JP2001249452A - Polybenzoxazole precursor composition and photosensitive resin precursor composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an alkali developable positive type photosensitive resin precursor composition excellent in solvent resistance. SOLUTION: The polybenzoxazole precursor composition is based on a structural unit of formula 1 (where R1 is one of groups of formulae 2-5; R2 is a tri- to hexavalent >=2C organic group; (n) is an integer of 10-100,000; (p) is an integer of 1-4; R3 and R4 are each H, a 1-10C organic group, nitro, halogen or perfluoroalkyl and may be the same or different; and (x) and (y) are each an integer of 1-4) and the positive type photosensitive resin precursor composition contains the polybenzoxazole precursor composition and an o-quinonediazido compound.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photosensitive polybenzoxazole precursor composition suitable for a surface protective film, an interlayer insulating film and the like of a semiconductor device.

[0002]

2. Description of the Related Art As a positive type heat-resistant resin precursor composition in which an exposed portion is dissolved by development, a photosensitive polybenzoxazole precursor composition obtained by adding quinonediazide to a polyamide having a hydroxyl group is known. I have. For example, the photosensitive polybenzoxazole precursor composition disclosed in Japanese Patent Publication No. 1-46862 has high heat resistance, excellent electrical properties, and fine workability, but has problems such as low sensitivity. To improve these, polybenzoxazoles having various skeletons have been studied, but as a dicarboxylic acid component, 4,4′-diphenyl ether dicarboxylic acid is mainly used to increase i-ray transmittance. I have.

In the semiconductor manufacturing process, there are treatments with various organic solvents such as acetone, isopropyl alcohol, N-methylpyrrolidone (NMP), and the solvent resistance of the heat-resistant resin used for the interlayer insulating film is an important film property. . However, polybenzoxazole obtained from a polybenzoxazole precursor composition having good pattern processability was not particularly resistant to NMP. In addition, a polyimide resin or a polybenzoxazole resin used as a heat-resistant resin is obtained by processing the precursor composition, dehydrating and ring-closing by heat treatment, and shrinking on the substrate. If the residual stress is large, there is a problem that the warpage of the wafer is increased.

[0004]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has solved the above-mentioned problems. Further, in addition to the pattern workability, the solvent resistance of the obtained resin composition has been greatly improved, An object of the present invention is to provide a polybenzoxazole-based positive photosensitive resin precursor composition that is developable, and has excellent pattern processability and solvent resistance.

[0005]

According to the present invention, there is provided a compound represented by the general formula (1):
A polybenzoxazole precursor composition having a structural unit represented by the following formula as a main component, wherein the positive-type photosensitive resin precursor composition comprises the polybenzoxazole precursor composition and an o-quinonediazide compound. Things.

[0006]

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Wherein R ² is at least 2
A trivalent to hexavalent organic group having at least two carbon atoms. n represents an integer from 10 to 100,000, and p represents an integer from 1 to 4. R ³ and R ⁴ are hydrogen, carbon number 1
Represents any one of organic groups, nitro groups, halogens, and perfluoroalkyl groups from 1 to 10, which may be the same or different. x and y each represent an integer of 1 to 4. )

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION The polymer having a structural unit represented by the general formula (1) as a main component in the present invention is a polymer which can be converted into a polymer having an oxazole ring by heating or an appropriate catalyst. By having a ring structure, heat resistance and solvent resistance are dramatically improved.

The above formula (1) represents a polyamide having a hydroxyl group. In particular, among the hydroxyl groups, phenolic hydroxyl groups are preferable in terms of solubility in an aqueous alkaline solution.

In the above general formula (1), R ¹ represents a structural component of an acid;

[0011]

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[0012] R ³ and R ^{4 each} represent hydrogen, an organic group having 1 to 10 carbon atoms, a nitro group, a halogen, or a perfluoroalkyl group, which may be the same or different. x and y each represent an integer of 1 to 4. By using such a dicarboxylic acid, the resistance to an organic solvent required in the process of manufacturing an interlayer insulating film is dramatically improved. Specific examples include the following compounds, but are not limited thereto.

[0013]

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Among them, particularly preferred are the structures shown below. By using these, polybenzoxazole having excellent solvent resistance is enhanced in the linearity of the main chain, the interaction between molecules is strengthened. Can be obtained.

[0015]

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In the above general formula (1), R ² (OH) p represents a structural component of a diamine. In this, R ² (O
H) As a preferred example of p, those having an aromatic group and a hydroxyl group are preferable in view of the heat resistance of the obtained polymer, and specific examples thereof include bis (amino-hydroxy-phenyl) having a fluorine atom. Hexafluoropropane residue, a compound having no fluorine atom, such as diaminodihydroxypyrimidine residue, diaminodihydroxypyridine residue, hydroxy-diamino-pyrimidine residue, diaminophenol residue, dihydroxybenzidine residue, etc. Structures can be given.

[0017]

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F is an integer of 1 to 4, g and h are integers of 0 to 4, and g + h is 1 or more.

Among them, those having a structure capable of dehydrating and ring-closing by heat treatment and converting all amide bonds into oxazole rings are preferable for improving the solvent resistance after oxazole formation. Structure can be mentioned.

[0020]

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Further, as the R ² component,
A diamine having a hydroxyamide structure or a diamine having no hydroxyl group can be modified by 1 to 40 mol% of the diamine component.

[0022]

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[0023]

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[0024]

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Here, R is hydrogen or a group having 1 to 10 carbon atoms.
Up to organic groups.

Further, in order to improve the adhesion to the substrate, an aliphatic group having a siloxane structure may be copolymerized in R ¹ and R ² (OH) p as long as the heat resistance is not reduced. Specifically, examples of R ¹ include those obtained by copolymerizing 1 to 20 mol% of the following compounds.

[0027]

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R represents hydrogen or an organic group having 1 to 10 carbon atoms.

As the R ² (OH) p component, bis (3-aminopropyl) tetramethyldisiloxane residue, bis (4-aminophenyl) octamethylpentasiloxane residue, α, ω-bis (3-aminopropyl) residue ) Permethylpolysiloxane residues copolymerized at 1 to 20 mol%.

The polymer according to the present invention has the general formula (1)
Or a copolymer or a blend with other structural units. In this case, it is preferable that the content of the structural unit represented by the general formula (1) is 90 mol% or more. The type and amount of the structural unit used in the copolymerization or blending are preferably selected within a range that does not impair the heat resistance of the polybenzoxazole-based polymer obtained by the final heat treatment.

The positive photosensitive resin precursor composition of the present invention can be prepared by a method comprising reacting a dicarboxylic acid dichloride and a diamine compound at a low temperature in the presence of an organic alkali, an inorganic alkali or an epoxy compound, and a method comprising reacting a dicarboxylic acid with a diamine and a condensing agent. It can be synthesized by a method of reacting in the presence.

In the present invention, the o-quinonediazide compound is preferably a compound having a phenolic hydroxyl group and a sulfonylic acid of naphthoquinonediazide bonded by an ester. Examples of the sulfonyl group of naphthoquinonediazide include a 4-naphthoquinonediazidosulfonyl group and a 5-naphthoquinonediazidosulfonyl group.
The 4-naphthoquinonediazidosulfonyl group has absorption in the i-line region of a mercury lamp and is suitable for i-line exposure.
The absorption of the naphthoquinonediazidosulfonyl group extends to the g-line region of a mercury lamp, and is suitable for g-line exposure. In the present invention, a 4-naphthoquinonediazidosulfonyl group,
Either of the 5-naphthoquinonediazidosulfonyl groups can be preferably used.
It is preferable to select a -naphthoquinonediazidosulfonyl group or a 5-naphthoquinonediazidosulfonyl group. In addition, a 4-naphthoquinonediazidosulfonyl group and a 5-naphthoquinonediazidosulfonyl group can be introduced together in the same molecule, or a photosensitive agent having a 4-naphthoquinonediazidosulfonyl group introduced as a photosensitive group and Photosensitive agents having a group introduced as a photosensitive group may be mixed and used.

Specific examples of the o-quinonediazide compound include the following, but are not limited thereto.

[0034]

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If necessary, surfactants, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ethanol for the purpose of improving the wettability between the positive photosensitive resin precursor composition and the substrate. Alcohols, ketones such as cyclohexanone and methyl isobutyl ketone, and ethers such as tetrahydrofuran and dioxane. In addition, inorganic particles such as silicon dioxide and titanium oxide, or powder of polyimide can also be added.

Further, in order to enhance the adhesion to an underlying substrate such as a silicon wafer, a silane coupling agent, a titanium chelating agent and the like are added to the varnish of the positive photosensitive resin precursor composition in an amount of 0.5 to 10% by weight. Alternatively, the underlying substrate can be pre-treated with such a chemical solution.

When added to the varnish, a silane coupling agent such as methylmethacryloxydimethoxysilane, 3-aminopropyltrimethoxysilane, etc., a titanium chelating agent and an aluminum chelating agent are added to the polymer in the varnish in an amount of 0.5 to 10%. % By weight. In addition, 1 to 30% by weight of a silicone-modified polyimide may be blended or copolymerized.

When treating the substrate, the above-mentioned coupling agent is added to a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, diethyl adipate, etc. The solution in which 5 to 20% by weight is dissolved is subjected to surface treatment by spin coating, dipping, spray coating, steam treatment, or the like. In some cases, then 50 ° C to 300 ° C
The reaction between the substrate and the coupling agent proceeds by applying a temperature up to

Next, a method of forming a heat-resistant resin pattern using the positive photosensitive resin precursor composition of the present invention will be described.

The positive photosensitive resin precursor composition is applied on a substrate. As the substrate, a silicon wafer, ceramics, gallium arsenide, or the like is used, but is not limited thereto. Examples of the coating method include spin coating using a spinner, spray coating, and roll coating. The coating thickness is different depending on the coating method, the solid concentration of the composition, the viscosity, and the like.
It is applied so as to have a thickness of 0.1 to 150 μm.

Next, the substrate coated with the positive photosensitive resin precursor composition is dried to obtain a positive photosensitive resin precursor composition film. Drying is preferably performed using an oven, a hot plate, infrared rays or the like at a temperature in the range of 50 to 150 degrees for 1 minute to several hours.

Next, the positive photosensitive resin precursor composition film is exposed to actinic radiation through a mask having a desired pattern to expose the film. Actinic rays used for exposure include ultraviolet rays, visible rays, electron beams, and X-rays. In the present invention, i-line (365 nm) and h-line (405 n) of a mercury lamp are used.
m) and g-line (436 nm) are preferably used.

The pattern of the heat-resistant resin is formed by removing the exposed portion using a developing solution after the exposure. As a developing solution, an aqueous solution of tetramethylammonium, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylamine An aqueous solution of an alkaline compound such as aminoethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine is preferred. In some cases, a polar solvent such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, dimethylacrylamide, methanol, ethanol, Even if alcohols such as isopropanol, ethyl lactate, esters such as propylene glycol monomethyl ether acetate, ketones such as cyclopentanone, cyclohexanone, isobutyl ketone and methyl isobutyl ketone are used alone or in combination of several kinds. Good. After development, it is rinsed with water. Here, rinsing treatment may be performed by adding alcohols such as ethanol and isopropyl alcohol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate to water.

After development, the film is converted into a heat-resistant resin film by applying a temperature of 200 to 500 degrees. This heat treatment is carried out for 5 minutes to 5 hours while selecting the temperature and increasing the temperature stepwise, or while selecting a certain temperature range and continuously increasing the temperature. As an example, heat treatment is performed at 130 degrees, 200 degrees, and 350 degrees for 30 minutes each. Alternatively, a method of linearly raising the temperature from room temperature to 400 ° C. over 2 hours may be used.

The heat-resistant resin precursor composition undergoes dehydration and ring closure by heat treatment and shrinks on a substrate such as a silicon wafer to generate residual stress. However, it is preferable that the residual stress is small to reduce the warpage of the substrate. Specifically, 55MP
a or less, and even more preferably 50 MPa or less so that even if the substrate is as large as a 12-inch silicon wafer, there is no problem in warpage.

The heat-resistant resin film formed by the positive photosensitive resin precursor composition according to the present invention is used for applications such as a passivation film of a semiconductor, a protective film of a semiconductor element, and an interlayer insulating film of a multilayer wiring for high-density mounting. Can be

[0047]

EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. The evaluation of the photosensitive resin precursor composition in the examples was performed by the following method.

Preparation of Photosensitive Polybenzoxazole Precursor Composition Film A photosensitive resin precursor composition (hereinafter referred to as varnish) was pre-baked on a 6-inch silicon wafer to a thickness of 9 μm.
And then prebaked at 120 ° C. for 3 minutes using a hot plate (Mark-7, manufactured by Tokyo Electron Ltd.) to obtain a photosensitive polybenzoxazole precursor composition film.

Measurement of Film Thickness Lambda Ace STM-6 manufactured by Dainippon Screen Mfg. Co., Ltd.
After the application and development, the film was measured at a refractive index of 1.64, and the cured film was measured at a refractive index of 1.78.

Exposure Exposure machine (i-line stepper DSW-8000 manufactured by GCA)
The reticle with the pattern cut was set therein, and an i-line exposure was performed for an exposure time of 1000 msec (500 mJ / cm ² ).

Development Using a developing device of Mark-7 manufactured by Tokyo Electron Co., Ltd., the tetramethylammonium hydroxide was used at 50 rotations.
A 38% aqueous solution was sprayed for 10 seconds. After this, 6
Let stand for 0 second, rinse with water at 400 rotations, 300
The mixture was shaken off at 0 rotation for 10 seconds and dried.

Calculation of residual film ratio The residual film ratio was calculated according to the following equation. Residual film ratio (%) = film thickness after development / film thickness after pre-bake × 1
00 Calculation of Resolution After exposure and development, the minimum pattern size in which the exposed portion dissolved up to the substrate was defined as the resolution.

Cure The prepared photosensitive polybenzoxazole precursor composition film is applied to an inert oven IN manufactured by Koyo Lindberg Co., Ltd.
Using H-21CD, under a nitrogen stream (oxygen concentration 20 pp
m), at 140 ° C. for 30 minutes, and then heated to 350 ° C. for 1 hour and heat-treated at 350 ° C. for 1 hour to produce a cured film.

Evaluation of Solvent Resistance A 5 μm thick polybenzoxazole film formed on a 6-inch silicon wafer by the above-mentioned coating and curing was applied.
After immersing in N-methylpyrrolidone (NMP) at 00 ° C. for 30 minutes and rinsing with pure water, the state of the film was observed with an optical microscope, the film thickness was measured, and the solvent-resistant residual film ratio was calculated. .
The film thickness was set to 0 μm when a crack occurred, and in other cases, the average value was measured at a total of 9 points of 0 cm, ± 2.5 cm, ± 5 cm from the center in the diameter direction parallel to and perpendicular to the wafer orientation flat. The solvent-resistant residual film ratio was calculated according to the following equation: Solvent-resistant residual film ratio (%) = film thickness after treatment / film thickness before treatment × 100.

Measurement of Residual Stress A thickness of 7 was formed on a 4-inch silicon wafer by the above coating.
A polybenzoxazole precursor composition film having a thickness of μm was prepared, and using FLX-2300 manufactured by KLA Tencor Co., Ltd., the temperature was raised under the above-described curing conditions under a nitrogen stream, and then the temperature was lowered in the reverse order of the conditions and measured. did.

Synthesis Example 1 Synthesis of quinonediazide compound (1) 15.31 g (0.05 mol) of TrisP-HAP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) and 5-naphthoquinonediazidosulfonyl chloride in a stream of dry nitrogen 40.28g
(0.15 mol) was dissolved in 450 g of 1,4-dioxane and brought to room temperature. Here, 50 g of 1,4-dioxane
In the system, 15.18 g of triethylamine mixed with
The solution was dropped so as not to reach 5 ° C. or higher. 2 at 40 ° C after dropping
Stirred for hours. The triethylamine salt was filtered, and the filtrate was poured into water. Thereafter, the deposited precipitate was collected by filtration.
The precipitate was dried with a vacuum drier to obtain a quinonediazide compound (1).

[0057]

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Synthesis Example 2 Synthesis of quinonediazide compound (2) 11.41 g of bisphenol A under a dry nitrogen stream
(0.05 mol) and 26.86 g (0.1 mol) of 5-naphthoquinonediazidosulfonyl chloride were dissolved in 450 g of 1,4-dioxane, and the mixture was brought to room temperature. here,
Using 10.12 g of triethylamine mixed with 50 g of 1,4-dioxane, a quinonediazide compound (2) was obtained in the same manner as in Synthesis Example 5.

[0059]

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Example 1 18.3 g of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane under a stream of dry nitrogen
(0.05 mol) was dissolved in 50 g of NMP and 26.4 g (0.3 mol) of glycidyl methyl ether, and the temperature of the solution was cooled to -15 ° C. Here, 4,4'-biphenyldicarboxylic acid dichloride (manufactured by Nippon Agrochemical Co., Ltd.) 13.
A solution of 96 g (0.05 mol) dissolved in 40 g of NMP was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was continued at -15 ° C for 6 hours.

After completion of the reaction, the solution was poured into 3 l of water to collect a white precipitate. The precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80 ° C. for 20 hours.

The polymer powder 1 thus obtained
0.0 g was dissolved in 30 g of γ-butyrolactone (GBL) to obtain a polymer solution A. Using the obtained polymer solution, a polybenzoxazole precursor composition film was formed on a silicon wafer as described above, cured, and subjected to solvent resistance evaluation and residual stress measurement.

Subsequently, 2 g of the quinonediazide compound (1) was dissolved in the polymer solution A to obtain a varnish A of a photosensitive polybenzoxazole precursor composition. As described above, using the obtained varnish, a photosensitive polybenzoxazole precursor composition film was formed on a silicon wafer, exposed, developed, evaluated for the developability of the varnish, and after curing,
The solvent resistance was evaluated.

Example 2 In the polymer synthesis of Example 1, 2,2-bis (3-amino-
4-Hydroxyphenyl) hexafluoropropane is replaced by 3,3'-diamino-4,4'-dihydroxybiphenyl, and 4,4'-biphenyldicarboxylic acid dichloride is replaced by 3,4'-biphenyldicarboxylic acid dichloride. Other than the above, a polymer solution B was obtained in the same manner as in Example 1, and the solvent resistance was evaluated and the residual stress was measured in the same manner as in Example 1.

Subsequently, 2 g of the quinonediazide compound (2) was dissolved in the polymer solution B to obtain a varnish B of a photosensitive polybenzoxazole precursor composition. The developability of the varnish and the solvent resistance after curing were evaluated in the same manner as in Example 1 using the obtained varnish.

Example 3 1-hydroxybenzotriazole 2 in a stream of dry nitrogen
7.02 (0.20 mol) and 15.82 g of pyridine
(0.20 mol) was dissolved in 200 g of NMP, and 3,3′-biphenyldicarboxylic acid dichloride 2 was dissolved in an ice bath.
A solution of 7.92 g (0.10 mol) dissolved in 40 g of NMP was added dropwise so that the internal temperature did not exceed 0 ° C.
After completion of the dropwise addition, stirring was continued at -5 ° C for 2 hours. After completion of the reaction, the hydrochloride was filtered off, and the filtrate was poured into water. afterwards,
The deposited precipitate was collected by filtration. 23.81 g of a dicarboxylic acid derivative obtained by drying the precipitate with a vacuum dryer.
(0.05 mol) and 18.3 g of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane
(0.05 mol) was dissolved in 100 g of NMP, and stirring was continued at 75 ° C. for 12 hours. After completion of the reaction, the reaction mixture was filtered and then poured into 3 l of a mixed solution of water / methanol = 3/1 to collect a white precipitate. This precipitate is collected by filtration,
After washing with water three times, it was dried in a vacuum dryer at 80 ° C. for 20 hours.

A polymer solution C was obtained from the obtained polymer powder in the same manner as in Example 1, and the solvent resistance was evaluated and the residual stress was measured in the same manner as in Example 1.

Subsequently, MG-300 (manufactured by Toyo Gosei Kogyo KK) 2 as a quinonediazide compound was added to the polymer solution C.
g was dissolved to obtain a varnish C of a photosensitive polybenzoxazole precursor composition. The developability of the varnish and the solvent resistance after curing were evaluated in the same manner as in Example 1 using the obtained varnish.

Comparative Example 1 A polymer solution D was prepared in the same manner as in Example 1 except that 4,4′-biphenyldicarboxylic acid dichloride was used instead of 4,4′-biphenyldicarboxylic acid dichloride in the polymer synthesis of Example 1. The solvent resistance was evaluated and the residual stress was measured in the same manner as in Example 1.

Subsequently, 2 g of the quinonediazide compound (1) was dissolved in the polymer solution D to obtain a varnish D of a photosensitive polybenzoxazole precursor composition. The developability of the varnish and the solvent resistance after curing were evaluated in the same manner as in Example 1 using the obtained varnish.

Comparative Example 2 Polymer solution E was prepared in the same manner as in Example 1 except that 4,4'-biphenyldicarboxylic acid dichloride was used instead of 4,4'-biphenyldicarboxylic acid dichloride in the polymer synthesis of Example 1. And evaluated for solvent resistance and measured residual stress in the same manner as in Example 1.

Subsequently, 2 g of MG-300 as a quinonediazide compound was dissolved in the polymer solution E to obtain a varnish E of a photosensitive polybenzoxazole precursor composition. The developability of the varnish and the solvent resistance after curing were evaluated in the same manner as in Example 1 using the obtained varnish.

Comparative Example 3 Terephthalic acid dichloride 1 was used in place of 3,3'-biphenyl dicarboxylic acid dichloride in the polymer synthesis of Example 3.
Except that 6.24 g (0.08 mol) and 4.06 g (0.02 mol) of isophthalic dichloride were used, a polymer solution F was obtained in the same manner as in Example 3, and the solvent resistance was evaluated in the same manner as in Example 1. And residual stress measurement.

Subsequently, 2 g of the quinonediazide compound (1) was dissolved in the polymer solution F to obtain a varnish F of a photosensitive polybenzoxazole precursor composition. The developability of the varnish and the solvent resistance after curing were evaluated in the same manner as in Example 1 using the obtained varnish.

The evaluation results of Examples 1 to 3 and Comparative Examples 1 to 3 are shown in Table 1 below.

[0076]

[Table 1]

[0077]

According to the present invention, it is possible to obtain a positive photosensitive polybenzoxazole precursor composition which can be developed with an aqueous alkali solution, has excellent solvent resistance and low residual stress.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/027 H01L 21/312 D 21/312 A 21/30 502R F-term (Reference) 2H025 AA00 AA06 AB16 AC01 AD03 BE01 CB26 FA03 FA17 FA29 4J002 CM021 EE056 EQ016 EV216 FD206 GP03 4J043 PA01 PA19 PC015 PC065 PC135 PC145 PC165 RA05 RA52 SA06 SB01 SB02 TA12 TA26 TB01 TB02 UA121 UA131 UA132 UA361 UA381 UB011 ZUBA13B12A UB021 ZUBA1A AF04 AG01 AH02 AH03

Claims (2)

[Claims] 1. A polybenzoxazole precursor composition comprising a structural unit represented by the general formula (1) as a main component. Embedded image And R ² represents a trivalent to hexavalent organic group having at least two or more carbon atoms. n represents an integer from 10 to 100,000, and p represents an integer from 1 to 4. R ³ and R ^{4 each} represent hydrogen, an organic group having 1 to 10 carbon atoms, a nitro group, a halogen, or a perfluoroalkyl group, which may be the same or different. x and y each represent an integer of 1 to 4. ) 2. A positive photosensitive resin precursor composition comprising the polybenzoxazole precursor composition according to claim 1 and an o-quinonediazide compound.