JP2001250839A - Device for manufacturing semiconductor mounted parts, semiconductor mounted finished product and device for manufacturing the same - Google Patents

Device for manufacturing semiconductor mounted parts, semiconductor mounted finished product and device for manufacturing the same

Info

Publication number
JP2001250839A
JP2001250839A JP2000063686A JP2000063686A JP2001250839A JP 2001250839 A JP2001250839 A JP 2001250839A JP 2000063686 A JP2000063686 A JP 2000063686A JP 2000063686 A JP2000063686 A JP 2000063686A JP 2001250839 A JP2001250839 A JP 2001250839A
Authority
JP
Japan
Prior art keywords
semiconductor component
manufacturing
semiconductor
component
contact area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000063686A
Other languages
Japanese (ja)
Other versions
JP4209574B2 (en
Inventor
Norito Tsukahara
法人 塚原
Naoshi Akiguchi
尚士 秋口
Hideki Miyagawa
秀規 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000063686A priority Critical patent/JP4209574B2/en
Priority to DE60042787T priority patent/DE60042787D1/en
Priority to PCT/JP2000/004699 priority patent/WO2001006558A1/en
Priority to EP00944429A priority patent/EP1204136B1/en
Priority to US10/031,000 priority patent/US6780668B1/en
Publication of JP2001250839A publication Critical patent/JP2001250839A/en
Priority to US10/736,568 priority patent/US7090482B2/en
Application granted granted Critical
Publication of JP4209574B2 publication Critical patent/JP4209574B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]

Abstract

PROBLEM TO BE SOLVED: To provide a device for manufacturing semiconductor mounted parts, a device for manufacturing a semiconductor mounded finished product, and a semiconductor mounted finished product which have high quality and high productivity and are inexpensive. SOLUTION: After a semiconductor element 114 is inserted into a substrate 122 by a semiconductor parts press-in device 173, a contact area increasing part 115 is formed in a bump 13 of the semiconductor element by contact area increasing devices 150 and 154, and a circuit pattern 116 is formed in the circuit connection part provided with the contact area increasing part so as to complete mounting. Therefore, no anisotropic conductive sheet or anisotropic conductive particle is used, so that the productivity can be greatly improved and the cost also reduced compared with conventional one. In addition, since no disconnection of the circuit pattern occurs not like in the conventional ways, and high-quality semiconductor mounted parts and a semiconductor mounted finished product can be produced stably.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば非接触IC
カードを製造する場合のように導電性ペーストにてなる
回路パターンに設けられた接続パッドにICチップを電
気的に接続する場合にて使用される、ICチップ等の電
子部品を基材に実装して半導体部品実装済部品を製造す
る半導体部品実装済部品の製造装置、該製造装置にて製
造される半導体部品実装済部品を有する半導体部品実装
済完成品の製造装置、及び該半導体部品実装済完成品製
造装置にて製造される半導体部品実装済完成品に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-contact IC
An electronic component such as an IC chip, which is used when an IC chip is electrically connected to connection pads provided on a circuit pattern made of a conductive paste as in the case of manufacturing a card, is mounted on a base material. Device for manufacturing semiconductor component mounted components by manufacturing semiconductor component mounted components, manufacturing device for completed semiconductor component mounted products having semiconductor component mounted components manufactured by the manufacturing device, and completed semiconductor component mounted products The present invention relates to a finished product on which a semiconductor component is mounted, which is manufactured by a product manufacturing apparatus.

【0002】[0002]

【従来の技術】非接触ICカードを例に取り、従来の半
導体部品実装済完成品の製造方法について、図20〜図
27を参照しながら以下に説明する。従来、コイルとI
Cチップとを内蔵し、該コイルを介して外部とのデータ
の授与を行なう非接触ICカードを製造する際におい
て、上記コイルの形成方法としては、銅にてなる巻線コ
イルを用いる方法や、銀ペースト等の導体ペーストを印
刷して形成する方法や、銅箔等の金属箔をエッチングし
てコイルを形成する方法等が用いられており、なかでも
上記導体ペーストを印刷して回路パターン及びコイルを
形成する方法が盛んになっている。
2. Description of the Related Art A non-contact IC card will be described as an example, and a conventional method of manufacturing a completed product with a semiconductor component mounted thereon will be described below with reference to FIGS. Conventionally, coils and I
When manufacturing a non-contact IC card having a built-in C chip and transmitting data to and from the outside through the coil, the method of forming the coil includes a method using a coil wound from copper, A method of printing and forming a conductor paste such as a silver paste, a method of etching a metal foil such as a copper foil to form a coil, and the like are used. The method of forming is prosperous.

【0003】図20〜図27は従来の非接触ICカード
及びその製造方法を示す。図20に示すように、従来の
非接触ICカードは、第1基材1aに導電性ペーストに
てコイルパターン2が形成され、このコイルパターン2
の外周端3aに設けた接続パッド6、及びコイルパター
ン2の内周端3bに設けた接続パッド6のそれぞれがI
Cチップ4の電極部と電気的に接続される構成となって
いる。その製造工程は、図21に示すように、まずステ
ップ(図内では「S」にて示す)1では、第1基材1a
の表面に導電性ペーストにてコイルパターン2を含む回
路パターンを印刷する。上記導電性ペーストとしては、
銀ペーストが好適に使用される。上記導電性ペーストの
印刷は、スクリーン印刷やオフセット印刷やグラビア印
刷等によって行われ、例えばスクリーン印刷の場合、1
65メッシュ/インチ、乳剤厚み10μmのマスクを介
して導電性ペーストを第1基材1aに印刷し、導体厚み
約30μmの回路パターンを形成する。上記第1基材1
a及び後述の第2基材2bには、ポリエチレンテレフタ
レート、塩化ビニル、ポリカーボネイト、アクリロニト
リルブタジエンスチレン等からなる厚さ0.1〜0.5
mm程度の熱可塑性樹脂が用いられる。
FIGS. 20 to 27 show a conventional non-contact IC card and a method of manufacturing the same. As shown in FIG. 20, in a conventional non-contact IC card, a coil pattern 2 is formed of a conductive paste on a first base material 1a.
The connection pad 6 provided on the outer peripheral end 3a of the coil pattern 2 and the connection pad 6 provided on the inner peripheral end 3b of the coil pattern 2
It is configured to be electrically connected to the electrode part of the C chip 4. In the manufacturing process, as shown in FIG. 21, first, in step (indicated by “S” in the figure) 1, the first base material 1 a
A circuit pattern including the coil pattern 2 is printed on the surface of the substrate with a conductive paste. As the conductive paste,
Silver paste is preferably used. The printing of the conductive paste is performed by screen printing, offset printing, gravure printing, or the like.
A conductive paste is printed on the first base material 1a through a mask of 65 mesh / inch and an emulsion thickness of 10 μm to form a circuit pattern with a conductor thickness of about 30 μm. The first base material 1
a and a second base material 2b described later have a thickness of 0.1 to 0.5 made of polyethylene terephthalate, vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, or the like.
A thermoplastic resin of about mm is used.

【0004】ステップ2では、上記印刷方法により第1
基材1a上に形成した上記導電性ペーストにてなる上記
回路パターンを120℃の温度で10分間加熱して上記
導電性ペーストを硬化させる。ステップ3では、図22
に示すように、上記回路パターンにおける上記外周端3
aや内周端3bに設けられた接続パッド6に異方導電性
シート9を貼り付ける。該異方導電性シートとは、金属
粒子を含有する樹脂シートであり、加熱、加圧されるこ
とで上記金属粒子と上記接続パッド6とを電気的に接続
する。ステップ4では、異方導電性シート9を100℃
で5秒加熱して、接続パッド6に仮圧着する。ステップ
5では、仮圧着した異方導電性シート9に半導体素子4
やコンデンサ等の部品をマウントする。半導体素子の実
装面には、図23に示すように半導体素子4上の電極パ
ッド7にバンプ10が形成されており、図24に示すよ
うにバンプ10と接続パッド6とが異方導電性シート9
を介して電気的に接続される。尚、バンプ10は、ワイ
ヤボンディング法やメッキ法、具体的には半田、金、
銀、銅等を用いたメッキ法により、半導体素子4の電極
パッド7上に形成される。
[0004] In step 2, the first printing method is used.
The circuit pattern made of the conductive paste formed on the base material 1a is heated at a temperature of 120 ° C. for 10 minutes to cure the conductive paste. In step 3, FIG.
As shown in FIG.
Then, an anisotropic conductive sheet 9 is attached to the connection pad 6 provided on the inner peripheral end 3b. The anisotropic conductive sheet is a resin sheet containing metal particles, and electrically connects the metal particles and the connection pads 6 by being heated and pressed. In Step 4, the anisotropic conductive sheet 9 is heated to 100 ° C.
For 5 seconds, and temporarily bonded to the connection pad 6. In step 5, the semiconductor element 4 is placed on the temporarily compressed anisotropic conductive sheet 9.
And components such as capacitors. On the mounting surface of the semiconductor element, bumps 10 are formed on the electrode pads 7 on the semiconductor element 4 as shown in FIG. 23, and as shown in FIG. 24, the bumps 10 and the connection pads 6 are anisotropically conductive sheets. 9
Are electrically connected via The bump 10 is formed by a wire bonding method or a plating method, specifically, solder, gold,
It is formed on the electrode pad 7 of the semiconductor element 4 by a plating method using silver, copper, or the like.

【0005】ステップ6では、200℃の温度で30秒
間加熱して、図25に示すように異方導電性シートを硬
化して、半導体素子4を本圧着する。尚、第1基材1a
にガラスエポキシ基板やセラミック基板を用いた一般的
な半導体実装においては、このステップ6までで半導体
素子の実装は完了する。そして、ステップ7では、第1
基材1aに第2基材1bを貼り合わせてラミネート処理
することにより、図26に示すように、接続パッド6と
バンプ10とが異方導電性ペースト9を介して電気的に
接続されたICカードが得られる。図26にて、5はコ
イルパターン2に並列接続されるコンデンサを示す。
In step 6, the semiconductor element 4 is heated at a temperature of 200 ° C. for 30 seconds to harden the anisotropic conductive sheet as shown in FIG. In addition, the first substrate 1a
In a general semiconductor mounting using a glass epoxy substrate or a ceramic substrate, the mounting of the semiconductor element is completed by this step 6. Then, in step 7, the first
An IC in which the connection pads 6 and the bumps 10 are electrically connected via the anisotropic conductive paste 9 as shown in FIG. 26 by laminating the second base material 1b to the base material 1a and laminating the same. You get a card. In FIG. 26, reference numeral 5 denotes a capacitor connected in parallel to the coil pattern 2.

【0006】[0006]

【発明が解決しようとする課題】しかし、上述した従来
の半導体部品実装済完成品製造方法、及び該製造方法に
て製造される、半導体部品実装済完成品としての非接触
ICカードの構成では、以下の問題があった。上記第1
基材1aや第2基材1bには、一般的にポリエチレンテ
レフタレートや塩化ビニル等の安価な熱可塑性樹脂が使
用されている。一方、従来の製造工程では、上記ステッ
プ6において異方導電性シート9を介して半導体素子4
を本圧着する際の温度が200℃以上と高温である為、
耐熱性に劣る第1基材1aや第2基材1bが劣化し易い
という問題がある。又、異方導電性シート9を用いて半
導体素子4等の部品を第1基材1aに固定する為、異方
導電性シート9の第1基材1aへの仮圧着及び本加圧工
程が必要となる。よって、工程数が多くなり生産性が悪
くコスト高になるという問題がある。
However, in the above-described conventional method for manufacturing a completed product with semiconductor components mounted thereon and the configuration of a non-contact IC card as a completed product with semiconductor components mounted manufactured by the manufacturing method, There were the following problems. The first
In general, inexpensive thermoplastic resins such as polyethylene terephthalate and vinyl chloride are used for the substrate 1a and the second substrate 1b. On the other hand, in the conventional manufacturing process, in step 6 described above, the semiconductor element 4 is placed via the anisotropic conductive sheet 9.
Because the temperature at the time of final pressure bonding is as high as 200 ° C or more,
There is a problem that the first base material 1a and the second base material 1b having poor heat resistance are easily deteriorated. In addition, since the components such as the semiconductor element 4 are fixed to the first base material 1a using the anisotropic conductive sheet 9, the provisional pressure bonding and the main pressing process of the anisotropic conductive sheet 9 to the first base material 1a are performed. Required. Therefore, there is a problem that the number of processes is increased, productivity is reduced, and costs are increased.

【0007】又、異方導電性シート9の代わりに異方導
電性粒子を用いた場合も同様である。又、上記ステップ
7においてラミネート処理する際に、半導体素子4が加
熱、加圧される為、図27に示すように、半導体素子4
が第1基材1aに沈み込み、導体ペーストによる回路パ
ターン6が湾曲した形に変形してしまう。その結果、回
路パターン断線の可能性が高く、動作不良の不具合が発
生する。本発明はこのような問題点を解決する為になさ
れたもので、高品質、高生産性で安価な、半導体部品実
装済部品の製造装置、半導体部品実装済完成品の製造装
置、及び半導体部品実装済完成品を提供することを目的
とする。
[0007] The same applies to the case where anisotropic conductive particles are used instead of the anisotropic conductive sheet 9. Further, since the semiconductor element 4 is heated and pressurized during the laminating process in step 7, as shown in FIG.
Sinks into the first base material 1a, and the circuit pattern 6 made of the conductive paste is deformed into a curved shape. As a result, the possibility of disconnection of the circuit pattern is high, and a malfunction such as a malfunction occurs. The present invention has been made in order to solve such problems, and is a high-quality, high-productivity, inexpensive device for manufacturing semiconductor-part-mounted components, a device for manufacturing completed semiconductor-component-mounted products, and a semiconductor component. The purpose is to provide mounted finished products.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に本発明は以下のように構成する。即ち、本発明の第1
態様である半導体部品実装済部品の製造装置は、半導体
部品の回路接続部に接触して上記半導体部品と電気的に
接続され導電性ペーストにて形成される回路パターンを
基材のパターン形成面上に形成することで当該回路パタ
ーンへの上記半導体部品の実装を行なう半導体部品実装
済部品の製造装置において、上記基材に上記半導体部品
を挿入するとともに、上記パターン形成面に上記半導体
部品の上記回路接続部を露出させ又は非露出な状態で近
接させる半導体部品押圧装置と、上記パターン形成面に
露出又は近接した上記回路接続部に対して、上記回路パ
ターンと上記回路接続部との接触面積を増加させる接触
面積増加部を形成する接触面積増加装置と、を備えたこ
とを特徴とする。
To achieve the above object, the present invention is configured as follows. That is, the first of the present invention
The manufacturing apparatus for a semiconductor component-mounted component according to an aspect, a circuit pattern formed of a conductive paste which is electrically connected to the semiconductor component by contacting a circuit connecting portion of the semiconductor component on a pattern forming surface of a base material. A semiconductor component-mounted component manufacturing apparatus that mounts the semiconductor component on the circuit pattern by forming the semiconductor component on the circuit pattern, and inserts the semiconductor component into the base material and forms the circuit of the semiconductor component on the pattern formation surface. The contact area between the circuit pattern and the circuit connecting portion is increased with respect to the semiconductor component pressing device that exposes or non-exposes the connecting portion and the circuit connecting portion that is exposed or close to the pattern forming surface. A contact area increasing device for forming a contact area increasing portion to be contacted.

【0009】又、上記接触面積増加装置は、上記回路接
続部に接触して、又は上記回路接続部近傍の上記パター
ン形成面に接触して上記接触面積増加部を形成する増加
部形成部材と、上記増加部形成部材を上記回路接続部又
は上記回路接続部近傍の上記パターン形成面に押圧する
増加部形成部材用押圧装置とを有することもできる。
Further, the contact area increasing device includes an increasing portion forming member that forms the contact area increasing portion by contacting the circuit connecting portion or by contacting the pattern forming surface near the circuit connecting portion. A pressing device for an increasing portion forming member that presses the increasing portion forming member against the circuit connecting portion or the pattern forming surface near the circuit connecting portion may be provided.

【0010】又、上記増加部形成部材は、円筒形状にて
なり、上記増加部形成部材用押圧装置による押圧動作に
て上記回路接続部を成形して上記回路接続部に上記接触
面積増加部としての突部を形成することもできる。
The increasing portion forming member is formed in a cylindrical shape, and the circuit connecting portion is formed by a pressing operation of the increasing portion forming member pressing device to form the contact area increasing portion on the circuit connecting portion. May be formed.

【0011】又、上記増加部形成部材は、先端に凹凸部
を有し、上記増加部形成部材用押圧装置による押圧動作
にて上記回路接続部を成形して上記回路接続部に上記接
触面積増加部としての凹凸部を形成することもできる。
The increasing portion forming member has an uneven portion at the tip, and the circuit connecting portion is formed by a pressing operation of the increasing portion forming member pressing device to increase the contact area on the circuit connecting portion. An uneven portion as a portion can also be formed.

【0012】又、上記増加部形成部材は、円筒形状にて
なり、上記増加部形成部材用押圧装置による押圧動作に
て上記回路接続部近傍の上記パターン形成面を押圧して
上記回路接続部近傍に接触面積増加用溝を形成して上記
回路接続部を上記基材から露出させることもできる。
The increasing portion forming member is formed in a cylindrical shape, and the pattern forming surface near the circuit connecting portion is pressed by the pressing operation of the increasing portion forming member pressing device so as to be in the vicinity of the circuit connecting portion. The circuit connecting portion may be exposed from the base material by forming a contact area increasing groove on the base member.

【0013】又、本発明の第2態様である半導体部品実
装済完成品の製造装置は、上記第1態様の半導体部品実
装済部品の製造装置と、上記半導体部品実装済部品の製
造装置にて製造された半導体部品実装済部品を封止する
封止装置と、を備えたことを特徴とする。
[0013] Further, a second aspect of the present invention relates to an apparatus for manufacturing a finished product with a semiconductor component mounted thereon, wherein the apparatus for manufacturing a component with a mounted semiconductor component according to the first aspect and the apparatus for manufacturing a component with a semiconductor component mounted thereon are used. A sealing device for sealing the manufactured semiconductor component-mounted component.

【0014】さらに又、本発明の第3態様である半導体
部品実装済完成品は、上記第1態様の半導体部品実装済
部品の製造装置にて製造された半導体部品実装済部品を
備えたことを特徴とする。
Further, a completed semiconductor component mounted product according to a third aspect of the present invention includes the semiconductor component mounted component manufactured by the semiconductor component mounted component manufacturing apparatus of the first aspect. Features.

【0015】[0015]

【発明の実施の形態】本発明の実施形態である、半導体
部品実装済部品の製造装置、半導体部品実装済完成品の
製造装置、及び半導体部品実装済完成品について、図を
参照しながら以下に説明する。ここで、上記半導体部品
実装済完成品の製造装置は、上記半導体部品実装済部品
の製造装置にて製造された半導体部品実装済部品を有す
る半導体部品実装済完成品を製造する装置であり、及び
上記半導体部品実装済完成品は、上記半導体部品実装済
部品の製造装置にて製造された半導体部品実装済部品を
有するものであり、又、上記半導体部品実装済完成品の
製造装置にて製造されたものである。尚、各図において
同じ構成部分については同じ符合を付している。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor device-mounted component manufacturing apparatus, a semiconductor component-mounted completed product manufacturing apparatus, and a semiconductor component-mounted completed product according to an embodiment of the present invention. explain. Here, the semiconductor device-mounted finished product manufacturing device is a device for manufacturing a semiconductor component-mounted completed product having a semiconductor component mounted component manufactured by the semiconductor component-mounted component manufacturing device, and The completed semiconductor component mounted product has a semiconductor component mounted component manufactured by the semiconductor component mounted component manufacturing apparatus, and is manufactured by the semiconductor component mounted finished product manufacturing device. It is a thing. In the drawings, the same components are denoted by the same reference numerals.

【0016】上記「課題を解決するための手段」に記載
する、「基材」の機能を果たす一例として本実施形態で
は第1熱可塑性樹脂基材122を例に取り、又「回路接
続部」の機能を果たす一例として本実施形態では、バン
プ113を例にとる。さらに又、「接触面積増加部」の
機能を果たす一例として本実施形態では、突部118、
凹凸部1131、露出面1132を例に採り、「接触面
積増加装置」の機能を果たす一例として本実施形態で
は、増加部形成部材150、155、157、加熱装置
153、及び増加部形成部材用押圧装置154を例に採
る。又、「半導体部品実装済完成品」の機能を果たす一
例として本実施形態では非接触ICカードを例にとる
が、勿論これに限定されるものではない。
In the present embodiment, the first thermoplastic resin substrate 122 is taken as an example to fulfill the function of the "substrate" described in the above "Means for Solving the Problems". In this embodiment, the bump 113 is taken as an example that fulfills the function of (1). Furthermore, in the present embodiment, as an example that fulfills the function of the “contact area increasing portion”,
In the present embodiment, the uneven portion 1131 and the exposed surface 1132 are taken as an example, and in the present embodiment, the increasing portion forming members 150, 155, and 157, the heating device 153, and the pressing for the increasing portion forming member are provided as an example that fulfills the function of the “contact area increasing device”. Take the device 154 as an example. Further, in the present embodiment, a non-contact IC card is taken as an example that fulfills the function of "finished product with semiconductor components mounted thereon", but is not limited to this.

【0017】図1は、本実施形態の半導体部品実装済部
品の製造装置を用いて作製された半導体部品実装済部品
を備えた、半導体部品実装済完成品の一例として非接触
ICカード101を示している。該非接触ICカード1
01において、半導体素子114は予め第1熱可塑性樹
脂基材122に埋め込まれ、該第1熱可塑性樹脂基材1
22のパターン形成面123に露出したバンプ113の
部材形成面115に突部118を形成する。そして、導
電性ペーストにより形成した回路パターン116と突部
118とは異方導電性ペースト等を介さずに直接導通を
得る点で従来例とは異なる。124,125は、半導体
素子114及び回路パターン116を有する半導体部品
実装済部品121を保護する為にラミネート処理を行な
う第2の熱可塑性樹脂シート基材及び第3の熱可塑性樹
脂シート基材であり、封止装置126、127にて半導
体部品実装済部品121の封止動作に相当する上記ラミ
ネート処理に使用される。以下に、非接触ICカード1
01の製造手順について図2〜図8及び図15を参照
し、説明する。
FIG. 1 shows a non-contact IC card 101 as an example of a completed semiconductor component mounted product provided with a semiconductor component mounted component manufactured using the semiconductor component mounted component manufacturing apparatus of the present embodiment. ing. The non-contact IC card 1
In FIG. 01, the semiconductor element 114 is embedded in the first thermoplastic resin base material 122 in advance, and the first thermoplastic resin base material
A protrusion 118 is formed on the member forming surface 115 of the bump 113 exposed on the pattern forming surface 123 of FIG. The circuit pattern 116 and the protrusion 118 formed of the conductive paste are different from the conventional example in that electrical continuity is obtained directly without using an anisotropic conductive paste or the like. Reference numerals 124 and 125 denote a second thermoplastic resin sheet base material and a third thermoplastic resin sheet base material which are subjected to a laminating process for protecting the semiconductor component mounted component 121 having the semiconductor element 114 and the circuit pattern 116. The sealing devices 126 and 127 are used for the above-described lamination processing corresponding to the sealing operation of the semiconductor component mounted component 121. Below, the non-contact IC card 1
01 will be described with reference to FIGS. 2 to 8 and FIG.

【0018】図2において、117は半導体部品に相当
する半導体素子114の電極、112は半導体素子11
4のアクティブ面を保護するパッシベーション膜を示
す。図2及び図15に示すステップ(図15では「S」
にて示す)1において半導体素子114の電極117上
にAuやCu、半田等にてなる金属ワイヤを用いたワイ
ヤボンディング法により、バンプ113を形成する。
In FIG. 2, reference numeral 117 denotes an electrode of a semiconductor element 114 corresponding to a semiconductor component;
4 shows a passivation film for protecting the active surface of No. 4. The steps shown in FIGS. 2 and 15 (“S” in FIG. 15)
In (1), the bump 113 is formed on the electrode 117 of the semiconductor element 114 by a wire bonding method using a metal wire made of Au, Cu, solder, or the like.

【0019】次に、図3及び図15に示すステップ2に
おいて、バンプ113を形成した半導体素子114を、
ポリエチレンテレフタレート、塩化ビニル、ポリカーボ
ネイト、アクリロニトリルブタジエンスチレン等の電気
的絶縁性を有する熱可塑性樹脂で形成されたシート状の
第1熱可塑性樹脂基材122上に一個もしくは複数個マ
ウントする。ここで、第1熱可塑性樹脂基材122の厚
みは、本実施形態の場合、後述するように少なくともバ
ンプ113の部材形成面115を第1熱可塑性樹脂基材
122から露出させる必要から、基本的に半導体素子1
14の厚み以上、半導体素子114の厚みとバンプ11
3の高さを合わせた厚み以下にすることが望ましい。例
えば、半導体素子114の厚みが0.18mm、バンプ
113の高さが0.04mmの場合、第1熱可塑性樹脂
基材122の厚みは0.2mmが好ましい。
Next, in step 2 shown in FIGS. 3 and 15, the semiconductor element 114 on which the bump 113 has been formed is removed.
One or more are mounted on a sheet-shaped first thermoplastic resin base material 122 formed of a thermoplastic resin having electrical insulation properties such as polyethylene terephthalate, vinyl chloride, polycarbonate, and acrylonitrile butadiene styrene. Here, in the case of the present embodiment, the thickness of the first thermoplastic resin base material 122 is basically set because at least the member forming surface 115 of the bump 113 needs to be exposed from the first thermoplastic resin base material 122 as described later. Semiconductor element 1
14, the thickness of the semiconductor element 114 and the bump 11
It is desirable that the height of the height 3 be equal to or less than the combined thickness. For example, when the thickness of the semiconductor element 114 is 0.18 mm and the height of the bump 113 is 0.04 mm, the thickness of the first thermoplastic resin base 122 is preferably 0.2 mm.

【0020】次に、図4及び図15に示すステップ3に
おいて、バンプ113付の半導体素子114がマウント
された第1の熱可塑性樹脂基材122を熱プレス板17
1、172間に挟み、バンプ113付半導体素子114
と第1熱可塑性樹脂基材122とを加熱しながら、半導
体部品押圧装置173にて相対的に押圧し、半導体素子
114を第1熱可塑性樹脂基材122内に挿入する。該
熱プレスの条件は、例えばポリエチレンテレフタレート
製の第1熱可塑性樹脂基材を用いた場合、圧力30×1
5Pa、温度120℃、プレス時間1分である。上記
温度、圧力は、第1熱可塑性樹脂基材122の材質によ
り異ならせる。
Next, in step 3 shown in FIGS. 4 and 15, the first thermoplastic resin base 122 on which the semiconductor element 114 with
1 and 172, the semiconductor element 114 with the bump 113
The semiconductor component 114 is inserted into the first thermoplastic resin base 122 by pressing the semiconductor component 114 relatively with the semiconductor component pressing device 173 while heating the first thermoplastic resin base 122 and the first thermoplastic resin base 122. The condition of the hot pressing is, for example, when a first thermoplastic resin substrate made of polyethylene terephthalate is used, the pressure is 30 × 1.
0 5 Pa, temperature 120 ° C., press time 1 minute. The temperature and pressure are made different depending on the material of the first thermoplastic resin base material 122.

【0021】ステップ4に対応する図5は、上記プレス
後における半導体素子114及び第1熱可塑性樹脂基材
122の状態を示した断面図である。第1熱可塑性樹脂
基材122への半導体素子114の上記挿入動作によ
り、本実施形態では図5に示すように、バンプ113の
端面、つまり上記プレスによりバンプ113が熱プレス
板171に接触した面である部材形成面115を第1熱
可塑性樹脂基材122のパターン形成面123に露出さ
せた状態で、半導体素子114及びバンプ113は第1
熱可塑性樹脂基材に埋設される。このとき、本実施形態
では、薄型化を図るため、半導体素子114の上記アク
ティブ面に対向する裏面114aと、上記パターン形成
面に対向する第1熱可塑性樹脂基材122の裏面122
aとは、図示するように同一面となるようにしている
が、これに限定されるものではない。つまり、製造する
半導体部品実装済部品によっては、上述した第1熱可塑
性樹脂基材122の厚みや、熱プレス板171、172
の押圧力等の調整により、例えば、第1熱可塑性樹脂基
材122の裏面122aより半導体素子114の裏面1
14aを突出させても良い。
FIG. 5 corresponding to step 4 is a sectional view showing a state of the semiconductor element 114 and the first thermoplastic resin base 122 after the above-mentioned pressing. According to the above-described operation of inserting the semiconductor element 114 into the first thermoplastic resin base material 122, in this embodiment, as shown in FIG. 5, the end surface of the bump 113, that is, the surface where the bump 113 contacts the hot press plate 171 by the press. In a state where the member forming surface 115 is exposed to the pattern forming surface 123 of the first thermoplastic resin base material 122, the semiconductor element 114 and the bump 113
It is embedded in a thermoplastic resin substrate. At this time, in the present embodiment, in order to reduce the thickness, the back surface 114a of the semiconductor element 114 facing the active surface and the back surface 122 of the first thermoplastic resin base 122 facing the pattern forming surface are used.
Although a is set to be the same plane as shown in the figure, the present invention is not limited to this. That is, depending on the semiconductor component-mounted component to be manufactured, the thickness of the above-described first thermoplastic resin base material 122 or the heat press plates 171 and 172
By adjusting the pressing force or the like, for example, the back surface 122a of the first thermoplastic resin
14a may be protruded.

【0022】尚、上記部材形成面115が電気的接続面
の機能を果たす一例である。又、本実施形態では、部材
形成面115のみが第1熱可塑性樹脂基材122のパタ
ーン形成面123から露出しているが、例えばプレス板
171の形状を工夫する等により、部材形成面115だ
けでなくバンプ113の一部又は全部をパターン形成面
123より露出させても良い。このように構成したとき
には、上記電気的接続面は、パターン形成面123より
露出した部分の外表面に相当する。尚、図17にはバン
プ113の部材形成面115及びその近傍部分をパター
ン形成面123より露出された場合を示している。
It is to be noted that the member forming surface 115 is an example that functions as an electrical connection surface. In the present embodiment, only the member forming surface 115 is exposed from the pattern forming surface 123 of the first thermoplastic resin base material 122. However, for example, only the member forming surface 115 is devised by devising the shape of the press plate 171 or the like. Instead, part or all of the bumps 113 may be exposed from the pattern forming surface 123. With such a configuration, the electrical connection surface corresponds to the outer surface of a portion exposed from the pattern forming surface 123. FIG. 17 shows a case in which the member forming surface 115 of the bump 113 and the vicinity thereof are exposed from the pattern forming surface 123.

【0023】次に、図6及び図15におけるステップ5
において、第1熱可塑性樹脂基材122のパターン形成
面123に露出したバンプ113の部材形成面115上
を増加部形成部材150で押圧することで、部材形成面
115にバンプ113から突部118をバンプ113と
一体的に成形する。即ち、増加部形成部材150は、例
えば、内部に中空部151を有する円筒構造となったも
のを用いる。該増加部形成部材150に接続される加熱
装置153にて増加部形成部材150を例えば200℃
に加熱し、増加部形成部材用押圧装置154にて、1バ
ンプ当たり荷重100gで、増加部形成部材150の先
端152を上記部材形成面115に押圧することで、部
材形成面115が変形し、バンプ113の一部が中空部
150aに入り込む。よって、押圧後において、部材形
成面115には、該部材形成面115より突出した凸形
状の突部118がバンプ113と一体的に成形される。
Next, step 5 in FIG. 6 and FIG.
By pressing the bump forming member 115 exposed on the pattern forming surface 123 of the first thermoplastic resin base material 122 with the increasing portion forming member 150, the protrusion 118 is formed on the member forming surface 115 from the bump 113. It is formed integrally with the bump 113. That is, as the increasing portion forming member 150, for example, a member having a cylindrical structure having a hollow portion 151 inside is used. The heating unit 153 connected to the increasing portion forming member 150 heats the increasing portion forming member 150 to, for example, 200 ° C.
By pressing the tip 152 of the increasing portion forming member 150 against the member forming surface 115 with a load of 100 g per bump by the increasing portion forming member pressing device 154, the member forming surface 115 is deformed. Part of the bump 113 enters the hollow portion 150a. Therefore, after the pressing, the protruding protrusion 118 protruding from the member forming surface 115 is formed integrally with the bump 113 on the member forming surface 115.

【0024】このような突部118を形成することで、
後述する導電性ペーストによる回路パターンとの接触面
積が、単に部材形成面115上に回路パターンを形成す
る場合と比較して増大する為に、接合信頼性がより増
す。又、増加部形成部材150にて突部118を形成す
ることから、例えばバンプ113上にさらにバンプを形
成するような場合に比べてコスト低減を図ることができ
る。
By forming such a protrusion 118,
Since the contact area of the conductive paste to be described later with the circuit pattern is increased as compared with the case where the circuit pattern is simply formed on the member forming surface 115, the bonding reliability is further increased. Further, since the protruding portion 118 is formed by the increasing portion forming member 150, the cost can be reduced as compared with a case where a bump is further formed on the bump 113, for example.

【0025】又、上記増加部形成部材150は、上述の
形状のものに限定されるものではなく、例えば図18に
示す棒状の増加部形成部材155のように、その先端1
56に、好ましくは端部を尖らした、好ましくは複数の
凹凸部1561を形成したものを使用することもでき
る。このような増加部形成部材155の凹凸部1561
をバンプ113の上記部材形成面115上に押圧するこ
とで、部材形成面115に凹凸部1131を形成するこ
とができ、後述する導電性ペーストによる回路パターン
とバンプ113との接触面積を増大させることができ、
接合の信頼性を増すことができる。
Further, the above-mentioned increasing portion forming member 150 is not limited to the above-described shape. For example, like a rod-like increasing portion forming member 155 shown in FIG.
It is also possible to use the one in which the end is preferably pointed, preferably a plurality of uneven portions 1561 are formed. Such an uneven portion 1561 of the increasing portion forming member 155
Is pressed onto the member forming surface 115 of the bump 113, thereby forming an uneven portion 1131 on the member forming surface 115, thereby increasing the contact area between the bump 113 and a circuit pattern made of a conductive paste described later. Can be
The reliability of bonding can be increased.

【0026】さらに増加部形成部材150の変形例とし
て、図19に示すような増加部形成部材157を用いる
こともできる。該増加部形成部材157は、バンプ11
3が収納される程度の中空部1571と、該増加部形成
部材157の先端部が第1熱可塑性樹脂基材122のパ
ターン形成面123に押圧されたときバンプ113の周
囲に、後述の導電性ペーストによる回路パターンとバン
プ113との接触面積を増加させるための接触面積増加
用溝1572を形成する先端部1573とを有する。こ
のような増加部形成部材157を第1熱可塑性樹脂基材
122のパターン形成面123に押圧することで、バン
プ113の周囲には上記接触面積増加用溝1572が形
成され、該接触面積増加用溝1572によって第1熱可
塑性樹脂基材122から露出した露出面1132がバン
プ113に形成される。よって、パターン形成面123
から露出するバンプ113の表面積を増大させることが
でき、後述する導電性ペーストによる回路パターンとバ
ンプ113との接触面積を増大させることができ、接合
の信頼性を増すことができる。
Further, as a modification of the increasing portion forming member 150, an increasing portion forming member 157 as shown in FIG. 19 can be used. The increasing portion forming member 157 includes the bump 11
3 is accommodated, and when a tip end of the increasing portion forming member 157 is pressed against the pattern forming surface 123 of the first thermoplastic resin base material 122, a conductive portion to be described later is formed around the bump 113. It has a tip 1573 for forming a contact area increasing groove 1572 for increasing the contact area between the circuit pattern formed by the paste and the bump 113. By pressing the increasing portion forming member 157 against the pattern forming surface 123 of the first thermoplastic resin base material 122, the contact area increasing groove 1572 is formed around the bump 113, and the contact area increasing groove 1572 is formed. An exposed surface 1132 exposed from the first thermoplastic resin base 122 by the groove 1572 is formed on the bump 113. Therefore, the pattern forming surface 123
The surface area of the bump 113 exposed from the bumps can be increased, the contact area between the bump 113 and a circuit pattern made of a conductive paste described later can be increased, and the reliability of bonding can be increased.

【0027】即ち、バンプ113に対して、後述する導
電性ペーストによる回路パターンとバンプ113との接
触面積を増加させるための接触面積増加部を形成する増
加部形成部材を使用することができる。ここで上記接触
面積増加部としては、上記突部118や、上記凹凸部1
561にて部材形成面115に形成される凹凸部113
1や、上記接触面積増加用溝1572により露出した上
記露出面1132等が相当する。又、上記バンプに上記
凹凸部1131を形成する場合、ステップ3にて熱プレ
ス板171に半導体素子114を埋設するときを利用し
て、凹凸を設けた熱プレス板にてバンプに凹凸を形成す
るように構成することもできる。
That is, for the bumps 113, an increasing portion forming member for forming a contact area increasing portion for increasing the contact area between the bump 113 and a circuit pattern made of a conductive paste described later can be used. Here, as the contact area increasing portion, the protrusion 118 or the uneven portion 1 is used.
The uneven portion 113 formed on the member forming surface 115 at 561
1 and the exposed surface 1132 exposed by the contact area increasing groove 1572 and the like. When the bumps 1131 are formed on the bumps, the bumps are formed on the bumps using the hot press plate provided with the bumps, utilizing the process of embedding the semiconductor element 114 in the hot press plate 171 in step 3. It can also be configured as follows.

【0028】次に、図7及び図15におけるステップ6
において、Ag、Cu等の導電性ペーストを用いて、突
部118に接触するように、好ましくは図示するように
突部118を埋設するようにして半導体素子114と電
気的に接続される回路パターン116を、第1熱可塑性
樹脂基材122のパターン形成面123上に形成する。
又、上述したバンプ113における上記凹凸部1131
や上記露出面1132の場合においても、上記凹凸部1
131や上記露出面1132と接触するように、好まし
くはこれらを埋設するようにして半導体素子114と電
気的に接続される回路パターン116が、第1熱可塑性
樹脂基材122のパターン形成面123上に形成され
る。該導電性ペーストによる回路パターン116の形成
は、一般的にスクリーン印刷やオフセット印刷やグラビ
ア印刷等によって行われる。例えばスクリーン印刷の場
合、165メッシュ/インチ、乳剤厚み10μmのマス
クを介して導電性ペーストを印刷し、導体厚み約30μ
mの回路パターン116を形成する。尚、形成される回
路パターン116は、本実施形態では、半導体素子11
4と無線にて情報の送受信を行なう為のアンテナコイル
の形状である。勿論、上記回路パターン116は、上記
アンテナコイル形状に限定されるものではなく、製造物
としての半導体部品実装済部品の機能に応じた形態に形
成される。このようにして、回路パターン116への半
導体素子114の実装を行なう。又、該実装された図7
に示す状態の構成部分を、半導体部品実装済部品121
とする。
Next, step 6 in FIG. 7 and FIG.
A circuit pattern electrically connected to the semiconductor element 114 by using a conductive paste such as Ag, Cu or the like so as to be in contact with the protrusion 118, preferably to bury the protrusion 118 as illustrated. 116 is formed on the pattern forming surface 123 of the first thermoplastic resin base material 122.
Also, the above-mentioned uneven portion 1131 in the above-mentioned bump 113 is formed.
Also, in the case of the exposed surface 1132, the uneven portion 1
The circuit pattern 116 that is electrically connected to the semiconductor element 114 so as to be in contact with the exposed surface 131 or the exposed surface 1132, preferably by embedding them, is formed on the pattern forming surface 123 of the first thermoplastic resin base material 122. Formed. The formation of the circuit pattern 116 using the conductive paste is generally performed by screen printing, offset printing, gravure printing, or the like. For example, in the case of screen printing, a conductive paste is printed through a mask of 165 mesh / inch and an emulsion thickness of 10 μm, and a conductor thickness of about 30 μm is used.
The m circuit patterns 116 are formed. In this embodiment, the formed circuit pattern 116 is the semiconductor element 11.
4 and the shape of an antenna coil for wirelessly transmitting and receiving information. Of course, the circuit pattern 116 is not limited to the antenna coil shape, but is formed in a form corresponding to the function of the semiconductor component-mounted component as a product. In this way, the semiconductor element 114 is mounted on the circuit pattern 116. Also, FIG.
The components in the state shown in FIG.
And

【0029】次に、図8及び図15におけるステップ7
において、上記半導体部品実装済部品121をその厚み
方向からポリエチレンテレフタレート、塩化ビニル、ポ
リカーボネート、アクリロニトリルブタジエンスチレン
等電気的絶縁性を有するシート状の第2熱可塑性樹脂基
材124及び第3熱可塑性樹脂基材125にてサンドイ
ッチして、封止装置126、127にてラミネート処理
し、半導体部品121の封止を行なう。該ラミネート処
理の条件は、例えばポリエチレンテレフタレート製の第
1熱可塑性樹脂基材を用いた場合、圧力30×105
a、温度120℃、プレス時間1分、圧力保持時間1分
である。
Next, step 7 in FIG. 8 and FIG.
In the above, the semiconductor component-mounted component 121 is formed from the thickness direction thereof with a sheet-shaped second thermoplastic resin base 124 and a third thermoplastic resin base having electrical insulation such as polyethylene terephthalate, vinyl chloride, polycarbonate, acrylonitrile butadiene styrene, etc. The semiconductor component 121 is sealed by sandwiching with the material 125 and laminating with the sealing devices 126 and 127. The conditions for the lamination treatment are as follows: when a first thermoplastic resin substrate made of polyethylene terephthalate is used, the pressure is 30 × 10 5 P
a, temperature 120 ° C., press time 1 minute, pressure holding time 1 minute.

【0030】以上の工程を経て、図1に示すような、半
導体素子114が実装されたモジュールとしての半導体
部品実装済部品や、本実施形態の場合のように上記半導
体部品実装済部品を有する半導体部品実装済完成品とし
ての機能を果たす一例に相当する非接触ICカード10
1が完成する。このように本実施形態によれば、第1熱
可塑性樹脂基材122に半導体素子114を予め埋め込
んだ後に、カード化を実施する為、従来例における図2
7に示すようなカード化後における半導体素子4の基材
1aへの沈み込みは発生しない。よって、回路パターン
116が断線することは無く、高品質の半導体部品実装
済部品及び半導体部品実装済完成品を製造することが可
能になる。さらに、異方導電性シート又は異方導電性粒
子等の接合材料を用いる必要が無い為、異方導電性シー
ト等の処理に要する工程は無く、高生産性且つ安価な半
導体部品実装済部品及び半導体部品実装済完成品を提供
することが可能になる。
Through the above steps, as shown in FIG. 1, a semiconductor component mounted component as a module on which the semiconductor element 114 is mounted, or a semiconductor having the semiconductor component mounted component as in the present embodiment. Non-contact IC card 10 corresponding to an example that fulfills a function as a component-mounted completed product
1 is completed. As described above, according to the present embodiment, a card is formed after the semiconductor element 114 is embedded in the first thermoplastic resin base material 122 in advance.
As shown in FIG. 7, sinking of the semiconductor element 4 into the base material 1a after carding does not occur. Therefore, the circuit pattern 116 is not disconnected, and it is possible to manufacture high-quality semiconductor component-mounted components and semiconductor component-mounted finished products. Furthermore, since there is no need to use a bonding material such as an anisotropic conductive sheet or anisotropic conductive particles, there is no step required for processing the anisotropic conductive sheet or the like, and a high-productivity and inexpensive semiconductor component-mounted component and It is possible to provide a finished product on which semiconductor components are mounted.

【0031】又、ステップ6にてパターン形成面123
上に回路パターン116を形成した後、図9に示すよう
に、当該回路パターンの所定の位置にコンデンサ、抵抗
等の受動部品である電子部品129をマウントした、半
導体部品実装済部品128を形成することも出来る。そ
して、図10に示すように、該半導体部品実装済部品1
28をその厚み方向から第2熱可塑性樹脂基材124及
び第3熱可塑性樹脂基材125にてサンドイッチしてラ
ミネート処理して、図10に示す非接触ICカード10
2を製造することも出来る。
In step 6, the pattern forming surface 123
After the circuit pattern 116 is formed thereon, as shown in FIG. 9, a semiconductor component-mounted component 128 in which an electronic component 129 which is a passive component such as a capacitor or a resistor is mounted at a predetermined position of the circuit pattern. You can do it. Then, as shown in FIG.
28 is sandwiched between the second thermoplastic resin substrate 124 and the third thermoplastic resin substrate 125 from the thickness direction thereof and laminated, and the non-contact IC card 10 shown in FIG.
2 can also be manufactured.

【0032】又、上述した図1〜図10では、半導体素
子114と回路パターン116との接続箇所のみを示し
ているが、図7に示す半導体部品実装済部品121の全
体を示す平面図を図11に、図11に示すI−I部の断
面図を図12に示し、さらに半導体部品実装済部品12
1の全体を第2熱可塑性樹脂基材124及び第3熱可塑
性樹脂基材125にてラミネート処理してなる非接触I
Cカード101における上記I−I部分の断面図を図1
3に示す。
In FIGS. 1 to 10 described above, only the connection portions between the semiconductor element 114 and the circuit pattern 116 are shown, but FIG. 7 is a plan view showing the entire semiconductor component mounted component 121 shown in FIG. 11 is a cross-sectional view taken along the line II of FIG. 11, and FIG.
Non-contact I obtained by laminating the whole of No. 1 with a second thermoplastic resin base 124 and a third thermoplastic resin base 125
FIG. 1 is a cross-sectional view of the II section of the C card 101.
3 is shown.

【0033】又、図14に示すように回路パターン11
6の外周端130と半導体素子114の電極117の対
応部分131とをジャンパー接続する為に、回路パター
ン116に絶縁膜132を設けた後、外周端130と上
記電極対応部分131とを導電性ペーストの印刷や導電
性箔133等にて電気的に接続する。これにより、図示
するようなジャンパーが完成する。尚、絶縁膜132の
形成は、ポリエステル系の絶縁箔の接着や絶縁塗料の印
刷により行なう。
Further, as shown in FIG.
In order to make a jumper connection between the outer peripheral end 130 of the semiconductor element 114 and the corresponding portion 131 of the electrode 117 of the semiconductor element 114, an insulating film 132 is provided on the circuit pattern 116, and then the outer peripheral end 130 and the electrode corresponding portion 131 are electrically conductive paste And electrically connected by a conductive foil 133 or the like. Thereby, the jumper as shown is completed. The insulating film 132 is formed by bonding a polyester insulating foil or printing an insulating paint.

【0034】又、回路パターン116の外周端130と
半導体素子114の電極117の対応部分131とのジ
ャンパー接続は、上述の方法に限定されるものではな
く、例えば図16に示すように、第1熱可塑性樹脂基材
122に予め設けておいたスルーホール180を介し
て、導電性ペーストの印刷により回路パターン116の
形成面とは反対側に回路パターン133を形成すること
によっても行うことができる。回路パターン133の形
成は、半導体素子114を第1熱可塑性樹脂基材122
に埋め込む前に実施しても良いし、回路パターン116
形成後に実施しても良い。スルーホール180への導電
性ペーストの充填は、回路パターン116の印刷時、も
しくは、回路パターン133の印刷時に同時に行うこと
ができる。
The jumper connection between the outer peripheral end 130 of the circuit pattern 116 and the corresponding portion 131 of the electrode 117 of the semiconductor element 114 is not limited to the above-mentioned method. For example, as shown in FIG. This can also be performed by forming a circuit pattern 133 on the side opposite to the surface on which the circuit pattern 116 is formed by printing a conductive paste through a through-hole 180 provided in the thermoplastic resin base 122 in advance. The formation of the circuit pattern 133 is performed by forming the semiconductor element 114 on the first thermoplastic resin base 122.
May be performed before embedding in the circuit pattern 116.
It may be performed after formation. The filling of the conductive paste into the through holes 180 can be performed simultaneously with the printing of the circuit pattern 116 or the printing of the circuit pattern 133.

【0035】又、本実施形態では、回路パターン116
の形成面と反対側に形成するパターン133はコイルジ
ャンパーであるが、該構成に限定されるものではない。
第1熱可塑性樹脂基材122を両面基板として、製造物
としての半導体部品実装済部品の機能に応じた形態に形
成することができる。
In this embodiment, the circuit pattern 116 is used.
The pattern 133 formed on the side opposite to the surface on which is formed is a coil jumper, but is not limited to this configuration.
The first thermoplastic resin substrate 122 can be formed as a double-sided substrate in a form corresponding to the function of the semiconductor component-mounted component as a product.

【0036】以上の説明において、半導体部品実装済完
成品の機能を果たす一例としての非接触ICカードを製
造する際に、半導体部品実装済部品121や半導体部品
実装済部品128を、2つの熱可塑性樹脂基材124、
125にてサンドイッチする構成をとっているが、該構
成に限定されるものではない。例えば、第1熱可塑性樹
脂基材122をプレート上に載置して、これを封止する
ようなときには、第3熱可塑性樹脂基材125のみを使
用すればよく、製造する半導体部品実装済部品の種類
や、機能に応じて、2つの熱可塑性樹脂基材124、1
25の使用を適宜工夫すれば良い。
In the above description, when manufacturing a non-contact IC card as an example that fulfills the function of a completed semiconductor component mounted product, the semiconductor component mounted component 121 and the semiconductor component mounted component 128 are combined with two thermoplastic components. Resin base material 124,
Although a configuration of sandwiching at 125 is adopted, the present invention is not limited to this configuration. For example, when the first thermoplastic resin substrate 122 is placed on a plate and sealed, only the third thermoplastic resin substrate 125 may be used, and the semiconductor component-mounted component to be manufactured may be used. The two thermoplastic resin bases 124, 1
The use of 25 may be appropriately devised.

【0037】又、上述の実施形態では、上述のように第
1熱可塑性樹脂基材122の厚み調整、及び熱プレス動
作の制御を行なうことで、上記ステップ3にて、第1熱
可塑性樹脂基材122へのバンプ113付半導体素子1
14の挿入動作と、バンプ113の部材形成面115の
パターン形成面123への露出動作とを同じ工程にて処
理しているが、これに限定されるものではない。即ち、
上記電気的接続面、例えば部材形成面115をパターン
形成面123に露出させず、上記ステップ6にて、押圧
増加部形成部材150にて、突部118として露出さ
せ、回路パターン116との電気的接続を図るように構
成してもよい。
In the above-described embodiment, by adjusting the thickness of the first thermoplastic resin base material 122 and controlling the hot pressing operation as described above, the first thermoplastic resin Element 1 with bump 113 on material 122
The operation of inserting 14 and the operation of exposing the member forming surface 115 of the bump 113 to the pattern forming surface 123 are performed in the same process, but are not limited thereto. That is,
The electric connection surface, for example, the member forming surface 115 is not exposed to the pattern forming surface 123, and is exposed as the protrusion 118 by the pressing increasing portion forming member 150 in the step 6, and is electrically connected to the circuit pattern 116. The connection may be configured.

【0038】[0038]

【発明の効果】以上詳述したように本発明の第1態様に
おける、半導体部品実装済部品の製造装置、第2態様に
おける、半導体部品実装済完成品の製造装置、及び第3
態様の半導体部品実装済完成品によれば、半導体部品押
圧装置にて半導体部品を基材に挿入後、挿入された半導
体部品の回路接続部に対して接触面積増加装置にて接触
面積増加部を形成し、該接触面積増加部を有する上記回
路接続部に対して回路パターンを形成することで実装を
完成させる。よって、実装時には異方導電性シートや異
方導電性粒子を用いない為、従来に比べて大幅な生産性
の向上とコストダウンが可能になる。又、上記基材に挿
入された半導体部品に対して回路パターンを形成するこ
とから、従来発生したような半導体部品の基材への沈み
込みを防ぐことが出来、その結果、回路パターンの断線
が無く、高品質の半導体部品実装済部品、及び半導体部
品実装済完成品を安定して生産することができる。
As described above in detail, in the first embodiment of the present invention, the device for manufacturing a semiconductor component mounted component, in the second embodiment, the device for manufacturing a completed semiconductor component mounted product, and
According to the completed semiconductor component mounted product of the aspect, after the semiconductor component is inserted into the base material by the semiconductor component pressing device, the contact area increasing portion is contacted with the circuit connecting portion of the inserted semiconductor component by the contact area increasing device. The mounting is completed by forming a circuit pattern on the circuit connecting portion having the contact area increasing portion. Therefore, since the anisotropic conductive sheet and the anisotropic conductive particles are not used at the time of mounting, it is possible to significantly improve productivity and reduce costs as compared with the related art. Further, since the circuit pattern is formed on the semiconductor component inserted into the base material, it is possible to prevent sinking of the semiconductor component into the base material as conventionally occurred, and as a result, disconnection of the circuit pattern is prevented. Therefore, it is possible to stably produce high-quality semiconductor component-mounted components and semiconductor component-mounted finished products.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施形態における半導体部品実装済
完成品の断面図である。
FIG. 1 is a sectional view of a completed semiconductor component mounted product according to an embodiment of the present invention.

【図2】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ1における状態を
示す図である。
FIG. 2 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 1;

【図3】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ2における状態を
示す図である。
FIG. 3 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 2;

【図4】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ3における状態を
示す図である。
FIG. 4 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 3;

【図5】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ4における状態を
示す図である。
FIG. 5 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 4;

【図6】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ5における状態を
示す図である。
FIG. 6 is a diagram for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a diagram showing a state in step 5;

【図7】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ6における状態を
示す図である。
FIG. 7 is a diagram for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a diagram showing a state in step 6;

【図8】 図1に示す半導体部品実装済完成品の製造過
程を説明する為の図であり、ステップ7における状態を
示す図である。
FIG. 8 is a view for explaining a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1, and is a view showing a state in step 7;

【図9】 図1に示す半導体部品実装済完成品に備わる
半導体部品実装済部品について、電子部品を回路パター
ン上に装着した状態を示す図である。
FIG. 9 is a view showing a state in which electronic components are mounted on a circuit pattern for the semiconductor component mounted components included in the completed semiconductor component mounted product shown in FIG. 1;

【図10】 図9に示す半導体部品実装済部品をラミネ
ート処理した状態を示す断面図である。
FIG. 10 is a cross-sectional view showing a state where the semiconductor component-mounted component shown in FIG. 9 has been subjected to lamination processing.

【図11】 図1に示す半導体部品実装済完成品が非接
触ICカードの場合であって、該非接触ICカードに備
わる半導体部品実装済部品の平面図である。
11 is a plan view of the non-contact IC card when the completed semiconductor component mounted product shown in FIG. 1 is a non-contact IC card; FIG.

【図12】 図11に示すI−I部における断面図であ
る。
12 is a cross-sectional view taken along a line II shown in FIG.

【図13】 図11における非接触ICカードの上記I
−I部における断面図である。
FIG. 13 shows the above I of the non-contact IC card in FIG.
It is sectional drawing in the -I part.

【図14】 図11における非接触ICカードにて、ジ
ャンパーを設けた状態を示す平面図である。
FIG. 14 is a plan view showing a state in which a jumper is provided in the non-contact IC card in FIG. 11;

【図15】 図1に示す半導体部品実装済完成品の製造
過程を示すフローチャートである。
15 is a flowchart showing a manufacturing process of the completed semiconductor component mounted product shown in FIG. 1;

【図16】 ジャンパーを設けた図11における非接触
ICカードの変形例の断面図である。
FIG. 16 is a sectional view of a modification of the non-contact IC card in FIG. 11 provided with a jumper.

【図17】 図7に示す半導体部品実装済部品の変形例
における断面図である。
FIG. 17 is a cross-sectional view of a modification of the semiconductor component-mounted component shown in FIG. 7;

【図18】 図6に示す増加部形成部材の変形例を示す
図である。
FIG. 18 is a view showing a modification of the increasing portion forming member shown in FIG.

【図19】 図6に示す増加部形成部材の別の変形例を
示す図である。
FIG. 19 is a view showing another modification of the increasing portion forming member shown in FIG. 6;

【図20】 従来の非接触ICカードの構造を示す斜視
図である。
FIG. 20 is a perspective view showing the structure of a conventional non-contact IC card.

【図21】 従来の非接触ICカードの製造工程を示す
フローチャートである。
FIG. 21 is a flowchart showing a conventional non-contact IC card manufacturing process.

【図22】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 22 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図23】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 23 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図24】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 24 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図25】 従来の非接触ICカードの製造工程を示す
断面図である。
FIG. 25 is a cross-sectional view showing a conventional non-contact IC card manufacturing process.

【図26】 従来の非接触ICカードの構造を示す断面
図である。
FIG. 26 is a sectional view showing the structure of a conventional non-contact IC card.

【図27】 従来の非接触ICカードの不具合状態を示
す断面図である。
FIG. 27 is a cross-sectional view showing a defective state of a conventional non-contact IC card.

【符号の説明】[Explanation of symbols]

101,102…非接触ICカード、113…バンプ、
114…半導体素子、115…部材形成面、116…回
路パターン、117…電極、118…回路接続用部材、
121…半導体部品実装済部品、122…第1熱可塑性
樹脂基材、123…パターン形成面、124…第2熱可
塑性樹脂基材、125…第3熱可塑性樹脂基材、128
…半導体部品実装済部品、129…電子部品、150…
増加部形成部材。
101, 102: Non-contact IC card, 113: Bump,
114: semiconductor element, 115: member forming surface, 116: circuit pattern, 117: electrode, 118: circuit connecting member,
Reference numeral 121 denotes a component on which semiconductor components are mounted, 122 denotes a first thermoplastic resin base, 123 denotes a pattern forming surface, 124 denotes a second thermoplastic resin base, and 125 denotes a third thermoplastic resin base.
... Semiconductor component mounted parts, 129 ... Electronic parts, 150 ...
Increase part forming member.

フロントページの続き (72)発明者 宮川 秀規 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 5E346 FF45 GG28 HH31 5F044 KK02 LL07 QQ02 QQ04 RR16Continued on the front page (72) Inventor Hideki Miyagawa 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 5E346 FF45 GG28 HH31 5F044 KK02 LL07 QQ02 QQ04 RR16

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 半導体部品(114)の回路接続部(1
13)に接触して上記半導体部品と電気的に接続され導
電性ペーストにて形成される回路パターン(116)を
基材(122)のパターン形成面(123)上に形成す
ることで当該回路パターンへの上記半導体部品の実装を
行なう半導体部品実装済部品の製造装置において、 上記基材に上記半導体部品を挿入するとともに、上記パ
ターン形成面に上記半導体部品の上記回路接続部を露出
させ又は非露出な状態で近接させる半導体部品押圧装置
(173)と、 上記パターン形成面に露出又は近接した上記回路接続部
に対して、上記回路パターンと上記回路接続部との接触
面積を増加させる接触面積増加部(118,1131,
1132)を形成する接触面積増加装置(150、15
3、154、155、157)と、を備えたことを特徴
とする半導体部品実装済部品の製造装置。
A circuit connection part (1) of a semiconductor component (114).
13) is formed on the pattern forming surface (123) of the base material (122) by forming a circuit pattern (116) which is electrically connected to the semiconductor component and is made of a conductive paste in contact with the semiconductor component. In the apparatus for manufacturing a semiconductor component mounted component that mounts the semiconductor component on the substrate, the semiconductor component is inserted into the base material, and the circuit connection portion of the semiconductor component is exposed or unexposed on the pattern forming surface. A semiconductor component pressing device (173) for bringing the circuit pattern into close contact with the circuit connecting portion, and a contact area increasing portion for increasing a contact area between the circuit pattern and the circuit connecting portion with respect to the circuit connecting portion exposed or close to the pattern forming surface. (118, 1131,
1132) to form a contact area increasing device (150, 15).
3, 154, 155, and 157).
【請求項2】 上記接触面積増加装置は、 上記回路接続部に接触して、又は上記回路接続部近傍の
上記パターン形成面に接触して上記接触面積増加部を形
成する増加部形成部材(150、155、157)と、 上記増加部形成部材を上記回路接続部又は上記回路接続
部近傍の上記パターン形成面に押圧する増加部形成部材
用押圧装置(154)とを有する、請求項1記載の半導
体部品実装済部品の製造装置。
2. The contact area increasing device, comprising: an increasing portion forming member (150) that contacts the circuit connecting portion or contacts the pattern forming surface near the circuit connecting portion to form the contact area increasing portion. 155, 157), and an increasing portion forming member pressing device (154) for pressing the increasing portion forming member against the circuit connecting portion or the pattern forming surface near the circuit connecting portion. Manufacturing equipment for semiconductor component mounted components.
【請求項3】 上記増加部形成部材は、円筒形状にてな
り、上記増加部形成部材用押圧装置による押圧動作にて
上記回路接続部を成形して上記回路接続部に上記接触面
積増加部としての突部(118)を形成する、請求項2
記載の半導体部品実装済部品の製造装置。
3. The increasing portion forming member has a cylindrical shape, and the circuit connecting portion is formed by a pressing operation of the increasing portion forming member pressing device, and is formed on the circuit connecting portion as the contact area increasing portion. Forming a projection (118) of
A manufacturing device for a semiconductor component-mounted component described in the above.
【請求項4】 上記増加部形成部材は、先端(156)
に凹凸部(1561)を有し、上記増加部形成部材用押
圧装置による押圧動作にて上記回路接続部を成形して上
記回路接続部に上記接触面積増加部としての凹凸部(1
131)を形成する、請求項2記載の半導体部品実装済
部品の製造装置。
4. The end forming member includes a tip (156).
The circuit connecting portion is formed by pressing operation of the increasing portion forming member pressing device, and the circuit connecting portion is provided with the uneven portion (1561) as the contact area increasing portion.
131. The apparatus for manufacturing a component already mounted with a semiconductor component according to claim 2, wherein 131) is formed.
【請求項5】 上記増加部形成部材は、円筒形状にてな
り、上記増加部形成部材用押圧装置による押圧動作にて
上記回路接続部近傍の上記パターン形成面を押圧して上
記回路接続部近傍に接触面積増加用溝(1572)を形
成して上記回路接続部を上記基材から露出させる、請求
項2記載の半導体部品実装済部品の製造装置。
5. The increasing portion forming member has a cylindrical shape, and presses the pattern forming surface in the vicinity of the circuit connecting portion by a pressing operation of the increasing portion forming member pressing device. 3. The apparatus for manufacturing a semiconductor component-mounted component according to claim 2, wherein a groove (1572) for increasing a contact area is formed in the substrate to expose the circuit connection portion from the base material.
【請求項6】 請求項1から5のいずれかに記載の半導
体部品実装済部品の製造装置と、 上記半導体部品実装済部品の製造装置にて製造された半
導体部品実装済部品(121)を封止する封止装置と、
を備えたことを特徴とする半導体部品実装済完成品の製
造装置。
6. A device for manufacturing a semiconductor component mounted component according to claim 1, and a semiconductor component mounted component manufactured by said semiconductor component mounted device manufacturing device. A sealing device for stopping,
An apparatus for manufacturing a finished product on which semiconductor components are mounted, comprising:
【請求項7】 請求項1から5のいずれかに記載の半導
体部品実装済部品の製造装置にて製造された半導体部品
実装済部品(121)を備えたことを特徴とする半導体
部品実装済完成品。
7. A completed semiconductor component mounted component comprising a semiconductor component mounted component (121) manufactured by the semiconductor component mounted component manufacturing apparatus according to any one of claims 1 to 5. Goods.
【請求項8】 請求項6記載の半導体部品実装済完成品
の製造装置にて製造されたことを特徴とする半導体部品
実装済完成品。
8. A finished product on which a semiconductor component is mounted, which is manufactured by the apparatus for manufacturing a finished product on which a semiconductor component is mounted according to claim 6.
【請求項9】 上記半導体部品実装済完成品は非接触I
Cカードである、請求項7又は8記載の半導体部品実装
済完成品。
9. The non-contact I-to-chip finished product is
9. The completed semiconductor component mounted product according to claim 7, which is a C card.
JP2000063686A 1999-07-16 2000-03-08 Manufacturing method of semiconductor component mounted parts Expired - Fee Related JP4209574B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000063686A JP4209574B2 (en) 2000-03-08 2000-03-08 Manufacturing method of semiconductor component mounted parts
DE60042787T DE60042787D1 (en) 1999-07-16 2000-07-13 Method for producing a packaged semiconductor device
PCT/JP2000/004699 WO2001006558A1 (en) 1999-07-16 2000-07-13 Package of semiconductor device and method of manufacture thereof
EP00944429A EP1204136B1 (en) 1999-07-16 2000-07-13 Method of fabricating a packaged semiconductor device
US10/031,000 US6780668B1 (en) 1999-07-16 2000-07-13 Package of semiconductor device and method of manufacture thereof
US10/736,568 US7090482B2 (en) 1999-07-16 2003-12-17 Semiconductor device package manufacturing method and semiconductor device package manufactured by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000063686A JP4209574B2 (en) 2000-03-08 2000-03-08 Manufacturing method of semiconductor component mounted parts

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Publication Number Publication Date
JP2001250839A true JP2001250839A (en) 2001-09-14
JP4209574B2 JP4209574B2 (en) 2009-01-14

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003110336A (en) * 2001-09-28 2003-04-11 Lintec Corp Antenna coil and noncontact card using the same
US7084008B2 (en) 2002-10-30 2006-08-01 Matsushita Electric Industrial Co., Ltd. Manufacturing method for electronic component-mounted component, manufacturing method for electronic component-mounted completed product with the electronic component-mounted component, and electronic component-mounted completed product
US7176055B2 (en) 2001-11-02 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing electronic component-mounted component, and electronic component-mounted component
KR20130139600A (en) * 2012-06-13 2013-12-23 에스케이하이닉스 주식회사 Package of electronic device with strengthened bump interconnection and method for manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003110336A (en) * 2001-09-28 2003-04-11 Lintec Corp Antenna coil and noncontact card using the same
US7176055B2 (en) 2001-11-02 2007-02-13 Matsushita Electric Industrial Co., Ltd. Method and apparatus for manufacturing electronic component-mounted component, and electronic component-mounted component
US7084008B2 (en) 2002-10-30 2006-08-01 Matsushita Electric Industrial Co., Ltd. Manufacturing method for electronic component-mounted component, manufacturing method for electronic component-mounted completed product with the electronic component-mounted component, and electronic component-mounted completed product
KR20130139600A (en) * 2012-06-13 2013-12-23 에스케이하이닉스 주식회사 Package of electronic device with strengthened bump interconnection and method for manufacturing the same
KR102061342B1 (en) * 2012-06-13 2020-01-02 에스케이하이닉스 주식회사 Package of electronic device with strengthened bump interconnection and method for manufacturing the same

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