JP2001235852A - Photomask, method for manufacturing semiconductor device and wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photomask which may be inspected weather the used photomask is wrong or not after development and a method for manufacturing a semiconductor using the same and a wafer. SOLUTION: This photomask includes actual element data regions 1 to 4 having the actual element patterns to be transferred to chip forming regions, a scribing data region 5 having patterns to be transferred to scribing line forming regions and identification patterns which are formed in this scribing data region 5 and identify the photomask. The check of the photomask to be used is executed by observing the identification patterns in the transferred resist patterns in the inspection after development.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask used in a photolithography process, a method for manufacturing a semiconductor device using the same, and a wafer.

[0002]

2. Description of the Related Art FIG. 2 is a plan view showing a conventional photomask.

[0005] The photomask 110 has a glass substrate 100 whose plane is substantially square. This glass substrate 1
The first to fourth real element data areas 101 to 1
04 are arranged in a grid pattern. In these real element data areas 101 to 104, real element patterns (not shown) are formed for transfer to areas on the wafer where chips are to be formed. First to fourth real element data areas 101 to 101
A scribe data area 105 is provided around each of the
Is arranged. In the scribe data area 105, a pattern to be transferred to an area where a scribe line is formed on the wafer is formed.

[0004] A mask ID recognition code (F0) for identifying a photomask name is provided in a portion other than the actual element data areas 101 to 104 and the scribe data area 105.
A + 3) 107 is described. The mask ID recognition code 107 is for distinguishing photomasks used in each process from each other, and is written to the extent that it is not transferred to a wafer and can be seen with the naked eye. At the time of exposure, an operator checks a photomask to be set in the exposure apparatus by using the mask ID recognition code 107.

Next, a method for manufacturing a semiconductor device using the photomask will be described.

First, after a resist film is applied on a wafer, the wafer is set in an exposure apparatus. Next, a photomask to be set in the exposure apparatus is prepared. At this time, the photomask is confirmed by the mask ID recognition code 107.

After that, the resist film is exposed using this photomask. Next, a resist pattern is formed on the wafer by developing the resist film. Thereafter, etching or the like is performed using the resist pattern as a mask.

[0008]

As described above, the confirmation of the photomask to be used in the photolithography step in the method of manufacturing a semiconductor device is performed by setting the photomask in the exposure apparatus before the alignment by the operator. Only the mask ID recognition code 107 is confirmed. For this reason, it is not possible to inspect after the development whether the used photomask is wrong. Therefore, if the operator mistakenly sets the photomask on the exposure apparatus, an error will be found at the stage of performing the probe test after the wafer process is completed. As a result, many wafers are all defective.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a photomask capable of inspecting, after development, whether or not a used photomask is erroneous, and a semiconductor using the same. An object of the present invention is to provide an apparatus manufacturing method and a wafer.

[0010]

According to the present invention, there is provided a photomask comprising: a real element data area having an actual element pattern transferred to a chip forming area; and a scribe data area having a pattern transferring to a scribe line forming area. And an identification pattern formed in the scribe data area for identifying a photomask.

According to the photomask, the photomask to be used in the photolithography process can be confirmed by observing the identification pattern in the transferred resist pattern in the inspection after development. For this reason, even if the operator sets the photomask in the exposure apparatus by mistake, the mistake can be found during the development inspection.

A photomask according to the present invention comprises: a real element data area having an actual element pattern transferred to a chip forming area; a scribe data area having a pattern transferred to a scribe line forming area; Or an identification pattern formed in the scribe data area for identifying a photomask.

A method of manufacturing a semiconductor device according to the present invention comprises the steps of applying a resist film on a wafer, exposing the resist film using a photomask, and developing the resist film to form a resist film on the wafer. Forming a resist pattern, and observing the following identification pattern in the resist pattern to confirm whether or not the used photomask is incorrect. The photomask includes an actual element data area having an actual element pattern transferred to a chip forming area, and a scribe data area having a pattern transferred to a scribe line forming area. An identification pattern for identifying a photomask is formed.

According to the method of manufacturing a semiconductor device, since the identification pattern for identifying the photomask is formed in the scribe data area of the photomask, the photomask to be used in the photolithography process is checked after development. The inspection can also be performed by observing the identification pattern transferred in the resist pattern. That is,
Even if the operator mistakenly sets the photomask on the exposure apparatus, the mistake can be found during the development inspection.

According to the present invention, there is provided a wafer on which an identification pattern for identifying a photomask is formed, wherein the photomask includes an actual element data area having an actual element pattern to be transferred to a chip forming area, and a scribe line. A scribe data area having a pattern to be transferred to the line forming area, and an identification pattern formed in the scribe data area and identifying a photomask, wherein the identification pattern is transferred using the photomask. Characterized in that the pattern is

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing a photomask according to an embodiment of the present invention.

The photomask 11 has a glass substrate 10 whose plane is substantially square. On the glass substrate 10, first to fourth real element data areas 1 to 4 are arranged in a lattice pattern. In these real element data areas 1 to 4,
An actual element pattern (not shown) for transfer to a region on the wafer where a chip is to be formed is formed. A scribe data area 5 is arranged around each of the first to fourth real element data areas 1 to 4. In the scribe data area 5, a pattern to be transferred to an area for forming a scribe line on the wafer is formed.

A mask ID recognition code (F0A + 3) 7 for identifying a photomask name is described in portions other than the actual element data areas 1 to 4 and the scribe data area 5. This mask ID recognition code 7 is for distinguishing the photomasks used in each process from each other, matches the mask code indicated on the flow sheet, is not transferred to the wafer, and is visually detected. It is described to the extent that it can be seen. During exposure, the worker
The photomask to be set in the exposure apparatus is confirmed by the mask ID recognition code 7.

In the scribe data area 5, an identification pattern (F0A + 3) 8 corresponding to a mask ID identification code 7 for identifying a photomask is formed.
The identification pattern 8 is coincident with the mask code indicated on the flow chart, and is used for inspecting, after development, whether or not the photomask used at the time of exposure is correct. The pattern is transferred as a pattern and cannot be seen with the naked eye, but is intended to be observed with a microscope during development inspection of the wafer.

Next, a method of manufacturing a semiconductor device using the photomask will be described.

First, after a resist film is applied on a wafer, the wafer is set in an exposure apparatus. Next, a photomask to be set in the exposure apparatus is prepared. At this time, the operator checks the photomask using the mask ID recognition code 7.

Thereafter, the resist film is exposed using this photomask. Next, a resist pattern is formed on the wafer by developing the resist film. Thereafter, a development inspection for observing the resist pattern with a microscope is performed. At this time, by observing the identification pattern 8 transferred in the resist pattern, it is confirmed whether or not the used photomask is incorrect.

Next, if the photomask is not wrong,
Etching is performed using this resist pattern as a mask. On the other hand, when the photomask is incorrect (that is, when exposure is performed using the wrong photomask)
Starts the above exposure and development steps again. That is, the wrong resist pattern is peeled off to form a correct resist pattern.

According to the above embodiment, the operator confirms the photomask to be used in the photolithography process when setting the mask ID in the exposure apparatus before the alignment.
Not only by confirming the recognition code 7 but also by inspecting the identification pattern 8 transferred in the resist pattern in the inspection after development. For this reason, even if the operator sets the photomask in the exposure apparatus by mistake, the mistake can be found during the development inspection. Therefore, it is possible to prevent an error from being found at the stage of performing a probe test after the wafer process is completed as in the related art. As a result, it is possible to prevent a large number of wafers from all becoming defective, and to reduce the manufacturing cost.

In this embodiment, the identification pattern 8
Is matched with the mask code indicated on the flow chart, so that the correctness of the photomask can be easily confirmed at the time of development inspection.

Further, in the present embodiment, it is possible to find out whether or not the operator has correctly set the photomask in the exposure apparatus during the development inspection, so that the failure analysis becomes easy, which is suitable for the production of a large variety of small semiconductor devices. .

The present invention is not limited to the above embodiment, but can be implemented with various modifications. For example,
The photomask according to the present embodiment may be used as a 1 / 5-fold reduction projection mask or a 1 / 1-fold projection mask.

In this embodiment, the identification pattern 8
Is formed in the scribe data area 5, but it is also possible to form the identification pattern in the first to fourth real element data areas 1 to 4.

[0030]

As described above, according to the present invention, there is provided a photomask which can be inspected after development to determine whether or not a used photomask is incorrect, a method of manufacturing a semiconductor device using the same, and a wafer. be able to.

[Brief description of the drawings]

FIG. 1 is a plan view showing a photomask according to an embodiment of the present invention.

FIG. 2 is a plan view showing a conventional photomask.

[Explanation of symbols]

 1 to 4 first to fourth real element data area 5 scribe data area 7 mask ID recognition code 8 identification pattern 10 glass substrate 11 photomask 100 glass substrate 101 to 104 first to fourth real element data area 105 scribe data Area 107 Mask ID recognition code 110 Photomask

Claims (4)

[Claims] 1. An actual element data area having an actual element pattern transferred to a chip forming area, a scribe data area having a pattern transferred to a scribe line forming area, and a photomask formed in the scribe data area A photomask, comprising: an identification pattern for identifying 2. An actual element data area having an actual element pattern transferred to a chip forming area, a scribe data area having a pattern transferred to a scribe line forming area, and a scribe data area having a pattern transferred to a scribe line forming area. And a formed identification pattern for identifying the photomask. A step of applying a resist film on the wafer; a step of exposing the resist film using a photomask; a step of forming a resist pattern on the wafer by developing the resist film; Observing the following identification pattern in the resist pattern to confirm whether or not the used photomask is incorrect. A method for manufacturing a semiconductor device comprising: An identification pattern for identifying a photomask is formed in the scribe data area, including an actual element data area having an actual element pattern transferred to a formation area, and a scribe data area having a pattern transferred to a scribe line formation area. A method of manufacturing a semiconductor device, comprising: 4. A wafer on which an identification pattern for identifying a photomask is formed, wherein the photomask is transferred to an actual element data area having an actual element pattern to be transferred to a chip formation area and to a scribe line formation area. A scribe data area having a pattern to be formed, and an identification pattern formed in the scribe data area for identifying a photomask, wherein the identification pattern is a pattern transferred using the photomask. A wafer characterized by the above-mentioned.