JP2001244561A - Semiconductor light emitting device and method of manufacturing semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method wherein a semiconductor light emitting device having a window structure is easily manufactured without a high level process technique. SOLUTION: Mask patterns 2 are formed on a surface of a substrate 1 which is composed of GaAs and has the surface slanted to a crystal face, and an epitaxial layer 3 is grown on the surface of the substrate 1 sandwiched by the mask patterns 2. The epitaxial layer 3 is eliminated by etching, a worked region 1a is formed, the mask patterns 2 are eliminated, and primary surface regions 1b are exposed on both sides of the worked region 1a. A multilayer film constituted of a lower clad layer, an active layer and an upper clad layer is formed on the substrate 1, and a current injection layer which is stretched to the primary surface regions 1b on both sides of the worked region 1a is formed on the multilayer film, in a state of crossing the worked region 1a.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a semiconductor light emitting device using a compound semiconductor substrate of gallium arsenide or the like having a surface inclined with respect to a crystal plane and a method of manufacturing the same. About.

[0002]

2. Description of the Related Art CD (Compact Disk), DVD (Digita
l An optical pickup device used for writing (recording) and reading (reproduction) on an optical recording medium such as a versatile disk is equipped with a semiconductor light emitting device (so-called semiconductor laser).

FIG. 10 shows an example of the configuration of this semiconductor light emitting device. The semiconductor light emitting device shown in FIG. 1 is formed on a substrate 101 made of, for example, n-type GaAs (gallium-arsenic) via a buffer layer (not shown) through an Al layer.
N made of GaAs (aluminum-gallium-arsenic)
A multilayer film pattern is formed by sequentially laminating a lower cladding layer 102 of a mold, an active layer 103 of a quantum well structure made of AlGaAs, and an upper cladding layer 104 of a p-type made of AlGaAs. A single current injection layer 105 made of p-type GaAs is formed on the upper cladding layer 104.
Are extended in the depth direction of the drawing, for example, so as to be sandwiched between insulating regions 106, thereby forming a current confinement layer (a so-called stripe) 103 a in the active layer 103. Further, by using the end faces of the multilayer film pattern at both ends in the extending direction of the current injection layer 105 as cleavage planes, the active layer 103 has a resonator structure, and the laser light generated here is resonated and extracted from the cleavage plane. It is supposed to be.

In the semiconductor light emitting device having such a structure, the band gap near the cleavage plane is limited to the central region due to the interface state near the cleavage plane of the active layer 103, poor heat brushing, high light density, and the like. There is a problem that it becomes smaller than the band gap. Therefore, stripe 10
Emission light generated near the center of 3a was easily absorbed near the cleavage plane, causing a large amount of heat generation, limiting the maximum oscillation output, and causing end face destruction.

Therefore, a so-called window structure has been proposed in which the band gap near the cleavage plane of the active layer 103 is increased. The semiconductor light emitting device having this window structure has a structure in which the cleavage plane side of the multilayer film pattern is buried with a material having a high band gap, or an impurity is diffused into the cleavage plane side end of the multilayer film pattern to form the active layer 103. The superlattice structure is broken and the bandgap is increased.

[0006]

However, forming a window structure having such a structure requires complicated steps and requires high-precision process technology. This is a factor that causes an increase and a decrease in yield.

For example, when forming a semiconductor light emitting device that emits red laser light, Zn (zinc) is diffused as an impurity into the active layer near the cleavage plane. However, Zn easily forms a non-light-emitting sensor in the active layer, and if present in a light-emitting region, causes deterioration and causes a reduction in reliability. For this reason, the amount of Zn to be diffused is set to be relatively large in the vicinity of the cleavage plane in order to increase the band gap, but should be hardly diffused to the central region of the active layer which is a light emitting region. Therefore, an advanced process technology for precisely controlling the diffusion region and the diffusion distance of Zn is required.

Accordingly, an object of the present invention is to provide a semiconductor light emitting device in which a window structure can be easily provided without requiring advanced process technology, and a method of manufacturing the same.

[0009]

According to the present invention, there is provided a semiconductor light emitting device comprising: a compound semiconductor having a surface inclined with respect to a crystal plane; A multilayer film pattern in which a layer, an active layer, an upper cladding layer, and the like are sequentially laminated is provided, and a single current injection layer is provided thereon. The surface of the substrate etches an epitaxial layer grown on the substrate. It is characterized in that it has a processing region to be removed and initial surface regions located on both sides of the processing region. In the multilayer pattern, both ends in the extending direction of the current injection layer are provided on the initial surface region, and the center is provided on the processing region.

A method for manufacturing a semiconductor light emitting device according to the present invention is a method for manufacturing a semiconductor device having such a configuration, and is characterized in that it is performed as follows. First, a mask pattern is formed on the surface of the substrate, and an epitaxial layer is grown on the exposed surface of the substrate sandwiched between the mask patterns. Next, a processed region is formed on the surface of the substrate by etching away the epitaxial layer, and an initial surface region of the substrate is exposed on both sides of the processed region by removing the mask pattern. Thereafter, a multilayer film is formed on the substrate, and a current injection layer is formed on the multilayer film so as to extend across the processing region to the initial surface regions on both sides.

In the semiconductor light emitting device having such a configuration, the central portion of the stripe in the active layer formed along the current injection layer is constituted by the active layer portion of the multilayer film pattern formed on the processing region, Both ends of the stripe are constituted by the active layer portions of the multilayer film pattern formed on the initial surface region. Here, as shown in the graph of FIG. 5, compared with the emission wavelength λb of the active layer in the multilayer film formed on the initial surface region, the light emission in the active layer in the multilayer film formed on the processing region is compared. It has been experimentally found that the wavelength λa becomes longer. For this reason, in the stripe of the semiconductor light emitting device, the emission wavelength at the central portion formed on the processing region is long (that is, the band gap is small), and the light emission at both end portions formed on the initial surface region 1b. The wavelength is short (that is, the band gap is large). Therefore, this semiconductor light emitting device
It has a window structure.

According to the manufacturing method of the present invention, since the current injection layer is formed on the multilayer film in a state of extending over the initial surface region on both sides across the processing region, the current injection layer is formed on the initial surface region. By patterning (cleaving) the current injection layer and the multilayer film so as to intersect with the direction in which the current injection layer extends, a semiconductor light emitting device in which the end of the current injection layer in the extension direction is provided on the initial surface region is obtained. Can be Therefore, a semiconductor light emitting device having the above-described window structure can be obtained only by adding simple steps such as formation of a mask pattern, formation of an epitaxial layer, and removal by etching.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a semiconductor light emitting device and a method for manufacturing the same according to the present invention will be described below in detail with reference to the drawings.

(First Embodiment) FIGS. 1 to 4 are diagrams for explaining a first embodiment of the present invention, and the manufacturing method will be described below in order with reference to these drawings.

First, as shown in FIG.
An n-type substrate 1 made of a compound semiconductor such as As is prepared. The substrate 1 is a so-called OFF substrate having a surface having an inclination angle (OFF angle) with respect to the GaAs crystal plane. Here, the GaAs (001)
Plane crystal orientation [011] or [011 -] ^{however (-) able to be logical negation symbol that means an inverted} approximately 15 degrees 3 degrees in the direction, of preferably 10 degrees O
An OFF substrate having a surface having an FF angle is used.

Then, a mask pattern 2 made of a silicon oxide-based material or a silicon nitride-based material is formed on the surface of the substrate 1. The mask pattern 2 is provided so as to extend in a direction perpendicular to the stripe of the semiconductor light emitting device formed here, and is formed by patterning a silicon oxide-based film or a silicon nitride-based film formed on the substrate 1. It is formed by doing. Here,
The stripes of the semiconductor light emitting device extend in a direction perpendicular to the inclination direction of the crystal orientation of the substrate 1. Therefore, the mask pattern 2 extends in the direction of inclination of the crystal orientation of the substrate 1.

Next, as shown in FIG. 1 (2), for example, metal organic vapor phase epitaxy (MOVPE: Metal
An epitaxial layer 3 having a thickness of several μm is selectively grown on the exposed surface of the substrate 1 by an epitaxial growth method such as Organic Vapor Phase Epitaxial growth).
The epitaxial layer 3 may be any material layer such as GaAs, AlGaAs or AlGaInP (aluminum-gallium-indium-phosphorus) that can be epitaxially grown on the substrate 1.

Thereafter, as shown in FIG. 1 (3), the surface of the substrate 1 is exposed by removing the epitaxial layer (3) formed in the previous step by etching.
A processing region 1a is formed on the surface by removing the epitaxial layer by etching. At this time, the epitaxial layer (3)
Is formed of AlGaAs or AlGaInP, selective etching is performed using, for example, a sulfuric acid-based etching solution or a hydrofluoric acid-based etching solution. When the epitaxial layer (3) is made of p-type GaAs,
Selective etching is performed using a potassium ferricyanide / potassium hydroxide solution as an etchant. Further, when the epitaxial layer (3) is made of n-type GaAs, the etching is performed by controlling the etching time using an ammonia-based etchant.

Next, as shown in FIG.
The mask pattern (2) is etched away from the surface to expose the initial surface area 1b on the surface of the substrate 1. When the mask pattern is made of silicon oxide and a hydrofluoric acid-based etchant is used for etching and removing the epitaxial layer, the mask pattern is also etched and removed in the step of removing and etching the epitaxial layer.

As described above, as shown in the plan view of FIG. 2, the surface of the substrate 1 is protected by the processing region 1a obtained by etching and removing the epitaxial layer (3) and the mask pattern (2). Initial surface area 1b
And are alternately arranged. In addition, A- of FIG.
An A ′ cross section corresponds to FIG.

Here, the area indicated by the two-dot chain line a in FIG. 2 is an area for one conductive light emitting device formed in the following steps to be performed subsequently. Then, the planned stripe portion b of the semiconductor light emitting device is arranged in a direction intersecting with the extending direction of the processing region 1a and the initial surface region 1b. Further, an extension of arrow c in the figure, that is, the vicinity of the center of the initial surface region 1b will be an end face of the semiconductor light emitting device, that is, a cleavage plane in the future.

After the above, the processing area 1a and the initial surface area 1
For example, a buffer layer formed by sequentially stacking n-type GaAs (not shown) and n-type InGaP (indium-gallium-phosphorus), which is not shown here, is formed on the substrate 1 having b. Then, as shown in FIG. 3 (corresponding to the AA ′ cross section in FIG. 2) and FIG. 4 (corresponding to the BB ′ cross section in FIG. 2), via the above-described buffer layer (not shown), An n-type lower cladding layer 5 made of, for example, AlGaInP, a single-layer or multi-layer AlGaInP (or InG
aP) quantum well structure (emission wavelength region 650 nm)
The active layer 6, a p-type upper cladding layer 7 made of AlGaInP, and a p-type cap layer 8 made of GaAs are sequentially laminated to form a multilayer film. If necessary, a guide layer having an intermediate composition between them is provided between the lower clad layer 5 and the active layer 6, and a guide layer having the intermediate composition is provided between the active layer 6 and the upper clad layer 7. Shall be provided. The formation of each of these layers is performed, for example, by MOVP.
It is performed by an epitaxial growth method such as E.

Next, impurities are introduced by ion implantation from the surface of the cap layer 8 to a depth in the middle of the p-type cladding layer 7 with the portion of the cap layer 8 serving as the current injection layer 8a protected by the resist pattern. . As a result, the insulating region 9 is formed at the impurity introduction portion, and the current injection layer 8a formed by patterning the cap layer 8 is formed.
A plurality of the current injection layers 8a are provided along the predetermined stripe portions b shown in FIG. 2, whereby one stripe 6a is formed in the active layer 6 of each semiconductor light emitting device region a (see FIG. 2). Is done. This stripe 6a is
The surface is extended in a direction intersecting the extending direction of the processed region 1a and the initial surface region 1b.

After the above, although not shown here, Ti (titanium) / Pt is connected to the current injection layer 8a.
A p-type electrode such as (platinum) / Au (gold) is formed, and AuGe is connected to an n-type substrate 1.
(Gold-germanium) / Ni (nickel) / Au (gold)
An n-type electrode is formed as shown in FIG. In a state in which the plurality of current injection layers 8a formed on the substrate 1 are divided into individual lines, the electrodes and the layers 5 to 7 are patterned and the substrate 1 is separated and divided.

Next, each cleavage line c at the center of the initial surface region 1b
The current injection layer (8a) and the stripe (6a)
The substrate 1 and its upper part are cleaved in a direction intersecting the direction in which the semiconductor light emitting device is extended, thereby forming a multilayer film pattern P formed by patterning each of the layers 5 to 7, whereby each semiconductor light emitting device made of an AlGaInP-based quaternary material is formed. Finalize.

In the semiconductor light emitting device obtained in this manner, the vicinity of the cleavage plane at both ends of the stripe 6a is formed on the initial surface region 1b, and the vicinity of the center is formed on the processing region 1a.

FIG. 5 shows a multilayer film (5) of each AlGaInP-based semiconductor light emitting device similar to the first embodiment.
7 shows measurement results of the emission wavelength of photoluminescence in the active layer 6 in (7) to (7). In this figure, part A indicates the emission wavelength of each part of the active layer in the multilayer film formed directly on the processing region. Part B indicates the emission wavelength of each part of the active layer in the multilayer film on the epitaxial layer left adjacent to the processing region.

As shown in this figure, the emission wavelength λa of the active layer in the multilayer film (part A) formed on the processing region is:
It becomes about 666 nm. This is because the emission wavelength λb of the multilayer film formed on the initial surface region of the substrate is 656 nm.
It can be seen that the value is about 10 nm larger than that of FIG. That is, a multilayer film having a longer emission wavelength and a smaller band gap than the initial surface region is formed on the processing region.

From this, in the stripe 6a of the semiconductor light emitting device of the first embodiment, the emission wavelength at the center formed on the processing region 1a is long (that is, the band gap is small), and the stripe 6a is formed on the initial surface region 1b. The light emission wavelength of the formed both ends is short (that is, the band gap is large). Therefore, this semiconductor light emitting device has a window structure.

That is, according to the first embodiment, a simple process such as formation of a mask pattern by rough positioning, formation of an epitaxial layer, and removal of these by etching without adding a high-precision process. Only by the addition of the above, it becomes possible to obtain a semiconductor light emitting device having a window structure.

In the first embodiment, FIG. 1 (2)
Although the entire epitaxial layer 3 formed by the above is removed by etching, the epitaxial layer 3 may be etched while partially remaining. For example, as shown in FIG. 6, the epitaxial layer 3 may be left on portions of the substrate 1 on both sides of the predetermined stripe portion b. In such a case, by removing the epitaxial layer 3 near the cleavage line c,
In the subsequent cleavage step, the cleavage site can be easily recognized.

(Second Embodiment) FIGS. 7 and 8 are views for explaining a second embodiment of the present invention. here,
An embodiment in which the present invention is applied to a semiconductor light emitting device in which semiconductor lasers of different wavelengths (first laser and second laser) are mounted on one chip will be described in order from the manufacturing method. Note that the cross-sectional views in each drawing are A-
A 'section. Further, the same parts as those in the first embodiment are denoted by the same reference numerals and will be described.

First, as shown in FIG. 7A, an OFF substrate (substrate) made of n-type GaAs as in the first embodiment.
1, a mask pattern 2 ′ (shown only in a plan view) made of a silicon oxide-based material or a silicon nitride-based material is formed on the surface of the substrate 1. Here, when the region shown by the two-dot chain line a in the figure is a region for one semiconductor light emitting device formed in the following steps to be performed subsequently,
In this semiconductor light emitting device region a, two stripe-predicted portions b of the semiconductor light emitting device and a pair of mask patterns 2 ′ are arranged. These mask patterns 2 'are 2
On a portion on which one of the stripe-predicted portions b is arranged, the stripe-shaped portions are provided at both ends of the semiconductor light emitting device region a at a predetermined interval. The mask pattern 2 ′ is formed by patterning a silicon oxide-based film or a silicon nitride-based film formed on the substrate 1.

Next, on the exposed surface of the substrate 1, for example, MO
An epitaxial layer 3 'made of n-type AlGaAs is selectively grown by an epitaxial growth method such as VPE. This epitaxial layer 3 'also serves as the first lower cladding layer, and if necessary, n-type Al
A stacked structure in which a buffer layer made of n-type AlGaAs is epitaxially grown on a GaAs base may be used.

Thereafter, as shown in FIG. 7B, the mask pattern 2 ′ (shown only in the plan view) and the epitaxial layer 3 ′ are covered on the substrate 1 by an epitaxial growth method such as MOVPE. Quantum well structure (oscillation wavelength 780 n
The first active layer 16 (m band), the p-type first upper cladding layer 17 made of AlGaAs, and the p-type first cap layer 18 made of GaAs are sequentially laminated. If necessary, a guide layer having an intermediate composition between the epitaxial layer 3 ′ and the first active layer 16 is provided between the epitaxial layer 3 ′ and the first active layer 16.
A guide layer having an intermediate composition between them is provided between the first upper clad layer 6 and the first upper clad layer 17.

Next, as shown in FIG. 7 (3), a resist pattern (not shown) is formed on the region to be left as the first laser, and this is used as a mask for non-selective etching of sulfuric acid and hydrofluoric acid. The layers from the first cap layer 18 to the epitaxial layer 3 ′ and the mask pattern (2 ′) are removed by etching in a region other than the first laser region by wet etching such as AlGaAs selective etching. Thus, a first multilayer film pattern P1 using a ternary material such as AlGaAs is formed.

The first multilayer film pattern P1 is provided in such a manner that one of the two stripe portions b arranged in the semiconductor light emitting device region, which is arranged on the mask pattern (2 '), is exposed. .

Thus, the surface of the substrate 1 in the region where the second laser is formed is exposed. At this time, the processing region 1a obtained by etching and removing the epitaxial layer (3 ') and the mask pattern (2') are formed on the exposed surface of the substrate 1.
The initial surface area 1b (illustrated only in the plan view) protected by the above is alternately arranged along the extending direction of the pre-striped portion b.

Next, an n-type buffer layer (not shown) formed by laminating InGaP on GaAs is formed so as to cover the first multilayer film pattern P1. Next, FIG.
As shown in the figure, on the substrate 1 via this buffer layer,
For example, the n-type second lower cladding layer 25 made of AlGaInP, a single-layer or multi-layer AlGaInP (or InGa
A second active layer 26 having a quantum well structure (oscillation wavelength 650 nm band) made of GaP), a p-type second upper cladding layer 27 made of AlGaInP, and a p-type second cap layer 28 made of GaAs. A second multilayer film using a quaternary material (above, shown only in the cross-sectional view) is formed.
If necessary, a guide layer having an intermediate composition between them is provided between the second lower clad layer 25 and the second active layer 26, and the guide layer is formed between the second active layer 26 and the second upper clad layer 27. Is to provide a guide layer of these intermediate compositions. These layers are formed by an epitaxial growth method such as the MOVPE method.

Thereafter, a resist pattern (not shown) is formed on a region of the second multilayer film to be left as the second laser,
Using this as a mask, wet etching such as sulfuric acid-based cap etching, phosphate-hydrochloric acid-based quaternary selective etching, and hydrochloric acid-based separation etching is used to etch away the second multilayer film portion other than the second laser region. . As a result, a second multilayer pattern P2 separated from the first multilayer pattern P1 is formed between the first multilayer patterns P1.

Next, as shown in FIG. 8B, a first multilayer film pattern P1 is formed by a resist pattern (not shown).
In a state where a portion serving as a current injection region of the second multilayer pattern P2 is protected, a portion of the first upper cladding layer 17 and the second upper cladding layer 27 from the surface of the first cap layer 18 and the second cap layer 28 is protected. Impurities are introduced by ion implantation to the depth. As a result, insulating regions 19 and 29 are formed at the impurity introduction portions, and a first current injection layer 18a formed by patterning the first cap layer 18 and a second current injection layer formed by patterning the second cap layer 28. 28
a is formed. These current injection layers 18a, 28a
This is provided along the intended stripe portion b shown in FIG. 7A, whereby a single stripe 16a is formed in the first active layer 16 and a single stripe 26a is formed in the second active layer 26. Is done. These stripes 16
a, 26a extend in a direction crossing the processing area 1a on the surface of the substrate 1 and the initial surface area (1b) alternately. In particular, the stripes 26a in the second active layer 26 extend so as to alternately cross the processing region 1a and the initial surface region (1b).

After the above, although not shown here, as in the first embodiment, a p-type electrode such as Ti / Pt / Au is formed in a state of being connected to the current injection layers 8a and 18a. While being connected to the n-type substrate 1, AuGe /
An n-type electrode such as Ni / Au is formed.

Next, the substrate 1 is divided into a set of the first multilayer pattern P1 and the second multilayer pattern P2 provided adjacent to each other.

Thereafter, as shown in FIG. 9 corresponding to the BB 'section of FIG. 8B, the initial surface region 1b intersects with the extending direction of the current injection layers 18a and 28a (see FIG. 2). At the cleavage line c passing through the center of the substrate 1, the second multilayer film pattern P2 and the first multilayer film pattern (P1) not shown here are cleaved to complete each semiconductor light emitting device.

As shown in the sectional view of FIG. 8 (2) and FIG. 9, the semiconductor light emitting device thus obtained comprises: a first laser having a first active layer 16; And a second laser having a second active layer 26 having a different composition.

Here, in particular, the second laser is applied to the second active layer 2.
6 are formed on the initial surface region 1b near the cleavage planes on both ends of the stripe 26a, and the processing region 1a is formed near the center.
It will be the one formed above. Therefore, the second laser has a window structure, similarly to the semiconductor light emitting device of the first embodiment.

Therefore, according to the second embodiment,
Without adding a high-precision process, the second laser is provided with a window structure only by the addition of a simple process such as formation of a mask pattern by rough alignment, formation of an epitaxial layer, and furthermore, removal of these by etching. Thus, a two-wavelength semiconductor light emitting device can be obtained. In addition, a quaternary system (Al
By providing the window structure in the second laser (GaInP), stable emission light can be obtained from the second laser.

In the second embodiment, the first multilayer pattern P1 forming the first laser and the second multilayer pattern P2 forming the second laser are formed by forming a linear line pattern having a constant width. As shown. However, the shape of these patterns P1 and P2 is not limited to a linear line pattern, and a narrow constriction or the like may be formed as necessary.

In the second embodiment, the case where the present invention is applied to a two-wavelength semiconductor light emitting device has been described.
The present invention can be applied to a semiconductor device in which a plurality of semiconductor lasers having the same wavelength are mounted, and to other composite lasers such as an array laser, and similar effects can be obtained.

Further, in each of the above embodiments, Ga
The case where the OFF substrate made of As is used has been exemplified, but the present invention is not limited to this case, and other compound semiconductors, for example, O 2 made of gallium nitride (GaN) are used.
The present invention can be applied to a case where an FF substrate is used, and the same effect can be obtained. However, in this case, the materials such as the cladding layer and the active layer, and the etching solution and the like used for patterning these materials are appropriately selected.

[0051]

As described above, according to the semiconductor light emitting device and the method of manufacturing the same of the present invention, a processing region formed by etching and removing an epitaxial layer is provided on the surface of an OFF substrate, and initial surface regions are arranged on both sides thereof. By adopting a configuration in which the vicinity of the center of the stripe is arranged at the top of the mask, it is possible to form a mask pattern by rough alignment, form an epitaxial layer, and further remove these by etching without adding a high precision process. It is possible to obtain a semiconductor light emitting device having a window structure only by adding the simple steps described above. As a result, it is possible to improve the yield and reduce the manufacturing cost of the semiconductor light emitting device having the window structure.

[Brief description of the drawings]

FIG. 1 is a sectional process view for explaining a first embodiment.

FIG. 2 is a plan view for explaining the first embodiment.

FIG. 3 is a cross-sectional view (part 1) for describing the first embodiment.

FIG. 4 is a sectional view (part 2) for explaining the first embodiment;

FIG. 5 is a diagram illustrating the effect of the present invention.

FIG. 6 is a plan view showing a modification of the first embodiment.

FIG. 7 is a process chart (part 1) for explaining the second embodiment;

FIG. 8 is a process chart (part 2) for explaining the second embodiment;

FIG. 9 is a cross-sectional view illustrating a second embodiment.

FIG. 10 is a cross-sectional view illustrating an example of a conventional semiconductor light emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate, 1a ... Processing area, 1b ... Initial surface area, 2,
2 ': mask pattern, 3, 3': epitaxial layer,
5 lower clad layer, 6 active layer, 7 upper clad layer, 8a current injection layer, 16 first active layer, 17 first
Upper cladding layer, 18a: first current injection layer, 25: second
Lower cladding layer, 26: second active layer, 27: second upper cladding layer, 28a: second current injection layer, P: multilayer pattern, P1: first multilayer pattern, P2: second multilayer pattern

Claims (6)

[Claims] 1. A substrate made of a compound semiconductor having a surface inclined with respect to a crystal plane, a lower clad layer, an active layer, and an upper clad layer having a conductivity type different from that of the lower clad layer are sequentially laminated on the substrate. In a semiconductor light-emitting device comprising a multilayer film pattern and a single current injection layer provided on the multilayer film pattern, the surface of the substrate is obtained by etching and removing an epitaxial layer grown on the substrate. Processing region, and an initial surface region located on both sides of the processing region, wherein the multilayer film pattern has both ends in the extending direction of the current injection layer provided on the initial surface region, and a central portion. A semiconductor light emitting device provided on the processing region. 2. The semiconductor light emitting device according to claim 1, wherein said epitaxial layer is left on said substrate on both sides of said current injection layer. 3. The semiconductor light emitting device according to claim 2, wherein the epitaxial layer is a second lower cladding layer, and a second active layer having a composition different from that of the active layer and a conductive property different from that of the epitaxial layer. A second multilayer pattern in which a second upper clad layer of a mold is sequentially stacked; and a second current injection layer provided on the second multilayer pattern in parallel with the current injection layer. A semiconductor light emitting device characterized by the above-mentioned. 4. A mask pattern is formed on a surface of a substrate made of a compound semiconductor having a surface inclined with respect to a crystal plane, and an epitaxial layer is grown on an exposed surface of the substrate sandwiched between the mask patterns. Forming a processing region formed by etching away the epitaxial layer on the surface of the substrate by etching away the epitaxial layer; and removing both sides of the processing region by removing the mask pattern. Exposing an initial surface region of the substrate; forming a multilayer film in which a lower clad layer, an active layer and an upper clad layer of a conductivity type different from the lower clad layer are sequentially laminated on the substrate; On the film, extended to the initial surface area on both sides of the processing area in a state of crossing over the processing area The method of manufacturing a semiconductor light-emitting device, which comprises carrying out a step of forming a flow injection layer. 5. The method for manufacturing a semiconductor light emitting device according to claim 4, wherein the step of etching and removing the epitaxial layer comprises:
A method for manufacturing a semiconductor light emitting device, wherein the epitaxial layer is left on both sides of the current injection layer. 6. A step of forming a pair of mask patterns on a surface of a substrate made of a compound semiconductor having a surface inclined with respect to a crystal plane, and forming a first lower portion on the substrate on which the mask pattern is formed. Forming a first multilayer film in which an epitaxial layer serving as a cladding layer, a first active layer, and a first upper cladding layer having a conductivity type different from that of the epitaxial layer are sequentially laminated; and on the mask pattern and between the mask patterns Forming the first multilayer film pattern by etching away the first multilayer film, and forming a processing region formed by etching away the epitaxial layer on the surface of the substrate between the mask patterns; Exposing an initial surface area of the substrate on both sides of the processing area by removing a pattern; Forming a second multilayer film on the substrate, in which a second lower clad layer, a second active layer having a different composition from the first active layer, and a second upper clad layer having a conductivity type different from that of the second lower clad layer are stacked; Forming a second multilayer pattern by etching and removing the second multilayer film on the first multilayer pattern while leaving the second multilayer film on the initial surface region and the processing region. And on the first multilayer pattern and the second multilayer pattern,
Forming a current injection layer extending over the initial surface region on both sides of the processing region in a state of crossing the processing region.