the wavelength to be used. A laser beam exposure apparatus for irradiating and exposing a beam, irradiating the photosensitive material with the polarization state of the laser beam being circularly polarized, and irradiating one scanning line or a plurality of continuous lines irradiated with the laser beam. Is defined as one linear region, and the light amount-wavelength characteristic and the light amount distribution ratio of the laser beam to be irradiated are changed between the adjacent linear regions.

According to the above-described laser beam exposure apparatus, it is possible to suppress the interference unevenness due to the thickness variation of the photosensitive material,
Interference unevenness due to optical anisotropy can be sufficiently suppressed irrespective of the direction of the axis of optical anisotropy.

In this case, the light amount-wavelength characteristic can be changed by changing the temperature of the laser element of the laser light source.

Further, in the laser beam light amount modulation method according to the present invention, a laser beam emitted from the laser light source is injected into a laser element of the laser light source by injecting a light beam having a wavelength different from that of the laser light source. It is characterized by modulation. According to this, by injecting a light beam having a wavelength different from the wavelength of the laser light source into the laser element,
By controlling the temperature of the laser element surface, the wavelength of the laser beam emitted from the laser light source can be modulated with a simple configuration. In this case, the light beam of the different wavelength can be injected from the light source into the laser element via the light reflecting mirror.

In this case, the light beam having the different wavelength can be injected from the light source into the laser element via the light reflecting mirror.

Further, the laser beam light quantity modulation device according to the present invention injects a light beam having a wavelength different from the wavelength of the laser light source into a laser element of the laser light source to thereby control the wavelength of the laser beam emitted from the laser light source. Is modulated.

As a laser beam exposure method, a laser beam is irradiated from a laser light source to a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive for the wavelength to be used. At this time, a beam irradiation area formed by one scanning line or a plurality of continuous scanning lines irradiated by a laser beam is defined as one linear region, and a laser beam to be irradiated is irradiated between adjacent linear regions. The light amount distribution ratio can be changed, and the same effect as described above can be obtained. In this case, a beam irradiation area surrounded by one or a plurality of pixels for irradiating a laser beam may be regarded as one pixel area, and a light amount distribution ratio of a laser beam to be irradiated between adjacent pixels may be changed. Further, the temperature of the laser element of the laser light source that performs irradiation may be changed between the linear region and the adjacent linear region or between the pixel region and the adjacent pixel region.

[0061]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the principle of preventing interference fringes with two laser beams having different wavelengths will be described with reference to FIGS. The support layer and the photosensitive layer of the film F are transmissive or semi-transmissive for the wavelength used. (1) When the laser has a single wavelength (the amount of light varies due to interference)

Consider a case where a laser beam is vertically incident on the film F as shown in FIG. The thickness D2 of the photosensitive layer of the film F which is a silver halide photothermographic material is 20 μm, the refractive index n2 is 1.5, the thickness D1 of the support 1 is 180 μm, the refractive index n1 is 1.5, and the When the wavelength is 0.800 μm, the optical path difference δ = 2 (D1 × n1 + D2 × n2) = 2
× (180 × 1.5 + 20 × 1.5) = 600 μm
600 / 0.8 = 750, which is an integral multiple of the wavelength. The laser beam shown in FIG. 1 has a phase as shown in FIG. 2A at the incident point 5 on the front surface F1 of the film F on the photosensitive layer 2 side, and the incident light is partially reflected by the back surface F2 of the film, and the reflected light is reflected. The light is reflected at the incident point 5 of the film F. At the incident point 5, the phase is as shown in FIG. 2B, and since both phases coincide with each other, the amount of light applied to the recording layer 2 becomes the maximum. On the other hand, when the thickness of the support is 180.13 μm, the optical path difference δ is 7 wavelengths.
50.5 times, reflected on the back surface F2, and further on the front surface F1
The phase of the laser beam reflected at the point of incidence 5 is as shown in FIG. 2C at the incident point 5 and is exactly opposite to the phase of FIG. 2A. The amount of light applied to the layer 2 is minimized. As described above, the amount of light applied to the recording layer 2 changes due to the variation in the thickness of the support 1 of the film F. (2) When the laser has two wavelengths

In the above example, if 0.8 μm,
If exposure is performed using two laser beams having a wavelength of 0.80053 μm, the above-described optical path difference of 600 μm becomes 750 times and 749.5 times the wavelengths of these two laser beams, respectively, and the photosensitive layer 2 is irradiated. The light amount is the sum of the two, that is, halfway between the maximum and the minimum. Here, for example, the optical path difference is 60
Even if it becomes 0.4 μm, this optical path difference of 600.4 μm is
For each of the two laser light wavelengths, 750.
5 times and 750 times, and the amount of light irradiated on the photosensitive layer is also halfway between the minimum and the maximum. That is, even if the thickness of the support 1 changes, the amount of light applied to the photosensitive layer does not change.
As described above, it can be understood that the influence of interference can be reduced by irradiating laser light having two different wavelengths.

Next, as shown in FIGS. 8 and 9, in order to reduce the influence of interference as described above, the beam irradiation area surrounded by one or a plurality of scanning lines is set as one linear area, A description will be given of changing the light beam distribution ratio of the irradiation beam between the linear regions.

As shown in FIG. 8, when the laser light source has a wavelength-light amount characteristic as shown by a solid line 93, a laser beam is output from the laser light source at a certain light amount P1 and at a wavelength λ1 and another light amount P2. As described above, laser beams having different wavelengths can be emitted by changing the distribution ratio of the amount of light emitted from the laser light source.

Here, when the main scanning is first performed by the laser beam of the wavelength λ1 with the light amount P1 from the laser light source, as shown in FIG. 9, the first linear region is formed by one scanning line in the main scanning direction. Then, an interference pattern appears on this scanning line (the repetition of ● in FIG. 9 represents the interference pattern), but on the next scanning line, which is the second linear region, the light amount P2 is different from the light amount P1. When the main scanning is performed by the laser beam having the wavelength λ2, an interference pattern appears at a different phase from the first linear region on the scanning line of the second linear region as shown in FIG. Therefore, when considering the entire region including the first linear region and the second linear region, as described above, two laser beams having different wavelengths are irradiated, and thus the macroscopic region is irradiated. In this way, interference can be suppressed.
Therefore, in the example of the irradiation pattern shown in FIG. 9, by repeating the exposure in the third linear region in the same manner as in the exposure of the first linear region, the interference unevenness can be made invisible macroscopically in the entire film.

As described with reference to FIGS. 1 and 2, it is possible to easily suppress interference unevenness (layers between the support and the photosensitive layer) due to multiple reflection of the beam inside the photosensitive material. When a laser diode is used as a laser light source, the light amount distribution ratio can be changed and the wavelength can be changed only by modulating the operating current of the laser diode, so that high-speed modulation is possible and an optically simple configuration can be achieved. Further, it is not necessary to perform wavelength selection as in the case of a plurality of laser light sources. Further, when two laser light sources are used, correction can be performed even if the beam is shifted in the scanning direction, and optical adjustment becomes relatively easy.

As described above, high-speed modulation can be performed in the laser beam exposure apparatus, and a simple configuration and low cost can be achieved.

Next, an irradiation pattern different from that in FIG. 8 will be described with reference to FIG. In the example of FIG. 14, two main scans are performed at the same wavelength λ1, two scan lines are used as a first linear region, and then two main scans are performed at another different wavelength λ2. The line is defined as a second linear region, and then the main scanning is performed twice at λ1, and the laser beam is exposed so that the two scanning lines are defined as a third linear region. Interference unevenness occurs microscopically in the scanning line of each linear area, but the first linear area and the second
Considering the entire region including the linear region described above, two laser beams having different wavelengths are irradiated as described above, so that macroscopic interference can be suppressed.

In FIG. 8, the wavelength from the laser light source is changed by making the light amounts different from each other.
The present invention is not limited to this, and the wavelength may be changed by changing the temperature of the laser diode chip of the laser light source. The oscillation wavelength of a laser diode has temperature dependence, and, for example, as shown in FIG. 13, the oscillation wavelength of the laser diode changes with temperature. Therefore, based on FIG. 13, by setting the temperature so as to oscillate necessary different wavelengths and controlling the surface temperature of the laser diode chip, laser beams having different wavelengths can be obtained.

An example of temperature control of the laser diode chip as described above will be described with reference to FIG. The laser diode chip temperature control device shown in FIG. 15 includes a laser diode 231 for emitting laser beams having different wavelengths λ1 and λ2 to the photosensitive material F, a lens 232 provided in front of the laser diode 231; Different wavelength λ3
A laser diode 237 for emitting a laser beam, a lens 238 provided in front of the laser diode 237, a control device 239 for controlling the laser diode 237 for temperature control, and wavelengths λ1 and λ2 from the laser diode 231. A wavelength-selective mirror-2 such as a dichroic mirror that transmits the laser beam and reflects the laser beam of wavelength λ3 from the temperature controlling laser diode 237 toward the surface of the laser element 231a of the laser diode 231.
33.

The temperature of the surface of the laser element 231a can be raised by condensing a laser beam of wavelength λ3 from the temperature controlling laser diode 237 via the lens 238, the mirror 233 and the lens 232 on the surface of the laser element 231a. it can. The surface temperature is changed to, for example, temperatures t1 and t2 in FIG.
The controller 23 controls the intensity (light amount) of the laser beam from
9 to be changed. Thereby, the wavelength of the laser beam emitted from the laser element 231a of the laser diode 231 can be changed to λ1 and λ2 as shown in FIG. The laser beam for temperature control has a wavelength (λ
Since 3) is significantly different from the wavelength (λ1, λ2) of the laser beam, even if the light of wavelength λ3 is directly injected into the laser light source, laser oscillation noise does not occur, so there is no adverse effect. For example, λ1 = 0.8 μm, λ2 = 0.80053
When μm is set, λ3 can be set to 0.660 μm.

Next, using two laser light sources and changing the light amount distribution ratio of each laser beam to make the interference unevenness invisible will be described with reference to FIG. Wavelength λ
A laser light source A for emitting one laser beam and a wavelength λ2
The first main scan is performed with the output from the laser light source A set to 100% and the output from the laser light source B set to 0% using the laser light source B that emits the laser beam of This is the first linear region. Subsequently, the next main scan is performed with the output from the laser light source A set to 0% and the output from the laser light source B set to 100%, and these scanning lines are set as second linear regions. Irradiation with a laser beam is performed as in the third and fourth linear regions while switching in a regular pattern. According to this irradiation pattern, although interference unevenness occurs microscopically in each linear region, considering the linear region and the adjacent linear region,
The interference unevenness is macroscopically invisible for the entire photosensitive material. The inconsistency of the interference unevenness by changing the light amount distribution ratio as shown in FIG. 16 is performed when the laser beam is equal to or less than a predetermined light amount. This is because the problem of interference unevenness hardly occurs in the density range where the light amount is close to the maximum light amount.

Next, another irradiation pattern different from the irradiation pattern of FIG. 16 will be described with reference to FIG. In the example of FIG. 17, the main scanning is performed with the output from the laser light source A (wavelength λ1) set to 100% and the output from the laser light source B (wavelength λ2) set to 0%. The next main scanning is performed with the output of the laser light source B at 50% and the output of the laser light source B at 50%, and these scanning lines are set as the first linear region. Next, the main scanning is performed with the output from the laser light source A set to 0% and the output from the laser light source B (wavelength λ2) set to 100%. Subsequently, the output from the laser light source A is set to 50%. The next main scanning is performed with the output from the laser light source B set to 50%, and these scanning lines are used as second linear regions. Irradiation with a laser beam is performed while the first and second linear regions are alternately switched in a regular pattern. That is, the third linear region is a pattern of the first linear region, and the fourth linear region is a pattern of the second linear region. According to this irradiation pattern, interference unevenness occurs microscopically in each linear region. However, considering the linear region adjacent to the linear region, the interference unevenness is macroscopically invisible as a whole. I have.

As described above, the exposure pattern according to the present invention can be variously modified. One line area is not limited to a beam irradiation area surrounded by one or a plurality of scanning lines. The linear region may be a beam irradiation region surrounded by one or a plurality of pixels, and the distribution of the amount of the laser beam irradiated between adjacent linear regions may be changed, or the temperature of the laser element may be changed. Also. The light beam distribution ratio of the laser beam may be a random pattern.

Hereinafter, embodiments and examples which are examples of the present invention will be described. Therefore, the meaning of the terms of the invention and the invention itself should not be construed as being limited by the description of the embodiments and examples of the invention, and it is needless to say that the invention can be appropriately changed / improved.

FIG. 3 is a front view of an image recording apparatus including the laser beam exposure apparatus of the present embodiment, and FIG. 4 is a left side view of the image recording apparatus. The image recording apparatus 100 according to the present embodiment includes a feeding unit 110 that feeds a film F that is a sheet-like heat developing material one by one, an exposure unit 120 that exposes the fed film F, and an exposure unit 120 that exposes the film F. And a heat developing section 130 for developing the processed film F. Film F is a silver halide photothermographic material having a photosensitive layer containing silver halide particles and organic acid silver on a support, and γ of 2 or more. Hereinafter, an image recording apparatus according to the present embodiment will be described with reference to the drawings.

In FIGS. 3 and 4, the feeding section 110 is provided with two upper and lower trays T for accommodating a plurality of stacked films F. Above the front end of each tray T, there is provided a suction unit 111 that moves up and down by sucking the front end of the film F. Also, the suction unit 11
In the vicinity of 1, there is provided a feed roller pair 112 for feeding the film F supplied by the suction unit 111 in the direction of the arrow (1) (horizontal direction). Also, the suction unit 11
1 transports the film F, which is also movable back and forth, to the feed roller pair 112. A plurality of transport roller pairs 141 for transporting the film F fed by the feed roller pair 112 in the vertical direction are provided. The transport roller pair 141 transports the film F in the direction (downward) indicated by the arrow (2) in FIG.

At the lower part of the image recording apparatus 100, a transport direction conversion unit 145 is provided. This transport direction converter 1
Reference numeral 45 denotes a pair of transport rollers 14 as shown in FIGS.
1, the film F conveyed vertically downward as shown by the arrow (2) in FIG. 4 is conveyed in the horizontal direction as shown by the arrow (3), and then the conveyance direction is changed from the arrow (3) to the arrow (4). The film F is transported after being converted to a right angle, and then the transported film F whose transport direction is changed and transported is transported upward in the vertical direction shown by the arrow (5) in FIG.

Then, as shown in FIG. 3, the film F conveyed from the conveyance direction changing unit 145 is moved by an arrow (6) in FIG.
Plural transport roller pairs 14 transported vertically upward as indicated by
2 is provided, and the film F is transported from the left side of the image recording apparatus 100 upward in the vertical direction indicated by the arrow (6) in FIG.

In the course of transporting vertically upward, the laser beam exposure device 120 scans and exposes the photosensitive surface of the film F with a laser beam having a wavelength in the infrared range of 780 to 860 nm, and responds to the exposure image signal. Latent image is formed.

A heat developing section 130 is provided on the upper portion of the image recording apparatus 100. In the vicinity of the drum 14 of the heat developing section 130, a pair of conveying rollers 142 is provided in a vertically upward direction shown by an arrow (6) in FIG. A supply roller pair 143 for supplying the film F conveyed to the drum 14 to the drum 14 is provided.

The film F is supplied to the drum 14 at random timing depending on the situation. In addition, instead of supply at random timing, supply may be performed at a certain timing.

The drum 14 of the heat developing unit 130 heats the film F while rotating in the direction indicated by the arrow (7) in FIG. 3 with the film F and the outer peripheral surface of the drum 14 in close contact with each other. And heat develop. That is, the film F
Is formed into a visible image. Then, the drum 1 of FIG.
The film F is separated from the drum 14 when the film F is rotated to the right with respect to the film 4. A plurality of transport roller pairs 144 are provided on the right side of the thermal developing unit 130, and while transporting the film F separated from the drum 14 obliquely downward to the right as shown by an arrow (8) in FIG. Cooling. Then, the transport roller pair 144 transports the cooled film F while the densitometer 1
18 measures the concentration of the film F. Thereafter, the plurality of transport roller pairs 144 are moved to the film F separated from the drum 14.
3 is transported in the horizontal direction as shown by an arrow (9) in FIG. 3, and is ejected from the upper part of the image recording apparatus 100.
To be discharged.

FIG. 5 is a conceptual diagram showing the configuration of the laser beam exposure apparatus 120. Laser beam exposure device 120
The laser light L, the intensity of which is modulated based on the digital image signal S, is deflected by the rotary polygon mirror 113 to perform main scanning on the film F, and the film F is moved substantially in the main scanning direction with respect to the laser light L. Sub-scanning is performed by relative movement in a perpendicular direction, and a latent image is formed on the film F using the laser beam L.

The image recording apparatus 100 includes a radiation CT apparatus,
The image signal S transmitted from the image signal generation device 121 such as a scanner is received via the image I / F 122 and the modulation unit 1
23. The modulation unit 123 converts the image signal S into an analog signal, and sends the analog-converted exposure image signal to the driver 124. The driver 124 outputs the laser light source units 125 and 127 according to the transmitted exposure image signal and the control signal.
Is controlled so as to emit a laser beam (hereinafter, also referred to as “laser light”) while switching every time the main scanning is completed.

The two laser light sources 125 and 127 are, for example, composed of laser diodes that emit laser beams having different wavelengths (λ 1 and λ 2), and the wavelength of the laser light (λ 1 ) Is set to, for example, 800 nm, and the wavelength (λ2) of the laser light emitted from the laser light source unit 127 is, for example, 800.53.
nm.

As shown in FIG. 5, the laser light L1 emitted from the laser light source 125 travels straight through the half mirror 128b and enters the condenser lens 126. On the other hand, the laser light source 12
The laser light L2 emitted from 7 passes through the same optical path as the laser light L1 via the mirror 128a and the half mirror 128b, and is incident on the condenser lens 126.

The laser beams L1 and L2 emitted from the laser light source units 125 and 127 have their beam diameters converted by the condenser lens 126, and are converged by the cylindrical lens 115 only in one direction (up and down in this embodiment). The light is incident as a line image perpendicular to the rotation axis of the rotating polygon mirror 113 on the mirror surface of the rotating polygon mirror 113 rotating in the rotation direction indicated by the arrow A in FIG. The rotating polygon mirror 113 outputs the laser light L1.
Alternatively, L2 is reflected and deflected in the main scanning direction, and the deflected laser beams L1 and L2 pass through an fθ lens 114 including a cylindrical lens formed by combining four lenses, and then extend on the optical path in the main scanning direction. Mirror 1
The main scanning is repeatedly performed in the direction of the arrow X on the surface to be scanned of the film F which is reflected at 16 and conveyed (sub-scanned) by the conveying device 142 in the direction of the arrow Y. In this case, every time one main scan is completed, the laser beam is switched to L1 (1
00%), L2 (0%) → L1 (0%), L2 (100
%). Thus, scanning is performed over the entire surface to be scanned on the film F by the laser beams L1 and L2 in a pattern as shown in FIG. Note that the cylindrical lens of the fθ lens 114 converts the incident laser beams L1 and L2 onto the surface of the film F to be scanned.
Converge only in the sub-scanning direction.

In the laser beam exposure apparatus 120 shown in FIG.
Since the optical path of the laser light L1 emitted from the laser light source 125 and the optical path of the laser light L2 emitted from the laser light source 127 do not need to strictly overlap as in the related art, the laser light source 125 and the laser light source 127 , Mirror 128a, half mirror 128b, condenser lens 126,
The adjustment of the optical system such as the cylindrical lens 115 becomes easy. Further, correction can be made even if the laser beam is shifted in the main scanning direction, and the laser beams in the main scanning direction do not necessarily have to match. Therefore, the rotating polygon mirror 113, fθ
Adjustment of the optical system such as the cylindrical lens of the lens 114 and the mirror 116 is also facilitated. Therefore, the laser beam exposure apparatus 120 is relatively easy to perform optical adjustment at the time of manufacturing and maintenance, and is advantageous in cost.

As described above, a latent image based on the image signal S is formed on the film F. In this case, the laser light L
1 (wavelength λ1) and the laser beam L2 (wavelength λ2) are exposed in a pattern as shown in FIG. 16, so that even if an interference pattern appears on a scanning line for each linear region, the entire film F is exposed as described above. Interference unevenness can be suppressed. For this reason, interference unevenness can be made invisible in the film F after thermal development, and density unevenness can be reduced, so that image quality is improved.

Next, referring to FIG.
Modification 20 will be described. In this modification, one laser light source is used, and by giving a temperature difference to the laser light source, a wavelength difference is generated in the emitted laser light. The laser light source unit 225 shown in FIG. 6 includes a laser diode, and oscillates a laser beam having the same wavelength at the same temperature. As shown in FIG. 6, the laser light source unit 225 is provided with a temperature control element 225a and a temperature detection element 225b. The temperature control unit 225a is controlled based on the temperature detected by the temperature detection element 225b by the temperature control unit 128 so that a temperature difference occurs between the laser diodes of the laser light source unit 225.

FIG. 7 shows the temperature control element 225a in more detail. The laser diode chip 227 is directly attached to the temperature control element 225a. Further, a temperature detecting element 225b is arranged near the laser diode chip 227 of the temperature control element 225a. Further, a fin 226 is attached to the temperature control element 225a.

A laser diode is related to its oscillation wavelength.
For example, as shown in FIG. 13, assuming that there is a temperature dependency, for example, the oscillation wavelength has a characteristic of increasing at a rate of 0.3 nm / ° C.
In the case of 0 μm, since the necessary wavelength difference Δλ (= λ1−λ2) is 0.53 nm, the necessary temperature difference ΔT is 0.53
/0.3≒1.8° C. As shown in FIG. 13, when the wavelength becomes λ1 at the temperature t1 and becomes the wavelength λ2 at the temperature t2, the temperature controller 128 makes the temperatures t1 and t2 (temperature difference ΔT = t2−t).
The laser beam L1 or L2 can be emitted from the laser light source unit 225 in an irradiation pattern as shown in FIG. 9 by controlling the temperature control element 225a so as to satisfy 1) and switching the temperature control element 225a each time the main scanning is completed. As a result, FIG.
The same effect as in the case of is obtained.

Note that a Peltier element or the like can be used as a temperature control element, and a thermocouple, a thermistor, or the like can be used as a temperature detection element. However, the present invention is not limited to these. Also,
The laser light source section does not necessarily have to oscillate laser light of the same wavelength at the same temperature. If the laser light section does not have the same wavelength at the same temperature, the laser light source section is heated in the same manner as described above so that a predetermined wavelength difference is obtained. What is necessary is just to give a difference.

Since there is only one laser light source, the configuration of the optical system such as the laser light source unit 225, the condenser lens 126, the cylindrical lens 115, the rotary polygon mirror 113, the cylindrical lens of the fθ lens 114, the mirror 116, etc. is simple. Thus, optical adjustment at the time of manufacturing and maintenance becomes easy, which is advantageous in terms of cost, and wavelength selection as in the case of a plurality of laser light sources becomes unnecessary.

Next, the configuration of a laser beam exposure apparatus that suppresses the influence on the occurrence of interference unevenness when a support made of PET or the like of a film as a photosensitive material has optical anisotropy will be described with reference to FIG.

The laser beam exposure apparatus shown in FIG. 18 uses a first laser light source 30 for emitting a laser beam having a wavelength λ1.
1, a second laser light source 302 for emitting a laser beam of wavelength λ2, a polarizing beam splitter (PBS) 306 for multiplexing laser beams of wavelengths λ1 and λ2, and a lens system 308 on which the multiplexed beam is incident. Λ / 4 wave plate 307 disposed between the PBS 306 and the lens system 308
A rotating polygon mirror 309 for allowing a beam emitted from the lens system 308 to enter and scan in the main scanning direction;
fθ lens 311. The λ / 4 wavelength plate 30
Instead of 7, a λ / 4 wavelength plate 310 may be arranged between the rotating polygon mirror 309 and the fθ lens 311 as shown by the broken line in FIG.

In the laser beam exposure apparatus shown in FIG.
A laser beam in a linearly polarized state from a laser light source 301 is transmitted through a lens 303 and a λ / 2 wavelength plate 305 to a PBS 3.
06, and a linearly polarized laser beam from the second laser light source 302
Go through S30. The two laser beams are combined by the PBS 306 and pass through the λ / 4 wavelength plate 307 to be in a circularly polarized state. The beam in this circularly polarized state is transmitted to the lens system 30.
8. Main scanning is performed on the film F via the rotating polygon mirror 309 and the fθ lens 311.

Here, for the film F, the support made of PET has an optical anisotropy due to the manufacturing method and the like, and the PET is made of PET.
In the horizontal direction H1 and the vertical direction H2 (the refractive index is different between H1 and H2) of the alignment axis, the refractive index changes as shown in, for example, patterns x, y, and z as shown in FIG. In this case, in the laser beam exposure apparatus of FIG. 18, exposure is performed in the same irradiation pattern as in FIG. 9, the amount of laser beam from the first laser light source 301 is a, and the amount of laser beam from the second laser light source 302 is As shown in FIG. 19, when the support has no optical anisotropy (homogeneous state) as shown in FIG. 19, a = b and a1 / a = At b1 / b, no interference unevenness occurs. That is, the intensity of the pattern of light and dark of the density change due to the interference between a and a1 and the intensity of the pattern of the density change due to the interference between b and b1 where the light and dark are reversed are the same. It can be suppressed.

On the other hand, when the support has optical anisotropy, the incident beam is distributed to each orientation axis as shown by the solid line and the dashed line in the figure. Reflected light of the distributed light from the back surface of the support is (a1, a2) and (b1, b2), respectively.
And In this case, since the refractive index differs depending on the orientation axis,
There is a difference t in the optical thickness. At this time, generally, a and a
1 (or b and b1) and a and a2
(Or b and b2) do not match the interference pattern. Therefore, the interference pattern at a and a1, the interference pattern at b and b1, the interference pattern at a and a2, and b and b2
The interference patterns cancel each other, but if the amounts of light distributed to the respective alignment axes are not uniform, even if a = b, interference unevenness usually remains. That is, as a condition for preventing the occurrence of interference unevenness, a = b and a1, a1
If the light amount distribution ratio to a2 and the light amount distribution ratio to b1 and b2 are the same, that is, if a1 / a2 = b1 / b2, interference unevenness does not occur.

The orientation axes H1 and H2 of the support are usually shown in FIG.
Since it is inclined as shown in (a), a1> a2, b1 <
b1 and a1 / a2 ≠ b1 / b2, and interference unevenness occurs. However, when the laser beam is in a circularly polarized state, the polarization plane rotates at high speed with respect to the alignment axes H1 and H2. , The light amount distribution ratio to each alignment axis is averaged, and a1 = b1 and a2 = b2,
a1 / a2 = b1 / b2.

As described above, as a result of the polarization planes aa and bb being rotated, the light amount distribution ratio to each of the alignment axes H1 and H2 becomes the same. Therefore, the PET support has optical anisotropy, and the film has a change pattern x,
Even if y and z are generated as shown in FIG. 18, it is possible to suppress interference unevenness and make it invisible.

Also, as shown in FIG. 20B, the same effect as described above can be obtained by inclining the polarization direction of the linearly polarized laser beam by 45 ° with respect to the axis of optical anisotropy in advance. Can be. For example, when the axis of optical anisotropy is parallel or perpendicular to the horizontal plane, the laser light source is arranged at an angle of 45 ° with respect to the horizontal plane.

Next, a modification of the laser beam exposure apparatus shown in FIG. 18 will be described with reference to FIG. The laser beam exposure apparatus shown in FIG.
Is provided. The temperature control element 302a is controlled in synchronization with FIG. 6, and controls the laser light source 302 so as to change the light amount-wavelength characteristic of the laser beam. By changing the light quantity distribution ratio with the first and second laser light sources 301 and 302 as shown in FIG. 16 or FIG. 17 and controlling the second laser light source 302 as shown in FIG. In addition to irradiating circularly polarized light, it is possible to change the light amount-wavelength characteristic and the light amount distribution ratio of the irradiated laser beam between adjacent linear regions. This makes it possible to suppress interference unevenness due to fluctuations in the thickness of the photosensitive material and to sufficiently suppress interference unevenness due to optical anisotropy regardless of the direction of the axis of optical anisotropy.

Next, a preferred configuration for changing the laser beam from linearly polarized light to circularly polarized light in the laser exposure beam apparatus as described above will be described with reference to FIG.
As shown in FIG. 21, for the reasons such as the arrangement of each member in the laser beam exposure apparatus, a large number of laser beams which are circularly polarized by a λ / 4 wavelength plate arranged so as to be transmitted immediately after the multiplexing of the laser beams. Mirrors 351, 352, 353
When the polygon mirror 354 is guided to the polygon mirror-354 via the mirror, the polygon mirror 354 is made of metal from the viewpoint of cost and the like, but this circularly polarized state may return to the original state depending on the routing mirror. In order to prevent this, in FIG. 21, the drawing mirror 353 disposed immediately before the metal polygon mirror 354 is a metal mirror, the other mirrors 251 and 352 are dielectric multilayer mirrors, and the metal drawing mirror is used. 35
3 is the same as the beam center incident angle θ on the metal polygon mirror. According to this, although the degree of circular polarization slightly decreases near both ends in the main scanning direction, a low-cost metal mirror or metal polygon mirror can be used, which is preferable.

Further, as a preferable configuration for changing the laser beam from linearly polarized light to circularly polarized light, all mirrors provided after the λ / 4 wavelength plate do not use a metal mirror, but have a dielectric multilayer mirror. Good to do.

Next, the film F will be described. FIG. 10 is a cross-sectional view of the film F, schematically illustrating a chemical reaction in the film F during exposure. FIG. 11 is a cross-sectional view similar to FIG. 10, schematically showing a chemical reaction in the film F during heating. In the film F, a photosensitive layer mainly composed of polyvinyl butyral is formed on a support (base layer) made of PET, and a protective layer made of cellulose butyrate is further formed thereon. In the photosensitive layer, silver behenate (Beh. A) was used.
g), a reducing agent and a toning agent.

When the film F is irradiated with the laser beam L from the laser beam exposure device 120 during the exposure,
As shown in FIG. 0, silver halide grains are exposed to the area irradiated with the laser beam L, and a latent image is formed. On the other hand, when the film F is heated to a temperature equal to or higher than the minimum thermal development temperature, FIG.
As shown in FIG. 1, silver ions (Ag ⁺ ) are released from silver behenate, and behenic acid that has released silver ions forms a complex with the toning agent. Thereafter, silver ions are diffused, and the reducing agent acts with the exposed silver halide grains as nuclei to form a silver image by a chemical reaction. As described above, the film F contains the photosensitive silver halide grains, the organic silver salt, and the silver ion reducing agent, and is not substantially thermally developed at a temperature of 40 ° C. or lower, and is not substantially developed at a temperature of 80 ° C. or higher. Thermal development is performed at a temperature higher than the temperature.

The photosensitive silver halide used in the heat-developable material is typically from 0.75 to 25 with respect to the organic silver salt.
mol% can be used, preferably
It can be used in the range of 2 to 20 mol%. Further, it is preferable that the film F contains the organic acid silver in an amount of 4 times or more of the silver halide grains in the photosensitive layer. The average grain size of the silver halide grains is 0.1 μm.
It is as follows.

The silver halide may be silver bromide, silver iodide, silver chloride, silver bromoiodide, silver chlorobromoiodide,
Any photosensitive silver halide such as silver chlorobromide may be used. The silver halide may be in any form that is photosensitive, including, but not limited to, cubic, orthorhombic, tabular, tetrahedral, and the like.

The organic silver salt is any organic material containing a reduction source of on in silver. Organic acids, especially long chain fatty acids (10
-30 carbon atoms, preferably 15-28 carbon atoms)
Are preferred. When the ligand is 4.0 to 10.0 overall
It is preferable that the organic or inorganic silver salt complex has a certain stability between the two. And about 5 times the weight of the image recording layer
It is preferably about 30%.

The organic silver salt which can be used in the heat developing material is a silver salt which is relatively stable to light, and is composed of an exposed photocatalyst (for example, silver halide for photography) and the presence of a reducing agent. Is a silver salt that forms a silver image when heated to a temperature of 80 ° C. or higher.

Preferred organic silver salts include silver salts of organic compounds having a carboxyl group. They include silver salts of aliphatic carboxylic acids and silver salts of aromatic carboxylic acids. Preferred examples of the silver salt of an aliphatic carboxylic acid include silver behenate, silver stearate and the like. Silver salts with halogen atoms or hydroxyl in aliphatic carboxylic acids can also be used effectively. Silver salts of compounds having a mercapto or thione group and derivatives thereof can also be used. Further, a silver salt of a compound having an imino group can be used.

The reducing agent for the organic silver salt may be any material capable of reducing silver ions to metallic silver, and is preferably an organic material. Conventional photographic developers such as phenidone, hydroquinone and catechol are useful. However, phenol reducing agents are preferred. The reducing agent is 1 to 3 in the image recording layer.
It should be present at 10% by weight. In a multi-layer configuration,
If the reducing agent is added to a phase other than the emulsion layer, a slightly higher proportion, about 2 to 15% by weight, is more desirable.

[0116]

EXAMPLES The following films F were respectively exposed and thermally developed by the above-described apparatus according to the present embodiment. As a result, density unevenness possibly caused by interference unevenness was not found. Hereinafter, the production of the film F will be described.

A silver halide-silver behenate dry soap was prepared by the method described in US Pat. No. 3,839,049. The silver halide had 9 mole% of the total silver, while silver behenate had 91 mole% of the total silver.
The silver halide has 0.055% 2% iodide.
It was a μm silver bromoiodide emulsion.

The heat-developable emulsion was homogenized with 455 g of the above-mentioned silver halide-silver behenate dry soap, 27 g of toluene, 1918 g of 2-butanone, and polyvinyl butyral (B-79 manufactured by Monsanto). The homogenized heat-developed emulsion (698 g) and 60 g of 2-butanone were cooled to 12.8 ° C. while stirring. Pyridinium hydrobromide perbromide (0.92 g) was added and stirred for 2 hours.

3.25 ml of a calcium bromide solution (CaBr (1 g) and 10 ml of methanol) were added, followed by stirring for 30 minutes. Further, polyvinyl butyral (158 g; B-79 manufactured by Monsanto) was added, and 20
Stirred for minutes. The temperature was raised to 21.1 ° C. and the following was added with stirring over 15 minutes. 3.42 g of 2- (tribromomethylsulfone) quinoline, 28.1 g of 1,1-bis (2-hydroxy-3,5-dimethylphenyl) -3,5,5-trimethylhexane, 5-methylmercaptobenzimidazole Solution containing 0.545 g

41.1 g, 2- (4-chlorobenzozoyl) benzoic acid 6.12 g S-1 (sensitizing agent) 0.104 g methanol 34.3 g isocyanate (Desmoder N3300, manufactured by Mobay) 2.14 g tetra Chlorophthalic anhydride 0.97 g Phthalazine 2.88 g The dye S-1 has the following structure.

Embedded image An active protection topcoat solution was prepared using the following components: 2-butanone 80.0 g methanol 10.7 g cellulose acetate butyrate (CAB-171-155, manufactured by Eastman Chemicals)

8.0 g 4-Methylphthalic acid 0.52 g MRA-1, Mottle reducing agent, N-ethylperfluorooctanesulfonylamide Ethyl methacrylate / hydroxyethyl methacrylate / acrylic acid tertiary polymer in a weight ratio of 70:20:10 0 .80g

This heat-developable emulsion and topcoat were simultaneously coated on a 0.18 mm blue polyester film base. The knife coater was set up with two bars or knives coating simultaneously at a distance of 15.2 cm. The silver trip layer and the top coat were multi-layer coated by pouring the silver emulsion on the film prior to the rear knife and the top coat on the film prior to the front bar.

The film was then pulled forward so that both layers were coated simultaneously. This was obtained by performing the multilayer coating method once. The coated polyester base was dried at 79.4 ° C. for 4 minutes. As the knife, as dry coating weight per 1 m ² for the silver layer is 23g, then dry coating weight per 1 m ² is adjusted so as to be 2.4g for the top coat Was. The optical path length determined from the dry thickness and refractive index of these layers and the thickness and refractive index of the film base as the support is 6.
It was 00 μm.

[0124]

According to the present invention, it is possible to provide a laser beam exposure apparatus in which the optical adjustment is simple, the loss of the light amount is suppressed, and the density does not fluctuate due to interference unevenness.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a film for explaining the principle of the present invention.

2A is a diagram showing the wavelength (λ1) and phase of a laser beam at an incident point 5 of incident light in FIG. 1; FIG. 2A is a diagram showing the wavelength (λ2) and phase of a laser beam at an incident point 6 of reflected light; FIG. 1B is a diagram showing the same phase as FIG. 1A), and FIG. 1C is a diagram showing a wavelength (λ2) and a phase (a phase opposite to FIG. 1A) of the laser beam at the incident point 6 of the reflected light.

FIG. 3 is a front view of the heat developing device according to the embodiment of the present invention.

FIG. 4 is a left side view of the heat developing device according to the embodiment of the present invention.

FIG. 5 is a schematic diagram illustrating a configuration of a laser beam exposure device of the thermal developing device of FIG. 3;

FIG. 6 is a schematic view showing a modification of the laser beam exposure apparatus.

FIG. 7 is a side view showing the laser light source unit and the temperature control element of the laser beam exposure apparatus of FIG. 6 in more detail.

FIG. 8 is a diagram for explaining that two different wavelengths are emitted by changing the light amount distribution ratio of the laser light source in the present embodiment.

FIG. 9 is a diagram showing an irradiation pattern for invisible interference unevenness in the present embodiment.

FIG. 10 is a cross-sectional view of the film F according to the present embodiment, schematically showing a chemical reaction in the film F during exposure.

FIG. 11 is a cross-sectional view similar to FIG. 10, schematically showing a chemical reaction in the film F during heating.

FIGS. 12A and 12B are conceptual diagrams illustrating a relationship between a cross section of a film and a laser beam for explaining a problem of the related art.

FIG. 13 is a diagram conceptually showing a wavelength change due to a temperature of a laser diode.

FIG. 14 is a diagram showing a modification of the irradiation pattern for making the interference unevenness invisible in the present embodiment.

FIG. 15 is a schematic diagram of a temperature control device for a laser element of a laser light source.

FIG. 16 is a diagram for describing an example in which the light amount distribution ratio for two laser light sources is changed in order to make interference unevenness invisible in the present embodiment.

FIG. 17 is a view for explaining another example in which the light amount distribution ratio for two laser light sources for changing the interference unevenness is made invisible in the present embodiment.

FIG. 18 is a schematic perspective view showing a laser beam exposure apparatus for exposing a laser beam that has been changed from linearly polarized light to circularly polarized light to a photosensitive material having optical anisotropy in the present embodiment.

FIG. 19 is a view for explaining a problem when a support of a photosensitive material has optical anisotropy.

20A is a diagram for explaining a phenomenon in which interference unevenness occurs due to the optical anisotropy of a support of a photosensitive material, and FIG. 20 shows that the laser beam exposure apparatus in FIG. 18 can suppress such interference unevenness. FIG. 6B is a diagram for explaining the operation.

21 is a schematic plan view showing a preferred configuration for changing a laser beam from linearly polarized light to circularly polarized light in the laser beam exposure apparatus of FIG. 18;

FIG. 22 is a schematic perspective view showing a laser beam exposure apparatus showing a modification of FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Film support 2 Film photosensitive layer 100 Thermal developing device 110 Storage part 120 Laser beam exposure apparatus 130 Developing part 125,127,225 Laser light source part 225a Temperature control element 225b Temperature detection element 128 Temperature control part 129 Light modulation element 113 Rotating polygon mirror 142 Conveyor 306 Polarizing beam splitter (P
BS) 307,310 λ / 4 wavelength plate 353 Metal mirror 354 Metal polygon mirror F Film D1 Thickness of film support n1 Refractive index of support D2 Thickness of photosensitive layer of film n2 Refractive index of photosensitive layer λ1 Laser Light wavelength λ2 Different laser light wavelength

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03C 5/08 351 G03C 5/08 351 2H123 G03D 13/00 G03D 13/00 A 5C072 G 5C074 H04N 1/113 H04N 1/23 103Z 1/23 103 1/04 104A // B41J 2/44 B41J 3/00 DF term (reference) 2C362 AA04 AA09 AA60 BA64 CB59 2H045 AA01 BA02 BA22 BA32 DA02 DA41 2H099 AA00 BA09 CA02 CA07 2H110 AA01 AA17 AA19 AA22 AA23 CD14 2H112 AA03 AA11 BC32 2H123 AB00 AB03 AB23 CA00 CA22 CB00 CB03 5C072 AA03 BA18 HA02 HA06 HA08 HA13 HB01 HB04 HB06 HB08 VA03 5C074 AA03 BB03 BB25 CC22 CC26 DD08 HH02

Claims (208)

[Claims] 1. A laser beam exposure apparatus for irradiating a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive for a wavelength to be used. A single line or a beam irradiation area composed of a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, and a laser beam to be irradiated between adjacent linear regions A laser beam exposure apparatus characterized by changing a light amount distribution ratio of the laser beam. 2. The laser beam exposure apparatus according to claim 1, wherein a pattern of a light amount distribution ratio of the laser beam is regular. 3. The laser beam exposure apparatus according to claim 1, wherein a pattern of a light amount distribution ratio of the laser beam is random. 4. The laser beam exposure apparatus according to claim 1, wherein the linear region and the adjacent linear region are in a range where interference unevenness is invisible. 5. The laser beam exposure apparatus according to claim 1, wherein one laser light source is provided. 6. The laser beam exposure apparatus according to claim 5, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio between the adjacent linear regions. 7. The laser beam exposure apparatus according to claim 1, wherein a plurality of the laser light sources are provided. 8. The laser beam exposure apparatus according to claim 7, wherein the plurality of laser light sources having different light quantity distribution ratios are switched between the adjacent linear regions to irradiate the photosensitive material. 9. The laser beam exposure apparatus according to claim 7, wherein when there are a plurality of laser light sources, the light amount distribution ratio is changed when the laser beam is equal to or less than a predetermined light amount. 10. The laser beam exposure apparatus according to claim 9, wherein the predetermined light amount or less is equal to or less than a light amount level at which density unevenness due to interference can be visually recognized. 11. The laser beam exposure apparatus according to claim 1, wherein the photosensitive material is a material that easily interferes. 12. A laser beam exposure apparatus for irradiating a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer that is transparent or semi-transparent to the wavelength to be used. Defining a beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam as one pixel area, and changing a light amount distribution ratio of an irradiated laser beam between the adjacent pixel areas. A laser beam exposure apparatus. 13. The laser beam exposure apparatus according to claim 12, wherein a pattern of a light amount distribution ratio of the laser beam is regular. 14. The laser beam exposure apparatus according to claim 12, wherein the pattern of the light amount distribution ratio of the laser beam is random. 15. The laser beam exposure apparatus according to claim 12, wherein the pixel area and the adjacent pixel area are in a range where interference unevenness is invisible. 16. The laser beam exposure apparatus according to claim 12, wherein the number of the laser light sources is one. 17. The laser beam exposure apparatus according to claim 16, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio for each of the adjacent pixel areas. 18. The laser beam exposure apparatus according to claim 12, wherein a plurality of the laser light sources are provided. 19. The laser beam exposure apparatus according to claim 18, wherein the plurality of laser light sources having different light amount distribution ratios are switched between the adjacent pixels to irradiate the photosensitive material. 20. The laser beam exposure apparatus according to claim 18, wherein when there are a plurality of laser light sources, the light amount distribution ratio is changed when the laser beam is equal to or less than a predetermined light amount. 21. The laser beam exposure apparatus according to claim 20, wherein the predetermined light amount or less is equal to or less than a light amount level at which density unevenness due to interference can be visually recognized. 22. The laser beam exposure apparatus according to claim 12, wherein the photosensitive material is a material that easily interferes. 23. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer which is transparent or translucent to a wavelength to be used. A beam irradiation area formed by one scanning line or a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, and irradiation is performed between adjacent linear regions. A laser beam exposure apparatus characterized by changing the temperature of a laser element of a laser light source. 24. The laser beam exposure apparatus according to claim 23, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 25. The laser beam according to claim 24, wherein the laser light source having a different temperature of the laser element is switched between the adjacent linear regions to irradiate the photosensitive material. Exposure equipment. 26. The laser beam exposure apparatus according to claim 24, wherein the modulation is performed for each of the linear regions. 27. The laser beam exposure apparatus according to claim 23, wherein a temperature control member is directly connected to said laser element. 28. The method according to claim 24, wherein the modulation is performed by injecting a light beam for temperature modulation having a different wavelength from that of the light source into the laser element and modulating the light amount of the light beam. The laser beam exposure apparatus according to claim 1. 29. The laser beam exposure apparatus according to claim 23, wherein the modulation is a random temperature modulation. 30. The method according to claim 2, wherein the modulation is performed between binary temperatures such that the interference pattern is reversed.
30. The laser beam exposure apparatus according to any one of items 4 to 29. 31. The laser beam exposure apparatus according to claim 23, wherein the number of the laser light sources is one. 32. The laser beam exposure apparatus according to claim 23, wherein a plurality of said laser light sources are provided. 33. The laser beam exposure apparatus according to claim 31, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element between the adjacent linear regions. 34. The laser beam exposure apparatus according to claim 32, wherein the plurality of laser light sources having different laser element temperatures are switched between the adjacent linear regions to irradiate the photosensitive material. 35. A laser beam exposure apparatus for irradiating a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive for a wavelength to be used. A beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam is defined as one pixel area, and a temperature of a laser element of the laser light source that irradiates light between adjacent pixel areas. A laser beam exposure apparatus characterized by changing the following. 36. The laser beam exposure apparatus according to claim 35, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 37. The photosensitive material according to claim 3, wherein the laser light source in which the temperature of the laser element is different is switched for each of the adjacent pixel areas to irradiate the photosensitive material.
7. The laser beam exposure apparatus according to 6. 38. The laser beam exposure apparatus according to claim 36, wherein the modulation is performed for each pixel area. 39. The laser beam exposure apparatus according to claim 35, wherein a temperature control member is directly connected to said laser element. 40. The method according to claim 35, wherein the modulation is performed by injecting a light beam for temperature modulation having a different wavelength from that of the laser light source into the laser element and modulating a light amount of the light beam. 40. The laser beam exposure apparatus according to any one of items 39. 41. The laser beam exposure apparatus according to claim 35, wherein the modulation is a random temperature modulation. 42. The modulation according to claim 3, wherein the modulation is performed between binary temperatures such that the interference pattern is reversed.
41. The laser beam exposure apparatus according to any one of 5 to 40. 43. The laser beam exposure apparatus according to claim 35, wherein the number of the laser light sources is one. 44. The laser beam exposure apparatus according to claim 35, wherein a plurality of said laser light sources are provided. 45. The laser beam exposure apparatus according to claim 43, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element for each of the adjacent pixel areas. 46. The laser beam exposure apparatus according to claim 44, wherein the plurality of laser light sources having different laser element temperatures are switched between the adjacent pixels to irradiate the photosensitive material. 47. A laser beam exposure apparatus for irradiating a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive for a wavelength to be used. When the photosensitive material has optical anisotropy, the polarization state of the irradiation laser beam is controlled according to the optical anisotropy. 48. A laser beam exposure apparatus for irradiating a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive for the wavelength to be used. In the case where the photosensitive material has optical anisotropy, the polarization state of the irradiation laser beam is controlled in accordance with the optical anisotropy, and one scanning line or a continuous scanning line irradiated by the laser beam is used. A laser beam exposure apparatus, wherein a beam irradiation area formed by a plurality of scanning lines is defined as one linear area, and a light amount distribution ratio of an irradiated laser beam is changed between adjacent linear areas. 49. The laser beam exposure apparatus according to claim 48, wherein the number of the laser light sources is one. 50. The laser beam exposure apparatus according to claim 49, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio for each of the adjacent linear regions. 51. The laser beam exposure apparatus according to claim 48, wherein a plurality of said laser light sources are provided. 52. The laser beam exposure apparatus according to claim 51, wherein the plurality of laser light sources having different light quantity distribution ratios are switched for each of the adjacent linear regions to irradiate the photosensitive material. 53. The laser beam exposure apparatus according to claim 51, wherein when the number of the laser light sources is two, the polarization state is controlled after two linearly polarized laser beams are combined by a polarization beam splitter. . 54. The laser beam exposure apparatus according to claim 48, wherein a pattern of a light amount distribution ratio of the laser beam is regular. 55. The laser beam exposure apparatus according to claim 48, wherein a pattern of a light amount distribution ratio of the laser beam is random. 56. The laser beam exposure according to claim 48, wherein the linear region and the adjacent linear region are in a range where interference unevenness is invisible. apparatus. 57. The laser beam exposure apparatus according to claim 51, wherein when there are a plurality of laser light sources, the light amount distribution ratio is changed when the laser beam is equal to or less than a predetermined light amount. 58. The laser beam exposure apparatus according to claim 57, wherein the predetermined light amount or less is equal to or less than a light amount level at which density unevenness due to interference can be visually recognized. 59. The laser beam exposure apparatus according to claim 48, wherein the photosensitive material is a material that easily interferes. 60. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer which is transmissive or semi-transmissive for a wavelength to be used. In the case where the photosensitive material has optical anisotropy, while controlling the polarization state of the irradiation laser beam according to the optical anisotropy, one pixel or a plurality of continuous pixels irradiated by the laser beam A laser beam exposure apparatus, wherein a beam irradiation area composed of pixels is defined as one pixel area, and a light amount distribution ratio of a laser beam to be irradiated is changed between adjacent pixel areas. 61. The laser beam exposure apparatus according to claim 60, wherein the number of the laser light sources is one. 62. The laser beam exposure apparatus according to claim 61, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio for each of the adjacent pixel areas. 63. The laser beam exposure apparatus according to claim 60, wherein a plurality of said laser light sources are provided. 64. The laser beam exposure apparatus according to claim 63, wherein the plurality of laser light sources having different light amount distribution ratios are switched between the adjacent pixels to irradiate the photosensitive material. 65. The laser beam exposure apparatus according to claim 64, wherein when the number of the laser light sources is two, the polarization state is controlled after two linearly polarized laser beams are combined by a polarization beam splitter. . 66. The pattern of the laser beam distribution ratio of the laser beam is regular.
6. The laser beam exposure apparatus according to claim 5. 67. The pattern according to claim 60, wherein a pattern of a light amount distribution ratio of the laser beam is random.
65. The laser beam exposure apparatus according to any one of items 65. 68. The laser beam exposure apparatus according to claim 60, wherein the pixel area and the adjacent pixel area are in a range where interference unevenness is invisible. 69. The laser beam exposure apparatus according to claim 63, wherein when there are a plurality of laser light sources, the light amount distribution ratio is changed when the laser beam is equal to or less than a predetermined light amount. 70. The laser beam exposure apparatus according to claim 59, wherein the predetermined light amount or less is equal to or less than a light amount level at which density unevenness due to interference can be visually recognized. 71. The laser beam exposure apparatus according to claim 60, wherein the photosensitive material is a material that easily interferes. 72. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer which is transmissive or translucent with respect to a wavelength to be used. In the case where the photosensitive material has optical anisotropy, the polarization state of the irradiation laser beam is controlled in accordance with the optical anisotropy, and one scanning line or a continuous scanning line irradiated by the laser beam is used. A beam irradiation area comprising a plurality of scanning lines defined as one linear area, and changing a temperature of a laser element of the laser light source for irradiation between the adjacent linear areas. Exposure equipment. 73. The laser beam exposure apparatus according to claim 72, wherein the number of the laser light sources is one. 74. The laser beam exposure apparatus according to claim 68, wherein a plurality of said laser light sources are provided. 75. The laser beam exposure apparatus according to claim 73, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element between the adjacent linear regions. 76. The laser beam exposure apparatus according to claim 74, wherein the plurality of laser light sources having different laser element temperatures are switched between the adjacent linear regions to irradiate the photosensitive material. 77. The laser beam exposure apparatus according to claim 74, wherein when two laser light sources are used, the polarization state is controlled after two linearly polarized laser beams are combined by a polarization beam splitter. . 78. The laser beam exposure apparatus according to claim 72, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 79. The laser beam according to claim 78, wherein the laser light source having a different temperature of the laser element is switched between the adjacent linear regions to irradiate the photosensitive material. Exposure equipment. 80. The laser beam exposure apparatus according to claim 79, wherein the modulation is performed for each of the linear regions. 81. A laser beam exposure apparatus according to claim 72, wherein a temperature control member is directly connected to said laser element. 82. The method according to claim 78, wherein the modulation is performed by injecting a light beam for temperature modulation having a different wavelength from that of the laser light source into the laser element and modulating a light amount of the light beam. 81. The laser beam exposure apparatus according to 79 or 80. 83. A laser beam exposure apparatus according to claim 78, wherein said modulation is a random temperature modulation. 84. The modulation according to claim 7, wherein the modulation is performed between binary temperatures such that the interference pattern is reversed.
83. The laser beam exposure apparatus according to 8, 79, 80 or 82. 85. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer which is transparent or translucent to the wavelength to be used. In the case where the photosensitive material has optical anisotropy, while controlling the polarization state of the irradiation laser beam according to the optical anisotropy, one pixel or a plurality of continuous pixels irradiated by the laser beam A laser beam exposure apparatus, wherein a beam irradiation area composed of pixels is defined as one pixel area, and the temperature of a laser element of the laser light source for irradiation is changed between adjacent pixel areas. 86. The laser beam exposure apparatus according to claim 85, wherein the number of the laser light sources is one. 87. The laser beam exposure apparatus according to claim 85, wherein a plurality of said laser light sources are provided. 88. The laser beam exposure apparatus according to claim 86, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element between the adjacent pixel areas. 89. The laser beam exposure apparatus according to claim 87, wherein the plurality of laser light sources having different temperatures of a laser element are switched for each of the adjacent pixel areas to irradiate the photosensitive material. 90. The laser beam exposure apparatus according to claim 89, wherein when two laser light sources are used, the polarization state is controlled after two linearly polarized laser beams are multiplexed by a polarization beam splitter. . 91. The laser beam exposure apparatus according to claim 85, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 92. The method according to claim 9, wherein the laser light source whose temperature of the laser element is different is switched for each of the adjacent pixel areas to irradiate the photosensitive material.
2. The laser beam exposure apparatus according to 1. 93. The laser beam exposure apparatus according to claim 91, wherein said modulation is performed for each of said pixel areas. 94. A laser beam exposure apparatus according to claim 85, wherein a temperature control member is directly connected to said laser element. 95. The modulation method according to claim 91, wherein the modulation is performed by injecting a temperature modulation light beam having a wavelength different from that of the laser light source into the laser element, and modulating the light amount of the light beam. 93. The laser beam exposure apparatus according to 92 or 93. 96. The laser beam exposure apparatus according to claim 91, wherein said modulation is a random temperature modulation. 97. The modulation according to claim 9, wherein the modulation is performed between binary temperatures such that the interference pattern is reversed.
95. The laser beam exposure apparatus according to 1, 92, 93 or 95. 98. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer which is transparent or translucent to a wavelength to be used. Irradiating the photosensitive material with the polarization state of the laser beam as circularly polarized light, and irradiating one beam or a beam irradiation area composed of a plurality of continuous scanning lines irradiated by the laser beam with one line A laser beam exposure apparatus, wherein a laser beam exposure ratio is defined between adjacent linear regions and a light amount distribution ratio of an irradiated laser beam is changed. 99. The laser beam exposure apparatus according to claim 98, wherein the number of said laser light sources is one. 100. The laser beam exposure apparatus according to claim 99, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio between the adjacent linear regions. 101. The laser beam exposure apparatus according to claim 98, wherein a plurality of said laser light sources are provided. 102. The laser beam exposure apparatus according to claim 101, wherein the plurality of laser light sources having different light amount distribution ratios are switched for each of the adjacent linear regions to irradiate the photosensitive material. 103. The laser beam according to claim 101, wherein when two laser light sources are used, the polarization state is changed to circular polarization after two linearly polarized laser beams are multiplexed by a polarization beam splitter. Exposure equipment. 104. A mirror disposed between the recording surface of the photosensitive material and a λ / 4 wavelength plate for transmitting the laser beam immediately after the multiplexing so as to change the polarization state to circularly polarized light. 104. The laser beam exposure apparatus according to claim 103, wherein all are dielectric film mirrors. 105. A λ / 4 wavelength plate through which the laser beam is transmitted immediately after the multiplexing is arranged in order to change the polarization state to circularly polarized light, and one of the leading mirrors to the polygon metal mirror is a metal mirror. 104. The laser beam exposure apparatus according to claim 103, wherein the other mirror is a dielectric film mirror, and a beam incident angle on the metal routing mirror is made equal to a beam center incident angle on the polygon metal mirror. . 106. In order to change the polarization state to circularly polarized light, the output beam from the polygon mirror is in a linear polarization state parallel or perpendicular to the beam scanning direction, and the light beam between the polygon mirror and the recording surface of the photosensitive material is The laser beam exposure apparatus according to claim 103, wherein a λ / 4 wavelength plate extending in the scanning direction is inserted into the laser beam exposure apparatus. 107. The method according to claim 98, wherein a pattern of a light amount distribution ratio of said laser beam is regular.
107. The laser beam exposure apparatus according to any one of items 106. 108. The pattern of the light amount distribution ratio of the laser beam is random.
107. The laser beam exposure apparatus according to any one of -106. The laser beam exposure according to any one of claims 98 to 108, wherein the linear region and the adjacent linear region are in a range where interference unevenness is invisible. apparatus. 110. The light-sensitive material according to claim 98, wherein the light-sensitive material is a material that easily interferes.
Item 6. A laser beam exposure apparatus according to Item 1. 111. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer which is transparent or translucent to the wavelength to be used. And irradiating the photosensitive material with the polarization state of the laser beam as circularly polarized light, and defining a beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam as one pixel area, A laser beam exposure apparatus, wherein a light beam distribution ratio of a laser beam to be irradiated is changed between adjacent pixel areas. 112. The laser beam exposure apparatus according to claim 111, wherein the number of the laser light sources is one. 113. The laser beam exposure apparatus according to claim 112, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio for each of the adjacent pixel areas. 114. The laser beam exposure apparatus according to claim 111, wherein a plurality of said laser light sources are provided. 115. The laser beam exposure apparatus according to claim 114, wherein said plurality of laser light sources having different light quantity distribution ratios are switched between said adjacent pixels to irradiate said photosensitive material. 116. The laser beam according to claim 114, wherein when two laser light sources are used, the polarization state is changed to circular polarization after two linearly polarized laser beams are multiplexed by a polarization beam splitter. Exposure equipment. 117. A mirror provided with a λ / 4 wavelength plate through which the laser beam is transmitted immediately after the multiplexing so as to change the polarization state to circularly polarized light, and a mirror disposed between the λ / 4 wavelength plate and the recording surface of the photosensitive material. 116. The laser beam exposure apparatus according to claim 116, wherein all of them are dielectric film mirrors. 118. A λ / 4 wavelength plate through which the laser beam is transmitted immediately after the multiplexing is arranged in order to change the polarization state to circularly polarized light, and one of the leading mirrors to the polygon metal mirror is a metal mirror. 120. The laser beam exposure apparatus according to claim 119, wherein the other mirror is a dielectric film mirror, and a beam incident angle on the metal routing mirror is made equal to a beam center incident angle on the polygon metal mirror. . 119. In order to change the polarization state to circular polarization, the beam emitted from the polygon mirror is in a linear polarization state parallel or perpendicular to the beam scanning direction, and a gap between the polygon mirror and the recording surface of the photosensitive material. 117. The laser beam exposure apparatus according to claim 116, wherein a λ / 4 wavelength plate extending in the scanning direction is inserted into the laser beam exposure apparatus. 120. The pattern of the laser beam distribution ratio of the laser beam is regular.
120. The laser beam exposure apparatus according to any one of items -119. 121. The pattern of the laser beam distribution ratio of the laser beam is random.
120. The laser beam exposure apparatus according to any one of items 1 to 119. 122. The laser beam exposure apparatus according to claim 111, wherein the pixel area and the adjacent pixel area are in a range where interference unevenness is invisible. 123. The laser beam exposure apparatus according to claim 111, wherein said photosensitive material is a material which easily interferes. 124. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer which is transparent or translucent to a wavelength to be used. Irradiating the photosensitive material with the polarization state of the laser beam as circularly polarized light, and irradiating one beam or a beam irradiation area composed of a plurality of continuous scanning lines irradiated by the laser beam with one line A laser beam exposure apparatus, wherein a temperature of a laser element of the laser light source for irradiation is changed between adjacent linear regions. 125. The laser beam exposure apparatus according to claim 124, wherein the number of the laser light sources is one. 126. The laser beam exposure apparatus according to claim 124, wherein a plurality of said laser light sources are provided. 127. The laser beam exposure apparatus according to claim 125, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element between the adjacent linear regions. 128. The light-sensitive material according to claim 126, wherein the plurality of laser light sources having different temperatures of the laser element are switched between the adjacent linear regions to irradiate the photosensitive material.
3. The laser beam exposure apparatus according to claim 1. 129. The laser beam according to claim 126, wherein when two laser light sources are used, the polarization state is changed to circular polarization after two linearly polarized laser beams are combined by a polarization beam splitter. Exposure equipment. 130. A mirror arranged between the recording surface of the photosensitive material and a λ / 4 wavelength plate for transmitting the laser beam immediately after the multiplexing so as to change the polarization state to circularly polarized light. 129. The laser beam exposure apparatus according to claim 129, wherein all are dielectric mirrors. 131. A λ / 4 wave plate through which the laser beam is transmitted immediately after the multiplexing is arranged to change the polarization state to circularly polarized light, and one of the leading mirrors to the polygon metal mirror is a metal mirror. 129. The laser beam exposure apparatus according to claim 129, wherein the other mirror is a dielectric film mirror, and a beam incident angle on the metal routing mirror is made equal to a beam center incident angle on the polygon metal mirror. . 132. In order to change the polarization state to circularly polarized light, an output beam from a polygon mirror is in a linear polarization state parallel or perpendicular to a beam scanning direction, and a light beam is output between the polygon mirror and a recording surface of the photosensitive material. 129. The laser beam exposure apparatus according to claim 129, wherein a λ / 4 wavelength plate extending in the scanning direction is inserted into the laser beam exposure apparatus. 133. The laser beam exposure apparatus according to claim 124, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 134. A laser beam according to claim 133, wherein said laser light source having a different temperature of said laser element is switched between said adjacent linear regions to irradiate said photosensitive material. Exposure equipment. 135. The laser beam exposure apparatus according to claim 133, wherein the modulation is performed for each of the linear regions. 136. The laser device according to claim 126, wherein a temperature control member is directly connected to said laser element.
35. The laser beam exposure apparatus according to any one of 35. 137. The modulation method according to claim 133, wherein the modulation is performed by injecting a light beam for temperature modulation having a different wavelength from that of the laser light source into the laser element, and modulating the light amount of the light beam. 135. The laser beam exposure apparatus according to 134 or 135. 138. The laser beam exposure apparatus according to claim 133, wherein said modulation is a random temperature modulation. 139. The laser beam exposure apparatus according to claim 133, wherein said modulation modulates between binary temperatures at which an interference pattern is reversed. 140. A laser beam exposure apparatus that irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer that is transparent or translucent to the wavelength to be used. And irradiating the photosensitive material with the polarization state of the laser beam as circularly polarized light, and defining a beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam as one pixel area, A laser beam exposure apparatus, wherein the temperature of a laser element of the laser light source for irradiation is changed between the adjacent pixel areas. 141. The laser beam exposure apparatus according to claim 140, wherein the number of the laser light sources is one. 142. The laser beam exposure apparatus according to claim 140, wherein a plurality of said laser light sources are provided. 143. The laser beam exposure apparatus according to claim 141, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element for each of the adjacent pixel areas. 144. The laser beam exposure apparatus according to claim 142, wherein the plurality of laser light sources having different temperatures of the laser elements are switched between the adjacent pixel areas to irradiate the photosensitive material. 145. The laser beam according to claim 142, wherein when two laser light sources are used, the polarization state is changed to circular polarization after two linearly polarized laser beams are multiplexed by a polarization beam splitter. Exposure equipment. 146. A mirror arranged between the recording surface of the photosensitive material and a λ / 4 wavelength plate for transmitting the laser beam immediately after the multiplexing so as to change the polarization state to circularly polarized light. 146. The laser beam exposure apparatus according to claim 145, wherein all of them are dielectric film mirrors. 147. A λ / 4 wave plate through which the laser beam is transmitted immediately after the multiplexing is arranged to change the polarization state to circularly polarized light, and one of the leading mirrors up to the polygon metal mirror is a metal mirror. 146. The laser beam exposure apparatus according to claim 145, wherein the other mirror is a dielectric film mirror, and a beam incident angle on the metal routing mirror is made equal to a beam center incident angle on the polygon metal mirror. . 148. In order to change the polarization state to circularly polarized light, the beam emitted from the polygon mirror is in a linear polarization state parallel or perpendicular to the beam scanning direction, and the light beam is transmitted between the polygon mirror and the recording surface of the photosensitive material. 146. The laser beam exposure apparatus according to claim 145, wherein a 了 / 4 wavelength plate extending in the scanning direction is inserted into the laser beam exposure apparatus. 149. The laser beam exposure apparatus according to any one of claims 140 to 148, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 150. The laser beam exposure apparatus according to claim 149, wherein the laser light source having a different temperature of the laser element is switched for each of the adjacent pixel areas to irradiate the photosensitive material. . 151. The laser beam exposure apparatus according to claim 149, wherein the modulation is performed for each pixel area. 152. A temperature control member is directly coupled to said laser element.
52. The laser beam exposure apparatus according to any one of 51. 153. The apparatus according to claim 149, wherein the modulation is performed by injecting a light beam for temperature modulation having a different wavelength from that of the laser light source into the laser element and modulating a light amount of the light beam. 150. The laser beam exposure apparatus according to 150 or 151. 154. The laser beam exposure apparatus according to claim 149, 150, 151 or 153, wherein the modulation is a random temperature modulation. 155. The laser beam exposure apparatus according to claim 149, 150, 151 or 153, wherein the modulation modulates between binary temperatures such that the interference pattern is reversed. 156. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer which is transparent or translucent to a wavelength to be used. When the photosensitive material has optical anisotropy and the direction of the axis of the optical anisotropy is constant, the polarization direction of the linearly polarized light of the laser beam is set to the axis of the optical anisotropy. And a beam irradiation area formed by a single scanning line or a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, and a region between the adjacent linear regions is defined. A laser beam exposure apparatus, wherein a light amount distribution ratio of a laser beam to be irradiated is changed. 157. The laser beam exposure apparatus according to claim 156, wherein the number of the laser light sources is one. 158. The laser beam exposure apparatus according to claim 157, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio for each of the adjacent linear regions. 159. The laser beam exposure apparatus according to claim 156, wherein a plurality of said laser light sources are provided. 160. The laser beam exposure apparatus according to claim 159, wherein said plurality of laser light sources having different light amount distribution ratios are switched for each of said adjacent linear regions to irradiate said photosensitive material. 161. When the axis of the optical anisotropy is parallel or perpendicular to a horizontal plane to tilt the polarization direction of the linearly polarized light of the laser beam by 45 degrees with respect to the axis of the optical anisotropy, 160. The laser beam exposure apparatus according to claim 159, wherein the light source unit is inclined by 45 degrees with respect to a horizontal plane. 162. The method according to claim 156, wherein a pattern of a light distribution ratio of the laser beam is regular.
167. The laser beam exposure apparatus according to any one of Items 161 to 161. 163. The pattern of the laser beam distribution ratio of the laser beam is random.
162. The laser beam exposure apparatus according to any one of items 6 to 161. 164. The laser beam exposure according to any one of claims 156 to 163, wherein the linear region and the adjacent linear region are in a range where interference unevenness is invisible. apparatus. 165. The laser beam exposure apparatus according to any one of claims 156 to 164, wherein the photosensitive material is a material that easily interferes. 166. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer which is transmissive or semi-transmissive for a wavelength to be used. When the photosensitive material has optical anisotropy and the direction of the axis of the optical anisotropy is constant, the polarization direction of the linearly polarized light of the laser beam is set to the axis of the optical anisotropy. A 45-degree tilt with respect to the laser beam, a beam irradiation area composed of one pixel or a plurality of continuous pixels irradiated by the laser beam is defined as one pixel area, and a laser beam to be irradiated between adjacent pixel areas is defined as one pixel area. A laser beam exposure apparatus characterized by changing a light distribution ratio. 167. The laser beam exposure apparatus according to claim 166, wherein the number of the laser light sources is one. 168. The laser beam exposure apparatus according to claim 167, wherein the one laser light source irradiates the photosensitive material by switching a light amount distribution ratio for each of the adjacent pixel areas. 169. The laser beam exposure apparatus according to claim 166, wherein a plurality of the laser light sources are provided. 170. The laser beam exposure apparatus according to claim 169, wherein said plurality of laser light sources having different light amount distribution ratios are switched for each of said adjacent pixels to irradiate said photosensitive material. 171. The laser light source unit is rotated 45 degrees with respect to the optically anisotropic axis to incline the polarization direction of the linearly polarized light of the laser beam by 45 degrees with respect to the optically anisotropic axis. 172. The laser beam exposure apparatus according to claim 166, wherein the laser beam exposure apparatus is inclined by an angle. 172. The method according to claim 166, wherein a pattern of a light amount distribution ratio of said laser beam is regular.
172. The laser beam exposure apparatus according to any one of items 171 to 171. 173. The pattern of the laser beam distribution ratio of the laser beam is random.
172. The laser beam exposure apparatus according to any one of 6 to 171. 174. The laser beam exposure apparatus according to any one of claims 166 to 173, wherein the pixel area and the adjacent pixel area are in a range where interference unevenness is invisible. 175. The laser beam exposure apparatus according to any one of claims 166 to 174, wherein said photosensitive material is a material that easily interferes. 176. A laser beam exposure apparatus which irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer which is transmissive or semi-transmissive for a wavelength to be used. When the photosensitive material has optical anisotropy and the direction of the axis of the optical anisotropy is constant, the polarization direction of the linearly polarized light of the laser beam is set to the axis of the optical anisotropy. And a beam irradiation area formed by a single scanning line or a plurality of continuous scanning lines irradiated by the laser beam is defined as one linear region, and a region between the adjacent linear regions is defined. A laser beam exposure apparatus for changing the temperature of a laser element of the laser light source for irradiation. 177. The apparatus according to claim 176, wherein the number of the laser light sources is one. 178. The laser beam exposure apparatus according to claim 176, wherein a plurality of said laser light sources are provided. 179. The laser beam exposure apparatus according to claim 177, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element between the adjacent linear regions. 180. The method according to claim 178, wherein the plurality of laser light sources having different temperatures of the laser elements are switched between the adjacent linear regions to irradiate the photosensitive material.
3. The laser beam exposure apparatus according to claim 1. 181. In order to incline the polarization direction of the linearly polarized light of the laser beam by 45 degrees with respect to the axis of the optical anisotropy, the laser light source unit is rotated by 45 degrees with respect to the axis of the optical anisotropy. 177. The laser beam exposure apparatus according to claim 176, wherein the laser beam exposure apparatus is inclined by an angle. 182. The laser beam exposure apparatus according to claim 176, wherein the photosensitive material is exposed while modulating the temperature of the laser element over a predetermined range. 183. The laser beam according to claim 182, wherein the laser light source having a different temperature of the laser element is switched between the adjacent linear regions to irradiate the photosensitive material. Exposure equipment. 184. The laser beam exposure apparatus according to claim 182, wherein the modulation is performed for each of the linear regions. 185. The apparatus according to claim 176, wherein a temperature control member is directly connected to said laser element.
85. The laser beam exposure apparatus according to any one of items 84. 186. The apparatus according to claim 182, wherein the modulation is performed by injecting a light beam for temperature modulation having a wavelength different from that of the light source into the laser element and modulating the light amount of the light beam. Or the laser beam exposure apparatus according to 184. 187. The laser beam exposure apparatus according to claim 182, wherein the modulation is a random temperature modulation. 188. The laser beam exposure apparatus according to claim 182, wherein said modulation modulates between binary temperatures at which an interference pattern is reversed. 189. A laser beam exposure apparatus that irradiates a laser beam from a laser light source to a photosensitive material having at least one support layer or photosensitive layer that is transmissive or semi-transmissive with respect to a wavelength to be used. When the photosensitive material has optical anisotropy and the direction of the axis of the optical anisotropy is constant, the polarization direction of the linearly polarized light of the laser beam is set to the axis of the optical anisotropy. A laser irradiation area defined by one pixel irradiated by the laser beam or a beam irradiation area composed of a plurality of continuous pixels is defined as one pixel area, and irradiation is performed between adjacent pixel areas. A laser beam exposure apparatus, wherein a temperature of a laser element of a light source is changed. 190. The laser beam exposure apparatus according to claim 189, wherein the number of the laser light sources is one. 191. The laser beam exposure apparatus according to claim 189, wherein the number of the laser light sources is plural. 192. The laser beam exposure apparatus according to claim 190, wherein the one laser light source irradiates the photosensitive material by switching the temperature of a laser element between the adjacent pixel areas. 193. The laser beam exposure apparatus according to claim 191, wherein the plurality of laser light sources having different laser element temperatures are switched between the adjacent pixel areas to irradiate the photosensitive material. 194. The laser light source unit is tilted by 45 degrees with respect to the optically anisotropic axis to incline the polarization direction of the linearly polarized light of the laser beam by 45 degrees with respect to the optically anisotropic axis. 189. The laser beam exposure apparatus according to claim 189, wherein the laser beam exposure apparatus is inclined by an angle. 195. The laser beam exposure apparatus according to claim 189, wherein the exposure is performed on the photosensitive material while modulating the temperature of the laser element over a predetermined range. 196. The laser beam exposure apparatus according to claim 195, wherein the laser light source in which the temperature of the laser element is different is switched for each of the adjacent pixel areas to irradiate the photosensitive material. . 197. The laser beam exposure apparatus according to claim 195 or 196, wherein the modulation is performed for each pixel area. 198. The apparatus according to claim 189, wherein a temperature control member is directly connected to said laser element.
97. The laser beam exposure apparatus according to any one of items 97. 199. The modulation method according to claim 195, wherein the modulation is performed by injecting a light beam for temperature modulation having a different wavelength from that of the light source into the laser element and modulating a light amount of the light beam. Or a laser beam exposure apparatus according to 197. 200. The laser beam exposure apparatus according to claim 195, 196, 197 or 199, wherein said modulation is a random temperature modulation. 201. The laser beam exposure apparatus according to claim 195, 196, 197 or 199, wherein the modulation modulates between binary temperatures such that the interference pattern is reversed. 202. The laser beam exposure apparatus according to claim 1, wherein the photosensitive material is a silver halide photosensitive material. 203. A laser beam exposure apparatus for irradiating a laser beam from a laser light source to a photosensitive material having at least one support layer or at least one photosensitive layer that is transparent or translucent to the wavelength to be used. Irradiating the photosensitive material with the polarization state of the laser beam as circularly polarized light, and irradiating one beam or a beam irradiation area composed of a plurality of continuous scanning lines irradiated by the laser beam with one line A laser beam exposure apparatus, wherein a laser beam exposure apparatus is defined as a linear region, and changes a light amount-wavelength characteristic and a light amount distribution ratio of a laser beam to be irradiated between adjacent linear regions. 204. The laser beam exposure apparatus according to claim 203, wherein the light amount-wavelength characteristic is changed by changing a temperature of a laser element of the laser light source. 205. A laser beam characterized by modulating a wavelength of a laser beam emitted from the laser light source by injecting a laser beam of a wavelength different from the wavelength of the laser light source into a laser element of the laser light source. Wavelength modulation method. 206. The laser beam wavelength modulation method according to claim 205, wherein the light beam of another wavelength is injected from a light source into the laser element via a light reflecting mirror. 207. A laser beam, wherein a wavelength of a laser beam emitted from the laser light source is modulated by injecting a light beam having a wavelength different from the wavelength of the laser light source into a laser element of the laser light source. Wavelength modulator. 208. The laser beam wavelength modulation device according to claim 207, wherein the light beam of another wavelength is injected from a light source into the laser element via a light reflecting mirror.